KR20120059592A - 구리 연마용 연마제 및 그것을 이용한 연마 방법 - Google Patents
구리 연마용 연마제 및 그것을 이용한 연마 방법 Download PDFInfo
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- KR20120059592A KR20120059592A KR1020127008156A KR20127008156A KR20120059592A KR 20120059592 A KR20120059592 A KR 20120059592A KR 1020127008156 A KR1020127008156 A KR 1020127008156A KR 20127008156 A KR20127008156 A KR 20127008156A KR 20120059592 A KR20120059592 A KR 20120059592A
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- polishing
- abrasive
- copper
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- RIKMMFOAQPJVMX-UHFFFAOYSA-N fomepizole Chemical compound CC=1C=NNC=1 RIKMMFOAQPJVMX-UHFFFAOYSA-N 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2009-289351 | 2009-12-21 | ||
JP2009289351 | 2009-12-21 | ||
PCT/JP2010/072250 WO2011077973A1 (ja) | 2009-12-21 | 2010-12-10 | 銅研磨用研磨剤及びそれを用いた研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120059592A true KR20120059592A (ko) | 2012-06-08 |
Family
ID=44195505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127008156A KR20120059592A (ko) | 2009-12-21 | 2010-12-10 | 구리 연마용 연마제 및 그것을 이용한 연마 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2011077973A1 (ja) |
KR (1) | KR20120059592A (ja) |
TW (1) | TW201134928A (ja) |
WO (1) | WO2011077973A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190067666A (ko) * | 2017-12-07 | 2019-06-17 | 삼성에스디아이 주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102609113B1 (ko) * | 2016-05-26 | 2023-12-04 | 후지필름 가부시키가이샤 | 연마액, 연마액의 제조 방법, 연마액 원액, 및 화학적 기계적 연마 방법 |
TW202244210A (zh) | 2021-03-24 | 2022-11-16 | 日商福吉米股份有限公司 | 具有氮化矽去除速率增加劑的氮化矽化學機械拋光漿料及其使用方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5080012B2 (ja) * | 2006-02-24 | 2012-11-21 | 富士フイルム株式会社 | 金属用研磨液 |
JP2008288537A (ja) * | 2007-05-21 | 2008-11-27 | Fujifilm Corp | 金属用研磨液及び化学的機械的研磨方法 |
-
2010
- 2010-12-10 JP JP2011547471A patent/JPWO2011077973A1/ja active Pending
- 2010-12-10 KR KR1020127008156A patent/KR20120059592A/ko not_active Application Discontinuation
- 2010-12-10 WO PCT/JP2010/072250 patent/WO2011077973A1/ja active Application Filing
- 2010-12-15 TW TW099144038A patent/TW201134928A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190067666A (ko) * | 2017-12-07 | 2019-06-17 | 삼성에스디아이 주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2011077973A1 (ja) | 2013-05-02 |
WO2011077973A1 (ja) | 2011-06-30 |
TW201134928A (en) | 2011-10-16 |
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