KR20100124265A - 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거 - Google Patents

건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거 Download PDF

Info

Publication number
KR20100124265A
KR20100124265A KR1020107019452A KR20107019452A KR20100124265A KR 20100124265 A KR20100124265 A KR 20100124265A KR 1020107019452 A KR1020107019452 A KR 1020107019452A KR 20107019452 A KR20107019452 A KR 20107019452A KR 20100124265 A KR20100124265 A KR 20100124265A
Authority
KR
South Korea
Prior art keywords
layer
adhesion improving
organic adhesion
deposited
improving layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107019452A
Other languages
English (en)
Korean (ko)
Inventor
수드하 라티
김의균
김복헌
마틴 제이 세아몬스
프란시마 씨. 슈미트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20100124265A publication Critical patent/KR20100124265A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107019452A 2008-02-04 2009-01-12 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거 Ceased KR20100124265A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
US12/025,615 2008-02-04

Publications (1)

Publication Number Publication Date
KR20100124265A true KR20100124265A (ko) 2010-11-26

Family

ID=40931981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019452A Ceased KR20100124265A (ko) 2008-02-04 2009-01-12 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거

Country Status (6)

Country Link
US (1) US20090197086A1 (https=)
JP (1) JP2011511476A (https=)
KR (1) KR20100124265A (https=)
CN (1) CN101939818A (https=)
TW (1) TW200939346A (https=)
WO (1) WO2009099713A2 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography
KR101622714B1 (ko) 2009-02-11 2016-05-19 뉴사우스 이노베이션즈 피티와이 리미티드 광전 디바이스 구조 및 방법
EP2315234A1 (en) * 2009-10-20 2011-04-27 Applied Materials, Inc. Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices
CN102543715A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 无氮介电抗反射薄膜的制作方法
CN103794485A (zh) * 2012-11-02 2014-05-14 中芯国际集成电路制造(上海)有限公司 多晶硅结构的形成方法
JP2014202969A (ja) * 2013-04-05 2014-10-27 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
DE102017122708A1 (de) * 2017-09-29 2019-04-04 Psc Technologies Gmbh Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht
US11243465B2 (en) 2017-12-18 2022-02-08 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
US11972948B2 (en) 2018-06-13 2024-04-30 Brewer Science, Inc. Adhesion layers for EUV lithography
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102937721B1 (ko) 2019-06-28 2026-03-12 램 리써치 코포레이션 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
JP3128335B2 (ja) * 1992-07-17 2001-01-29 株式会社東芝 パターン形成方法
JP3392231B2 (ja) * 1994-09-09 2003-03-31 沖電気工業株式会社 パターン形成方法
JP3422580B2 (ja) * 1994-12-16 2003-06-30 三菱電機株式会社 半導体装置の製造方法
US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
US6440878B1 (en) * 2000-04-03 2002-08-27 Sharp Laboratories Of America, Inc. Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
JP2002194547A (ja) * 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
US6580170B2 (en) * 2000-06-22 2003-06-17 Texas Instruments Incorporated Semiconductor device protective overcoat with enhanced adhesion to polymeric materials
US6368924B1 (en) * 2000-10-31 2002-04-09 Motorola, Inc. Amorphous carbon layer for improved adhesion of photoresist and method of fabrication
JP3871029B2 (ja) * 2001-10-18 2007-01-24 信越化学工業株式会社 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
US7226853B2 (en) * 2001-12-26 2007-06-05 Applied Materials, Inc. Method of forming a dual damascene structure utilizing a three layer hard mask structure
US6803313B2 (en) * 2002-09-27 2004-10-12 Advanced Micro Devices, Inc. Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes
TW200503066A (en) * 2003-07-07 2005-01-16 Macronix Int Co Ltd Process for reworking semiconductor patterned photoresist layer
US6972255B2 (en) * 2003-07-28 2005-12-06 Freescale Semiconductor, Inc. Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050118541A1 (en) * 2003-11-28 2005-06-02 Applied Materials, Inc. Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes
US7285853B2 (en) * 2005-02-17 2007-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
DE102006046364A1 (de) * 2006-09-29 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale ARC-Schicht mit geringerer Neigung zum Ablösen und Verfahren zur Herstellung derselben
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography

Also Published As

Publication number Publication date
TW200939346A (en) 2009-09-16
JP2011511476A (ja) 2011-04-07
WO2009099713A2 (en) 2009-08-13
US20090197086A1 (en) 2009-08-06
CN101939818A (zh) 2011-01-05
WO2009099713A3 (en) 2009-10-08

Similar Documents

Publication Publication Date Title
KR20100124265A (ko) 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거
KR101046506B1 (ko) 이머전 리소그라피에서 패턴 붕괴를 방지하기 위한 플라즈마 표면처리
US8465903B2 (en) Radiation patternable CVD film
KR102430939B1 (ko) 반도체 디바이스 제조시 고품질 실리콘 옥사이드 막들의 저온 형성
US6764958B1 (en) Method of depositing dielectric films
US8125034B2 (en) Graded ARC for high NA and immersion lithography
KR101098632B1 (ko) 비정질 탄소 막의 ｃｖｄ 증착용 액체 전구체
US6927178B2 (en) Nitrogen-free dielectric anti-reflective coating and hardmask
US6853043B2 (en) Nitrogen-free antireflective coating for use with photolithographic patterning
US20110151142A1 (en) Pecvd multi-step processing with continuous plasma
US7855123B2 (en) Method of integrating an air gap structure with a substrate
US20220382159A1 (en) Metalorganic films for extreme ultraviolet patterning
US20040185674A1 (en) Nitrogen-free hard mask over low K dielectric
KR100477386B1 (ko) 심층 자외선 노출용 개선된 건식 사진평판 공정 처리방법
CN1768415A (zh) 在晶片流水线环境中通过等离子处理室处理半导体晶片的方法和装置
KR101106425B1 (ko) 질소-비함유 유전성 반사방지 코팅부 및 하드마스크
US20080311754A1 (en) Low temperature sacvd processes for pattern loading applications

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T12-X000 Administrative time limit extension not granted

St.27 status event code: U-3-3-T10-T12-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000