TW200943543A - Method for manufacturing solid-state imaging device - Google Patents

Method for manufacturing solid-state imaging device

Info

Publication number
TW200943543A
TW200943543A TW098101096A TW98101096A TW200943543A TW 200943543 A TW200943543 A TW 200943543A TW 098101096 A TW098101096 A TW 098101096A TW 98101096 A TW98101096 A TW 98101096A TW 200943543 A TW200943543 A TW 200943543A
Authority
TW
Taiwan
Prior art keywords
oxygen
charge generator
detection plane
metal film
charge
Prior art date
Application number
TW098101096A
Other languages
English (en)
Other versions
TWI409941B (zh
Inventor
Susumu Hiyama
Tomoyuki Hirano
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200943543A publication Critical patent/TW200943543A/zh
Application granted granted Critical
Publication of TWI409941B publication Critical patent/TWI409941B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
TW098101096A 2008-02-19 2009-01-13 製造固態成像裝置之方法 TWI409941B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008037037A JP5136110B2 (ja) 2008-02-19 2008-02-19 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
TW200943543A true TW200943543A (en) 2009-10-16
TWI409941B TWI409941B (zh) 2013-09-21

Family

ID=40955493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098101096A TWI409941B (zh) 2008-02-19 2009-01-13 製造固態成像裝置之方法

Country Status (5)

Country Link
US (2) US7968365B2 (zh)
JP (1) JP5136110B2 (zh)
KR (1) KR20090089790A (zh)
CN (2) CN102214671B (zh)
TW (1) TWI409941B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI554110B (zh) * 2014-08-21 2016-10-11 豪威科技股份有限公司 影像感測器及製造其之方法
US9476773B2 (en) 2012-08-01 2016-10-25 Hamamatsu Photonics K.K. Composite sensor and composite sensor module having first and second substrates mounted to form a seal body about a thermal image sensor with a range image sensor arranged with the second substrate

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151375B2 (ja) * 2007-10-03 2013-02-27 ソニー株式会社 固体撮像装置およびその製造方法および撮像装置
JP5136110B2 (ja) * 2008-02-19 2013-02-06 ソニー株式会社 固体撮像装置の製造方法
JP2009283902A (ja) * 2008-04-25 2009-12-03 Panasonic Corp 光学デバイスとこれを備えた電子機器
JP5374980B2 (ja) * 2008-09-10 2013-12-25 ソニー株式会社 固体撮像装置
JP2010206178A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置、及び光電変換装置の製造方法
JP5347999B2 (ja) * 2009-03-12 2013-11-20 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
KR20100108109A (ko) * 2009-03-27 2010-10-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR101680899B1 (ko) * 2009-09-02 2016-11-29 소니 주식회사 고체 촬상 장치 및 그 제조 방법
JP5306141B2 (ja) * 2009-10-19 2013-10-02 株式会社東芝 固体撮像装置
US8697474B2 (en) * 2010-01-13 2014-04-15 California Institute Of Technology Methods to fabricate and improve stand-alone and integrated filters
JP6081694B2 (ja) * 2010-10-07 2017-02-15 株式会社半導体エネルギー研究所 光検出装置
TWI548073B (zh) * 2011-12-14 2016-09-01 Sony Corp Solid-state imaging devices and electronic equipment
US9379275B2 (en) 2012-01-31 2016-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for reducing dark current in image sensors
JP5801245B2 (ja) 2012-04-09 2015-10-28 株式会社東芝 固体撮像装置
US9659981B2 (en) * 2012-04-25 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor with negatively charged layer
JP2014086553A (ja) * 2012-10-23 2014-05-12 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
US8816462B2 (en) * 2012-10-25 2014-08-26 Omnivision Technologies, Inc. Negatively charged layer to reduce image memory effect
US20140252521A1 (en) * 2013-03-11 2014-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Image Sensor with Improved Dark Current Performance
US9224881B2 (en) * 2013-04-04 2015-12-29 Omnivision Technologies, Inc. Layers for increasing performance in image sensors
JP6595750B2 (ja) * 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
JP2016201497A (ja) * 2015-04-13 2016-12-01 株式会社東芝 固体撮像装置の製造方法
JP2016207831A (ja) * 2015-04-22 2016-12-08 キヤノン株式会社 光電変換装置の製造方法
JP2019091936A (ja) * 2019-02-27 2019-06-13 株式会社東芝 固体撮像装置の製造方法
US11830739B2 (en) 2020-10-07 2023-11-28 Applied Materials, Inc. Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions
CN112117292A (zh) * 2020-11-03 2020-12-22 联合微电子中心有限责任公司 降低图像传感器表面暗电流的方法及图像传感器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332547A (ja) * 2000-03-17 2001-11-30 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP3759435B2 (ja) 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
CN100565916C (zh) * 2002-07-16 2009-12-02 日本电气株式会社 半导体器件及其制造方法
KR101079757B1 (ko) * 2002-10-30 2011-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법
JP2004200321A (ja) * 2002-12-17 2004-07-15 Fuji Film Microdevices Co Ltd 固体撮像素子およびその製造方法
JP2004335804A (ja) * 2003-05-08 2004-11-25 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
US7148525B2 (en) * 2004-01-12 2006-12-12 Micron Technology, Inc. Using high-k dielectrics in isolation structures method, pixel and imager device
US20050274996A1 (en) * 2004-06-14 2005-12-15 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and method for manufacturing the same
JP4711645B2 (ja) * 2004-06-25 2011-06-29 富士フイルム株式会社 固体撮像素子およびその製造方法
JP2007048893A (ja) * 2005-08-09 2007-02-22 Fujifilm Corp 固体撮像素子およびその製造方法
US7619266B2 (en) * 2006-01-09 2009-11-17 Aptina Imaging Corporation Image sensor with improved surface depletion
JP2007184467A (ja) * 2006-01-10 2007-07-19 Fujifilm Corp 固体撮像素子
JP4992446B2 (ja) * 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
CN101079967B (zh) * 2006-02-24 2013-07-10 索尼株式会社 固态成像装置及其制造方法、以及摄像机
JP5136110B2 (ja) * 2008-02-19 2013-02-06 ソニー株式会社 固体撮像装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9476773B2 (en) 2012-08-01 2016-10-25 Hamamatsu Photonics K.K. Composite sensor and composite sensor module having first and second substrates mounted to form a seal body about a thermal image sensor with a range image sensor arranged with the second substrate
TWI576982B (zh) * 2012-08-01 2017-04-01 Hamamatsu Photonics Kk Composite sensor and composite sensor module
TWI554110B (zh) * 2014-08-21 2016-10-11 豪威科技股份有限公司 影像感測器及製造其之方法

Also Published As

Publication number Publication date
KR20090089790A (ko) 2009-08-24
CN101515567B (zh) 2011-07-27
US7968365B2 (en) 2011-06-28
CN101515567A (zh) 2009-08-26
CN102214671B (zh) 2013-10-16
CN102214671A (zh) 2011-10-12
JP5136110B2 (ja) 2013-02-06
US20110237014A1 (en) 2011-09-29
TWI409941B (zh) 2013-09-21
JP2009200086A (ja) 2009-09-03
US20090209056A1 (en) 2009-08-20
US8574941B2 (en) 2013-11-05

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees