1305933 九、發明說明 【發明所屬之技術領域】 本發明係關於將處理液供應至被處理基板上而進行處 理之技術，尤其是關於以非旋轉方式將處理液塗佈於基板 上之基板處理技術。 【先前技術】 近來，於平面顯示器（FPD : Flat Panel Display )的製 程之微影製程中，做爲有利於被處理基板（例如爲玻璃基 板）的大型化之光阻劑塗佈法，下列非旋轉方式係極爲普 及，亦即一邊從長條型的光阻劑噴嘴當中以帶狀將光阻劑 吐出至基板，一邊使光阻劑噴嘴進行相對移動或掃描，藉 此可在不需進行旋轉運動下以期望的膜厚將光阻液塗佈於 基板上。 依據非旋轉方式之以往的光阻劑塗佈裝置中，例如專 利文獻1所記載般，係於水平而固定載置於承載台上之基 板與設置於承載台上方之光阻劑噴嘴的吐出口之間，設定 數百V m以下的微小間隙’一邊使光阻劑噴嘴往掃描方向 (一般爲與噴嘴的長邊方向直交之水平方向）移動，一邊 將光阻劑吐出至基板上。此類的光阻劑噴嘴係構成爲，以 橫向較長或是長條狀來形成噴嘴主體，且以帶狀從口徑極 小的細微口徑吐出口當中將光阻劑吐出。結束以此長條型 光阻劑噴嘴的掃描所進行之塗佈處理時，則藉由搬送機器 人或是搬送手臂從承載台當中將該基板取出，並搬出至裝 -4- 1305933 置外部。之後藉由搬送機器人將接下來的新的基板搬入至 裝置內，而載置於承載台上。然後藉由光阻劑噴嘴的掃描 ’對此新的基板重複進行與上述相同之塗佈處理。 [專利文獻1]日本特開平1〇_ 1 56255號公報 【發明內容】 於上述非旋轉方式之光阻劑塗佈裝置中，只要在未將 已處理完的基板從承載台當中卸載（unloading)並搬出，而 使承載台的上面成爲完全淨空狀態下，則無法將之後的新 的基板搬入至承載台上並加以載置。因此，將未處理的基 板搬入至承載台上並載入之動作的所需時間（Tin )以及 將已處理完的基板從承載台當中卸載並搬出之動作的所需 時間（Tout )，加上使光阻劑噴嘴進行掃描之動作的所需 時間（Tc )後之塗佈處理之1個循環的所需時間（ Tc + Tin + Tout )，係成爲製程時間，而存在著難以縮短製程 時間之問題。 本發明係鑑於上述之以往技術的問題點而創作出之發 明，目的在於提供一種可縮短以非旋轉方式將處理液供應 至並塗佈於被處理基板上之處理動作的製程時間之基板處 理裝置，基板處理方法及基板處理程式。 本發明之其他目的在於提供一種，於浮起搬送方式中 ，即使因基板浮起力安定用的真空壓力產生變動而使被處 理基板產生上下浮動，亦可將基板與噴嘴之間的間隙保持 在設定値，而於基板上以均勻的膜厚來形成處理液的塗佈 -5- 1305933 膜之基板處理裝置，基板處理方法及基板處理程式。 爲了達成上述目的，本發明之基板處理裝置之特徵爲 ，係具有：承載台，係具有第1浮起區域，該第丨浮起區 域，係用以噴出氣體之多數個噴出口及用以吸入氣體之多 數個吸引口混合存在而加以設置；基板搬送部，係使被處 理基板於上述承載台上浮起的狀態下，往特定的搬送方向 通過上述第1浮起區域；處理液供應部，係具有配置於上 述第1浮起區域的上方之噴嘴，並且爲了將處理液供應至 上述基板上而從上述噴嘴將上述處理液加以吐出；間隙設 定部，係用以將上述噴嘴與上述基板之間的間隙設定爲期 望之値；正壓氣體供應機構，係將正壓氣體供應至上述噴 出口；真空機構，係將真空壓力供應至上述吸引口；壓力 檢測部，係檢測出上述真空機構內的真空壓力；及噴嘴高 度位置校正部，係以於上述第1浮起區域上使上述間隙保 持在上述設定値之方式，因應藉由上述壓力檢測部所檢測 出之真空壓力的變動，而對上述噴嘴的高度位置進行可變 控制。 此外，本發明之基板處理方法之特徵爲：係於承載台 上沿著搬送方向，依序將尺寸大於被處理基板之搬入區域 、及尺寸小於上述基板之塗佈區域、及尺寸大於上述基板 之搬出區域加以設定爲一列；以設置於上述承載台的上面 之多數個噴出口所噴出之氣體的壓力而使上述基板浮起， 並至少於上述塗佈區域中，於上述承載台的上面設置有與 噴出口混合存在之多數個吸引口，並控制對於通過上述塗 -6 - 1305933 佈區域之上述基板，由上述噴出口施加之垂直朝上的壓力 ，與由上述吸引口施加之垂直朝下的壓力之間的均衡，而 賦予上述基板幾近爲一致的浮起力；將上述基板從上述搬 入區域搬送至上述搬出區域的途中，係從上述塗佈區域內 配置於上方之噴嘴當中，將處理液加以吐出而將上述處理 液塗佈於上述基板上；於塗佈處理中，係檢測出被供應至 上述吸引口之真空壓力，並以使上述噴嘴與上述基板之間 的間隙保持在設定値之方式，因應上述真空壓力的變動， 而對上述噴嘴的高度位置進行可變控制。 此外，本發明之基板處理程式係執行：於上面混合存 在有多數個噴出口及多數個吸引口而設置之承載台上，於 使被處理基板浮起於期望的高度的狀態下往特定方向搬送 之步驟；由上方的噴嘴使處理液朝向搬送中的上述基板吐 出’將處理液塗佈於上述基板上之步驟；及檢測出被供應 至上述吸引口之真空的壓力，以使上述噴嘴與上述基板之 間的間隙保持在設定値之方式，因應上述真空壓力的變動 ，而對上述噴嘴的高度位置進行可變控制之步驟。 於本發明當中，於基板通過承載台的第1浮起區域（ 塗佈區域）之途中，係接受從噴嘴所吐出的處理液之供應 ’藉此於基板上形成處理液的塗佈膜。於此塗佈處理中， 爲了使基板浮起力以高精確度達到穩定，而被供給至承載 台上面的吸引口上之真空的壓力（真空）產生變動時，則 對於基板之從承載台側之垂直朝上的壓力與垂直朝下的壓 力之間的均衡被破壞，使基板產生上下浮動。根據本發明 1305933 ，係以與因真空的壓力之變動而使基板產生上下浮動者爲 相同的時機，使噴嘴亦同樣進行上下浮動’因此可將基板 與噴嘴之間的間隙，穩定地保持在設定値，而於基板上形 成無塗佈不均之一定膜厚的光阻劑塗佈膜。此外’可獨立 或是並列進行包夾第1浮起區域而於下游側（搬出區域） 中將已處理完的基板搬出至承載台外之動作，以及於上游 側（搬入區域）中將下一個進行處理之新的基板搬入至承 載台上之動作，因此可縮短製程時間。 根據本發明之較佳型態，噴嘴高度位置校正部係具有 :噴嘴支持部，係於鉛直方向上可動地支持噴嘴；壓電促 動器，係爲了使噴嘴於鉛直方向上在特定的範圍內僅移位 期望的位移量，而組裝於噴嘴支持部；及噴嘴位移控制部 ，係以因應從壓力檢測部所輸出的壓力檢測信號之控制信 號，驅動壓電促動器。於該構成中，利用將控制信號施加 至組裝於噴嘴支持部之壓電促動器中，可透過噴嘴支持部 ，將藉由反壓電效果而壓電促動器產生之位移，有效率地 傳達至噴嘴。 此外，根據本發明之較佳型態，噴嘴位移控制部係具 有：第1濾波器，係爲了產生上述控制信號而從壓力檢測 信號抽出交流成分；及/或第2濾波器，係從該壓力檢測 信號的交流成分去除特定頻率數以上的高頻成分；及/或 延遲電路，係使該壓力檢測信號的交流成分僅延遲特定時 間或是相位之延遲電路；及/或放大電路，係以特定增益 來放大該壓力檢測信號的交流成分。於該構成中，係以使 1305933 對真空壓力變動之噴嘴的位移就時間上與位移量上均與基 板的位移爲一致或是近似之方式，來設定或是調整濾波器 特性、延遲特性、及增益特性亦可。 此外，根據本發明之較佳型態，噴嘴可具有：細微口 徑的吐出口，係延伸於與搬送方向交叉（例如爲直交）之 水平方向上；間隙設定部可具有：噴嘴升降部，係使噴嘴 進行升降移動。 此外，較理想爲具有漂浮控制部之構成，該漂浮控制 部係用以控制對於通過第1浮起區域之基板，而由上述噴 出口施加之垂直朝上的壓力，與由吸引口施加之垂直朝下 的壓力之間的均衡。 此外，根據本發明之較佳型態，係設置有於承載台的 搬送方向上使基板浮起於第1浮起區域的上游側之第2浮 起區域’並於第2浮起區域內，設置有用以搬入基板之搬 入部。此搬入部較理想爲具有：複數根的第1頂升銷，係 於承載台上的搬入位置上，用以利用頂升銷的前端來支持 基板；及第1頂升銷升降部，係使第1頂升銷於承載台下 方的原先位置與承載台上方的往動位置之間進行昇降移動 〇 此外’根據本發明之較佳型態，係設置有於承載台的 搬送方向上使基板浮起於第1浮起區域的下游側之第3浮 起區域，於此第3浮起區域內設置有用以搬出基板之搬出 部。此搬出部較理想爲具有：複數根的第2頂升銷，係於 承載台上的搬入位置上，用以利用頂升銷的前端來支持基 1305933 板；及第2頂升銷升降部，係使第2頂升銷於承載台下方 的原先位置與承載台上方的往動位置之間進行昇降移動。 此外，根據本發明之較佳型態，係設置有於承載台的 搬送方向上於第2區域與第1區域之間使基板浮起之第4 浮起區域，並於此第4浮起區域內，以朝向搬送方向爲逐 漸增大之密度而配置有多數個用以吸入氣體之吸引口。根 據此構成，可於第2區域（搬入區域）與第1區域（塗佈 區域）之間平順地改變基板浮起高度。此外，係設置有於 承載台的搬送方向上於第1區域（塗佈區域）與第3區域 (搬出區域）之間使基板浮起之第5浮起區域，並於此第 5浮起區域內，以朝向搬送方向爲逐漸減少之密度而配置 有多數個用以吸入氣體之吸引口。根據此構成，可於第1 區域（塗佈區域）與第3區域（搬出區域）之間平順的改 變基板浮起高度。 此外’根據本發明之較佳型態，基板搬送部係具有： 引導軌，係以與基板的移動方向爲平行延伸之方式配置於 承載台的單側或兩側上；滑動器，係可沿著引導軌而移動 ;搬送驅動部，係以沿著引導軌移動之方式驅動滑動器； 及保持部’係從滑動器朝向承載台的中心部延伸存在，並 以可裝卸地保持基板的側緣部。 發明之效果： 根據本發明之基板處理裝置、基板處理方法或是基板 處理程式，藉由上述般之構成及作用，不僅可縮短以非旋 -10- 1305933 轉方式將處理液供應至被處理基板上之處理動作的製程時 間，並且於浮起搬送方式中，即使因基板浮起力安定用的 真空壓力產生變動而使基板產生上下浮動，亦可將基板與 噴嘴之間的間隙保持在設定値，而於基板上以均勻的膜厚 形成處理液的塗佈膜。 【實施方式】 以下係參照附加圖式來說明本發明之較佳的實施型態 〇 第1圖係揭示本發明的基板處理裝置，基板處理方法 及基板處理程式之可適用的構成例之塗佈顯像處理系統。 此塗佈顯像處理系統係設置於無塵室內，並例如以LCD基 板爲被處理基板，而於LCD製程中進行微影製程中的洗淨 、光阻劑塗佈、預烘焙、顯像及後烘焙之各項處理者。曝 光處理係藉由與此系統鄰接而設置之外部的曝光裝置（圖 中未顯示）所進行。 此塗佈顯像處理系統大致上可分爲匣站（cassette station) ( C/S) 10，製程站（process station) ( P/S) 12，及 介面部（I/F) 14而構成。 系統的一端部上所設置之匣站（C/S ) 1 0係具備，可 載置用以收容多數的基板G之基板匣C至特定數目、例如 爲4個爲止之基板匣承載台16，及設置於此基板匣承載台 1 6上的側邊且與基板匣C的排列方向爲平行而設置之搬 送路徑17’及以可於此搬送路徑17上自由移動般而對基 -11 - 1305933 板匣承載台16上的基板匣C進行基板G的搬入搬出之搬 送機構20。此搬送機構20係具有可保持基板G之手段， 例如爲搬送手臂，可於χ、Υ、Ζ、0之4軸上動作，並且 可進行之後所述之製程站（P/S ) 1 2側之搬送裝置3 8與基 板G的交運。 製程站（P/S ) 12係從上述匣站（C/S ) 1 0側開始，透 過（包夾）基板中繼部23、藥液供應單元25及空間27, 依序以橫向而呈一列般設置洗淨製程部22、塗佈製程部 24及顯像製程部26。 洗淨製程部22係包含2個洗滌洗淨單元（SCR) 28， 及上下2段的紫外線照射/冷卻單元（UV/COL) 30，加熱 單兀（HP) 32，及冷卻單元（COL) 34。 塗佈製程部2 4係包含非旋轉方式的光阻劑塗佈單元 (CT ) 40 ’及減壓乾燥單元（VD ) 42，及上下2段型的黏 著/冷卻單元（AD/COL ) 46，及上下2段型的加熱/冷卻單 元（HP/COL) 48，及加熱單元（HP) 50。 顯像製程部26係包含3個顯像單元（DEV ) 52，及2 個上下2段型的加熱/冷卻單元（ΗΡ/COL ) 53，及加熱單 元（HP ) 55。 於各個製程部22、24、26的中央部上，於長邊方向 上設置有搬送路徑36、51、58，搬送裝置38、54、60係 各自沿著搬送路徑36、5 1、58移動而進入各個製程部的 各個單元，以進行基板G的搬入/搬出或是搬送。於此系 統中’於各個製程部22、24、26中，係於搬送路徑36、 -12- 1305933 51、58之一邊的側上配置液體處理系的單元（SCR、CT、 DEV等），於另一邊的側上配置熱處理系的單元（HP、 COL 等） 系統的另一端上所設置之介面部（I/F ) 1 4，係於與製 程站（P/S ) 1 2鄰接之一側上設置延伸部（基板交運部， extension ) 56及緩衝承載台57，於與曝光裝置鄰接之一 側上設置搬送機構59。此搬送機構59可於Y方向所延伸 存在之搬送路徑1 9上自由移動，而對緩衝承載台5 7進行 基板G的搬入搬出，此外並且可與延伸部（基板交運部） 56及旁邊的曝光裝置進行基板G的交運。 第2圖係顯示此塗佈顯像處理系統的處理步驟。首先 於匣站（C/S) 10當中，搬送機構20從承載台16上的特 定基板匣C當中取出1片基板G，並搬送至製程站（P/S )1 2之洗淨製程部22的搬送裝置3 8 (步驟S 1 )。 於洗淨製程部22中，基板G首先被依序搬入至紫外 線照射/冷卻單元（UV/C0L ) 30，於最初的紫外線照射單 元（UV )中係藉由紫外線而進行乾式洗淨，接下來於冷卻 單元（C0L)中冷卻至特定溫度（步驟S2)。於此紫外線 洗淨中，主要爲去除基板表面的有機物。 接下來，基板G係於洗滌洗淨單元（SCR ) 28當中之 一接受洗滌洗淨處理，從基板表面當中去除粒子狀的污垢 (步驟S3 )。於洗滌洗淨之後，基板G係於加熱單元（ HP ) 32當中接受加熱所致之脫水處理（步驟S4 )，接下 來於冷卻單元（C0L ) 34當中冷卻至一定的基板溫度爲止 -13- 1305933 (步驟S5 )。在此係結束洗淨製程部22之前處理’之後 基板G係藉由搬送裝置38，透過基板交運部23而往塗佈 製程部24搬送。 於塗佈製程部24中，基板G首先被依序搬入黏著/冷 卻單元（AD/COL) 46，最初於黏著單元（AD)中接受疏 水化處理（HMDS )(步驟 S6 )，接下來於冷卻單元（ COL )當中冷卻至一定的基板溫度爲止（步驟S7 )。 之後，於光阻劑塗佈單元（CT ) 40中藉由非旋轉方 式來塗佈光阻劑，接下來於減壓乾燥單元（VD) 42中進 行依據減壓之乾燥處理（步驟S 8 )。 接下來，基板 G被依序搬入至加熱/冷卻單元（ ΗΡ/COL ) 48，最初於加熱單元（HP )中進行塗佈後的烘 焙（預烘焙）（步驟S9)，接下來於冷卻單元（COL)當 中冷卻至一定的基板溫度爲止（步驟S10)。亦可於此塗 佈後的烘焙中採用加熱單元（HP ) 50。 於上述塗佈處理之後，基板G係藉由塗佈製程部24 的搬送裝置54及顯像製程部26的搬送裝置60而被搬送 至介面部（I/F) 14，從該處被傳送至曝光裝置（步驟S11 )。於曝光裝置中使基板G上的光阻劑曝光爲特定的電路 圖案。之後，結束圖案曝光的基板G，從曝光裝置中被送 回介面部（I/F) 14。介面部（I/F) 14的搬送機構59，係 透過延伸部56將從曝光裝置所送來之基板G，傳送至製 程站（P/S ) 1 2的顯像製程部26。 於顯像製程部26中’基板G係於顯像單元（DEV ) -14- 1305933 52當中之一接受顯像處理（步驟S12)，接下來依序被搬 入至加熱/冷卻單元（HP/COL) 53當中之一，最初於加熱 單元（HP)中進行後烘焙（步驟S13)，接下來於冷卻單 元（COL )當中冷卻至一定的基板溫度爲止（步驟S14) 。亦可於此後烘焙中採用加熱單元（HP ) 55。 於顯像製程部26中結束一連串的處理之基板G，係 藉由製程站（P/S) 12內的搬送裝置60、54、38而被送回 匣站（C/S ) 10，於匣站（C/S ) 10中係藉由搬送機構20 而被收容於當中之一的基板匣C中（步驟S1)。 於此塗佈顯像處理系統中，例如可適用本發明於例如 塗佈製程部24的光阻劑塗佈單元（CT ) 40中。以下係參 照第3圖~第19圖，說明將本發明適用於光阻劑塗佈單元 (CT) 40之一項實施型態。 第3圖係揭示本實施型態之光阻劑塗佈單元（CT ) 40 及減壓乾燥單元（VD ) 42的整體構成。 如第3圖所示般，於支持台或是支持架70上，以於 X方向呈橫向一列般而配置光阻劑塗佈單元（CT ) 40及減 壓乾燥單元（VD) 42。應予進行塗佈處理之新的基板G， 係藉由搬送路徑5 1側的搬送裝置54 (第1圖），如箭頭 Fa所示般之被搬入至光阻劑塗佈單元（CT ) 40。於光阻劑 塗佈單元（CT) 40中完成塗佈處理之基板G，係藉由以支 持台70的引導軌72所導引之可於X方向移動的搬送手臂 74，如箭頭Fb所示般之被搬入至減壓乾燥單元（VD) 42 。於減壓乾燥單元（VD ) 42中完成乾燥處理之基板G， -15- 1305933 係藉由搬送路徑51側的搬送裝置54(第1圖），如箭頭 Fc所示般之被拉取。 光阻劑塗佈單元（CT ) 40係構成爲，具有往X方向 延伸較長之承載台76，於此承載台76上一邊以於平面流 動般往同方向搬送，一邊從承載台76上方所配置之長條 型的光阻劑噴嘴7 8當中將光阻劑供應至基板G上，並藉 由非旋轉方式’於基板上面（被處理面）上形成一定膜厚 _ 的光阻劑塗佈膜。光阻劑塗佈單元（C T ) 4內的各部分構 成及作用將於之後詳述。 減壓乾燥單元（VD ) 42係具備，上面具有開口之托 盤或是底部較淺的容器型之下部處理室80，以及可達到氣 密般之密接於或是可嵌合於此下部處理室80的上面而構 成之蓋狀的上部處理室（圖中未顯示）。下部處理室80 幾乎呈四角形，於中心部上配設有用以水平載置基板G而 支持之承載台82，於底面的四個角落上設置有排氣口 83 丨 。各個排氣口 83係經過排氣管而與真空泵（圖中未顯示 )相通。於將上部處理室覆蓋下部處理室80之狀態下， 可藉由該真空泵，使兩個處理室內所密閉之處理空間減壓 至特定的真空度爲止。 第4圖及第5圖係揭示本發明的一項實施型態之光阻 劑塗佈單元（CT) 40內之更爲詳細的整體構成。 於本實施型態之光阻劑塗佈單元（CT) 40中，承載 台76並非具有如以往般之用以固定載置基板g之載置台 的功能，而是具有以空氣壓力使基板G於空中浮起之基板 -16- 1305933BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for processing a processing liquid onto a substrate to be processed, and more particularly to a substrate processing technique for applying a processing liquid onto a substrate in a non-rotating manner. . [Prior Art] Recently, in the lithography process of a flat panel display (FPD) process, as a photoresist coating method which is advantageous for the processing of a substrate to be processed (for example, a glass substrate), the following non- The rotation method is extremely popular, that is, the photoresist nozzle is relatively moved or scanned while stripping the photoresist from the strip-shaped photoresist nozzle to the substrate, thereby eliminating the need for rotation. The photoresist is applied to the substrate at a desired film thickness under motion. In the conventional photoresist coating apparatus according to the non-rotation type, for example, as described in Patent Document 1, the substrate placed on the stage and the discharge port of the photoresist nozzle provided above the stage are fixed horizontally. A small gap of several hundred V m or less is set between the photoresist nozzles in the scanning direction (generally in the horizontal direction orthogonal to the longitudinal direction of the nozzle), and the photoresist is discharged onto the substrate. Such a photoresist nozzle is configured such that the nozzle body is formed in a laterally long or elongated shape, and the photoresist is discharged in a strip shape from a fine-diameter discharge port having a very small diameter. When the coating process by the scanning of the long-type resist nozzle is completed, the substrate is taken out from the stage by the transport robot or the transfer arm, and carried out to the outside of the -4-1305933. Thereafter, the next new substrate is carried into the apparatus by the transfer robot, and placed on the stage. The same coating process as described above is then repeated for this new substrate by scanning of the photoresist nozzle. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei. No. 1 56255. SUMMARY OF THE INVENTION In the above-described non-rotating photoresist coating apparatus, as long as the processed substrate is not unloaded from the stage When the upper surface of the stage is completely cleaned, the subsequent new substrate cannot be carried onto the stage and placed. Therefore, the required time (Tin) of the operation of loading the unprocessed substrate onto the stage and loading it, and the time required to unload and carry out the processed substrate from the stage are added (Tout). The required time (Tc + Tin + Tout ) of one cycle of the coating process after the required time (Tc) of scanning the photoresist nozzle is a process time, and it is difficult to shorten the process time. problem. The present invention has been made in view of the above problems of the prior art, and an object of the invention is to provide a substrate processing apparatus capable of shortening a processing time of a processing operation of supplying a processing liquid to a substrate to be processed in a non-rotating manner and applying it to a substrate to be processed. , substrate processing method and substrate processing program. Another object of the present invention is to provide a method in which the gap between the substrate and the nozzle can be maintained even if the substrate to be processed floats up and down due to fluctuations in the vacuum pressure for the substrate floating force stabilization in the floating transport method. A substrate processing apparatus, a substrate processing method, and a substrate processing program for applying a coating liquid of a coating liquid of a processing liquid to a uniform thickness on a substrate. In order to achieve the above object, a substrate processing apparatus according to the present invention includes a stage having a first floating area for discharging a plurality of gas outlets and for inhaling a plurality of suction ports of the gas are mixed and provided, and the substrate transfer unit passes through the first floating region in a specific conveyance direction while the substrate to be processed is floated on the stage; the processing liquid supply unit is a nozzle disposed above the first floating region, and discharging the processing liquid from the nozzle to supply the processing liquid to the substrate; and a gap setting portion for connecting the nozzle to the substrate The gap is set to a desired pressure; the positive pressure gas supply mechanism supplies positive pressure gas to the discharge port; the vacuum mechanism supplies vacuum pressure to the suction port; and the pressure detecting portion detects the vacuum mechanism a vacuum pressure; and a nozzle height position correcting unit for maintaining the gap in the first floating area Type, in response to the change of vacuum pressure by said pressure detecting section detects, while the height position of the nozzle is variably controlled. In addition, the substrate processing method of the present invention is characterized in that, according to the transport direction, the loading area is larger than the loading area of the substrate to be processed, and the coating area smaller than the substrate, and the size is larger than the substrate. The carry-out areas are set in a row; the substrate is floated by the pressure of the gas ejected from the plurality of discharge ports provided on the upper surface of the stage, and at least the coating area is provided on the upper surface of the stage a plurality of suction ports mixed with the discharge port, and controlling a vertical upward pressure applied by the discharge port to the substrate passing through the coated area of the -6 - 1305933, and a vertical downward direction applied by the suction port A balance between the pressures is applied to the substrate to provide a similar floating force; and the substrate is transported from the loading region to the carry-out region, and is disposed in the upper nozzle from the coating region to be processed. The liquid is discharged and the above treatment liquid is applied onto the substrate; in the coating treatment, it is detected that it is supplied to the upper surface. Suction port of the vacuum pressure, and so that a gap between the nozzle and the substrate is maintained at the set Zhi embodiment, the vacuum pressure in response to variation of the height position of the nozzle is variably controlled. Further, the substrate processing program of the present invention is configured to carry a plurality of ejection ports and a plurality of suction ports on the mounting table, and to transport the substrate to be processed at a desired height in a specific direction. a step of discharging the processing liquid toward the substrate in the transfer by the upper nozzle, a step of applying the processing liquid onto the substrate, and detecting a pressure of the vacuum supplied to the suction port to make the nozzle and the nozzle The gap between the substrates is maintained at a setting 値, and the height position of the nozzle is variably controlled in response to the fluctuation of the vacuum pressure. In the present invention, the coating film of the processing liquid is formed on the substrate by receiving the supply of the processing liquid discharged from the nozzle while the substrate passes through the first floating region (application region) of the stage. In this coating process, in order to stabilize the substrate floating force with high accuracy and the pressure (vacuum) of the vacuum supplied to the suction port on the upper surface of the stage varies, the substrate is supported from the stage side. The balance between the vertically upward pressure and the vertically downward pressure is broken, causing the substrate to float up and down. According to the invention of 1,059,233, the nozzle is also floated up and down in the same manner as when the substrate is caused to float up and down due to the pressure fluctuation of the vacuum. Therefore, the gap between the substrate and the nozzle can be stably maintained in the setting. Further, a photoresist coating film having a certain film thickness without coating unevenness is formed on the substrate. In addition, the operation of carrying out the processed substrate on the downstream side (the carry-out area) and the next on the upstream side (the carry-in area) can be performed independently or in parallel. The processing of the new substrate to be processed onto the stage is shortened, so that the process time can be shortened. According to a preferred embodiment of the present invention, the nozzle height position correcting portion has a nozzle supporting portion that movably supports the nozzle in a vertical direction, and a piezoelectric actuator that allows the nozzle to be in a specific range in a vertical direction. The nozzle support unit is assembled only by shifting the desired displacement amount, and the nozzle displacement control unit drives the piezoelectric actuator in response to a control signal of the pressure detection signal output from the pressure detecting unit. In this configuration, by applying a control signal to the piezoelectric actuator incorporated in the nozzle support portion, the nozzle support portion can be transmitted, and the displacement generated by the piezoelectric actuator by the counter piezoelectric effect can be efficiently Communicate to the nozzle. Further, according to a preferred aspect of the present invention, the nozzle displacement control unit includes: a first filter that extracts an alternating current component from the pressure detection signal in order to generate the control signal; and/or a second filter from which the pressure is applied The AC component of the detection signal removes a high frequency component of a specific frequency or more; and/or the delay circuit is a delay circuit that delays the AC component of the pressure detection signal only by a specific time or phase; and/or the amplification circuit is specific Gain to amplify the AC component of the pressure detection signal. In this configuration, the filter characteristics, the delay characteristics, and the displacement of the nozzles in which the pressure fluctuation of the 1305933 is adjusted in accordance with the displacement of the substrate in time and displacement are set or approximated. Gain characteristics are also available. Further, according to a preferred embodiment of the present invention, the nozzle may have a fine-diameter discharge port extending in a horizontal direction intersecting with the conveyance direction (for example, orthogonal); and the gap setting portion may have a nozzle lifting portion, The nozzle moves up and down. Further, it is preferable to have a configuration in which a floating control portion for controlling a vertical upward pressure applied by the discharge port to a substrate passing through the first floating region, and a vertical direction applied by the suction port The balance between the downward pressures. Further, according to a preferred aspect of the present invention, the second floating region ′ on the upstream side of the first floating region is suspended in the transport direction of the stage, and is disposed in the second floating region. A loading portion for carrying in the substrate is provided. Preferably, the loading portion has a plurality of first lifting pins attached to the loading position on the carrying table for supporting the substrate by the front end of the lifting pin; and the first lifting pin lifting portion The first lifting pin is moved up and down between the original position below the carrying platform and the moving position above the carrying platform. Further, according to a preferred embodiment of the present invention, the substrate is floated in the conveying direction of the carrying platform. The third floating region on the downstream side of the first floating region is provided with a carry-out portion for carrying out the substrate in the third floating region. Preferably, the carrying portion has a plurality of second jacking pins attached to the loading position on the carrying platform for supporting the base 1305933 plate by the front end of the jacking pin; and the second jacking pin lifting portion, The second lifting pin is moved up and down between the original position below the carrying platform and the moving position above the carrying platform. Further, according to a preferred aspect of the present invention, the fourth floating region in which the substrate is floated between the second region and the first region in the transport direction of the stage is provided, and the fourth floating region is provided in the fourth floating region. In the inside, a plurality of suction ports for sucking in gas are disposed at a density that gradually increases toward the conveyance direction. According to this configuration, the substrate floating height can be smoothly changed between the second region (loading region) and the first region (coating region). Further, a fifth floating region in which the substrate is floated between the first region (application region) and the third region (loading region) in the transport direction of the stage is provided, and the fifth floating region is provided in the fifth floating region. In the inside, a plurality of suction ports for taking in the gas are disposed at a density which is gradually reduced toward the conveyance direction. According to this configuration, the substrate floating height can be smoothly changed between the first region (coating region) and the third region (loading region). In addition, according to a preferred embodiment of the present invention, the substrate transfer portion has: a guide rail disposed on one side or both sides of the stage so as to extend in parallel with the moving direction of the substrate; the slider can be along The guide rail is moved; the transport drive unit drives the slider in a manner to move along the guide rail; and the retaining portion extends from the slider toward the center of the stage, and detachably holds the side edge of the substrate unit. Advantageous Effects of Invention According to the substrate processing apparatus, the substrate processing method, or the substrate processing program of the present invention, it is possible to shorten the supply of the processing liquid to the substrate to be processed by the non-rotating -10-1305933 rotation method by the above-described configuration and action. In the floating conveyance method, even if the vacuum pressure for the substrate floating force is changed and the substrate is floated up and down, the gap between the substrate and the nozzle can be kept set. On the substrate, a coating film of the treatment liquid was formed in a uniform film thickness. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a view showing the application of a substrate processing apparatus, a substrate processing method, and a substrate processing program. Imaging processing system. The coating development processing system is disposed in a clean room, and for example, the LCD substrate is used as a substrate to be processed, and in the LCD process, cleaning, photoresist coating, prebaking, and development are performed in a lithography process. Post-baking handlers. The exposure treatment is performed by an external exposure device (not shown) provided adjacent to the system. This coating development processing system can be roughly classified into a cassette station (C/S) 10, a process station (P/S) 12, and an interfacial (I/F) 14. The station (C/S) 10 provided on one end of the system is provided with a substrate 匣C for accommodating a plurality of substrates G to a specific number, for example, four substrates. And a transport path 17' provided on the side of the substrate/mounting platform 16 and arranged in parallel with the direction in which the substrate 匣C is arranged, and being freely movable on the transport path 17 to the base -11 - 1305933 The substrate 匣C on the stacker stage 16 carries out the transport mechanism 20 for loading and unloading the substrate G. The transport mechanism 20 has means for holding the substrate G, for example, a transfer arm, and is operable on four axes of χ, Υ, Ζ, and 0, and can perform a process station (P/S) 1 2 side described later. The transport device 38 is transported to the substrate G. The processing station (P/S) 12 is configured to pass through (clip) the substrate relay unit 23, the chemical supply unit 25, and the space 27 from the side of the above-mentioned station (C/S) 10, and sequentially present in a row in the horizontal direction. The cleaning process unit 22, the coating process unit 24, and the development process unit 26 are generally provided. The cleaning process unit 22 includes two washing and cleaning units (SCR) 28, and two upper and lower ultraviolet irradiation/cooling units (UV/COL) 30, a heating unit (HP) 32, and a cooling unit (COL) 34. . The coating process unit 24 includes a non-rotating photoresist coating unit (CT) 40' and a reduced pressure drying unit (VD) 42, and an upper and lower two-stage adhesion/cooling unit (AD/COL) 46, And the upper and lower 2-stage heating/cooling unit (HP/COL) 48, and the heating unit (HP) 50. The developing process unit 26 includes three developing units (DEV) 52, and two upper and lower two-stage heating/cooling units (ΗΡ/COL) 53, and a heating unit (HP) 55. In the central portion of each of the processing units 22, 24, and 26, transport paths 36, 51, and 58 are provided in the longitudinal direction, and the transport devices 38, 54, and 60 are moved along the transport paths 36, 51, and 58, respectively. Each unit of each processing unit is moved to carry in/out or transport the substrate G. In this system, in each of the processing units 22, 24, and 26, liquid processing units (SCR, CT, DEV, etc.) are disposed on one side of the transport path 36, -12-1305933 51, and 58. On the other side, the heat treatment system unit (HP, COL, etc.) is placed on the other end of the system, and the interface (I/F) 14 is placed on the side adjacent to the process station (P/S) 1 2 The extension portion (the substrate transport portion, extension) 56 and the buffer stage 57 are provided, and a transport mechanism 59 is provided on one side adjacent to the exposure device. The transport mechanism 59 is freely movable on the transport path 19 extending in the Y direction, and carries on and off the substrate G to the buffer stage 57, and can be exposed to the extension portion (substrate transport portion) 56 and the side. The device carries the delivery of the substrate G. Figure 2 shows the processing steps of this coating development processing system. First, in the station (C/S) 10, the transport mechanism 20 takes out one substrate G from the specific substrate 匣C on the stage 16, and transports it to the cleaning process unit 22 of the process station (P/S) 1 2 . The transport device 3 8 (step S 1 ). In the cleaning process unit 22, the substrate G is first sequentially carried into the ultraviolet irradiation/cooling unit (UV/COL) 30, and is dry-cleaned by ultraviolet rays in the first ultraviolet irradiation unit (UV). It is cooled to a specific temperature in the cooling unit (C0L) (step S2). In this ultraviolet cleaning, the organic matter on the surface of the substrate is mainly removed. Next, the substrate G is subjected to a washing and washing treatment in one of the washing and cleaning units (SCR) 28 to remove particulate dirt from the surface of the substrate (step S3). After the washing and washing, the substrate G is subjected to a dehydration treatment by heating in the heating unit (HP) 32 (step S4), and then cooled to a certain substrate temperature in the cooling unit (C0L) 34-13 - 1305933 (Step S5). In this case, the substrate G is transported to the coating process unit 24 through the substrate transport unit 23 by the transfer device 38 after the process is completed. In the coating process unit 24, the substrate G is first sequentially loaded into the adhesion/cooling unit (AD/COL) 46, and initially subjected to hydrophobic treatment (HMDS) in the adhesive unit (AD) (step S6), followed by cooling. The cell (COL) is cooled to a constant substrate temperature (step S7). Thereafter, the photoresist is applied by a non-rotation method in the photoresist coating unit (CT) 40, and then dried in accordance with the reduced pressure in the vacuum drying unit (VD) 42 (step S8) . Next, the substrate G is sequentially carried into the heating/cooling unit (ΗΡ/COL) 48, and the baking (prebaking) after coating is first performed in the heating unit (HP) (step S9), followed by the cooling unit ( COL) is cooled to a constant substrate temperature (step S10). A heating unit (HP) 50 may also be employed in the baking after the coating. After the coating process, the substrate G is transported to the interface (I/F) 14 by the transfer device 54 of the coating process unit 24 and the transfer device 60 of the developing process unit 26, and is transferred from there to The exposure device (step S11). The photoresist on the substrate G is exposed to a specific circuit pattern in the exposure apparatus. Thereafter, the substrate G on which the pattern exposure is completed is returned to the dielectric surface (I/F) 14 from the exposure device. The transport mechanism 59 of the interfacial portion (I/F) 14 is transported to the developing process portion 26 of the process station (P/S) 1 through the extension portion 56 via the substrate G sent from the exposure device. In the developing process portion 26, the substrate G is subjected to development processing in one of the developing units (DEV) -14 - 1305933 52 (step S12), and then sequentially carried into the heating/cooling unit (HP/COL). One of the 53 is initially post-baked in a heating unit (HP) (step S13), and then cooled to a constant substrate temperature in the cooling unit (COL) (step S14). A heating unit (HP) 55 may also be employed in this post-baking. The substrate G that has completed a series of processes in the developing process unit 26 is sent back to the station (C/S) 10 by the transfer devices 60, 54, and 38 in the process station (P/S) 12. The station (C/S) 10 is housed in one of the substrates 匣C by the transport mechanism 20 (step S1). In the coating development processing system, for example, the present invention can be applied to, for example, a photoresist coating unit (CT) 40 of the coating process portion 24. The following is a description of an embodiment in which the present invention is applied to a photoresist coating unit (CT) 40, with reference to Figs. 3 to 19 . Fig. 3 is a view showing the overall configuration of a photoresist coating unit (CT) 40 and a reduced-pressure drying unit (VD) 42 of the present embodiment. As shown in Fig. 3, a photoresist coating unit (CT) 40 and a decompression drying unit (VD) 42 are disposed on the support table or the support frame 70 in a horizontal direction in the X direction. The new substrate G to be subjected to the coating treatment is carried into the photoresist coating unit (CT) 40 by the transfer device 54 (Fig. 1) on the transport path 51 side as indicated by the arrow Fa. . The substrate G subjected to the coating treatment in the photoresist coating unit (CT) 40 is carried by the transfer arm 74 guided by the guide rail 72 of the support table 70 in the X direction as indicated by an arrow Fb. It is moved into the vacuum drying unit (VD) 42 as usual. The substrate G which has been subjected to the drying treatment in the vacuum drying unit (VD) 42 is taken up by the conveying means 54 (Fig. 1) on the side of the conveying path 51 as indicated by the arrow Fc. The photoresist coating unit (CT) 40 is configured to have a carrier 76 that extends long in the X direction, and the carrier 76 is transported in the same direction while flowing in a plane, and is placed above the carrier 76. The photoresist of the long strip type photoresist nozzles 7 is supplied to the substrate G, and is coated with a photoresist having a certain film thickness on the substrate (the surface to be processed) in a non-rotating manner. membrane. The constitution and function of each part in the photoresist coating unit (C T ) 4 will be described in detail later. The reduced-pressure drying unit (VD) 42 is provided with a tray having an opening on the upper surface or a container-type lower processing chamber 80 having a shallower bottom portion, and can be airtightly attached or can be fitted to the lower processing chamber 80. The upper processing chamber (not shown) formed by the upper surface of the lid. The lower processing chamber 80 has a substantially quadrangular shape, and a support base 82 for supporting the substrate G to be horizontally placed is disposed on the center portion, and an exhaust port 83 设置 is provided at four corners of the bottom surface. Each of the exhaust ports 83 communicates with a vacuum pump (not shown) through an exhaust pipe. In the state where the upper processing chamber is covered by the lower processing chamber 80, the processing space sealed in the two processing chambers can be depressurized to a specific degree of vacuum by the vacuum pump. Fig. 4 and Fig. 5 show a more detailed overall configuration of a photoresist coating unit (CT) 40 according to an embodiment of the present invention. In the photoresist coating unit (CT) 40 of the present embodiment, the carrier 76 does not have the function of fixing the mounting table on which the substrate g is placed as in the prior art, but has the substrate G under air pressure. Floating substrate in the air-16 - 1305933
浮起台之功能。此外，配置於承載台76的兩邊之直向前 進運動型的基板搬送部84’係各自以可自由裝脫般保持基 板G的兩側邊緣部，而將基板G往承載台的長邊方向（X 方向）搬送。 詳細而言，承載台7 6係於該長邊方向（X方向）中 ，被分割爲5個區域、M2、M3、、M5 (第5圖）。 左端的區域Μ1爲搬入區域，應予進行塗佈處理之新的基 板G，係被搬送至此區域Mi內的特定位置。於此搬入區 域【中，爲了從搬送裝置54的搬送手臂（第1圖）當中 接收基板G並載入於承載台76上，係於承載台下方的原 先位置與承載台上方的往動位置之間，以特定的間隔而設 置可進行昇降移動之多數根（例如4根）的頂升銷86。這 些頂升銷8 6係藉由例如以氣缸（圖中未揭示）爲驅動源 之搬入用頂升銷升降部8 5來進行升降驅動。 此搬入區域Μ!爲開始浮起式基板搬送之區域，於此 區域內的承載台上面’係以一定的密度而設置有多數之用 以使基板G浮起至期望的浮起高度位置或是浮起高度Ha 之噴出高壓或正壓的壓縮空氣之噴出口 88。在此，於搬入 區域W中從承載台76的上面所觀看之基板G的浮起高度 Ha ’並不需具有高精密度，只要保持在例如爲 100~150 /z m的範圍內即可。此外，於搬送方向（X方向） 中’搬入區域Μι的大小超過基板g的大小爲佳。此外， 於搬入區域虬中亦設置有用以使基板g於承載台76上進 行對位之校準部（圖中未顯示）。 -17- 1305933 於承載台7 6的中心部上所設定之區域Μ 3，爲光阻劑 供應區域或是塗佈區域，基板G於通過此區域Μ3時，係 於特定的位置上從上方的光阻劑噴嘴78接受光阻劑R的 供應。於此塗佈區域Μ3之承載台76的上面，例如以第6 圖所示之排列或是分布圖案，以一定的密度混合存在而設 置有多數之用以使基板G浮起至浮起高度Hb之噴出高壓 或正壓的壓縮空氣之噴出口 88，以及以負壓將空氣吸入之 吸引口 90。 在此，使正壓的噴出口 88及負壓的吸引口 90混合存 在者，是爲了以較高的精準度將浮起高度Hb保持在設定 値之故。亦即，塗佈區域M3之浮起高度Hb係規定噴嘴下 端（吐出口）與基板上面（被處理面）之間的間隙S (例 如爲1 00 // m )。此間隙S爲左右光阻劑塗佈膜及光阻劑 消耗量之重要參數，必須以高精準度而維持於一定。於此 實施型態中，係對於通過基板G的區域M3之部分，從噴 出口 8 8施加壓縮空氣所致之垂直朝上的力之同時，從吸 引口 9 0施加負壓吸引力所致之垂直朝下的力，並控制兩 方向所合成之壓力的均衡，藉此可將塗佈用的浮起高度 Hb保持在設定値（50 /z m )。爲了進行此浮起高度控制， 亦可設置有包含用以檢測出基板G的高度位置之高度檢測 感測器（圖中未顯示）等之回饋控制機構。再者，搬送方 向（X方向）之搬入區域的大小，只需具有可於光阻 劑噴嘴78的正下方安定的形成上述之狹窄的間隙S之裕 度即可’一般爲較基板G的大小孩小，例如可爲1 /3〜1 /4 -18- 1305933 於搬入區域Μ!及塗佈區域Mb之間所設定之中間的區 域M2，係於搬送中使基板G的浮起高度位置，從搬入區 域的浮起高度Ha ( 100〜150 # m )變化或轉移至塗佈區 域M3的浮起高度Hb(50ym)之轉移區域。於此轉移區 域M2內，亦於承載台76的上面使噴出口 88及吸引口 90 混合存在而設置。但是，設置爲沿著搬送方向逐漸增加吸 引口 90的密度，並藉此而於搬送中使基板G的浮起高度 逐漸從Ha轉移至Hb。 塗佈區域M3的下游側鄰近之區域，係用以於搬送 中使基板G的浮起高度位置，從塗佈用的浮起高度Hb ( 5 0/z m)轉移至搬出用的浮起高度He (例如l〇〇~150/z m) 之轉移區域。於此轉移區域M4的承載台76上面，係於搬 送方向上以與上述之上游側的轉移區域M2呈對稱之分布 圖案，使噴出口 88及吸引口 90混合存在而設置。 承載台76的下游端（右端）的區域M5爲搬出區域。 於光阻劑塗佈單元（CT ) 40中接受塗佈處理之基板G，係 藉由搬送手臂74 (第3圖）從該搬出區域M5的特定位置 或是搬出位置當中，被搬送至下游側鄰近之減壓乾燥單元 (VD)42(第3圖）。此搬出區域Ms係構成爲與上述搬 入區域Μ!呈空間對稱，爲了從承載台7 6上將基板G卸載 並交運至搬送手臂74 (第3圖），係於承載台下方的原先 位置與承載台上方的往動位置之間，以特定的間隔而設置 可進行昇降移動之多數根（例如4根）的頂升銷92之同 -19- 1305933 時，於承載台上面以一定密度多數設置有用以使基板G浮 起至上述浮起高度He的噴出口 88。這些頂升銷92係藉由 例如以氣缸（未圖示）爲驅動源之搬出用頂升銷升降部9 1 (第1 7圖）而加以升降驅動。 光阻劑噴嘴7 8係包含於光阻劑供應部，係具有以可 從一端至另一端爲止涵蓋承載台76上的基板G之長度而 於Y方向上延伸之長條狀的噴嘴主體，並連接於來自光阻 劑供應源93 (第17圖）之光阻劑供應管94 (第4圖）。 噴嘴升降機構75及噴嘴高度位置校正部77 (第3圖、第 13圖、第14圖、第17圖）的構成及作用將於之後詳述。 如第4圖、第7圖及第8圖所示般，基板搬送部94 係各自具有，平行配置於承載台76的左右兩邊之一對的 引導軌96，及可於軸方向上移動而裝設於各個引導軌96 上之滑動器98，及於各個引導軌96上使滑動器98直向前 進移動之搬送驅動部100，及從各個滑動器98朝向承載台 76的中心部延伸而使基板G的左右兩側邊緣部可自由裝 脫而保持之保持部102。 在此，搬送驅動部1 00係藉由直向前進型的驅動機構 ，例如由線性馬達所構成。此外，保持部102各自具有， 以真空吸附力而結合於基板G的左右兩側邊緣部的下面之 吸附墊104，及以前端部支持吸附墊104 ’並以滑動器98 側的底端部爲支點而可改變前端部的高度位置之方式來進 行彈性變形之板狀彈簧型的墊支持部1 06。吸附墊1 04係 以一定的間距而配置爲一列，墊支持部1 06係獨立支持各 -20-The function of the floating platform. Further, the straight forward moving type substrate transporting portions 84' disposed on both sides of the stage 76 are detachably held at both side edges of the substrate G, and the substrate G is directed to the longitudinal direction of the stage ( Transfer in the X direction). Specifically, the stage 7 6 is divided into five areas, M2, M3, and M5 (Fig. 5) in the longitudinal direction (X direction). The region Μ1 at the left end is the carry-in region, and the new substrate G to be coated is transported to a specific position in the region Mi. In this loading area, in order to receive the substrate G from the transport arm (Fig. 1) of the transport device 54 and load it on the carrier 76, it is placed at the original position below the stage and the moving position above the stage. A plurality of (for example, four) jacking pins 86 that can be moved up and down are provided at specific intervals. These jacking pins 86 are lifted and driven by, for example, a jacking pin lifting portion 85 for carrying in a driving source (not shown). In the loading area, in order to start the area where the floating substrate is transported, the top surface of the stage in the area is provided with a large density to float the substrate G to a desired floating height position or The discharge port 88 of the compressed air at which the high pressure or positive pressure is ejected from the floating height Ha. Here, the floating height Ha ′ of the substrate G viewed from the upper surface of the stage 76 in the carry-in area W does not need to have high precision, and may be maintained in the range of, for example, 100 to 150 /z m. Further, in the transport direction (X direction), the size of the carry-in area Μι is preferably larger than the size of the substrate g. Further, a aligning portion (not shown) for aligning the substrate g on the stage 76 is also provided in the carry-in area. -17-1305933 The area Μ 3 set on the central portion of the carrying table 76 is a photoresist supply area or a coating area. When the substrate G passes through the area Μ3, it is attached to a specific position from above. The photoresist nozzle 78 receives the supply of the photoresist R. The upper surface of the stage 76 of the coating area ,3 is mixed with a certain density, for example, in an arrangement or a distribution pattern as shown in FIG. 6, and a plurality of sheets are provided to float the substrate G to the floating height Hb. The discharge port 88 for discharging compressed air of high pressure or positive pressure, and the suction port 90 for sucking air with a negative pressure. Here, the positive pressure discharge port 88 and the negative pressure suction port 90 are mixed in order to maintain the floating height Hb at the setting 较高 with high accuracy. That is, the floating height Hb of the application region M3 defines a gap S (for example, 1 00 // m) between the lower end of the nozzle (discharge port) and the upper surface of the substrate (the surface to be processed). This gap S is an important parameter for the left and right photoresist coating film and the photoresist consumption, and must be maintained with a high degree of precision. In this embodiment, the vertical upward force due to the compressed air is applied from the discharge port 8 to the portion passing through the region M3 of the substrate G, and the suction force is applied from the suction port 90. The vertical downward force controls the equalization of the pressures synthesized in both directions, whereby the lifting height Hb for coating can be maintained at the set 値 (50 / zm). In order to perform the floating height control, a feedback control mechanism including a height detecting sensor (not shown) for detecting the height position of the substrate G may be provided. Further, the size of the carry-in area in the transport direction (X direction) needs to have a margin that forms the narrow gap S which can be settled directly below the photoresist nozzle 78, which is generally larger than the substrate G. In the middle of the loading area Μ! and the intermediate area M2 set between the application areas Mb, the small height of the child can be, for example, 1 / 3 to 1 / 4 -18 - 1305933. The floating height Ha (100 to 150 #m) from the carry-in area is changed or transferred to the transfer area of the floating height Hb (50 μm) of the coating region M3. In the transfer region M2, the discharge port 88 and the suction port 90 are also mixed and provided on the upper surface of the stage 76. However, it is arranged to gradually increase the density of the suction port 90 along the conveyance direction, and thereby the transfer height of the substrate G is gradually shifted from Ha to Hb during conveyance. The area adjacent to the downstream side of the application region M3 is used to transfer the floating height position of the substrate G during the transfer from the floating height Hb (50/zm) for coating to the lifting height He for lifting. The transfer area (for example, l〇〇~150/zm). The upper surface of the stage 76 of the transfer area M4 is provided in a distribution pattern symmetrical with the transfer area M2 on the upstream side in the transport direction, and the discharge port 88 and the suction port 90 are mixed and provided. A region M5 of the downstream end (right end) of the stage 76 is a carry-out area. The substrate G subjected to the coating treatment in the photoresist coating unit (CT) 40 is transported to the downstream side from a specific position or a carry-out position of the carry-out area M5 by the transfer arm 74 (Fig. 3). Adjacent vacuum drying unit (VD) 42 (Fig. 3). The carry-out area Ms is configured to be spatially symmetrical with respect to the carry-in area ,!, in order to unload and transport the substrate G from the stage 7 to the transport arm 74 (Fig. 3), the original position and load under the stage When a plurality of (for example, four) jacking pins 92 that can be moved up and down are provided at a specific interval between the moving positions at the upper stage, the same as the -19-1305933 of the jacking pin 92 is provided at a certain density on the carrying table. The discharge port 88 is floated to the above-described floating height He. These jacking pins 92 are driven up and down by, for example, a lifting pin lifting and lowering portion 9 1 (Fig. 7) using a cylinder (not shown) as a driving source. The photoresist nozzle 718 is included in the photoresist supply portion, and has a long nozzle body extending in the Y direction so as to cover the length of the substrate G on the carrier 76 from one end to the other end, and It is connected to the photoresist supply tube 94 (Fig. 4) from the photoresist supply source 93 (Fig. 17). The configuration and operation of the nozzle elevating mechanism 75 and the nozzle height position correcting unit 77 (Fig. 3, Fig. 13, Fig. 14, and Fig. 17) will be described in detail later. As shown in FIG. 4, FIG. 7, and FIG. 8, the substrate transfer unit 94 has guide rails 96 that are arranged in parallel on one of the left and right sides of the stage 76, and are movable in the axial direction. The slider 98 provided on each of the guide rails 96 and the transport drive unit 100 for moving the slider 98 straight forward on each of the guide rails 96 and extending from the respective sliders 98 toward the center of the stage 76 to form the substrate The left and right side edge portions of G are detachably held and held by the holding portion 102. Here, the transport drive unit 100 is constituted by a straight forward drive mechanism, for example, a linear motor. Further, each of the holding portions 102 has a suction pad 104 that is coupled to the lower surface of the left and right side edge portions of the substrate G by a vacuum suction force, and a bottom end portion that supports the adsorption pad 104' at the front end portion and the slider 98 side. A plate spring type pad support portion 106 that elastically deforms the fulcrum and changes the height position of the front end portion. The adsorption pad 104 is arranged in a row at a certain pitch, and the pad support portion 106 is independently supported by each -20-
1305933 個吸附墊1 〇 4。藉此，可於各個吸附墊1 〇 4及墊3 106爲獨立之高度的位置上（即使爲不同高度亦可） 定的保持基板G。 如第7圖及第8圖所示般，此實施型態之墊支 1 0 6係裝設於板狀的墊昇降構材1 〇 8，該墊昇降構和 係可昇降地裝設於滑動器9 8的內側面。由滑動器9 8 裝載之例如爲氣缸（未圖中示）所組成之墊促動器 第1 7圖），係在低於基板G的浮起高度位置之原失 (回退位置）與對應於基板G的浮起高度位置之往® (結合位置）之間，使墊昇降構材108進行昇降移動 如第9圖所示般，各個吸附墊1 〇4例如爲合成櫺 ，並於直方體形狀的墊主體110的上面設置多數個明 1 1 2。這些吸引口 1 1 2雖然爲狹縫狀的長形孔，但亦 圓形或矩形的小孔。於吸附墊1 04上係連接有例如由 橡膠所組成之帶狀的真空管1 1 4。這些真空管1 1 4的 1 1 6係各自連通於墊吸附控制部1 1 5 (第1 7圖）的真 墊吸附控制部1 15 (第17圖）亦透過切換閥（珠 )，而將真空管114的管路116連接於壓縮空氣源（ 示），於從基板G的側邊緣部當中使吸附墊1 04分離 將該切換閥切換至該壓縮空氣源側，使正壓或高壓的 空氣供應至該吸附墊104。 如第4圖所示般，於保持部102中，較理想爲使 一列的吸附墊1 04及墊支持部1 06爲依照各1組而分 :持部 ，安 :持部 f 108 上所 109 ( i位置 7位置 〇 〖膠製 :引口 :可爲 丨合成 I管路 :空源 :圖示 未圖 :時， 1壓縮 :單側 •離之 -21 - 1305933 分離型或是完全獨立型的構成。然而，如第10圖所示般 ，亦可爲以設置有缺口部1 1 8之1片的板狀彈簧來形成單 側一列份之墊支持部1 20，並於該上方配置單側一列的吸 附墊104之一體型的構成。 如上述般，於承載台76的上面係設置多數個噴出口 8 8。於此實施型態中，關於屬於承載台7 6的搬入區域Μ! 及搬出區域M5之各個噴出口 8 8，係以流量切換閥的型態 於承載台76的內部設置噴出控制部1 22，該噴出控制部 > 1 22係以與基板G的相對位置關係而個別且自動地切換空 氣的噴出流量。 第1 1圖係顯示一實施例之噴出控制部1 22的構成。 此噴出控制部122係具有：具有形成於承載台76之內部 的球面體形狀之壁面的閥室124，及於此閥室124中可移 動地設置之球狀的閥體126。於閥室124的頂部及底部上 ，係各自形成以鉛直方向而互爲對向之出口 124 a及入口 > 124b。出口 124a係與對應於該噴出控制部122之噴出口 88連通。入口 124b係與在承載台76的下部延伸之壓縮空 氣供應路徑128連通。 第12圖係顯示承載台76內之壓縮空氣供應路徑128 的配管圖案之一例。例如來自於壓縮機等的壓縮空氣源（ 未圖示）之壓縮空氣’係於外部配管130當中流通而被導 入於承載台76內的壓縮空氣導入部132。被導入於壓縮空 氣導入部1 32之壓縮空氣，係從該處被分配至佈滿於承載 台76內之多數壓縮空氣供應路徑128。 -22-1305933 adsorption pads 1 〇 4. Thereby, the substrate G can be held at a position where the respective adsorption pads 1 〇 4 and 3106 are at an independent height (even at different heights). As shown in Fig. 7 and Fig. 8, the pad support of this embodiment is mounted on a plate-shaped pad lifting member 1 〇8, and the pad lifting mechanism and the system are mounted on the slider in a liftable manner. The inner side of the 9 8 . The pad actuator (for example, the slider actuator composed of a cylinder (not shown)) loaded by the slider 98 is at the original loss (retraction position) and corresponding to the floating height position of the substrate G. The pad lifting member 108 is moved up and down between the floating height position of the substrate G (joining position). As shown in Fig. 9, each of the adsorption pads 1 〇 4 is, for example, a synthetic crucible, and is in a rectangular parallelepiped. A plurality of Ming 1 1 2 are provided on the upper surface of the shaped pad main body 110. These suction ports 1 1 2 are slit-shaped elongated holes, but are also circular or rectangular small holes. A strip-shaped vacuum tube 1 14 composed of, for example, rubber is attached to the adsorption pad 104. The 1 16 of the vacuum tubes 1 14 are connected to the pad adsorption control unit 1 15 (Fig. 17), and the true pad adsorption control unit 1 15 (Fig. 17) also passes through the switching valve (bead) to vacuum the tube. The line 116 of 114 is connected to a source of compressed air (shown), and the adsorption pad 104 is separated from the side edge portion of the substrate G to switch the switching valve to the compressed air source side, so that positive or high pressure air is supplied to The adsorption pad 104. As shown in Fig. 4, in the holding portion 102, it is preferable that the adsorption pad 104 and the pad support portion 106 of one row are divided into one group: the holding portion, and the holding portion f 108 (i position 7 position 〇 〖adhesive: spigot: can be 丨 synthesis I pipeline: empty source: illustration not shown: when, 1 compression: one side • away from - 21 - 1305933 separate type or completely independent type However, as shown in Fig. 10, a one-side one-piece pad support portion 1 20 may be formed by a plate spring provided with one of the notch portions 1 18, and the upper side arrangement sheet may be arranged. A configuration of one of the suction pads 104 in the side row. As described above, a plurality of discharge ports 8 are provided on the upper surface of the stage 76. In this embodiment, the loading area belonging to the stage 76 is Each of the discharge ports 8 of the carry-out area M5 is provided with a discharge control unit 1 22 inside the stage 76 in the form of a flow rate switching valve, and the discharge control unit > 1 22 is individually formed in a relative positional relationship with the substrate G. The discharge flow rate of the air is automatically switched. Fig. 1 shows the configuration of the discharge control unit 1 22 of the embodiment. The discharge control unit 122 includes a valve chamber 124 having a spherical surface formed inside the stage 76, and a spherical valve body 126 movably provided in the valve chamber 124. The valve chamber 124 is provided in the valve chamber 124. The top and the bottom are each formed with an outlet 124a and an inlet > 124b which are opposite to each other in the vertical direction. The outlet 124a communicates with the discharge port 88 corresponding to the discharge control unit 122. The inlet 124b is attached to the stage The compressed air supply path 128 extending from the lower portion of the 76 is connected. Fig. 12 is an example of a piping pattern showing the compressed air supply path 128 in the carrier 76. For example, compression of a compressed air source (not shown) from a compressor or the like. The air 'flows into the external piping 130 and is introduced into the compressed air introduction portion 132 in the stage 76. The compressed air introduced into the compressed air introduction unit 132 is distributed from the place to the carrier 76. Most of the compressed air supply path 128. -22-
1305933 於第11圖中，閥室124的出口 124 a之周圍係構局 座°於此閥座上，係以特定的間隔（例如間隔90° )忠 轉的方向上形成有多數個溝部124c，該溝部124c係衫 口 124a呈放射狀延伸。藉此，即使閥體126密接於每 固定於閥座上而阻塞出口 124a，壓縮空氣亦可從閥室 當中通過溝部1 24c而往噴出口 8 8漏出。閥體1 2 6係| 較閥室124的內徑還小1圈或是2圏之直徑，且爲樹用 的球體，於球面的下半部上，係接受到因應入口 1 24b 的空氣壓之垂直朝上的力Pu，且於球面的上半部上， 受到因應出口 1 24a側的空氣壓之垂直朝下的力（反們 力）Pd。此外，於閥體126上係一直存在因應該質量；^ 力P。（一定値）之作用。閥體1 26係因應上述之垂直享J 的力Pu及垂直朝下的力（PD + Pc )的差，而於閥室124 改變鉛直方向的位置（高度位置）。 如第1 1圖所示般，於此實施型態中，係因應基板 是否存在於各個噴出口 88之上方，而於該噴出口 88纪 下方之噴出控制部122中，閥室124的閥體126的高g 置切換爲密接於出口 124a側的閥座之第1位置，或葡 該閥座而在閥室1 24內處於漂浮狀態之第2位置之任一 亦即，於基板G存在於各個噴出口 88的上方（屬 而言爲在設定浮起高度Ha以下之接近距離）時，由於 自於基板G的反作用使該噴出口 88附近及該正下方；έ 室124的出口 124a附近的空氣壓上升，使作用於閥體 之垂直朝下的力（尤其是PD)增加至與垂直朝上的力 :閥 :旋 :出 S是 124 :有 t製 側 、接 ;用 :重 ί上 內 G J正 i位 開 〇 f格 r來 :閥 126 Pu -23- 1305933 相近或是稍微超過，使閥體126從出口 124a側的閥座離 開。藉此，出口 124a成爲開放狀態’從入口 1 24b導入至 閥室124之壓縮空氣，係以較大流量通過出口 124a出口 124a而從噴出口 88噴出。 如上述般，藉由形成於承載台76的上面之噴出口 88 以及用以將浮起力產生用的壓縮空氣供應至該等噴出口 88 之壓縮空氣供應機構1 34 (壓縮空氣源、外部配管1 30、 壓縮空氣供應路徑128、噴出控制部122等）、於承載台 76的區域Μ2、M3、M4內與噴出口 88混合存在而形成之吸 引口 90以及用以將真空壓力供應至該等吸引口 90之真空 機構136等，而構成可於搬入區域及搬出區域M5中有 效率的以期望的高度使基板G浮起，且於塗佈區域M3的 中以高精準度使基板G浮起至設定的高度位置之承載台基 板浮起部1 3 8 (第1 7圖）。 第1 3圖係顯示噴嘴升降機構75、噴嘴高度位置校正 部77及真空機構136的構成。噴嘴升降機構75係具有： 以以於與搬送方向（X方向）直交之方向（Y方向）涵蓋 塗佈區域M3的上方搬送方向之方式架設之門形支持體140 、裝設於此門形支持體1 40之鉛直直線運動機構1 42、使 該鉛直直線運動機構1 4 2的移動體（昇降體），例如水平 棒144及光阻劑噴嘴78結合之接合部146。在此，鉛直直 線運動機構142的驅動部例如爲以電動馬達148、球狀螺 絲1 5 0及引導構材1 5 2等所構成。此外，接合部1 4 6係具 備：透過噴嘴高度位置校正部77的壓電促動器1 54而結 -24- 1305933 合於水平棒144的上面之角筒狀的接合構材156、及上 連接於接合構材156且下端連接於光阻劑噴嘴78之鉛 棒158所構成。電動馬達148的旋轉力係藉由球狀螺絲 構（150、152、144 )而被轉換爲鉛直方向的直線運動 接合部146及光阻劑噴嘴78係與昇降體的水平棒144 體而往鉛直方向進行昇降運動。可藉由電動馬達148的 轉量及旋轉停止位置，而任意控制光阻劑噴嘴78的昇 移動量及高度位置。 真空機構136係由以下構件所構成：以在承載台 上面被分割之多數個區域別而連接於吸引口 90之多數 上部岐管159、連接於這些多數個上部岐管159之單體 下部岐管160、及將此下部岐管160連接於真空源162 排氣管164等。來自於真空源162之真空壓力，係透過 氣管164、下部岐管160及上部岐管159而被供應至承 台76上面的各個吸引口 90。亦即，承載台76上面的空 係藉由負壓吸引力而被吸入於吸引口 90中，之後並通 上部岐管159、下部岐管160及排氣管164而被吸入於 空源162。在此，各個上部岐管159係設置於承載台76 各個區域下方（承載台內），下部岐管160係設置於承 台7 6的外部。真空源1 6 2係採用例如爲鼓風機或是工 排氣線（耗力）等。 於真空機構1 36的適當場所上，例如於排氣管1 64 ，裝設有壓力感測器1 6 6。此壓力感測器1 6 6係由計示 力計所組成，並輸出電氣信號（壓力檢測信號）AG ’該 端 直 機 旋 降 76 個 的 之 排 載 氣 適 真 的 載 廠 上 壓 壓 -25- 1305933 力檢測信號AG係以大氣壓爲基準來測量排氣管1 64內的 真空壓力，並以計示壓力來表示測定壓力。此壓力檢測信 號A G被傳送至後所述之噴嘴高度位置校正部7 7的控制電 路170 (第15圖），並因應必要亦傳送至控制器180 (第 1 7 圖）。 第15圖係顯示噴嘴高度位置校正部77之信號處理系 的構成。控制電路1 70係輸入有來自於壓力感測器1 66之 壓力檢測信號AG，並產生用以因應真空機構1 3 6之真空 壓力的變動而於鉛直方向改變光阻劑噴嘴7 8之控制信號 CS’較理想爲具有濾波器電路170a、延遲電路170b、放 大電路170c等。 在此，濾波器電路1 70a亦可包含：用以將對應於檢 測對象之真空壓力變動量之壓力檢測信號AG的交流量加 以抽出之濾波器、以及用以忽視（去除）不會對基板G之 上下方向的振動（位移）產生影響之微小壓力變動量（高 頻成分）之濾波器等。由於真空機構136內的真空壓力變 動及對應於該壓力變動之基板G的位移之間會產生一定的 時間延遲’因此延遲電路1 70b係以使光阻劑噴嘴78的位 移與基板G的位移同步之方式，使控制信號CS具有特定 的時間延遲△ T ( ms )。放大電路1 70c係以針對真空壓力 的變動而使光阻劑噴嘴7 8的位移量配合基板G的位移量 般之放大率或是增益，而放大控制信號CS。 從控制電路1 7 0所輸出之控制信號C S，係透過驅動 電路172而傳送至壓電促動器154。壓電促動器154的壓 -26- 1305933 電元件1 54a係在供應控制信號cs時，藉由反壓電效果而 產生上下移位。如第14圖（A)所示般，壓電促動器154 的壓電元件1 5 4 a往鉛直上方移位時，則光阻劑噴嘴7 8透 過接合構材1 5 6及鉛直棒1 5 8，亦往鉛直上方移位相同的 位移量。此外，如第14圖（B )所示般，壓電促動器154 的壓電元件154a往鉛直下方移位時，則光阻劑噴嘴78透 過接合構材1 5 6及鉛直棒1 5 8，亦往鉛直下方移位相同的 位移量。 第16圖係模式揭示真空機構136內之真空壓力的變 動與光阻劑噴嘴7 8的位移之間的關係（一例）。圖中， 縱軸上的” -Ps”爲真空機構136內的（測定點的）真空壓 力之設定値或基準値。如上述般，係以使對真空壓力的變 動之光阻劑噴嘴7 8的位移以就時間上與位移量上均與基 板G的位移爲一致或是近似之方式，來設定或是調整控制 電路170之濾波器特性、延遲特性、及增益特性。於以數 位電路來構成控制電路170時，係各自於該輸入段及輸出 段設置A/D轉換器及D/A轉換器。之後，於中心部的數位 信號處理電路中，可從控制器180(第17圖）當中供應瀘 波器係數、延遲時間、及增益率等之各種設定値。 第17圖係揭示本實施型態之光阻劑塗佈單元（CT) 40的控制系統的構成之方塊圖。控制器1 80係由微電腦所 組成，用以控制單元內的各部分，尤其是光阻劑供應源93 、噴嘴升降機構75、噴嘴高度位置校正部77、搬送驅動 部1 00、墊吸附控制部1 1 5、墊促動器1 09、搬入用頂升銷 -27- 13059331305933 In Fig. 11, a peripheral portion of the outlet 124a of the valve chamber 124 is formed on the valve seat, and a plurality of grooves 124c are formed in a direction in which a certain interval (for example, an interval of 90°) is loyal. The groove portion 124c extends radially. Thereby, even if the valve body 126 is in close contact with each other and is fixed to the valve seat to block the outlet 124a, the compressed air can leak from the valve chamber through the groove portion 14c to the discharge port 88. The valve body 1 2 6 system| is smaller than the inner diameter of the valve chamber 124 by one turn or two turns, and is a sphere for the tree. On the lower half of the spherical surface, the air pressure is received in response to the inlet 1 24b. The vertically upward force Pu, and on the upper half of the spherical surface, is subjected to a vertical downward force (P) against the air pressure on the side of the outlet 1 24a. In addition, there is always a quality on the valve body 126; The role of (certainly). The valve body 1 26 changes the position (height position) in the vertical direction in the valve chamber 124 in response to the difference between the vertical force J and the vertically downward force (PD + Pc). As shown in Fig. 1, in this embodiment, the valve body of the valve chamber 124 is disposed in the discharge control portion 122 below the discharge port 88 in response to the presence or absence of the substrate above the respective discharge ports 88. The height g of 126 is switched to the first position of the valve seat that is in close contact with the outlet 124a side, or the second position that is in the floating state in the valve chamber 14 by the valve seat, that is, the substrate G is present in the substrate G. When the upper side of each of the discharge ports 88 (which is a proximity distance below the set float height Ha), the vicinity of the discharge port 88 and directly below the discharge port 88 from the reaction of the substrate G; near the outlet 124a of the chamber 124 The air pressure rises, so that the vertical downward force acting on the valve body (especially PD) is increased to the vertical upward force: valve: rotary: S is 124: there is t side, connected; The inner GJ is in position r: the valve 126 Pu -23-1305933 is close or slightly over, leaving the valve body 126 away from the valve seat on the side of the outlet 124a. Thereby, the outlet 124a is in an open state. The compressed air introduced into the valve chamber 124 from the inlet 1 24b is ejected from the discharge port 88 through the outlet 124a at a large flow rate through the outlet 124a. As described above, the compressed air supply mechanism 134 (compressed air source, external piping) that is formed on the upper surface of the stage 76 and the compressed air for generating the floating force is supplied to the discharge ports 88. 1 30, a compressed air supply path 128, a discharge control unit 122, etc.), a suction port 90 formed by mixing the discharge ports 88 in the regions Μ2, M3, and M4 of the stage 76, and for supplying vacuum pressure thereto. The vacuum mechanism 136 or the like of the suction port 90 is configured to efficiently float the substrate G at a desired height in the carry-in area and the carry-out area M5, and to float the substrate G with high precision in the application region M3. The carrier substrate floating portion 1 3 8 to the set height position (Fig. 17). Fig. 13 shows the configuration of the nozzle elevating mechanism 75, the nozzle height position correcting portion 77, and the vacuum mechanism 136. The nozzle elevating mechanism 75 has a gate-shaped support body 140 that is disposed so as to cover the upper conveyance direction of the application region M3 in a direction (Y direction) orthogonal to the conveyance direction (X direction), and is attached to the gate shape support. The vertical linear motion mechanism 1 42 of the body 1 40, the moving body (elevating body) of the vertical linear motion mechanism 142, for example, the joint portion 146 in which the horizontal bar 144 and the photoresist nozzle 78 are combined. Here, the driving portion of the vertical linear motion mechanism 142 is constituted by, for example, an electric motor 148, a spherical screw 150, a guiding member 155, and the like. Further, the joint portion 146 includes a piezoelectric actuator 1 54 that passes through the nozzle height position correcting portion 77, and a junction-shaped tubular member 156 that is attached to the upper surface of the horizontal rod 144, and the upper portion. The lead rod 158 is connected to the bonding member 156 and has a lower end connected to the photoresist nozzle 78. The rotational force of the electric motor 148 is converted into a linear motion joint portion 146 and a photoresist nozzle 78 in the vertical direction by the ball screw structure (150, 152, 144) and the horizontal rod 144 body of the lift body is straightened. The direction is to move up and down. The amount of lift and the height position of the photoresist nozzle 78 can be arbitrarily controlled by the amount of rotation of the electric motor 148 and the rotation stop position. The vacuum mechanism 136 is composed of a plurality of upper manifolds 159 connected to the suction port 90 in a plurality of regions divided on the upper surface of the carrier, and a unit lower manifold connected to the plurality of upper manifolds 159. 160. Connect the lower manifold 160 to the vacuum source 162, the exhaust pipe 164, and the like. The vacuum pressure from the vacuum source 162 is supplied to the respective suction ports 90 above the header 76 through the gas pipe 164, the lower manifold 160 and the upper manifold 159. That is, the space above the stage 76 is sucked into the suction port 90 by the suction force of the negative pressure, and then sucked into the air source 162 through the upper manifold 159, the lower manifold 160, and the exhaust pipe 164. Here, each of the upper manifolds 159 is disposed below each region of the carrier 76 (inside the carrier), and the lower manifold 160 is disposed outside the platform 76. The vacuum source 1 6 2 is, for example, a blower or a working exhaust line (power consumption). At a suitable location of the vacuum mechanism 136, such as the exhaust pipe 1 64, a pressure sensor 166 is installed. The pressure sensor 16 6 is composed of a gauge force meter, and outputs an electrical signal (pressure detection signal) AG 'the end of the straight machine spins down 76 of the carrier gas is suitable for the load on the factory - 25-1305933 The force detection signal AG measures the vacuum pressure in the exhaust pipe 1 64 based on the atmospheric pressure, and indicates the measured pressure by the gauge pressure. This pressure detecting signal A G is transmitted to the control circuit 170 (Fig. 15) of the nozzle height position correcting portion 7 described later, and is also transmitted to the controller 180 as necessary (Fig. 17). Fig. 15 shows the configuration of the signal processing system of the nozzle height position correcting unit 77. The control circuit 1 70 is input with the pressure detection signal AG from the pressure sensor 166, and generates a control signal for changing the photoresist nozzle 78 in the vertical direction in response to the variation of the vacuum pressure of the vacuum mechanism 136. CS' preferably has a filter circuit 170a, a delay circuit 170b, an amplification circuit 170c, and the like. Here, the filter circuit 1 70a may further include: a filter for extracting an AC amount of the pressure detection signal AG corresponding to the fluctuation amount of the vacuum pressure of the detection target, and for ignoring (removing) the substrate G A vibration (displacement) in the up-and-down direction generates a filter or the like that affects a small amount of pressure fluctuation (high-frequency component). A certain time delay occurs between the vacuum pressure fluctuation in the vacuum mechanism 136 and the displacement of the substrate G corresponding to the pressure variation. Therefore, the delay circuit 170b is configured to synchronize the displacement of the photoresist nozzle 78 with the displacement of the substrate G. In this way, the control signal CS has a specific time delay Δ T (ms). The amplifying circuit 1 70c amplifies the control signal CS by making the displacement amount of the photoresist nozzle 78 match the displacement amount or the gain of the substrate G with respect to the fluctuation of the vacuum pressure. The control signal C S outputted from the control circuit 170 is transmitted to the piezoelectric actuator 154 through the drive circuit 172. The voltage of the piezoelectric actuator 154 -26-1305933, the electrical component 1 54a, is caused to shift up and down by the inverse piezoelectric effect when the control signal cs is supplied. As shown in Fig. 14(A), when the piezoelectric element 1 5 4 a of the piezoelectric actuator 154 is displaced vertically upward, the photoresist nozzle 7 8 is transmitted through the bonding member 1 5 6 and the vertical rod 1 5 8, also shift the same amount of displacement to the vertical. Further, as shown in Fig. 14(B), when the piezoelectric element 154a of the piezoelectric actuator 154 is displaced vertically downward, the photoresist nozzle 78 is transmitted through the bonding member 156 and the vertical rod 1 5 8 It also shifts the same displacement amount vertically downward. Fig. 16 is a view showing a relationship (an example) between the change in the vacuum pressure in the vacuum mechanism 136 and the displacement of the photoresist nozzle 78. In the figure, "-Ps" on the vertical axis is the setting of the vacuum pressure (measurement point) or the reference 内 in the vacuum mechanism 136. As described above, the displacement of the photoresist nozzle 78 for varying the vacuum pressure is set or adjusted in such a manner that the displacement of the substrate G is coincident or approximated in time and displacement. 170 filter characteristics, delay characteristics, and gain characteristics. When the control circuit 170 is constructed by a digital circuit, an A/D converter and a D/A converter are provided in the input section and the output section, respectively. Thereafter, in the digital signal processing circuit of the center portion, various settings such as chopper coefficients, delay times, and gain ratios can be supplied from the controller 180 (Fig. 17). Fig. 17 is a block diagram showing the configuration of a control system of the photoresist coating unit (CT) 40 of the present embodiment. The controller 180 is composed of a microcomputer for controlling various parts in the unit, in particular, a photoresist supply source 93, a nozzle lifting mechanism 75, a nozzle height position correcting unit 77, a transport driving unit 100, and a pad adsorption control unit. 1 1 5, pad actuator 1 09, loading top lifting pin -27- 1305933
升降部85、搬出用頂升銷升降部91、壓縮空氣供應機構 134、真空機構136等之個別的動作及整體的動作（順序 )Q 接下來說明本實施型態之光阻劑塗佈單元（CT ) 40 的塗佈處理動作。 控制器1 80係於主記憶體中，讀取並執行例如儲存於 光碟等的記憶媒體中之光阻劑塗佈處理程式，而進行程式 化之一連串的塗佈處理動作之控制。 從搬送裝置54(第1圖）當中將未處理之新的基板G 搬入至此搬入區域內時，則頂升銷86於往動位置上接 收該基板G。於搬送裝置5 4退出後，頂升銷8 6下降並將 基板G降低至搬送用的高度位置，亦即至浮起高度Ha ( 第5圖）爲止。接下來校準部（未圖示）進行動作，從四 方當中將按壓構材（未圖示）按壓於浮起狀態的基板G, 並於承載台76上進行基板G的對位。完成對位動作時， 則於基板搬送部84當中墊促動器109進行動作，使吸附 墊104從原先位置（回退位置）往往動位置（結合位置） 上升（UP)。吸附墊104在此之前係成爲真空，並以真空 吸附力來進行是否接觸於浮起狀態的基板G的側緣部之結 合。於吸附墊104結合於基板G的側緣部之後，校準部係 使按壓構材回退至特定位置。 接下來，基板搬送部84在以保持部102保持基板g 的側緣部之狀態下，以相對較高速之一定速度使滑動器98 從搬送起點位置開始往搬送方向（X方向）直向前進移動 -28- 1305933 。如此一來’基板G以浮起於承載台76上之狀態，直向 前進移動至搬送方向，基板G的前端部到達光阻劑噴嘴 78的正下方附近之設定位置時，基板搬送部84係停止第 1階段的基板搬送。此時，噴嘴升降機構75係於上方的回 退位置上使光阻劑噴嘴7 8待機。 基板G停止時，則噴嘴升降機構75會作動，使光阻 劑噴嘴78往垂直下方下降，並於噴嘴吐出口與基板G之 間的距離間隔或是間隙S到達設定値（例如爲1 00 // m ) 時，停止噴嘴的下降動作。接下來，使光阻劑供應部開始 從光阻劑噴嘴7 8朝向基板G的上面，吐出光阻劑。此時 較理想爲，最初爲吐出微量的光阻劑使噴嘴吐出口與基板 G之間的間隙S完全塞住之後，再以正規的流量開始吐出 。另一方面，基板搬送部84係開始第2階段的基板搬送 。此第2階段、亦即爲塗佈時的基板搬送，係以相對較低 速之一定速度來進行。如此一來，於塗佈區域M;中，基 板G係在水平姿勢下以一定速度往搬送方向（X方向）移 動，同時長條型的光阻劑噴嘴78係以一定的流量，以帶 狀般朝向正下方的基板G吐出光阻劑R，藉此係從基板G 的前端側往後端側形成光阻劑的塗佈膜RM。 至少於塗佈區域M3內，壓縮空氣供應機構1 34及真 空機構1 36，係以經常將各自所設定之基準的正壓及負壓 安定的供應至噴出口 88及吸引口 90之方式進行動作，並 藉由控制器1 80的漂浮控制功能，而達到由噴出口 88而 對通過塗佈區域M3之基板G所施加之垂直朝上的壓力， -29- 1305933 與由吸引口 9 0所施加之垂直朝下的壓力之間的均衡，而 可以更高的精準度使基板G的浮起高度Hb較其他區域’ 尤其是較搬入區域的浮起高度Ha及搬出區域M5的浮 起高度He更爲安定保持。然而，實際上由於例如以真空 源之鼓風機所產生的機械振動等原因，真空機構1 36內的 真空壓力較多的情況會產生如第16圖所示之變動（一般 爲振動）。一旦用以使通過塗佈區域Μ;之基板G上所施 加的浮起力達到安定之真空壓力或是吸引力產生變動，則 基板G仍會產生極爲微小之上下的浮動（一般爲數微米以 下的振幅）。 於此實施型態中，真空機構136內的真空壓力產生變 動時，則噴嘴高度位置校正部77的控制電路170係通過 壓力感測器1 66而檢測出該真空壓力的變動，並產生對該 真空壓力的變動具有一定的回應特性之控制信號C S，而 驅動並控制壓電促動器154，並藉由壓電促動器154所產 生之物理性位移，而控制光阻劑噴嘴78的高度位置成爲 可變。藉此，如第18圖所示般，於因應真空機構13 6之 真空壓力的變動而使基板G較所設定的浮起高度Hb更往 上方移位時，係於與該基板G的位移爲相同時機中，使光 阻劑噴嘴7 8僅僅往上方移位爲幾乎相同的位移量，結果 爲可將光阻劑噴嘴78與基板G之間的間隙S保持在設定 値（例如爲1 0 0 // m )。此外，如第19圖所示般，於因應 真空機構1 3 6之真空壓力的變動而使基板G較所設定的浮 起高度Hb更往下方移位時，係於與該基板G的位移爲相 -30- 1305933 同時機中，使光阻劑噴嘴7 8僅僅往下方移位爲幾乎 的位移量，因此仍可將光阻劑噴嘴7 8與基板G之間 隙S保持在設定値（例如爲100 μ m ) ° 如此，於塗佈處理中，即使用以使通過塗佈區隹 的浮起力或是浮起高度達到高精準度的安定之真空壓 是吸引力產生變動，而使基板G產生上下浮動，亦可 阻劑噴嘴78與基板G之間的間隙S保持在設定値（ 爲100 M m )，因此可於一定的擴散特性下，以帶狀 光阻劑噴嘴7 8的吐出口當中將光阻劑R塗佈於基板 ，而獲得膜厚爲一致之光阻劑塗佈膜。 結束於塗佈區域M3中之上述的塗佈處理時’亦 板G的後端部通過光阻劑噴嘴78的正下方時’則光 供應源93結束從光阻劑噴嘴78當中之光阻劑R的吐 與此同時，係停止噴嘴高度位置校正部77的功能， 代之的是使噴嘴升降機構75進行動作，使光阻劑噴D 往垂直上方提高而從基板G當中回退。另一方面’基 送部84係切換爲搬送速度相對較高之第3階段的基 送。之後，一旦基板G到達搬出區域M5內的搬送終 置，則基板搬送部84停止第3階段的基板搬送。之 墊吸附控制部1 1 5停止對吸附墊1 04之真空的供應， 墊促動器1 09使吸附墊1 04從往動位置（結合位置） 至原先位置（回退位置），使吸附墊104從基板G的 端部當中分離。此時，墊吸附控制部1 1 5係供應正壓 縮空氣）至吸附墊104，而增快從基板G之分離。相 相同 的間 I m3 力或 將光 例如 般從 G上 即基 阻劑 出。 取而 I 78 板搬 板搬 點位 後， 同時 下降 兩側 (壓 對的 -31 - 1305933 ，頂升銷92係使基板G從用以進行卸載之承載台下方的 原先位置開始往承載台上方的往動位置上升。 然後，搬出機或是搬出手臂74係接近於搬出區域M5 ，從頂升銷92當中接收基板G並往承載台76的外部搬出 。一旦基板G被傳送至頂升銷92，則基板搬送部84立即 以高速將基板G拉回至搬入區域。一旦於搬出區域M5 中結束上述處理之基板G被搬出時，則於搬入區域Mh中 將下一片應予進行塗佈處理之新的基板G加以搬入，並進 行對位及搬送開始。 如上述般，於此實施型態中，於承載台76上各別設 置搬入區域、塗佈區域M3、搬出區域M5，並依序將基 板傳送至各個區域，而於各個區域中依序轉送基板，獨立 或是平行進行基板搬入動作、光阻劑供應動作、基板搬出 動作，藉此，相較於將1片基板搬入至承載台76上並載 入之動作的所需時間（Tin )、加上於承載台76上從搬入 區域Mi搬送至搬出區域M5之動作的所需時間（Tc)、再 加上從搬出區域M5搬出之動作的所需時間（Tout )之後 之塗佈處理之1個循環的所需時間（Tc + Tin + Tout)，更可 縮短製程時間。 並且，係利用從承載台76的上面所設置之噴出口 88 當中噴出之氣體壓力，使基板G於空中浮起，並一邊於承 載台76上搬送所浮起的基板G，一邊從長.條型的光阻劑 噴嘴78當中將光阻劑供應並塗佈於基板〇上，因此可順 利並且有效率的對應於基板的大型化。 -32- 1305933 此外，於基板G通過承載台76的塗佈區域Ms的 ，即使從吸引口 90所接收之垂直朝下的壓力（吸引 產生變動，亦可在因該變動而使基板G產生上下浮動 相同的時機，使光阻劑噴嘴7 8亦同樣進行上下浮動 此可使光阻劑噴嘴78與基板G之間的間隙S安定的 在設定値，而於基板G上形成不具塗佈波紋之一定膜 光阻劑塗佈膜。 以上係說明本發明之較佳的實施型態，但是本發 不限定於上述實施型態，於該技術思想的範圍內可進 種的變形。 例如，上述實施型態之基板搬送部84的保持部 爲具有真空吸附式的墊104，但亦可爲由機械式來保 板G的側緣部之墊等。此外，關於用以可裝脫般而 1 04結合於基板G的側緣部之機構（墊支持部1 06、 降構材108、墊促動器109)，亦可採用種種方式及 。此外，上述實施型態之基板搬送部84係保持基板 左右兩側邊緣部而搬送，但亦可僅保持基板G的單側 緣部而進行基板搬送。 此外可選擇各種之壓力感測器1 6 6的裝設位置， 測出真空機構1 3 6內的真空壓力，例如可檢測出承載_ 內的上部岐管159附近之真空壓力。此外，於噴嘴高 置校正部7 7中，可對控制電路1 7 0的電路構成及信 理方式等進行各種的變形，此外，亦可進行將壓電促 置換爲其他之微小的驅動用促動器（例如聲控線圈促 途中 力） 者爲 ，因 保持 厚的 明並 行種 102 持基 將墊 墊昇 構成 G的 的側 而檢 台76 度位 號處 動器 動器 -33- 1305933 )等之變形。 上述實施型態係關於LCD製造之塗佈顯像處理系統的 光阻劑塗佈裝置，但是本發明亦可適用於用以將處理液供 應至被處理基板之任意的處理裝置及應用。因此，關於本 發明之處理液，除了光阻劑之外，亦可爲層間絕緣材料、 電介質材料、配線材料等之塗佈液，亦可爲顯像液及沖洗 液等。本發明之被處理基板並不限定於LCD基板，亦可爲 其他之平面顯示器用基板、半導體晶圓、CD基板、玻璃 基板、光罩、印刷電路板等。 【圖式簡單說明】 第1圖係顯示本發明之可適用的塗佈顯像處理系統的 構成之平面圖。 第2圖係顯示實施型態之塗佈顯像處理系統的處理步 驟之流程圖。 第3圖係顯示實施型態之塗佈顯像處理系統的光阻劑 塗佈單元及減壓乾燥單元的整體構成之略平面圖。 第4圖係顯示實施型態之光阻劑塗佈單元的整體構成 之斜視圖。 第5圖係顯示實施型態之光阻劑塗佈單元的整體構成 之略正面圖。 第6圖係顯示實施型態之承載台塗佈區域的噴出口及 吸引口之排列模式的一例之平面圖。 第7圖係顯示實施型態之光阻劑塗佈單元的基板搬送 -34- 1305933 部的構成之一部分剖面略側面圖。 第8圖係顯示實施型態之光阻劑塗佈單元的基板搬送 部的保持部之構成之擴大剖面圖。 第9圖係顯示實施型態之光阻劑塗佈單元的基板搬送 部的墊部之構成之斜視圖。 第1 0圖係顯示實施型態之光阻劑塗佈單元的基板搬 送部的保持部之一項變形例之斜視圖。 第1 1圖係顯示實施型態之光阻劑塗佈單元的噴出控 制部的構成之剖面圖。 第1 2圖係顯示實施型態之光阻劑塗佈單元的承載台 內部之流路的構成之部分剖面圖。 第1 3圖係顯示實施型態之光阻劑塗佈單元的噴嘴升 降機構、噴嘴高度位置校正部及真空機構的構成之圖式。 第1 4圖係顯示實施型態之光阻劑塗佈單元的噴嘴高 度位置校正部之機械系統的構成之一部分剖面略側面圖。 第1 5圖係顯示實施型態之光阻劑塗佈單元的噴嘴高 度位置校正部之信號處理系的構成之方塊圖。 第1 6圖係模式性的顯示實施型態之光阻劑塗佈單元 的真空機構內之真空壓力的變動與光阻劑噴嘴的位移之間 的關係之波形圖。 第1 7圖係顯示實施型態之光阻劑塗佈單元的控制系 統的構成之方塊圖。 第1 8圖係顯示實施型態之噴嘴高度位置校正部的作 用之略側面圖。 -35- 1305933 第1 9圖係顯示實施型態之噴嘴高度位置校正部的作 用之略側面圖。 【主要元件符號說明】 40 :光阻劑塗佈單元（CT) 7 5 :噴嘴升降機構 76 :承載台 77 :噴嘴高度位置校正部 7 8 :光阻劑噴嘴 84 :基板搬送部 85 :搬入用頂升銷升降部 8 6 :搬入用頂升銷 88 :噴出口 90 :吸引口 9 1 :搬出用頂升銷升降部 92 :搬出用頂升銷 93 :光阻劑供應源 1 0 0 :搬送驅動部 1 0 2 :保持部 104 :吸附墊 134 :壓縮空氣供應機構 1 3 6 :真空機構 1 3 8 :承載台基板浮起部 1 4 4 :水平棒 -36- 1305933 1 5 4 :壓電促動器 166 :壓力感測器 1 7 0 :控制電路 1 7 2 :驅動電路 1 8 0 :控制器 Μ 1 :搬入區域 Μ 3 :塗佈區域 Μ 搬出區域The individual operation and overall operation (sequence) of the lifting and lowering unit 85, the lifting/elevating pin lifting and lowering unit 91, the compressed air supply mechanism 134, and the vacuum mechanism 136. Next, the photoresist coating unit of the present embodiment will be described. CT) 40 coating process. The controller 180 is incorporated in the main memory, and reads and executes a photoresist coating processing program stored in a memory medium such as a compact disc to perform a series of coating processing operations. When the unprocessed new substrate G is carried into the carry-in area from the transporting device 54 (Fig. 1), the jacking pin 86 receives the substrate G at the forward position. After the conveying device 54 is withdrawn, the jacking pin 86 is lowered and the substrate G is lowered to the height position for conveyance, that is, to the lifting height Ha (Fig. 5). Next, the aligning unit (not shown) operates to press the pressing member (not shown) from the four sides to the substrate G in the floating state, and align the substrate G on the stage 76. When the alignment operation is completed, the pad actuator 109 operates in the substrate transfer unit 84, and the adsorption pad 104 is raised (UP) from the original position (retracted position) to the moving position (joining position). The adsorption pad 104 is vacuumed beforehand, and is bonded to the side edge portion of the substrate G in a floating state by a vacuum suction force. After the adsorption pad 104 is bonded to the side edge portion of the substrate G, the alignment portion retracts the pressing member to a specific position. Next, in the state in which the holding portion 102 holds the side edge portion of the substrate g, the substrate transport unit 84 moves the slider 98 straight forward from the transport start position to the transport direction (X direction) at a relatively high speed. -28- 1305933. When the substrate G is floated on the stage 76 and moved forward in the transport direction, and the tip end portion of the substrate G reaches the set position immediately below the photoresist nozzle 78, the substrate transport unit 84 is attached. The substrate transfer in the first stage is stopped. At this time, the nozzle elevating mechanism 75 is placed at the upper retracted position to allow the photoresist nozzles 7 to stand by. When the substrate G is stopped, the nozzle elevating mechanism 75 is actuated to lower the photoresist nozzle 78 vertically downward, and the distance between the nozzle discharge port and the substrate G or the gap S reaches the setting 値 (for example, 1 00 / / m ) stops the nozzle from lowering. Next, the photoresist supply portion is caused to start to eject the photoresist from the photoresist nozzles 7 toward the upper surface of the substrate G. In this case, it is preferable to first discharge a small amount of the photoresist to completely close the gap S between the nozzle discharge port and the substrate G, and then start discharging at a normal flow rate. On the other hand, the substrate transfer unit 84 starts the substrate transfer in the second stage. This second stage, that is, the substrate transfer at the time of coating, is performed at a constant speed at a relatively low speed. In this manner, in the coating region M; the substrate G is moved in the transport direction (X direction) at a constant speed in a horizontal posture, and the elongated photoresist nozzle 78 is in a strip shape at a constant flow rate. The photoresist R is ejected from the substrate G directly below the substrate G, whereby the coating film RM of the photoresist is formed from the front end side to the rear end side of the substrate G. At least in the coating region M3, the compressed air supply mechanism 134 and the vacuum mechanism 136 are operated such that the positive pressure and the negative pressure of the respective set standards are constantly supplied to the discharge port 88 and the suction port 90. And by the floating control function of the controller 180, the vertical upward pressure applied by the discharge port 88 to the substrate G passing through the coating region M3 is reached, and -29-1305933 is applied by the suction port 90. The balance between the vertically downward pressures makes it possible to make the floating height Hb of the substrate G higher than the other regions', in particular, the floating height Ha of the moving-in region and the floating height He of the carrying-out region M5. Keep it steady. However, in actuality, for example, due to mechanical vibration generated by a blower of a vacuum source or the like, a large amount of vacuum pressure in the vacuum mechanism 136 may cause a variation (generally vibration) as shown in Fig. 16. Once the floating force applied to the substrate G passing through the coating region reaches a stable vacuum pressure or the attraction force changes, the substrate G still has a very small floating upside down (generally several micrometers or less). Amplitude). In this embodiment, when the vacuum pressure in the vacuum mechanism 136 fluctuates, the control circuit 170 of the nozzle height position correcting unit 77 detects the fluctuation of the vacuum pressure by the pressure sensor 166, and generates The variation of the vacuum pressure has a certain response characteristic control signal CS, and drives and controls the piezoelectric actuator 154, and controls the height of the photoresist nozzle 78 by the physical displacement generated by the piezoelectric actuator 154. The position becomes variable. As a result, as shown in FIG. 18, when the substrate G is displaced upward by the fluctuation of the vacuum pressure of the vacuum mechanism 136, the displacement to the substrate G is In the same timing, the photoresist nozzles 7 are displaced only upwards to almost the same amount of displacement, with the result that the gap S between the photoresist nozzles 78 and the substrate G can be maintained at a set threshold (for example, 1 0 0 // m ). Further, as shown in Fig. 19, when the substrate G is displaced downward from the set floating height Hb in response to the fluctuation of the vacuum pressure of the vacuum mechanism 136, the displacement with the substrate G is Phase-30-1305933 In the same machine, the photoresist nozzle 78 is only displaced downward to an almost displacement amount, so that the gap S between the photoresist nozzle 78 and the substrate G can still be maintained at the set threshold (for example, 100 μ m ) ° In this way, even in the coating process, even if the vacuum pressure for achieving the high precision of the floating force or the floating height passing through the coating zone is changed, the attraction force is changed, and the substrate G is made. The upper and lower floats are generated, and the gap S between the resist nozzle 78 and the substrate G can be maintained at the set 値 (100 M m ), so that the discharge port of the strip-shaped photoresist nozzle 78 can be used under a certain diffusion characteristic. When the photoresist R is applied to the substrate, a photoresist coating film having a uniform film thickness is obtained. When the coating process in the coating region M3 is completed, when the rear end portion of the plate G passes directly under the photoresist nozzle 78, the light supply source 93 ends the photoresist from the photoresist nozzle 78. At the same time as the discharge of R, the function of the nozzle height position correcting unit 77 is stopped. Instead, the nozzle elevating mechanism 75 is operated to raise the photoresist spray D vertically upward and to retreat from the substrate G. On the other hand, the "feeding unit 84" switches to the third stage of the basic transport with a relatively high transport speed. Thereafter, when the substrate G reaches the transport end in the carry-out area M5, the substrate transport unit 84 stops the substrate transfer in the third stage. The pad adsorption control unit 1 1 5 stops the supply of the vacuum to the adsorption pad 104, and the pad actuator 109 makes the adsorption pad 104 from the forward position (joining position) to the original position (retracted position), so that the adsorption pad 104 is separated from the end of the substrate G. At this time, the pad adsorption control unit 1 15 supplies the positive pressure air to the adsorption pad 104 to increase the separation from the substrate G. The same inter-I m3 force or light is, for example, from G on the base resist. After the I 78 plate is moved to the position, the two sides are lowered at the same time (the -31 - 1305933 of the pressing pair, the lifting pin 92 is used to start the substrate G from the original position below the carrying platform for unloading to the upper of the carrying platform. Then, the unloading machine or the unloading arm 74 is close to the carry-out area M5, receives the substrate G from the top lifting pin 92, and carries it out to the outside of the carrying table 76. Once the substrate G is transferred to the jacking pin 92 Then, the substrate transfer unit 84 immediately pulls the substrate G back to the carry-in area at a high speed. When the substrate G that has finished the above process in the carry-out area M5 is carried out, the next piece should be subjected to the coating process in the carry-in area Mh. The new substrate G is carried in, and the alignment and the transfer start are started. As described above, in this embodiment, the carry-in area, the application area M3, and the carry-out area M5 are separately provided on the stage 76, and sequentially The substrate is transferred to each of the regions, and the substrate is sequentially transferred to each of the regions, and the substrate loading operation, the photoresist supply operation, and the substrate unloading operation are performed independently or in parallel, thereby moving one substrate to the substrate. The required time (Tin) for the operation to be loaded on the stage 76, the required time (Tc) for the operation of transporting from the carry-in area Mi to the carry-out area M5 on the stage 76, and the carry-out from the carry-out area M5 The required time (Tc + Tin + Tout) of one cycle of the coating process after the required time of the action (Tout) can further shorten the process time. Further, the spray from the upper surface of the carrying table 76 is used. The pressure of the gas ejected from the outlet 88 causes the substrate G to float in the air, and the photoresist G is supplied from the long strip-shaped photoresist nozzle 78 while transporting the floating substrate G on the carrier 76. It is applied to the substrate and can be smoothly and efficiently corresponding to the enlargement of the substrate. -32 - 1305933 Further, the substrate G passes through the coating region Ms of the carrier 76, even if it is received from the suction port 90. The downward pressure (the attraction is changed, and the substrate G can be floated up and down at the same time due to the fluctuation, and the photoresist nozzles 7 are also floated up and down. This allows the photoresist nozzle 78 and the substrate G to be floated. The gap between the S is stable in the setting 値A certain film photoresist coating film having no coating corrugation is formed on the substrate G. The above describes a preferred embodiment of the present invention, but the present invention is not limited to the above embodiment, and is within the scope of the technical idea. For example, the holding portion of the substrate conveying portion 84 of the above-described embodiment has a vacuum suction type pad 104, but may be a pad for a side edge portion of the plate G by a mechanical type. The mechanism (the pad support portion 106, the descending member 108, and the pad actuator 109) that is detachably coupled to the side edge portion of the substrate G can be used in various ways. The substrate transfer unit 84 of the embodiment is configured to hold the left and right side edge portions of the substrate and transport the substrate, but the substrate can be transported by holding only one side edge portion of the substrate G. In addition, various installation positions of the pressure sensor 16 6 can be selected, and the vacuum pressure in the vacuum mechanism 136 can be measured, for example, the vacuum pressure in the vicinity of the upper manifold 159 in the load bearing can be detected. Further, in the nozzle height correction unit 77, the circuit configuration, the signal processing method, and the like of the control circuit 170 can be variously modified, and the piezoelectric drive can be replaced with another small drive. The actuator (for example, the voice-activated coil is used to drive the middle force), the holder of the pad is raised to the side of the G by holding the thick parallel type 102, and the checker is at the position of the 76-degree position actuator - 33 - 1305933. The deformation. The above embodiment is a photoresist coating device for a coating development processing system for LCD manufacturing, but the present invention is also applicable to any processing device and application for supplying a processing liquid to a substrate to be processed. Therefore, the treatment liquid of the present invention may be a coating liquid such as an interlayer insulating material, a dielectric material or a wiring material in addition to the photoresist, or may be a developing solution or a rinse liquid. The substrate to be processed of the present invention is not limited to the LCD substrate, and may be another substrate for a flat display, a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed circuit board, or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the configuration of a coating development processing system applicable to the present invention. Fig. 2 is a flow chart showing the processing steps of the coating development processing system of the embodiment. Fig. 3 is a schematic plan view showing the overall configuration of a photoresist coating unit and a reduced-pressure drying unit of a coating development processing system of an embodiment. Fig. 4 is a perspective view showing the overall configuration of a photoresist coating unit of an embodiment. Fig. 5 is a front elevational view showing the overall configuration of a photoresist coating unit of an embodiment. Fig. 6 is a plan view showing an example of an arrangement pattern of the discharge port and the suction port of the stage application region of the embodiment. Fig. 7 is a side elevational view, partly in section, of the structure of the substrate transfer-34-1305933 of the photoresist coating unit of the embodiment. Fig. 8 is an enlarged cross-sectional view showing the configuration of a holding portion of a substrate conveying portion of the photoresist coating unit of the embodiment. Fig. 9 is a perspective view showing a configuration of a pad portion of a substrate transfer portion of a photoresist coating unit of an embodiment. Fig. 10 is a perspective view showing a modification of the holding portion of the substrate conveying portion of the photoresist coating unit of the embodiment. Fig. 1 is a cross-sectional view showing the configuration of a discharge control unit of a photoresist coating unit of an embodiment. Fig. 1 is a partial cross-sectional view showing the configuration of a flow path inside the stage of the photoresist coating unit of the embodiment. Fig. 1 is a view showing the configuration of the nozzle lifting mechanism, the nozzle height position correcting portion, and the vacuum mechanism of the photoresist coating unit of the embodiment. Fig. 14 is a side elevational view, partly in section, of the mechanical system of the nozzle height position correcting unit of the photoresist coating unit of the embodiment. Fig. 15 is a block diagram showing the configuration of a signal processing system of the nozzle height position correcting unit of the photoresist coating unit of the embodiment. Fig. 16 is a waveform diagram showing the relationship between the variation of the vacuum pressure in the vacuum mechanism of the photoresist coating unit of the embodiment and the displacement of the photoresist nozzle. Fig. 17 is a block diagram showing the configuration of a control system of the photoresist coating unit of the embodiment. Fig. 18 is a schematic side view showing the action of the nozzle height position correcting portion of the embodiment. -35- 1305933 Fig. 19 is a side view showing the action of the nozzle height position correcting portion of the embodiment. [Description of main component symbols] 40: photoresist coating unit (CT) 7 5 : nozzle lifting mechanism 76 : carrier 77 : nozzle height position correcting unit 7 8 : photoresist nozzle 84 : substrate conveying unit 85 : for loading Top lift pin lifting unit 8 6 : Carrying up jacking pin 88 : Outlet port 90 : Suction port 9 1 : Carrying out jacking pin lifting part 92 : Carrying out jacking pin 93 : Photoreceptor supply source 1 0 0 : Transport Drive unit 1 0 2 : Hold unit 104 : Adsorption pad 134 : Compressed air supply mechanism 1 3 6 : Vacuum mechanism 1 3 8 : Carrier base plate floating portion 1 4 4 : Horizontal bar - 36 - 1305933 1 5 4 : Piezoelectric Actuator 166: Pressure sensor 1 7 0 : Control circuit 1 7 2 : Drive circuit 1 8 0 : Controller Μ 1 : Carry-in area Μ 3 : Coating area 搬 Carry-out area