201006568 六、發明說明： 【發明所屬之技術領域】 - 本毛月係關於―種對塗佈有液體材料之基板進行加熱之 .基板加熱裝置、具備該裝置之塗佈裝置及基板加熱方法。尤 其係關於冑於半導體封裝之底部填充步驟中，在直至底部 填充步驟結束為止對於基板及載置於其上之晶片不會造成 損傷的基板加熱裝置、具備該裝置之塗佈裝置及基板加熱方 • 法。 再者’於本說明書中，有時將載置有半導體晶片等工件之 基板僅稱為基板。 【先前技術】 半導體日日片之安裝技術之-中，有被稱作倒裝晶片（flip chip)方式之技術。在倒褒晶片方式中，於半導體晶片1之 表面形成突起狀電極，將其⑽於基板2上之錄塾而直接 •連接。 於倒裝B日片封裝中，為能防止由半導體晶片丨與基板2 之熱膨脹餘之差所產生之應力射於連接部3，致使連接 部3破損，而向半導體晶片1與基板2之間隙中填充樹脂4 以加強連接部3。該步驟即稱為底部填充(參照圖^。 底部填充步驟係藉由下述方式而進行··沿著半導體晶片！ 之外周塗佈液狀旨4,並於利用毛細管現象向半導體晶片 1與基板2之間隙中填充樹脂4後，用烘箱等進行加熱，而 098122529 , 201006568 使樹脂4硬化。 近年來，製品之小型化、薄型化得到進一步發展，伴隨此 發展’倒裳晶片方式之半導體晶片1及基板2本身亦在向小 型化、薄型化發展。若變為小型、薄型，則由於容易向半導 體晶片1及基板2傳遞熱，故容易受周圍溫度之影響，在由 此而產生之上述應力之作用下，連接部3容易破損。因此， 為月b確實地進行底部填充步驟中之加強而降低樹脂之黏 度，為能容易進行填充而加熱基板。 例如，於專利文獻1中，揭示有一種基板加熱裝置，其係 藉由喷射經加熱之氣體而加熱基板者，其特徵在於其包括： 加熱單元’其具有朝向基板之底面並向上方突出而設置之突 出。P，且形成有氣體流路，該氣體流路之一端連通於突出部 之上面所形成之喷出孔，另一端連通於氣體供給部；氣體加 熱手段’其對流動於氣體流路内之氣體進行加熱；開閉閥’ 其打開或關閉氣體向氣體流路中之流入；以及閥控制部，其 藉由控制開閉閥之開閉動作而將基板加熱至目標溫度。 又’於專利文獻2中’揭示有一種電子零件之安裝方法， 其係於底部填充步驟中，在向1C晶片與基板間注入樹脂 時’對ic晶片中通電，使經加熱之熱板僅接觸IC晶片，或 者僅對1C晶片施加振動，藉此使IC晶片與基板之對向間之 樹脂的黏性低於其他部位之樹脂的黏性。 於專利文獻3中，揭示有一種半導體裝置之製造裝置，其 098122529 201006568 係具有載置已搭載有半導體晶片之捲帶式自動接合(TAJ3， Tape Automated Bonding)捲帶之塗佈台、並向半導體晶片與 TAB捲帶之間供給樹脂者，該半導體裝置之製造裝置之特 徵在於具有在塗佈台上對半導體晶片與TAB捲帶進行加熱 之加熱手段。 [先行技術文獻] [專利文獻] 專利文獻1:日本專利特開2006·314861號公報 專利文獻2:曰本專利特開2〇ί)5_45284號公報 專利文獻3 :日本專利特開2〇〇7_227558號公報 【發明内容】 (發明所欲解決之問題） 如上述各專利文獻中所記載，僅於塗佈時進行基板加熱之 基板加熱裝置在先則已存在。然而，在巾請人所瞭解的範圍 内，尚無貫穿塗佈之前後而進行基板加熱之裝置。即，先前 之基板加熱裝置存在下述問題：由於塗佈前後之搬送時為非 加熱狀態’故塗佈時與搬送時之溫度變化變大，上述因熱膨 脹係數之差所產生之應力之變化變大，因而連接部容易破 損0 因此，本發明之目的在於提供一種可貫穿塗佈作業之前後 而減小載置有半導㈣片之基板之溫度變化，肋止連接部 之破損的基板加熱裝置、具備該裝置之塗佈I置及基板加熱 098122529 5 201006568 方法。 (解決問題之手段） 第1發明係一種基板加熱裝置，其係用以自下方對朝著一 個方向被搬送、且於搬送途中對配置於其上之工件進行塗佈 作業之基板進行加熱者，其特徵在於包括：加熱構件其具 備抵接於上述基板之底面而加熱基板之平坦的上面、及形成 於該上面且向上述基板之底面嘴出加熱用氣體之嘴出用開 口；以及升降機構，其使加熱構件升降。 第2發明如第1發明，其中，上述加熱構件於其上面含有 使吸引力作用於上述基板之底面之吸引用開口，而於上述升 降機構之上升位置，自上述吸引用開口而使吸引力發揮作 用’致使上述加熱構件之上面接上述基板之底面以加熱 上述基板，而於上述升降機構之下降位置，自上述噴出用開 口喷出經加熱之氣體以加熱上述基板。 第3發明如第2發明，其中，上述喷出用開口與上述吸引 用開口係由同-開π所構成，該開卩經㈣換閥而連接於負 壓源及加壓源。 第4發明如第1至3中之任一發明，其中，存在複數個上 述開口。 第5發明如第1至4中之任一發明，其中，複數個加熱構 件係於上述基板之搬送方向上連續配設。 第6發明如第5發明，其中，上述加熱構件係由長度不同 098122529 „ 201006568 之複數種類之加熱塊所構成。 第7發明係一種液體材料塗伟裝置，其包括：如第〗至6 • ^之任一發明之基板加熱裝置；吐出上述液體材料之吐出裝 置使上述吐出裝置相對於上述基板進行相對移動之驅動機 構，將上述基板朝著—個方向搬送之搬送機構；以及控制該 等動作之控制部。 第8發明如第7發明，其十’上述控制部係在對配置於基 板上之工件進行塗佈作業時，使上述升降機構處於上升位置 而使加熱構件之上面接觸於基板之底面，並在搬送基板時， 升降機構處於下降位置而自上述喷出口喷出經加熱 第9發_—種基板加熱方法，其係用 個方向被崎、且於_射對 T讀朝耆一 作業之基板進行加熱者，其特徵在於包括.行塗佈 基板之底面，從而加熱基板;以及非=面抵接於上述 開，並自形成於二==件之上述上面分 熱用氣體。 用開口而噴出加 第1〇發明如第9發明，其中 自形成於上述加熱構件之上面、=觸加熱步驟中， 揮作用。 制.而使吸弓丨力發 098122529 201006568 第11發明如第10發明，其令，藉由同一開口而構成上述 喷出關Π與上述吸㈣開口，並將關口經由切換間而連 接於負壓源及加壓源；於上述制加熱步驟中，使上述開口 與負壓源連it，於上述非接觸加熱步驟中，使上述開口與加 壓源連通。 Μ 第12發明如第9至11中之任一發明，其中，在對配置於 上述基板上之J1件進彳τ塗佈作業時，實施上述接觸加熱步 驟在進仃上述基板之搬送時，則實施上述非接觸加熱步驟。 第13發明如第12發明’其中，於上述塗佈作業之前後實 施上述非接觸加熱步驟。 第14發明如第12或 也士 發明，其中，上述塗佈作業為底 部填充步驟。 _ 第15發明如第14發明，其中，於上述接觸加熱步驟及上 述非接觸加熱步驟中，對上述基板之整個底面進行均句加 f藉由對基板之整個底面進行均勻加熱，可更有效地保護 連接部。 、若自其他觀點來說明本發明之基板加熱裝置，則如下所 述。 本發明之基板加熱裝置係配設於㈣佈有液體材料之基 =躲送之誠輯之下方、且對上述基㈣行加熱者， :二t:包括·流路’其一端連通於流通α，另-端連通 於對與負壓源及加壓源之連通進行切換的切換閥；加熱塊， 098122529 201006568 其在與上述基板相對向之面上穿設有上述流通口，且内設有 上述流路；加熱器，其内設於上述加熱塊中，而對上述加熱 •塊進行加熱’同時對上述流路内之氣體進行加熱；溫度感測 器，其内設於上述加熱塊中，而檢測上述加熱塊之溫度；溫 度控制部，其根據來自上述溫度感測器之信號而控制上述加 熱器；以及升降機構，其在塗佈液體材料時自底面接觸並支 持上述基板的上升位置、及搬送上述基板時上述加熱塊之與 • 上述基板相對向之面與上述基板分開的下降位置之間，使上 述加熱塊進行升降移動。 較佳為：上述加熱塊在位於上述上升位置時，藉由上述切 換閥而與負壓源連通，而自上述流通口吸引氣體，於上述加 熱塊上吸附自底面受到支持之上述基板，使上述加熱塊接觸 於上述基板從而加熱上述基板；在位於上述下降位置時，藉 由切換閥而與加壓源連通，使經上述加熱器所加熱之流路内 修之氣體自上述流通口朝向存在於與上述加熱塊分開之位置 的上述基板底面喷出，藉以加熱上述基板。此處更佳為：於 上述加熱塊中穿設有複數個上述流通口，且内設有複數個上 述流路。 又，較佳為：上述流路分為第一流路及第二流路，其中， 第一流路之—端連通於第一流通口，另一端連通於對與負壓 源之連通進行切換的第一閥，第二流路之一端連通於第二流 通口，另一端連通於對與加壓源之連通進行切換的第二閥； 098122529 9 201006568 上述加熱塊在與基板相對向之面上穿設有上述第 一流通口 及上述第二流通口，且内設有上述第一流路及上述第二流路 此處’更佳為：上述加熱塊在位於上述上升位置時，藉由 上述第一閥而與負壓源連通，而自上述第一流通口吸引氣 體，於上述加熱塊上吸附自底面受到支持之上述基板，使上 述加熱塊接觸於上述基板從而加熱上述基板；在位於上述下 降位置時，藉由上述第二閥而與加壓源連通，使經上述加熱 器所加熱之第二流路内之氣體自上述第二流通口朝向存在 於與上述加熱塊分開之位置的上述基板底面喷出，藉以加熱 上述基板。此處進一步更佳為：於上述加熱塊中穿設有複數 個上述第-流通口及上述第二流通口，且内設有複數個上述 第一流路及上述第二流路。 若自其他觀點來說明本發明之塗佈裝置，則如下所述。 本發明之塗佈裝置之特徵在於包括：上述任一基板加熱装 置’吐出液體材料之吐出裝置；使上述吐出裝置相對於基板 進行相對移動之驅動機構；延設於塗佈裝置内並搬送上述基 板之搬送機構；以及控制該等動作之控制部。此處較佳為， 上述搬送機構分為複數個部分’對應上述搬送機構之複數個 部分而分別设置複數個上述基板加熱裝置。 (發明效果） 根據本發明’不僅於塗佈時、而且於其前後之搬送時亦進 行加熱，故例如於底部填充步驟中，載置有半導體晶片之基 098122529 10 201006568 板之溫度變化極小，從而可防止連接部之破損。 又，由於在塗佈作業期間可使基板之溫度變化變得極小， • 因而液體材料之狀態穩定，可穩定地進行塗佈。 進而，由於可利用一個加熱機構而實施兩種不同之加熱方 式，因而塗佈時及非塗佈時(搬送時)之任一加熱岣可利用一 個加熱機構來應對。因此，可實現裝置之小型化。 【實施方式】 • 以對配置有半導體晶片之基板實施底部填充步驟之情況 為例’說明用以實施本發明之一形態。 [加熱機構本體] 將本發明之基板加熱機構105之概略立體圖表示於圖2 中。又，將主要部分剖面圖、框線圖分別表示於圖3、圖4 中。 本實施形態之加熱機構105之主要部分即加熱塊u係大 • 致為長方體形狀，而與基板相對向之上面12成為與美板2 之大小大致相同寬窄之面。 於上面12上，以一定之間隔均勻地配置有複數個第一流 通口 13及複數個第二流通口；u。此處，圖2所示之流通口 13及14之配置僅為一例，該配置可適當變更，但於本實施 例之开> 態中，從保護連接部之觀點而言，為能使基板2之整 個底面無溫度差而採用均勻配置。 複數個第一流通口 13為吸引用開口，其連通於加熱塊u 098122529 11 201006568 中所内设之複數個第一流路15。又，複數個第二流通口 14 為喷出用開口’其分別連通於加熱塊11中所内設之複數個 第二流路16。複數個第一流路15經由第一閥17而與負壓 源19連通，複數個第二流路16經由第二閥18而與加壓源 2〇連通。藉由開閉該第一閥17及第二閥18而可吸入流路 (15、16)内之氣體、或者向流路内喷出氣體。此處，第一閥 17及第一闕18較佳為設置在與加熱塊u不同之部位。又， 第一閥17及第二閥18可根據負壓源19及加壓源2〇之強度 而設置複數個。於流路（15、16)中流動有空氣作為作動氣 體’但並不限定於此’例如在惰性氣體較佳之情況下，亦可 使用氮氣等。 加熱器21設置於加熱塊^内部，對加熱塊丨丨及第二流 路16内之氣體進行加熱。本實施形態中’於加熱器21中使 用有電熱加熱器，但不限定於此，例如亦可使用珀爾帖元件 (peltier device)等。再者’所設置之加熱器之數量可為數個， 其配置亦可適當變更’但是從保護連接部之觀點而言，較佳 為採用使基板2之整個底面不產生溫度差之數量及配置。 又，與加熱器21 一併，於加熱塊11内部設置有溫度感測 器22。並且’加熱器21及溫度感測器22連接於溫度控制 部23 ’溫度控制部23根據來自溫度感測器22之信號而控 制加熱器21，以使其溫度一定。作為控制方法，並無特別 限定，可使用溫度控制中常使用之PID (Pr〇p〇rti〇nal Integral 098122529 12 201006568 微分)控制、一般的反饋控制、 。再者，溫度感測器22之配置及201006568 VI. Description of the Invention: [Technical Field of the Invention] - This is a method for heating a substrate coated with a liquid material, a substrate heating device, a coating device including the device, and a substrate heating method. In particular, in the underfill step of the semiconductor package, the substrate heating device that does not cause damage to the substrate and the wafer placed thereon until the end of the underfill step, the coating device including the device, and the substrate heating method • Law. Further, in the present specification, a substrate on which a workpiece such as a semiconductor wafer is placed may be simply referred to as a substrate. [Prior Art] Among the semiconductor semiconductor chip mounting technologies, there is a technique called a flip chip method. In the inverted wafer method, a projecting electrode is formed on the surface of the semiconductor wafer 1, and (10) is directly recorded on the substrate 2. In the flip-chip B-day package, the stress generated by the difference between the thermal expansion of the semiconductor wafer and the substrate 2 is prevented from being incident on the connection portion 3, causing the connection portion 3 to be broken, and the gap between the semiconductor wafer 1 and the substrate 2 is caused. The resin 4 is filled in to strengthen the joint portion 3. This step is called underfilling (see Fig. 2). The underfilling step is performed by the following method: along the semiconductor wafer! The liquid coating is applied to the outer periphery, and the semiconductor wafer 1 and the substrate are utilized by capillary action. After the resin 4 is filled in the gap of 2, it is heated by an oven or the like, and 098122529 and 201006568 harden the resin 4. In recent years, the miniaturization and thinning of the product have been further developed, and the semiconductor wafer 1 of the wafer type has been developed along with this development. The substrate 2 itself is also miniaturized and thinned. When it is small and thin, heat is easily transferred to the semiconductor wafer 1 and the substrate 2, so that it is easily affected by the ambient temperature, and the stress generated thereby In the meantime, the connection portion 3 is easily damaged. Therefore, the adhesion in the underfill step is reliably performed to reduce the viscosity of the resin, and the substrate can be heated to facilitate the filling. For example, Patent Document 1 discloses a method. A substrate heating device that heats a substrate by spraying a heated gas, characterized in that it comprises: a heating unit having a facing orientation a bottom surface of the plate protrudes upwardly and protrudes upwardly. P is formed with a gas flow path, one end of the gas flow path communicates with a discharge hole formed on the upper surface of the protruding portion, and the other end communicates with the gas supply portion; gas heating a means for heating a gas flowing in a gas flow path; an opening and closing valve that opens or closes an inflow of gas into the gas flow path; and a valve control unit that heats the substrate by controlling opening and closing operations of the opening and closing valve Further, in Patent Document 2, there is disclosed a method of mounting an electronic component in which an electric charge is applied to an ic wafer when a resin is injected between a 1C wafer and a substrate in an underfill step. The board is only in contact with the IC wafer, or vibration is applied only to the 1C wafer, whereby the viscosity of the resin between the IC wafer and the substrate is lower than that of the resin of the other portion. In Patent Document 3, a semiconductor is disclosed. The manufacturing device of the device, 098122529 201006568, has a coating table on which a tape-type automatic bonding (TAJ3, Tape Automated Bonding) tape having a semiconductor wafer is mounted, A resin is supplied between a semiconductor wafer and a TAB tape, and the semiconductor device manufacturing device is characterized in that it has a heating means for heating the semiconductor wafer and the TAB tape on the coating table. [Prior Art Document] [Patent Literature] Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-314861 (Patent Document 2) Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. Problems to be Solved) As described in each of the above-mentioned patent documents, a substrate heating apparatus that performs substrate heating only at the time of coating has existed beforehand. However, within the scope of the towel, there is no means for heating the substrate before and after coating. In other words, the conventional substrate heating apparatus has a problem that the temperature change during the application and the conveyance is large due to the non-heating state during the conveyance before and after the application, and the change in the stress due to the difference in the thermal expansion coefficient is changed. Therefore, the connecting portion is easily broken. Therefore, an object of the present invention is to provide a substrate heating device capable of reducing the temperature change of the substrate on which the semiconductor (four) sheet is placed before and after the coating operation, and the rib joint is broken. The coating I of the device and the substrate heating 098122529 5 201006568 method. (Means for Solving the Problem) The first aspect of the invention relates to a substrate heating apparatus for heating a substrate that is conveyed in one direction from the lower side and that applies a coating operation to a workpiece disposed thereon during transportation. The heating member includes a flat upper surface that abuts against a bottom surface of the substrate to heat the substrate, and a nozzle opening opening formed on the upper surface of the substrate to discharge a heating gas to the bottom surface of the substrate; and a lifting mechanism; It raises and lowers the heating member. According to a second aspect of the invention, the heating member includes a suction opening for causing an attraction force to act on a bottom surface of the substrate, and an attraction force is exerted from the suction opening at a rising position of the lifting mechanism The action 'causes the upper surface of the heating member to be connected to the bottom surface of the substrate to heat the substrate, and the heated gas is ejected from the ejection opening to lower the substrate at the lowering position of the elevating mechanism. According to a second aspect of the invention, the discharge opening and the suction opening are formed by the same-opening π, and the opening is connected to the negative pressure source and the pressurized source by (4) valve replacement. The invention of any one of the first to third aspects, wherein the plurality of the openings are present. According to a fifth aspect of the invention, the invention, wherein the plurality of heating members are continuously disposed in a conveying direction of the substrate. According to a fifth aspect of the invention, the heating member is composed of a plurality of types of heating blocks having different lengths of 098122529 „ 201006568. The seventh invention is a liquid material coating device comprising: 〖 to 1-6 • A substrate heating device according to any one of the inventions, a driving device that discharges the liquid material, a driving mechanism that relatively moves the discharging device relative to the substrate, a conveying mechanism that transports the substrate in one direction, and controls the operations According to a seventh aspect of the present invention, in the seventh aspect of the invention, the control unit is configured to apply a lifting operation to the workpiece placed on the substrate, and to bring the upper surface of the heating member into contact with the bottom surface of the substrate. And when the substrate is transported, the elevating mechanism is in the lowered position, and the heating method of the ninth-thickness-based substrate is ejected from the ejecting port, and the singularity is in the direction of the singularity The substrate is heated, and is characterized in that the bottom surface of the substrate is coated to heat the substrate; and the non-face is abutted on the opening, and The above-mentioned top heat-removing gas is formed in the second== member. The first invention according to the ninth invention is produced by the opening of the heating member, in the step of heating, and in the step of heating. According to a tenth aspect of the present invention, in the eleventh aspect of the invention, the discharge port and the suction (four) opening are formed by the same opening, and the gate is connected to the negative pressure source via the switching chamber and In the heating step described above, the opening is connected to the negative pressure source, and the opening is communicated with the pressurized source in the non-contact heating step. Μ The 12th invention is any one of the 9th to 11th According to another aspect of the invention, in the case where the J1 member disposed on the substrate is subjected to the 涂布τ coating operation, the contact heating step is performed to carry out the non-contact heating step when the substrate is transferred. The thirteenth invention is the twelfth invention In the invention, the non-contact heating step is carried out before the coating operation. The fourteenth invention is the 12th invention, wherein the coating operation is an underfilling step. In the contact heating step and the non-contact heating step, the entire bottom surface of the substrate is uniformly heated by the uniform heating of the entire bottom surface of the substrate, so that the connection portion can be more effectively protected. The substrate heating device of the present invention will be described below. The substrate heating device of the present invention is disposed under (4) the base of the liquid material, the bottom of the escaping, and the heating of the base (four) row, : a second t: includes a flow path, one end of which is connected to the flow α, and the other end is connected to a switching valve that switches the communication with the negative pressure source and the pressurized source; the heating block, 098122529 201006568, which is opposite to the substrate The flow port is provided on the surface, and the flow path is provided therein; the heater is disposed in the heating block, and heats the heating block to simultaneously heat the gas in the flow path; a sensor, which is disposed in the heating block to detect a temperature of the heating block, and a temperature control unit that controls the heater according to a signal from the temperature sensor; a lowering mechanism for bringing the liquid material into contact with the bottom surface and supporting the rising position of the substrate, and between the lowering position of the heating block and the surface opposite to the substrate when the substrate is transported, The heating block moves up and down. Preferably, when the heating block is located at the rising position, the heating block is connected to the negative pressure source by the switching valve, and the gas is sucked from the flow port, and the substrate supported by the bottom surface is adsorbed on the heating block. a heating block is in contact with the substrate to heat the substrate; and when located at the lowering position, the switching valve is connected to the pressurized source, so that the gas repaired in the flow path heated by the heater is directed from the flow port toward The bottom surface of the substrate at a position where the heating block is separated is ejected, thereby heating the substrate. More preferably, the plurality of flow ports are formed in the heating block, and a plurality of the flow paths are provided therein. Further, preferably, the flow path is divided into a first flow path and a second flow path, wherein the end of the first flow path is connected to the first flow port, and the other end is connected to the first switch for communication with the negative pressure source. a valve, one end of the second flow path is connected to the second flow port, and the other end is connected to the second valve for switching the communication with the pressurized source; 098122529 9 201006568 The heating block is disposed on the opposite side of the substrate The first flow port and the second flow port are provided, and the first flow path and the second flow path are provided therein. More preferably, when the heating block is located at the rising position, the first valve is And communicating with the negative pressure source, and attracting gas from the first flow port, adsorbing the substrate supported by the bottom surface on the heating block, contacting the heating block with the substrate to heat the substrate; and when located at the lowering position And communicating with the pressurized source by the second valve, so that the gas in the second flow path heated by the heater is from the second flow port toward the position separated from the heating block The bottom surface of the ejection substrate, the substrate is heated thereby. Further preferably, the plurality of first-flow ports and the second flow ports are formed in the heating block, and a plurality of the first flow paths and the second flow paths are provided therein. The coating apparatus of the present invention will be described below from other viewpoints. A coating apparatus according to the present invention includes: any one of the above-described substrate heating apparatuses 'discharge apparatus for discharging a liquid material; a drive mechanism for relatively moving the discharge apparatus relative to the substrate; extending the inside of the coating apparatus and transporting the substrate a transport mechanism; and a control unit that controls the operations. Preferably, the transport mechanism is divided into a plurality of portions, and a plurality of the substrate heating devices are provided corresponding to a plurality of portions of the transport mechanism. (Effect of the Invention) According to the present invention, since the heating is performed not only at the time of coating but also at the time of transporting before and after, for example, in the underfill step, the temperature of the substrate on which the semiconductor wafer is placed is 098122529 10 201006568, and the temperature change is extremely small. It can prevent breakage of the joint. Further, since the temperature change of the substrate can be made extremely small during the coating operation, the state of the liquid material is stabilized, and the coating can be stably performed. Further, since two different heating modes can be implemented by one heating means, any heating means at the time of application and at the time of non-coating (during transportation) can be handled by one heating means. Therefore, miniaturization of the device can be achieved. [Embodiment] A case in which an underfill step is performed on a substrate on which a semiconductor wafer is placed will be described as an embodiment for carrying out the present invention. [Heating Mechanism Body] A schematic perspective view of the substrate heating mechanism 105 of the present invention is shown in Fig. 2 . Moreover, the main part sectional view and the block diagram are shown in FIG. 3 and FIG. 4, respectively. The heating block u, which is a main portion of the heating mechanism 105 of the present embodiment, has a large rectangular parallelepiped shape, and the upper surface 12 facing the substrate has a surface that is substantially the same as the size of the US plate 2. On the upper surface 12, a plurality of first flow ports 13 and a plurality of second flow ports are uniformly arranged at regular intervals; u. Here, the arrangement of the flow ports 13 and 14 shown in FIG. 2 is only an example, and the arrangement can be appropriately changed. However, in the state of the present embodiment, the substrate can be made from the viewpoint of protecting the connection portion. The entire bottom surface of 2 has no temperature difference and is uniformly arranged. The plurality of first flow ports 13 are suction openings that communicate with a plurality of first flow paths 15 provided in the heating block u 098122529 11 201006568. Further, the plurality of second flow ports 14 are discharge openings 'which are respectively connected to the plurality of second flow paths 16 provided in the heating block 11. The plurality of first flow paths 15 communicate with the negative pressure source 19 via the first valve 17, and the plurality of second flow paths 16 communicate with the pressurized source 2 via the second valve 18. By opening and closing the first valve 17 and the second valve 18, the gas in the flow path (15, 16) can be sucked or the gas can be ejected into the flow path. Here, the first valve 17 and the first weir 18 are preferably disposed at portions different from the heating block u. Further, the first valve 17 and the second valve 18 may be provided in plural depending on the strength of the negative pressure source 19 and the pressurized source 2A. Air is supplied as the operating gas in the flow path (15, 16), but is not limited thereto. For example, in the case where the inert gas is preferable, nitrogen gas or the like may be used. The heater 21 is disposed inside the heating block 2 to heat the heating block 丨丨 and the gas in the second flow path 16. In the present embodiment, the electric heater is used in the heater 21. However, the present invention is not limited thereto, and for example, a peltier device or the like may be used. Further, the number of heaters provided may be several, and the arrangement thereof may be appropriately changed. However, from the viewpoint of protecting the connection portion, it is preferable to use a number and arrangement in which the temperature difference is not generated across the entire bottom surface of the substrate 2. Further, together with the heater 21, a temperature sensor 22 is provided inside the heating block 11. Further, the heater 21 and the temperature sensor 22 are connected to the temperature control unit 23'. The temperature control unit 23 controls the heater 21 based on the signal from the temperature sensor 22 so that the temperature thereof is constant. The control method is not particularly limited, and PID (Pr〇p〇rti〇nal Integral 098122529 12 201006568 differential) control, general feedback control, which is commonly used in temperature control, can be used. Furthermore, the configuration of the temperature sensor 22 and
Derivative ，比例、積分、 及簡便的接通.斷開控制等 數量可適當變更而應用。 基板2藉由搬送機構_而朝著—個方向被搬送。搬送機 構104包括兩根軌道狀構件⑽，於其間配設有加熱機構 1〇5。作為加熱機構105之主要部分的加熱塊U载置於升降 機構24上(參照圖2)。升降機構Μ具有自底面支持位於加 ❹熱塊11之上方之基板2的上升位置及使加熱塊U離開基 之下降位置。於上升位置，基板2係藉由鉤狀基板按壓 構件106與加熱塊之上面12而被夹持固定。 編動升降機構24之裝置，可使用例如藉由壓縮氣體 而使活塞㈣之氣缸、或將馬達與滾珠螺桿組合而成者等。 於塗佈液體材料4時’加熱塊u向上升位置移動而自底 面支持基板2,由此發揮作為塗佈台之作用。另一方面，於 •基板搬送時，加熱塊！！向離開基板2之下降位置移動以便 順利地進行基板搬送。為能有效地進行加熱氣體對基板溫度 之維持，加熱塊之上面12與基板2之底面之距離較佳為不 要分開太遠，例如為數mm。關於搬送機構1〇4之詳細情況， 將於實施例中說明。 [加熱態樣] 本發明之加熱機構105之加熱態樣，根據加熱塊u之位 置大致分為兩種。 098122529 13 201006568 [1]上升位置處的加熱（圖5) 當加熱塊11位於上升位置時，第一閥17連通加熱塊η 内之第一流路15與負壓源19。藉此，自加熱塊η内之第 一流路15與在另一端連通之第一流通口 吸入氣體(參照 元件符號26之箭頭）。在第一流通口 13之正上方緊鄰處存 在有基板2，在來自第一流通口 13之吸引作用下吸附基板2， 從而加熱塊之上面12與基板2之底面緊密抵接。如此，基 板2之底面會與加熱塊上面12接觸，從而來自加熱器21 之熱經由加熱塊11而直接且迅速地傳導。並且，利用溫度 控制部23進行加熱器21之控制，以使其溫度一定，藉此可 使基板2之溫度保持一定。 根據上述加熱手法，由於使加熱塊之上面12抵接於基板 2之底面，故可將來自加熱器21之熱進行有效傳導，且可 穩疋地控制基板2之溫度。穩定地控制溫度不僅可防止連接 部3之破損，亦可穩定液體材料4之狀態而使塗佈穩定。又， 藉由遍及基板面12所開設之複數個第一流通口 13而可均勻 地進行吸附，故可同樣地接觸於基板2,且可保持基板2之 平面度。 [2]下降位置處的加熱（圖6) 當加熱塊11位於下降位置時，第二閥18連通加熱塊u 内之第二流路16與加壓源2〇。藉此，自加熱塊u内之第 二流路16與在另一端連通之第二流通口 14噴出氣體(27)。 098122529 14 201006568 由於第二流通口 14會與基板2分開，因此會朝向基板之之 底面喷出氣.體。所喷出之氣體於加熱塊u内藉由加熱器Μ 受到加熱，而基板2上藉由該經加熱之氣體而傳導有熱。並 且，利用溫度控制部23進行加熱器21之控制，以使其溫度 一定，藉此可使基板2之溫度保持一定。 根據上述加熱手法，自離開之部位喷出經加熱之氣體，從 而移動中之基板2上亦傳導有熱。亦即，對於移動中之基板 ❿2亦可控制其溫度’故可使底部填充步驟内之溫度變化極 小。又，由於自遍及基板面12而開設之複數個第二流通口 14噴出經加熱之氣體，故可加熱整個基板2 ^ 將上述[1]與[2]適當組合，由此，無論在使基板2停止而 進行塗佈時，抑或使基板2移動而進行搬送時，均可使底部 填充步驟内之基板2之溫度保持一定，從而可防止半導體晶 片1與基板2之連接部3之破損。就上述[2]之下降位置處 的加熱，較佳為於塗佈作業步驟之前後進行。塗佈作業步驟 前之加熱係預備加熱’塗佈作業步驟後之加熱係將基板之溫 度變化抑制於既定範圍内之溫度保持加熱。 於以上所述中，對藉由使吸引力作用於第一流通口 13而 使基板2之底面與力σ熱塊之上面12接觸的構成進行了說明， 亦可形成為不設置第一流通口 13，而以基板按壓構件1〇6 ”升降機構24之組合’使基板2與加熱塊之上面12接觸的 構成。然而，於基板之底面被精度良好地加工之情況下，藉 098122529 15 201006568 吸引力發揮作用之流通口，可取得以使加熱塊之上 面仿"、、基板底面之太★ a - 万式進仃吸附之作用。因此，接觸面積變 而^有找物熱傳導之絲。又，於將加熱塊之上 為塗佈台之情況下，亦可取得基板2之平面度變好、 塗佈精度提高之效果。該等效果在基板2較薄的情況下尤其 顯者。另—方面，於不設置使吸引力發揮作用之流通口，而 以基板按壓構件1G6進行轉之構成巾，會產生基板之中央 部翹曲之問題。 根據以上理由’較佳為採用於加熱塊^上設置有使吸引 力發揮作用之流通口的構成。 以下利用實施例來說明本發明之詳細情況，但本發明並 未因實施例而受到任何限定。 [實施例1] [塗佈裝置] 如圖7所不，本實施例之塗佈裝置1〇1包括：吐出裝置 102、驅動機構103、搬送機構1〇4、加熱機構1〇5、及控制 該等之控制部124。 吐出裝置102包括：貯留液體材料4之貯留容H 1〇7(未 圖不）、及用以吐出液體材料4之喷嘴1〇8(參照圖丨）。該吐 出裝置102係以使喷嘴108與塗佈對象基板2之塗佈面相對 向之方式安裝於xyz驅動機構103上，可向由搬送機構1〇4 所搬送之塗佈對象基板2上移動。 098122529 16 201006568 搬送機構1〇4橫跨塗佈装置1〇1之寬度而設置，其係由三 個搬送單元（U4、115、116)所構成，可分別獨立地動作。 - 由於搬送櫟構104係由三個搬送單元所構成，因而即便當正 在進行塗佈動作時，亦可各別地進行搬入、搬出動作，從而 可縮短步驟處理時間。如圖8所示，本實施例之搬送機構 104形成為平行設置有橫跨所搬送之基板2之寬度的兩根軌 道狀構件1〇9的構造’於軌道狀構件1〇9之上方設置有於輥 ® U0之作用下而旋轉之傳送帶111。對輥110進行旋轉驅動， 藉此，傳送帶111旋轉，載置於傳送帶U1上之基板2被搬 送。兩根軌道狀構件109之寬度可對照基板2之大小進行變 更。此處，如圖7中箭頭所圖示，基板2自左侧搬送機構 114被搬入塗佈裝置ιοί内，並經由中央搬送機構115而 自右側搬送機構116被搬出至塗佈裝置1〇丨外。 加熱機構105係由三個加熱單元（121、122、123)所構成。 魯各加熱單元對應於搬送單元（114、115、116)而配設於構成 搬送機構104之兩根軌道狀構件109之間。藉由三個加熱單 元而構成加熱機構105，從而可對應於各別的搬送動作而進 行基板2之加熱。 加熱塊11係與基板2大致相同之大小，故存在著於搬入 側及搬出側等之不足基板2之大小之空間内無法設置加熱 單元之情況。因此，本實施例中，形成為設置有相較加熱單 元更小型之輔助加熱單元（118、119、12〇)之構成。與上述 098122529 17 201006568 加熱單元的不同之處在於：輔助加熱單元係於不進行升降移 動而離開基板2之下降位置被固定，以及不設置第一流通口 13而僅自第二流通口 14嘴出經加熱之氣體。輔助加熱單元 (118、119、120)之大小只要為可埋入於三個加熱單元（121、 122、123)間之大小即可’並可進行適當變更而配設。本實 施例中’於搬入部的位置上設置有輔助加熱單元118，於中 央加熱單元122與右侧加熱單元123之間的位置上設置有輔 助加熱單元119,於搬出部的位置上設置有輔助加熱單元 120。 加熱機構105之設定溫度會對應於基板2之尺寸及半導體 晶片1之數量等而變化，但大致設定於攝氏1〇〇度至150 度之範圍内。於該範圍中，亦可控制為進行與預備加熱、塗 佈時之最適溫度、及溫度保持加熱之目的相對應的加熱。 [作動] 一邊參照圖9至圖12 , —邊對本實施例之塗佈裝置1〇1 之作動加以說明。 於塗佈裝置101之左側，具有供給未塗佈之基板2之承載 斋或削步驟之裝置。於塗佈裝置101之右侧，具有回收已完 成塗佈之基板2的卸載器或後步驟之裝置。以下，為了方便 說明’將加熱單元及輔助加熱單元分別稱作台。 開始動作後，在將基板2向塗佈裝置101内搬入之前，讀 取搬入口台118及前台121之溫度（步驟1〇1)，判定其是否 098122529 18 201006568 處於設定溫度之範圍内（步驟102)。备 田禾達到設定溫度之情 況下，再㈣取溫度，反魏㈣操作直^到妓溫度為 止。當達到設定溫度之情況下，判定前台121上是否殘留有 基板2(㈣103)。在殘留有基板2之情況下，待機直至基 板2被去除為止。在未殘留基板2之情況下，開始喷出來自 搬入口台m及前台121之氣體（步驟1〇4)。並且，將基板 2搬送至前台m位置(㈣105)為止。當基板2到達前台 121位置後’停止喷出來自前台121之氣體，前台121上升 而支持基板2’從而開始前# 121之吸引以吸関定基板 2(步驟 106)。 在被固定於前台12丨後，讀取塗佈台122之溫度（步驟 107)，判定其是否處於設定溫度之範圍内（步驟1〇8)。當未 達到設定溫度之情況下，一邊對固定於前台121上之基板2 進行控制以使其溫度一定（步驟110)，一邊再次讀取溫度， • 反覆進行該操作直至達到設定溫度為止。當達到設定溫度之 情況下，判定塗佈台122上是否殘留有基板2(步驟丨09)。 在殘留有基板2之情況下，一邊對固定於前台κι上之基板 2進行控制以使其溫度—定（步驟11〇)，一邊待機直至基板 2被去除為止。在未殘留基板2之情況下，開始噴出來自塗 佈台122之氣體（步驟lu)。並且，切斷前台121之吸引， 前台121下降，從而開始喷出來自前台121之氣體(步驟 112)。其後，將基板2搬送至塗佈台122位置（步驟113)。 098122529 19 201006568 在基板2到達塗佈台122位置後，停止喷出來自塗佈台122 氣體塗佈0 122上升而支持基板2,從.而開始塗佈台122 之吸引以吸附固定基板2(步驟114)。 於塗佈台122上’藉由吐出裝置1〇2而塗佈液體材料4(步 驟115)。當塗佈結束時，讀取中間台119及後台丨23之溫 度（步驟116)’判定其是否處於設定溫度之範圍内（步驟 117)。當未達到設定溫度之情況，一邊對固定於塗佈台122 上之基板2進行控制以使其溫度一定（步驟119)，一邊再次 讀取溫度’反覆進行該操作直至達到設定溫度為止。當達到 設定溫度之情況下’判定於後台123上是否殘留有基板2(步 驟118)。在殘留有基板2之情況下，一邊對固定於塗佈台 122上之基板2進行控制以使其溫度一定（步驟119)，一邊 待機直至基板2被去除為止。在未殘留基板2之情況，開始 喷出來自中間台119及後台123之氣體（步驟120)。並且， 切斷塗佈台122之吸引，塗佈台122下降，從而開始喷出來 自塗佈台122之氣體(步驟121)。其後，將基板2搬送至後 台123位置（步驟122)。在基板2到達後台123位置後，停 止噴出來自後台123之氣體，後台123上升而支持基板2， 從而開始後台123之吸引而吸附固定基板2(步驟123)。 在被固定於後台123後，讀取搬出口台120之溫度（步驟 124)，判定其是否處於設定溫度之範圍内（步驟125)。當未 達到設定溫度之情況，一邊對固定於後台123上之基板2 ⑻8122529 20 201006568Derivative, proportional, integral, and simple turn-on. Disconnect control, etc. The quantity can be applied as appropriate. The substrate 2 is transported in one direction by the transport mechanism. The transport mechanism 104 includes two rail-like members (10) with a heating mechanism 1〇5 disposed therebetween. The heating block U, which is a main part of the heating mechanism 105, is placed on the elevating mechanism 24 (see Fig. 2). The elevating mechanism Μ has a rising position of the substrate 2 above the heat-increasing block 11 from the bottom surface and a lowered position of the heating block U away from the base. In the raised position, the substrate 2 is sandwiched and fixed by the hook substrate pressing member 106 and the upper surface 12 of the heating block. The means for composing the elevating mechanism 24 may be, for example, a cylinder of a piston (4) by a compressed gas or a combination of a motor and a ball screw. When the liquid material 4 is applied, the heating block u moves to the rising position to support the substrate 2 from the bottom surface, thereby functioning as a coating station. On the other hand, when the substrate is transported, heat the block! ! The substrate is moved to the lowered position away from the substrate 2 to smoothly carry out the substrate transfer. In order to effectively maintain the temperature of the substrate by the heating gas, the distance between the upper surface 12 of the heating block and the bottom surface of the substrate 2 is preferably not too far apart, for example, several mm. Details of the transport mechanism 1 to 4 will be described in the embodiments. [The heating state] The heating state of the heating mechanism 105 of the present invention is roughly classified into two depending on the position of the heating block u. 098122529 13 201006568 [1] Heating at the rising position (Fig. 5) When the heating block 11 is in the raised position, the first valve 17 communicates with the first flow path 15 and the negative pressure source 19 in the heating block n. Thereby, the first passage 15 in the self-heating block n and the first flow port communicating with the other end are sucked into the gas (refer to the arrow of the element symbol 26). Immediately above the first flow port 13, a substrate 2 is present, and the substrate 2 is adsorbed by suction from the first flow port 13, so that the upper surface 12 of the heat block abuts against the bottom surface of the substrate 2. Thus, the bottom surface of the substrate 2 is in contact with the upper surface 12 of the heating block, so that heat from the heater 21 is directly and rapidly conducted via the heating block 11. Further, the temperature control unit 23 controls the heater 21 so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant. According to the above heating method, since the upper surface 12 of the heating block abuts against the bottom surface of the substrate 2, heat from the heater 21 can be efficiently conducted, and the temperature of the substrate 2 can be stably controlled. The stable temperature control not only prevents breakage of the joint portion 3, but also stabilizes the state of the liquid material 4 to stabilize the coating. Further, since the plurality of first flow ports 13 formed in the substrate surface 12 can be uniformly adsorbed, the substrate 2 can be similarly contacted, and the flatness of the substrate 2 can be maintained. [2] Heating at the lowered position (Fig. 6) When the heating block 11 is in the lowered position, the second valve 18 communicates with the second flow path 16 in the heating block u and the pressurized source 2A. Thereby, the gas (27) is ejected from the second flow path 16 in the heating block u and the second flow port 14 communicating with the other end. 098122529 14 201006568 Since the second flow port 14 is separated from the substrate 2, a gas body is ejected toward the bottom surface of the substrate. The ejected gas is heated by the heater 于 in the heating block u, and the substrate 2 is heated by the heated gas. Further, the temperature control unit 23 controls the heater 21 so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant. According to the above heating method, the heated gas is ejected from the leaving portion, and heat is also transmitted to the substrate 2 which is moving. That is, the temperature of the substrate ❿2 in motion can be controlled so that the temperature variation in the underfill step can be minimized. Further, since the plurality of second flow ports 14 formed over the substrate surface 12 eject the heated gas, the entire substrate 2 can be heated. ^ [1] and [2] are appropriately combined, thereby making the substrate When the coating is stopped and the substrate 2 is moved and transported, the temperature of the substrate 2 in the underfill step can be kept constant, and the connection portion 3 between the semiconductor wafer 1 and the substrate 2 can be prevented from being damaged. The heating at the lowering position of the above [2] is preferably carried out before the coating operation step. Before the coating operation step, the heating system is preheated. The heating after the coating step is to maintain the temperature change of the substrate within a predetermined range and maintain the heating. In the above description, the configuration in which the bottom surface of the substrate 2 is brought into contact with the upper surface 12 of the force σ thermal block by applying the suction force to the first flow port 13 is also described, and the first flow port may not be provided. 13, the substrate pressing member 1 〇 6 "combination of the lifting mechanism 24" is configured to bring the substrate 2 into contact with the upper surface 12 of the heating block. However, in the case where the bottom surface of the substrate is accurately processed, it is attracted by 098122529 15 201006568 The flow port of the force function can be obtained so that the upper surface of the heating block is imitation, and the bottom surface of the substrate is too ★ a - million type to attract the adsorption. Therefore, the contact area is changed and the wire for heat conduction is found. When the heating block is used as a coating table, the flatness of the substrate 2 can be improved and the coating precision can be improved. These effects are particularly remarkable when the substrate 2 is thin. On the other hand, in the case where the flow port for causing the suction force is not provided, the substrate is pressed by the substrate pressing member 1G6, and the central portion of the substrate is warped. For the above reasons, it is preferably used on the heating block. Assume The present invention is described below with reference to the embodiments, but the present invention is not limited by the examples. [Example 1] [Coating device] Fig. 7 The coating apparatus 1〇1 of the present embodiment includes a discharge device 102, a drive mechanism 103, a transport mechanism 1〇4, a heating mechanism 1〇5, and a control unit 124 that controls the control unit 124. The discharge device 102 includes: storage The storage capacity H 1〇7 of the liquid material 4 (not shown) and the nozzle 1 8 for discharging the liquid material 4 (see FIG. 。). The discharge device 102 is for the nozzle 108 and the substrate 2 to be coated. The coated surface is attached to the xyz drive mechanism 103 so as to be movable toward the application target substrate 2 transported by the transport mechanism 1〇4. 098122529 16 201006568 The transport mechanism 1〇4 traverses the coating device 1〇1 The width is provided by three transport units (U4, 115, 116), and can be independently operated. - Since the transport mechanism 104 is composed of three transport units, even when coating is being performed When moving, you can move separately The carry-out operation can shorten the processing time of the step. As shown in Fig. 8, the transport mechanism 104 of the present embodiment is formed in a structure in which two rail-shaped members 1〇9 spanning the width of the substrate 2 to be transported are provided in parallel. A conveyor belt 111 that rotates under the action of the roller® U0 is disposed above the rail-shaped member 1〇9. The roller 110 is rotationally driven, whereby the conveyor belt 111 rotates, and the substrate 2 placed on the conveyor belt U1 is conveyed. The width of the two rail-shaped members 109 can be changed in accordance with the size of the substrate 2. Here, as shown by the arrows in Fig. 7, the substrate 2 is carried into the coating device from the left conveying mechanism 114, and passes through the central conveying mechanism. 115, the right conveyance mechanism 116 is carried out to the outside of the coating apparatus 1. The heating mechanism 105 is composed of three heating units (121, 122, 123). The Lue heating unit is disposed between the two rail-shaped members 109 constituting the transport mechanism 104 in accordance with the transport unit (114, 115, 116). The heating means 105 is constituted by three heating units, whereby the heating of the substrate 2 can be performed in accordance with the respective conveying operations. Since the heating block 11 is substantially the same size as the substrate 2, the heating unit may not be provided in the space of the size of the substrate 2 such as the loading side and the carrying-out side. Therefore, in the present embodiment, the configuration is such that an auxiliary heating unit (118, 119, 12A) which is smaller than the heating unit is provided. The difference from the above-mentioned 098122529 17 201006568 heating unit is that the auxiliary heating unit is fixed at a lowering position away from the substrate 2 without lifting movement, and the first flow port 13 is not provided and only the second flow port 14 is provided. Heated gas. The size of the auxiliary heating unit (118, 119, 120) may be any size as long as it can be buried between the three heating units (121, 122, 123), and can be appropriately changed. In the present embodiment, the auxiliary heating unit 118 is provided at the position of the loading unit, and the auxiliary heating unit 119 is provided at a position between the central heating unit 122 and the right heating unit 123, and the auxiliary unit is provided at the position of the carrying unit. Heating unit 120. The set temperature of the heating means 105 varies depending on the size of the substrate 2, the number of the semiconductor wafers 1, and the like, but is set substantially in the range of 1 to 150 degrees Celsius. Within this range, it is also possible to control the heating corresponding to the purpose of preliminary heating, optimum temperature at the time of coating, and temperature for heating. [Operation] The operation of the coating apparatus 1〇1 of the present embodiment will be described with reference to Figs. 9 to 12 . On the left side of the coating apparatus 101, there is a means for feeding the uncoated substrate 2 or the step of cutting. On the right side of the coating apparatus 101, there is an apparatus for recovering the unloader or the subsequent step of the coated substrate 2. Hereinafter, for convenience of explanation, the heating unit and the auxiliary heating unit will be referred to as a stage, respectively. After the operation is started, before the substrate 2 is carried into the coating apparatus 101, the temperature of the transfer station 118 and the front office 121 is read (step 1〇1), and it is determined whether or not 098122529 18 201006568 is within the set temperature range (step 102). ). When the preparation of Tianhe reaches the set temperature, then (4) take the temperature, and the anti-Wei (four) operation will be straight until the temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 ((4) 103) remains on the front desk 121. In the case where the substrate 2 remains, it stands by until the substrate 2 is removed. When the substrate 2 is not left, the gas from the transfer inlet m and the front end 121 is started to be ejected (step 1〇4). Then, the substrate 2 is transported to the front desk m position ((iv) 105). When the substrate 2 reaches the position of the foreground 121, the gas from the front end 121 is stopped to be ejected, and the front surface 121 rises to support the substrate 2' to start the suction of the front #121 to suck the substrate 2 (step 106). After being fixed in the foreground 12 ,, the temperature of the coating stage 122 is read (step 107), and it is judged whether it is within the range of the set temperature (step 1 〇 8). When the set temperature is not reached, the substrate 2 fixed to the front desk 121 is controlled to have a constant temperature (step 110), and the temperature is read again. • This operation is repeated until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 remains on the coating table 122 (step 丨 09). When the substrate 2 remains, the substrate 2 fixed to the foreground κ is controlled so that the temperature is constant (step 11 〇), and the substrate 2 is waited until the substrate 2 is removed. When the substrate 2 is not left, the gas from the coating station 122 is started to be ejected (step lu). Then, the suction of the front desk 121 is cut off, and the front desk 121 is lowered, so that the gas from the front desk 121 is started to be ejected (step 112). Thereafter, the substrate 2 is transferred to the position of the coating stage 122 (step 113). 098122529 19 201006568 After the substrate 2 reaches the position of the coating table 122, the discharge of the gas coating 0 122 from the coating station 122 is stopped to support the substrate 2, and the suction of the coating table 122 is started to adsorb the fixed substrate 2 (step 114). The liquid material 4 is applied to the coating station 122 by the discharge device 1 2 (step 115). When the coating is completed, the temperature of the intermediate stage 119 and the background cassette 23 is read (step 116)' to determine whether it is within the set temperature range (step 117). When the set temperature is not reached, the substrate 2 fixed to the coating table 122 is controlled so that the temperature is constant (step 119), and the temperature is read again, and the operation is repeated until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 remains on the background 123 (step 118). When the substrate 2 remains, the substrate 2 fixed to the coating table 122 is controlled to have a constant temperature (step 119), and is waited until the substrate 2 is removed. When the substrate 2 is not left, the gas from the intermediate stage 119 and the background 123 is started to be ejected (step 120). Then, the suction of the coating table 122 is cut, and the coating stage 122 is lowered to start the ejection of the gas from the coating stage 122 (step 121). Thereafter, the substrate 2 is transported to the position of the rear stage 123 (step 122). After the substrate 2 reaches the position of the background 123, the gas from the background 123 is stopped, and the background 123 rises to support the substrate 2, thereby starting the suction of the background 123 and adsorbing the fixed substrate 2 (step 123). After being fixed in the background 123, the temperature of the docking station 120 is read (step 124), and it is determined whether or not it is within the set temperature range (step 125). When the set temperature is not reached, the substrate 2 (8) 8122529 20 201006568 fixed on the background 123
反覆進行_作直錢到奴溫度為止。在制設定溫度之 If況下，判疋是否可將基板2向裝置1〇1外搬出（步驟 126)。在不能搬出之情況下，一邊對固定於後台123上之基 板2進行控制以使其溫度一定（步驟127)，一邊待機直至可 搬出為止。在可搬出之情況下，開始喷出來自搬出口台12〇 之氣體（步驟128)。並且，切斷後台ι23之吸引，後台in ❹下降，從而開始嘴出來自後台123之氣體（步驟129)。其後， 將基板2搬送至裝置101外（步驟13〇)。 上述動作表示對一片基板2之流程，當然亦可連續地對複 數片之基板2進行塗佈。於該情況下，由於步驟ι〇1至步 驟106、步驟107至步驟114、步驟115至步驟123、步 驟124至步驟130之各動作可獨立地進行，因此可同時進 行各個動作，縮短步驟處理之時間。 參[實施例2] 於實施例1中，加熱塊11内之流路分別分為負壓系統15 與加壓系統16， 但是亦可將其設為一個流路。圖13表示實 施例2之加熱機構之主要部分剖面圖，圖μ中表示其框線 實施例2之加熱塊201 之上面202成為與基板2 1大致成長方體形狀，與基板相對向 2之大小大致相同寬窄之面。於上面 202上，以— 定之間隔均勻地開設有複數個流通口 203。各 098122529 21 201006568 流通口 203連通於加熱塊2〇1中内設之流路204。流路204 通向與加熱塊201不同之部位上所設置的切換閥205，並經 由切換閥205而連通於負壓源206及加壓源207。切換該切 換閥205而使負壓源2〇6或加壓源207之任一方與流路204 連通，藉此吸入流路204内之氣體，或向流路内喷出氣體。 根據負壓源206及加壓源207之壓力強度，亦可設置複數個 切換閥205。此外之加熱器21、溫度感測器22、及升降機 構24等與實施例1相同。 當加熱塊201位於上升位置時，切換閥205連通加熱塊 201内之流路204與負壓源206。藉此，自加熱塊201内之 流路204與在另一端連通之流通口 203吸入氣體。在流通口 2〇3之正上方緊鄰處存在有基板2，在來自流通口 203之吸 引作用下吸附基板2，從而加熱塊之上面202與基板2之底 面緊密抵接。如此，由於基板2之底面會與加熱塊之上面 202接觸，從而來自加熱器之熱經由加熱塊2〇1而直接且迅 速地傳導。並且’利用溫度控制部208進行加熱器之控制， 以使其溫度一定，藉此可使基板2之溫度保持一定。 當加熱塊201位於下降位置時，切換閥205連通加熱塊 201内之流路204與加壓源207。藉此，自加熱塊201内之 流路204與在另一端連通之流通口 203喷出氣體。由於流通 口 203會與基板2分開，因此會朝向基板2之底面喷出氣體。 所喷出之氣體於加熱塊201内藉由加熱器而受到加熱，且基 098122529 22 201006568 板2上藉由該經加熱之氣體而傳導有熱。並且’利用溫度控 制部208進行加熱器之控制，以使其溫度一定，藉此可使基 _ 板2之溫度保持一定。 - 又，根據本實施例之加熱塊201，將流路設為一個系統， 藉此可減少閥及通向其之配管等’從而可節省空間。 【圖式簡單說明】 圖1係說明底部填充步驟之說明圖。 • 圖2係本發明之加熱機構之概略立體圖。 圖3係本發明之加熱機構之主要部分剖面圖。 圖4係本發明之加熱機構之框線圖。 ® 5係說明本發明之加熱塊上升位置處的加熱態樣的說 明圖。 圖6係說明本發明之加熱塊下降位置處的加減樣的說 明圖。 圖7係實施例1之塗佈裝置之概略立體圖。 圖8係說明實施例1之塗佈裝置之搬送機構的說明圖。 圖9係表示實_ 1之塗佈裝置之動作流程的流程圖。 圖1〇係表不實施例1之塗佈裝置之動作流程的流程圖。 圖11係表示實施例1之塗佈裝置之動作流程的流程圖。 :不實施例1之塗佈裝置之動作流程的流程圖。 實施例2之加熱機構之主要部分剖面圖。 圖14係實施例2之加熱機構之框線圖。 098122529 23 201006568 【主要元件符號說明】 1 工件（半導體晶片） 2 基板 3 連接部（突起狀電極、電極墊) 4 液狀樹脂、液體材料 11 、 201 加熱塊 12 > 202 與基板相對向之面（上面） 13 第一流通口（吸引用開口） 14 第二流通口（喷出用開口） 15 第一流路 16 第二流路 17 第一閥 18 第二閥 19 、 206 負壓源 20 、 207 加壓源 21 加熱器 22 溫度感測器 23 、 208 溫度控制部 24 升降機構 25 配管接頭 26 吸入之氣體流 27 喷出之氣體流 098122529 24 # # 201006568 101 102 103 104 105 106 107 Φ 108 109 110 111 112 113 114 • 115 116 118 119 120 121 122 123 塗佈裝置 吐出裝置 XYZ驅動機構 搬送機構 基板加熱機構 基板按壓構件 貯留容器 喷嘴 執道狀構件 輥 傳送帶 基板搬送方向 驅動方向 左侧搬送單元 中央搬送單元 右侧搬送單元 左侧輔助加熱單元(搬入口台） 中央輔助加熱單元（中間台） 右侧輔助加熱單元(搬出口台） 左侧加熱單元(前台） 中央加熱單元（塗佈台） 右侧加熱單元(後台） 098122529 25 201006568 124 203 204 205 209 控制部 流通口 流路 切換閥 氣體流 098122529Repeatedly _ direct money to the slave temperature. In the case of the set temperature, it is judged whether or not the substrate 2 can be carried out of the apparatus 1〇1 (step 126). When it is impossible to carry out, the substrate 2 fixed to the background 123 is controlled so that the temperature is constant (step 127), and it stands by until it can be carried out. When it is possible to carry out the discharge, the gas from the transfer port 12 is started to be ejected (step 128). Also, the attraction of the background ι23 is cut off, and the background in ❹ is lowered, thereby starting the gas from the background 123 (step 129). Thereafter, the substrate 2 is transported to the outside of the apparatus 101 (step 13A). The above operation indicates the flow of one substrate 2, and of course, the substrate 2 of a plurality of sheets can be continuously applied. In this case, since the operations from step ι1 to step 106, step 107 to step 114, step 115 to step 123, and step 124 to step 130 can be performed independently, each action can be performed simultaneously, and the step processing can be shortened. time. [Embodiment 2] In Embodiment 1, the flow path in the heating block 11 is divided into a negative pressure system 15 and a pressurizing system 16, respectively, but it may be set as one flow path. Fig. 13 is a cross-sectional view showing the main part of the heating mechanism of the second embodiment, and Fig. 2 shows the upper surface 202 of the heating block 201 of the second embodiment of the frame, which has a substantially rectangular shape with respect to the substrate 21, and has a size of 2 with respect to the substrate. The same width and width. On the upper surface 202, a plurality of flow ports 203 are uniformly opened at intervals of -. Each of the 098122529 21 201006568 flow ports 203 is connected to the flow path 204 provided in the heating block 2〇1. The flow path 204 leads to the switching valve 205 provided at a portion different from the heating block 201, and communicates with the negative pressure source 206 and the pressurized source 207 via the switching valve 205. The switching valve 205 is switched to connect one of the negative pressure source 2?6 or the pressurized source 207 to the flow path 204, thereby sucking the gas in the flow path 204 or ejecting the gas into the flow path. A plurality of switching valves 205 may be provided depending on the pressure strength of the negative pressure source 206 and the pressurized source 207. Further, the heater 21, the temperature sensor 22, the lift mechanism 24, and the like are the same as those in the first embodiment. When the heating block 201 is in the raised position, the switching valve 205 communicates with the flow path 204 and the negative pressure source 206 in the heating block 201. Thereby, the flow path 204 in the self-heating block 201 and the flow port 203 communicating with the other end are sucked into the gas. The substrate 2 is present immediately above the flow port 2〇3, and the substrate 2 is adsorbed by the suction from the flow port 203, so that the upper surface 202 of the heating block abuts against the bottom surface of the substrate 2. Thus, since the bottom surface of the substrate 2 is in contact with the upper surface 202 of the heating block, heat from the heater is directly and rapidly conducted via the heating block 2〇1. Further, the temperature control unit 208 controls the heater so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant. When the heating block 201 is in the lowered position, the switching valve 205 communicates with the flow path 204 in the heating block 201 and the pressurized source 207. Thereby, the flow path 204 in the self-heating block 201 and the flow port 203 communicating with the other end discharge gas. Since the flow port 203 is separated from the substrate 2, gas is ejected toward the bottom surface of the substrate 2. The ejected gas is heated by the heater in the heating block 201, and the base 098122529 22 201006568 is heated on the plate 2 by the heated gas. Further, the temperature control unit 208 controls the heater so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant. Further, according to the heating block 201 of the present embodiment, the flow path is set to one system, whereby the valve and the piping to which it is connected can be reduced, thereby saving space. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory diagram illustrating an underfilling step. • Fig. 2 is a schematic perspective view of the heating mechanism of the present invention. Figure 3 is a cross-sectional view showing the main part of the heating mechanism of the present invention. Figure 4 is a block diagram of the heating mechanism of the present invention. The ® 5 is an explanatory view showing the heating state at the rising position of the heating block of the present invention. Fig. 6 is an explanatory view showing addition and subtraction at the lowering position of the heating block of the present invention. Fig. 7 is a schematic perspective view of the coating apparatus of the first embodiment. Fig. 8 is an explanatory view for explaining a conveying mechanism of the coating device of the first embodiment. Fig. 9 is a flow chart showing the flow of the operation of the coating apparatus of the real type. Fig. 1 is a flow chart showing the flow of the operation of the coating apparatus of the first embodiment. Fig. 11 is a flow chart showing the flow of the operation of the coating apparatus of the first embodiment. : A flow chart showing the flow of the operation of the coating apparatus of the first embodiment. A cross-sectional view of a main portion of the heating mechanism of Embodiment 2. Figure 14 is a block diagram of the heating mechanism of the second embodiment. 098122529 23 201006568 [Description of main components] 1 Workpiece (semiconductor wafer) 2 Substrate 3 Connection (protrusion electrode, electrode pad) 4 Liquid resin, liquid material 11, 201 Heat block 12 > 202 Opposite to the substrate (top) 13 first flow port (suction opening) 14 second flow port (discharge opening) 15 first flow path 16 second flow path 17 first valve 18 second valve 19, 206 negative pressure source 20, 207 Pressurized source 21 Heater 22 Temperature sensor 23, 208 Temperature control unit 24 Elevating mechanism 25 Piping joint 26 Gas stream inhaled 27 Gas stream ejected 098122529 24 # # 201006568 101 102 103 104 105 106 107 Φ 108 109 110 111 112 113 114 • 115 116 118 119 120 121 122 123 Coating device discharge device XYZ drive mechanism Transport mechanism substrate heating mechanism substrate pressing member storage container nozzle ball-shaped member roller conveyor substrate transport direction drive direction left transport unit central transport unit Right side conveyor unit left auxiliary heating unit (moving inlet station) central auxiliary heating unit (medium Table) Right auxiliary heating unit (moving station) Left heating unit (foreground) Central heating unit (coating station) Right heating unit (background) 098122529 25 201006568 124 203 204 205 209 Control section flow port switching valve Gas stream 098122529