TW200939346A - Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography - Google Patents

Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography Download PDF

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Publication number
TW200939346A
TW200939346A TW098103572A TW98103572A TW200939346A TW 200939346 A TW200939346 A TW 200939346A TW 098103572 A TW098103572 A TW 098103572A TW 98103572 A TW98103572 A TW 98103572A TW 200939346 A TW200939346 A TW 200939346A
Authority
TW
Taiwan
Prior art keywords
layer
adhesion promoting
deposited
organic adhesion
photoresist
Prior art date
Application number
TW098103572A
Other languages
English (en)
Chinese (zh)
Inventor
Sudha Rathi
Eui-Kyoon Kim
Bok Hoen Kim
Martin Jay Seamons
Francimar C Schmitt
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200939346A publication Critical patent/TW200939346A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098103572A 2008-02-04 2009-02-04 Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography TW200939346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Publications (1)

Publication Number Publication Date
TW200939346A true TW200939346A (en) 2009-09-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103572A TW200939346A (en) 2008-02-04 2009-02-04 Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Country Status (6)

Country Link
US (1) US20090197086A1 (https=)
JP (1) JP2011511476A (https=)
KR (1) KR20100124265A (https=)
CN (1) CN101939818A (https=)
TW (1) TW200939346A (https=)
WO (1) WO2009099713A2 (https=)

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US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
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US11243465B2 (en) 2017-12-18 2022-02-08 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
US11972948B2 (en) 2018-06-13 2024-04-30 Brewer Science, Inc. Adhesion layers for EUV lithography
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US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102937721B1 (ko) 2019-06-28 2026-03-12 램 리써치 코포레이션 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
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Also Published As

Publication number Publication date
JP2011511476A (ja) 2011-04-07
WO2009099713A2 (en) 2009-08-13
KR20100124265A (ko) 2010-11-26
US20090197086A1 (en) 2009-08-06
CN101939818A (zh) 2011-01-05
WO2009099713A3 (en) 2009-10-08

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