KR20120059592A - 구리 연마용 연마제 및 그것을 이용한 연마 방법 - Google Patents

구리 연마용 연마제 및 그것을 이용한 연마 방법 Download PDF

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Publication number
KR20120059592A
KR20120059592A KR1020127008156A KR20127008156A KR20120059592A KR 20120059592 A KR20120059592 A KR 20120059592A KR 1020127008156 A KR1020127008156 A KR 1020127008156A KR 20127008156 A KR20127008156 A KR 20127008156A KR 20120059592 A KR20120059592 A KR 20120059592A
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KR
South Korea
Prior art keywords
polishing
abrasive
copper
agent
content
Prior art date
Application number
KR1020127008156A
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English (en)
Korean (ko)
Inventor
히로시 오노
타카시 시노다
유헤이 오카다
Original Assignee
히다치 가세고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 히다치 가세고교 가부시끼가이샤 filed Critical 히다치 가세고교 가부시끼가이샤
Publication of KR20120059592A publication Critical patent/KR20120059592A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020127008156A 2009-12-21 2010-12-10 구리 연마용 연마제 및 그것을 이용한 연마 방법 KR20120059592A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-289351 2009-12-21
JP2009289351 2009-12-21
PCT/JP2010/072250 WO2011077973A1 (ja) 2009-12-21 2010-12-10 銅研磨用研磨剤及びそれを用いた研磨方法

Publications (1)

Publication Number Publication Date
KR20120059592A true KR20120059592A (ko) 2012-06-08

Family

ID=44195505

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127008156A KR20120059592A (ko) 2009-12-21 2010-12-10 구리 연마용 연마제 및 그것을 이용한 연마 방법

Country Status (4)

Country Link
JP (1) JPWO2011077973A1 (ja)
KR (1) KR20120059592A (ja)
TW (1) TW201134928A (ja)
WO (1) WO2011077973A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190067666A (ko) * 2017-12-07 2019-06-17 삼성에스디아이 주식회사 구리 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102609113B1 (ko) * 2016-05-26 2023-12-04 후지필름 가부시키가이샤 연마액, 연마액의 제조 방법, 연마액 원액, 및 화학적 기계적 연마 방법
TW202244210A (zh) 2021-03-24 2022-11-16 日商福吉米股份有限公司 具有氮化矽去除速率增加劑的氮化矽化學機械拋光漿料及其使用方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5080012B2 (ja) * 2006-02-24 2012-11-21 富士フイルム株式会社 金属用研磨液
JP2008288537A (ja) * 2007-05-21 2008-11-27 Fujifilm Corp 金属用研磨液及び化学的機械的研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190067666A (ko) * 2017-12-07 2019-06-17 삼성에스디아이 주식회사 구리 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법

Also Published As

Publication number Publication date
JPWO2011077973A1 (ja) 2013-05-02
WO2011077973A1 (ja) 2011-06-30
TW201134928A (en) 2011-10-16

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E902 Notification of reason for refusal
E601 Decision to refuse application