TW201037765A - Dry etching method - Google Patents

Dry etching method Download PDF

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Publication number
TW201037765A
TW201037765A TW098128384A TW98128384A TW201037765A TW 201037765 A TW201037765 A TW 201037765A TW 098128384 A TW098128384 A TW 098128384A TW 98128384 A TW98128384 A TW 98128384A TW 201037765 A TW201037765 A TW 201037765A
Authority
TW
Taiwan
Prior art keywords
etching
etching step
pattern
gas
rate
Prior art date
Application number
TW098128384A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshiharu Inoue
Hiroaki Ishimura
Hitoshi Kobayashi
Masunori Ishihara
Toru Ito
Toshiaki Nishida
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201037765A publication Critical patent/TW201037765A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Drying Of Semiconductors (AREA)
TW098128384A 2009-04-01 2009-08-24 Dry etching method TW201037765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009089103A JP2010245101A (ja) 2009-04-01 2009-04-01 ドライエッチング方法

Publications (1)

Publication Number Publication Date
TW201037765A true TW201037765A (en) 2010-10-16

Family

ID=42826516

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098128384A TW201037765A (en) 2009-04-01 2009-08-24 Dry etching method

Country Status (4)

Country Link
US (1) US8207066B2 (https=)
JP (1) JP2010245101A (https=)
KR (1) KR101095603B1 (https=)
TW (1) TW201037765A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020012005A (ko) * 2002-01-12 2002-02-09 오병희 무술주
JP5719648B2 (ja) 2011-03-14 2015-05-20 東京エレクトロン株式会社 エッチング方法、およびエッチング装置
US8575035B2 (en) * 2012-02-22 2013-11-05 Omnivision Technologies, Inc. Methods of forming varying depth trenches in semiconductor devices
CN105765703B (zh) * 2013-12-23 2021-02-23 英特尔公司 在多个鳍状物间距结构当中的笔直、高和一致的鳍状物的蚀刻技术
JP6228860B2 (ja) * 2014-02-12 2017-11-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP6486137B2 (ja) 2015-02-16 2019-03-20 キヤノン株式会社 半導体装置の製造方法
EP3067919A1 (en) * 2015-03-11 2016-09-14 IMEC vzw Method for forming vertical structures in a semiconductor target layer
JP6494443B2 (ja) * 2015-06-15 2019-04-03 東京エレクトロン株式会社 成膜方法及び成膜装置
CN105529258B (zh) * 2016-01-29 2019-04-09 上海华虹宏力半导体制造有限公司 Rfldmos工艺中稳定栅极形貌的工艺方法
US10453738B2 (en) * 2017-12-22 2019-10-22 Texas Instruments Incorporated Selective etches for reducing cone formation in shallow trench isolations
KR102867100B1 (ko) * 2018-12-05 2025-09-30 램 리써치 코포레이션 기판 내에 격리 피처들 및 치밀 피처들 에칭
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
JP7585720B2 (ja) * 2020-11-04 2024-11-19 富士電機株式会社 溝深さの調整方法及び半導体装置の製造方法
US12327731B2 (en) 2022-02-25 2025-06-10 Samsung Electronics Co., Ltd. Etching gas mixture and method of manufacturing integrated circuit device using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
KR910010516A (ko) * 1989-11-15 1991-06-29 아오이 죠이치 반도체 메모리장치
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
KR100257149B1 (ko) * 1997-06-24 2000-05-15 김영환 반도체 소자의 제조 방법
JP4013308B2 (ja) * 1998-01-21 2007-11-28 ヤマハ株式会社 配線形成方法
JP4039504B2 (ja) * 1998-11-10 2008-01-30 シャープ株式会社 半導体装置の製造方法
JP2001053138A (ja) * 1999-08-10 2001-02-23 Sanyo Electric Co Ltd 半導体装置の製造方法
US6677242B1 (en) * 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
KR100781033B1 (ko) * 2005-05-12 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP4816478B2 (ja) * 2007-02-02 2011-11-16 東京エレクトロン株式会社 エッチング方法及び記憶媒体
US8809196B2 (en) * 2009-01-14 2014-08-19 Tokyo Electron Limited Method of etching a thin film using pressure modulation

Also Published As

Publication number Publication date
KR20100109832A (ko) 2010-10-11
US20100255612A1 (en) 2010-10-07
KR101095603B1 (ko) 2011-12-19
US8207066B2 (en) 2012-06-26
JP2010245101A (ja) 2010-10-28

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