TWI491451B - A substrate heating apparatus, a liquid material coating apparatus provided with the apparatus, and a substrate heating method - Google Patents

Description

Substrate heating device, liquid material coating device and substrate heating method therewith

The present invention relates to a substrate heating device that heats a substrate coated with a liquid material, a coating device including the device, and a substrate heating method. More particularly, the present invention relates to a substrate heating device that does not cause damage to a substrate and a wafer placed thereon until the bottom filling step is completed in the underfill step of the semiconductor package, a coating device including the device, and a substrate heating method. .

Further, in the present specification, a substrate on which a workpiece such as a semiconductor wafer is placed may be simply referred to as a substrate.

Among the semiconductor chip mounting technologies, there is a technique called a flip chip method. In the flip chip method, a bump electrode is formed on the surface of the semiconductor wafer 1, and is directly connected to the electrode pad on the substrate 2.

In the flip chip package, in order to prevent the stress generated by the difference in thermal expansion coefficient between the semiconductor wafer 1 and the substrate 2 from being concentrated on the connection portion 3, the connection portion 3 is broken, and the gap between the semiconductor wafer 1 and the substrate 2 is filled. The resin 4 is used to reinforce the joint portion 3. This step is called underfill (refer to Figure 1).

The underfill step is performed by applying the liquid resin 4 along the outer periphery of the semiconductor wafer 1 and filling the gap between the semiconductor wafer 1 and the substrate 2 by capillary action, and then performing the process using an oven or the like. Heating causes the resin 4 to harden.

In recent years, the miniaturization and thinning of products have been further developed. With this development, the semiconductor wafer 1 and the substrate 2 of the flip chip type have been developed to be smaller and thinner. When the size is small and thin, heat is easily transferred to the semiconductor wafer 1 and the substrate 2, so that it is easily affected by the ambient temperature, and the connection portion 3 is easily broken by the stress caused thereby. Therefore, in order to reliably strengthen the underfill step and reduce the viscosity of the resin, the substrate can be heated to facilitate filling.

For example, Patent Document 1 discloses a substrate heating apparatus which heats a substrate by spraying a heated gas, and is characterized in that it includes a heating unit having a bottom surface facing the substrate and protruding upward. a protruding portion, wherein a gas flow path is formed, one end of the gas flow path communicates with a discharge hole formed on the upper surface of the protruding portion, and the other end communicates with the gas supply portion; and the gas heating means flows in the gas flow path The gas is heated; the opening and closing valve opens or closes the inflow of the gas into the gas flow path; and the valve control unit heats the substrate to the target temperature by controlling the opening and closing operation of the opening and closing valve.

Further, Patent Document 2 discloses a method of mounting an electronic component in which an electric charge is applied to an IC wafer when a resin is injected between an IC wafer and a substrate in an underfill step, so that the heated hot plate is only in contact with each other. The IC wafer or only the vibration is applied to the IC wafer, whereby the viscosity of the resin between the IC wafer and the substrate is lower than that of the resin at other portions.

Patent Document 3 discloses a semiconductor device manufacturing apparatus including a coating stage on which a tape-type automatic bonding (TAB) tape having a semiconductor wafer mounted thereon is mounted, and is applied to a semiconductor wafer and The resin device is supplied between the TAB tapes, and the semiconductor device manufacturing device is characterized by having a heating means for heating the semiconductor wafer and the TAB tape on the coating table.

[Advanced technical literature] [Patent Literature]

Patent Document 1: Japanese Patent Laid-Open Publication No. 2006-314861

Patent Document 2: Japanese Patent Laid-Open Publication No. 2005-45284

Patent Document 3: Japanese Patent Laid-Open Publication No. 2007-227558

As described in each of the above-mentioned patent documents, a substrate heating apparatus that performs substrate heating only at the time of coating has existed before. However, within the scope of the Applicant's knowledge, there is no means for performing substrate heating before and after coating. In other words, the conventional substrate heating apparatus has a problem that the temperature change during the application and the conveyance is large due to the non-heating state during the conveyance before and after the application, and the change in the stress due to the difference in the thermal expansion coefficient is changed. Large, so the connection is easily broken.

Accordingly, an object of the present invention is to provide a substrate heating apparatus capable of reducing a temperature change of a substrate on which a semiconductor wafer is placed before and after a coating operation, and preventing damage of the connection portion, a coating apparatus including the same, and a substrate Heating method.

According to a first aspect of the invention, there is provided a substrate heating apparatus for heating a substrate which is conveyed in one direction from a lower side and which is applied to a workpiece disposed thereon during transport, and is characterized in that: The member includes a flat upper surface that abuts against a bottom surface of the substrate to heat the substrate, and a discharge opening formed on the upper surface to discharge a heating gas to the bottom surface of the substrate, and an elevating mechanism that elevates and lowers the heating member.

According to a second aspect of the invention, the heating member includes a suction opening for causing an attraction force to act on a bottom surface of the substrate, and an attraction force is exerted from the suction opening at a rising position of the lifting mechanism And actuating, the upper surface of the heating member is in contact with the bottom surface of the substrate to heat the substrate, and the heated gas is ejected from the ejection opening to lower the substrate at the lowering position of the elevating mechanism.

According to a second aspect of the invention, the discharge opening and the suction opening are formed by the same opening, and the opening is connected to the negative pressure source and the pressurized source via a switching valve.

The invention of any one of the first to third invention, wherein the plurality of openings are present.

According to a fifth aspect of the invention, the plurality of heating members are continuously disposed in a conveying direction of the substrate.

According to a fifth aspect of the invention, the heating member is configured by a plurality of types of heating blocks having different lengths.

According to a seventh aspect of the invention, a liquid material coating apparatus comprising: the substrate heating apparatus according to any one of the first to sixth aspects; the discharge apparatus for discharging the liquid material; and the driving of the relative discharge of the discharge apparatus relative to the substrate a mechanism; a transport mechanism that transports the substrate in one direction; and a control unit that controls the operations.

According to a seventh aspect of the invention, the control unit is configured to cause the lifting mechanism to be in a raised position when the workpiece is placed on the substrate, and to bring the upper surface of the heating member into contact with the bottom surface of the substrate. At the time of the substrate, the elevating mechanism is placed at the lowered position, and the heated gas is ejected from the ejection port.

According to a ninth aspect of the invention, there is provided a substrate heating method for heating a substrate which is conveyed in one direction from a lower direction and which is applied to a workpiece disposed thereon during transport, and is characterized in that: a heating step of abutting the flat upper surface of the heating member against the bottom surface of the substrate by the lifting mechanism to heat the substrate; and a non-contact heating step of the bottom surface of the substrate and the heating member by the lifting mechanism The above-mentioned upper surface is separated, and a heating gas is ejected from the discharge opening formed on the upper surface of the heating member.

According to a ninth aspect of the invention, in the contact heating step, the suction force is formed from the suction opening formed on the upper surface of the heating member.

According to a tenth aspect of the invention, the discharge opening and the suction opening are formed by the same opening, and the opening is connected to the negative pressure source and the pressure source via a switching valve; and in the contact heating step The opening is communicated with the source of negative pressure; and in the non-contact heating step, the opening is communicated with the source of pressure.

According to a twelfth aspect of the invention, in the invention of the present invention, in the coating operation of the workpiece disposed on the substrate, the contact heating step is performed, and when the substrate is transported, the non- Contact heating step.

A thirteenth invention is the twelfth invention, wherein the non-contact heating step is performed after the coating operation.

A fourteenth or thirteenth invention, wherein the coating operation is an underfilling step.

According to a fourteenth aspect of the invention, in the contact heating step and the non-contact heating step, the entire bottom surface of the substrate is uniformly heated. The connection portion can be more effectively protected by uniformly heating the entire bottom surface of the substrate.

The substrate heating device of the present invention will be described below from other viewpoints.

The substrate heating device of the present invention is disposed below the transfer mechanism that transports the substrate coated with the liquid material, and heats the substrate, and includes a flow path, one end of which is connected to the flow port, and the other end is connected to the flow port. One end is connected to a switching valve for switching communication between the negative pressure source and the pressurized source; the heating block is provided with the flow port on the surface facing the substrate, and the flow path is provided therein; Provided in the heating block, heating the heating block and heating the gas in the flow path; and a temperature sensor disposed in the heating block to detect the temperature of the heating block a temperature control unit that controls the heater based on a signal from the temperature sensor, and an elevating mechanism that contacts the bottom surface to support a rising position of the substrate when the liquid material is applied, and the heating when the substrate is transported The heating block is moved up and down between the falling position of the block facing the substrate and the falling surface of the substrate.

Preferably, when the heating block is located at the rising position, the heating block is connected to the negative pressure source by the switching valve, and the gas is sucked from the flow port, and the substrate supported by the bottom surface is adsorbed on the heating block. a heating block is in contact with the substrate to heat the substrate; and when located at the lowering position, the switching valve is connected to the pressurized source, so that the gas in the flow path heated by the heater is directed from the flow port The bottom surface of the substrate at a position where the heating block is separated is ejected, thereby heating the substrate. More preferably, a plurality of the flow ports are formed in the heating block, and a plurality of the flow paths are provided therein.

Further, preferably, the flow path is divided into a first flow path and a second flow path, wherein one end of the first flow path is connected to the first flow port, and the other end is connected to the first switch for communication with the negative pressure source. a valve, one end of the second flow path is connected to the second flow port, and the other end is connected to a second valve for switching communication with the pressurized source; the heating block is provided with the first surface facing the opposite side of the substrate The flow port and the second flow port are provided with the first flow path and the second flow path. Preferably, the heating block is connected to the negative pressure source by the first valve when the heating block is located at the rising position, and attracts gas from the first flow port, and is adsorbed from the bottom surface to be supported by the heating block. In the substrate, the heating block is brought into contact with the substrate to heat the substrate; and when located at the lowering position, the second valve is connected to a pressurized source to be heated in the second flow path heated by the heater The gas is ejected from the second flow port toward the bottom surface of the substrate existing at a position separated from the heating block, thereby heating the substrate. Further preferably, the plurality of first flow ports and the second flow ports are formed in the heating block, and a plurality of the first flow paths and the second flow paths are provided therein.

The coating apparatus of the present invention will be described below from other viewpoints.

A coating apparatus according to the present invention includes: any one of the above-described substrate heating devices; a discharge device that discharges a liquid material; a drive mechanism that relatively moves the discharge device relative to the substrate; and is disposed in the coating device and transports the substrate a transport mechanism; and a control unit that controls the operations. Preferably, the transport mechanism is divided into a plurality of portions, and a plurality of the substrate heating devices are provided corresponding to the plurality of portions of the transport mechanism.

According to the present invention, since the heating is performed not only at the time of coating but also at the time of transporting before and after the coating, for example, in the underfill step, the temperature change of the substrate on which the semiconductor wafer is placed is extremely small, and the connection portion can be prevented from being damaged.

Further, since the temperature change of the substrate can be made extremely small during the coating operation, the state of the liquid material is stabilized, and the coating can be stably performed.

Further, since two different heating methods can be implemented by one heating means, any heating at the time of application and at the time of non-application (transportation) can be handled by one heating means. Therefore, miniaturization of the device can be achieved.

An embodiment of the present invention will be described by taking an example in which an underfill step is performed on a substrate on which a semiconductor wafer is placed.

[heating mechanism body]

A schematic perspective view of the substrate heating mechanism 105 of the present invention is shown in Fig. 2 . Moreover, the main part sectional view and the block diagram are shown in FIG. 3 and FIG. 4, respectively.

The heating block 11 which is a main portion of the heating mechanism 105 of the present embodiment has a substantially rectangular parallelepiped shape, and the upper surface 12 facing the substrate has a surface which is substantially the same as the size of the substrate 2.

On the upper surface 12, a plurality of first flow ports 13 and a plurality of second flow ports 14 are evenly arranged at regular intervals. Here, the arrangement of the flow ports 13 and 14 shown in FIG. 2 is only an example, and the arrangement can be appropriately changed. However, in the embodiment of the present embodiment, the entire substrate 2 can be made from the viewpoint of protecting the connection portion. The bottom surface has no temperature difference and is evenly arranged.

The plurality of first flow ports 13 are suction openings that communicate with the heating block 11 A plurality of first flow paths 15 are provided in the middle. Further, the plurality of second flow ports 14 are discharge openings that communicate with the plurality of second flow paths 16 provided in the heating block 11, respectively. The plurality of first flow passages 15 pass through the upper pipe joint 25 and communicate with the negative pressure source 19 via the first valve 17, and the plurality of second flow passages 16 pass through the lower pipe joint 25 and pass through the second valve 18 The pressurized source 20 is in communication. By opening and closing the first valve 17 and the second valve 18, the gas in the flow path (15, 16) can be sucked or the gas can be ejected into the flow path. Here, the first valve 17 and the second valve 18 are preferably disposed at portions different from the heating block 11. Further, the first valve 17 and the second valve 18 may be provided in plural depending on the strength of the negative pressure source 19 and the pressurized source 20. Air is used as the actuating gas in the flow paths (15, 16). However, the present invention is not limited thereto. For example, in the case where the inert gas is preferable, nitrogen gas or the like may be used.

The heater 21 is disposed inside the heating block 11 to heat the gas in the heating block 11 and the second flow path 16. In the present embodiment, the electric heater is used for the heater 21. However, the present invention is not limited thereto, and for example, a peltier device or the like may be used. Further, the number of heaters to be provided may be several, and the arrangement thereof may be appropriately changed. However, from the viewpoint of protecting the connection portion, it is preferable to use a number and arrangement in which the temperature difference is not generated across the entire bottom surface of the substrate 2.

Further, together with the heater 21, a temperature sensor 22 is provided inside the heating block 11. Further, the heater 21 and the temperature sensor 22 are connected to the temperature control unit 23, and the temperature control unit 23 controls the heater 21 based on the signal from the temperature sensor 22 so that the temperature thereof is constant. The control method is not particularly limited, and a PID (Proportional Integral) which is often used in temperature control can be used. Derivative, proportional, integral, derivative control, general feedback control, and easy turn-on. Disconnect control, etc. Furthermore, the configuration and the number of the temperature sensors 22 can be applied as appropriate.

The substrate 2 is transported in one direction by the transport mechanism 104. The transport mechanism 104 includes two rail-shaped members 109 with a heating mechanism 105 disposed therebetween. The heating block 11 as a main part of the heating mechanism 105 is placed on the elevating mechanism 24 (refer to Fig. 2). The elevating mechanism 24 has a raised position that supports the substrate 2 above the heating block 11 from the bottom surface, and a lowered position where the heating block 11 is separated from the substrate 2. In the raised position, the substrate 2 is sandwiched and fixed by the hook substrate pressing member 106 and the upper surface 12 of the heating block.

As the means for driving the elevating mechanism 24, for example, a cylinder that drives a piston by a compressed gas or a combination of a motor and a ball screw can be used. When the liquid material 4 is applied, the heating block 11 moves to the rising position, and the substrate 2 is supported from the bottom surface, thereby functioning as a coating stage. On the other hand, at the time of substrate transfer, the heating block 11 moves to the lowering position away from the substrate 2 so that the substrate can be smoothly conveyed. In order to effectively maintain the temperature of the substrate by the heating gas, the distance between the upper surface 12 of the heating block and the bottom surface of the substrate 2 is preferably not too far apart, for example, several mm. The details of the transport mechanism 104 will be described in the embodiments.

[heating state]

The heating state of the heating mechanism 105 of the present invention is roughly classified into two types according to the position of the heating block 11.

[1] Heating at the rising position (Fig. 5)

When the heating block 11 is in the raised position, the first valve 17 communicates with the first flow path 15 and the negative pressure source 19 in the heating block 11. Thereby, the first flow path 15 in the heating block 11 and the first flow port 13 communicating with the other end are sucked into the gas (refer to the arrow of the element symbol 26). The substrate 2 is present immediately above the first flow port 13, and the substrate 2 is adsorbed by the suction from the first flow port 13, so that the upper surface 12 of the heating block is in close contact with the bottom surface of the substrate 2. Thus, the bottom surface of the substrate 2 is in contact with the upper surface 12 of the heating block, so that heat from the heater 21 is directly and rapidly conducted via the heating block 11. Further, the temperature control unit 23 controls the heater 21 so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant.

According to the above heating method, since the upper surface 12 of the heating block abuts against the bottom surface of the substrate 2, heat from the heater 21 can be efficiently conducted, and the temperature of the substrate 2 can be stably controlled. The stable temperature control not only prevents breakage of the joint portion 3, but also stabilizes the state of the liquid material 4 to stabilize the coating. Further, since the plurality of first flow ports 13 formed in the surface 12 facing the substrate can be uniformly adsorbed, the substrate 2 can be similarly contacted, and the flatness of the substrate 2 can be maintained.

[2] Heating at the descending position (Fig. 6)

When the heating block 11 is in the lowered position, the second valve 18 communicates with the second flow path 16 in the heating block 11 and the pressurized source 20. Thereby, the gas (27) is ejected from the second flow path 16 in the heating block 11 and the second flow port 14 communicating with the other end. Since the second flow port 14 is separated from the substrate 2, gas is ejected toward the bottom surface of the substrate 2. The ejected gas is heated by the heater 21 in the heating block 11, and the substrate 2 is heated by the heated gas. Further, the temperature control unit 23 controls the heater 21 so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant.

According to the above heating method, the heated gas is ejected from the leaving portion, so that heat is also conducted on the moving substrate 2. That is, the temperature of the substrate 2 in motion can also be controlled, so that the temperature variation in the underfill step can be made extremely small. Further, since the heated gas is ejected from the plurality of second flow ports 14 which are formed over the surface 12 facing the substrate, the entire substrate 2 can be heated.

By appropriately combining the above [1] and [2], the temperature of the substrate 2 in the underfill step can be maintained even when the substrate 2 is stopped and the substrate 2 is moved and transported. Therefore, damage to the connection portion 3 of the semiconductor wafer 1 and the substrate 2 can be prevented. The heating at the lowering position of the above [2] is preferably carried out before the coating operation step. The heating before the coating operation step is preheated, and the heating after the coating operation step is performed by suppressing the temperature change of the substrate within a predetermined range and maintaining the heating.

In the above description, the configuration in which the bottom surface of the substrate 2 is brought into contact with the upper surface 12 of the heating block by applying the suction force to the first flow port 13 has been described, and the first flow port 13 may not be provided. Further, in combination with the substrate pressing member 106 and the elevating mechanism 24, the substrate 2 is brought into contact with the upper surface 12 of the heating block. However, in the case where the bottom surface of the substrate is processed with high precision, It is possible to obtain a function of allowing the suction force to function, so that the upper surface of the heating block can be adsorbed so as to be in the same manner as the bottom surface of the substrate. Therefore, the contact area is increased, and the effect of efficiently conducting heat can be obtained. Further, when the upper surface 12 of the heating block is used as the coating table, the flatness of the substrate 2 can be improved, and the coating accuracy can be improved. These effects are particularly remarkable in the case where the substrate 2 is thin. On the other hand, in the configuration in which the substrate pressing member 106 is sandwiched by the substrate opening without providing the flow port for causing the suction force to act, the central portion of the substrate is warped.

For the above reasons, it is preferable to adopt a configuration in which the heating block 11 is provided with a flow port for causing an attractive force to function.

Hereinafter, the details of the present invention will be described by way of examples, but the present invention is not limited by the examples.

[Example 1] [Coating device]

As shown in Fig. 7, the coating apparatus 101 of the present embodiment includes a discharge device 102, a drive mechanism 103, a conveyance mechanism 104, a heating mechanism 105, and a control unit 124 that controls the same.

The discharge device 102 includes a storage container 107 (not shown) that stores the liquid material 4, and a nozzle 108 (see FIG. 1) for discharging the liquid material 4. The discharge device 102 is attached to the XYZ drive mechanism 103 so that the nozzle 108 and the application surface of the application target substrate 2 face each other, and can be moved to the application target substrate 2 transported by the transport mechanism 104.

The transport mechanism 104 is provided across the width of the coating device 101, and is constituted by three transport units (114, 115, 116), and can be independently operated. Since the transport mechanism 104 is constituted by three transport units, the loading and unloading operations can be performed separately when the coating operation is being performed, and the processing time of the steps can be shortened. As shown in FIG. 8, the conveying mechanism 104 of the present embodiment has a structure in which two rail-shaped members 109 spanning the width of the substrate 2 to be conveyed are provided in parallel, and is disposed above the rail-shaped member 109 at the roller 110. The conveyor belt 111 is rotated under the action. The roller 110 is rotationally driven, whereby the conveyor belt 111 rotates, and the substrate 2 placed on the conveyor belt 111 is conveyed. The width of the two rail-shaped members 109 can be changed in accordance with the size of the substrate 2. Here, as shown by the arrow in FIG. 7 , the substrate 2 is carried into the coating device 101 from the left conveying mechanism 114 , and is carried out from the right conveying mechanism 116 to the outside of the coating device 101 via the center conveying mechanism 115 .

The heating mechanism 105 is composed of three heating units (121, 122, 123). Each of the heating units is disposed between the two rail-shaped members 109 constituting the conveying mechanism 104 in accordance with the conveying unit (114, 115, 116). The heating means 105 is constituted by three heating means, whereby the heating of the substrate 2 can be performed in accordance with the respective conveying operation.

Since the heating block 11 is substantially the same size as the substrate 2, there is a case where the heating unit is not provided in the space of the size of the substrate 2 such as the loading side and the carrying-out side. Therefore, in the present embodiment, the configuration is such that an auxiliary heating unit (118, 119, 120) which is smaller than the heating unit is provided. The difference from the above heating unit is that the auxiliary heating unit is fixed at a lowering position away from the substrate 2 without performing the lifting movement, and the first flow port 13 is not provided and only the heated gas is ejected from the second flow port 14. . The size of the auxiliary heating unit (118, 119, 120) may be any size that can be buried between the three heating units (121, 122, 123), and can be appropriately changed. In the present embodiment, the auxiliary heating unit 118 is provided at the position of the loading unit, the auxiliary heating unit 119 is disposed at a position between the central heating unit 122 and the right heating unit 123, and the auxiliary heating is provided at the position of the carrying unit. Unit 120.

The set temperature of the heating mechanism 105 varies depending on the size of the substrate 2, the number of the semiconductor wafers 1, and the like, but is set substantially in the range of 100 to 150 degrees Celsius. Within this range, it is also possible to control the heating corresponding to the purpose of the preliminary heating, the optimum temperature at the time of coating, and the purpose of maintaining the temperature.

[action]

The operation of the coating apparatus 101 of the present embodiment will be described with reference to Figs. 9 to 12 .

On the left side of the coating apparatus 101, there is a means for supplying a carrier or a pre-step of the uncoated substrate 2. On the right side of the coating apparatus 101, there is a device for recovering the unloader or the subsequent step of the coated substrate 2. Hereinafter, for convenience of explanation, the heating unit and the auxiliary heating unit will be referred to as a stage, respectively.

After the start of the operation, before the substrate 2 is carried into the coating apparatus 101, the temperature of the transfer station 118 and the front desk 121 is read (step 101), and it is determined whether or not the temperature is within the set temperature range (step 102). When the set temperature is not reached, the temperature is read again and the operation is repeated until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 remains on the front desk 121 (step 103). When the substrate 2 remains, it stands by until the substrate 2 is removed. When the substrate 2 is not left, the gas from the transfer station 118 and the front office 121 is started to be ejected (step 104). Then, the substrate 2 is transported to the position of the foreground 121 (step 105). When the substrate 2 reaches the position of the front-end 121, the gas from the front-end 121 is stopped, and the front-end 121 rises to support the substrate 2, thereby starting the suction of the front-end 121 to adsorb the fixed substrate 2 (step 106).

After being fixed to the foreground 121, the temperature of the coating stage 122 is read (step 107), and it is determined whether it is within the range of the set temperature (step 108). When the set temperature is not reached, the substrate 2 fixed to the front desk 121 is controlled so that the temperature is constant (step 110), and the temperature is read again, and the operation is repeated until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 remains on the coating table 122 (step 109). When the substrate 2 remains, the substrate 2 fixed to the front surface 121 is controlled so that the temperature thereof is constant (step 110), and is waited until the substrate 2 is removed. When the substrate 2 is not left, the gas from the coating stage 122 is started to be ejected (step 111). Then, the suction of the front desk 121 is cut off, and the front desk 121 is lowered, so that the gas from the front desk 121 is started to be ejected (step 112). Thereafter, the substrate 2 is transferred to the position of the coating stage 122 (step 113). After the substrate 2 reaches the position of the coating stage 122, the gas from the coating table 122 is stopped from being ejected, and the coating stage 122 is raised to support the substrate 2, whereby the suction of the coating stage 122 is started to adsorb the fixed substrate 2 (step 114).

The liquid material 4 is applied to the coating station 122 by the discharge device 102 (step 115). When the coating is completed, the temperature of the intermediate stage 119 and the background 123 is read (step 116), and it is determined whether or not it is within the set temperature range (step 117). When the set temperature is not reached, the substrate 2 fixed to the coating table 122 is controlled so that the temperature is constant (step 119), and the temperature is read again, and the operation is repeated until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 remains on the background 123 (step 118). When the substrate 2 remains, the substrate 2 fixed to the coating table 122 is controlled to have a constant temperature (step 119), and is waited until the substrate 2 is removed. When the substrate 2 is not left, the gas from the intermediate stage 119 and the background 123 is started to be ejected (step 120). Then, the suction of the coating stage 122 is cut, and the coating stage 122 is lowered to start the discharge of the gas from the coating stage 122 (step 121). Thereafter, the substrate 2 is transported to the background 123 position (step 122). After the substrate 2 reaches the position of the background 123, the gas from the background 123 is stopped to be ejected, and the background 123 rises to support the substrate 2, thereby starting the suction of the background 123 and adsorbing the fixed substrate 2 (step 123).

After being fixed in the background 123, the temperature of the docking station 120 is read (step 124), and it is determined whether or not it is within the set temperature range (step 125). When the set temperature is not reached, the substrate 2 fixed to the background 123 is controlled so that the temperature is constant (step 127), and the temperature is read again, and the operation is repeated until the set temperature is reached. When the set temperature is reached, it is determined whether or not the substrate 2 can be carried out of the apparatus 101 (step 126). When it is not possible to carry out, the substrate 2 fixed to the background 123 is controlled so that the temperature is constant (step 127), and it stands by until it can be carried out. When it is possible to carry out, the gas from the outlet station 120 is started to be ejected (step 128). And, the attraction of the background 123 is cut off, and the background 123 is lowered, thereby starting to eject the gas from the background 123 (step 129). Thereafter, the substrate 2 is transported to the outside of the device 101 (step 130).

The above operation indicates the flow of one substrate 2, and of course, the substrate 2 of a plurality of sheets may be continuously applied. In this case, since the operations of steps 101 to 106, step 107 to step 114, step 115 to step 123, and step 124 to step 130 can be performed independently, each action can be performed simultaneously, and the time of the step processing can be shortened.

[Embodiment 2]

In the first embodiment, the flow paths in the heating block 11 are respectively divided into the negative pressure system 15 and the pressurizing system 16, but they may be set as one flow path. Fig. 13 is a cross-sectional view showing the main part of the heating mechanism of the second embodiment, and Fig. 14 is a block diagram thereof.

The heating block 201 of the second embodiment has a substantially rectangular shape, and the upper surface 202 facing the substrate has a surface that is substantially the same as the size of the substrate 2. On the upper surface 202, a plurality of flow ports 203 are uniformly opened at regular intervals. Each of the flow ports 203 communicates with the flow path 204 provided in the heating block 201. The flow path 204 leads to the switching valve 205 provided at a portion different from the heating block 201, and communicates with the negative pressure source 206 and the pressurized source 207 via the switching valve 205. The switching valve 205 is switched to connect one of the negative pressure source 206 or the pressurized source 207 to the flow path 204, thereby sucking the gas in the flow path 204 or ejecting the gas into the flow path. A plurality of switching valves 205 may be provided depending on the pressure strength of the negative pressure source 206 and the pressurized source 207. Further, the heater 21, the temperature sensor 22, the elevating mechanism 24, and the like are the same as those in the first embodiment.

When the heating block 201 is in the raised position, the switching valve 205 communicates with the flow path 204 and the negative pressure source 206 in the heating block 201. Thereby, the flow path 204 in the self-heating block 201 and the flow port 203 which communicates with the other end are inhaled. The substrate 2 is present immediately above the flow port 203, and the substrate 2 is adsorbed by the suction from the flow port 203, so that the upper surface 202 of the heating block is in close contact with the bottom surface of the substrate 2. Thus, since the bottom surface of the substrate 2 is in contact with the upper surface 202 of the heating block, heat from the heater is directly and rapidly conducted via the heating block 201. Further, the temperature control unit 208 controls the heater so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant.

When the heating block 201 is in the lowered position, the switching valve 205 communicates with the flow path 204 and the pressurized source 207 in the heating block 201. Thereby, the flow path 204 in the self-heating block 201 and the flow port 203 which communicates with the other end are ejected. Since the flow port 203 is separated from the substrate 2, gas is ejected toward the bottom surface of the substrate 2. The ejected gas is heated by the heater in the heating block 201, and the substrate 2 is heated by the heated gas. Further, the temperature control unit 208 controls the heater so that the temperature thereof is constant, whereby the temperature of the substrate 2 can be kept constant.

Further, according to the heating block 201 of the present embodiment, the flow path is set as a system, whereby the valve and the piping leading thereto can be reduced, thereby saving space.

1. . . Workpiece (semiconductor wafer)

2. . . Substrate

3. . . Connection part (protruding electrode, electrode pad)

4. . . Liquid resin, liquid material

11, 201. . . Heating block

12, 202. . . Opposite to the substrate (top)

13. . . First flow port (suction opening)

14. . . Second flow port (opening for ejection)

15. . . First flow

16. . . Second flow path

17. . . First valve

18. . . Second valve

19, 206. . . Negative pressure source

20,207. . . Pressurized source

twenty one. . . Heater

twenty two. . . Temperature sensor

23,208. . . Temperature control department

twenty four. . . Lifting mechanism

25. . . Piping connector

26. . . Inhaled gas flow

27. . . Gas stream

101. . . Coating device

102. . . Discharge device

103. . . XYZ drive mechanism

104. . . Transport agency

105. . . Substrate heating mechanism

106. . . Substrate pressing member

107. . . Storage container

108. . . nozzle

109. . . Rail member

110. . . Roll

111. . . Conveyor belt

112. . . Substrate transport direction

113. . . Driving direction

114. . . Left transport unit

115. . . Central transport unit

116. . . Right transport unit

118. . . Left auxiliary heating unit (moving inlet station)

119. . . Central auxiliary heating unit (intermediate stage)

120. . . Right auxiliary heating unit (moving station)

121. . . Left heating unit (front desk)

122. . . Central heating unit (coating table)

123. . . Right heating unit (background)

124. . . Control department

203. . . Circulation

204. . . Flow path

205. . . Switching valve

209. . . Gas flow

Figure 1 is an explanatory diagram illustrating the underfilling step.

Fig. 2 is a schematic perspective view of the heating mechanism of the present invention.

Figure 3 is a cross-sectional view showing the main part of the heating mechanism of the present invention.

Figure 4 is a block diagram of the heating mechanism of the present invention.

Fig. 5 is an explanatory view for explaining a heating state at a rising position of the heating block of the present invention.

Fig. 6 is an explanatory view showing a heating state at a lowered position of the heating block of the present invention.

Fig. 7 is a schematic perspective view of the coating apparatus of the first embodiment.

Fig. 8 is an explanatory view for explaining a conveying mechanism of the coating device of the first embodiment.

Fig. 9 is a flow chart showing the flow of the operation of the coating apparatus of the first embodiment.

Fig. 10 is a flow chart showing the flow of the operation of the coating apparatus of the first embodiment.

Fig. 11 is a flow chart showing the flow of the operation of the coating apparatus of the first embodiment.

Fig. 12 is a flow chart showing the flow of the operation of the coating apparatus of the first embodiment.

Figure 13 is a cross-sectional view showing the main part of the heating mechanism of the second embodiment.

Figure 14 is a block diagram of the heating mechanism of the second embodiment.

11. . . Heating block

12. . . Opposite to the substrate (top)

13. . . First flow port (suction opening)

14. . . Second flow port (opening for ejection)

twenty one. . . Heater

twenty two. . . Temperature sensor

twenty four. . . Lifting mechanism

25. . . Piping connector

105. . . Substrate heating mechanism

Claims (15)

A substrate heating device for heating a substrate that is conveyed in one direction from the lower side and that applies a coating operation to a workpiece disposed thereon during transportation, and includes: a heating member; And a discharge opening that abuts the bottom surface of the substrate to heat the substrate, and a discharge opening formed on the upper surface and discharges a heating gas to the bottom surface of the substrate; and an elevating mechanism that elevates and lowers the heating member; The upper surface is substantially the same width and width as the substrate. The substrate heating device according to claim 1, wherein the heating member has a suction opening on the upper surface of the substrate, and the suction opening is formed from the suction opening at a rising position of the lifting mechanism. The attraction acts to cause the upper surface of the heating member to contact the bottom surface of the substrate to heat the substrate, and the heated substrate is ejected from the ejection opening at a lowering position of the elevating mechanism to heat the substrate. The substrate heating device according to claim 2, wherein the discharge opening and the suction opening are formed by the same opening, and the opening is connected to the negative pressure source and the pressurized source via a switching valve. The substrate heating device of claim 1 or 2, wherein the opening has a plurality of openings. The substrate heating device according to claim 1 or 2, wherein the plurality of heating members are continuously disposed in a conveying direction of the substrate. The substrate heating device of claim 5, wherein the heating member is composed of a plurality of types of heating blocks having different lengths. A liquid material coating device comprising: the substrate heating device of claim 1 or 2; a discharge device for discharging the liquid material; a drive mechanism for relatively moving the discharge device relative to the substrate; a transport mechanism that transports in one direction; and a control unit that controls the operations. The liquid material application device according to claim 7, wherein the control unit causes the lifting mechanism to be in a raised position and the upper surface of the heating member to contact the substrate when the workpiece is placed on the substrate. On the bottom surface, when the substrate is transferred, the elevating mechanism is placed at the lowered position, and the heated gas is ejected from the ejection port. A substrate heating method for heating a substrate that is conveyed in one direction from the lower side and that applies a coating operation to a workpiece disposed thereon during transportation, and includes: a contact heating step Providing the heating member to have a flat upper surface having a width and a width substantially equal to the size of the substrate abutting on the bottom surface of the substrate by the elevating mechanism, thereby heating the substrate; and a non-contact heating step by the lifting mechanism The bottom surface of the substrate is separated from the upper surface of the heating member, and a heating gas is ejected from a discharge opening formed in the upper surface of the heating member. A substrate heating method according to claim 9 of the patent application, wherein In the contact heating step, the suction force is applied from the suction opening formed on the upper surface of the heating member. The substrate heating method according to claim 10, wherein the discharge opening and the suction opening are formed by the same opening, and the opening is connected to a negative pressure source and a pressurized source via a switching valve; In the contact heating step, the opening is communicated with a source of negative pressure; and in the non-contact heating step, the opening is communicated with a source of pressure. The substrate heating method according to claim 9 or 10, wherein the contact heating step is performed when a workpiece placed on the substrate is applied, and the non-contact heating step is performed when the substrate is transferred. The substrate heating method of claim 12, wherein the non-contact heating step is performed after the coating operation. The substrate heating method of claim 12, wherein the coating operation is an underfill step. The substrate heating method according to claim 14, wherein in the contact heating step and the non-contact heating step, the entire bottom surface of the substrate is uniformly heated.