JP2010016252A - Substrate heating apparatus, liquid material applying apparatus with the same, and substrate heating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate heating apparatus that reduces a temperature change of a substrate with a semiconductor chip mounted thereon and can prevent breakage of connections before and after an applying operation, to provide an applying apparatus with such substrate heating apparatus, and to provide a substrate heating method. <P>SOLUTION: The substrate heating apparatus is provided for heating the substrate from below. The substrate is transferred in one direction, and the applying operation is performed to a work arranged on the substrate while the substrate is transferred. The substrate heating apparatus is characterized by comprising a heating member, which has a flat upper surface abutting to a bottom of the substrate for heating the substrate, and a jetting opening formed on the upper surface for jetting a heating gas onto the bottom of the substrate; and a lift mechanism for bringing up/down the heating member. The liquid material applying apparatus with such substrate heating apparatus, and the substrate heating method are also provided. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to a substrate heating apparatus that heats a substrate to which a liquid material is applied, a coating apparatus including the substrate heating apparatus, and a substrate heating method. In particular, the present invention relates to a substrate heating apparatus that prevents damage to a substrate and a chip placed thereon in a semiconductor packaging underfill process until the underfill process is completed, a coating apparatus including the substrate heating apparatus, and a substrate heating method.
In this specification, a substrate on which a workpiece such as a semiconductor chip is placed may be simply referred to as a substrate.

One of the semiconductor chip mounting techniques is a technique called a flip chip method. In the flip chip method, a protruding electrode is formed on the surface of the semiconductor chip 1 and is directly connected to an electrode pad on the substrate 2.
In the flip chip package, in order to prevent stress generated due to the difference in thermal expansion coefficient between the semiconductor chip 1 and the substrate 2 from being concentrated on the connection portion 3 and breaking the connection portion 3, Resin 4 is reinforced by filling the gap with resin 4. This process is called underfill (see FIG. 1).

In the underfill process, the liquid resin 4 is applied along the outer periphery of the semiconductor chip 1, the resin 4 is filled in the gap between the semiconductor chip 1 and the substrate 2 by utilizing a capillary phenomenon, and then heated in an oven or the like. 4 is cured.
In recent years, products have been further reduced in size and thickness, and accordingly, the semiconductor chip 1 and the substrate 2 in the flip chip system have also been reduced in size and thickness. When the device is small and thin, heat is easily transmitted to the semiconductor chip 1 and the substrate 2, so that it is easily affected by the ambient temperature, and the connection portion 3 is easily broken by the stress generated thereby. Therefore, in order to ensure the reinforcement in the underfill process, the substrate is heated to reduce the viscosity of the resin and facilitate filling.

For example, Patent Document 1 discloses a substrate heating apparatus that heats a substrate by blowing heated gas, and has a protruding portion that protrudes upward toward the bottom surface of the substrate, and one end is a protruding portion. A heating unit in which a gas channel whose other end communicates with the gas supply unit is formed in the blow-out hole opened on the upper surface of the gas, a gas heating means for heating the gas flowing in the gas channel, and a gas to the gas channel There is disclosed a substrate heating apparatus comprising an opening / closing valve for turning on / off the inflow of the substrate and a valve controller for heating the substrate to a target temperature by controlling the opening / closing operation of the opening / closing valve.
Further, in Patent Document 2, when injecting resin between an IC chip and a substrate in an underfill process, the IC chip is energized and a heated plate heated only to the IC chip is contacted, or the IC An electronic component mounting method is disclosed in which the viscosity of the resin between the IC chip and the substrate facing each other is made lower than the viscosity of the resin at other portions by applying vibration only to the chip.
Patent Document 3 discloses a semiconductor device manufacturing apparatus that has a coating stage on which a TAB tape on which a semiconductor chip is mounted is placed and supplies resin between the semiconductor chip and the TAB tape. A semiconductor device manufacturing apparatus having a heating means for heating a tape is disclosed.

JP 2006-314861 A Japanese Patent Laid-Open No. 2005-45284 JP 2007-227558 A

As described in each of the above patent documents, there has conventionally been a substrate heating apparatus that heats a substrate only at the time of coating. However, as far as the applicant knows, there is no apparatus for heating the substrate before and after coating. That is, in the conventional substrate heating apparatus, since it is in a non-heated state at the time of conveyance before and after coating, the temperature change between coating and conveyance becomes large, and the change in stress generated due to the above-described difference in thermal expansion coefficient becomes large. For this reason, there is a problem that the connecting portion is easily broken.
Therefore, the present invention provides a substrate heating device that can reduce the temperature change of the substrate on which the semiconductor chip is placed before and after the coating operation and prevent the connection portion from being broken, a coating device including the substrate heating device, and a substrate heating method. The purpose is to do.

1st invention is a board | substrate heating apparatus for heating the board | substrate from which a coating operation | work is performed with respect to the workpiece | work arrange | positioned in the middle of conveyance in one direction, Comprising: The bottom face of the said board | substrate A flat upper surface that heats the substrate, a heating member that is formed on the upper surface and that has a jetting opening for jetting a heating gas on the bottom surface of the substrate, and a lifting mechanism that raises and lowers the heating member; A substrate heating apparatus comprising:
According to a second aspect, in the first aspect, the heating member includes a suction opening that causes a suction force to act on a bottom surface of the substrate on an upper surface thereof, and is sucked from the suction opening at a rising position of the elevating mechanism. A force is applied to heat the substrate by bringing the upper surface of the heating member into contact with the bottom surface of the substrate, and at the lowered position of the elevating mechanism, the heated gas is ejected from the ejection opening to heat the substrate. It is characterized by doing.
According to a third aspect, in the second aspect, the ejection opening and the suction opening are configured by the same opening, and the opening is connected to a negative pressure source and a pressure source via a switching valve. Features.
According to a fourth invention, in any one of the first to third inventions, there are a plurality of the openings.
A fifth invention is characterized in that, in any one of the first to fourth inventions, the plurality of heating members are continuously arranged in the transport direction of the substrate.
According to a sixth invention, in the fifth invention, the heating member includes a plurality of types of heating blocks having different lengths.

A seventh invention is a substrate heating device according to any one of the first to sixth inventions, a discharge device that discharges the liquid material, a drive mechanism that moves the discharge device relative to the substrate, and the substrate It is a liquid material application apparatus provided with the conveyance mechanism which conveys these in one direction, and the control part which controls these operation | movement.
According to an eighth invention, in the seventh invention, when the control unit performs a coating operation on a workpiece arranged on the substrate, the upper surface of the heating member is brought into contact with the bottom surface of the substrate with the elevating mechanism as the raised position. When the substrate is transported, heated gas is ejected from the ejection port by using the elevating mechanism as a lowered position.

A ninth invention is a substrate heating method for heating from below a substrate that is transported in one direction and on which a coating operation is performed on a workpiece that is placed on the workpiece in the middle of the transport, and is described above by a lifting mechanism. A contact heating process in which the flat top surface of the heating member is brought into contact with the bottom surface of the substrate and the substrate is heated, and the bottom surface of the substrate and the top surface of the heating member are separated from each other by an elevating mechanism, and formed on the top surface of the heating member. And a non-contact heating step of jetting heating gas from the jetting opening.
According to a tenth aspect, in the ninth aspect, in the contact heating step, a suction force is applied from a suction opening formed on an upper surface of the heating member.
According to an eleventh aspect, in the tenth aspect, the ejection opening and the suction opening are configured by the same opening, and the opening is connected to a negative pressure source and a pressure source via a switching valve, and the contact In the heating step, the opening and the negative pressure source are communicated, and in the non-contact heating step, the opening and the pressure source are communicated.
In a twelfth aspect of the invention according to any one of the ninth to eleventh aspects, the contact heating step is performed when a coating operation is performed on the workpiece disposed on the substrate, and the non-contact heating is performed when the substrate is transported. A process is performed.
A thirteenth invention is characterized in that, in the twelfth invention, the non-contact heating step is performed before and after the coating operation.
A fourteenth invention is characterized in that, in the twelfth or thirteenth invention, the coating operation is an underfill process.
According to a fifteenth aspect, in the fourteenth aspect, the entire bottom surface of the substrate is uniformly heated in the contact heating step and the non-contact heating step. By uniformly heating the entire bottom surface of the substrate, the connection portion can be more effectively protected.

The substrate heating apparatus of the present invention will be described from another viewpoint as follows.
A substrate heating apparatus according to the present invention is a substrate heating apparatus that is disposed below a transport mechanism that transports a substrate to which a liquid material is applied, and that heats the substrate. A flow path communicating with a switching valve that switches communication between the negative pressure source and the pressurization source, a heating block in which the flow port is formed in a surface facing the substrate, and the flow path is provided; and the heating A heater installed in the block for heating the heating block and heating the gas in the flow path, a temperature sensor installed in the heating block for detecting the temperature of the heating block, and the temperature sensor A temperature control unit that controls the heater based on the signal, a raised position that supports the substrate in contact with the bottom surface when applying a liquid material, and the substrate of the heating block that faces the substrate when the substrate is transported There characterized by and a lifting mechanism for raising and lowering movement of the heated block between a lowered position that apart from the substrate.
Preferably, when the heating block is in the raised position, the switching valve communicates with a negative pressure source to suck gas from the flow port, and adsorbs the substrate supported from the bottom by the heating block. The substrate is heated by bringing the heating block into contact with the substrate. When the substrate is in the lowered position, the substrate bottom surface is in a position separated from the heating block by communicating with a pressurizing source by a switching valve. The substrate is heated by ejecting the gas in the flow path heated by the heater from the flow port. More preferably, the heating block is provided with a plurality of flow ports and a plurality of flow paths.
Preferably, the flow path has one end communicating with the first flow port and the other end communicating with the first valve for switching communication with the negative pressure source, and one end with the second flow path. And the other end is divided into a second flow path that communicates with a second valve that switches communication with the pressurizing source, and the heating block is arranged on the surface facing the substrate. A port and the second flow port are bored, and the first channel and the second channel are internally provided. Here, more preferably, when the heating block is in the raised position, the first valve communicates with a negative pressure source to suck gas from the first circulation port, and the heating block has a bottom surface. Adsorbing the substrate supported from and heating the substrate by bringing the heating block into contact with the substrate; when in the lowered position, the second valve communicates with a pressure source; The substrate is heated by ejecting the gas in the second flow path heated by the heater from the second circulation port toward the bottom surface of the substrate at a position separated from the heating block. More preferably, the heating block has a plurality of the first flow ports and the second flow ports, and a plurality of the first flow channels and the second flow channels. Is installed.

The coating apparatus of the present invention will be described from another viewpoint as follows.
A coating apparatus according to the present invention includes any one of the above-described substrate heating apparatuses, a discharge apparatus that discharges a liquid material, a drive mechanism that moves the discharge apparatus relative to the substrate, and the substrate extending in the coating apparatus. And a control unit that controls these operations. Here, preferably, the transport mechanism is divided into a plurality of parts, and a plurality of the substrate heating devices are provided for each of the plurality of parts of the transport mechanism.

According to the present invention, since heating is performed not only at the time of coating but also at the time of conveyance before and after the coating, for example, in the underfill process, the temperature change of the substrate on which the semiconductor chip is placed is extremely small and the connection portion is destroyed. Can be prevented.
Further, since the temperature change of the substrate can be made extremely small during the coating operation, the state of the liquid material is stable and the coating can be performed stably.
Furthermore, since two different heating systems can be implemented with one heating mechanism, both heating during coating and during non-coating (during conveyance) can be handled with one heating mechanism. For this reason, it is possible to reduce the size of the apparatus.

The best mode for carrying out the present invention will be described using an example in which an underfill process is performed on a substrate on which a semiconductor chip is arranged.
[Heating mechanism body]
A schematic perspective view of the substrate heating mechanism 105 according to the present invention is shown in FIG. FIG. 3 is a cross-sectional view of the main part, and FIG. 4 is a block diagram.
The heating block 11, which is a main part of the heating mechanism 105 in the present embodiment, has a substantially rectangular parallelepiped shape, and the upper surface 12 facing the substrate has a surface that is approximately the same size as the substrate 2.
On the upper surface 12, a plurality of first circulation ports 13 and a plurality of second circulation ports 14 are equally arranged at regular intervals. Here, the arrangement of the circulation ports 13 and 14 shown in FIG. 2 is merely an example, and the arrangement can be changed as appropriate. In the present embodiment, from the viewpoint of protecting the connection portion, the substrate 2 is arranged. An equal arrangement was adopted so that there was no temperature difference across the entire bottom surface of the plate.
The plurality of first circulation ports 13 are openings for suction and communicate with a plurality of first flow paths 15 provided in the heating block 11. The plurality of second circulation ports 14 are ejection openings, and communicate with a plurality of second flow paths 16 provided in the heating block 11, respectively. The plurality of first flow paths 15 communicate with the negative pressure source 19 via the first valve 17, and the plurality of second flow paths 16 communicate with the pressurization source 20 via the second valve 18. . By opening and closing the first valve 17 and the second valve 18, the gas in the flow path (15, 16) can be sucked in or the gas can be blown out into the flow path. Here, it is preferable that the first valve 17 and the second valve 18 are installed in a place different from the heating block 11. A plurality of first valves 17 and second valves 18 may be provided according to the strength of the negative pressure source 19 and the pressurization source 20. Although air flows as a working gas in the flow paths (15, 16), the present invention is not limited to this. For example, when an inert gas is preferable, nitrogen or the like may be used.

The heater 21 is provided inside the heating block 11 and heats the gas in the heating block 11 and the second flow path 16. In the present embodiment, an electric heater is used as the heater 21, but the invention is not limited to this. For example, a Peltier element or the like may be used. The number of heaters to be installed may be any number, and the arrangement thereof can be changed as appropriate. However, from the viewpoint of protecting the connection portion, the number does not cause a temperature difference across the entire bottom surface of the substrate 2. It is preferable to employ the arrangement.
In addition to the heater 21, a temperature sensor 22 is installed inside the heating block 11. The heater 21 and the temperature sensor 22 are connected to a temperature control unit 23, and the temperature control unit 23 controls the heater 21 based on a signal from the temperature sensor 22 so that the temperature becomes constant. The control method is not particularly limited, and PID (proportional, integral, derivative) control, general feedback control, simple on / off control, and the like often used in temperature control are used. The arrangement and number of the temperature sensors 22 can be changed and applied as appropriate.

The substrate 2 is transported in one direction by the transport mechanism 104. The transport mechanism 104 includes two rail-like members 109, and a heating mechanism 105 is disposed therebetween. The heating block 11, which is a main part of the heating mechanism 105, is placed on the lifting mechanism 24 (see FIG. 2). The elevating mechanism 24 has a raised position that supports the substrate 2 positioned above the heating block 11 from the bottom surface, and a lowered position that separates the heating block 11 from the substrate 2. In the raised position, the substrate 2 is tightly fixed by the bowl-shaped substrate pressing member 106 and the upper surface 12 of the heating block.
As an apparatus for driving the elevating mechanism 24, for example, an air cylinder in which a piston is driven by compressed gas, or a combination of a motor and a ball screw can be used. When applying the liquid material 4, the heating block 11 serves as an application stage by moving to the raised position and supporting the substrate 2 from the bottom surface. On the other hand, at the time of substrate transfer, the heating block 11 moves to a lowered position separated from the substrate 2 so that the substrate transfer is performed smoothly. In order to efficiently maintain the substrate temperature by the heated gas, it is preferable that the distance between the upper surface 12 of the heating block and the bottom surface of the substrate 2 is not too large, for example, several mm. Details of the transport mechanism 104 will be described in an embodiment.

[Heating mode]
The heating mode of the heating mechanism 105 according to the present invention is roughly divided into two depending on the position of the heating block 11.
[1] Heating in the raised position (FIG. 5)
When the heating block 11 is in the raised position, the first valve 17 communicates the first flow path 15 in the heating block 11 and the negative pressure source 19. Thereby, gas is suck | inhaled from the 1st flow path 13 in the heating block 11 from the 1st distribution port 13 connected by the other end (refer the arrow of the code | symbol 26). The substrate 2 is positioned immediately above the first flow port 13, and the substrate 2 is adsorbed by the suction action from the first flow port 13, so that the upper surface 12 of the heating block and the bottom surface of the substrate 2 are in close contact with each other. Abut. Thus, since the bottom surface of the substrate 2 comes into contact with the heating block upper surface 12, the heat from the heater 21 is directly and rapidly transmitted through the heating block 11. And the temperature of the board | substrate 2 can be kept constant by controlling the heater 21 so that temperature may become fixed by the temperature control part 23. FIG.
According to the above heating method, the upper surface 12 of the heating block is brought into contact with the bottom surface of the substrate 2, so that heat from the heater 21 can be efficiently transmitted and the temperature of the substrate 2 can be stably controlled. . Controlling the temperature stably not only prevents the connection portion 3 from being broken, but also stabilizes the state of the liquid material 4 and stabilizes the application. Moreover, since it can adsorb | suck uniformly by the 1st distribution port 13 opened in multiple numbers over the substrate surface 12, it can contact the board | substrate 2 uniformly and can maintain the flatness of the board | substrate 2. FIG.

[2] Heating in the lowered position (FIG. 6)
When the heating block 11 is in the lowered position, the second valve 18 communicates the second flow path 16 in the heating block 11 and the pressure source 20. Then, gas is blown out from the second flow port 14 communicating with the second flow path 16 in the heating block 11 at the other end (27). Since the second circulation port 14 is separated from the substrate 2, the gas is ejected toward the bottom surface of the substrate 2. The ejected gas is heated by the heater 21 in the heating block 11, and heat is transmitted to the substrate 2 by the heated gas. And the temperature of the board | substrate 2 can be kept constant by controlling the heater 21 so that temperature may become constant by the temperature control part 23. FIG.
According to the heating method described above, heat can be transferred to the moving substrate 2 by ejecting the heated gas from a remote location. That is, since the temperature can be controlled also for the moving substrate 2, the temperature change in the underfill process can be extremely reduced. Moreover, since the heated gas is ejected from the 2nd circulation port 14 opened in multiple numbers over the board | substrate surface 12, the board | substrate 2 whole can be heated.

  By appropriately combining the above [1] and [2], when the substrate 2 is stopped and applied, the temperature of the substrate 2 in the underfill process is kept constant regardless of whether the substrate 2 is moved and transported. Therefore, it is possible to prevent the connection portion 3 between the semiconductor chip 1 and the substrate 2 from being broken. The heating at the lowered position [2] is preferably performed before and after the coating operation step. Heating before the coating operation step is preliminary heating, and heating after the coating operation step is temperature holding heating that suppresses the temperature change of the substrate within a predetermined range.

In the above description, the structure in which the bottom surface of the substrate 2 and the top surface 12 of the heating block are brought into contact with each other by applying a suction force to the first circulation port 13 has been described. It is good also as a structure which makes the board | substrate 2 and the upper surface 12 of a heating block contact by the combination of 106 and the raising / lowering mechanism 24. FIG. However, in the case where the bottom surface of the substrate is processed with high accuracy, it is possible to obtain an effect that the upper surface of the heating block is sucked so as to follow the bottom surface of the substrate by providing a flow port for applying a suction force. . For this reason, an effect that the contact area increases and heat conduction is performed efficiently is obtained. In addition, when the upper surface 12 of the heating block is used as a coating stage, the flatness of the substrate 2 is improved and the coating accuracy is improved. These effects are particularly remarkable when the substrate 2 is thin. On the other hand, in the configuration in which the distribution port for applying the suction force is not provided and the substrate pressing member 106 is tightly attached, there is a problem that the central portion of the substrate is warped.
For the above reason, it is preferable to employ a configuration in which a circulation port for applying a suction force to the heating block 11 is provided.

  Hereinafter, details of the present invention will be described with reference to examples, but the present invention is not limited to the examples.

[Coating equipment]
As shown in FIG. 7, the coating apparatus 101 according to the present embodiment includes a discharge device 102, a drive mechanism 103, a transport mechanism 104, a heating mechanism 105, and a control unit 124 that controls them.
The discharge device 102 includes a storage container 107 (not shown) for storing the liquid material 4 and a nozzle 108 (see FIG. 1) for discharging the liquid material 4. The discharge device 102 is attached to the XYZ drive mechanism 103 so that the nozzle 108 faces the application surface of the application target substrate 2, and can be moved onto the application target substrate 2 conveyed by the conveyance mechanism 104.
The transport mechanism 104 is installed across the width of the coating apparatus 101, and includes three transport units (114, 115, 116), each of which can operate independently. Since the transport mechanism 104 is constituted by three transport units, it is possible to perform the carry-in and carry-out operations individually even during the coating operation, and the process processing time can be shortened. As shown in FIG. 8, the transport mechanism 104 of this embodiment has a structure in which two rail-shaped members 109 extending in the width of the substrate 2 to be transported are installed in parallel, and above the rail-shaped member 109. A belt 111 rotated by the roller 110 is provided. By rotating the roller 110, the belt 111 rotates, and the substrate 2 placed on the belt 111 is conveyed. The width of the two rail-like members 109 can be changed according to the size of the substrate 2. Here, as shown by arrows in FIG. 7, the substrate 2 is carried into the coating apparatus 101 from the left conveyance mechanism 114, and unloaded from the right conveyance mechanism 116 to the outside of the coating apparatus 101 via the central conveyance mechanism 115. .

The heating mechanism 105 includes three heating units (121, 122, 123). Each heating unit is disposed between the two rail-like members 109 constituting the transport mechanism 104 so as to correspond to the transport units (114, 115, 116). By configuring the heating mechanism 105 with three heating units, it is possible to heat the substrate 2 corresponding to individual transport operations.
Since the heating block 11 is approximately the same size as the substrate 2, the heating unit may not be installed in a space that is less than the size of the substrate 2, such as the carry-in side or the carry-out side. Therefore, in this embodiment, the auxiliary heating unit (118, 119, 120) smaller than the heating unit is provided. The auxiliary heating unit is fixed at a lowered position separated from the substrate 2 without moving up and down, and only ejects heated gas from the second circulation port 14 without providing the first circulation port 13. This is different from the heating unit described above. The size of the auxiliary heating units (118, 119, 120) may be any size as long as the space between the three heating units (121, 122, 123) can be filled, and can be appropriately changed. In this embodiment, the auxiliary heating unit 118 is installed at the position of the carry-in section, the auxiliary heating unit 119 is installed at the position between the central heating unit 122 and the right heating unit 123, and the auxiliary heating unit 120 is installed at the position of the carry-out section.
The set temperature in the heating mechanism 105 varies depending on the size of the substrate 2 and the number of semiconductor chips 1, but is generally set in the range of 100 to 150 degrees Celsius. Within the range, it may be controlled to perform heating according to the purpose of preheating, optimum temperature at the time of application, and temperature holding heating.

[Operation]
The operation of the coating apparatus 101 according to the present embodiment will be described with reference to FIGS.
On the left side of the coating apparatus 101, there is a loader for supplying the uncoated substrate 2 or a pre-process apparatus. On the right side of the coating apparatus 101 is an unloader for recovering the coated substrate 2 or a post-process apparatus. Hereinafter, for convenience of explanation, each of the heating unit and the auxiliary heating unit is referred to as a stage.
When the operation is started, the temperature of the carry-in stage 118 and the front stage 121 is read before carrying the substrate 2 into the coating apparatus 101 (STEP 101), and it is determined whether it is within the set temperature range (STEP 102). If the set temperature has not been reached, read the temperature again and repeat until the set temperature is reached. If the set temperature has been reached, it is determined whether the substrate 2 remains on the previous stage 121 (STEP 103). When the board | substrate 2 remains, it waits until the board | substrate 2 is removed. When the substrate 2 does not remain, gas ejection from the carry-in entrance stage 118 and the front stage 121 is started (STEP 104). Then, the substrate 2 is transported to the position of the previous stage 121 (STEP 105). When the substrate 2 reaches the position of the front stage 121, the ejection of gas from the front stage 121 is stopped, the front stage 121 rises to support the substrate 2, and suction of the front stage 121 is started and the substrate 2 is sucked and fixed. (STEP 106).

  When the front stage 121 is fixed, the temperature of the coating stage 122 is read (STEP 107), and it is determined whether it is within the set temperature range (STEP 108). If the set temperature has not been reached, the temperature is read again while controlling the temperature to be constant with respect to the substrate 2 fixed to the previous stage 121 (STEP 110) and repeated until the set temperature is reached. If the set temperature has been reached, it is determined whether or not the substrate 2 remains on the coating stage 122 (STEP 109). If the substrate 2 remains, the control waits until the substrate 2 is removed while controlling the temperature to be constant with respect to the substrate 2 fixed to the front stage 121 (STEP 110). When the substrate 2 does not remain, the gas ejection from the coating stage 122 is started (STEP 111). Then, the suction of the front stage 121 is cut off, the front stage 121 is lowered, and the ejection of gas from the front stage 121 is started (STEP 112). Thereafter, the substrate 2 is transported to the position of the coating stage 122 (STEP 113). When the substrate 2 reaches the position of the coating stage 122, the gas ejection from the coating stage 122 is stopped, the coating stage 122 rises to support the substrate 2, and the suction of the coating stage 122 is started to fix the substrate 2 by suction. (STEP 114).

  In the application stage 122, the liquid material 4 is applied by the discharge device 102 (STEP 115). When the application is completed, the temperatures of the intermediate stage 119 and the rear stage 123 are read (STEP 116), and it is determined whether they are within the set temperature range (STEP 117). If the set temperature is not reached, the temperature is read again while controlling the temperature to be constant with respect to the substrate 2 fixed to the coating stage 122 (STEP 119) and repeated until the set temperature is reached. If the set temperature has been reached, it is determined whether the substrate 2 remains on the rear stage 123 (STEP 118). If the substrate 2 remains, control is performed so that the temperature is constant with respect to the substrate 2 fixed to the coating stage 122 (STEP 119), and the process waits until the substrate 2 is removed. When the substrate 2 does not remain, gas ejection from the intermediate stage 119 and the rear stage 123 is started (STEP 120). Then, the suction of the coating stage 122 is cut, the coating stage 122 is lowered, and the ejection of gas from the coating stage 122 is started (STEP 121). Thereafter, the substrate 2 is transported to the position of the rear stage 123 (STEP 122). When the substrate 2 reaches the position of the rear stage 123, the ejection of gas from the rear stage 123 is stopped, the rear stage 123 rises to support the substrate 2, and the suction of the rear stage 123 is started to fix the substrate 2 by suction. (STEP 123).

  When fixed to the rear stage 123, the temperature of the carry-out stage 120 is read (STEP 124), and it is determined whether it is within the set temperature range (STEP 125). If the set temperature is not reached, the temperature is read again while controlling the substrate 2 fixed to the rear stage 123 so that the temperature becomes constant (STEP 127), and is repeated until the set temperature is reached. If the set temperature has been reached, it is determined whether the substrate 2 can be carried out of the apparatus 101 (STEP 126). If unloading is not possible, control is performed so that the temperature is constant with respect to the substrate 2 fixed to the rear stage 123 (STEP 127), and the process waits until unloading becomes possible. If it can be carried out, gas ejection from the carry-out stage 120 is started (STPE 128). Then, the suction of the rear stage 123 is cut off, the rear stage 123 is lowered, and the ejection of gas from the rear stage 123 is started (STEP 129). Thereafter, the substrate 2 is transported outside the apparatus 101 (STEP 130).

  Although the above operation shows a flow for one substrate 2, it is needless to say that it can be applied to a plurality of substrates 2 in succession. In that case, the operations from STEP 101 to STEP 106, STEP 107 to STEP 114, STEP 115 to STEP 123, and STEP 124 to STEP 130 can be performed independently. It can be shortened.

In the first embodiment, the flow path in the heating block 11 is divided into the negative pressure system 15 and the pressurization system 16, but this may be a single flow path. FIG. 13 is a cross-sectional view of a main part of the heating mechanism according to the second embodiment, and FIG. 14 is a block diagram.
The heating block 201 in the second embodiment has a substantially rectangular parallelepiped shape, and the upper surface 202 facing the substrate is a surface having almost the same size as the size of the substrate 2. A plurality of circulation ports 203 are evenly opened on the upper surface 202 at regular intervals. Each circulation port 203 communicates with a flow path 204 provided in the heating block 201. The flow path 204 communicates with a switching valve 205 installed at a location different from the heating block 201, and communicates with the negative pressure source 206 and the pressurizing source 207 via the switching valve 205. By switching the switching valve 205 and communicating either the negative pressure source 206 or the pressurization source 207 with the flow path 204, the gas in the flow path 204 is sucked in or the gas is blown out into the flow path. A plurality of switching valves 205 may be provided in accordance with the pressure level of the negative pressure source 206 or the pressure source 207. Other heaters 21, temperature sensor 22, elevating mechanism 24 and the like are the same as those in the first embodiment.

When the heating block 201 is in the raised position, the switching valve 205 connects the flow path 204 in the heating block 201 and the negative pressure source 206. Thereby, the gas is sucked from the flow port 203 communicating with the flow path 204 in the heating block 201 at the other end. The substrate 2 is positioned immediately above the circulation port 203, and the substrate 2 is adsorbed by the suction action from the circulation port 203, and the upper surface 202 of the heating block and the bottom surface of the substrate 2 are in close contact with each other. Thus, since the bottom surface of the substrate 2 comes into contact with the upper surface 202 of the heating block, the heat from the heater is directly and quickly transmitted through the heating block 201. Then, by controlling the heater so that the temperature becomes constant by the temperature control unit 208, the temperature of the substrate 2 can be kept constant.
When the heating block 201 is in the lowered position, the switching valve 205 communicates the flow path 204 in the heating block 201 and the pressurizing source 207. Then, gas is blown out from the flow port 203 communicating with the flow path 204 in the heating block 201 at the other end. Since the circulation port 203 is separated from the substrate 2, the gas is blown out toward the bottom surface of the substrate 2. The blown out gas is heated by a heater in the heating block 201, and heat is transmitted to the substrate 2 by the heated gas. Then, the temperature of the substrate 2 can be kept constant by controlling the heater so that the temperature becomes constant by the temperature control unit 208.
In addition, according to the heating block 201 of the present embodiment, by using a single channel, the number of valves and piping connected to the channel can be reduced, and space saving can be realized.

It is explanatory drawing explaining an underfill process. It is a schematic perspective view of the heating mechanism which concerns on this invention. It is principal part sectional drawing of the heating mechanism which concerns on this invention. It is a block diagram of the heating mechanism which concerns on this invention. It is explanatory drawing explaining the heating aspect in the heating block raise position which concerns on this invention. It is explanatory drawing explaining the heating aspect in the heating block lowering position which concerns on this invention. 1 is a schematic perspective view of a coating apparatus according to Example 1. FIG. FIG. 3 is an explanatory diagram for explaining a transport mechanism of the coating apparatus according to the first embodiment. 3 is a flowchart illustrating a flow of operations in the coating apparatus according to the first embodiment. 3 is a flowchart illustrating a flow of operations in the coating apparatus according to the first embodiment. 3 is a flowchart illustrating a flow of operations in the coating apparatus according to the first embodiment. 3 is a flowchart illustrating a flow of operations in the coating apparatus according to the first embodiment. 6 is a cross-sectional view of a main part of a heating mechanism according to Embodiment 2. FIG. 6 is a block diagram of a heating mechanism according to Embodiment 2. FIG.

Explanation of symbols

1 Workpiece (semiconductor chip)
2 Substrate 3 Connection part (protruding electrode, electrode pad)
4 Liquid resin, liquid material 11 Heating block 12 Surface facing the substrate (upper surface)
13 First distribution port (suction opening)
14 Second distribution port (spout opening)
15 1st flow path 16 2nd flow path 17 1st valve 18 2nd valve 19 Negative pressure source 20 Pressurization source 21 Heater 22 Temperature sensor 23 Temperature control part 24 Lifting mechanism 25 Piping joint 26 Flow of the gas to inhale 27 Flow of gas to be ejected 101 Coating device 102 Discharging device 103 XYZ drive mechanism 104 Transport mechanism 105 Substrate heating mechanism 106 Substrate pressing member 107 Storage container 108 Nozzle 109 Rail-shaped member 110 Roller 111 Belt 112 Substrate transport direction 113 Drive direction 114 Left transport unit 115 Central transport unit 116 Right transport unit 118 Left auxiliary heating unit (carry-in stage)
119 Central auxiliary heating unit (intermediate stage)
120 Right side auxiliary heating unit (carry-out stage)
121 Left heating unit (front stage)
122 Central heating unit (coating stage)
123 Right side heating unit (rear stage)
124 Control unit 201 Heating block 202 Surface (upper surface) facing the substrate
203 Flowing port 204 Flow path 205 Switching valve 206 Negative pressure source 207 Pressurizing source 208 Temperature control unit 209 Gas flow

Claims (15)

A substrate heating apparatus for heating a substrate that is transported in one direction and on which a coating operation is performed with respect to a workpiece disposed thereon in the middle of transportation,
A heating member that is in contact with the bottom surface of the substrate and that heats the substrate, and a heating member that is formed on the top surface and that has an ejection opening that ejects a heating gas to the bottom surface of the substrate, and the heating member is raised and lowered And a lifting mechanism. The heating member includes a suction opening on its upper surface for applying a suction force to the bottom surface of the substrate,
At the raised position of the lifting mechanism, a suction force is applied from the suction opening, the upper surface of the heating member is brought into contact with the bottom surface of the substrate to heat the substrate, and at the lowered position of the lifting mechanism, the ejection The substrate heating apparatus according to claim 1, wherein the substrate is heated by jetting heated gas from the opening.   3. The substrate heating apparatus according to claim 2, wherein the ejection opening and the suction opening are configured by the same opening, and the opening is connected to a negative pressure source and a pressurization source through a switching valve.   The substrate heating apparatus according to claim 1, wherein there are a plurality of the openings.   5. The substrate heating apparatus according to claim 1, wherein a plurality of heating members are continuously arranged in a transport direction of the substrate.   The substrate heating apparatus according to claim 5, wherein the heating member includes a plurality of types of heating blocks having different lengths.   7. The substrate heating device according to claim 1, a discharge device that discharges the liquid material, a drive mechanism that moves the discharge device relative to the substrate, and the substrate in one direction. A liquid material applicator comprising: a transport mechanism for transporting to the surface; and a controller for controlling these operations.   When the controller performs a coating operation on a workpiece placed on the substrate, the lifting mechanism is set to the raised position to bring the upper surface of the heating member into contact with the bottom surface of the substrate. The liquid material coating apparatus according to claim 7, wherein the heated gas is ejected from the ejection port. A substrate heating method for heating a substrate on which a coating operation is performed with respect to a workpiece that is conveyed in one direction and is arranged on the way in the middle of conveyance,
A contact heating step of heating the substrate by bringing the flat top surface of the heating member into contact with the bottom surface of the substrate by a lifting mechanism;
A non-contact heating step in which a bottom surface of the substrate and the upper surface of the heating member are separated by an elevating mechanism, and a heating gas is ejected from an ejection opening formed on the upper surface of the heating member. Heating method.   The substrate heating method according to claim 9, wherein in the contact heating step, a suction force is applied from a suction opening formed on an upper surface of the heating member. The ejection opening and the suction opening are constituted by the same opening, and the opening is connected to a negative pressure source and a pressurization source through a switching valve,
In the contact heating step, the opening and the negative pressure source are communicated,
The substrate heating method according to claim 10, wherein in the non-contact heating step, the opening and the pressure source are communicated.   12. The contact heating process is performed when a coating operation is performed on a work placed on the substrate, and the non-contact heating process is performed when the substrate is transported. The substrate heating method according to one item.   The substrate heating method according to claim 12, wherein the non-contact heating step is performed before and after the coating operation.   14. The substrate heating method according to claim 12, wherein the coating operation is an underfill process.   The substrate heating method according to claim 14, wherein the entire bottom surface of the substrate is uniformly heated in the contact heating step and the non-contact heating step.