JP2011511476A - 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 - Google Patents

乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 Download PDF

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JP2011511476A
JP2011511476A JP2010545914A JP2010545914A JP2011511476A JP 2011511476 A JP2011511476 A JP 2011511476A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2011511476 A JP2011511476 A JP 2011511476A
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Japan
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layer
adhesion promoting
organic adhesion
deposited
promoting layer
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JP2010545914A
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Japanese (ja)
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JP2011511476A5 (https=
Inventor
スダ ラティ，
ウィ キュン キム，
ボク ホエン キム，
マーチン ジェイ シーモンズ，
フランシマー シー． シュミット，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2011511476A publication Critical patent/JP2011511476A/ja
Publication of JP2011511476A5 publication Critical patent/JP2011511476A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010545914A 2008-02-04 2009-01-12 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 Pending JP2011511476A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
PCT/US2009/030709 WO2009099713A2 (en) 2008-02-04 2009-01-12 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Publications (2)

Publication Number Publication Date
JP2011511476A true JP2011511476A (ja) 2011-04-07
JP2011511476A5 JP2011511476A5 (https=) 2012-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010545914A Pending JP2011511476A (ja) 2008-02-04 2009-01-12 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消

Country Status (6)

Country Link
US (1) US20090197086A1 (https=)
JP (1) JP2011511476A (https=)
KR (1) KR20100124265A (https=)
CN (1) CN101939818A (https=)
TW (1) TW200939346A (https=)
WO (1) WO2009099713A2 (https=)

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WO2014162983A1 (ja) * 2013-04-05 2014-10-09 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance
US12601974B2 (en) 2019-06-28 2026-04-14 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist

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US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography
KR101622714B1 (ko) 2009-02-11 2016-05-19 뉴사우스 이노베이션즈 피티와이 리미티드 광전 디바이스 구조 및 방법
EP2315234A1 (en) * 2009-10-20 2011-04-27 Applied Materials, Inc. Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices
CN102543715A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 无氮介电抗反射薄膜的制作方法
CN103794485A (zh) * 2012-11-02 2014-05-14 中芯国际集成电路制造(上海)有限公司 多晶硅结构的形成方法
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
DE102017122708A1 (de) * 2017-09-29 2019-04-04 Psc Technologies Gmbh Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht
US11243465B2 (en) 2017-12-18 2022-02-08 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
US11972948B2 (en) 2018-06-13 2024-04-30 Brewer Science, Inc. Adhesion layers for EUV lithography
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상

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JPH0635206A (ja) * 1992-07-17 1994-02-10 Toshiba Corp パターン形成方法
JPH0876352A (ja) * 1994-09-09 1996-03-22 Oki Electric Ind Co Ltd パターン形成方法
JPH08172039A (ja) * 1994-12-16 1996-07-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
JP2004513515A (ja) * 2000-10-31 2004-04-30 モトローラ・インコーポレイテッド ホトレジストの改良形接着用アモルファス炭素層
US20050048771A1 (en) * 2002-09-27 2005-03-03 Advanced Micro Devices, Inc. Hardmask employing multiple layers of silicon oxynitride

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US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
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TW200503066A (en) * 2003-07-07 2005-01-16 Macronix Int Co Ltd Process for reworking semiconductor patterned photoresist layer
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US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050118541A1 (en) * 2003-11-28 2005-06-02 Applied Materials, Inc. Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes
US7285853B2 (en) * 2005-02-17 2007-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
DE102006046364A1 (de) * 2006-09-29 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale ARC-Schicht mit geringerer Neigung zum Ablösen und Verfahren zur Herstellung derselben
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography

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Publication number Priority date Publication date Assignee Title
JPH0635206A (ja) * 1992-07-17 1994-02-10 Toshiba Corp パターン形成方法
JPH0876352A (ja) * 1994-09-09 1996-03-22 Oki Electric Ind Co Ltd パターン形成方法
JPH08172039A (ja) * 1994-12-16 1996-07-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP2004513515A (ja) * 2000-10-31 2004-04-30 モトローラ・インコーポレイテッド ホトレジストの改良形接着用アモルファス炭素層
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
US20050048771A1 (en) * 2002-09-27 2005-03-03 Advanced Micro Devices, Inc. Hardmask employing multiple layers of silicon oxynitride

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014162983A1 (ja) * 2013-04-05 2014-10-09 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
US12601974B2 (en) 2019-06-28 2026-04-14 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
US12586765B2 (en) 2020-06-22 2026-03-24 Lam Research Corporation Surface modification for metal-containing photoresist deposition

Also Published As

Publication number Publication date
TW200939346A (en) 2009-09-16
WO2009099713A2 (en) 2009-08-13
KR20100124265A (ko) 2010-11-26
US20090197086A1 (en) 2009-08-06
CN101939818A (zh) 2011-01-05
WO2009099713A3 (en) 2009-10-08

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