TW200947089A - System for displaying images and fabrication method thereof - Google Patents

System for displaying images and fabrication method thereof Download PDF

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Publication number
TW200947089A
TW200947089A TW098115084A TW98115084A TW200947089A TW 200947089 A TW200947089 A TW 200947089A TW 098115084 A TW098115084 A TW 098115084A TW 98115084 A TW98115084 A TW 98115084A TW 200947089 A TW200947089 A TW 200947089A
Authority
TW
Taiwan
Prior art keywords
layer
display system
image display
source
thin film
Prior art date
Application number
TW098115084A
Other languages
English (en)
Inventor
Ramesh Kakkad
Keiichi Sano
Fu-Yuan Hsueh
Chin-Chung Liu
Sheng-Wen Chang
Original Assignee
Tpo Displays Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tpo Displays Corp filed Critical Tpo Displays Corp
Publication of TW200947089A publication Critical patent/TW200947089A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
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    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13324—Circuits comprising solar cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector
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    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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200947089 • 六、發明說明： 【發明所屬之技術領域】 本發明係關於包括薄膜電晶體液晶顯示裝置（thin film transistor liquid crystal displays，TFT-LCDs)之影像顯示系 統，且特別是關於一種薄膜電晶體陣列基板（thin film transistor array substrate)及其製造方法，其内設置有含非晶 石夕膜層之至少一感光元件（light-sensing element)。 【先前技術】 參 液晶顯示裝置(liquid crystal display，LCD)—般包括有 一下部基板、一上部基板與夾置於其間之一液晶層。上部 基板通常包括一彩色濾、光物（color filter)與一共同電極 (common electrode)，而下部基板即為習知之薄膜電晶體陣 列基板（thin film transistor array substrate，下稱 TFT 陣列基 板）。為於液晶顯示裝置中提供如環境光感測、觸控感測與 影像感測等其他功能，便需於其内之TFT陣列基板上設置 0 —感光元件。 第1圖顯示了習知液晶顯示裝置中所應用之一 TFT陣 列基板10 ’其内設置有感光元件。在此，TFT陣列基板10 包括一透明基板12以及形成於其上之一選擇性緩衝層 14。於TFT陣列基板上1 〇定義有一驅動電路區（driver region)40以及一像素區（Pixel regi〇n)5〇。於TFT陣列基板 10之驅動電路區40内形成有一 η型薄膜電晶體(n-type TFT，下稱η型TFT)60、一 p型薄膜電晶體(p_type TFT， 下稱p型TFT)70以及一感光元件（light-sensing 0773-A33604TWF_P2008007 3 200947089 d_n_，而於TFT p車列練1〇之像素區％内則形成 有- η型TFT 85以及-儲存電容器（st〇rage⑽9〇。 於驅動電路區40内之感光U 8㈣包括了&㈣連 結之一 P型摻雜區16D、-非掺雜區（n〇n_d〇ped region) 16A、一 η型摻雜區16C以及另—n型摻雜區〗^， 進而形成- PIN-N型感光二極體(ph〇tc)dk)de)。另外，導電 接觸物24形成並穿過了層間介電層2〇與閘介電層18而實 體接觸了 P型摻雜區16D與n型摻雜區。而感光裝置 80内形成於位於層間介電層2G上之透明導電層3()則作為 閘電極之用，以調整通過上述ΡΙΝ·Ν型感光二極體之電 流。上述透明導電層30亦使得環境光可抵達ρΐΝ·Ν型感光 二極體處。感光裝置80的設置使得顯示裝置具備了如環境 光感測、觸控感測以及影像感測等額外功能。 雖然於第1圖内顯示了感光裝置8〇於驅動電路區邨 的設置情形’然而其可視所需功能而定而可設置於驅動電 路區40或像素區50内。對於節能需求而言，可將感光| 置設置於驅動電路區40之内，而對於影像感測或光學觸^ 感測等需求而言，可將感光裝置80設置於像素 < 感光裝置⑽《及此些TFT㈣與85等==^ 裝置之製作而同時形成於TFT陣列基板1〇上。然而，上 述製作仍存在有缺點。舉例來說，當將感光裝置8〇設置於 像素區50内以提供如觸控感測或影像感測等功能時，其將 佔據了像素區内之部分區域而因此降低了像素透光區域或 開口率（aperture ratio)。此外，當n型TFT 6〇與％之主動 層（active layer)係採用低溫多晶矽膜層時，p型tft % 〇773-A33604TWF_P2008007 4 200947089 ΠΝ·Ν結構之感光裝置80其亦將採用此低溫多晶矽膜層。 由於多晶石夕膜層的感光度(photosensitivity)極差，且其於顯 示器背光(backlight)存在情形下對於環境光的感測度將更 為降低。而非晶矽膜層的感光度遠優於多晶矽膜層的感光 度，因此採用了非晶矽感光膜層係為較佳選擇。然而，隨 著使用時間的增加而其内非晶矽膜層感測度的劣化亦為上 述結構所遭遇之問題之一。由於上述感光裝置80係採用感 光二極體結構（或稱光TFT)，其具有水平於透明基板12之 φ 一電流方向而具有極高之電流密度。在此，電流密度值主 要關於所應用之主動層的厚度。因此，由於非晶矽内之石夕_ 氫鍵結於於高電流密度下容易斷鍵而恐隨著使用時間的延 長而造成感光度的顯著下降，故對於非晶矽TFT感光元件 而言可靠度問題為其一大考驗。 有鑑於此，便需要適用於顯示裝置之一種TFT陣列基 板，以於其内應用有較佳感光裝置，藉以滿足高感光率以 及高可靠度之需求，且不會對於TFT陣列基板的製作造成 ❹ 額外製程步驟的增加。 【發明内容】 本發明提供了 一種影像感測裝置及其製造方法。 依據一實施例，本發明之影像感測裝置包括： 一薄膜電晶體陣列基板，其包括具有由複數個薄膜電 晶體所組成之陣列之一基板；以及至少一感光元件，設置 於該基板上’其中該感光元件包括非晶矽膜層且具有垂直 於該基板之一電流方向。 0773-A33604TWF_P2008007 200947089 依據另一實施例，本發明之影像感測裝置之製造方 法，包括： 提供具有一薄膜電晶體陣列之一基板；於該基板上形 成一底電極，於該底電極上形成包括一非晶矽膜層之一感 光7L件’以及形成_頂電極於該感光元件之上。 為了讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂’下文特舉—較佳實施例，並配合所附圖示，作 詳細說明如下： 【實施方式】 於下文中’”覆蓋基板，，、，’於膜層之上”或”位於膜層上” 等描述僅顯示了相較於一基礎膜層表面之相對位置關係而 無論中間膜層的存在情形。因此，此些描述可能不僅顯示 了膜層的直接接觸情形，而可能更顯示一或多個層疊膜層 之間的非接觸情形。 本發明&供了新穎的影像顯示系統的製造方法。本發 明之影像顯示系統具有一薄膜電晶體陣列基板（下稱TFT 陣列基板）’其上設置有至少一感光元件。TFT陣列基板的 製作請參照第2-5圖之示意圖。第6-11圖則顯示了於其他 實施例中之TFT陣列基板之實施情形。為了簡化圖式，於 上述圖式中僅繪示了數個薄膜電晶體的製作情形。 請參照第2圖，TFT陣列基板1〇〇包括一驅動電路區 140以及一像素區150,其上包括選擇性緩衝層1〇4形成於 透明·基板1〇2。一般而言，緩衝層1〇4可包括如氧化矽、 氮化矽或上述材料組合之材料，且亦可為由氧化矽與氮化 0773-A33604TWF_P2008007 6 200947089 矽等材料所形成之疊層結構，而透明基板102則可包括如 玻璃、塑膠或陶瓷基板之一透明絕緣材料或如金屬或金屬 合金之一不透明材料。塑膠基板則可包括由至少聚乙烯對 苯二曱酯（polyethyleneterephthalate)、聚酯（polyester)、聚 碳酸醋（polycarbonates)、聚丙烯酸醋（polyacrylates)或是聚 苯乙烯（polystyrene)其中之一所形成之一個或多個材料膜 層。 請參照第2圖，於TFT陣列基板100上形成有數個電 ❻ 子元件，如位於驅動電路區140内之η型TFT 160與p型 TFT 170以及位於像素區150内之η型TFT 180與儲存電 容器190。上述電子元件係順應地為一層間介電層112所 覆蓋，而層間介電層112之材質則包括絕緣氧化物、氮化 物或上述絕緣材料之組合。適當之絕緣材料例如為氮化發 及氧化碎。 於第2圖中，驅動電路區14〇内之η型TFT 160與像 素區150内之n型TFT 180皆包括由一對η型摻雜半導體 ❹層所構成之源極/汲極區106Β、由本徵(intrinsic)半導體層 所形成且位於源極/汲極區1〇6B間之一通道區1〇6A、由n 型#雜半導體層所形成且位於通道區1〇6Α與源極/汲極區 106B間之一對輕度摻雜源極/汲極區1〇6C (LDD區）、覆蓋 源極/汲極區106B與通道區ι〇6Α以及LDD區106C之如 氧化矽膜層之一閘絕緣層1〇8以及位於閘絕緣層1〇8上之 一閘電極110 A。 另外，位於驅動電路區140内之p型TFT 170則包括 由P型摻雜半導體層所形成之一對源極/汲極區l〇6D、由 〇773-A33604TWF_P2OO8OO7 n 200947089
本徵(irUdn/kO半導體層所形成且位於源極/汲極區l〇6D間 之一通道區1〇6Α、覆蓋源極/汲極區106D與通道區106A 之如氧化石夕膜層之-閘絕緣層1〇8以及位於開絕緣層1〇8 上之一閘電極110B。 再者’形成於像素區150内之儲存電容器190則包括 η型TFT 180之源極/汲極區1〇6B 一部分之n型摻雜半導 體層之第一電極。第一電極係為閘絕緣層1〇8所覆蓋，而 第二電極110C係形成於第一電極上，而其間之閘絕緣層 108部分則作為儲存電容器19〇之儲存區域。 位於基板102上如η型TFT 160與180、ρ型TFT 170 與儲存電容器190等電子裝置，其可採用習知tft製程與 儲存電容器製程所形成，故不在此進一步描述其製造情形 以間化圖式。上述主動層可包括多晶碎(P〇ly SiliC〇n)、非晶 石夕（amorphous silicon)、微結晶碎（microcrystalline silicon)、 氧化辞（zinc oxide)或金屬氧化物半導體（metal oxide semiconductor)等材料。 接著’請參照第3圖，形成具有開口之阻劑層（未顯示） 於層間介電層112之上。接著採用此阻劑層作為罩幕而蝕 刻層間介電層112，形成數個接觸孔0P1以及數個接觸孔 0P2’以分別露出位於驅動電路區140與位於像素區150 的内源極/汲極區106B/106D及閘極Π0Α與110B。蝕刻層 間介電層112之製程可包括一濕蝕刻或乾蝕刻製程。於形 成接觸孔ΟΡ1與ΟΡ2之後接著移除阻劑層。 接著，於層間介電層112之上形成如金屬層之導電層 (未顯示），並使之填入於此些接觸孔ΟΡ1與ΟΡ2之内。接 0773-A33604TWF_P2008007 ° 8 200947089 著藉由習知微影與蝕刻製程（未顯示）圖案化導電層以進 而形成導電構件114與H6,其分別包括形成於^觸孔 OP1/OP2内之一插拴部以及形成於層間介電層I〗]上鄰近 於接觸孔OP1/OP2之一導線部。在此，於像素區15〇内之 覆蓋儲存電容器190之層間介電層112上則同時形成了一 導電構件118。 請參照第4圖’接著於像素區150内導電構件118上 形成一感光元件130。感光元件130係繪示為包括了依序 ❹堆疊於導電構件118上之第一膜層122、第二膜層124與 第三膜層126之三膜層複合結構。第一膜層122、第二膜 層124與第三膜層126可形成有一 NIP或一 ΠΝ結構，其 中N代表η型矽層、I代表未摻雜之非晶矽層，而卩代表卩 型矽層。第一膜層122、第二膜層124以及第三膜層126 的製作可藉由依序施行三個矽膜層的沈積後接著選擇性的 餘刻此些膜層而形成感光元件130。第一膜層122與第三 膜層126的摻雜可於其沈積時臨場地(in_situ)達成，或可於 ❹其沈積之後藉由一額外之離子佈值製程並搭配適當之摻質 而形成。於形成感光元件130之後，接著形成一平坦層或 保護層128 ’其材料例如為氮化矽或聚亞醯胺，以覆蓋η 型TFT 160與180、ρ型TFT 170、儲存電容器190以及感 光元件130。 請參照第5圖’接著於像素區15〇内平坦層128形成 開口 132與134 ’以分別露出感光元件13〇與η型TFT 180 .之導電構件114。接著沈積透明導電層（未顯示）並圖案化此 透明導電層以分別形成一像素電極136與一頂電極136A。 0773-A33604TWF_P2008007 9 200947089 像素電極136與頂電極136A係分別順應地填入於開口 134 與132内，而接觸η型TFT 180中所露出之導電構件U4 與感光元件130頂面。上述透明導電層可包括銦錫氧化物 (IT〇)、銦鋅氧化物（IZO)、紹鋅氧化物(AZO)或氧化鋅(Zn〇) 或其他材料或上述材料之組合。依據不同之實施例需求， 透明導電層可藉由如濺鍍、電子束蒸鍍、熱蒸鍍或化學氣 相沈積製程所形成。 如第5圖所示’覆蓋感光元件130之頂電極i36A、感 光元件130以及導電構件118(作為底電極之用）形成了感光 裝置195，其適用於如環境光感測、觸控感測、影像感測、 發電及7或顯示裝置中像素中記憶胞裝置（memory-in-pixel) 等應用。 如第5圖所示之TFT陣列基板1〇〇具有以下優點。由 於感光裝置195係形成於位於儲存電容器19Q上，因此像 素區MG之開口率並不會@此縮減。再者，由於感光裝置 195係具有一堆疊結構’因而具有垂直於陣列基板 之、電流方向，進而提供了具有較低電流密度且較為可靠 之感光裝置195。再者，由於感光裳置195之感光元件13〇 係由非晶梦材料切層所形成，故其感光元件的感光率相 較則木用夕aa石夕材料之感光元件可更為增加，且於當tfT 160 170與180係採用低溫多晶㊉製程所形成時亦不會受 到影響。此外’感光元件13〇可藉由不透光之導電構件118 與110C而遮蔽來自於顯示器之背光，因此來自於感光層之 感光訊號係皆㈣境光所產生。如此有助於改善於如觸控 感測與環境錢測等應用時之感光準確度。而於如太陽能 0773-A33604TWF_P2008007 1〇 200947089 電池的應用方面，則可採用更為薄化或採用透明材料之電 極118與ll〇c，以允許光子自背光處抵達感光元件13〇以 更增加來自於背光之能量產生。於其他實施例中’感光元 件亦可形成於像素區内不位於儲存電容器上之其他位置。 而於此實施例中，雖然開口率會受到影響’但仍可保留前 述之所有優點。 第6圖顯示依據另一實施例之TFT陣列基板100之剖 面圖。於本實施例中，感光裝置195係包括雙膜層結構之 ❹感光元件130,，其包括依序形成於導電構件118上之第一 膜層122,與第二膜層124,堆疊結構。第一膜層122’與第二 膜層124,可為堆疊之NI、IN、PI或1p結構，其中N代表 η型矽膜層，I代表未經掺雜之非晶矽膜層’而P代表P型 矽膜層。 第7圖顯示依據另一實施例之TFT陣列基板100。於 本實施例中，感光裝置195係設置於驅動電路區140内。 在此，感光裝置195係具有相似於第5圖所示之結構且係 ❹位於層間介電層112之上。 於上述第2-7圖内所示薄膜電晶體係繪示為具有頂部 閘極結構(top gate structure)之薄膜電晶體’但並不以上述 實施情形加以限制本發明。於第2-7圖内所示之薄膜電晶 體亦可部分或全部替代為具有底部閘極結構(bottom gate) 之薄膜電晶體。請參照第8圖與第9圖，顯示具有底閘極 結構之TFT陣列基板之實施例。於本些實施例中，感光裝 置195係具有相似於第6圖與第7圖所示之結構且設置.於 閘絕緣層108上。如第8圖所示，TFT陣列基板1〇〇之感 0773-A33604TWFJP2008007 ^ 11 200947089 光裝置195形成於像素區150内。如第9圖所示’感光裝 置195亦可形成於驅動電路區140内。於第8圖與第9圖 内所示之薄膜電晶體160、170與180以及感光裝置丨95内 之構件係採用形同於第6圖與第7圖所示情形之相同標號。 如第8圖與第9圖所示之具有底部電極結構之薄膜電 晶體160、170與180之薄膜電晶體陣列基板的製作如 下所述： 形成薄膜電晶體160、170與180之一閘極(如閘電極 110A/110B/110C)於基板102上。形成一第一介電層（如閘 絕緣層108)於閘極上。形成包括一源極/汲極層（如源極/汲 極區106B/106D)之一主動層（由通道區106A與106B/106D 所組成之膜層）於第一介電層上。形成一第一導電層（未顯 示）於主動層與第一介電層上並圖案化此導電層以形成底 電極(如底電極118)與接觸該源極/汲極區之一源極/汲極電 極（如源極/汲極電極114)。接著形成一感光元件(如感光元 件130)於底電極上。形成一第二介電層（如保護層128)於第 一介電層與感光元件上。形成一第一開口（如開口 132)與一 第二開口（如開口 134)於第二介電層内’露出源極/汲極電 極與感光元件。形成一第二導電層於第二介電層上與第二 開口與第三開口内並圖案化此第二導電層以形成頂電極 (如頂電極136A)與接觸源極/汲極電極之一像素電極（如像 素電極136)。 於其他實施例中，則可形成數個電性上相串聯或相並 聯之感光裝置195於TFT陣列基板100之像素區15〇及/ 或驅動電路區140内。如第10圖所示，顯示相串聯之兩戌 0773-A33604TWF_P2008007 12 200947089 ’光裝置195之剖面情形。此些感光裝置195係形成於像素 區150内，而於保護層128内則形成有數個開口 132A ’以 分別露出感光裝置⑼之底電極118。於保護層128上形 成有數個頂電極136 ’其與前一感光裝置195之頂電極118 相連結。如第π圖所示，亦可採用並聯方式相連結兩感光 裝置195,其係分別連接其底電極與頂電極。對於如感光、 觸控感測以及環境光感測等應用方面，前述之感光裝置195 經串聯後且隨著相連結之感光裝置195數量的增加有助7 ❹降低其暗電流（dark current)且可保持個別之感光元件所权 供之一定光電流量，進而改善其感光率。而於如太陽能電 池或像素中記憶胞結構等應用方面，前述感光裝置195經 串聯後且隨著相連結之感光裝置195數量的增加亦有助於 開啟電壓的增加。經並聯之感光裝置則可增加光電流卫*雉 持開起電壓之一定值。旅聯連結之感光裝置所具有之較高 光電流值對於如太陽能電池以及感光方面應用極為有用。 與第9圖所示之TFT陣列基板100， 路區140内之感光裝置。同樣地，如 示之TFT陣列基板100上可形成有— 第12圖為一上視示思圖’顯示了如第5、6與8圖所 ❷示之TFT陣列基板^，其具有形成於像素區ι5〇内之感 光裝置195。第η圖則為一上視示意圖，顯示了如第7圖 1 ’其具有形成於驅動電 如第12圖與第13圖所 一或多個感光裝置195。 統’其包括了顯示面板 第14圖繪示了一影像顯示系統， 、8與9圖所示之TFT 顯示面板300包括
300與電子裝置500。如第14圖所示， 了一 TFT陣列基板，例如第5、6、7、5 陣列基板100。 0773-A33604TWF P2008007 13 200947089 一般而言，電子裝置500通常包括有顯示面板300與 一輸入裝置400。再者，輸入裝置400可與影像顯示裝置 300耦接，以提供適當之訊號（例如影像訊號）至影像顯示面 板300以產生影像。電子裝置500例如為行動電話、數位 相機、個人資訊輔助者PDA、筆記型電腦、桌上型電腦、 電視、車用顯示器、攜帶型DVD播放器、全球定位系統、 數位相框或導航螢幕等電子裝置。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖為一示意圖，顯示了用於顯示裝置之一習知薄 膜電晶體(TFT)陣列基板； 第2〜5圖為一系列示意圖，分別顯示了於本發明一實 施例之薄膜電晶體陣列基板之製作過程中的剖面情形； 第6圖為一依據本發明另一實施例之薄膜電晶體陣列 基板； 第7圖為一依據本發明又一實施例之薄膜電晶體陣列 基板； 第8圖為一依據本發明另一實施例之薄膜電晶體陣列 基板； 第9圖為一依據本發明又一實施例之薄膜電晶體陣列 基板； 0773-A33604TWF P200800? 14 200947089 第ίο圖為一依據本發明另一實施例之薄膜電晶體陣 列基板， 第11圖為一依據本發明又一實施例之薄膜電晶體陣 列基板； 第12圖為一依據本發明另一實施例之薄膜電晶體陣 列基板； 第13圖為一依據本發明又一實施例之薄膜電晶體陣 列基板；以及 Λ 第14圖顯示了一影像顯示系統之示意圖，其包括本 發明之薄膜電晶體陣列基板。 【主要元件符號說明】 10〜TFT陣歹丨J基板； 14~緩衝層； 16B、16C〜η型摻雜區； 18〜閘介電層； 24〜導電接觸物； 40〜驅動電路區； 60、85〜η型薄膜電晶體； 80〜感光元件； 100〜TFT陣列基板； 104〜透明基板； 12〜透明基板； 16Α〜非摻雜區； 16D~p型摻雜區； 20〜層間介電層； 30〜透明導電層； 50〜像素區； 70〜p型薄膜電晶體； 90〜儲存電容器； 102〜透明基板； 106A〜通道區； 106B、106D〜源極/汲極區； 106C~輕度摻雜源極/汲極區； 110A、110B〜閘電極； 108〜閘絕緣層； 0773-A33604TWF P2008007 15 200947089 110C〜第二電極； 114、116、118〜導電構件 124、124’〜第二膜層； 128〜平坦層/保護層； 132、134〜開口； 136A〜頂電極； 150〜像素區， 170〜p 型 TFT ; 195〜感光裝置； 400〜輸入裝置； OP1、OP2〜接觸孔。 112〜層間介電層； ;122、122’〜第一膜層； 126〜第三膜層； 130、130’〜感光元件； 136~像素電極； 140~驅動電路區； 160、180~n 型 TFT ; 190~儲存電容器； 300〜顯示面板； 500〜感光裝置； 0773-A33604TWF P2008007 16

Claims (1)

  1. 200947089 七、申請專利範圍： 1. 一種影像顯示系統，包括： 一薄膜電晶體陣列基板，包括； 一基板，具有由複數個薄膜電晶體所組成之陣列；以 及 至少一感光元件，設置於該基板上，其中該感光元件 包括非晶矽膜層且具有垂直於該基板之一電流方向。 2. 如申請專利範圍第1項所述之影像顯示系統，其中 φ 該感光元件係為NI、IN、PI、IP、NIP或PIN之堆疊結構， N代表一 η型矽層，I代表未經摻雜之非晶矽層，而P代表 Ρ型；6夕層。 3. 如申請專利範圍第1項所述之影像顯示系統，更包 括設置於該感光元件下方之一底電極以及設置於該感光元 件上方之一頂電極。 4. 如申請專利範圍第3項所述之影像顯示系統，其中 該頂電極包括透明導電材料。 ❹ 5.如申請專利範圍第1項所述之影像顯示系統，其中 該該薄膜電晶體包括由微多晶矽、非晶矽、多晶矽、氧化 鋅或金屬氧化物半導體材料所形成之一主動層。 6. 如申請專利範圍第1項所述之影像顯示系統，其中 該薄膜電晶體具有一頂閘極結構或一底閘極結構。 7. 如申請專利範圍第1項所述之影像顯示系統，其中 該些薄膜電晶體包括： 具有一源極/汲極區之一主動層，位於該基板上； 一閘絕緣層，位於該主動層之上； 0773-A3S604TWF Ρ2008007 17 200947089 一閘極，位於該閘絕緣層上； 一第一介電層，位於該閘極之上； 一接觸孔，位於該第一介電層内，露出該源極/汲極 區，以及 一源極/汲極電極，形成於該源極/汲極區之上並穿過 該接觸孔，其中該源極/汲極電極與該頂電極係形成於該第 一介電層之上。 8. 如申請專利範圍第1項所述之影像顯示系統，其中 該些薄膜電晶體包括： 一閘極，位於該基板上； 一閘絕緣層，位於該閘極上； 一主動層，位於該閘絕緣層上；以及 一源極/汲極電極，位於該主動層上，其中該源極/汲 極電極與該底電極皆位於該閘絕緣層上。 9. 如申請專利範圍第1項所述之影像顯示系統，其中 該基板上包括一像素區與一驅動電路區，而該至少一感光 元件係位於該像素區内、該驅動電路區内或該像素區與該 驅動電路區内。 10. 如申請專利範圍第9項所述之影像顯示系統，更包 括一儲存電容器位於該像素區内，其中該至少一感光元件 係位於該儲存電容器之上方。 11. 如申請專利範圍第1項所述之影像顯示系統，更包 括複數個感光元件，其中該些感光元件係電性上相串聯。 12. 如申請專利範圍第1項所述之影像顯示系統，更包 括複數個感光元件，其中該些感光元件係電性上相並聯。 0773-A33604TWF P2008007 18 200947089 13. 如申請專利範圍第1項所述之影像顯示系統，更包 括一顯示面板，其中該薄膜電晶體陣列基板係為該顯示面 板之一部分。 14. 如申請專利範圍第13項所述之影像顯示系統，更 包括一電子裝置，其中該電子裝置包括： 該顯示面板；以及 一輸入裝置，耦接於該顯示面板以於操作時輸入訊號 至該顯示面板並使得該顯示面板產生影像。 @ 15.如申請專利範圍第14項所述之影像顯示系統，其 中該電子裝置為行動電話、數位相機、個人資訊輔助者 PDA、筆記型電腦、桌上型電腦、電視、車用顯示器、攜 帶型DVD播放器、全球定位系統、數位相框或導航螢幕。 16. —種影像顯示系統之製造方法，包括： 提供具有一薄膜電晶體陣列之一基板； 於該基板上形成一底電極； 於該底電極上形成包括一非晶石夕膜層之一感光元 ❹ 件；以及 形成一頂電極於該感光元件之上。 17. 如申請專利範圍第16項所述之影像顯示系統之製 造方法，更包括： 形成包括一源極/汲極區之一主動層於該基板之上； 形成一閘絕緣層於該主動層之上； 形成一閘極於該閘絕緣層之上，其中該主動層、該閘 絕緣層與該閘極形成了具有頂閘極結構之一薄膜電晶體； 形成一第一介電層於該薄膜電晶體之上； 0773-A33604TWF P2008007 19 200947089 形成一接觸孔於該第一介電層内，露出該薄膜電晶體 之一源極/汲極區； 形成第導電層於該第一介電層與該接觸孔之 上；以及 圖案化該導電層’以形成該底電極以及接觸該源極/ 汲極區之一源極/没極電極。 18.如申請專利範圍第16項所述之影像顯示系統之製 造方法，更包括： 形成一閘極於該基板之上； 形成一第一介電層於該閘極之上； 上 形成包括-源極/汲極層之一主動層於該第一介電層 上 形成一第一導電層於該主動層與該第一 以及 介電層之 r圖案化該導電層以形成該底電極與接觸該源極/沒極 區之一源極/沒極電極。 19.如申請專利範圍第18項 ^ ^ ^ ( 貝所迷之衫像顯示系統之製 造方法，更包括： 形成一第一介電層於該第一介電層之上· 形成一第一開口與一第二開口於該第二介電層内，露 出該源極/汲極電極與該感光元件； 形成一第二導電層於該第二介 與該第二開口内；以及 丨電層上與該第-開口 及極導電.層以形成該項電極與接觸該源極/ /及極電極之一像素電極。 0773-A33604TWF P2008007 20
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