JP5862510B2 - Semiconductor device evaluation system and evaluation method - Google Patents

Description

  The present invention relates to a technique such as measurement and evaluation relating to a semiconductor device (system) including a semiconductor chip and a heat dissipation material (heat transfer heat dissipation material and heat radiation heat dissipation material) applied thereto. The present invention also relates to an evaluation system and an evaluation method for a semiconductor device using the evaluation semiconductor chip.

  Semiconductor integrated circuits such as semiconductor chips (semiconductor packages) mounted on various computers and electronic components have been reduced in power consumption by lowering the power supply voltage. However, since higher integration and higher speed are far more than low power consumption, the amount of heat generated by the chip is increasing. Currently, the operating frequency of the chip has entered a high-speed region exceeding 3GHz. For this reason, the problem of heat dissipation from such a high-speed operation / high heat generation chip has become serious.

  As a countermeasure against the heat dissipation problem, air cooling parts such as a heat sink (heat sink) are attached to the chip. A heat dissipation material is used between the chip and the air-cooled component so as to fill a minute gap on the metal surface. For this, a heat transfer heat dissipation material having a heat transfer characteristic commensurate with the amount of heat generated by the chip is selected.

  Furthermore, recently, the market of semiconductor packages (for example, LEDs) in which application of air-cooled parts such as a heat sink is difficult has been rapidly expanding. With respect to such products, there is an increasing need for thermal radiation heat radiation (radiation heat transfer) technology as a heat radiation method instead of air cooling.

  Thermal radiation heat dissipation (radiation heat transfer) generally refers to the combined state of thermal radiation and convection, and in order to measure true thermal radiation, it is measured in a vacuum state with the elements of convection separated. There is a need. However, in order to measure thermal radiation (true thermal radiation) in a vacuum state (in a vacuum), a large apparatus (such as a vacuum apparatus) and time are required, and the cost is high.

  For this reason, an infrared radiation thermometer device (radiation thermometer) that can easily measure the temperature of the heat radiation surface (surface of the object to be measured) in the atmosphere, not in a vacuum, is often used. However, the conventional radiation thermometer does not have a function to correct the emissivity according to the state of the surface of the measurement object (thermal radiation surface), and the emissivity (emissivity according to the surface condition of the measurement object) in advance. Need to be measured and set. That is, a device having the correction function is required separately, and it takes time and labor for measurement and setting.

  In addition, when a semiconductor chip or the like, which is a measurement object, is inside or behind the device (such as a mounting substrate on which the chip is mounted), it is blocked and cannot be measured with a radiation thermometer (the target surface and It must be measured directly so that it is not blocked by the radiation thermometer).

  Therefore, as a means for measuring and evaluating the temperature (thermal radiation), a method of installing a thermocouple as a temperature sensor around the object (surface) is adopted.

  For example, Non-Patent Document 1 (Hitachi Review Vol. 91, No. 05, p. 456) describes a proposal of a solution using an evaluation element for stress / heat generation analysis, which is a problem in high-density mounting. .

  As a prior art example regarding evaluation of a semiconductor device, there is JP-A-2011-196993 (Patent Document 1). In Patent Document 1, a semiconductor chip in which a metal wiring film as a resistance thermometer, a metal wiring film as a heater, and an electrode for connecting the metal wiring film to a mounting substrate are stacked on the surface of a silicon substrate. The semiconductor chip is mounted on a mounting substrate, a metal wiring film as a resistance temperature sensor is connected to an ammeter and a voltmeter, a metal wiring film as a heater is connected to a power source, and measurement is performed in the semiconductor chip region. An evaluation system that can evaluate temperature, heating, and its temperature profile is described.

JP 2011-196993 A

Hitachi Review Vol. 91, no. 05, p. 456

  In the above-described method of installing a thermocouple as a temperature sensor around an object, the temperature is measured by installing a thermocouple on the back surface of the chip or the like surrounding the object to be measured / evaluated (heating source) or on the surrounding substrate. Was measuring. This is because it is difficult to install a thermocouple directly on the object (heat source). However, such a method has a problem that the accurate temperature of a chip or the like which is a heat source cannot be grasped.

  Further, the above-described method has a problem that accurate measurement / evaluation in the actual usage state (heat generation state) of the object (chip or the like) cannot be performed.

  In view of the above, the main object of the present invention is to easily (low-cost) and accurately (highly) measure the thermal resistance (temperature) of an object (for example, a chip) in a device including a semiconductor device and a heat dissipation material.・ Provide technology that can be evaluated.

  More specifically, it eliminates the need for expensive equipment such as vacuum equipment, makes it possible to measure true heat radiation (heat radiation with reduced convection elements) in the atmosphere, and uses a radiation thermometer or thermocouple. It is to provide a technology that reduces the necessity, facilitates correction of emissivity, and enables high-precision measurement / evaluation through simulation of actual usage (mounting).

  In order to achieve the above object, a representative embodiment of the present invention is a semiconductor device (system) object (a chip region or a heat dissipation material) including a semiconductor chip, a heat dissipation material, or the like using an evaluation semiconductor chip or the like. For example, an evaluation system and an evaluation method for measurement / evaluation of thermal resistance (temperature) and heat radiation characteristics, etc., and having the following configuration.

  (1) A semiconductor device evaluation system according to the present embodiment includes an evaluation semiconductor chip, a heat dissipation material formed on the evaluation semiconductor chip, a mounting substrate on which the evaluation semiconductor chip is mounted, and the evaluation And a heat sink for radiating heat from the semiconductor chip. The evaluation semiconductor chip is fixed at a distance between the mounting substrate and the heat sink. The evaluation semiconductor chip includes a semiconductor substrate, one or more first wirings constituting one or more resistance thermometers on the first surface of the semiconductor substrate, and one or more regions. One or more second wirings constituting a heater comprising: a first electrode electrically connected to the first wiring; and a second electrode electrically connected to the second wiring And are formed. The heat dissipation material is a heat transfer heat dissipation material that is fixed in contact between the second surface of the semiconductor substrate and the surface of the heat dissipation plate. A device including the semiconductor chip for evaluation, the heat dissipation material, the mounting substrate, and the heat dissipation plate is installed inside the thermostatic chamber. A power source is connected to the second electrode, heating is performed for each heater region by the second wiring by power from the power source, an ammeter and a voltmeter are connected to the first electrode, and the current Temperature measurement is performed for each region of the resistance thermometer by the first wiring by a meter and a voltmeter, and based on the heating and temperature measurement, the region of the evaluation semiconductor chip in the convection suppression state by the thermostat Measurement of temperature and evaluation of heat transfer heat dissipation characteristics of the heat transfer heat dissipation material are performed.

  (2) In the semiconductor chip evaluation system of this embodiment, the heat dissipation material is a heat radiation heat dissipation material formed on the second surface of the semiconductor substrate, and the surface of the heat radiation heat dissipation material and the surface of the heat dissipation plate The distance between the two is controlled in a non-contact manner. A power source is connected to the second electrode, heating is performed for each heater region by the second wiring by power from the power source, an ammeter and a voltmeter are connected to the first electrode, and the current Temperature measurement is performed for each region of the resistance thermometer by the first wiring by a meter and a voltmeter, and based on the heating and temperature measurement, the temperature of the evaluation semiconductor chip region is measured, and the heat radiation heat dissipation Evaluation of heat radiation characteristics of the material is performed.

  (3) The semiconductor device evaluation method of this embodiment performs evaluation using the evaluation system of (1) above. In this evaluation method, the second evaluation system uses the power from the power source connected to the second electrode in each of the state where the evaluation system is installed inside the thermostat and the state where the evaluation system is installed outside. A first step in which heating is performed for each heater region by the wiring, and an ammeter and a voltmeter connected to the first electrode perform temperature measurement for each region of the resistance thermometer by the first wiring. Based on the second step to be performed, the heating and the temperature measurement, the temperature measurement of the region of the semiconductor chip for evaluation according to the presence or absence of the convection suppression state by the thermostat, and the heat transfer of the heat transfer heat dissipation material And a third step in which the evaluation of heat dissipation characteristics is performed. The evaluation is performed in a state in which the influence of convection around the evaluation semiconductor chip and the heat dissipation material is suppressed.

  (4) The semiconductor device evaluation method of this embodiment performs evaluation using the evaluation system of (2) above. The evaluation method includes a first configuration in which the opposing surface of the heat radiation heat dissipation material is the heat sink made of Al, a second configuration in which the heat sink is an alumite low heat reflecting plate, and a third configuration that is a heat insulator. In each state of the configuration, a first step in which heating is performed for each region of the heater by the second wiring by power from a power source connected to the second electrode, and the first electrode is connected to the first electrode. A second step in which temperature measurement is performed for each region of the resistance thermometer by the first wiring by the ammeter and voltmeter, and the temperature of the region of the semiconductor chip for evaluation based on the heating and temperature measurement. And a third step in which the thermal radiation heat radiation characteristic of the heat radiation heat radiation material is evaluated, and evaluation is performed according to the presence or absence of heat reflection.

  According to a typical embodiment of the present invention, the thermal resistance (temperature) of an object (for example, a chip) in an apparatus including a semiconductor device and a heat dissipation material can be measured easily (low cost) and accurately (high accuracy).・ Evaluation is possible.

It is a figure which shows the structure of the whole system containing the evaluation system of one embodiment of this invention. It is sectional drawing which shows the structure of the semiconductor chip for evaluation of one embodiment of this invention. It is a top view which shows an example of the wiring pattern of the metal wiring film (1st wiring) of this evaluation semiconductor chip. It is a top view which shows an example of the wiring pattern of the metal wiring film (2nd wiring) of the semiconductor chip for this evaluation. It is a figure which shows an example of the structure of the electrode (1st electrode, 2nd electrode) of the semiconductor chip for this evaluation. (A)-(d) is a transition diagram which shows the process of the manufacturing method of this evaluation semiconductor chip. It is sectional drawing which shows the 1st modification of the semiconductor chip for evaluation. It is sectional drawing which shows the 2nd modification of the semiconductor chip for this evaluation. It is sectional drawing which shows the 3rd modification of the semiconductor chip for evaluation. It is a figure which shows the structural example of the semiconductor chip for evaluation of this Embodiment. It is sectional drawing which shows the evaluation system of one embodiment (1st basic composition). It is sectional drawing which shows the evaluation system of one Embodiment (2nd basic composition). It is sectional drawing which shows the evaluation system of one Embodiment (3rd basic composition). It is sectional drawing which shows the evaluation system of one Embodiment (4th basic composition). It is sectional drawing which shows the structure of the evaluation system of Embodiment 1 of this invention. It is sectional drawing which shows the structure of the evaluation system of Embodiment 2 of this invention. It is sectional drawing which shows the structure of the evaluation system of Embodiment 3 of this invention. It is sectional drawing which shows the structure of the evaluation system of Embodiment 4 of this invention. It is sectional drawing which shows the structure of the evaluation system of Embodiment 5 of this invention. It is sectional drawing which shows the structure of the evaluation system of Embodiment 6 of this invention. It is a figure which shows the outline | summary of the specific example using the evaluation system of this Embodiment. It is a figure which shows the 1st specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 2nd specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 3rd specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 4th specific example 1 of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 4th example 2 of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 5th specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 6th specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 7th specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 8th specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 9th specific example of the evaluation result of a thermal radiation characteristic. It is a figure which shows the 10th specific example of the evaluation result of a thermal radiation characteristic.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted. In FIG. 1, an overview of the entire system of the present embodiment will be described. 2 to 10, a configuration example of an evaluation semiconductor chip that is a component of the evaluation system will be described. 11 to 14, an evaluation system that is a basic configuration including the evaluation semiconductor chip will be described. 15 to 20, an evaluation system according to a characteristic embodiment will be described. 21 to 32, a specific example of measurement / evaluation using this evaluation system (verification of effects by this evaluation system) will be described.

[Whole system]
FIG. 1 shows the whole (outline) of a system 300 including the evaluation system 10 of this embodiment. An evaluation system 10 according to the present embodiment includes a target device (such as measurement / evaluation) including an evaluation semiconductor chip 1 (abbreviated as “chip” as appropriate) and a heat dissipation material (A or B) applied thereto ( Target system). The evaluation semiconductor chip 1 is mainly composed of a semiconductor substrate (100), and a first wiring (H1), a second wiring (H2), and the like are formed on one first surface (M1) side, The heat dissipation material (A or B) is formed on the second surface (M2) side. The heat dissipation material (A / B) is (A) a heat transfer heat dissipation material 51 or (B) a heat radiation heat dissipation material 52. Since the evaluation system 10 has various forms to be described later, a system 300 including these is appropriately configured.

  In a predetermined formation part (1000) of the surface (M1) of the semiconductor substrate (100) of the chip 1, a first wiring (H1) that constitutes a resistance thermometer comprising a plurality of regions (R1) and a plurality of regions The second wiring (H2) constituting the heater composed of (R2), the first electrode (D1) connected to the first wiring (H1), and the second wiring (H2) connected to the second wiring (H2). 2 electrodes (D2) are formed (FIGS. 2, 10, etc.).

  An ammeter / voltmeter 21 is connected to the first electrode D1. Each region (R1) of the first wiring (H1) can be selectively measured from the ammeter / voltmeter 21 (or 31 for controlling it).

  A power source (external power source) 22 is connected to the second electrode D2. Each region (R2) of the second wiring (H2) can be selectively heated from the power source 22 (or 32 for controlling it).

  The computer 30 is a configuration example of an evaluation processing system (an information processing system that performs evaluation processing for the evaluation system 10) operated by a user (evaluator or the like). The computer (evaluation processing system) 30 can be realized by a general PC or its software program processing or circuit. The computer 30 includes an arithmetic unit 40 by software program processing using known elements such as a processor and a memory, a GUI unit 60 that performs processing for providing a graphical user interface (screen, etc.) to the user, and other storage (not shown). Part, a communication interface, an input device, an output device, and known elements such as a bus.

  The calculation unit 40 includes, as each processing unit, a thermal resistance / temperature measurement processing unit 31, a heat processing unit 32, a heat radiation material A (heat transfer heat radiation material 51) -a heat radiation characteristic evaluation processing unit 41, and a heat radiation material B (heat. Radiation heat radiation material 52) -heat radiation characteristic evaluation processing unit 42. The calculation unit 40 displays information to the user on the screen of the GUI unit 60 during the measurement / evaluation process (simulation, test, etc.) of the evaluation system 10, and controls the processes 31, 32, 41, 42, etc. The data information corresponding to each process is input / output / stored.

  The thermal resistance / temperature measurement processing unit 31 uses the measurement result (current value, voltage value) of the ammeter / voltmeter 21 to determine the electrical resistance related to the region R1 (the plurality of regions) of the first wiring (H1). Is measured, the temperature is calculated from the electrical resistance and a predetermined function (coefficient), and the thermal resistance is calculated. The thermal resistance is the amount of temperature rise [° C./W] per unit of heat generation. 21 data may be input to 31 by a user's operation, 21 and 31 may be connected and communicated, and 21 data may be automatically acquired by 31. (Selective measurement) may be controlled.

  The heat treatment unit 32 grasps or controls the heating state of the power supply 22 to the region R2 (the plurality of regions) of the second wiring (H2). In addition, 22 data may be input to 32 by a user's operation, 22 and 32 may be connected and communicated, 22 data may be automatically acquired by 32, or 32 to 22 heating (area | region) (Selective heating) may be controlled.

  The heat dissipation material A (51) -heat dissipation characteristic evaluation processing unit 41 performs heat transfer characteristic evaluation processing of the heat dissipation material A (51), adhesion change detection processing (between the chip and the heat dissipation plate, and the like) ( Later).

  The heat radiation material B (52) -heat radiation characteristic evaluation processing unit 42 performs a heat radiation characteristic evaluation process of the heat radiation material B (52), an internal crystal orientation measurement process, and the like (described later).

  The GUI unit 60 configures a screen for displaying data information corresponding to each process and displays it on the display based on the control and processing of the calculation unit 40 in accordance with a user operation. The user can instruct measurement / evaluation processing by operating the screen, and can confirm the result of the measurement / evaluation processing. Note that the system 300 may additionally provide known elements such as a radiation thermometer and a thermocouple as necessary (embodiment), and the computer 30 may process the information.

[Evaluation method]
The evaluation method of the present embodiment is performed based on a user operation using the evaluation system 10 and the system 300. For example, measurement / evaluation processing according to each specific example (FIG. 21) to be described later is performed. For example, the evaluation system 10 is second by the electric power from the power source 22 in each of a state where the evaluation system 10 is installed inside the thermostatic chamber 150 and a state where it is installed outside as shown in FIG. 15 (Embodiment 1). First step in which heating is performed for each heater region (R2) by the wiring (H2), and for each resistance temperature measuring region (R1) by the first wiring (H1) by the ammeter / voltmeter 21 Based on the second step in which temperature measurement is performed, the heating and the temperature measurement, the measurement of the temperature of the region of the semiconductor chip 1 for evaluation according to the presence or absence of the convection suppression state by the thermostatic bath 150, and the heat transfer heat dissipation material 51 And a third step in which the heat transfer heat radiation characteristics are evaluated. That is, the evaluation is performed in a state where the influence of convection around the chip 1 and the heat transfer heat radiation material 51 is suppressed.

[Configuration of Semiconductor Chip for Evaluation (1)]
The configuration of the evaluation semiconductor chip 1 according to the embodiment will be described with reference to FIGS. FIG. 2 shows a cross-sectional structure of the evaluation semiconductor chip 1. This chip 1 is a layer (1000) in which various wirings (H1, H2), electrodes (D1, D2) and the like are formed on one surface (first surface: M1) side of a silicon substrate (semiconductor substrate) 100. Have The main layer (1000) is configured by sequentially laminating metal wiring films 101 and 102, electrodes 103 (103a and 103b), and insulating layers 104 (104a, 104b and 104c) as shown in the figure.

  The metal wiring film 101 (first wiring H1) has a configuration in which a metal wiring pattern that can be used as a resistance temperature detector is formed (example: FIG. 3).

  The metal wiring film 102 (second wiring H2) has a configuration in which a metal wiring pattern that can be used as a heater is formed (example: FIG. 4).

  The electrodes 103 (103a, 103b) are external connection electrodes that are electrically connected to the metal wiring films 101 (H1), 102 (H2) (can be externally connected as in the system 300 of FIG. 1). . The electrode 103 includes a first electrode 103a (D1) and a metal wiring film 102 (H2) for electrically connecting the metal wiring film 101 (H1) to a mounting board (FIG. 11, 201) described later. (201) includes a second electrode 103b (D2) for electrical connection (example: FIG. 5).

  The insulating layer 104 (104a, 104b, 104c) is made of a polyimide film. A polyimide film (104 a) is provided between the metal wiring films 101 and 102, and a polyimide film (104 b) is provided between the metal wiring film 102 and the electrodes 103. A polyimide film (104c) is formed on the electrode 103 as a protective layer.

  Openings g11, g12, g21, and g22 are provided on the surface (M1 side) of the chip 1. Openings g21 and g22 are provided in the insulating layer 104c. g21 is an opening for connecting an electrode 103a (D1) connected to a wiring substrate (FIGS. 11 and 200), which will be described later, or another semiconductor chip and the metal wiring film 101 (H1). g22 is an opening for connecting the wiring substrate (200) and the electrode 103b (D2) connected to the metal wiring film 102 (H2). In the insulating layers 104a and 104b, an opening g11 for connecting the metal wiring film 101 and the electrode 103a is formed. In the insulating layer 104b, an opening g12 for connecting the metal wiring film 102 and the electrode 103b is further formed.

  Since the opening g11 is provided in the same place of the insulating layer 104 (104a, 104b, 104c), the metal wiring film 101 can ensure electrical connection from either of the openings g11, g21. . Similarly, in the metal wiring film 102, electrical connection can be ensured from either of the openings g12 and g22. With the above configuration, the Ball Grid Array mounting structure can be adopted using the openings g21 and g22, and the Wire-Bonding mounting structure can be adopted using the openings g11 and g12. Furthermore, these openings can also be used as terminals for continuity inspection.

  By adopting a configuration (evaluation system 10) in which the semiconductor chip for evaluation 1 as described above is mounted on a mounting board (FIGS. 11 and 201) described later, various temperature processes and the like can be measured and evaluated.

[Configuration of Evaluation Semiconductor Chip (2)]
FIG. 3 shows an example of the wiring pattern of the metal wiring film 101 (H1) of the chip 1 of FIG. In the illustrated pattern, the metal wiring film 101 is an independent platinum (Pt) wiring meandering in a square shape, and is formed in a region (R1) divided in a 3 × 3 matrix. The number of areas (R1) to be fractionated may be any number, and the arrangement method may be such that the areas (R1) may be adjacent as shown in FIG. 3 or may be separated (described later, FIG. 10). .

In the illustrated pattern, each platinum wiring has a total of four terminals N1, two at each end of the wiring, and the terminal N1 is connected to the electrode 103 (103a). Thus, the electrical resistance of each wiring (H1) can be measured by a so-called four-terminal method. That is, the temperature (thermal resistance) in each region (R1) of platinum wiring from platinum (Pt) resistance temperature coefficient (3.9 × 10 ⁻³ / K, edited by the Metallurgy Society of Japan, Metal Data Book, Rev. 3 p.212) Can be measured.

  In this example, a configuration in which independent platinum wirings are provided in each of the plurality of regions (R1) is illustrated, but the metal wiring film 101 in these regions may be configured by one continuous wiring or may be continuous. The wiring may be branched from the middle to provide the terminal N1.

  In addition, as a metal material used for the metal wiring film 101, platinum (Pt) is particularly used because of excellent linearity of temperature and electric resistance, excellent corrosion resistance and migration resistance, and little change in film quality. It is desirable. When using other metal materials such as nickel (Ni), copper (Cu), etc., it is necessary to measure the correlation between temperature and electric resistance before use and prepare a calibration curve in advance. Chip manufacturing costs can be reduced. Pt is used for repeated use and Ni or copper is used for not repeatedly used, depending on the purpose and purpose.

[Configuration of Evaluation Semiconductor Chip (3)]
FIG. 4 shows an example of a wiring pattern of the metal wiring film 102 (H2) of the chip 1 in FIG. In the illustrated pattern, the metal wiring film 102 is a series of wiring patterns in which Ni wiring or copper wiring meanders in four regions (R2) divided on a 2 × 2 matrix. The Ni wiring or the copper wiring has three terminals N2 at both ends and in the middle, and is connected to the electrode 103 (103b). When the heating area is fractionated, the number of the areas (R2) may be any number, and the arrangement method may be such that the areas (R2) may be adjacent to each other as illustrated in FIG. It is also possible (described later, FIG. 10). It also has an electromagnetic wave shield (401) to the wiring.

  The heating region (R2) of the metal wiring film 102 (H2) of the evaluation semiconductor chip 1 is arranged in such an arrangement as to simulate each functional region in the semiconductor chip used in the semiconductor device to be evaluated (mounted), A terminal (intermediate terminal) N2 for selecting and heating only each region (R2) is provided. With such a configuration, it is possible to select the heating area (R2) of the Ni wiring or the copper wiring, and the heat generation area of the semiconductor chip can be simulated.

  In the pattern illustrated in the present example, the terminal N2 is provided in the middle. Of course, the terminal N2 may be provided only at both ends for simple evaluation, or the metal wiring film 101 (H1) illustrated in FIG. It is also possible to provide an independent wiring in the same pattern as that in FIG.

  The metal material used for the metal wiring film 102 is not limited to Ni or copper, and has a conductor resistance that can simulate the heat generation behavior of a semiconductor chip used in a semiconductor device to be evaluated, and has a fine pattern at low cost. Any metal can be used as long as it can be processed and formed and has high-temperature durability. Specifically, NiCr alloy, NiCrAl alloy, Cu alloy, CuMn, CuNi, FeCr alloy, tungsten, and the like.

[Configuration of Evaluation Semiconductor Chip (4)]
FIG. 5 shows an example of the structure of the electrodes 103 (D1, D2) of the chip 1 in FIG. In the pattern illustrated in this example, the electrode 103 has an external connection electrode 501 corresponding to 103a (D1) connected to the terminal N1 of the metal wiring film 101 (H1). The external connection electrode 502 corresponding to 103b (D2) is connected to the terminal N2 of the metal wiring film 102 (H2).

[Method of Manufacturing Semiconductor Chip for Evaluation]
Next, a method for manufacturing the evaluation semiconductor chip 1 of the present embodiment will be described with reference to FIG. 6A to 6D show the process of the manufacturing method of the chip 1. First, in FIG. 6A, a Si oxide film (not shown) is grown on one surface (M1) of the silicon substrate 100. The Si oxide film may be formed by a general method in which Si and oxygen are reacted in a steam atmosphere at about 900 ° C. Then, a metal wiring film 101 having a platinum wiring pattern (for example, FIG. 3) is formed on the Si oxide film by a lift-off method. Specifically, first, a patterned resist is formed on the Si oxide film, and each insulating layer (101a is a PtO film, 101b is a Pt film, and 101c is a TiO film) is sequentially deposited. Then, the resist is removed to complete the wiring pattern shown in FIG. In the present embodiment, since the lift-off method is employed, the wiring thickness is effectively about 1 μm at maximum. By using such a thin-film temperature measuring element (temperature measuring film), the heat capacity of the temperature measuring element (temperature measuring film) itself can be minimized, and as a result, high-speed response can be realized. In order to improve the adhesion between the PtO film (101a) and the Si oxide film and the TiO film (101c) against the polyimide film (104a), the PtO film (101a) is 1/100 of the Pt film (101b). It is provided with a film thickness of about.

  Next, in FIG. 6B, as the insulating layer 104, a polyimide film (104a) having a thickness of about 5 μm is formed, covering both ends of the metal wiring film 101 and opening the terminal N1 portion, and the film (104a). A metal wiring film 102 having a Ni wiring pattern (eg, FIG. 4) is formed thereon. For example, the metal wiring film 102 having the wiring pattern shown in FIG. 4 can be formed by using a semi-additive method in which resist photolithography and Ni electroplating are used in combination using a laminated film of a Cr film and a copper film as a seed film.

  Further, in FIG. 6C, a polyimide film (104b) covering both ends of the metal wiring film 102 and opening the terminal N1 and terminal N2 portions is formed, and the semi-additive method of FIG. 5 is formed on the film (104b). External connection electrodes 103 (103a, 103b) are formed.

  Finally, in FIG. 6D, a polyimide film (104c) as a protective layer having an opening (g11 or the like) for connecting the mounting substrate (201) or the like to be described later and the electrode 103 is formed. The chip 1 is obtained.

  The evaluation semiconductor chip 1 is not limited to the above-described structure and can be variously modified as described below. For example, the resistance temperature detector (H1) and the heater (H2) may be arranged in any positional relationship. The resistance temperature detector (H1), the heater (H2), and the electrodes (D1, D2) may be formed in the same plane (same layer) of the silicon substrate (100) instead of being stacked. Furthermore, by clarifying the relationship between the temperature of the wiring and the electrical resistance, the heater (H2) and the resistance temperature sensor (H1) can be combined with one wiring. That is, if power is supplied from the power source (22) connected to the wiring and the electrical resistance is measured at the same time, the temperature of the wiring itself that generates heat can be measured without providing a separate wiring. As a result, the structure of the semiconductor chip for evaluation 1 is greatly simplified and can be manufactured with a short TAT, and the manufacturing cost can be greatly reduced.

  Further, the evaluation semiconductor chip 1 may be configured to include only the metal wiring film 101 (H1) as a resistance thermometer and not have the function of the heater (H2). For example, when measuring the temperature profile of the process of heating from the outside, the heater (H2) is not necessarily required in the evaluation semiconductor chip 1, and therefore a simpler configuration can be achieved.

[Modification Example of Evaluation Semiconductor Chip (1)]
Hereinafter, modified examples related to the evaluation semiconductor chip 1 will be described.

  FIG. 7 shows the evaluation semiconductor chip 2 of the first modification. The chip 2 includes a resistance thermometer metal wiring film 101 (H1) and a heater metal wiring film 102 (H2), and the resistance temperature measuring body (101) and the heater (102) of the chip 1 of FIG. Is a structure arranged in the opposite position (layer). According to this chip 2, the measurement region (R1) of the resistance temperature detector (101) is closer to the openings g21 and g22 to which the electrode 103 is externally connected than the region (R2) of the heater (102). It has become. Therefore, the temperature at a position closer to the heat source (for example, an underfill material that is a curable resin material) can be measured. However, since the polyimide films (104a, 104b) are sufficiently thin and the heat capacity is sufficiently small, it can be said that there is almost no practical performance difference between 1 and 2, so if an advantageous structure is selected in consideration of the formation yield difference, etc. Good.

[Modification Example of Evaluation Semiconductor Chip (2)]
FIG. 8 shows an evaluation semiconductor chip 3 of a second modification. In the chip 3, the metal wiring film 101 (H 1) of the resistance thermometer and the metal wiring film 102 (H 2) of the heater are formed on the oxide film in the same surface (layer), and (101, 102) A polyimide film (insulating layer 104d) having an opening g31 for connecting the metal wiring film 101 and the electrode 103a and an opening g32 for connecting the metal wiring film 102 and the electrode 103b so as to cover both ends of ) Is provided. Since the two polyimide films (104a, 104b) as the insulating layer described above can be realized by one polyimide film (104d), the number of layers can be reduced compared to the chip 1, and it can be manufactured at a lower cost and with a simple method. is there.

[Modification Example of Evaluation Semiconductor Chip (3)]
FIG. 9 shows an evaluation semiconductor chip 4 of a third modification. In this chip 4, only the metal wiring film 105 that functions as the resistance temperature sensor (H 1) and the heater (H 2) is formed, and the metal wiring film 105 and the electrode 103 (103 a) are formed so as to cover both ends of the metal wiring film 105. , 103b) is provided with a polyimide film (insulating layer 104e) having openings g41, g42. For the metal wiring film 105, for example, Ni wiring or copper wiring as shown in FIG. 3 can be used. This chip 4 is mounted on a wiring board (200), which will be described later, and the current flowing in the Ni wiring or copper wiring is controlled by connecting the power source (22) and the ammeter / voltmeter (21) to the terminals at both ends. In addition, the temperature coefficient of resistance of Ni (6.3 × 10 ⁻³ / K, edited by the Japan Institute of Metals, Metal Data Book 3rd edition, p. 212) or the temperature coefficient of resistance of copper (4.3 × 10 ⁻³ / K, It is possible to measure the temperature in each region (R1) of the Ni wiring or the copper wiring from the metal data book revised edition 3 p.212) edited by the Japan Institute of Metals. According to this chip 4, each of the insulating layer (polyimide film) and the metal wiring film can be omitted one by one as compared with the chip 1, so that the manufacturing process can be simplified and the manufacturing cost can be greatly reduced.

[Configuration example of semiconductor chip for evaluation]
Next, a configuration example of the evaluation semiconductor chip 1 (particularly, the regions R1 and R2) serving as a constituent member of an evaluation system having each configuration described later will be described with reference to FIG. FIG. 10 shows the configuration (upper surface) of three types of semiconductor chips 1 for evaluation, 1a, 1b, and 1c. Metal wiring film 101 (H1) as each resistance temperature measuring layer (platinum wiring) formed on chips 1a, 1b, and 1c, metal wiring film 102 (H2) as a heater layer (Ni wiring), and electrodes A combination with the layer (electrode 103) (D1, D2) is shown.

  The first chip 1a has an outer size of 8 mm × 8 mm, and a metal wiring film (H1) in which the regions (R1) (# 1 to 9) divided into a 3 × 3 matrix are arranged adjacent to each other. 101A and a metal wiring film (H2) 102A in which regions (R2) (# 1 to 4) divided in a 2 × 2 matrix are arranged adjacent to each other, and are wired over almost the entire area of the outer size. The electrodes (D1, D2) 103A are stacked. In addition, the area | region used as the several temperature measurement unit in area | region R1 of each resistance temperature sensor is shown with number (#) 1-9. In addition, regions (#) 1 to 4 that serve as a plurality of heating units in the heater region R2 are indicated.

  The second chip 1b has an outer size of 9 mm × 13 mm, and a metal wiring film (H1) 101B in which the regions (R1) (# 1 to 9) partitioned in a 3 × 3 matrix are arranged apart from each other. In addition, the region (R2) (# 1 to 4) divided into a 2 × 2 matrix is arranged adjacent to the metal wiring film (H2) 102B, and is wired almost over the entire surface of the outer size. The electrodes (D1, D2) 103B are stacked. In this example, the area of the entire region R1 of the metal wiring film 101B is the same as the area of the entire region R1 of the metal wiring film 101A.

  The third chip 1c has an outer size of 15 mm × 25 mm, and has a configuration in which a metal wiring film (H1) 101B, a metal wiring film (H2) 102B, and an electrode 103B are stacked in the same manner as the second chip 1b. is there.

  Based on the above, the evaluation system (91 to 94) of the basic configuration will be described next. Then, the evaluation system (11-16) of characteristic embodiment (1-6) is demonstrated. Each basic configuration becomes a component of the first embodiment or the like, or a comparison factor at the time of evaluation. In addition, although it is set as the chip | tip 1 of FIG. 2 as a semiconductor chip for evaluation mounted in the following evaluation systems (wiring board 200), it is good also as a chip | tip of the above-mentioned various structures not only this.

[First basic configuration]
FIG. 11 shows an evaluation system 91 which is a first basic configuration as one embodiment. In FIG. 11, the present evaluation system 91 has a configuration in which the evaluation semiconductor chip 1 shown in FIG. 2 (upside down) is mounted on the wiring board 200 (mounting board 201) by solder bumps 204. When the connection is made using the solder bump 204, the openings g11 and g12 described above may be closed. The wiring substrate 200 is a printed circuit board, a ceramic substrate, or the like, and includes a substrate wiring 203 (203a, 203b) and wiring groups 250a, 250b connected to the ends thereof. The substrate wiring 203a is connected to the metal wiring film 101 (H1) of the resistance temperature detector. The substrate wiring 203b is connected to the metal wiring film 102 (H2) of the heater. The wiring group 250a connects the resistance thermometer (H1) and the ammeter / voltmeter 21 via the substrate wiring 203a. The wiring group 250b connects the heater (H2) and the external power supply 22 via the substrate wiring 203b.

Thus, as shown in FIG. 1, the heating of each region (R2) of the heater (H2) and the measurement of the thermal resistance of each region (R1) of the resistance thermometer (white silver wiring) (H1) from the outside of the evaluation system 91. (Measurement of electric resistance by the four probe method) is possible. The temperature of each region (R1) of the platinum wiring (H1) is determined from the measurement result of the region (R1) of the resistance thermometer (H1) and the resistance temperature coefficient (3.9 × 10 ⁻³ / K) of platinum. Measurement (calculation) is possible.

[Second basic configuration]
FIG. 12 shows an evaluation system 92 having a second basic configuration. In FIG. 12 and the like, the formation portions (1000) such as the wiring (H1, H2) and the electrodes (D1, D2) of the chip 1 are simply shown as shown. The evaluation system 92 is configured to evaluate heat transfer heat dissipation characteristics in the target device including the heat transfer heat dissipation material 51 (heat dissipation material A). This evaluation system 92 has a configuration in which the evaluation system 91 of FIG. 11 is mounted in a form that is closer to actuality, and it is possible to acquire thermal information of the evaluation semiconductor chip 1 and its periphery (including 51).

  The evaluation system 92 includes an evaluation system 91 shown in FIG. 11 (upside down) (its mounting substrate 201) and a heat sink 71 made of aluminum (Al) material or the like. In this configuration, the heat transfer heat radiation material 51 is sandwiched between them and fixed by a heat insulating screw 241.

  A heat transfer heat dissipation material 51 is filled between the lower second surface M <b> 2 of the chip 1 and the upper surface of the heat dissipation plate 71. At least a part of the substrate wiring 203 on the wiring substrate 200 is electrically connected to an external circuit (FIG. 1) as a harness 243 via the connector 242. The evaluation system 92 has a structure in which a temperature control device 72 is arranged under the heat radiating plate 71. Thereby, the temperature of the heat sink 71 can be controlled.

  In the configuration of the evaluation system 92, the temperature change in the region R1 of the resistance thermometer (H1) of the chip 1 can be detected and measured in the target portion including the chip 1 and the heat transfer heat dissipation material 51. In addition, by temperature control of the heat radiating plate 71 using the temperature control device 72, the heat transfer heat radiating material (heat transfer heat radiating sheet or the like) corresponding to 51 for the chip corresponding to 1 is mounted (in actual use). The heat dissipation characteristics can be evaluated. In other words, the evaluation system 92 (FIG. 1, computer 30) knows the heat dissipation characteristics (thermal resistance) of the heat transfer heat dissipation material 51 by calculating the temperature difference between the two (chip 1, heat transfer heat dissipation material 51). Can do. Therefore, useful data can be acquired also in the design and development of a heat transfer heat radiation sheet corresponding to 51.

  Note that the temperature measurement and heat dissipation characteristics may be evaluated as a configuration in which the heat dissipation material (51) is not provided in the configuration of FIG. 12, that is, a configuration in which a space region is provided between the chip 1 and the heat dissipation plate 71.

[Third basic configuration]
FIG. 13 shows an evaluation system 93 having a third basic configuration. The configuration of the evaluation system 93 is a configuration in which the heat transfer heat radiating material 51 is not provided in the evaluation system 92 having the second basic configuration. The evaluation system 93 is arranged such that the lower surface (second surface M2) of the chip 1 and the upper surface of the heat sink 71 are in contact with each other. In such a configuration, it is possible to evaluate the temperature measurement and heat dissipation characteristics of the target device without the heat dissipation material.

[Fourth basic configuration]
FIG. 14 shows an evaluation system 94 having a fourth basic configuration. The evaluation system 94 includes a heat radiation heat dissipation material 52 (heat dissipation material B) and a heat insulating material 77. The evaluation system 94 has a configuration in which the heat radiation heat radiation material 52 is formed on the lower surface (M2) of the chip 1 of the evaluation system 91 in FIG. 11 and the opposite surface is changed to the heat insulating material 77 instead of the heat radiation plate 71. is there. The heat insulating material 77 is arranged by controlling the distance k4 (space region 1004) between the heat radiation heat radiating material 52 and the heat insulating material 77.

  Based on the above, a characteristic embodiment will be described below. Embodiment 1 is a configuration example using a heat transfer heat dissipation material 51 as a heat dissipation material, and Embodiments 2 to 6 are configuration examples using a heat radiation heat dissipation material 52 as a heat dissipation material.

<Embodiment 1>
FIG. 15 shows the configuration of the evaluation system 11 of the first embodiment. The evaluation system 11 according to the first embodiment is configured to measure and evaluate heat dissipation characteristics due to heat transfer, convection, and heat reflection (existence / absence) of a target device including the evaluation semiconductor chip 1 and the heat transfer heat dissipation material 51. The evaluation system 11 has a configuration in which the evaluation system 92 in FIG. 12 is arranged in a thermostatic chamber (chamber) 150. The thermostat 150 is an aluminum (Al) thermostat (convection suppressive Al thermostat) having a function of suppressing internal convection. The inner wall of the thermostatic chamber 150 can be easily switched between an Al state (150a) and a black body paint applied thereto (150b) as needed. The Al state (150a) corresponds to a state with heat reflection, and the black body application state (150b) corresponds to a state without heat reflection. That is, in this evaluation system 11, acquisition of thermal information of the chip 1 and its surroundings (including the heat transfer heat dissipation material 51) when the inner wall of the thermostatic chamber 150 is in the Al state (150a) and the black body application state (150b). Is possible. In this evaluation system 11 (system 300 in FIG. 1), the measurement data of the temperature (thermal resistance) of the region R1 of the chip 1 in each state (150a, 150b) is acquired, and the difference data is acquired (calculated). Thus, it is possible to evaluate the heat transfer and heat dissipation characteristics according to the presence or absence of heat reflection when suppressing convection.

  In addition, the evaluation system 11 has a structure in which temperature control devices 151 (Peltier temperature control devices) are arranged on the upper and lower surfaces of the constant temperature bath 150. Thereby, the temperature of the thermostat 150 (inside) is controlled at the same temperature as the heat sink 71 (controllable from the outside). Thereby, it is possible to acquire and evaluate the heat radiation data for the portion other than heat transfer (convection suppression) in the simulation of the actual use state (when mounted) of the heat transfer heat radiation sheet corresponding to the heat transfer heat radiation material 51. The temperature control device 72 in the thermostat 150 may be omitted.

<Embodiment 2>
FIG. 16 shows a configuration of the evaluation system 12 according to the second embodiment. The evaluation system 12 according to the second embodiment is configured to measure and evaluate the heat radiation and heat dissipation characteristics of the target device including the chip 1 and the heat radiation and heat dissipation material 52. The evaluation system 12 is configured with the evaluation system 91 (chip 1 and mounting substrate 201 and the like) of FIG. 11 in a form that is closer to the actual (mounting), and the evaluation semiconductor chip 1 and its surroundings (the heat radiation heat dissipation material 52) (Including) thermal information can be acquired. The evaluation system 12 controls the distance k1 (space region 1001) in a non-contact state with the heat sink 71 made of Al with the heat radiation heat dissipation material 52 formed on the surface (M2) of the chip 1. It is the structure arranged. The distance k1 (spatial region 1001) can be controlled, for example, by adjusting the heat insulating screw 241. In this evaluation system 12, the evaluation of the heat radiation heat dissipation characteristics in a state where the convection generated between the chip 1 (the heat radiation heat radiation material 52) and the heat radiation plate 71 (Al) (1001) is suppressed by the control of the distance k1. Is possible.

<Embodiment 3>
FIG. 17 shows the configuration of the evaluation system 13 of the third embodiment. The evaluation system 13 is configured to measure and evaluate the thermal radiation heat radiation characteristics at the time of convection suppression for the target device including the chip 1 and the heat radiation heat radiation material 52. The evaluation system 13 has a configuration in which a low heat reflection plate 73 is further arranged on the heat dissipation plate 71 of the evaluation system 92 of FIG. In this state, the heat radiation heat dissipating material 52 is formed on the surface (M2) of the chip 1, and the distance k2 (space region 1002) is controlled in a non-contact state with the low heat reflecting plate 73. The low heat reflecting plate 73 is made of alumite, for example, having low heat reflection. In this evaluation system 13, the thermal radiation heat radiation characteristic in the state which suppressed the heat reflection from the low heat reflection board 73 can be evaluated, and the thermal radiation from the thermal radiation heat radiation material 52 formed in the surface (M2) of the chip | tip 1 is reflected. Temperature measurement.

<Embodiment 4>
FIG. 18 shows a configuration of the evaluation system 14 according to the fourth embodiment. The evaluation system 14 is configured to measure and evaluate heat dissipation characteristics due to heat radiation, convection, and heat reflection with respect to a target device including the chip 1 and the heat radiation heat dissipation material 52. This evaluation system 14 has a configuration in which the evaluation system 13 in FIG. 17 is disposed in a thermostatic chamber 150 similar to that described above (FIG. 15). Thermal information of the chip 1 and its surroundings (including the heat radiation heat dissipating material 52) in each state of the inner wall of the thermostatic chamber 150 in the Al state (150a) and the black body application state (150b) can be acquired. , 150b) can be evaluated. The evaluation system 14 is similar to the above in the state where the heat radiation heat radiation material 52 is formed on the surface (M2) of the chip 1 and the distance k2 in a non-contact state between the heat radiation heat radiation material 52 and the low heat reflection plate 73. In this configuration, the (space region 1002) is controlled. Moreover, this evaluation system 14 is the structure which arranged the temperature control apparatus 151 on the upper and lower surfaces of the thermostat 150 similarly to the above, and controls the temperature of the thermostat 150 at the same temperature as the heat sink 71 and the low heat reflection board 73. In this evaluation system 14, the thermal radiation heat radiation characteristic by the presence or absence of the heat reflection at the time of convection suppression can be evaluated. Therefore, it is possible to acquire and evaluate heat dissipation data in a simulation in a state close to the actual use state (during mounting) of the material corresponding to the heat radiation heat dissipation material 52.

<Embodiment 5>
FIG. 19 shows a configuration of the evaluation system 15 of the fifth embodiment. The evaluation system 15 is configured to measure and evaluate heat dissipation characteristics due to heat radiation, convection, and heat reflection with respect to a target device including the chip 1 and the heat radiation heat dissipation material 52. The evaluation system 15 has a structure in which a member (a convection / heat reflection suppressing member 2002 on the board facing surface) including the heat sink 74 is also installed on the wiring board 200 (mounting board 201) side of the evaluation system 14 in FIG. . The heat radiating plate 74 has a structure in which a heat insulating material 75 (convection suppressing member) is attached to the upper surface, and a low heat reflecting plate 76 is attached to the lower surface (side facing the wiring board 200). A configuration in which the heat radiating plate 74 (convection / heat reflection suppressing member 2002) with the heat insulating material 75 and the low heat reflecting plate 76 is arranged in a state in which the convection can be suppressed by controlling the distance k3 (space region 1003) from the wiring board 200. It is. Below the chip 1 and the heat radiation heat dissipation material 52 of the evaluation system 14, members (such as convection and heat reflection on the chip facing surface) by the heat radiation plate 71, the low heat reflection plate 73, and the like via the distance k2 (space region 1002) described above. The suppressing member 2001) is disposed, and a member (convection / heat reflection suppressing member 2002) such as a heat radiating plate 74 is disposed on the upper side of the mounting substrate 201 via the distance k3 (space region 1003). In this evaluation system 15, it is possible to evaluate thermal radiation heat radiation characteristics in a state where the influence of thermal radiation from the wiring board 200 (mounting board 201) side on the temperature of the chip 1 is suppressed. That is, temperature measurement reflecting the heat radiation only from the heat radiation heat dissipating material 52 formed on the surface of the chip 1 can be performed.

<Embodiment 6>
FIG. 20 shows a configuration of the evaluation system 16 according to the sixth embodiment. This evaluation system 16 is configured to enable comparative evaluation of the crystal orientation inside the heat radiation heat dissipating material 52 and the heat conduction due to the material composition. The evaluation system 16 has a configuration in which a thermocouple 80 is disposed on the back surface (upper side) of the wiring board 200 (mounting board 201) with respect to the evaluation system 15 (14). Thereby, it is the structure which measures and evaluates whether the heat conduction is preferentially conducted to the heat radiation heat radiation material 52 side or the heat storage is performed on the chip 1 side by the heat radiation heat radiation material 52. In this evaluation system 16, the heat conduction can be measured by the difference in crystal orientation and composition of the formation layer of the heat radiation heat dissipating material 52 in the chip 1 (M2) (described later).

<Specific examples of evaluation>
Hereinafter, measurement / evaluation (e.g., evaluation of capability) of heat dissipation characteristics and the like for each target with and without heat dissipation material (A / B) using the above-described basic configuration and the evaluation system of each embodiment. A specific example of verification will be described. The present invention is not limited to these specific examples. As a supplement, FIG. 21 shows the correspondence between the above-described configurations and specific examples, an outline, and the like.

<Specific example of heat dissipation characteristics evaluation of heat dissipation material A>
Measurement, evaluation, etc. of heat transfer heat radiation characteristics by each evaluation system (target device) with and without heat transfer heat radiation material 51 (heat radiation material A) using FIG. 12, FIG. 13, and FIGS. A specific example will be described. This is a specific example mainly corresponding to the evaluation system 11 of the first embodiment described above. In addition, by using the evaluation system 92 of the second basic configuration in FIG. 12, an evaluation in the case of including the heat transfer heat radiation material 51 is performed, and by using the evaluation system 93 of the third basic configuration in FIG. 13. Then, evaluation is performed when the heat transfer heat radiation material 51 is not provided. By using the evaluation system 94 having the fourth basic configuration shown in FIG.

  Note that the second chip 1b shown in FIG. 10 was used as the chip 1 mounted on the evaluation system 13. In addition, you may perform the process corresponding to the specific example of a measurement and evaluation at the time of using the following heat-transfer thermal radiation materials 51 by the process part 41 of the computer 30 of FIG.

[First specific example]
In the first specific example, an evaluation result of temperature measurement / evaluation by the evaluation system 93 (without heat dissipation material) of FIG. 13 is shown. In the first specific example, power is applied to the chip 1b to heat the metal wiring film 102 (H2) of the heater, and the metal wiring film 101 (H1) of the resistance thermometer and a radiation thermometer separately prepared. The temperature of the chip 1b was measured. Thereby, the heat dissipation characteristic (temperature measurement capability) of the evaluation system 93 was evaluated. In the first specific example, measurement / evaluation for each region (R1) of the chip 1 is not performed.

  In FIG. 22, the graph of the 1st specific example of the evaluation result by the evaluation system 93 is shown. In FIG. 22, the horizontal axis represents the applied power [W] to the chip 1b, and the vertical axis represents the temperature measurement value [° C.] with respect to the applied power. A square mark (□) is a temperature measurement value by the metal wiring film 101 (H1) of the platinum wiring layer, and a circle mark (◯) is a temperature measurement value measured using a radiation thermometer.

  As can be seen from FIG. 22, there is no substantial difference between the temperature measurement value (□) obtained by the metal wiring film 101 (H1) and the temperature measurement value (◯) obtained by the radiation thermometer. Matched well. From this result, in the first specific example (evaluation system 93), the temperature change due to the heat generation of the metal wiring film 102 (H2) can be accurately measured by the metal wiring film 101 (H1) without using a thermocouple. I found out.

[Second specific example]
Next, in the second specific example, temperature measurement evaluation for each region (R1) of the chip 1 using the evaluation system 93 (without heat dissipation material) of FIG. 13 will be described. Power is applied to the chip 1b to heat the metal wiring film 102 (H2), and all measurement regions # 1 to # 9 in the resistance temperature measuring region R1 of the metal wiring film 101 (H1) of the platinum wiring layer (FIG. 10). The temperature of was measured.

  FIG. 23 shows the evaluation results of the second specific example. The horizontal axis indicates the measurement areas # 1 to # 9 in the area R1. The vertical axis represents the measured value of the temperature [° C.] of each measurement region according to the power applied to the chip 1b. The applied power [W] is 1.3 W for the rhombus (◇), 5.5 W for the square (□), 13.0 W for the triangle (Δ), and 20.0 W for the circle (◯).

  As can be seen from FIG. 23, as the power applied to the chip 1b increased, the temperature in each measurement region also increased. In addition, by the measurement area, the temperature of the measurement area (# 5) at the center of the chip 1b is the highest overall, and the temperature of the measurement areas (# 1, 3, 7, 9) at the end of the chip 1b is relatively low. It was done. This tendency becomes more prominent as the applied power increases. These indicate that heat is likely to be generated at the center of the chip 1b and heat is likely to escape at the end side. From this result, in the second specific example (evaluation system 93), the temperature change due to the heat generation of the metal wiring film 102 (H2) can be accurately measured for each measurement region of the metal wiring film 101 (H1). I understood it. Thus, in the second specific example (evaluation system 93), the heat generation structure of the actual package (when the chip 1 is mounted) can be reproduced (simulated) and an accurate temperature profile of the heat generation behavior (heat dissipation characteristics) can be obtained. It can be obtained for each measurement region.

[Third example]
Next, as a third specific example, temperature measurement evaluation based on the presence or absence of a heat radiating sheet (heat transfer heat radiating material 51) is shown. In the third specific example, the evaluation system 92 of FIG. 12 is used as the evaluation system, and the configuration (92) when the heat transfer heat dissipation material 51 corresponding to the heat dissipation sheet is used and the configuration (92 of 92) when not used. The temperature of all the measurement regions # 1 to # 9 in the region R1 of the resistance thermometer using the metal wiring film 101 (H1) of the platinum wiring layer of the chip 1 was measured. Note that the first chip 1 a was used as the chip 1.

  FIG. 24 shows the result of the third specific example. The temperature measurement value of each measurement area | region # 1-9 according to the presence or absence of a heat radiating sheet (heat-transfer heat radiating material 51) when the power applied to the chip 1a is the same (15 W) is shown. The square (□) indicates the case with the heat dissipation sheet (51), and the circle (◯) indicates the case without the heat dissipation sheet (51).

  As can be seen from FIG. 24, the temperature (□) in the case (92) when the heat dissipation sheet (51) is provided between the chip 1a and the heat dissipation plate 71 is compared with the temperature (◯) in the case where it is not provided. It was found to be low over the entire measurement area. This indicates that the heat generated in the chip 1a is efficiently conducted to the heat radiating plate 71 by using the heat radiating material (51) having high thermal conductivity. It was also found that the temperature distribution between the measurement regions was reduced by the heat dissipation sheet (51). This indicates that the adhesion between the chip 1a and the heat radiating plate 71 is improved, the contact resistance is reduced, and the heat generated in the chip 1a is efficiently dispersed and conducted in the plane. As described above, in the third specific example (evaluation system 92), it is possible to evaluate the heat radiation characteristics and effects of each member (sheet-like heat radiation material and grease-like heat radiation material) such as the heat transfer heat radiation material 51.

[Fourth specific example]
Next, as a fourth specific example, a temperature cycle reliability test using a grease heat dissipation material as the heat transfer heat dissipation material 51 will be described. In the fourth specific example, the evaluation system 92 of FIG. 12 is used as the evaluation system, and the heat transfer heat dissipation material 51 on the lower surface of the chip 1 is used instead of the above-described heat dissipation sheet (first type heat transfer heat dissipation material 51). Further, a configuration using a grease heat dissipation material (heat dissipation grease) (second type heat transfer heat dissipation material 51) having different characteristics is used. In the fourth specific example, the evaluation system 92 measured the temperatures of all measurement regions # 1 to # 9 in the region R1 of the chip 1 under a constant applied power before and after the temperature cycle test as described below. . Thereby, the change of the heat dissipation characteristic of the grease heat dissipation material (51) was detected, and the material life evaluation was performed from there. As the chip 1, a third chip 1c was used. As the grease heat dissipation material, Shin-Etsu Silicone X-23-7783D, thermal conductivity: 5.5 W / m / K was used.

  In the temperature cycle test, after holding at −40 ° C. for 30 minutes, the temperature in the test area (measurement region) is increased to + 130 ° C. in 1 minute and held at that temperature for 30 minutes, and then again −40 ° C. in 1 minute. The cycle in which the temperature was lowered and maintained at the same temperature for 30 minutes was repeated 1000 times.

  The heat-dissipating grease sometimes entraps bubbles when applied, but the amount, size, and location are not constant, and as a result, it is not always easy to detect the correct heat-dissipating characteristics of the heat-dissipating grease itself. In addition, air bubbles mixed in the heat dissipating grease may affect the temperature cycle test.

  FIG. 25 shows an example of an experimental result regarding the repeatability of the temperature cycle test for Sample A and Sample B manufactured from the same heat release grease with the same chip 1c as the evaluation result (No. 1) of the fourth specific example. Indicates the part. The horizontal axis represents the number of temperature cycles, and the vertical axis represents the temperature measurement value of the resistance thermometer in each sample. The circle (◯) is the temperature of sample A, and the square (□) is the temperature of sample B.

  It is often observed that the heat radiation grease protrudes from between the chip 1 and the heat radiation plate 71 during the temperature cycle test. This phenomenon is called “pump-out” and is said to be the main cause of fluctuations in heat conduction characteristics of the heat dissipating grease in the temperature cycle test.

  Also in the results of the temperature cycle test of Samples A and B illustrated in FIG. 25, the heat dissipation performance is first improved by reducing the thickness of the heat-dissipating grease due to the pump-out, and then there is a shortage of grease due to further pump-out. Deterioration phenomenon has been confirmed.

  However, when the change in the heat dissipation characteristics of Sample A and Sample B is analyzed in detail, the temperatures indicated by Sample A and Sample B are different despite the measurement under the same material and the same power application conditions. The change behavior is not necessarily the same. In order to investigate the cause, the temperature measurement distribution in the chip 1 was measured in the samples X and Y (particularly under different conditions of the coating method) manufactured with the same configuration as the samples A and B.

  FIG. 26 shows a part of the measurement result of the temperature measurement distribution in the chip 1 for the samples X and Y. A circle (◯) is the temperature of the sample X, and a square (□) is the temperature of the sample Y. The average temperature of measurement region # 1-9 of sample X was 65.37 ° C., and the average temperature of measurement region # 1-9 of sample Y was 59.38 ° C. The sample X and the sample Y have a difference of 6 ° C. in the in-plane average temperature in the initial stage, and the difference is particularly remarkable in some specific measurement regions.

  Further, when the mixed bubbles in the heat dissipating grease were separately observed, it was confirmed in FIG. 26 that bubbles were included (mixed) in the vicinity of a region where the temperature difference was particularly remarkable. If the thermal grease is subjected to a temperature cycle test with air bubbles mixed in the thermal grease, the air bubbles will be discharged together with the pumping out of the thermal grease under test, but the amount of air bubbles mixed in is inevitable. In other words, the heat dissipation fluctuation shows different behavior for each chip 1.

  Using the fourth specific example (evaluation system 92), by performing a temperature cycle test while measuring the temperature distribution in the chip 1, it is possible to evaluate the influence of the above-mentioned randomly mixed bubbles. it can. That is, by observing the influence of mixed bubbles in a non-destructive manner, it is possible to detect a change in adhesion between the heat dissipation material (51) and the heat dissipation plate 71.

[Fifth Example]
Next, temperature measurement evaluation based on the presence or absence of convection suppression will be described as a fifth specific example. In the fifth specific example, the evaluation system 92 in FIG. 12 and the evaluation system 11 in the first embodiment in FIG. 15 are used as the evaluation system. As shown in FIG. 15, the temperature measurement / evaluation is performed for the case where the heat transfer heat radiating material 51 is used in each of the configuration in which the evaluation system 92 is disposed in the thermostatic chamber 150 and the configuration in which the evaluation system 92 is disposed outside the thermostatic chamber 150. went. As the chip 1 mounted on the evaluation system 92, the first chip 1a was used. The applied power to the chip 1a was the same (18W). The heat sink 71 (heat sink) and the thermostat 150 were controlled at the same temperature.

  FIG. 27 shows the evaluation results of the fifth specific example. Electric power (18 W) is applied to the chip 1a, the heater region R2 is heated by the metal wiring film 102 (H2), and the entire resistance measurement region R1 is measured by the metal wiring film 101 (H1) of the platinum wiring layer. The temperature of # 1-9 was measured. Squares (□) indicate temperatures with convection suppression, and circles (◯) indicate temperatures without convection suppression. The average temperature with convection suppression (□) was 46.04 ° C., and the average temperature without convection suppression (◯) was 29.48 ° C.

  As can be seen from FIG. 27, the temperature of the resistance thermometer (platinum wiring) is about 17 ° C. higher on average in the case of convection suppression (□) than in the case of no convection suppression (◯), and the influence of convection on temperature is greater . As described above, in the fifth specific example (evaluation systems 11 and 92), it is possible to obtain an accurate temperature profile of the heat generation behavior (heat dissipation characteristics) depending on the presence or absence of convection suppression.

[Sixth example]
Next, as a sixth specific example, the influence on temperature due to thermal radiation (the presence or absence) from the back side of the substrate will be described. In the sixth specific example, the evaluation system 92 in FIG. 12 and the evaluation system 11 in the first embodiment in FIG. 15 are used as the evaluation system. The evaluation system 92 is disposed in the thermostat 150, and the inner wall of the thermostat 150 has an Al state (150a) and a black body paint (emissivity 0.94) applied (150b). Temperature measurement and evaluation were carried out when using The applied power to the chip 1a was the same. The heat radiating plate 71 and the thermostatic chamber 150 were set to the same temperature.

  FIG. 28 shows the evaluation results of the sixth specific example. Electric power (18 W) is applied to the chip 1a to heat the heater region R2 by the metal wiring film 102 (H2), and the entire measurement region of the resistance thermometer region R1 by the metal wiring film 101 (H1) of the platinum wiring layer The temperature of # 1-9 was measured. Squares (□) indicate heat reflection (Al state (150a)), and circles (◯) indicate no heat reflection (black body application state (150b)). The average temperature with heat reflection (□) was 46.04 ° C., and the average temperature without heat reflection (◯) was 44.99 ° C.

  As can be seen from FIG. 28, the temperature of the resistance thermometer (platinum wiring) is about 1 ° C higher on average with heat reflection (□) than without heat reflection (◯), and the back side of the substrate (mounting substrate 201 side) The influence on the temperature due to the heat reflection of the heat radiated from is small. As described above, in the sixth specific example (evaluation systems 11 and 92), it is possible to accurately measure a minimal temperature change in the heat generation behavior (heat dissipation characteristics) due to the presence or absence of heat reflection.

  In the evaluation of the heat dissipation characteristics of the heat transfer heat dissipation material 51 described above, heat conduction generally occurs in the order of [heat transfer]> [convection]> [heat radiation] (the influence is large in that order). For this reason, as for the temperature drop due to the heat radiation from the back surface of the substrate as in the sixth specific example, the heat radiation characteristic of the heat transfer heat radiation material 51 is evaluated generally ignoring. However, when evaluating the heat dissipation characteristics of the heat radiation heat dissipating material 52 described below, since the amount of temperature decrease is small compared to heat transfer, the influence of temperature due to heat radiation from the back surface of the substrate cannot be ignored.

<Specific example of heat dissipation characteristic evaluation of heat dissipation material B>
Next, with reference to FIG. 14 and FIGS. 29 to 32, specific examples of measurement / evaluation of thermal radiation heat radiation characteristics and the like by each evaluation system with and without the heat radiation heat radiating material 52 will be described. It is a specific example corresponding to the evaluation system (12-16) of above-mentioned Embodiment 2-6. The processing corresponding to a specific example of measurement / evaluation in the case of using the heat radiant heat material 51 as described below may be performed by the processing unit 42 of the computer 30 in FIG.

[Seventh Specific Example]
As a seventh specific example, convection suppression between the film of the heat radiation heat dissipating material 52 formed on the evaluation semiconductor chip 1 and the facing surface will be described. In the seventh specific example, as an evaluation system including the heat radiation heat dissipation material 52, the evaluation system 12 of the second embodiment shown in FIG. 16 (a configuration including a heat sink 71 made of Al) and the third embodiment of FIG. An evaluation system 13 (a configuration including an alumite low heat reflecting plate 73) and an evaluation system 94 (a configuration including a heat insulating material 77) in FIG. 14 are used. The temperature measurement / evaluation was performed by changing the members (71, 73, 77) on the facing surface of the chip 1 (the second surface M2 on the side on which the heat radiation material 52 is formed).

  FIG. 29 shows the evaluation results of the seventh specific example. The temperature measurement value regarding the material (77, 71, 73) of the opposing surface of each structure (94, 12, 13) is shown. The horizontal axis represents the distance [mm] between the film of the heat radiation heat dissipation material 52 and the opposing surface (each component) (corresponding to k1 etc. described above). The vertical axis represents the measured temperature value (average temperature [° C.] in the region R1 of the resistance temperature detector (H1)) in each configuration. A triangle (Δ) is a case where the opposing surface is a heat insulating material 77 in the configuration of the evaluation system 94. A square (□) shows the configuration of the evaluation system 12 when the opposing surface is an Al heat sink 71 (emissivity 0.06) (the temperature of the heat sink 71 was controlled at 25 ° C.). A circle (◯) shows the configuration of the evaluation system 13 when the facing surface is a low heat reflecting plate 73 (emissivity 0.88) made of anodized (the temperature of the low heat reflecting plate 73 is controlled to 25 ° C.). The power applied to the chip 1 was the same (0.9 W) in each of the above configurations. In the configurations of 12, 13, the temperature was measured by controlling the distance (k2, k3) between the chip 1 and the facing surface at the same temperature. As the chip 1, the first chip 1a was used.

  As can be seen from FIG. 29, the temperature of the Al heat sink 71 (□) and the heat insulating material 77 (Δ) rises as the control distance increases. If air does not move, it has the characteristic of acting as a heat insulating material. This suggests that the heat insulating layer only thickens and no convection occurs within the range of this control distance. With the Al heat sink 71 (□) and the heat insulating material 77 (Δ), it can be confirmed that the heat insulating material 77 is higher in temperature because it is not forcibly cooled.

  Also, when the control distance is small between the Al heat sink 71 (□) and the alumite low heat reflector 73 (◯), for example 0.3500 mm, the Al heat sink 71 (□) with heat reflection is The temperature is lower than that of the low heat reflecting plate 73. This suggests that it was influenced by the Al heat sink 71 whose temperature was controlled at 25 ° C. For example, when the control distance is 0.535 mm and 0.735 mm, the heat radiation plate 71 (□) has a higher temperature than the low heat reflection plate 73 (◯). This suggests that the control distance is not affected by the temperature-controlled heat sink 71.

  In the seventh specific example (evaluation system 12, 13, etc.), the distance between the chip 1 and the facing surface is controlled to a distance (for example, 0.5 to 0.7 mm) that can suppress convection, and the distance from the facing surface is reduced. It has been found that the heat radiation characteristics of the heat radiation heat radiation material 52 can be evaluated without being affected by heat reflection and temperature.

[Eighth Example]
Next, as an eighth specific example, evaluation of thermal radiation heat radiation characteristics with and without the thermostatic chamber 150 (convection suppression) will be described. In the eighth specific example, the evaluation system 14 of the fourth embodiment shown in FIG. 18 is used as the evaluation system. The inner wall of the thermostatic chamber 150 of the evaluation system 14 is in the state of the Al state (emissivity 0.06) (150a) with heat reflection and the black body application state (emissivity 0.92) (150b) without heat reflection as described above. The applied power to 1 was changed and temperature measurement and evaluation were performed. The heat radiating plate 71 and the thermostatic chamber 150 were set to the same temperature. As the chip 1, the first chip 1a was used.

  FIG. 30 shows the evaluation results of the eighth example. The horizontal axis represents the power [W] applied to the chip 1a. The vertical axis represents the measured temperature value (average temperature of the resistance temperature detector) according to the presence or absence of convection suppression. A circle (◯) indicates that there is no convection suppression by the thermostat 150, and a square (□) indicates that there is convection suppression by the thermostat 150. The electric power applied to the chip 1a is set to 0.5 W, 0.7 W, 1.0 W, and 1.3 W, the region R2 of the metal wiring film 102 (H2) is heated, and the metal wiring film 101 (H1) of the platinum wiring layer. The temperature of all the measurement regions # 1 to # 9 in the region R1 of the resistance temperature sensor was measured, and the average temperature was obtained.

  As can be seen from FIG. 30, the average temperature of the platinum wiring layer is higher in the case of convection suppression (□) than in the case of no convection suppression (◯), and a difference of 10 ° C. occurs even at a low applied power of 0.5 W. The influence of convection on the evaluation of heat dissipation characteristics of the heat radiation heat dissipation material 52 is large.

[Ninth example]
Next, as a ninth specific example, convection and heat reflection suppression on the back side of the substrate will be described. In the ninth specific example, the evaluation system 15 of the fifth embodiment shown in FIG. 19 is used as the evaluation system. Like the evaluation system 15 described above, the members 2002 (the heat radiation plate 74, the heat insulating material 75, the low heat reflection plate) are provided on the back side (distance k3, space region 1003) of the substrate (200) of the evaluation system 14 in the thermostat 150. 76), when using the heat radiation heat dissipating material 52, the applied power to the chip 1 was changed and the temperature was measured and evaluated. The heat insulating material 75 is a convection suppressing member, and the low heat reflecting plate 76 is a low heat reflecting material (emissivity 0.90). The heat radiating plate 71 and the thermostatic chamber 150 were set to the same temperature. As the chip 1, the first chip 1a was used. The electric power applied to the chip 1a is 0.9 W, 1.2 W, 1.5 W, and 2.0 W, the metal wiring film 102 (H2) is heated, and the resistance measurement by the metal wiring film 101 (H1) of the platinum wiring layer is performed. The temperature of all the measurement area | regions # 1-9 of the area | region R1 of warm body was measured, and the average temperature was calculated | required.

  FIG. 31 shows the evaluation results of the ninth specific example. The horizontal axis represents the applied power [W]. The vertical axis is a temperature measurement value (average temperature of the resistance thermometer) corresponding to the presence or absence of convection and heat reflection suppression on the back side of the substrate. Squares (□) indicate suppression of convection and heat reflection on the back side of the substrate, and circles (◯) indicate no suppression.

  As can be seen from FIG. 31, the average temperature of the platinum wiring is higher in the case of suppression (□) than in the case of suppression (O), and the difference is about 5 ° C. when the applied power is 2.0 W, for example. The influence of convection and heat reflection on the back side of the substrate in the evaluation of the heat dissipation characteristics of the heat dissipation material 52 is large.

[Tenth example]
Next, as a tenth specific example, evaluation of the heat radiation heat dissipating material 52 having different emissivities is shown. In the tenth specific example, the evaluation system 15 of the fifth embodiment shown in FIG. 19 is used as the evaluation system. Measured in the case where only the chip 1 is used without using the heat radiation material 52 and in the case where the material a (emissivity 0.92) or material b (emissivity 0.94) is used as the heat radiation material 52 having different emissivity. Temperature and evaluation were performed. The emissivity of each heat radiation heat dissipation material 52 (a, b) was measured with a thermal emissivity meter (an apparatus having a function of measuring emissivity). In the tenth specific example, the power applied to the chip 1 is 0.9 W, 1.2 W, 1.5 W, and 2.0 W, the metal wiring film 102 (H2) is heated, and the metal wiring film of the platinum wiring layer The temperature of all the measurement regions # 1 to # 9 in the region R1 of the resistance thermometer using 101 (H1) was measured, and the average temperature was obtained. As the chip 1, a third chip 1c was used.

  FIG. 32 shows the evaluation results of the tenth specific example. The horizontal axis represents the applied power [W]. In the vertical axis, a triangle (Δ) is a temperature measurement value according to a case where only the chip 1 is present, a square (□) is a material a, and a circle (◯) is a material b.

  As can be seen from FIG. 32, the average temperature of the chip 1 is lower when the material a or b is applied (□, ○) than when the chip 1 is alone (Δ). It depends on the function of the material 52 (a, b). Further, when the materials a and b are compared, the average temperature of the chip 1 is lower in the material b having a larger thermal emissivity of 0.02. Thus, in the tenth specific example (evaluation system 15), the temperature change corresponding to the thermal emissivity can be evaluated with high accuracy.

[Effects]
As described above, according to each embodiment, the thermal resistance (temperature) in the target device (evaluation system) including the semiconductor device (chip 1) and the heat dissipation material (A / B) can be easily measured. The heat dissipation characteristics of the object can be accurately evaluated (high accuracy).

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say. The form which changed the combination of the element shown by each embodiment is possible.

  DESCRIPTION OF SYMBOLS 1-4 ... Semiconductor chip for evaluation, 11-16, 91-94 ... Evaluation system, 21 ... Ammeter / voltmeter, 22 ... Power supply, 30 ... Computer (evaluation processing system), 31 ... Thermal resistance / temperature measurement processing part , 32... Heat treatment unit, 40 .. arithmetic unit, 41... Heat transfer heat radiation material (heat radiation material A) -heat radiation characteristic evaluation processing unit, 42 .. heat radiation heat radiation material (heat radiation material B) -heat radiation characteristic evaluation processing unit, 51. Heat transfer heat dissipation material, 52 ... Heat radiation heat dissipation material, 60 ... GUI part, 71 ... Heat dissipation plate, 72 ... Temperature control device, 73 ... Low heat reflection plate, 74 ... Heat dissipation plate, 75 ... Heat insulation material, 76 ... Low heat reflection plate, Reference numerals 77: heat insulating material, 80: thermocouple, 100: silicon substrate (semiconductor substrate), 101: metal wiring film (first wiring (H1)), 102: metal wiring film (second wiring (H2)), 103 (103a, 103b) ... electrode, 103a ... first Electrode (D1), 103b ... second electrode (D2), 0.99 ... thermostat 151 ... temperature control device, 200 ... wiring board, 201 ... mounting board, 300 ... system.

Claims (12)

An evaluation system for a semiconductor device,
An evaluation semiconductor chip, a heat dissipation material formed on the evaluation semiconductor chip, a mounting substrate on which the evaluation semiconductor chip is mounted, and a heat dissipation plate for radiating the evaluation semiconductor chip. And
The semiconductor chip for evaluation is fixed at a distance between the mounting substrate and the heat sink,
The evaluation semiconductor chip includes a semiconductor substrate, one or more first wirings constituting one or more resistance thermometers on the first surface of the semiconductor substrate, and one or more regions. One or more second wirings constituting a heater comprising: a first electrode electrically connected to the first wiring; and a second electrode electrically connected to the second wiring And is formed,
The heat dissipation material is a heat transfer heat dissipation material that is fixed in contact between the second surface of the semiconductor substrate and the surface of the heat dissipation plate,
A device including the evaluation semiconductor chip, a heat dissipation material, a mounting substrate, and a heat dissipation plate is installed inside a thermostatic chamber,
A power source is connected to the second electrode, heating is performed for each heater region by the second wiring by power from the power source, an ammeter and a voltmeter are connected to the first electrode, and the current Temperature measurement is performed for each region of the resistance thermometer by the first wiring by a meter and a voltmeter, and based on the heating and temperature measurement, the region of the evaluation semiconductor chip in the convection suppression state by the thermostat Measurement of temperature and evaluation of heat transfer heat dissipation characteristics of the heat transfer heat dissipation material are performed ,
A second heat radiating plate having a low heat reflecting plate and a heat insulating material is provided as a second heat radiating plate arranged at a distance from a surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate. to have, and wherein the evaluation system of the semiconductor device. The semiconductor device evaluation system according to claim 1,
A thermocouple is disposed on the surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate,
An evaluation system for a semiconductor device, wherein a temperature is measured using the thermocouple, and an evaluation is performed based on a comparison with a measurement result of a temperature of a region of the evaluation semiconductor chip. An evaluation system for a semiconductor device ,
An evaluation semiconductor chip, a heat dissipation material formed on the evaluation semiconductor chip, a mounting substrate on which the evaluation semiconductor chip is mounted, and a heat dissipation plate for radiating the evaluation semiconductor chip. And
The semiconductor chip for evaluation is fixed at a distance between the mounting substrate and the heat sink,
The evaluation semiconductor chip includes a semiconductor substrate, one or more first wirings constituting one or more resistance thermometers on the first surface of the semiconductor substrate, and one or more regions. One or more second wirings constituting a heater comprising: a first electrode electrically connected to the first wiring; and a second electrode electrically connected to the second wiring And is formed,
The heat dissipation material is a heat radiation heat dissipation material formed on the second surface of the semiconductor substrate, and the distance between the surface of the heat radiation heat dissipation material and the surface of the heat dissipation plate is controlled without contact. And
A power source is connected to the second electrode, heating is performed for each heater region by the second wiring by power from the power source, an ammeter and a voltmeter are connected to the first electrode, and the current Temperature measurement is performed for each region of the resistance thermometer by the first wiring by a meter and a voltmeter, and based on the heating and temperature measurement, the temperature of the evaluation semiconductor chip region is measured, and the heat radiation heat dissipation The material's heat radiation and heat dissipation characteristics are evaluated ,
A second heat radiating plate having a low heat reflecting plate and a heat insulating material is provided as a second heat radiating plate arranged at a distance from a surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate. to have, and wherein the evaluation system of the semiconductor device. The semiconductor device evaluation system according to claim 3.
A thermocouple is disposed on the surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate,
An evaluation system for a semiconductor device, wherein a temperature is measured using the thermocouple, and an evaluation is performed based on a comparison with a measurement result of a temperature of a region of the evaluation semiconductor chip. In the evaluation system of the semiconductor device according to claim 3 or 4 ,
Having a low heat reflector disposed on the heat sink;
An evaluation system for a semiconductor device, wherein a distance between the surface of the heat radiation material and the surface of the low heat reflecting plate is controlled in a non-contact manner. In the evaluation system of the semiconductor device according to claim 3 or 4 ,
A device including the evaluation semiconductor chip, a heat dissipation material, a mounting substrate, a heat dissipation plate, and a low heat reflection plate is installed inside a thermostatic chamber,
Based on the heating and temperature measurement, the temperature measurement of the region of the semiconductor chip for evaluation and the evaluation of the heat radiation heat radiation characteristics of the heat radiation heat radiation material are performed in a convection suppression state by the thermostatic bath. A semiconductor device evaluation system. A method for evaluating a semiconductor device using an evaluation system including a semiconductor chip for evaluation,
The evaluation system includes an evaluation semiconductor chip, a heat dissipation material formed for the evaluation semiconductor chip, a mounting substrate on which the evaluation semiconductor chip is mounted, and heat dissipation for dissipating the evaluation semiconductor chip. A board, and
The semiconductor chip for evaluation is fixed at a distance between the mounting substrate and the heat sink,
The evaluation semiconductor chip includes a semiconductor substrate, one or more first wirings constituting one or more resistance thermometers on the first surface of the semiconductor substrate, and one or more regions. One or more second wirings constituting a heater comprising: a first electrode electrically connected to the first wiring; and a second electrode electrically connected to the second wiring And is formed,
The heat dissipation material is a heat transfer heat dissipation material that is fixed in contact between the second surface of the semiconductor substrate and the surface of the heat dissipation plate,
In each state of the state where the evaluation system is installed inside the thermostat and the state installed outside,
A first step in which heating is performed for each region of the heater by the second wiring by power from a power source connected to the second electrode; and an ammeter and a voltmeter connected to the first electrode The evaluation semiconductor according to the second step in which temperature measurement is performed for each region of the resistance temperature detector by the first wiring, and the presence or absence of a convection suppression state by the thermostat based on the heating and temperature measurement measurement of the temperature of the chip area, and have a third step of evaluation of the heat transfer heat dissipation properties of the heat transfer heat dissipation material is carried out,
A second heat radiating plate having a low heat reflecting plate and a heat insulating material is provided as a second heat radiating plate arranged at a distance from a surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate. A method for evaluating a semiconductor device, comprising: In the evaluation method of the semiconductor device according to claim 7,
A thermocouple is disposed on the surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate,
A method for evaluating a semiconductor device, characterized in that a temperature is measured using the thermocouple and an evaluation is performed based on a comparison with a measurement result of a temperature of the region of the semiconductor chip for evaluation. In the evaluation method of the semiconductor device according to claim 7 or 8 ,
In each state of the Al state and the black body application state on the inner wall of the thermostatic bath, the first to third steps are performed, and evaluation according to the presence or absence of heat reflection is performed. Evaluation method. A method for evaluating a semiconductor device using an evaluation system including a semiconductor chip for evaluation,
The evaluation system includes an evaluation semiconductor chip, a heat dissipation material formed for the evaluation semiconductor chip, a mounting substrate on which the evaluation semiconductor chip is mounted, and heat dissipation for dissipating the evaluation semiconductor chip. A board, and
The semiconductor chip for evaluation is fixed at a distance between the mounting substrate and the heat sink,
The evaluation semiconductor chip includes a semiconductor substrate, one or more first wirings constituting one or more resistance thermometers on the first surface of the semiconductor substrate, and one or more regions. One or more second wirings constituting a heater comprising: a first electrode electrically connected to the first wiring; and a second electrode electrically connected to the second wiring And is formed,
The heat dissipation material is a heat radiation heat dissipation material formed on the second surface of the semiconductor substrate, and the distance between the surface of the heat radiation heat dissipation material and the surface of the heat dissipation plate is controlled without contact. And
Each state of the 1st structure which used the heat sink of the heat radiation material as the heat sink made of Al, the second structure made of an alumite low heat reflecting plate, and the third structure made of a heat insulating material In
A first step in which heating is performed for each region of the heater by the second wiring by power from a power source connected to the second electrode; and an ammeter and a voltmeter connected to the first electrode A second step in which temperature measurement is performed for each region of the resistance thermometer by the first wiring; measurement of the temperature of the evaluation semiconductor chip region; and heat radiation radiation based on the heating and temperature measurement. and a third step of evaluation of the thermal radiation heat radiation characteristics of the material takes place, have rows evaluation in accordance with the presence or absence of heat reflecting,
The evaluation system includes a low heat reflection plate and a heat insulating material as a second heat radiating plate arranged at a distance from a surface opposite to the surface on which the evaluation semiconductor chip is mounted on the mounting substrate. 2 heat sinks,
Evaluation of a semiconductor device, characterized in that in the state having the second heat dissipation plate, the first to third steps are performed, and evaluation is performed in a state in which the influence of thermal radiation from the mounting substrate is suppressed. Method. In the evaluation method of the semiconductor device according to claim 10,
A state in which the heat dissipation material is not formed on the second surface of the semiconductor substrate, a state in which a first heat radiation heat dissipation material having a first emissivity is formed, and a second state having a second emissivity. A semiconductor device evaluation method comprising performing the first to third steps and performing an evaluation according to a thermal emissivity in each state including a state in which a heat radiation heat dissipation material is formed. In the evaluation method of the semiconductor device according to claim 10 or 11 ,
The evaluation system performs the first to third steps in each of a state where the evaluation system is installed inside the thermostatic chamber and a state where the evaluation system is installed outside, depending on the presence or absence of a convection suppression state by the thermostatic chamber. A method for evaluating a semiconductor device, characterized in that the evaluation is performed.