CN110581095B - Etching device and etching method - Google Patents
Etching device and etching method Download PDFInfo
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- CN110581095B CN110581095B CN201910924228.2A CN201910924228A CN110581095B CN 110581095 B CN110581095 B CN 110581095B CN 201910924228 A CN201910924228 A CN 201910924228A CN 110581095 B CN110581095 B CN 110581095B
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Abstract
The invention discloses an etching device, comprising: the device comprises an oxidation modification unit, an etching unit, a cleaning unit, a transmission unit and a control unit; wherein the oxidation modification unit comprises: the device comprises a first chamber, a first monitoring assembly arranged in the first chamber and a first supply assembly monitored by the first monitoring assembly, wherein the first supply assembly is communicated with the first chamber; the oxidation modification unit is used for carrying out oxidation treatment on the wafer; the transfer unit is used for transferring the wafer among the first chamber, the second chamber and the third chamber; the control unit is respectively connected with the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit and is used for controlling the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly and controlling the transmission unit to transfer the wafer. The etching device can carry out various digital wet etching in batches and carry out high-selectivity fine etching on different materials. Meanwhile, the invention also provides an etching method.
Description
Technical Field
The invention relates to the field of atomic layer etching, in particular to an etching device and an etching method.
Background
Atomic Layer Etching (ALE) is a technique that enables precise control of the amount of material removed. Specifically, atomic layer etching is mainly divided into two steps: modifying and removing, namely modifying the surface layer in the first step to enable the surface layer to be easily removed in the second step; each cycle removes only a thin layer of material and the cycle can be repeated until the desired depth is reached. It is considered to be one of the most promising technologies to achieve the low process variation required at the atomic-scale era.
However, ALE technology is still immature and its development still presents difficulties and challenges, mainly manifested in several areas: one, lack of solution for ALE etching new materials; particularly germanium, silicon germanium, III-V materials, and new metal gate materials, requiring different ALE etch schemes for different materials; secondly, new three-dimensional device structures require more ALE technologies, especially lateral etch schemes and better etch selectivity; and thirdly, because the reaction process needs a plurality of cycles and the switching among the steps is slow, the application efficiency of the atomic layer etching in the batch production is low and the cost is high.
Disclosure of Invention
The invention provides an etching device and an etching method, aiming at overcoming the technical problems that the existing etching device and the existing etching method can not etch wafers with different materials and structures, the etching process period is long, and the switching among steps is slow.
The etching device of the invention comprises: the device comprises an oxidation modification unit, an etching unit, a cleaning unit, a transmission unit and a control unit;
wherein the oxidation modification unit comprises: the device comprises a first chamber, a first monitoring assembly arranged in the first chamber and a first supply assembly monitored by the first monitoring assembly, wherein the first supply assembly is communicated with the first chamber; the oxidation modification unit is used for carrying out oxidation treatment on the wafer;
the etching unit includes: the second feeding assembly is communicated with the second chamber; the etching device is used for etching the wafer oxidized by the oxidation modification unit;
the cleaning unit includes: the third chamber, a third monitoring unit arranged in the third chamber and a third supply assembly monitored by the third monitoring unit, wherein the third supply assembly is communicated with the third chamber; the wafer cleaning device is used for cleaning the wafer before the oxidation modification unit and/or the etching unit;
the transfer unit is used for transferring the wafer among the first chamber, the second chamber and the third chamber;
the control unit is respectively connected with the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit and is used for controlling the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly and controlling the transmission unit to transfer the wafer.
Preferably, the cleaning unit further comprises a rotating assembly including a rotating disk, a connecting rod having one end connected to the bottom of the rotating disk, and a rotating motor connected to the other end of the connecting rod, for spin-drying the wafer after the cleaning process.
Preferably, the first supply assembly comprises an oxidizing liquid storage tank and a first pump communicated with an outlet of the oxidizing liquid storage tank; the outlet of the first pump is communicated with the inlet of the first chamber and is used for adding the oxidizing liquid into the first chamber.
Preferably, the first monitoring assembly comprises: a first liquid level monitor, a first concentration monitor, and a first temperature monitor,
the first liquid level monitoring control is arranged at the upper part of the first chamber and is connected with the first pump; the volume of the oxidizing liquid in the first cavity is monitored and regulated;
the first concentration monitoring control is arranged in the first chamber and is connected with the first pump; the concentration of the oxidizing liquid in the first cavity is monitored and regulated;
the first temperature monitoring part comprises a first temperature detection part and a first temperature adjusting and controlling part connected with the first temperature detection part, and the first temperature detection part is arranged in the first chamber; for monitoring and controlling the temperature of the oxidizing liquid in the first chamber.
Preferably, the first monitoring unit further comprises a thickness detection piece, and the thickness detection piece is connected with the control unit and used for detecting the thickness of the film layer on the wafer on line and sending thickness information to the control unit.
Preferably, the oxidation modification unit further comprises a first ultrasonic vibration member, and the first ultrasonic vibration member is arranged at the bottom of the first chamber and is used for stirring the oxidation liquid.
Preferably, a first valve is disposed between the first pump and the first chamber.
Preferably, the third supply assembly comprises: a cleaning liquid storage tank, an impurity removing part and a second pump,
wherein the cleaning liquid storage tank is communicated with the inlet of the third chamber and is used for adding cleaning liquid into the third chamber;
a filter sieve and a purifying agent are contained in the impurity removing part, and an inlet of the impurity removing part is communicated with an outlet of the third chamber and is used for filtering and purifying the cleaning liquid in the third chamber;
the inlet of the second pump is in communication with the outlet of the impurity removing member and the inlet of the second pump is in communication with the inlet of the third chamber for circulating the cleaning liquid in the third chamber and the impurity removing member.
Preferably, the third monitoring unit includes: a second liquid level monitoring part and a second concentration monitoring part,
the second liquid level monitoring part is arranged at the upper part of the third chamber and is connected with the cleaning liquid storage tank; for monitoring and controlling the volume of cleaning solution in the third chamber;
the second concentration monitoring part is arranged in the third chamber and is connected with the second pump; for monitoring and controlling the concentration of the cleaning solution in the third chamber.
Preferably, the second supply assembly comprises: the outlet of the third pump is communicated with the inlet of the second cavity; used for adding etching liquid into the second chamber.
Preferably, the second monitoring assembly comprises: a third liquid level monitor, a third concentration monitor, and a second temperature monitor,
the third liquid level monitoring control is arranged at the upper part of the second chamber and is connected with the third pump; the volume of the etching liquid in the second chamber is monitored and regulated;
the third concentration monitoring control is arranged in the second chamber and is connected with the third pump; the concentration of the etching liquid in the second chamber is monitored and regulated;
the second temperature monitoring and controlling part comprises a second temperature detecting part and a second temperature adjusting and controlling part connected with the second temperature detecting part, and the second temperature detecting part is arranged in the second chamber; and is used for monitoring and controlling the temperature of the etching liquid in the second chamber.
Preferably, the etching unit further comprises a second ultrasonic vibration member, and the second ultrasonic vibration member is arranged at the bottom of the second chamber and used for stirring the etching liquid.
Preferably, the control unit includes: the device comprises an input component, a timing component and a regulation and control component;
the input assembly is used for acquiring and sending working parameters; wherein the working parameters comprise working time, cycle times, solution concentration, solution volume and solution temperature;
the timing assembly is connected with the regulation and control assembly and is used for timing oxidation treatment, cleaning treatment and etching treatment and sending timing information;
the regulation and control assembly is respectively connected with the input assembly, the regulation and control assembly, the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit, receives and controls the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly according to working parameters and timing information, and controls the transmission unit to transfer the wafer.
Meanwhile, the invention also provides an etching method, which comprises the following steps:
setting working parameters, wherein the working parameters comprise oxidation parameters, cleaning parameters, etching parameters and operation times;
according to the oxidation parameters, carrying out oxidation treatment on the wafer in the first chamber, and according to the cleaning parameters, carrying out cleaning treatment on the oxidized wafer in the third chamber;
etching the wafer in the second chamber according to the etching parameters, and cleaning the etched wafer in the third chamber according to the cleaning parameters;
and sequentially circulating the processing steps until the circulation times are equal to the operation times.
Preferably, the operating parameters further comprise drying parameters, the drying parameters comprising rotation speed and rotation time.
Preferably, after each cleaning process, and before the oxidation process or the etching process, the wafer is subjected to a drying process in the third chamber according to the drying parameters.
Preferably, the oxidation parameters include oxidation reaction time, oxidation liquid volume, oxidation liquid concentration, and oxidation liquid temperature.
Preferably, the cleaning parameters include cleaning liquid volume and cleaning liquid concentration.
Preferably, the etching parameters include etching reaction time, etching liquid volume, etching liquid concentration, and etching liquid temperature.
In summary, the etching apparatus provided by the present invention is provided with a processing unit with three functions of oxidation, etching and cleaning; before the wafer is etched, the wafer or other samples can be pretreated by BOE (wet etching) and the like according to working requirements, the wafer is oxidized after the pretreatment, namely, an area needing etching is modified, the wafer after the oxidation treatment is cleaned in a cleaning unit so as to remove oxidizing liquid remained on the wafer during the oxidation treatment, the influence on the later etching effect is avoided, the cleaned wafer reacts with the etching liquid in the etching unit, the area on the surface of the wafer, which is subjected to the oxidation reaction, can be removed for realizing the etching, the operation is circulated until the working requirements are met, and the wafer is etched.
Before etching, the pretreated wafer is oxidized and cleaned, only the area which is pretreated and oxidized is etched, meanwhile, different materials can be oxidized to different degrees, the high selectivity of the etching device to different materials can be realized, the etching device can etch the wafer which is prepared by different materials in a high selectivity way, the application range of the etching device is improved, and meanwhile, the etching device can be used for batch isotropic etching; in addition, the device can monitor the concentration, volume and other information of the solution in the three units of oxidation, etching and cleaning in situ in real time, and improves the automation and etching efficiency of the etching process.
Drawings
FIG. 1 is a block diagram of the overall structure of an etching apparatus according to the present invention;
FIG. 2 is a flow chart of an etching method according to the present invention.
Wherein, 1 is an oxidation modification unit, 2 is an etching unit, 3 is a cleaning unit, 4 is a transmission unit, and 5 is a control unit.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Atomic Layer Etching (ALE) is a technique that enables precise control of the amount of material removed and is considered one of the most promising techniques for achieving the low process variation required in atomic-scale era; with the development of transistor technology, people also put higher demands on atomic layer etching technology
However, ALE technology is still immature and its development remains difficult and challenging, mainly as shown in: there is no good lateral etching or isotropic etching scheme; lack of solutions for ALE etching new materials, i.e. different ALE etching solutions are required for different materials; new three-dimensional device structures require more ALE technology; and the application efficiency of the atomic layer etching in the batch production is low, and the cost is high.
Aiming at the technical problems, the invention provides an etching device and an etching method, BOE pretreatment is carried out on wafers according to working requirements, oxidation, cleaning, etching and cleaning treatment are carried out on the wafers in sequence after the pretreatment, the etching work on the wafers with different materials and structures can be completed by circulating the above operations, meanwhile, the device can monitor the information of solution concentration, solution volume and the like in three units of oxidation, etching and cleaning in situ in real time, the automation of the etching process is improved, the slow switching among the steps is avoided, and the etching working efficiency is improved.
Specifically, the etching apparatus of the present invention includes: the device comprises an oxidation modification unit 1, an etching unit 2, a cleaning unit 3, a transmission unit 4 and a control unit 5;
wherein, the oxidation modification unit 1 comprises: the device comprises a first chamber, a first monitoring assembly arranged in the first chamber and a first supply assembly monitored by the first monitoring assembly, wherein the first supply assembly is communicated with the first chamber; the oxidation modification unit 1 is used for carrying out oxidation treatment on the wafer;
the etching unit 2 includes: the second feeding assembly is communicated with the second chamber; the etching unit is used for etching the wafer oxidized by the oxidation modification unit 1;
the cleaning unit 3 includes: the third chamber, a third monitoring unit arranged in the third chamber and a third supply assembly monitored by the third monitoring unit, wherein the third supply assembly is communicated with the third chamber; for cleaning the wafer before the oxidation modification unit 1 and/or the etching unit 2;
the transfer unit 4 is used for transferring the wafer among the first chamber, the second chamber and the third chamber;
the control unit 5 is respectively connected with the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit 4, and is used for controlling the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly and controlling the transmission unit 4 to transfer the wafer.
In this embodiment, when the wafer is subjected to oxidation treatment in the first chamber or etching treatment in the second chamber, the oxidation/etching thickness needs to be accurately controlled, that is, the concentration, volume and temperature of the oxidation/etching reaction solution need to be ensured within a range meeting the working requirement, and meanwhile, the wafer is subjected to cleaning treatment in the third chamber, that is, the oxidizing solution remaining on the wafer needs to be removed, that is, the concentration of the oxidizing substance in the cleaning solution after cleaning needs to be ensured within a range meeting the working requirement; the first monitoring component, the second monitoring component and the third monitoring component respectively monitor the information of solution concentration, solution volume and the like in the corresponding chambers, and regulate and control the processing conditions within the range meeting the working requirements according to the indication of the control unit 5, so that the etching work is smoothly carried out.
In this embodiment, the transmission unit 4 includes a robot arm and a quartz boat for carrying wafers; before the wafer is required to be transferred among the first chamber, the second chamber and the third chamber, the wafer is required to be placed on a quartz boat, then a mechanical arm performs corresponding stretching and lifting movement according to the position relation of the first chamber, the second chamber and the third chamber so as to carry the quartz boat to move, and finally the wafer is placed in a corresponding chamber according to a processing procedure; of course, it is conceivable that the transmission unit 4 may also be any component that meets the requirements.
By adopting the technical scheme, before etching, the pretreated wafer is oxidized and cleaned, and the oxidation modification unit 1 can accurately control the oxidation thickness or make the oxidation thickness reach the self-limiting thickness; the etching device has the advantages that only the area subjected to pretreatment and oxidation treatment is etched, meanwhile, different materials can be oxidized in different degrees, high selectivity of the etching device to different materials can be realized, the etching device can etch wafers prepared from different materials in a high selectivity mode, the application range of the etching device is improved, meanwhile, the wafers after pretreatment only need to react with a solution or be cleaned by the solution in a corresponding cavity, and the etching device can be used for batch isotropic etching; in addition, the device can monitor the concentration, volume and other information of the solution in the three units of oxidation, etching and cleaning in situ in real time, and improves the automation and etching efficiency of the etching process.
On the basis of the above embodiment, further, the cleaning unit 3 further comprises a rotating assembly, the rotating assembly comprises a rotating disk, a connecting rod with one end connected with the bottom of the rotating disk, and a rotating motor connected with the other end of the connecting rod, and the rotating assembly is used for spin-drying the wafer after the cleaning process.
On the basis of the above embodiment, further, the side wall of the third chamber is further provided with an air inlet, after the cleaning treatment is finished, the air inlet is opened, and N is blown into the third chamber through the air inlet2I.e. blowing N to the cleaned wafer2The drying of the wafer is realized; of course, it is conceivable to use other than N2And any inert gas with stable properties and difficult occurrence can be used.
By adopting the technical scheme, after cleaning treatment, the cleaned wafer is dried through the rotation of the rotating assembly, and N is blown to the wafer while the wafer is rotated2Further drying the wafer to avoid the waferResidual redundant substances exist on the surface of the substrate, so that the etching effect is influenced when the subsequent etching treatment is carried out.
On the basis of the embodiment, the first supply assembly further comprises an oxidizing liquid storage tank and a first pump communicated with an outlet of the oxidizing liquid storage tank; the outlet of the first pump is communicated with the inlet of the first chamber and is used for adding the oxidizing liquid into the first chamber.
In this embodiment, the oxidizing solution may be H2O2Or, any other oxide that meets the operational requirements.
In other optional embodiments, besides adding the oxidizing liquid into the first chamber to perform the oxidation reaction, an oxidizing gas may be filled into the first chamber, and the specific type of the oxidizing liquid or the oxidizing gas may be selected according to actual conditions.
On the basis of the above embodiment, further, the first monitoring component includes: the device comprises a first liquid level monitoring and controlling part, a first concentration monitoring and controlling part and a first temperature monitoring and controlling part;
the first liquid level monitoring control is arranged at the upper part of the first chamber and is connected with the first pump; the volume of the oxidizing liquid in the first cavity is monitored and regulated;
the first concentration monitoring control is arranged in the first chamber and is connected with the first pump; the concentration of the oxidizing liquid in the first cavity is monitored and regulated;
the first temperature monitoring part comprises a first temperature detection part and a first temperature adjusting and controlling part connected with the first temperature detection part, and the first temperature detection part is arranged in the first chamber; for monitoring and controlling the temperature of the oxidizing liquid in the first chamber.
In this embodiment, the first liquid level monitoring element is used for monitoring and controlling the volume of the oxidizing liquid in the first chamber; specifically, when the wafer is conveyed into the first chamber and oxidation treatment is required, the first liquid level monitoring control starts the first pump to operate according to the range value of the volume of the oxidation liquid sent by the control unit 5, and the oxidation liquid is added into the first chamber until the operating requirement is met.
The first concentration monitoring part monitors and regulates the concentration of the oxidizing liquid in the first cavity, the working mode is similar to that of the first liquid level monitoring part, when the wafer is subjected to oxidation treatment in the first cavity, the first concentration monitoring part monitors the concentration of the oxidizing liquid in real time, and when the concentration is lower than the working requirement range, the first pump is started to add the oxidizing liquid into the first cavity so as to improve the concentration of the oxidizing liquid.
First temperature detection spare real-time supervision oxidation treatment in-process oxidizing liquid temperature to send temperature information to first temperature regulation and control spare, when the not scope value in the working requirement of oxidizing liquid temperature, first temperature regulation and control spare can heat or cool down oxidizing liquid, in order to ensure that oxidizing liquid temperature is invariable.
On the basis of the above embodiment, further, the first monitoring unit further includes a thickness detection component, and the thickness detection component is connected to the control unit 5, and is used for detecting the thickness of the film layer on the wafer on line and sending thickness information to the control unit 5.
In the embodiment, in the working process, the thickness detection piece detects the thickness of the film layer on the wafer in real time and sends thickness information to the control unit 5, and the control unit 5 adjusts the subsequent process according to the thickness information; the thickness detection piece can be an ellipsometer or any other existing component meeting the working requirement.
On the basis of the above embodiment, the oxidation modification unit 1 further includes a first ultrasonic vibration member, and the first ultrasonic vibration member is disposed at the bottom of the first chamber and is used for stirring the oxidation liquid.
By adopting the technical scheme, the first ultrasonic vibration piece is arranged at the bottom of the first chamber, so that the oxidation liquid can be subjected to ultrasonic vibration in the oxidation treatment of the wafer, namely, the oxidation liquid is stirred, the concentration of the oxidation liquid near the region, which needs to be subjected to the oxidation treatment, of the wafer cannot be reduced due to oxidation reaction, the concentration of the oxidation liquid near the region, which is subjected to the oxidation treatment, of the wafer is ensured to be constant, the oxidation treatment speed is increased, and the etching period is shortened.
On the basis of the above embodiment, further, a first valve is disposed between the first pump and the first chamber.
By adopting the technical scheme, the first valve is arranged between the first pump and the first chamber, and when the oxidizing liquid is not required to be added into the first chamber, the first valve can be closed, so that the overall controllability of the device is further improved.
On the basis of the above embodiment, further, the third supply unit includes: a cleaning liquid storage tank, an impurity removing part and a second pump,
wherein the cleaning liquid storage tank is communicated with the inlet of the third chamber and is used for adding cleaning liquid into the third chamber;
a filter screen and a purifying agent are contained in the impurity removing part, and an inlet of the impurity removing part is communicated with an outlet of the third chamber and is used for filtering and purifying the cleaning liquid in the third chamber;
the inlet of the second pump is in communication with the outlet of the impurity removing member and the inlet of the second pump is in communication with the inlet of the third chamber for circulating the cleaning liquid in the third chamber and the impurity removing member.
In the embodiment, the cleaning solution storage tank is used for adding the cleaning solution into the third chamber, when the volume of the cleaning solution in the third chamber meets the range value of the working requirement, the addition is stopped, the impurity removing part and the second pump are sequentially communicated between the outlet and the inlet of the third chamber, in the cleaning process, the second pump is used for circulating the cleaning solution in the third chamber and the impurity removing part, in the circulating process, the impurity removing part filters impurities in the cleaning solution, and the cleaning agent is added according to side-effect substances generated by reaction of the wafer in the first chamber and the second chamber, so that the wafer is cleaned; wherein the purifying agent can be reducing agent or other agent capable of removing side effect substances.
On the basis of the above embodiment, further, the third monitoring unit includes: a second liquid level monitoring part and a second concentration monitoring part,
the second liquid level monitoring part is arranged at the upper part of the third chamber and is connected with the cleaning liquid storage tank; for monitoring and controlling the volume of cleaning solution in the third chamber;
the second concentration monitoring part is arranged in the third chamber and is connected with the second pump; for monitoring and controlling the concentration of the cleaning solution in the third chamber.
In this embodiment, the second concentration monitoring part monitors the concentration of the oxidizing substance in the cleaning solution flowing out from the outlet of the third chamber in real time, and according to the working range value sent by the control unit 5, when the concentration of the oxidizing substance is not in the working range value, the second pump is started, so that the cleaning solution is circulated in the third chamber and the impurity removing part, the impurity removing part reduces the oxidizing substance in the cleaning solution, until the working requirement is met, namely, the wafer is cleaned.
On the basis of the above embodiment, further, the second supply unit includes: the outlet of the third pump is communicated with the inlet of the second cavity; used for adding etching liquid into the second chamber.
In this embodiment, the etching solution may be any one of hydrofluoric acid, acetic acid, BOE (buffered oxide etching solution), TMAH (tetramethylammonium hydroxide), and the like that satisfies the working requirement.
On the basis of the above embodiment, a second valve is further arranged between the inlet of the etching liquid storage tank and the outlet of the third pump.
On the basis of the above embodiment, further, the second monitoring component includes: a third liquid level monitor, a third concentration monitor, and a second temperature monitor,
the third liquid level monitoring control is arranged at the upper part of the second chamber and is connected with the third pump; the volume of the etching liquid in the second chamber is monitored and regulated;
the third concentration monitoring control is arranged in the second chamber and is connected with the third pump; the concentration of the etching liquid in the second chamber is monitored and regulated;
the second temperature monitoring and controlling part comprises a second temperature detecting part and a second temperature adjusting and controlling part connected with the second temperature detecting part, and the second temperature detecting part is arranged in the second chamber; and is used for monitoring and controlling the temperature of the etching liquid in the second chamber.
It should be noted that the second monitoring component and the first monitoring component work in the same manner, but the specific working parameters and working positions are different, and are not described herein again.
The first liquid level monitoring control, the second liquid level monitoring control and the third liquid level monitoring control can be liquid level sensors, liquid level detection switches or liquid level meters and the like; the first concentration monitoring part, the second concentration monitoring part and the third concentration monitoring part can be concentration detectors; the first temperature detection piece and the second temperature detection piece can be temperature sensors; of course, the above-mentioned components may be any existing components that meet the operational requirements.
On the basis of the above embodiment, the etching unit 2 further includes a second ultrasonic vibration member, and the second ultrasonic vibration member is disposed at the bottom of the second chamber and is used for stirring the etching solution.
By adopting the technical scheme, the second ultrasonic vibration part is arranged at the bottom of the second chamber, so that the etching liquid can be ultrasonically vibrated, namely the etching liquid is stirred, the concentration of the etching liquid near the area, which needs to be etched, of the wafer is not reduced due to etching reaction, the concentration of the etching liquid near the area, which needs to be etched, of the wafer is ensured to be constant, the etching processing speed is improved, and the etching period is shortened.
On the basis of the above embodiment, further, the control unit 5 includes: the device comprises an input component, a timing component and a regulation and control component;
the input assembly is used for acquiring and sending working parameters; wherein the working parameters comprise working time, cycle times, solution concentration, solution volume and solution temperature;
the timing assembly is connected with the regulation and control assembly and is used for timing oxidation treatment, cleaning treatment and etching treatment and sending timing information;
the regulation and control assembly is respectively connected with the input assembly, the regulation and control assembly, the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit 4, receives and controls the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly according to working parameters and timing information, and controls the transmission unit 4 to transfer the wafer.
In this embodiment, operating personnel passes through input module input working parameter according to operating condition, start the etching device, the input module sends the working parameter who gathers for the regulation and control subassembly, regulation and control subassembly control transmission unit 4 shifts the wafer to oxidation modification unit 1 and carries out oxidation treatment, in the course of the treatment, the timing subassembly is to oxidation treatment timing, and send timing information for the regulation and control unit in real time, the regulation and control unit is according to operating duration, control transmission unit 4 shifts the wafer to corresponding cleaning unit 3, etching unit 2 is handled, until the number of times of operation of actual work equals the circulation and handles, etching process automation has been realized, shorten step switching time.
It should be noted that the input assembly, timing assembly and control assembly can be any existing component that meets the operational requirements, such as: the input component can be a computer, the timing component can be a timer, and the regulation component can be a PLC.
Meanwhile, the invention also provides an etching method, which comprises the following steps:
s1, setting working parameters, wherein the working parameters comprise oxidation parameters, cleaning parameters, etching parameters and operation times;
wherein, the oxidation parameters comprise oxidation reaction time, volume of the oxidation liquid, concentration of the oxidation liquid and temperature of the oxidation liquid; the cleaning parameters include cleaning liquid volume and cleaning liquid concentration; the etching parameters include etching reaction time, volume of etching solution, concentration of etching solution, and temperature of etching solution.
Further, the working parameters also comprise drying parameters, and the drying parameters comprise rotating speed and rotating time; preferably, the drying parameters further include an intake air flow rate and an intake time.
S2, carrying out oxidation treatment on the wafer in the first chamber according to the oxidation parameters, and carrying out cleaning treatment on the oxidized wafer in the third chamber according to the cleaning parameters;
specifically, the oxidation treatment comprises the steps of:
s211, after the oxidation treatment is started, the first monitoring component receives oxidation parameters;
s212, the first liquid level monitoring control monitors the volume of the oxidizing liquid in the first cavity in real time according to the volume information of the oxidizing liquid, the first pump is started, and the oxidizing liquid is added into the first cavity until the volume of the oxidizing liquid meets the range value of the working requirement;
the first concentration monitoring part monitors the concentration of the oxidizing liquid in the first chamber in real time according to the concentration information of the oxidizing liquid, and if the concentration does not meet the range value of the working requirement, the first pump is started to add the oxidizing liquid into the first chamber;
the first temperature detection part monitors the temperature of the oxidizing liquid in the oxidation treatment process in real time and sends real-time temperature information to the first temperature regulation part, and the first temperature regulation part heats or cools the oxidizing liquid of which the temperature is not within the working requirement range according to the real-time temperature information and the temperature information of the oxidizing liquid.
Before the first oxidation treatment is performed on the wafer, the BOE treatment needs to be performed on the wafer according to specific actual conditions.
Further, the cleaning process comprises the steps of:
s221, after the cleaning process is started, the third monitoring assembly receives cleaning parameters:
s222, the second liquid level monitoring control monitors the volume of the cleaning liquid in the third chamber in real time according to the volume information of the cleaning liquid, a second pump is started, and the cleaning liquid is added into the third chamber until the volume of the cleaning liquid meets the working requirement range value;
the second concentration monitoring part monitors the concentration of the oxidizing liquid in the third chamber in real time according to the concentration information of the oxidizing liquid, and if the concentration of the oxidizing liquid does not meet the range value of the working requirement, the second pump is started to add the oxidizing liquid into the third chamber;
s3, etching the wafer in the second chamber according to the etching parameters, and cleaning the etched wafer in the third chamber according to the cleaning parameters;
in this embodiment, the operation mode of the etching process is similar to that of the oxidation process, but the specific parameters and the working positions are different, and therefore, the description thereof is omitted here.
Further, after each cleaning process and before the oxidation process or the etching process, the wafer is subjected to a drying process in the third chamber according to the drying parameters.
And S4, sequentially circulating the processing steps until the circulation number is equal to the operation number.
In summary, the etching apparatus provided by the present invention is provided with a processing unit with three functions of oxidation, etching and cleaning; before the wafer is etched, the wafer or other samples can be subjected to BOE (biaxially oriented etching) and other pretreatments according to working requirements, the wafer is subjected to oxidation treatment after the pretreatment, namely, an area needing etching is modified, the wafer after the oxidation treatment is cleaned in the cleaning unit 3 so as to remove oxidation liquid remained on the wafer during the oxidation treatment, the influence on the later-stage etching effect is avoided, the cleaned wafer reacts with the etching liquid in the etching unit 2, the area on the surface of the wafer, which is subjected to the oxidation reaction, can be removed to realize etching, the operation is circulated until the working requirements are met, and the wafer is etched.
Before etching, the pretreated wafer is oxidized and cleaned, only the area which is pretreated and oxidized is etched, meanwhile, different materials can be oxidized to different degrees, the high selectivity of the etching device to different materials can be realized, the etching device can etch the wafer which is prepared by different materials in a high selectivity way, the application range of the etching device is improved, and meanwhile, the etching device can be used for batch isotropic etching; in addition, the device can monitor the concentration, volume and other information of the solution in the three units of oxidation, etching and cleaning in situ in real time, and improves the automation and etching efficiency of the etching process.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention and do not limit the spirit and scope of the present invention. Various modifications and improvements of the technical solutions of the present invention may be made by those skilled in the art without departing from the design concept of the present invention, and the technical contents of the present invention are all described in the claims.
Claims (18)
1. An etching apparatus, comprising:
an oxidative modification unit comprising: the device comprises a first chamber, a first monitoring assembly arranged in the first chamber, and a first supply assembly monitored by the first monitoring assembly, wherein the first supply assembly is communicated with the first chamber; the oxidation modification unit is used for carrying out oxidation treatment on the wafer;
an etching unit, the etching unit comprising: the second feeding assembly is communicated with the second chamber; the wafer is used for etching the wafer oxidized by the oxidation modification unit;
a cleaning unit comprising: the third chamber, set up the third control unit in the said third chamber, and carry on the third supply assembly monitored by the said third control unit, the third supply assembly communicates with said third chamber; the wafer cleaning device is used for cleaning the wafer before being processed by the oxidation modification unit and/or the etching unit;
a transfer unit for transferring the wafer among the first chamber, the second chamber, and the third chamber;
the control unit is respectively connected with the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit and is used for controlling the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly and controlling the transmission unit to transfer the wafer;
wherein the third supply assembly comprises: a cleaning liquid storage tank in communication with the inlet of the third chamber for adding cleaning liquid into the third chamber;
the impurity removing part is internally provided with a filter screen and a purifying agent, and an inlet of the impurity removing part is communicated with an outlet of the third chamber and is used for filtering and purifying the cleaning liquid in the third chamber;
a second pump, the inlet of the second pump with the outlet intercommunication of impurity removal piece, the inlet of second pump with the inlet intercommunication of third chamber for circulate the cleaning solution in third chamber and impurity removal piece.
2. The etching apparatus according to claim 1, wherein the cleaning unit further comprises a rotating assembly including a rotating disk, a connecting rod having one end connected to a bottom of the rotating disk, and a rotating motor connected to the other end of the connecting rod, for spin-drying the wafer after the cleaning process.
3. The etching apparatus according to claim 2, wherein the first supply assembly includes an oxidizing liquid storage tank, and a first pump communicating with an outlet of the oxidizing liquid storage tank; and the outlet of the first pump is communicated with the inlet of the first chamber and is used for adding oxidizing liquid into the first chamber.
4. The etching apparatus of claim 3, wherein the first monitoring assembly comprises:
the first liquid level monitoring control is arranged at the upper part of the first chamber and is connected with the first pump; for monitoring and regulating the volume of oxidizing liquid in the first chamber;
the first concentration monitoring control is arranged in the first chamber and is connected with the first pump; the concentration of the oxidizing liquid in the first chamber is monitored and regulated;
the first temperature monitoring part comprises a first temperature detection part and a first temperature adjusting part connected with the first temperature detection part, and the first temperature detection part is arranged in the first chamber; for monitoring and controlling the temperature of the oxidizing liquid in the first chamber.
5. The etching apparatus according to claim 3, wherein the first monitoring unit further comprises a thickness detection member, and the thickness detection member is connected to the control unit and is configured to detect the thickness of the film layer on the wafer on line and send thickness information to the control unit.
6. The etching apparatus according to claim 2, wherein the oxidation modification unit further comprises a first ultrasonic vibration member disposed at the bottom of the first chamber for stirring the oxidizing liquid.
7. Etching apparatus according to claim 3, wherein a first valve is provided between the first pump and the first chamber.
8. The etching apparatus according to claim 1, wherein the third monitoring unit comprises:
the second liquid level monitoring part is arranged at the upper part of the third chamber and is connected with the cleaning liquid storage tank; for monitoring and regulating the volume of cleaning fluid within the third chamber;
the second concentration monitoring part is arranged in the third chamber and is connected with the second pump; for monitoring and controlling the concentration of cleaning fluid in the third chamber.
9. The etching apparatus of claim 2, wherein the second supply assembly comprises: the outlet of the third pump is communicated with the inlet of the second cavity; and the etching liquid is added into the second chamber.
10. The etching apparatus of claim 9, wherein the second monitoring assembly comprises:
the third liquid level monitoring control is arranged at the upper part of the second chamber and is connected with the third pump; the volume of the etching liquid in the second chamber is monitored and regulated;
a third concentration monitoring control arranged inside the second chamber and connected with the third pump; the concentration of the etching liquid in the second chamber is monitored and regulated;
the second temperature monitoring and controlling part comprises a second temperature detecting part and a second temperature adjusting and controlling part connected with the second temperature detecting part, and the second temperature detecting part is arranged in the second chamber; and the temperature of the etching liquid in the second chamber is monitored and regulated.
11. The etching apparatus according to claim 9, wherein the etching unit further comprises a second ultrasonic vibration member, and the second ultrasonic vibration member is disposed at the bottom of the second chamber and is used for stirring the etching solution.
12. The etching apparatus according to claim 1, wherein the control unit comprises: the device comprises an input component, a timing component and a regulation and control component;
the input assembly is used for acquiring and sending working parameters; wherein the working parameters comprise working time, cycle times, solution concentration, solution volume and solution temperature;
the timing assembly is connected with the regulation and control assembly and is used for timing oxidation treatment, cleaning treatment and etching treatment and sending timing information;
the control assembly is respectively connected with the input assembly, the control assembly, the first monitoring assembly, the second monitoring assembly, the third monitoring assembly and the transmission unit, receives and controls the working states of the first monitoring assembly, the second monitoring assembly and the third monitoring assembly according to the working parameters and the timing information, and controls the transmission unit to transfer the wafer.
13. An etching method using the etching apparatus according to any one of claims 1 to 12, characterized by comprising the steps of:
setting working parameters, wherein the working parameters comprise oxidation parameters, cleaning parameters, etching parameters and operation times;
according to the oxidation parameters, carrying out oxidation treatment on the wafer in the first chamber, and according to the cleaning parameters, carrying out cleaning treatment on the oxidized wafer in the third chamber;
etching the wafer in the second chamber according to the etching parameters, and cleaning the etched wafer in the third chamber according to the cleaning parameters;
and sequentially circulating the processing steps until the circulation times are equal to the operation times.
14. The etching method of claim 13, wherein the operating parameters further comprise drying parameters, the drying parameters comprising spin speed and spin time.
15. The etching method according to claim 14, wherein the wafer is dried in the third chamber after each cleaning process and before the oxidation process or the etching process according to the drying parameter.
16. The etching method according to claim 15, wherein the oxidation parameters include oxidation reaction time, volume of the oxidizing liquid, concentration of the oxidizing liquid, and temperature of the oxidizing liquid.
17. The etching method according to claim 15, wherein the cleaning parameters include a cleaning liquid volume and a cleaning liquid concentration.
18. The etching method according to claim 15, wherein the etching parameters include etching reaction time, etching liquid volume, etching liquid concentration, and etching liquid temperature.
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| CN102354663A (en) * | 2011-11-08 | 2012-02-15 | 浚鑫科技股份有限公司 | Method for etching silicon chip |
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| US5914280A (en) * | 1996-12-23 | 1999-06-22 | Harris Corporation | Deep trench etch on bonded silicon wafer |
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