TW201134928A - Polishing agent for polishing copper and polishing method using the same - Google Patents

Polishing agent for polishing copper and polishing method using the same Download PDF

Info

Publication number
TW201134928A
TW201134928A TW099144038A TW99144038A TW201134928A TW 201134928 A TW201134928 A TW 201134928A TW 099144038 A TW099144038 A TW 099144038A TW 99144038 A TW99144038 A TW 99144038A TW 201134928 A TW201134928 A TW 201134928A
Authority
TW
Taiwan
Prior art keywords
polishing
abrasive
agent
acid
copper
Prior art date
Application number
TW099144038A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroshi Ono
Takashi Shinoda
Yuuhei Okada
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201134928A publication Critical patent/TW201134928A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW099144038A 2009-12-21 2010-12-15 Polishing agent for polishing copper and polishing method using the same TW201134928A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009289351 2009-12-21

Publications (1)

Publication Number Publication Date
TW201134928A true TW201134928A (en) 2011-10-16

Family

ID=44195505

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099144038A TW201134928A (en) 2009-12-21 2010-12-15 Polishing agent for polishing copper and polishing method using the same

Country Status (4)

Country Link
JP (1) JPWO2011077973A1 (ja)
KR (1) KR20120059592A (ja)
TW (1) TW201134928A (ja)
WO (1) WO2011077973A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102609113B1 (ko) * 2016-05-26 2023-12-04 후지필름 가부시키가이샤 연마액, 연마액의 제조 방법, 연마액 원액, 및 화학적 기계적 연마 방법
KR102210253B1 (ko) * 2017-12-07 2021-02-01 삼성에스디아이 주식회사 구리 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
TW202244210A (zh) 2021-03-24 2022-11-16 日商福吉米股份有限公司 具有氮化矽去除速率增加劑的氮化矽化學機械拋光漿料及其使用方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5080012B2 (ja) * 2006-02-24 2012-11-21 富士フイルム株式会社 金属用研磨液
JP2008288537A (ja) * 2007-05-21 2008-11-27 Fujifilm Corp 金属用研磨液及び化学的機械的研磨方法

Also Published As

Publication number Publication date
JPWO2011077973A1 (ja) 2013-05-02
WO2011077973A1 (ja) 2011-06-30
KR20120059592A (ko) 2012-06-08

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