TW200937595A - Heater device, measurement device and thermal conductivity estimation method - Google Patents

Heater device, measurement device and thermal conductivity estimation method Download PDF

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Publication number
TW200937595A
TW200937595A TW097106971A TW97106971A TW200937595A TW 200937595 A TW200937595 A TW 200937595A TW 097106971 A TW097106971 A TW 097106971A TW 97106971 A TW97106971 A TW 97106971A TW 200937595 A TW200937595 A TW 200937595A
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Taiwan
Prior art keywords
heat
temperature
heating
film
substrate
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TW097106971A
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Chinese (zh)
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TWI434381B (en
Inventor
Susumu Ueda
Kenji Osawa
Katsuya Tsuruta
Toshiaki Kotani
Kei Mizuta
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Fuchigami Micro Co
Univ Kagoshima
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Publication of TW200937595A publication Critical patent/TW200937595A/en
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Publication of TWI434381B publication Critical patent/TWI434381B/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/24—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor being self-supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)

Abstract

A heater device (1) which generates heat by energizing a heater thin film (7) formed on a heater substrate (3) comprises the heater substrate (3), the plurality of heater thin films (7), and power feeding terminals (8) independently supplies power to the respective plurality of heater thin film (7). A plurality of sensor thin films (9) are formed on the bottom surfaces of the heater thin films (7). The heater device further comprises a mount substrate (4) on which the heater substrate (3) is mounted and held, and which has power-feeding-line thin films electrically connecting the respective heater thin films (7) and an external device, and sensor-line thin films (11), all formed on the top surface of the mount substrate.

Description

200937595 九、發明說明： 【發明所屬之技術領域】 本發明係關於用於評價傳熱機器效能之加熱裝置及測定裝置。 【先前技術】 • 熱管係為在封入有工作液之容器一端吸熱而使該工作液蒸發、 ' 並在該容器之另一端使該工作液凝結而放熱之裝置，被應用於電 子機器之冷卻。例如，日本專利特開2007-208262號、特開 φ 2005-136117號中提出將熱管與散熱片組合之冷卻器（在本說明書 中稱為附熱管冷卻器），其將1C晶片等電子部件與熱管進行導熱 連接，以將電子部件所產生之熱透過熱管輸送至散熱片而放熱。 附熱管冷卻器之效能係以下式所表示之總熱阻RT進行評價： Rt=(T,-T2)/W (式 1) 其中，W係為熱管之單位時間傳熱量，T!係為附熱管冷卻器之 吸熱部之溫度（=冷卻對象之表面溫度），τ2係為附熱管冷卻器之周 圍環境之溫度。 ® 或者，亦存在取代總熱阻RT而使用工作熱阻Rw之情形。工作 熱阻Rw係用下式表示： RW=(T厂 T，2)/W (式 2) 其中，丁’2係為附熱管冷卻器之放熱部之溫度。 另外，附熱管冷卻器之製造商係用如下方法逐一量測附熱管冷 卻器之總熱阻RT，以確認其滿足預定標準： (1)在測定附熱管冷卻器之吸熱部之溫度（=冷卻對象之表面溫 度）乃之同時，用電加熱器加熱； 6 200937595 (2) T!隨時間而緩慢上升，但不久放熱量與發熱量達到平衡，使 乃成為一定（穩定狀態）； (3) 測定Τ,成為一定時之周圍環境溫度Τ2及電加熱器之耗電 量，算出附熱管冷卻器之總熱阻RT (達到穩定狀態時附熱管冷卻 器之傳熱量W等於電加熱器之發熱量，電加熱器之發熱量可由耗 . 電量算出）。 【發明内容】 φ 【本發明所要解決之課題】 然而，根據上述方法測定總熱阻RT存在如下問題。 為使電加熱器之發熱量等於附熱管冷卻器之傳熱量（=放熱 量），必須進行絕熱，以使電加熱器之熱量不向附熱管冷卻器以外 散發。因此，存在電加熱器尺寸和重量變大之問題。 另外，由於電加熱器難以完全絕熱，且尚無用以測定及修正散 發至外部之熱量之手段，因而存在不能正確進行測定之問題。 另外，1C晶片等會存在發熱部位不均之情形。即，會存在1C晶 ® 片之特定部位出現高溫之情形。業界在為此而尋求重現此種現象 以評價附熱管冷卻器效能之方法，但此需要準備專用之電加熱器。 本發明即為解決該等課題而提出，旨在提供適可測定附熱管冷 卻器之熱阻之加熱裝置。本發明亦提供適可測定附熱管冷卻器之 熱阻之測定裝置。另外，本發明亦提供用以簡易地估計附熱管冷 卻器之有效導熱率之方法。 【解決課題之手段】 為達成上述目的，本發明之加熱裝置係藉由對形成於基板表面 7 200937595 之加熱薄膜通電而進行發熱之加熱裝置，其特徵在於設有複數個 加熱薄膜和對該複數個加熱薄膜分別獨立供電之供電端子。 另外，亦可將該等供電端子形成於該基板之底面，並設置用以 使該等供電端子與該等加熱薄膜電性連接之通孔。 另外，亦可於該基板之底面上形成複數個感測薄膜。 . 另外，於設置並保持該基板之同時，亦設有一安裝基板，其上 形成用以使該等加熱薄膜和該等感測薄膜與一外部機器電性連接 之配線圖案。 ◎ 另外，該配線圖案於各該供電端子處設有複數條供電線路，將 與該等供電端子接觸之一始端和位於該安裝基板之邊緣部且與該 外部機器連接之一終端連通，並且該複數條供電線路之長度全部 相等。 另外，本發明之測定裝置之特徵在於，該測定裝置係由該加熱 裝置和該控制裝置構成，且該控制裝置具有：電力控制手段，用 以供給該等加熱薄膜預定電力；感測控制手段，用以量測該等感 p 測薄膜及該等加熱薄膜之溫度；運算手段，用以根據該感測控制 手段所量測之該等感測薄膜及該等加熱薄膜之溫度，算出從該基 板底面流出之一流出熱量。 另外，該運算手段可根據該感測控制手段所量測之該等感測薄 膜之溫度，算出該基板底面之一溫度分佈。 另外，該運算手段可根據由該電力控制手段供給該等加熱薄膜 之電力，算出從該等加熱薄膜產生之一發熱量。 另外，該運算手段可從該等加熱薄膜所產生之發熱量中減去從 8 200937595 該基板底面流出之流出熱量，而算出從該等加熱薄膜上所放出之 一放出熱量。 另外，設有用以測定該測定裝置之周圍環境溫度之環境溫度測 定手段，同時該運算手段係根據該環境溫度測定手段所檢出之溫 度、該感測控制手段所量測之該等加熱薄膜之溫度、以及從該等 加熱薄膜之上面所放出之一放熱量，而算出設於該等加熱薄膜上 之測試體之熱阻。 另外，設有放熱部溫度測定手段，用以測定設於該等加熱薄膜 上之該測試體之放熱部之表面溫度，同時該運算手段係根據該放 熱部溫度測定手段所檢出之溫度、該感測控制手段所量測之該等 加熱薄膜之溫度以及從該等加熱薄膜上面所放出之放熱量，而算 出該測試體之熱阻。 另外，設有溫度監視手段，用以監視該感測控制手段所量測之 該等加熱薄膜之溫度之時間變化，同時該運算手段於該等加熱薄 膜之溫度無時間變化時，算出該測試體之熱阻。 本發明之導熱率估計方法之特徵在於包含下列步驟：一預備量 測步驟，將一導熱率已知之放熱體，設置於熱源上，在該熱源之 發熱量與放熱量達到均衡、從而使該熱源之溫度達到一定之穩定 狀態下，量測該放熱體之溫度分佈；一計算步驟，求解關於該放 熱體和該熱源之熱傳導方程式，計算在該熱源之發熱量和放熱量 達到均衡且該熱源之溫度達到一定之穩定狀態下，該放熱體之溫 度分佈；一邊界條件決定步驟，比較該預備量測步驟所得之温度 分佈和該計算步驟所得之溫度分佈，決定使二者達到一致之該熱 9 200937595 傳導方程式之一邊界條件；一穩定溫度估計步驟，代入該放熱體 之導熱率，求解利用由該邊界條件決定步驟所決定之邊界條件之 該熱傳導方程式，估計該熱源之發熱量和放熱量達到均衡且該熱 源之溫度達到一定之穩定狀態下該熱源之溫度；一近似式決定步 驟，根據該穩定溫度估計步驟所得到之該放熱體之導熱率與該熱 源溫度之關係，決定表示二者關係之近似式；一測試體量測步驟， 將測試體設置於熱源上，量測該熱源之發熱量與放熱量達到均衡 且該熱源之溫度達到一定時該熱源之溫度；以及一導熱率估計步 驟，根據該測試體量測步驟所得之該熱源之溫度和該近似式決定 步驟所得之近似式，求出該測試體之導熱率。 該熱源可係為與上述任一結構有關之加熱裝置。 【發明效果】 本發明之加熱裝置能夠獨立控制複數個加熱薄膜，因此能夠模 擬發熱偏於特定部位之熱源。另外，本發明之加熱裝置能夠檢出 基板表面及底面之溫度，因此，能夠算出流出至基板底面之熱量。 本發明之測定裝置能夠藉由從加熱薄膜產生之熱量中減去流出 至基板底面之熱量，而算出測試體所傳導之淨熱量。另外，能夠 自動量測測試體之熱阻。 根據本發明之導熱率估計方法，將測試體置於熱源上，僅量測 熱源溫度達到穩定狀態時之溫度便可獲知測試體之導熱率。 【實施方式】 以下就實施本發明之最佳形態進行説明。 [加熱裝置之總體結構] 200937595 第1圖係為表示本發明加熱裝置之概念結構之側面圖。如第ι 圖所示，加熱裝置1係用以加熱附熱管冷卻器2之裝置，其係由 加熱基板3及安裝基板4所構成。 此外，附熱管冷卻器2具有熱管5和散熱片6,係為藉由與圯 晶片（未圖示）接觸以將IC晶片所產生之熱量經熱管5輸送至散 熱片6而放熱之冷卻器。 加熱基板3係由耐熱性陶瓷構成，其表面上形成複數個加熱薄 0 膜7另外，加熱基板3上設有通孔（未圖示），供電端子8穿過 該通孔而從加熱基板3之底面突出。供電端子8係為供給加熱薄 膜7電力之端子，加熱薄膜7經由供電端子8供電而發熱。另外， 藉由測定供電端子8間之電阻，即可得知加熱薄膜7之溫度。 另外，加熱基板3之底面設有複數個感測薄膜9。藉由測定感測 薄膜9之電阻，即可得知加熱基板3底面之溫度。 女裝基板4係用以設置並固定加熱基板3之石英基板，加熱基 板3係藉由緊固件（未圖示）而固定於安裝基板4上之預定位置。 © ^外，於*裝基板4之表面形成供t用配線薄膜⑺及感測用配線 薄膜11。供電用配線薄膜10係為從外部機器（未圖示）至加熱薄 膜7之供電用配線圖案，感測用配線薄膜u則係為使外部機器與 感測薄膜9電性連接之配線圖案。 [加熱基板之表面] 第2圖係為加熱基板3之外形圖，其中⑷係為其表面之平面圖、 (b)係為設有加熱薄膜7之部位之放、（e)係為—局部剖面圖。 如第2圖⑷所示’加熱基板3形成為邊長5〇_之正方形其 11 200937595 中央形成有邊長l〇mm之正方形加熱面12。加熱面12係模擬附熱 e冷卻器2之冷卻對象（即1(2晶片）之部分，有5個加熱薄膜7。 另外，如第2圖（b)所示，在加熱面12上設於其中央之正方形加 熱薄膜7周圍，配置4個L字形加熱薄膜7。另外，在加熱薄膜7 之端部设有供電端子8，每個加熱薄膜各設2個，供電端子8從加 熱基板3之表面貫穿至底面之通孔13後，突出於加熱基板3之底 面（參照第2圖（c))。再者’加熱基板3之厚度係為約。 e 如此，在5個加熱薄膜7上分別設有供電端子8,因此，可分別 獨立地控制树5個加熱薄臈7。即，可通電至5個加熱薄膜7 之-部分上，並可調節特定加熱薄膜7之發熱量，因此能夠模擬 發熱部位不均之IC晶片。 另外，加熱薄膜7之材料係選自在通電後能發熱、且其電阻隨 溫度而變化之物質中之適當材料，在本實施形態中餘用銘。 [加熱基板之底面] 第3圖係為表示加熱基板3之底面之平面圖，其中⑷係為一總 體圖、（b)係為感測薄膜9之—放大圖。 如第3圖⑷所示’橫向與斜向（對角線方向）地在加熱基板3之 底面上佈置9個感測薄膜9。如下文所述，選擇此種佈置係為了根 據從9個感測薄膜9所得之溫度資料來估計加熱基板3底面之确 體溫度分佈。另外，選擇在不與加熱薄膜7之供電端子8相干涉(相 重疊）之部位配置感测薄臈9。 另外，感測薄膜9 3圖（b)所示之圖案。 係呈邊長為約2.4mm之正方形，並具有如第 另外，在感測薄膜9之圖案二端設有感測端 12 200937595 子14,藉由量測感測端子14間之電阻即可獲知感測薄膜9之溫度。 此外，感測薄膜9之材料可在其電阻隨溫度而變化之物質中適 當選擇，在本實施形態中係採用鉑。 [安裝基板] 第4圖係表示安裝基板4之表面之平面圖，其中（a)係為安裝基 板4之一單體、（b)則表示安裝基板4上搭載加熱基板3後之狀態。 如第4圖所示，安裝基板4係為邊長為150mm之正方形石英基 板，其表面上形成有10條供電用配線薄膜10和18條感測用配線 ❹ 薄膜11。 供電用配線薄膜10係為導電體薄膜，用以連接設於安裝基板4 邊緣部之電極墊15和設於安裝基板4中央部之連接墊16。電極墊 15係為用以電性連接未圖示之外部機器之連接部，連接墊16係為 與突出於加熱基板3底面之供電端子8相接觸之連接部。即，供 電用配線薄膜10係用作電性連接該外部機器和加熱薄膜7之配 線。 ❹ 此外，該10條供電用配線薄膜10之電極墊15與連接墊16之 相對位置關係各不相同，藉由按照電極墊15與連接墊16之相對 位置關係來使路徑彎折，使得從電極墊15至連接墊16之路徑長 度對於全部供電用配線薄膜10而言皆相等。此旨在消除因供電用 配線薄膜10之配線電阻之差異而造成發熱量和溫度之量測誤差。 感測用配線薄膜11係為導電體薄膜，用以連接設於安裝基板4 邊緣部之電極墊17和設於安裝基板4中央部之連接墊18。電極墊 17係用以電性連接未圖示之外部機器之連接部，連接墊18係與設 13 200937595 ；板3底面之感測薄膜9之感測端子14相接觸之連接部。 即感測用配線薄膜11係用作電性連接該外部機器與感測薄膜7 之配線。 此外’基於與供電舰線薄膜1()相狀理由，制用配線薄膜 11亦藉由路”折’而使得從電極墊Π至連接塾18之路徑長度 對於全部感測用配線薄膜11而言皆相等。 [熱阻之測定方法] 〇 第5圖係例示使用加熱裝置1測定附熱管冷卻器2之總熱阻11丁 之原理不意圖。 在第5圖中，wP係為單位時間内加熱薄膜7所產生之熱量，％ ^為單位時間内附熱管冷卻器2從加熱薄膜7吸权並排出至外部 環境之熱量、即附熱管冷卻器2每單位時間之傳熱量。另外，^ 係為單位時間内從加熱薄膜7背面經由加熱基板3排出至外部環 境之熱量。 另外T，係為加熱薄膜7之溫度，I係為外部環境之溫度，h 〇 係為加熱基板3底面之溫度。 附熱管冷卻器2之總熱阻RT係由下式計算··200937595 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a heating device and an measuring device for evaluating the performance of a heat transfer machine. [Prior Art] A heat pipe is a device that absorbs heat at one end of a container in which a working fluid is sealed to evaporate the working fluid, and condenses the working fluid at the other end of the container to release heat, and is applied to cooling of the electronic machine. For example, a cooler in which a heat pipe and a heat sink are combined (referred to as a heat pipe cooler in this specification), which is an electronic component such as a 1C wafer, is proposed in Japanese Patent Laid-Open Publication No. 2007-208262, No. 2005-136117. The heat pipe is thermally connected to dissipate heat generated by the electronic component through the heat pipe to the heat sink. The performance of the attached heat pipe cooler is evaluated by the total thermal resistance RT represented by the following formula: Rt = (T, -T2) / W (Formula 1) where W is the heat transfer amount per unit time of the heat pipe, and the T! The temperature of the heat absorbing portion of the heat pipe cooler (= surface temperature of the cooling object), τ2 is the temperature of the surrounding environment of the heat pipe cooler. ® Or, there is also a case where the total thermal resistance RT is used instead of the working thermal resistance Rw. The operating thermal resistance Rw is expressed by the following equation: RW = (T plant T, 2) / W (Formula 2) where D2 is the temperature of the heat radiating portion of the heat pipe cooler. In addition, the manufacturer of the heat pipe cooler measures the total thermal resistance RT of the attached heat pipe cooler one by one to confirm that it meets the predetermined standard: (1) Measuring the temperature of the heat absorbing portion of the heat pipe cooler (= cooling The surface temperature of the object is simultaneously heated by an electric heater; 6 200937595 (2) T! slowly rises with time, but soon the heat and heat are balanced, so that it becomes constant (steady state); (3) The measured enthalpy is determined as the ambient temperature Τ2 and the power consumption of the electric heater at a certain time, and the total thermal resistance RT of the heat pipe cooler is calculated (the heat transfer amount W of the heat pipe cooler is equal to the heat value of the electric heater when the steady state is reached) The heat generated by the electric heater can be calculated from the power consumption. SUMMARY OF THE INVENTION φ [Problems to be Solved by the Invention] However, the measurement of the total thermal resistance RT according to the above method has the following problems. In order for the electric heater to generate heat equal to the heat transfer amount (= heat release amount) of the heat pipe cooler, heat insulation must be performed so that the heat of the electric heater is not radiated outside the heat pipe cooler. Therefore, there is a problem that the size and weight of the electric heater become large. Further, since the electric heater is difficult to be completely insulated, and there is no means for measuring and correcting the heat radiated to the outside, there is a problem that the measurement cannot be performed correctly. In addition, there is a case where the heat generating portion is uneven in the 1C wafer or the like. That is, there is a case where a high temperature occurs in a specific portion of the 1C crystal ® sheet. The industry is seeking to reproduce this phenomenon to evaluate the effectiveness of the heat pipe cooler, but it requires a dedicated electric heater. SUMMARY OF THE INVENTION The present invention has been made to solve such problems, and aims to provide a heating device suitable for measuring the thermal resistance of a heat pipe cooler. The present invention also provides an assay device suitable for determining the thermal resistance of a heat pipe cooler. In addition, the present invention also provides a method for easily estimating the effective thermal conductivity of a heat pipe cooler. [Means for Solving the Problem] In order to achieve the above object, the heating device of the present invention is a heating device that generates heat by energizing a heating film formed on a substrate surface 7 200937595, characterized in that a plurality of heating films are provided and the plural Each of the heating films is independently powered by a power supply terminal. In addition, the power supply terminals may be formed on the bottom surface of the substrate, and through holes for electrically connecting the power supply terminals to the heating films may be provided. In addition, a plurality of sensing films may be formed on the bottom surface of the substrate. Further, while the substrate is disposed and held, a mounting substrate is also provided, and a wiring pattern for electrically connecting the heating film and the sensing film to an external device is formed thereon. In addition, the wiring pattern is provided with a plurality of power supply lines at each of the power supply terminals, and a start end contacting the power supply terminals and a terminal located at an edge portion of the mounting substrate and connected to the external device, and the wiring pattern The lengths of the multiple power supply lines are all equal. Further, the measuring device of the present invention is characterized in that the measuring device is constituted by the heating device and the control device, and the control device has: a power control means for supplying predetermined heating power to the heating films; and a sensing control means, The method for measuring the temperature of the sensing film and the heating film; and calculating means for calculating the temperature of the sensing film and the heating film measured by the sensing control means, and calculating the temperature from the substrate One of the bottom surfaces flows out of heat. Further, the calculation means calculates the temperature distribution of one of the bottom surfaces of the substrate based on the temperatures of the sensing films measured by the sensing control means. Further, the calculation means calculates the amount of heat generated from the heating film based on the electric power supplied to the heating film by the power control means. Further, the calculation means subtracts the heat of outflow from the bottom surface of the substrate from 8200937595 from the amount of heat generated by the heating film, and calculates the amount of heat released from the heating film. Further, an ambient temperature measuring means for measuring the ambient temperature of the measuring device is provided, and the calculating means is based on the temperature detected by the ambient temperature measuring means and the heated film measured by the sensing control means. The temperature and the amount of heat released from the upper surface of the heating film were used to calculate the thermal resistance of the test body provided on the heating film. Further, a heat releasing portion temperature measuring means for measuring a surface temperature of the heat radiating portion of the test body provided on the heating film, and the calculating means is based on a temperature detected by the heat releasing portion temperature measuring means, The thermal resistance of the test body is calculated by sensing the temperature of the heated film measured by the control means and the amount of heat released from the heated film. In addition, a temperature monitoring means is provided for monitoring the time change of the temperature of the heating film measured by the sensing control means, and the calculating means calculates the test body when the temperature of the heating film does not change with time. Thermal resistance. The thermal conductivity estimation method of the present invention is characterized in that it comprises the following steps: a preliminary measurement step of disposing a heat radiator having a known thermal conductivity on a heat source, and the heat generation and the heat release amount of the heat source are equalized, thereby making the heat source When the temperature reaches a certain steady state, the temperature distribution of the heat radiator is measured; a calculation step is performed to solve the heat conduction equation about the heat radiator and the heat source, and the heat generation and the heat release amount of the heat source are calculated to be equalized and the heat source is The temperature distribution of the exothermic body when the temperature reaches a certain steady state; a boundary condition determining step, comparing the temperature distribution obtained by the preliminary measuring step and the temperature distribution obtained by the calculating step, and determining the heat that is consistent with the two 200937595 One of the boundary conditions of the conduction equation; a stable temperature estimation step, substituting the thermal conductivity of the exothermic body, solving the heat conduction equation determined by the boundary condition determined by the boundary condition determining step, and estimating the heat generation and the heat release amount of the heat source Balanced and the temperature of the heat source reaches a certain steady state An approximation determining step, according to the relationship between the thermal conductivity of the exothermic body obtained by the stable temperature estimating step and the temperature of the heat source, determining an approximate expression indicating a relationship between the two; a test body measuring step, setting the test body Measuring, on the heat source, a temperature at which the heat generation and the heat release of the heat source are equalized and the temperature of the heat source reaches a certain temperature; and a thermal conductivity estimating step, according to the temperature of the heat source obtained by the measuring step of the test body The approximation formula obtained by the approximated step determines the thermal conductivity of the test body. The heat source can be a heating device associated with any of the above structures. [Effect of the Invention] The heating device of the present invention can independently control a plurality of heating films, and therefore can simulate a heat source that is heated to a specific portion. Further, since the heating device of the present invention can detect the temperature of the surface of the substrate and the bottom surface, it is possible to calculate the amount of heat flowing out to the bottom surface of the substrate. The measuring apparatus of the present invention can calculate the amount of heat transferred from the test body by subtracting the amount of heat flowing out from the heat generated by the heating film to the bottom surface of the substrate. In addition, the thermal resistance of the test body can be measured automatically. According to the thermal conductivity estimation method of the present invention, the test body is placed on a heat source, and the thermal conductivity of the test body can be known only by measuring the temperature at which the temperature of the heat source reaches a steady state. [Embodiment] Hereinafter, the best mode for carrying out the invention will be described. [Overall Structure of Heating Apparatus] 200937595 Fig. 1 is a side view showing the conceptual structure of the heating apparatus of the present invention. As shown in Fig. ι, the heating device 1 is a device for heating the heat pipe cooler 2, which is composed of a heating substrate 3 and a mounting substrate 4. Further, the heat pipe cooler 2 has a heat pipe 5 and a heat sink 6, which is a cooler which is heated by contact with a silicon wafer (not shown) to transfer heat generated by the IC wafer to the heat radiating fins 6 via the heat pipe 5. The heating substrate 3 is made of a heat-resistant ceramic, and a plurality of heating thin films 7 are formed on the surface thereof. Further, the heating substrate 3 is provided with a through hole (not shown) through which the power supply terminal 8 passes from the heating substrate 3. The bottom surface is prominent. The power supply terminal 8 is a terminal for supplying electric power to the heating film 7, and the heating film 7 is supplied with power via the power supply terminal 8 to generate heat. Further, by measuring the electric resistance between the power supply terminals 8, the temperature of the heating film 7 can be known. Further, a plurality of sensing films 9 are provided on the bottom surface of the heating substrate 3. By measuring the resistance of the sensing film 9, the temperature of the bottom surface of the substrate 3 can be known. The women's substrate 4 is for fixing and fixing the quartz substrate of the heating substrate 3, and the heating substrate 3 is fixed to a predetermined position on the mounting substrate 4 by a fastener (not shown). In addition, a wiring film (7) for t and a wiring film 11 for sensing are formed on the surface of the substrate 4. The power supply wiring film 10 is a power supply wiring pattern from an external device (not shown) to the heating film 7, and the sensing wiring film u is a wiring pattern for electrically connecting the external device and the sensing film 9. [Heating the surface of the substrate] Fig. 2 is a diagram showing the external shape of the heating substrate 3, wherein (4) is a plan view of the surface thereof, (b) is a portion where the heating film 7 is provided, and (e) is a partial section. Figure. As shown in Fig. 2 (4), the heating substrate 3 is formed into a square having a side length of 5 〇, and a square heating surface 12 having a side length of 10 mm is formed at the center of 2009. The heating surface 12 is a portion of the cooling target (i.e., 1 (2 wafer)) of the heating-heating ecooler 2, and has five heating films 7. Further, as shown in Fig. 2(b), the heating surface 12 is provided on the heating surface 12. Four L-shaped heating films 7 are disposed around the central square heating film 7. Further, power supply terminals 8 are provided at the ends of the heating film 7, and two heating films are provided, and the power supply terminals 8 are heated from the substrate 3. After the surface penetrates through the through hole 13 of the bottom surface, it protrudes from the bottom surface of the heating substrate 3 (see FIG. 2(c)). Further, the thickness of the heating substrate 3 is about e. Thus, the five heating films 7 are respectively The power supply terminal 8 is provided, so that the five heating thin tubes 7 can be independently controlled. That is, the heat can be applied to the portions of the five heating films 7, and the heat generation of the specific heating film 7 can be adjusted, so that it can be simulated. Further, the material of the heating film 7 is selected from a material which is capable of generating heat after being energized and whose electric resistance changes with temperature, and is used in the present embodiment. Bottom surface] Fig. 3 is a plane showing the bottom surface of the heating substrate 3. In the figure, (4) is a general view, and (b) is an enlarged view of the sensing film 9. As shown in Fig. 3 (4), the lateral direction and the oblique direction (diagonal direction) are on the bottom surface of the heating substrate 3. 9 sensing films 9 are arranged. As described below, this arrangement is selected to estimate the true body temperature distribution of the bottom surface of the heating substrate 3 based on the temperature data obtained from the nine sensing films 9. In addition, the selection is not with heating. The sensing thin film 9 is disposed in a portion where the power supply terminals 8 of the film 7 interfere with each other (overlapping). Further, the pattern shown in the pattern (b) of the sensing film 9 is formed in a square having a side length of about 2.4 mm and having For example, at the two ends of the pattern of the sensing film 9, a sensing end 12 200937595 14 is provided, and the temperature of the sensing film 9 can be known by measuring the resistance between the sensing terminals 14. Further, the sensing film 9 The material can be appropriately selected among substances whose electric resistance changes with temperature, and platinum is used in the present embodiment. [Installation Substrate] Fig. 4 is a plan view showing the surface of the mounting substrate 4, wherein (a) is a mounting substrate. 4 one of the monomers, and (b) means that the mounting substrate 4 is mounted with the heating substrate 3 In the state shown in Fig. 4, the mounting substrate 4 is a square quartz substrate having a side length of 150 mm, and ten power supply wiring films 10 and 18 sensing wirings 薄膜 film 11 are formed on the surface. The film 10 is a conductor film for connecting the electrode pad 15 provided on the edge of the mounting substrate 4 and the connection pad 16 provided at the central portion of the mounting substrate 4. The electrode pad 15 is electrically connected to an external portion (not shown). In the connection portion of the machine, the connection pad 16 is a connection portion that comes into contact with the power supply terminal 8 that protrudes from the bottom surface of the heating substrate 3. That is, the power supply wiring film 10 is used as a wiring for electrically connecting the external device and the heating film 7. Further, the relative positional relationship between the electrode pads 15 of the ten power supply wiring films 10 and the connection pads 16 is different, and the path is bent by the relative positional relationship between the electrode pads 15 and the connection pads 16, so that the slave electrodes are bent. The path length of the pad 15 to the connection pad 16 is equal for all of the power supply wiring films 10. This is intended to eliminate the measurement error of the heat generation amount and the temperature due to the difference in the wiring resistance of the power supply wiring film 10. The sensing wiring film 11 is a conductor film for connecting the electrode pads 17 provided on the edge portion of the mounting substrate 4 and the connection pads 18 provided on the central portion of the mounting substrate 4. The electrode pad 17 is for electrically connecting a connection portion of an external device (not shown), and the connection pad 18 is a connection portion that is in contact with the sensing terminal 14 of the sensing film 9 on the bottom surface of the board 3 200937595. That is, the wiring film 11 for sensing is used as a wiring for electrically connecting the external device and the sensing film 7. Further, based on the reason why the wiring film 11 is formed, the wiring film 11 is also folded by the path, so that the path length from the electrode pad to the connection pad 18 is made for all the sensing wiring films 11 [Measurement method of thermal resistance] 〇 Figure 5 illustrates the principle of measuring the total thermal resistance of the heat pipe cooler 2 using the heating device 1. In Fig. 5, the wP system is heated per unit time. The heat generated by the film 7, % ^, is the amount of heat per unit time of the heat pipe cooler 2 that is absorbed by the heat pipe cooler 2 and discharged to the external environment per unit time. The heat discharged to the external environment from the back surface of the heating film 7 via the heating substrate 3 per unit time. The temperature of T is the temperature of the heating film 7, and the temperature of I is the temperature of the external environment, and h is the temperature of the bottom surface of the heating substrate 3. The total thermal resistance RT of the heat pipe cooler 2 is calculated by the following formula··

Rt=(T,~T2)/Wf (式 3) 由於T】係為加熱薄膜7之溫度，可根據加熱薄膜7之電阻值算 出。另外，由於T2係為外部環境之溫度，可用公知之各種溫度量 測手段量測。因此，獲知Wf即可求得總熱阻汉丁。 此處，考置達到Tl之時間變化消失之狀態，即穩定狀態。在穩 疋狀，加熱薄膜7所生之熱量全部排出至外部，因此，下 ❹ 鲁 200937595 式成立： wp=Wf+wb (式 4) ·*· WF-Wp-WB (式 5) 由於WP係為單位時間内加熱薄膜7所產生之熱量，故能夠用加 熱薄膜7之耗電量乘以熱電變換效率而求得。另一方面，％係用 以下步驟算出。 又加熱薄膜7之面積為A、加熱基板3之板厚為卜由於與a相 比t很小，從加熱薄膜7之背面流入加熱基板3底面之熱量可被視 $垂直地流人加熱基板3,因此，下式成立。式中]係為加熱基 板3之導熱率。 WB = A.k.(T丨—T3)/t (式 6) 如前述’τ丨可從加熱薄膜7之電阻值算出。但是，l不能直接 使用感測薄膜9之測定值，乃因感測薄膜9並不位於加熱薄膜7 正下^㈣配M為了避免加熱薄膜7之供電端子8與感測薄膜 另外，根據設於加熱基板3底面之9個感測薄膜9之測定值估 計加熱基板3底面之溫度分佈，求得位於加蘭膜7正下方之加 熱基板3底面之溫度，即丁3。 職之溫度分佈適#配置加熱薄膜7,則鄰接感測薄膜 9之^的點之溫度’可視為對應於與_側感測薄膜9相隔之距離之 ^生夂化而求出。另外’在本實施形態中，由於感測薄膜9未相 對於加”,、基板3均等分佈，故在離開感測薄臈9之部位之溫卢估 計精度會㈣題’ “ ’由於加«们軸以加熱基板Γ之 15 200937595 中央附近’故可認為加熱基板3底面之溫度關於加熱基板3之中 心對稱分佈。因此，如第6圖所示，可認為部位A〜D之溫度與 設於部位A，〜D，之感測_ 9之測定值相等，可作出等溫線7 根據如此得到之加熱基板3底面之溫度分佈，若設加熱薄膜7 正下方之加熱基板3底面之溫度為Τ3，則可由式6求得％。 [量測裝置] 下文説明一種使用加熱裝置1自動量測附熱管冷卻器2之總執 φ 阻心或工作熱阻Rw之量測裝置21。 —第7圖係為表示量測褒置21之概念結構之結構圖。如第7圖所 不量測裝置21係由加熱裝置i、控制裝置22、電力控制裝置以、 感測控制裝置24及溫度感測器25、26構成。 控制裝置22係為-支配整個量測裝置η之電腦，電力控制穿 置23及感測控制裝置24則接受控制裝置22之指令而工作。 電力控制裝置23係、為用以按照控制裝置22之指令，供給加熱 裝置1之加熱薄膜7預定電力之裝置。 、 ❹ 感測控制裝置24係、按照控制裝置22之指令來駭感測薄膜9 之感測端子14間之電阻，而算出感測薄膜9之溫度。另外，感測 控制裝置24係按照控制襄置22之指令來測定加熱薄膜7之供電 端子8間之電阻，而算出加熱薄膜7之溫度。 溫度感測器25係為用以檢出外部環境（附熱管冷卻器2放熱之 空間^度之感測器。另外，溫度感測器26係為用以檢出附熱管 冷部益2之放熱部（散熱片6)之表面溫度之感測器。 [控制程式] 200937595 控制裝置22中裝有控制程式，控制裝置22係按控制程式來操 作電力控制裝置23等’並進行自動量測。第8圖表示在控制裝置 22上執行之一控制程式實例之流程。以下，按圖上所附之步驟編 號依次說明該控制程式。 (步驟1)電力控制裝置23供給加熱薄膜7預定電力而開始加 熱。如前述，例如給5個加熱薄膜7中之一部分供電，以模擬一 發熱部位不均之1C晶片； (步驟2)加熱開始後，感測控制裝置24測定加熱薄膜7之供 電端子8間之電阻並監視加熱薄膜7之溫度Τι之變化，直至達到 無變化狀態（穩定狀態）為止。達到無變化狀態後即進入步驟3 ; (步驟3)使感測控制裝置24算出感測薄膜9之溫度，並根據 ν、、σ果估°十加熱基板3底面之溫度分佈，並求出加熱薄膜7正 下方之加熱基板3底面之溫度τ3 ; (步驟4)根據TjT3，求出單位時間内從加熱基心底面流 出之熱量WB ;Rt = (T, ~ T2) / Wf (Formula 3) Since T is the temperature of the heating film 7, it can be calculated from the resistance value of the heating film 7. In addition, since T2 is the temperature of the external environment, it can be measured by various known temperature measuring means. Therefore, knowing Wf can find the total thermal resistance of Hanting. Here, the state in which the time change of T1 disappears is determined, that is, the steady state. In the steady state, the heat generated by the heating film 7 is completely discharged to the outside, and therefore, the lower jaw 200937595 formula is established: wp=Wf+wb (Formula 4) ·*· WF-Wp-WB (Formula 5) Since the heat generated by the film 7 is heated per unit time, it can be obtained by multiplying the power consumption of the heating film 7 by the thermoelectric conversion efficiency. On the other hand, % is calculated using the following procedure. Further, the area of the heating film 7 is A, and the thickness of the heating substrate 3 is small. Since t is small compared with a, the heat flowing from the back surface of the heating film 7 into the bottom surface of the heating substrate 3 can be heated to the substrate 3 by vertical flow. Therefore, the following formula is established. In the formula, the thermal conductivity of the heating substrate 3 is obtained. WB = A.k. (T丨 - T3) / t (Formula 6) The above "τ" can be calculated from the resistance value of the heating film 7. However, l can not directly use the measured value of the sensing film 9, because the sensing film 9 is not located under the heating film 7 (4) with M in order to avoid heating the film 7 of the power supply terminal 8 and the sensing film, according to The measured values of the nine sensing films 9 on the bottom surface of the substrate 3 are estimated to estimate the temperature distribution of the bottom surface of the heating substrate 3, and the temperature of the bottom surface of the heating substrate 3 directly below the Garland film 7 is determined. When the heating film 7 is disposed, the temperature of the point adjacent to the sensing film 9 can be determined as the distance from the distance from the _ side sensing film 9. In addition, in the present embodiment, since the sensing film 9 is not added with respect to the substrate 3, the substrate 3 is equally distributed, so the accuracy of the temperature measurement at the portion away from the sensing thin layer 9 will be (4) "' The shaft is heated to the vicinity of the center of the substrate 19 200937595. Therefore, it is considered that the temperature of the bottom surface of the heating substrate 3 is symmetrically distributed with respect to the center of the heating substrate 3. Therefore, as shown in Fig. 6, it can be considered that the temperatures of the portions A to D are equal to the measured values of the sensing _ 9 provided at the portions A, D, and the isotherms 7 can be made based on the bottom surface of the substrate 3 thus obtained. In the temperature distribution, if the temperature of the bottom surface of the heating substrate 3 directly under the heating film 7 is Τ3, the % can be obtained from the formula 6. [Measuring Apparatus] Hereinafter, a measuring apparatus 21 for automatically measuring the total φ center resistance or the working thermal resistance Rw of the heat pipe cooler 2 using the heating device 1 will be described. - Fig. 7 is a structural diagram showing the conceptual structure of the measuring device 21. As shown in Fig. 7, the measuring device 21 is composed of a heating device i, a control device 22, a power control device, a sensing control device 24, and temperature sensors 25, 26. The control unit 22 is a computer that governs the entire measuring unit n, and the power control unit 23 and the sensing control unit 24 operate in response to commands from the control unit 22. The power control device 23 is a device for supplying predetermined power to the heating film 7 of the heating device 1 in accordance with an instruction from the control device 22.感 The sensing control device 24 calculates the temperature of the sensing film 9 by sensing the resistance between the sensing terminals 14 of the film 9 in accordance with an instruction from the control device 22. Further, the sensing control unit 24 measures the electric resistance between the power supply terminals 8 of the heating film 7 in accordance with an instruction from the control unit 22, and calculates the temperature of the heating film 7. The temperature sensor 25 is used to detect the external environment (the sensor with the heat dissipation of the heat pipe cooler 2). In addition, the temperature sensor 26 is used to detect the heat release of the heat pipe cold portion. Sensor for surface temperature of the heat sink (heat sink 6) [Control program] 200937595 The control device 22 is equipped with a control program, and the control device 22 operates the power control device 23 and the like according to the control program and performs automatic measurement. 8 is a flow chart showing an example of executing a control program on the control device 22. Hereinafter, the control program will be sequentially described in accordance with the step numbers attached to the drawings. (Step 1) The power control device 23 supplies the heating film 7 with predetermined electric power to start heating. As described above, for example, one of the five heating films 7 is supplied with power to simulate a 1C wafer having a non-uniform heat generating portion; (Step 2) After the heating is started, the sensing control device 24 determines the connection between the power supply terminals 8 of the heating film 7. The resistance is monitored and the temperature of the heating film 7 is changed until the state of no change (steady state) is reached. When the state of no change is reached, the process proceeds to step 3; (step 3) the sensing control device 24 calculates the sensing. The temperature of the film 9 is estimated according to ν, σ, and the temperature distribution of the bottom surface of the substrate 3 is heated, and the temperature τ3 of the bottom surface of the heating substrate 3 directly under the heating film 7 is obtained; (Step 4) The unit is obtained according to TjT3. The amount of heat WB flowing out from the bottom of the heating base during the time;

(步驟5 )根據電力控制裝置23供給加熱薄膜 單位時間内加熱薄膜7上所產生之熱量Wp; 检6)根據w B及Wp，求出單位時間内附熱管冷卻器2所 輸达（放熱）之熱量WF: /步=7)根據溫度感測器25所檢出之外部環境溫度L及丁|、 F ’出附熱管冷卻器2之總熱阻Rt。 此外’右於步驟7巾以溫度感測器26 放—P(散熱片6)表面溫度T，2取代T2 所檢出之附熱管冷卻器2 ’則可算出附熱管冷卻器 17 200937595 2之工作熱阻Rw。 [評價傳熱機器單體之效能] 上文係説明使用設有加熱裝 細哭9 里州教罝21來量測附熱管冷 步驟。熱阻係評價傳熱機器裝於特定埶界時之傳 熱效能之有效指標。 U時之傳 然，根據發明人之實驗，2x7mm大小之平面加熱器（執源〇 與附熱管冷卻器2組合時之工作熱阻Rw係為〇 35(k/w)，而 〇 Μ"101大小之平面加熱器（熱源2)與附熱管冷卻器2組合時之 工作熱阻Rw係為請（K/w)。因此，由於熱阻因熱源大小及形 ^而變化，故存在難以用作傳熱機器單體傳熱效能評價指標之問 因此’發明人考量用量測裝置21來估計傳熱機器之有效導熱 率，同時时效導熱㈣則賈傳熱機料體之傳熱效能。以下說 月於.、'、源上°又置傳熱機器，根據熱源之發熱量與傳熱機器之傳 熱量達到平衡從而使熱源溫度制穩定時之熱源溫度，估計傳熱 © 機器之有效導熱率之方法；以及使时效導熱率作為附熱管冷卻 器2單體之傳熱效能之評價指標之優越性。 [決定熱傳導方程式之邊界條件] 將導熱率已知之物體置於熱源上，其上設置傳熱機器，為計算 熱源之發熱量與傳熱機器之傳熱量平衡時之溫度（穩定溫度），用如 下步驟決定熱傳導方程式之邊界條件： (1)將導熱率已知之放熱體（例如銅板）置於熱源上，在該熱源之 溫度達到穩定時，量測該放熱體之溫度分佈（例如，使用紅外線 18 200937595 溫度記錄儀）； ⑺針對該放熱體和該熱源建立三元熱傳導方程式，並用有限體 積法求解； ⑺比較⑴之量測值和⑺之計算值，決定使二者一致之三元執 傳導方程式之邊界條件（觀熱__齡1之高溫脂之厚度1 放熱體上面之傳熱係數）〇 又 Λ [決疋導熱率與熱源穩定溫度之關係式] 在使用上述方法決定邊界條件之同時，將該放熱體之導敎率進 行種種改變，求解該三元埶傳導 Μ ^ 程式，並计算該熱源相應於各 該放熱體導熱率之穩定溫度。 發明人用上述方法決定了關於該熱源】及該熱源2之熱傳導方 程式之邊界條件，並計翼了道勒、左& ώ t U异了導熱率與穩定溫度 熱體之導熱率為_、 絲該放 進行座標圖縣，得到第9圖源2之敎溫度為縱轴 ❿ 或該熱源2之穩定溫度為Y、該放熱體之導 熱羊為X，將二者之關係用τ式近似表達： Y==Y〇+P-exp(-x/Q)(式 7) X與穩定溫度Y之相闕係數成為最大，選擇式7之 承數、，-σ果彳于到以下各值。 即，對於該熱源】： Y〇=345.8 > P=32.51，Q^80.4 對於該熱源2: (式8) Υ〇=347·2 ' Ρ-26.18 > Q=580.6 (式9) 19 200937595 第9圖所示曲線係在式7中代入式$或式9所示值後所 得之曲線。 [估計傳熱機器之有效導熱率] 從式7得到下式。 X=Q.Ln{P/(Y—Yg)}(式 1〇) 將附熱管冷卻器2置於上述熱源1及上述熱源2上’在求該熱 ' 〜"、源2之穩定溫度時得到349.4(K)與350.6(K)。將該等(Step 5) The heat Wp generated by heating the film 7 per unit time is supplied according to the power control device 23; 6) According to w B and Wp, the heat pipe cooler 2 is supplied (heat release) per unit time. The heat WF: / step = 7) according to the external ambient temperature L detected by the temperature sensor 25 and the total thermal resistance Rt of the heat pipe cooler 2 attached to the D, D, F'. In addition, the work of the heat pipe cooler 17 200937595 2 can be calculated by the temperature sensor 26 - P (heat sink 6) surface temperature T, 2 instead of the T2 detected heat pipe cooler 2 '. Thermal resistance Rw. [Evaluation of the efficiency of the heat transfer machine unit] The above description shows the use of a heating device to measure the heat pipe cooling step. The thermal resistance is an effective indicator for evaluating the heat transfer efficiency of a heat transfer machine at a specific boundary. According to the inventor's experiment, the working heat resistance Rw of the 2x7mm planar heater (the combination of the source 〇 and the attached heat pipe cooler 2 is 〇35(k/w), and 〇Μ"101 The working thermal resistance Rw of the planar heater (heat source 2) combined with the heat pipe cooler 2 is (K/w). Therefore, since the thermal resistance varies depending on the size and shape of the heat source, it is difficult to use. Therefore, the inventor considers the measuring device 21 to estimate the effective thermal conductivity of the heat transfer machine, and at the same time, the aging heat conduction (4) is the heat transfer efficiency of the heat transfer machine body. The heat transfer machine is placed on the ., ', and source. The heat source temperature is balanced according to the heat generated by the heat source and the heat transfer capacity of the heat transfer machine, and the heat source temperature is estimated. The method and the aging heat conductivity are used as the evaluation index of the heat transfer efficiency of the heat pipe cooler 2. [Determining the boundary condition of the heat conduction equation] The object with known heat conductivity is placed on the heat source, and heat transfer is arranged thereon. Machine for calculating heat source The temperature at which the heat transfer is balanced with the heat transfer amount of the heat transfer machine (stable temperature), the boundary conditions of the heat transfer equation are determined by the following steps: (1) A heat radiator (for example, a copper plate) having a known thermal conductivity is placed on the heat source at the heat source. When the temperature reaches a stable temperature, measure the temperature distribution of the exothermic body (for example, using an infrared ray 18 200937595 temperature recorder); (7) establish a ternary heat conduction equation for the exothermic body and the heat source, and solve it by a finite volume method; (7) compare (1) The measured value and the calculated value of (7) determine the boundary condition of the ternary conduction equation that makes the two consistent. (The thickness of the high temperature grease of the heat __ age 1 is 1 the heat transfer coefficient of the heat radiator) 〇 Λ [疋The relationship between the thermal conductivity and the heat source stability temperature is determined by using the above method to determine the boundary conditions, and the enthalpy of the exotherm is varied to solve the ternary conduction Μ ^ program, and the heat source is calculated corresponding to each The stable temperature of the thermal conductivity of the exothermic body. The inventors used the above method to determine the boundary conditions of the heat transfer equation for the heat source and the heat source 2, and Wings Doller, Left & ώ t U different thermal conductivity and stable temperature thermal conductivity of the thermal body _, the wire is placed in the coordinate map county, the source of Figure 9 after the source 2 temperature is the vertical axis 或 or the heat source The stable temperature of 2 is Y, the thermal conductivity of the exotherm is X, and the relationship between the two is approximated by τ: Y==Y〇+P-exp(-x/Q) (Equation 7) X and stable temperature The phase coefficient of Y becomes the largest, and the number of the formula 7 is selected, and the -σ is in the following values. That is, for the heat source: Y〇=345.8 > P=32.51, Q^80.4 For the heat source 2 : (Formula 8) Υ〇=347·2 ' Ρ-26.18 > Q=580.6 (Formula 9) 19 200937595 The curve shown in Figure 9 is the curve obtained by substituting the value shown in Equation 7 or Equation 9 in Equation 7. . [Estimating Effective Heat Conductivity of Heat Transfer Machine] The following formula is obtained from Equation 7. X=Q.Ln{P/(Y—Yg)} (Formula 1〇) The heat pipe cooler 2 is placed on the heat source 1 and the heat source 2 above, and the stable temperature of the heat is obtained. When obtained 349.4 (K) and 350.6 (K). These

值連同式8與式9代人式1G，以求出附熱管冷卻器2之有效導熱 率X，結果得到如下之值。 即，對於該熱源1 : X=1270(W.m'K-1)(式 u) 對於該熱源2 : x=U77(w.m'K-丨）（式 12) 不笞係用該熱源1還是用該熱源2量測附熱管冷卻器2 之有效導熱率，其結果幾無差別。由此可知，有效導熱率X係附 熱^冷部器2所固有之傳熱效能指標，不受熱源大小或尺寸之影 口此於加熱裝置1上放置導熱率已知之放熱體，量測加熱裝 置1達到穩定溫度時該放熱體之溫度分佈，即可蚊加熱裝置i ^疋皿度#置於加熱裝置1上之物體之導熱率之義式。另外， 若能對於加熱裝署；& 6 i ^ '、疋s亥關係式’則僅藉由量測加熱裝置1之 穩疋/皿度冑可估4上述物體之有效導熱率。 文係說明用於測定附熱管冷卻器傳熱特性之本發明實例，但 200937595 本發明之適用範圍並不以此為限。本發明可廣泛適用於測定各種 傳熱機器之傳熱特性。 【産業上之利用可能性】 本發明之裝置及方法可用於測定各種傳熱機器之傳熱特性。 【圖式簡單說明】 第1圖係為表示本發明加熱裝置之概念結構之側面圖； 第2圖係為該加熱裝置之加熱基板之外形圖，其中（a)係為其表 ❹ 面之平面圖、（b)係為設有加熱薄膜之部位之放大圖、（c)係為局部 剖面圖； 第3圖係為表示該加熱裝置之加熱基板底面之平面圖，其中（a) 係為總體圖、（b)係為感測薄膜之放大圖； 第4圖係為表示該加熱裝置之安裝基板表面之平面圖，其中（a) 係為單體圖、（b)表示搭載有加熱基板之狀態； 第5圖係為例示用加熱裝置測定附熱管冷卻器總熱阻之原理之 示意圖； Φ 第6圖係為加熱基板底面之等溫線圖之一實例； 第7圖係為表示本發明量測裝置之概念結構之結構圖； 第8圖係為表示在該檢査裝置上執行之程式之實例之流程圖； 以及 第9圖係為表示放熱體之導熱率與熱源之穩定溫度之關係圖。 【主要元件符號說明】 1 :加熱裝置 2:附熱管冷卻器 3:加熱基板 4:安裝基板 21 200937595 5 :熱管 7 :加熱薄膜 9 :感測薄膜 11 :感測用配線薄膜 13 :通孔 15 :電極墊 17 :電極墊 21 :量測裝置 23 :電力控制裝置 25 :溫度感測器 6 :散熱片 8:供電端子 10 :供電用配線薄膜 12 :加熱面 14 :感測端子 16 :連接墊 18 :連接墊 22 :控制裝置 24 :感測控制裝置 26 :溫度感測器 22The values together with Equations 8 and 9 are used to determine the effective thermal conductivity X of the heat pipe cooler 2, and as a result, the following values are obtained. That is, for the heat source 1: X=1270 (W.m'K-1) (formula u) For the heat source 2: x=U77(w.m'K-丨) (Formula 12) This heat source is not used 1 The heat source 2 is also used to measure the effective thermal conductivity of the attached heat pipe cooler 2, and the results are almost indistinguishable. It can be seen that the effective heat conductivity X is the heat transfer performance index inherent to the heat exchanger 2, and is not affected by the size or size of the heat source. Therefore, the heat radiator having a known heat conductivity is placed on the heating device 1, and the heating is measured. The temperature distribution of the exothermic body when the device 1 reaches a stable temperature, that is, the thermal conductivity of the object placed on the heating device 1 by the mosquito heating device. In addition, the effective thermal conductivity of the above object can be estimated only by measuring the stability/diffness of the heating device 1 for the heating device; & 6 i ^ ', 疋shai relationship. The present invention is an example of the invention for determining the heat transfer characteristics of a heat pipe cooler, but the scope of application of the invention is not limited thereto. The invention is broadly applicable to the determination of the heat transfer characteristics of various heat transfer machines. [Industrial Applicability] The apparatus and method of the present invention can be used to determine the heat transfer characteristics of various heat transfer machines. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view showing the conceptual structure of the heating device of the present invention; Fig. 2 is a plan view showing the heating substrate of the heating device, wherein (a) is a plan view of the surface of the heating device; (b) is an enlarged view of a portion where the film is heated, (c) is a partial cross-sectional view; and FIG. 3 is a plan view showing a bottom surface of the heating substrate of the heating device, wherein (a) is a general view, (b) is an enlarged view of the sensing film; FIG. 4 is a plan view showing the surface of the mounting substrate of the heating device, wherein (a) is a single figure and (b) is a state in which a heating substrate is mounted; 5 is a schematic diagram illustrating the principle of measuring the total thermal resistance of the heat pipe cooler by using a heating device; Φ FIG. 6 is an example of an isotherm diagram for heating the bottom surface of the substrate; FIG. 7 is a diagram showing the measuring device of the present invention. A structural diagram of the conceptual structure; Fig. 8 is a flow chart showing an example of a program executed on the inspection apparatus; and Fig. 9 is a diagram showing a relationship between the thermal conductivity of the heat radiator and the stable temperature of the heat source. [Main component symbol description] 1 : Heating device 2: Heat pipe cooler 3: Heating substrate 4: Mounting substrate 21 200937595 5: Heat pipe 7: Heating film 9: Sensing film 11: Sensing wiring film 13: Through hole 15 : Electrode pad 17 : Electrode pad 21 : Measuring device 23 : Power control device 25 : Temperature sensor 6 : Heat sink 8 : Power supply terminal 10 : Power supply wiring film 12 : Heating surface 14 : Sense terminal 16 : Connection pad 18: connection pad 22: control device 24: sensing control device 26: temperature sensor 22

Claims (1)

200937595 十、申請專利範圍： 1. 一種加熱裝置，藉由對形成於基板上之加熱薄膜通電而發 熱，其包含： 一基板； 複數個加熱薄膜；以及 複數供電端子，用於對該複數個加熱薄膜分別獨立供電。 2. 如請求項1所述之加熱裝置，其令，該等供電端子形成於該 基板之底面，且該加熱裝置具有使該等供電端子與該等加熱 ® 薄膜電性連接之通孔。 3. 如請求項2所述之加熱裝置，更包含形成於該基板之底面之 複數個感測薄膜。 4. 如請求項3所述之加熱裝置，其中在設置並保持該基板之同 時，更具有一安裝基板，其上形成有將該等加熱薄膜和該等 感測薄膜與一外部機器電性連接之一配線圖案。 5. 如請求項4所述之加熱裝置，其中該配線圖案具有複數條供 g 電線路，與該等供電端子接觸之始端與位於該安裝基板之一 邊緣部且與該外部機器連接之一終端連通，且該複數條供電 線路之長度全部相等。 6. 一種測定裝置，包含如請求項3所述之加熱裝置、以及一控 制裝置，該控制裝置具有： 一電力控制手段，用於供給該等加熱薄膜預定電力； 一感測控制手段，用於量測該等感測薄膜和該等加熱薄 膜之溫度；以及 一運算手段，用於根據該感測控制手段所量測之該等感 23 200937595 測薄膜和該等加熱薄膜之溫度，算出從該基板之底面流出之 一流出熱量。 7. 如請求項6所述之測定裝置，其中該運算手段係根據該感測 控制手段所量測之該等感測薄膜之溫度，而算出該基板之底 面之一溫度分佈。 8. 如請求項6所述之測定裝置，其中該運算手段係根據該電力 控制手段供給該等加熱薄膜之電力，而算出由該等加熱薄膜 產生之一發熱量。 9. 如請求項8所述之測定裝置，其中該運算手段係從由該等加 熱薄膜產生之發熱量中，減去從該基板之底面流出之流出熱 量，算出從該等加熱薄膜之上面所放出之一放出熱量。 10. 如請求項9所述之測定裝置，更包含測定該測定裝置之周圍 環境溫度之一環境溫度測定手段，其中該運算手段係根據該 環境溫度測定手段所檢出之溫度、該感測控制手段所量測之 該等加熱薄膜之溫度、以及從該等加熱薄膜之上面所放出之 φ 放出熱量，算出設置於該等加熱薄膜上之一測試體之一熱阻。 11. 如請求項9所述之測定裝置，更包含一放熱部溫度測定手段， 用於測定設置於該等加熱薄膜上之測試體之一放熱部之一表 面溫度，其中該運算手段係根據該放熱部溫度測定手段所檢 出之溫度、該感測控制手段所量測之該等加熱薄膜之溫度及 從該等加熱薄膜上面放出之放出熱量，算出該測試體之一熱 阻。 12. 如請求項10或請求項11所述之測定裝置，更包含一溫度監 24 200937595 測手段’用於監測該感測控制手段所量測之該等加熱薄膜之 溫度之時間變化’其中該運算手段在該等加熱薄膜之溫度無 時間變化時，算出該測試體之熱阻。 13. —種導熱率估計方法’包括下列步驟： 一預備量測步驟，將一導熱率已知之放熱體，設置於一 熱源上，在該熱源之一發熱量與一放熱量達到均衡，而該熱 源之-溫度達到-定之穩定狀態τ，量測該放熱體之一溫度 分佈； φ 一計算步驟，求解關於該放熱體和該熱源之一熱傳導方 程式，汁算在該熱源之發熱量和放熱量達到均衡且該熱源之 /JBL度達到一定之穩定狀態下該放熱體之一溫度分佈； 一邊界條件決定步驟，比較該預備量測步驟所得到之溫 度分佈和該計算步驟所得到之溫度分佈，決定使二者達到一 致之該熱傳導方程式之一邊界條件； 一穩定溫度估計步驟，代入該放熱體之導熱率，求解利 ^ 用由該邊界條件決定步驟所決定之邊界條件之該熱傳導方程 式，估計該熱源之發熱量和放熱量達到均衡且該熱源之溫度 達到一定之穩定狀態下之該熱源之溫度； 一近似式決定步驟，根據該穩定溫度估計步驟所得到之 該放熱體之導熱率與該熱源溫度之關係，決定表示二者關係 之近似式； 一測試體量測步驟，將一測試體設置於該熱源上，量測 該熱源之發熱量與放熱量達到均衡且該熱源之溫度達到一定 25 200937595 時該熱源之溫度；以及 一導熱率估計步驟，根據該測試體量測步驟所得到之該 熱源之溫度和該近似式決定步驟所得到之近似式，求出該測 試體之導熱率。 14.如請求項13所述之導熱率估計方法，其中該熱源係為如請求 項1至請求項5中任一項所述之該加熱裝置。 26200937595 X. Patent Application Range: 1. A heating device for generating heat by energizing a heating film formed on a substrate, comprising: a substrate; a plurality of heating films; and a plurality of power supply terminals for heating the plurality of The films are individually powered. 2. The heating device of claim 1, wherein the power supply terminals are formed on a bottom surface of the substrate, and the heating device has a through hole for electrically connecting the power supply terminals to the heating film. 3. The heating device of claim 2, further comprising a plurality of sensing films formed on a bottom surface of the substrate. 4. The heating device according to claim 3, wherein, while the substrate is disposed and held, there is further provided a mounting substrate on which the heating film and the sensing film are electrically connected to an external device. One of the wiring patterns. 5. The heating device of claim 4, wherein the wiring pattern has a plurality of wires for the g-electric circuit, a start end in contact with the power supply terminals, and a terminal at an edge portion of the mounting substrate and connected to the external device Connected, and the lengths of the plurality of power supply lines are all equal. A measuring device comprising the heating device according to claim 3, and a control device, the control device having: a power control means for supplying the heating film with predetermined power; and a sensing control means for Measuring the temperature of the sensing film and the heating film; and calculating means for calculating the temperature of the film and the heating film measured according to the sensing control means One of the bottom surfaces of the substrate flows out of heat. 7. The measuring device according to claim 6, wherein the calculating means calculates a temperature distribution of a bottom surface of the substrate based on the temperature of the sensing film measured by the sensing control means. 8. The measuring device according to claim 6, wherein the calculating means calculates the amount of heat generated by the heating film based on the electric power supplied to the heating film by the power control means. 9. The measuring device according to claim 8, wherein the calculating means subtracts the heat of outflow from the bottom surface of the substrate from the heat generated by the heating film, and calculates the upper surface of the heating film. Release one to release the heat. 10. The measuring device according to claim 9, further comprising an environmental temperature measuring means for measuring an ambient temperature of the measuring device, wherein the calculating means is based on the temperature detected by the ambient temperature measuring means, the sensing control The temperature of the heated film measured by the means and the heat released from the upper surface of the heating film are used to calculate the thermal resistance of one of the test bodies disposed on the heating film. 11. The measuring device according to claim 9, further comprising a heat releasing portion temperature measuring means for measuring a surface temperature of one of the heat radiating portions of the test body disposed on the heating film, wherein the calculating means is based on The temperature detected by the heat release unit temperature measuring means, the temperature of the heated film measured by the sensing control means, and the heat released from the heated film are used to calculate the thermal resistance of the test piece. 12. The measuring device according to claim 10 or claim 11, further comprising a temperature monitoring device 24 200937595 measuring means for monitoring a time change of the temperature of the heating film measured by the sensing control means. The calculation means calculates the thermal resistance of the test body when there is no time change in the temperature of the heated film. 13. The method for estimating thermal conductivity includes the following steps: a preliminary measuring step of disposing a heat radiating body having a known thermal conductivity on a heat source, wherein a heat generation amount and a heat release amount of the heat source are balanced, and The temperature of the heat source reaches a steady state τ, and the temperature distribution of one of the heat radiators is measured; φ a calculation step for solving the heat conduction equation of the heat radiator and the heat source, and the juice is calculated as the heat generation amount and the heat release amount of the heat source. a temperature distribution of the exotherm at a steady state in which the /JBL degree of the heat source reaches a certain steady state; a boundary condition determining step, comparing the temperature distribution obtained by the preliminary measuring step and the temperature distribution obtained by the calculating step, Determining the boundary condition of the heat conduction equation that is consistent with the two; a stable temperature estimation step, substituting the thermal conductivity of the exotherm, and solving the heat conduction equation using the boundary condition determined by the boundary condition determining step, estimating The heat source and the heat release amount of the heat source are balanced and the heat source reaches a certain steady state of the heat The temperature is determined by an approximation determining step, according to the relationship between the thermal conductivity of the exothermic body obtained by the stable temperature estimating step and the temperature of the heat source, determining an approximate expression indicating a relationship between the two; a test body measuring step, a test The body is disposed on the heat source, and measures the heat source and the heat release amount of the heat source to be equalized and the temperature of the heat source reaches a temperature of a certain 25 200937595; and a thermal conductivity estimating step according to the test body measuring step The temperature of the heat source and the approximation obtained by the approximation determining step determine the thermal conductivity of the test body. The heat conductivity estimating method according to claim 13, wherein the heat source is the heating device according to any one of claims 1 to 5. 26
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