TW201002417A - Method of coating protective layer on crucible for crystal growth - Google Patents

Method of coating protective layer on crucible for crystal growth Download PDF

Info

Publication number
TW201002417A
TW201002417A TW97125426A TW97125426A TW201002417A TW 201002417 A TW201002417 A TW 201002417A TW 97125426 A TW97125426 A TW 97125426A TW 97125426 A TW97125426 A TW 97125426A TW 201002417 A TW201002417 A TW 201002417A
Authority
TW
Taiwan
Prior art keywords
coating
crucible
protective coating
crystal
powder
Prior art date
Application number
TW97125426A
Other languages
English (en)
Chinese (zh)
Other versions
TWI343830B (enrdf_load_stackoverflow
Inventor
Kun-Feng Lin
Zhi-Hong Zhan
feng-lin Xu
Xian-Jia Yao
Original Assignee
Danen Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danen Technology Corp filed Critical Danen Technology Corp
Priority to TW97125426A priority Critical patent/TW201002417A/zh
Publication of TW201002417A publication Critical patent/TW201002417A/zh
Application granted granted Critical
Publication of TWI343830B publication Critical patent/TWI343830B/zh

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
TW97125426A 2008-07-04 2008-07-04 Method of coating protective layer on crucible for crystal growth TW201002417A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW97125426A TW201002417A (en) 2008-07-04 2008-07-04 Method of coating protective layer on crucible for crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW97125426A TW201002417A (en) 2008-07-04 2008-07-04 Method of coating protective layer on crucible for crystal growth

Publications (2)

Publication Number Publication Date
TW201002417A true TW201002417A (en) 2010-01-16
TWI343830B TWI343830B (enrdf_load_stackoverflow) 2011-06-21

Family

ID=44825184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97125426A TW201002417A (en) 2008-07-04 2008-07-04 Method of coating protective layer on crucible for crystal growth

Country Status (1)

Country Link
TW (1) TW201002417A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102797042A (zh) * 2012-09-06 2012-11-28 张礼强 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液
TWI624429B (zh) * 2013-07-11 2018-05-21 Ube Industries Tantalum nitride powder for release agent for mold for casting of polycrystalline ingot, method for producing the same, slurry containing the tantalum nitride powder, mold for casting polycrystalline ingot, method for producing the same, and method for producing polycrystalline ingot using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102797042A (zh) * 2012-09-06 2012-11-28 张礼强 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液
CN102797042B (zh) * 2012-09-06 2015-06-10 张礼强 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液
TWI624429B (zh) * 2013-07-11 2018-05-21 Ube Industries Tantalum nitride powder for release agent for mold for casting of polycrystalline ingot, method for producing the same, slurry containing the tantalum nitride powder, mold for casting polycrystalline ingot, method for producing the same, and method for producing polycrystalline ingot using the same

Also Published As

Publication number Publication date
TWI343830B (enrdf_load_stackoverflow) 2011-06-21

Similar Documents

Publication Publication Date Title
CN1946881B (zh) 用于硅结晶的坩埚
EP1899508B1 (en) Crucible for the crystallization of silicon and process for its preparation
TWI554561B (zh) 矽熔化液接觸構件及其製造方法與結晶矽之製造方法
EP1570117A1 (en) Vessel for holding silicon and method of producing the same
CN101696514A (zh) 一种多晶锭的生产方法
JP2004131317A (ja) 石英ガラス部材の強化方法と強化処理した石英ガラスルツボ
JP2000319080A (ja) 炭化珪素被覆黒鉛部材
CN109704782B (zh) 一种用于光伏多晶硅生产的Si2N2O陶瓷粉体的制备方法
CN101576346A (zh) 用于熔化硅的坩埚和该坩埚使用的脱模剂
TW201002417A (en) Method of coating protective layer on crucible for crystal growth
JP4471692B2 (ja) 離型層を有するシリコン溶融用容器の製造方法
JP2009274905A (ja) シリコン溶融ルツボ
JP3250149B2 (ja) シリコンインゴット鋳造用鋳型およびその製造方法
JP2008115056A (ja) シリコン溶融ルツボおよびこれに用いる離型材
JP4358555B2 (ja) シリコン単結晶引上用石英ガラスルツボとその引上方法
JP3981538B2 (ja) シリコン保持容器およびその製造方法
CN108585535B (zh) 高纯免喷涂坩埚的生产工艺
JP4884150B2 (ja) シリコン鋳造用鋳型の製造方法
JP5610570B2 (ja) シリカガラスルツボ、シリコンインゴットの製造方法
JPS62176981A (ja) 窒化ホウ素被覆ルツボ
TWI333939B (en) Corrosion-resistant member and producing method thereof
JP5053206B2 (ja) 型材を用いた石英ガラス材料の成形方法
JP3378608B2 (ja) 半導体製造用治具のための炭化珪素質基材の製造方法
JP2005306708A (ja) 石英ルツボ
JP2006327912A (ja) シリコンインゴット形成用鋳型およびシリコンインゴットの製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees