TW201024836A - Display drivers - Google Patents
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- TW201024836A TW201024836A TW098136078A TW98136078A TW201024836A TW 201024836 A TW201024836 A TW 201024836A TW 098136078 A TW098136078 A TW 098136078A TW 98136078 A TW98136078 A TW 98136078A TW 201024836 A TW201024836 A TW 201024836A
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- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000010023 transfer printing Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000412 dendrimer Substances 0.000 description 3
- 229920000736 dendritic polymer Polymers 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920002098 polyfluorene Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920000891 common polymer Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal chalcogenides Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/129—Chiplets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Description
201024836 · 六、發明說明： 【先前技術】 近年來’ &著1M w 11的品質改良、成本下降及應用範固 之擴大’市場對顯示器之需求大幅上升。對諸如τν或電 腦&視器之大面積顯示器及用於可檇式裝置之較小顯示器 之需求均有所上升。 參 儘管基於有機發光二極體（OLED)之顯示器因其包括耗 月一 b低重量小、視角開闊、對比度良好及演變為可棱性顯 不益之可能性在内之諸多優點而日益引人關注，目前市場 上最通用類別之顯示器仍為液晶顯示器及電漿顯示器。 一 OLED之基本結構是一發光有機物層，例如一聚對笨 乙块（PPV)或聚苟薄膜，該薄膜被央於一用以將負電荷載 子（電子）注射入該有機物層中之陰極與一用以將正電子載 子(電洞)注射入該有機物層中之陽極之間。電子及電洞於 該有機物層中組合’從而產生光子。在觸⑷中， 該有機發光材料為-種共輛聚合物。在仍4,539,5〇7中， 該有機發光材料為一類被稱為小分子材料之材料，例如8- M基㈣(「A1q3」在—實務裝置中該等電極中之 者孫透明，以允許該等光子逸出該裝置。 一典型的有機發光裝置（「〇LED」）係於一塗佈有一諸 如氧化銦錯（「IT0」）之透明陽極的玻璃或塑膠基板上製 作。由至少-種電致發光有機材料形成之一薄膜層覆蓋該 第一電極。最終’ 一陰極覆蓋該電致發光有機材料層。該 陰極一般為—種金屬或合金，且可包括-單-層，諸如 144165.doc 201024836 銘’或複數個層’諸如約及Is。在操作中，電洞係經由該 陽極注入該裝置中，且電子係經由該陰極注入該裝置中。 該等電洞及電子於該有機電致發光層中組合以形成一激 子，該激子之後經歷發射衰變而發出光。可以紅色、綠色 及藍色電致發光子像素對該裝置進行像素化，以提供一全 彩顯示器。 全彩液晶顯示器一般包括一白光發射背光模組，且自該 裝置發射之光在穿過該LC層之後由紅色、綠色及藍色濾色 器過濾以提供所需之彩色影像。 可使用一白光或藍光OLED，並組合濾色器，以同樣方 式來製作一全彩顯示器。此外，業已證實，即使該裝置之 像素已包括紅色、綠色及藍色子像素，滤色器與〇遍組 合使用仍有益。特別是使紅色濾色器與紅色電致發光子像 素對準且使綠色子像素與綠色濾色器且藍色子像素與藍色 滤色器對準可改良該顯示器的色彩純度（為避免疑惑，本 文使用之「像素」係指一發射僅一單一顏色的像素，或一 包括複數個可個別定址之子像素的像素，該等子組合起來 可促成該像素發射各種顏色）。 作爲彩色遽色器之替代性方案或除此之外，可藉由色變 媒體（CCM)進行降頻轉換以吸收所發射之光且以—希望的 較長波長或波長帶再發射。 對諸如LCD或OLED之顯示器進行定址之一方法是使用 主動矩陣」配置，為辞士 ,. 一 干」直在”亥主動矩陣中，一顯示器之個別 像素元件係由一關聯之薄膜雷 浔膘電日日體致動。用於此等顯示器 144165.doc 201024836
之主動矩陣背板可由非晶矽（a_si)或低溫多晶矽（LTPS)製 成。LTPS具有高流動性但可能為非均勻的，且需要高處 理溫度’而高處理溫度會限制可使用該LITS之基板的範 圍。非晶矽無需此般高處理溫度，但其流動性相對低，且 在使用期間會因老化效應而遭受不一致性。此外，由或 LTPS或a-Si形成之背板均要求諸如光微影、清潔及退火的 處理步驟，而該等步驟可能會損壞下方之基板。特別是， 對於LTPS，必須選擇一可抵抗此等高能處理的基板。例 如，對圖案化之一替代方法可見於R〇gers等人發表之Appl.
Phys. Lett. 2004，84(26)，5398-5400、R0gers 等人發表之 Phys. Leu. 2006, 88, 213101-及 Benkend〇rfer 等人發表之 Compound Semiconductor’ June 2007中，在該等文獻中， 使用諸如光微影之習知方法，將絕緣體上矽圖案化至複數 個7L件（下文稱為「小晶片」）中，而該等元件之後被轉移 至一裝置基板。藉由使複數個小晶片與一彈性體印模（該 彈性體印模具有表面化學功能性’使得該等小晶片黏固至 該印模)接觸且之後將該等小晶片轉移至該裝置基板來進 行該轉移印刷處理。以此方式’可將攜有諸如顯示驅動電 路之微尺度及奈米尺度結構的小晶片以良好的配準效果轉 移至-端基板上，該步驟無需經受残案化中涉及之要求 苛刻的處理。 【發明内容】 根據本發明之-態樣，提供—種製造用於主動矩陣！ 器之控制電路之方法’其中該控制電路包括複數個d 144165.doc 201024836 片，該方法包括：將該控制電路定位於該顯示區域之外 侧；及將該控制電路之複數個輸出分配至為該複數個小晶 片所環繞之該顯示區域驅動電路。 貫牙此說明書’該術語「控制雷 ^刺電路」係用以指用於程式 化§亥驅動電路之電路，「驅動雷攸 . 苟更路」係用以指用於直接驅 動3玄顯不之像素之電路；且「顯千M -It 顯不區域」係用以指由該 顯示器之像素與關聯驅動電路所界定之區域。 較佳的是，該方法進-步包括對該絕緣體上小晶片進行 圖案化之一步驟。 較佳的是，該方法進-步包括將該等小晶片經由一轉移 印刷處理而轉移至一裝置基板之一步驟。 較佳的是，該方法進一步包括使該複數個小晶片與一彈 性體印模（該彈性體印模具有表面化學功能性，使得該等 小晶片黏固至該印模）接觸且將該等小晶片轉移至該裝置 基板之一步驟。 在一較佳貫施例中，該驅動電路包括a Si4LTps。在另 一較佳實施例中，該驅動電路包括小晶片。 根據本發明之一實施例，提供一種主動矩陣顯示器，其 包括：該矩陣之一包括驅動電路之顯示區域；該顯示區域 外侧之包括小晶片之控制電路，其中該控制電路之該輸 出被分配於該複數個小晶片之間。 較佳的疋，该主動矩陣顯示器進一步包括一用於環境光 偵測之光學感測器。 根據一實施例，藉由使用—驅動器小晶片陣列（由位於 144165.doc 201024836 該主動顯示矩陣區域外側的一驅動器 助益所驅動），損失給扇 入及扇出連接件之基板區域有所減小。 步之優點及新穎特徵 在附加技術方案中可發現進_ 【實施方式】 為了更好地瞭解本發明及如何將本發明付諸實施，現將 僅以舉例之方式參考該等附加圖式。
該等小晶片係可由半導體晶圓源，包含諸如單晶石夕晶 圓、多晶石夕晶圓、鍺晶圓之塊狀半導體晶圓；諸如超薄石夕 晶圓之超薄半導體晶圓；諸如p型及n型摻雜晶圓及摻雜 劑；絕緣體晶圓上半導體’諸如絕緣體上矽(例如si_ si〇2); &基板晶圓上半導體’諸如基板晶圓上石夕及絕緣 體上矽之空間分佈係選擇性之晶圓之經摻雜半導體晶圓製 成。此外，亦可藉由使各種非晶圓源，諸如非晶、多晶及 單晶半導體材料（例如，多晶矽、非晶矽、多晶GaAs及非 晶GaAs)薄臈沈積於一犧牲性層或基板（例如311^或si〇j上 且隨後進行退火來製作本發明之可印刷半導體元件，亦可 使用其他塊狀晶體，包含但不限於，石墨、M〇Se2及其他 轉變金屬硫族化物及紀鋇銅氧化物。 可使用熟練技術人員所熟知之習知處理方式來形成小晶 片0 較佳的是’每個驅動器或LED小晶片長度高達5〇0微 米’較佳為約15-250微米且較佳寬度為約5_50微米，較佳 為5-1 0微米。 轉移處理 144165.doc 201024836 用於轉移印刷中之該印模較佳為一 PDMS印模。 該印模之表面可具一項化學功能性，該化學功能性使得 該等小晶片可逆地黏固至該印模且自該施體基板剝離或可 藉由例如凡德瓦力而黏固。同樣地，在轉移至該端基板之 後，該等小晶片係藉由凡德瓦力及/或藉由與該端基板之 該表面上之一項化學功能性相互作用而黏附至該端基板， 且因此該印模可自該等小晶片剝離。 小晶片與顯示器整合 該等印有用於對一顯示器之像素或子像素進行定址之驅 動電路之小晶片可被轉移印刷至一基板上，該基板載有用 於將該等小晶片連接至—電源之跡線，且可視需要在該顯 示區域外側承載用於程式化該等小晶片之驅動器。 為確保將該小晶片準確地轉移至一製備之端基板上，可 藉由熟練技術人員所知曉之方式，例如在該基板上提供對 準標記來使該印模及端基板配準。 或者，可於該等小晶#已被轉移印刷之後來追縱該等小 晶片之連接。 β在該等小晶片驅動-顯示11 ’例如—LCD或OLED顯示 器之ft形下’包括該等小晶片之背板係較佳塗佈有一種絕 緣材料層以形成—平面化層，該顯示器可建構於該平面化 層上。該顯示裝置之電極係藉由形成於該平面化層中之導 電性通孔而連接至該等小晶片之該輸出。
有機OLED 根據本發明之該裝置 在該顯示器為一 OLED之情形下 144165.doc 201024836 包括一於其上已形成該背板（未圖示）之玻璃或塑膠基板1， 一陽極2及一陰極4。陽極2與陰極4之間設有一電致發光層 3 〇 在一實務裝置中，該等電極中之至少一者為半透明，以 可發射光。在該陽極為透明之情形下，該陽極一般包括氧 化銦錫。較佳的是，該陰極為透明，以防止在光係經由該 陽極發射之情形下’自電致發光層3所發射之光被該等小 晶片及其他關聯之驅動電路吸收之問題。一透明陰極一般 9 包括一電子注射材料層，談層充分薄以至透明。一般而 言’此層之橫向傳導性將因其纖薄而顯低。在此情形下， 將該電子注射材料層與一由諸如氧化銦錫之透明傳導性材 料所形成之較厚層組合而使用。 應瞭解，一透明陰極裝置無需一透明陽極（當然，除非 需要一完全透明裝置），且因此可使用諸如一鋁層之反射 性材料層取代或補充用於底部發射裝置之該透明陽極。例 ❿ 如GB 2348316中對透明陰極裝置之實例有所揭示。 用於層3中之合適材料包含小分子聚合物及樹狀聚合物 材料及其等之組合物。用於層3中之合適的電致發光聚合 物包含聚（亞芳基伸乙烯），諸如聚（對_伸苯基伸乙烯），及聚 伸芳基’諸如聚苟’尤其是2,7鍵合9,9二氫基聚苟或2,7鍵 。9,9一芳基聚苗，聚螺苟，尤其是2,7鍵合聚9,9螺苟；聚 節并螺，尤其是2,7鍵合聚節并苟；聚伸苯基，尤其是烷 基或環氧基被取代之聚丨，4伸苯基。在例如Adv. Mater. 2000 12(23) 173 7-1750及其中的參考中揭示此等聚合物。 J44J65.doc 201024836 適用於層3中之電致發光樹狀聚合物包含攜有樹狀聚合物 基之電致發光金屬複合物，例如w〇 〇2/()66552中所揭示。 一陽極2與陰極3之間可設有其他層’例如電荷傳輸層、電 荷注射層或電荷阻播層。 該裝置宜由—密封劑（未圖示）密封以防止濕氣及氧氣進 入。適合之密封劑包含具有合適之障壁性質的玻璃片、薄 膜例:it WO 01/81649中所揭示之由聚合物與介電質組成 之交替式堆疊體，或例如w〇 〇1/19142中所揭示之一總氣 密容器。可於該基板與該密封件之間設置—種吸氣劑材 料’以吸收任何可渗透穿過該基板或密封劑的域濕氣及/ 或氧氣。 圖1顯示一裝置，其令該裝置係藉由首先於一基板上形 成一陽極且繼之沈積一電致發光層或一陰極而形成，然 而，應瞭解，亦可藉由首先於一基板上形成一陰極，繼之 沈積一電致發光層及一陽極來形成本發明之該裝置。 圖2A顯示一種先前技術之主動矩陣顯示器及驅動電路之 一實例。如所示，該基板101包括扇入及扇出連接件1〇2， 其等佔據了該基板的大塊區域，因此使該基板的顯示區域 大大地減小。 圖2B顯示根據本發明之一實施例之一主動矩陣顯示器組 態。如所示’圖2A之該等扇入及扇出連接件102包括該主 動顯示區域101之外側之複數個小晶片1〇3。此配置較為有 利’原因在於’該等小晶片使扇入及扇出結構較小，因此 使該基板可供顯示區域使用之比例較大。此外，由於該顯 144165.doc -10- 201024836 示區域的外側的該等小晶片 日方之阿度一般在微米範圍内，而 先前技術之控制電路配置（例 v J ^ 圖2A中所不之類型）之厚 又般在數百微米至若干毫米之範圍内，因此，該配置之 密封性得以改良。在此配置中，該控制電路為該顯示器之 最厚的部分且因此是減小該顯示器厚度以及㈣面積之限 制因素。此外，丨曰y々成 卜小曰曰月之使用與可撓性顯示器相容性更 佳’儘官該等小晶片自身並不一定為可撓性，當設於一可
撓性基板上時，則小晶片之一陣列可被彎曲。 熟悉此項技術者將瞭解’雖然、此揭示已描述了被認為是 最佳且在適當之情形下其他執行本發明之模式，本發明不 應限於對較佳實施例之越述中所揭示的具體組態及方 法0 【圖式簡單說明】 圖1繪示一裝置’其中該裝置係藉由首先於一基板上形 成一陽極，繼之以沈積一電致發光層及一陰極而形成； 圖2Α顯示一先前技術之主動矩陣顯示器及驅動電路之一 實例；及 圖2Β顯示根據本發明之一實施例之一主動矩陣顯示器組 態。 【主要元件符號說明】 1 玻璃或塑膠基板 2 陽極 3 電致發光層 4 陰極 144165.doc 201024836 101 基板 102 連接件 103 小晶片
144165.doc -12-
Claims (1)
- 201024836 七、申請專利範圍： 1· 一種製造一用於主動矩陣顯示器之控制電路的方法，其 中該控制電路包括複數個小晶#，該方法包括： 八 將該控制電路定位於顯示區域之外侧；及 將該控制電路之複數個輸出分配至該複數個小晶片當 中之S亥顯示區域驅動電路。 2. 如凊求項i之方;去，進—步包括對該等絕緣體上小晶 進行圖案化之一步驟。 3. 如石月求項2之方法’進一步包括經由一轉移印刷處理而 將該。亥等小晶片轉移至—裝置基板之一步驟。 4·如4求項3之方法，進—步包括使該複數個小晶片與一 彈性體印模（該彈性體印模具有使該小晶片黏固至該㈣ 之表面化學功能性）接觸且將該等小晶片轉移至該裝置基 板之一步驟。 5.如先則請求項中任一項之方法，其中該驅動 Si 或 LTPS。 6·如》月求項1至4中任一項之方法其中該驅動電路包括若 干小晶片》 一種主動矩陣顯示器，其包括： /矩陣之一顯示區域，其包括驅動電路； J電路其於该顯示區域外側包括若干小晶片； 〃。亥控制電路之輸出係分配於該複數個小晶片之 8. 如。月求項7之顯示器，進一步包括一 光學感測器。 用於環境光偵測之 144165.doc
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0819449.0A GB0819449D0 (en) | 2008-10-23 | 2008-10-23 | Display drivers |
| GB0900616A GB2464561B (en) | 2008-10-23 | 2009-01-15 | Display drivers |
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| CN (1) | CN102239560A (zh) |
| DE (1) | DE112009002522T5 (zh) |
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| CN102097458B (zh) * | 2004-06-04 | 2013-10-30 | 伊利诺伊大学评议会 | 用于制造并组装可印刷半导体元件的方法和设备 |
| JP2006091857A (ja) * | 2004-08-27 | 2006-04-06 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| US8704803B2 (en) * | 2004-08-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance using the display device |
| US7985677B2 (en) * | 2004-11-30 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP4845491B2 (ja) * | 2004-11-30 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| GB2430069A (en) * | 2005-09-12 | 2007-03-14 | Cambridge Display Tech Ltd | Active matrix display drive control systems |
| JP4415977B2 (ja) * | 2006-07-14 | 2010-02-17 | セイコーエプソン株式会社 | 半導体装置の製造方法、及び転写用の基板 |
| EP2104954B1 (en) * | 2007-01-17 | 2022-03-16 | The Board of Trustees of the University of Illinois | Optical systems fabricated by printing-based assembly |
| JP5255801B2 (ja) * | 2007-09-07 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7927976B2 (en) * | 2008-07-23 | 2011-04-19 | Semprius, Inc. | Reinforced composite stamp for dry transfer printing of semiconductor elements |
| US7999454B2 (en) * | 2008-08-14 | 2011-08-16 | Global Oled Technology Llc | OLED device with embedded chip driving |
| US8115380B2 (en) * | 2008-08-14 | 2012-02-14 | Global Oled Technology Llc | Display device with chiplets |
-
2008
- 2008-10-23 GB GBGB0819449.0A patent/GB0819449D0/en not_active Ceased
-
2009
- 2009-01-15 GB GB0900616A patent/GB2464561B/en not_active Expired - Fee Related
- 2009-10-21 CN CN2009801482653A patent/CN102239560A/zh active Pending
- 2009-10-21 DE DE112009002522T patent/DE112009002522T5/de not_active Withdrawn
- 2009-10-21 KR KR1020117011557A patent/KR20110074616A/ko not_active Application Discontinuation
- 2009-10-21 JP JP2011532710A patent/JP2012506568A/ja active Pending
- 2009-10-21 US US13/123,845 patent/US20110291572A1/en not_active Abandoned
- 2009-10-21 WO PCT/GB2009/002511 patent/WO2010046644A2/en active Application Filing
- 2009-10-23 TW TW098136078A patent/TW201024836A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012506568A (ja) | 2012-03-15 |
| WO2010046644A2 (en) | 2010-04-29 |
| GB0819449D0 (en) | 2008-12-03 |
| US20110291572A1 (en) | 2011-12-01 |
| DE112009002522T5 (de) | 2012-05-24 |
| CN102239560A (zh) | 2011-11-09 |
| WO2010046644A3 (en) | 2010-07-15 |
| GB2464561A (en) | 2010-04-28 |
| GB0900616D0 (en) | 2009-02-25 |
| GB2464561B (en) | 2011-05-18 |
| KR20110074616A (ko) | 2011-06-30 |
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