TWI434381B - Measurement device and thermal conductivity estimation method - Google Patents

Measurement device and thermal conductivity estimation method Download PDF

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TWI434381B
TWI434381B TW097106971A TW97106971A TWI434381B TW I434381 B TWI434381 B TW I434381B TW 097106971 A TW097106971 A TW 097106971A TW 97106971 A TW97106971 A TW 97106971A TW I434381 B TWI434381 B TW I434381B
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heat
temperature
heating
film
measuring
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TW097106971A
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TW200937595A (en
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Susumu Ueda
Kenji Osawa
Katsuya Tsuruta
Toshiaki Kotani
Kei Mizuta
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Fuchigami Micro Co
Univ Kagoshima
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00Investigating or analyzing materials by the use of thermal means
    • G01N25/18Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/24Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor being self-supporting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013Heaters using resistive films or coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017Manufacturing methods or apparatus for heaters

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)

Description

測定裝置及導熱率估計方法Measuring device and thermal conductivity estimating method

本發明係關於用於評價傳熱機器效能之加熱裝置及測定裝置。The present invention relates to a heating device and an assay device for evaluating the performance of a heat transfer machine.

熱管係為在封入有工作液之容器一端吸熱而使該工作液蒸發、並在該容器之另一端使該工作液凝結而放熱之裝置,被應用於電子機器之冷卻。例如,日本專利特開2007-208262號、特開2005-136117號中提出將熱管與散熱片組合之冷卻器(在本說明書中稱為附熱管冷卻器),其將IC晶片等電子部件與熱管進行導熱連接,以將電子部件所產生之熱透過熱管輸送至散熱片而放熱。The heat pipe is a device that absorbs heat at one end of a container in which a working fluid is sealed to evaporate the working fluid, and condenses the working fluid at the other end of the container to release heat, and is applied to cooling of an electronic device. A cooler (referred to as a heat pipe cooler in this specification) that combines a heat pipe and a heat sink, which is an electronic component such as an IC chip and a heat pipe, is proposed in Japanese Laid-Open Patent Publication No. 2007-208262, No. 2005-136117. Conductive connection is made to dissipate heat generated by the electronic components through the heat pipe to the heat sink.

附熱管冷卻器之效能係以下式所表示之總熱阻RT 進行評價: RT =(T1 -T2 )/W   (式1)The performance of the attached heat pipe cooler is evaluated by the total thermal resistance R T represented by the following equation: R T = (T 1 - T 2 ) / W (Formula 1)

其中,W係為熱管之單位時間傳熱量,T1 係為附熱管冷卻器之吸熱部之溫度(=冷卻對象之表面溫度),T2 係為附熱管冷卻器之周圍環境之溫度。Wherein, W is the heat transfer amount per unit time of the heat pipe, T 1 is the temperature of the heat absorbing portion of the heat pipe cooler (= surface temperature of the cooling target), and T 2 is the temperature of the surrounding environment of the heat pipe cooler.

或者,亦存在取代總熱阻RT 而使用工作熱阻RW 之情形。工作熱阻RW 係用下式表示: RW =(T1 -T'2 )/W   (式2)Alternatively, there is also a case where the total thermal resistance R T is used instead of the working thermal resistance R W . The working thermal resistance R W is expressed by the following formula: R W =(T 1 -T' 2 )/W (Equation 2)

其中,T'2 係為附熱管冷卻器之放熱部之溫度。Among them, T' 2 is the temperature of the heat release portion of the heat pipe cooler.

另外,附熱管冷卻器之製造商係用如下方法逐一量測附熱管冷卻器之總熱阻RT ,以確認其滿足預定標準:(1)在測定附熱管冷卻器之吸熱部之溫度(=冷卻對象之表面溫度)T1 之同時,用電加熱器加熱; (2)T1 隨時間而緩慢上升,但不久放熱量與發熱量達到平衡,使T1 成為一定(穩定狀態);(3)測定T1 成為一定時之周圍環境溫度T2 及電加熱器之耗電量,算出附熱管冷卻器之總熱阻RT (達到穩定狀態時附熱管冷卻器之傳熱量W等於電加熱器之發熱量,電加熱器之發熱量可由耗電量算出)。In addition, the manufacturer of the heat pipe cooler measures the total thermal resistance R T of the attached heat pipe cooler one by one to confirm that it meets the predetermined standard: (1) in measuring the temperature of the heat absorbing portion of the heat pipe cooler (= Cooling the surface temperature of the object) T 1 while heating with an electric heater; (2) T 1 rises slowly with time, but soon the heat release and heat generation reach equilibrium, making T 1 constant (steady state); (3 Measuring the ambient temperature T 2 when T 1 becomes constant and the power consumption of the electric heater, and calculating the total thermal resistance R T of the heat pipe cooler (the heat transfer amount W of the heat pipe cooler is equal to the electric heater when the steady state is reached) The amount of heat generated by the electric heater can be calculated from the power consumption.

然而,根據上述方法測定總熱阻RT 存在如下問題。However, the measurement of the total thermal resistance R T according to the above method has the following problems.

為使電加熱器之發熱量等於附熱管冷卻器之傳熱量(=放熱量),必須進行絕熱,以使電加熱器之熱量不向附熱管冷卻器以外散發。因此,存在電加熱器尺寸和重量變大之問題。In order for the electric heater to generate heat equal to the heat transfer amount of the heat pipe cooler (= heat release), heat insulation must be performed so that the heat of the electric heater is not dissipated outside the heat pipe cooler. Therefore, there is a problem that the size and weight of the electric heater become large.

另外,由於電加熱器難以完全絕熱,且尚無用以測定及修正散發至外部之熱量之手段,因而存在不能正確進行測定之問題。Further, since the electric heater is difficult to be completely insulated, and there is no means for measuring and correcting the amount of heat radiated to the outside, there is a problem that the measurement cannot be performed correctly.

另外,IC晶片等會存在發熱部位不均之情形。即,會存在IC晶片之特定部位出現高溫之情形。業界在為此而尋求重現此種現象以評價附熱管冷卻器效能之方法,但此需要準備專用之電加熱器。In addition, there is a case where the heat generating portion is uneven in the IC chip or the like. That is, there is a case where a high temperature occurs in a specific portion of the IC chip. The industry is seeking to reproduce this phenomenon to evaluate the effectiveness of the heat pipe cooler, but it requires a dedicated electric heater.

本發明即為解決該等課題而提出,旨在提供適可測定附熱管冷卻器之熱阻之加熱裝置。本發明亦提供適可測定附熱管冷卻器之熱阻之測定裝置。另外,本發明亦提供用以簡易地估計附熱管冷卻器之有效導熱率之方法。The present invention has been made to solve these problems, and aims to provide a heating device suitable for measuring the thermal resistance of a heat pipe cooler. The invention also provides an assay device suitable for determining the thermal resistance of a heat pipe cooler. In addition, the present invention also provides a method for easily estimating the effective thermal conductivity of an attached heat pipe cooler.

為達成上述目的,本發明之加熱裝置係藉由對形成於基板表面 之加熱薄膜通電而進行發熱之加熱裝置,其特徵在於設有複數個加熱薄膜和對該複數個加熱薄膜分別獨立供電之供電端子。In order to achieve the above object, the heating device of the present invention is formed on the surface of the substrate by pairing A heating device that heats a film to conduct heat, and is characterized in that a plurality of heating films and power supply terminals for independently supplying power to the plurality of heating films are provided.

另外,亦可將該等供電端子形成於該基板之底面,並設置用以使該等供電端子與該等加熱薄膜電性連接之通孔。In addition, the power supply terminals may be formed on the bottom surface of the substrate, and through holes for electrically connecting the power supply terminals to the heating films may be disposed.

另外,亦可於該基板之底面上形成複數個感測薄膜。In addition, a plurality of sensing films may be formed on the bottom surface of the substrate.

另外,於設置並保持該基板之同時,亦設有一安裝基板,其上形成用以使該等加熱薄膜和該等感測薄膜與一外部機器電性連接之配線圖案。In addition, while the substrate is disposed and held, a mounting substrate is also formed thereon, and a wiring pattern for electrically connecting the heating film and the sensing film to an external device is formed thereon.

另外,該配線圖案於各該供電端子處設有複數條供電線路,將與該等供電端子接觸之一始端和位於該安裝基板之邊緣部且與該外部機器連接之一終端連通,並且該複數條供電線路之長度全部相等。In addition, the wiring pattern is provided with a plurality of power supply lines at each of the power supply terminals, and a start end that is in contact with the power supply terminals and a terminal that is located at an edge portion of the mounting substrate and is connected to the external device, and the plurality of terminals The lengths of the power supply lines are all equal.

另外,本發明之測定裝置之特徵在於,該測定裝置係由該加熱裝置和該控制裝置構成,且該控制裝置具有:電力控制手段,用以供給該等加熱薄膜預定電力;感測控制手段,用以量測該等感測薄膜及該等加熱薄膜之溫度;運算手段,用以根據該感測控制手段所量測之該等感測薄膜及該等加熱薄膜之溫度,算出從該基板底面流出之一流出熱量。Further, the measuring device of the present invention is characterized in that the measuring device is constituted by the heating device and the control device, and the control device has: a power control means for supplying predetermined heating power to the heating films; and a sensing control means, For measuring the temperature of the sensing film and the heating film; calculating means for calculating the temperature of the sensing film and the heating film measured by the sensing control means from the bottom surface of the substrate One of the outflows emits heat.

另外,該運算手段可根據該感測控制手段所量測之該等感測薄膜之溫度,算出該基板底面之一溫度分佈。In addition, the calculation means calculates a temperature distribution of one of the bottom surfaces of the substrate based on the temperatures of the sensing films measured by the sensing control means.

另外,該運算手段可根據由該電力控制手段供給該等加熱薄膜之電力,算出從該等加熱薄膜產生之一發熱量。Further, the calculation means calculates the amount of heat generated from the heating film based on the electric power supplied to the heating film by the power control means.

另外,該運算手段可從該等加熱薄膜所產生之發熱量中減去從 該基板底面流出之流出熱量,而算出從該等加熱薄膜上所放出之一放出熱量。In addition, the calculation means can subtract the heat generated by the heating film. The heat flowing out from the bottom surface of the substrate is calculated, and one of the heat released from the heating film is calculated.

另外,設有用以測定該測定裝置之周圍環境溫度之環境溫度測定手段,同時該運算手段係根據該環境溫度測定手段所檢出之溫度、該感測控制手段所量測之該等加熱薄膜之溫度、以及從該等加熱薄膜之上面所放出之一放熱量,而算出設於該等加熱薄膜上之測試體之熱阻。Further, an ambient temperature measuring means for measuring the ambient temperature of the measuring device is provided, and the calculating means is based on the temperature detected by the ambient temperature measuring means and the heated film measured by the sensing control means. The temperature and the amount of heat released from the upper surface of the heating film were used to calculate the thermal resistance of the test body provided on the heating film.

另外,設有放熱部溫度測定手段,用以測定設於該等加熱薄膜上之該測試體之放熱部之表面溫度,同時該運算手段係根據該放熱部溫度測定手段所檢出之溫度、該感測控制手段所量測之該等加熱薄膜之溫度以及從該等加熱薄膜上面所放出之放熱量,而算出該測試體之熱阻。Further, a heat releasing portion temperature measuring means for measuring a surface temperature of the heat radiating portion of the test body provided on the heating film, and the calculating means is based on a temperature detected by the heat releasing portion temperature measuring means, The thermal resistance of the test body is calculated by sensing the temperature of the heated film measured by the control means and the amount of heat released from the heated film.

另外,設有溫度監視手段,用以監視該感測控制手段所量測之該等加熱薄膜之溫度之時間變化,同時該運算手段於該等加熱薄膜之溫度無時間變化時,算出該測試體之熱阻。In addition, a temperature monitoring means is provided for monitoring the time change of the temperature of the heating film measured by the sensing control means, and the calculating means calculates the test body when the temperature of the heating film does not change with time. Thermal resistance.

本發明之導熱率估計方法之特徵在於包含下列步驟:一預備量測步驟,將一導熱率已知之放熱體,設置於熱源上,在該熱源之發熱量與放熱量達到均衡、從而使該熱源之溫度達到一定之穩定狀態下,量測該放熱體之溫度分佈;一計算步驟,求解關於該放熱體和該熱源之熱傳導方程式,計算在該熱源之發熱量和放熱量達到均衡且該熱源之溫度達到一定之穩定狀態下,該放熱體之溫度分佈;一邊界條件決定步驟,比較該預備量測步驟所得之溫度分佈和該計算步驟所得之溫度分佈,決定使二者達到一致之該熱 傳導方程式之一邊界條件;一穩定溫度估計步驟,代入該放熱體之導熱率,求解利用由該邊界條件決定步驟所決定之邊界條件之該熱傳導方程式,估計該熱源之發熱量和放熱量達到均衡且該熱源之溫度達到一定之穩定狀態下該熱源之溫度;一近似式決定步驟,根據該穩定溫度估計步驟所得到之該放熱體之導熱率與該熱源溫度之關係,決定表示二者關係之近似式;一測試體量測步驟,將測試體設置於熱源上,量測該熱源之發熱量與放熱量達到均衡且該熱源之溫度達到一定時該熱源之溫度;以及一導熱率估計步驟,根據該測試體量測步驟所得之該熱源之溫度和該近似式決定步驟所得之近似式,求出該測試體之導熱率。The thermal conductivity estimation method of the present invention is characterized in that it comprises the following steps: a preliminary measurement step of disposing a heat radiator having a known thermal conductivity on a heat source, and the heat generation and the heat release amount of the heat source are equalized, thereby making the heat source When the temperature reaches a certain steady state, the temperature distribution of the heat radiator is measured; a calculation step is performed to solve the heat conduction equation about the heat radiator and the heat source, and the heat generation and the heat release amount of the heat source are calculated to be equalized and the heat source is The temperature distribution of the exothermic body when the temperature reaches a certain steady state; a boundary condition determining step, comparing the temperature distribution obtained by the preliminary measuring step and the temperature distribution obtained by the calculating step, determining the heat that is consistent with the two a boundary condition of the conduction equation; a stable temperature estimation step, substituting the thermal conductivity of the exothermic body, solving the heat conduction equation determined by the boundary condition determined by the boundary condition determining step, and estimating the heat generation and the heat release amount of the heat source to reach equilibrium And the temperature of the heat source reaches a certain steady state temperature of the heat source; an approximate determination step, according to the relationship between the thermal conductivity of the heat release body obtained by the stable temperature estimation step and the heat source temperature, determining the relationship between the two An approximate body; a test body measuring step, the test body is disposed on the heat source, measuring the heat source and the heat release amount of the heat source to be equalized and the temperature of the heat source reaches a certain temperature; and a thermal conductivity estimating step, The thermal conductivity of the test body is determined according to the temperature of the heat source obtained by the test body measuring step and the approximate expression obtained by the approximation determining step.

該熱源可係為與上述任一結構有關之加熱裝置。The heat source can be a heating device associated with any of the above structures.

本發明之加熱裝置能夠獨立控制複數個加熱薄膜,因此能夠模擬發熱偏於特定部位之熱源。另外,本發明之加熱裝置能夠檢出基板表面及底面之溫度,因此,能夠算出流出至基板底面之熱量。Since the heating device of the present invention can independently control a plurality of heating films, it is possible to simulate a heat source in which heat is applied to a specific portion. Further, since the heating device of the present invention can detect the temperature of the surface of the substrate and the bottom surface, it is possible to calculate the amount of heat flowing out to the bottom surface of the substrate.

本發明之測定裝置能夠藉由從加熱薄膜產生之熱量中減去流出至基板底面之熱量,而算出測試體所傳導之淨熱量。另外,能夠自動量測測試體之熱阻。The measuring apparatus of the present invention can calculate the amount of heat transferred from the test body by subtracting the amount of heat flowing out from the heat generated by the heating film to the bottom surface of the substrate. In addition, the thermal resistance of the test body can be automatically measured.

根據本發明之導熱率估計方法,將測試體置於熱源上,僅量測熱源溫度達到穩定狀態時之溫度便可獲知測試體之導熱率。According to the thermal conductivity estimation method of the present invention, the test body is placed on a heat source, and the thermal conductivity of the test body can be known only by measuring the temperature at which the temperature of the heat source reaches a steady state.

以下就實施本發明之最佳形態進行說明。Hereinafter, the best mode for carrying out the invention will be described.

[加熱裝置之總體結構][Overall structure of heating device]

第1圖係為表示本發明加熱裝置之概念結構之側面圖。如第1圖所示,加熱裝置1係用以加熱附熱管冷卻器2之裝置,其係由加熱基板3及安裝基板4所構成。Fig. 1 is a side view showing the conceptual structure of the heating device of the present invention. As shown in Fig. 1, the heating device 1 is a device for heating the heat pipe cooler 2, which is composed of a heating substrate 3 and a mounting substrate 4.

此外,附熱管冷卻器2具有熱管5和散熱片6,係為藉由與IC晶片(未圖示)接觸以將IC晶片所產生之熱量經熱管5輸送至散熱片6而放熱之冷卻器。Further, the heat pipe cooler 2 has a heat pipe 5 and a heat sink 6, which is a cooler which is heated by the IC wafer (not shown) to transfer heat generated by the IC chip to the heat sink 6 through the heat pipe 5.

加熱基板3係由耐熱性陶瓷構成,其表面上形成複數個加熱薄膜7。另外,加熱基板3上設有通孔(未圖示),供電端子8穿過該通孔而從加熱基板3之底面突出。供電端子8係為供給加熱薄膜7電力之端子,加熱薄膜7經由供電端子8供電而發熱。另外,藉由測定供電端子8間之電阻,即可得知加熱薄膜7之溫度。The heating substrate 3 is made of a heat resistant ceramic, and a plurality of heating films 7 are formed on the surface thereof. Further, a through hole (not shown) is provided in the heating substrate 3, and the power supply terminal 8 passes through the through hole and protrudes from the bottom surface of the heating substrate 3. The power supply terminal 8 is a terminal for supplying electric power to the heating film 7, and the heating film 7 is supplied with power via the power supply terminal 8 to generate heat. Further, by measuring the electric resistance between the power supply terminals 8, the temperature of the heating film 7 can be known.

另外,加熱基板3之底面設有複數個感測薄膜9。藉由測定感測薄膜9之電阻,即可得知加熱基板3底面之溫度。Further, a plurality of sensing films 9 are provided on the bottom surface of the heating substrate 3. The temperature of the bottom surface of the heating substrate 3 can be known by measuring the electric resistance of the sensing film 9.

安裝基板4係用以設置並固定加熱基板3之石英基板,加熱基板3係藉由緊固件(未圖示)而固定於安裝基板4上之預定位置。 另外,於安裝基板4之表面形成供電用配線薄膜10及感測用配線薄膜11。供電用配線薄膜10係為從外部機器(未圖示)至加熱薄膜7之供電用配線圖案,感測用配線薄膜11則係為使外部機器與感測薄膜9電性連接之配線圖案。The mounting substrate 4 is for fixing and fixing the quartz substrate of the heating substrate 3, and the heating substrate 3 is fixed to a predetermined position on the mounting substrate 4 by a fastener (not shown). Moreover, the power supply wiring film 10 and the sensing wiring film 11 are formed on the surface of the mounting substrate 4. The power supply wiring film 10 is a power supply wiring pattern from an external device (not shown) to the heating film 7, and the sensing wiring film 11 is a wiring pattern that electrically connects the external device and the sensing film 9.

[加熱基板之表面][heating the surface of the substrate]

第2圖係為加熱基板3之外形圖,其中(a)係為其表面之平面圖、(b)係為設有加熱薄膜7之部位之放大圖、(c)係為一局部剖面圖。Fig. 2 is an external view of the heating substrate 3, wherein (a) is a plan view of the surface thereof, (b) is an enlarged view of a portion where the heating film 7 is provided, and (c) is a partial cross-sectional view.

如第2圖(a)所示,加熱基板3形成為邊長50mm之正方形,其 中央形成有邊長10mm之正方形加熱面12。加熱面12係模擬附熱管冷卻器2之冷卻對象(即IC晶片)之部分,有5個加熱薄膜7。As shown in Fig. 2(a), the heating substrate 3 is formed into a square having a side length of 50 mm. A square heating surface 12 having a side length of 10 mm is formed in the center. The heating surface 12 is a part of a cooling object (i.e., an IC wafer) that simulates the heat pipe cooler 2, and has five heating films 7.

另外,如第2圖(b)所示,在加熱面12上設於其中央之正方形加熱薄膜7周圍,配置4個L字形加熱薄膜7。另外,在加熱薄膜7之端部設有供電端子8,每個加熱薄膜各設2個,供電端子8從加熱基板3之表面貫穿至底面之通孔13後,突出於加熱基板3之底面(參照第2圖(c))。再者,加熱基板3之厚度係為約1mm。Further, as shown in Fig. 2(b), four L-shaped heating films 7 are disposed around the square heating film 7 provided at the center of the heating surface 12. Further, a power supply terminal 8 is provided at an end portion of the heating film 7, and each of the heating films is provided. The power supply terminal 8 protrudes from the surface of the heating substrate 3 to the through hole 13 of the bottom surface, and protrudes from the bottom surface of the heating substrate 3 ( Refer to Figure 2 (c)). Further, the thickness of the heating substrate 3 is about 1 mm.

如此,在5個加熱薄膜7上分別設有供電端子8,因此,可分別獨立地控制各該5個加熱薄膜7。即,可通電至5個加熱薄膜7之一部分上,並可調節特定加熱薄膜7之發熱量,因此能夠模擬發熱部位不均之IC晶片。In this manner, since the power supply terminals 8 are respectively provided on the five heating films 7, the five heating films 7 can be independently controlled. That is, it is possible to conduct electricity to one of the five heating films 7, and to adjust the amount of heat generated by the specific heating film 7, so that it is possible to simulate an IC wafer in which the heat generation portion is uneven.

另外,加熱薄膜7之材料係選自在通電後能發熱、且其電阻隨溫度而變化之物質中之適當材料,在本實施形態中係採用鉑。Further, the material of the heating film 7 is selected from a material which is capable of generating heat after energization and whose electric resistance changes with temperature. In the present embodiment, platinum is used.

[加熱基板之底面][heating the bottom surface of the substrate]

第3圖係為表示加熱基板3之底面之平面圖,其中(a)係為一總體圖、(b)係為感測薄膜9之一放大圖。3 is a plan view showing the bottom surface of the heating substrate 3, wherein (a) is a general view, and (b) is an enlarged view of the sensing film 9.

如第3圖(a)所示,橫向與斜向(對角線方向)地在加熱基板3之底面上佈置9個感測薄膜9。如下文所述,選擇此種佈置係為了根據從9個感測薄膜9所得之溫度資料來估計加熱基板3底面之總體溫度分佈。另外,選擇在不與加熱薄膜7之供電端子8相干涉(相重疊)之部位配置感測薄膜9。As shown in Fig. 3(a), nine sensing films 9 are arranged on the bottom surface of the heating substrate 3 in the lateral direction and the oblique direction (diagonal direction). As described below, this arrangement is selected to estimate the overall temperature distribution of the bottom surface of the heating substrate 3 based on the temperature data obtained from the nine sensing films 9. Further, the sensing film 9 is selected so as not to interfere (overlap) with the power supply terminal 8 of the heating film 7.

另外,感測薄膜9係呈邊長為約2.4mm之正方形,並具有如第3圖(b)所示之圖案。另外,在感測薄膜9之圖案二端設有感測端 子14,藉由量測感測端子14間之電阻即可獲知感測薄膜9之溫度。Further, the sensing film 9 has a square shape having a side length of about 2.4 mm and has a pattern as shown in Fig. 3(b). In addition, a sensing end is provided at the two ends of the pattern of the sensing film 9. Sub-14, the temperature of the sensing film 9 can be known by measuring the resistance between the sensing terminals 14.

此外,感測薄膜9之材料可在其電阻隨溫度而變化之物質中適當選擇,在本實施形態中係採用鉑。Further, the material of the sensing film 9 can be appropriately selected among substances whose electric resistance changes with temperature, and in the present embodiment, platinum is used.

[安裝基板][mounting substrate]

第4圖係表示安裝基板4之表面之平面圖,其中(a)係為安裝基板4之一單體、(b)則表示安裝基板4上搭載加熱基板3後之狀態。4 is a plan view showing the surface of the mounting substrate 4, wherein (a) is a single body of the mounting substrate 4, and (b) shows a state in which the heating substrate 3 is mounted on the mounting substrate 4.

如第4圖所示,安裝基板4係為邊長為150mm之正方形石英基板,其表面上形成有10條供電用配線薄膜10和18條感測用配線薄膜11。As shown in Fig. 4, the mounting substrate 4 is a square quartz substrate having a side length of 150 mm, and ten power supply wiring films 10 and 18 sensing wiring films 11 are formed on the surface.

供電用配線薄膜10係為導電體薄膜,用以連接設於安裝基板4邊緣部之電極墊15和設於安裝基板4中央部之連接墊16。電極墊15係為用以電性連接未圖示之外部機器之連接部,連接墊16係為與突出於加熱基板3底面之供電端子8相接觸之連接部。即,供電用配線薄膜10係用作電性連接該外部機器和加熱薄膜7之配線。The power supply wiring film 10 is a conductor film for connecting the electrode pads 15 provided at the edge portions of the mounting substrate 4 and the connection pads 16 provided at the central portion of the mounting substrate 4. The electrode pad 15 is a connection portion for electrically connecting an external device (not shown), and the connection pad 16 is a connection portion that comes into contact with the power supply terminal 8 that protrudes from the bottom surface of the heating substrate 3. In other words, the power supply wiring film 10 is used as a wiring for electrically connecting the external device and the heating film 7.

此外,該10條供電用配線薄膜10之電極墊15與連接墊16之相對位置關係各不相同,藉由按照電極墊15與連接墊16之相對位置關係來使路徑彎折,使得從電極墊15至連接墊16之路徑長度對於全部供電用配線薄膜10而言皆相等。此旨在消除因供電用配線薄膜10之配線電阻之差異而造成發熱量和溫度之量測誤差。In addition, the relative positional relationship between the electrode pads 15 of the ten power supply wiring films 10 and the connection pads 16 is different, and the path is bent by the relative positional relationship between the electrode pads 15 and the connection pads 16, so that the electrode pads are The path length of 15 to the connection pad 16 is equal for all of the power supply wiring films 10. This is to eliminate the measurement error of the heat generation amount and the temperature due to the difference in the wiring resistance of the power supply wiring film 10.

感測用配線薄膜11係為導電體薄膜,用以連接設於安裝基板4邊緣部之電極墊17和設於安裝基板4中央部之連接墊18。電極墊17係用以電性連接未圖示之外部機器之連接部,連接墊18係與設 於加熱基板3底面之感測薄膜9之感測端子14相接觸之連接部。即,感測用配線薄膜11係用作電性連接該外部機器與感測薄膜7之配線。The sensing wiring film 11 is a conductor film for connecting the electrode pads 17 provided on the edge portions of the mounting substrate 4 and the connection pads 18 provided on the central portion of the mounting substrate 4. The electrode pad 17 is for electrically connecting a connection portion of an external device (not shown), and the connection pad 18 is provided The connecting portion of the sensing film 14 of the sensing film 9 on the bottom surface of the substrate 3 is in contact with each other. In other words, the sensing wiring film 11 is used as a wiring for electrically connecting the external device and the sensing film 7.

此外,基於與供電用配線薄膜10相同之理由,感測用配線薄膜11亦藉由路徑彎折,而使得從電極墊17至連接墊18之路徑長度對於全部感測用配線薄膜11而言皆相等。Further, for the same reason as the power supply wiring film 10, the sensing wiring film 11 is also bent by the path so that the path length from the electrode pad 17 to the connection pad 18 is the same for all the sensing wiring films 11 equal.

[熱阻之測定方法][Method for measuring thermal resistance]

第5圖係例示使用加熱裝置1測定附熱管冷卻器2之總熱阻RT 之原理示意圖。Fig. 5 is a schematic view showing the principle of measuring the total thermal resistance R T of the heat pipe cooler 2 using the heating device 1.

在第5圖中,WP 係為單位時間內加熱薄膜7所產生之熱量,WF 係為單位時間內附熱管冷卻器2從加熱薄膜7吸収並排出至外部環境之熱量、即附熱管冷卻器2每單位時間之傳熱量。另外,WB 係為單位時間內從加熱薄膜7背面經由加熱基板3排出至外部環境之熱量。In Fig. 5, W P is the heat generated by heating the film 7 per unit time, and the W F is the heat absorbed by the heat pipe cooler 2 from the heating film 7 per unit time and discharged to the external environment, that is, the heat pipe is cooled. The amount of heat transfer per unit time. Further, W B is heat that is discharged from the back surface of the heating film 7 to the external environment via the heating substrate 3 per unit time.

另外,T1 係為加熱薄膜7之溫度,T2 係為外部環境之溫度,T3 係為加熱基板3底面之溫度。Further, T 1 is the temperature of the heating film 7 , T 2 is the temperature of the external environment, and T 3 is the temperature of the bottom surface of the heating substrate 3 .

附熱管冷卻器2之總熱阻RT 係由下式計算: RT =(T1 -T2 )/WF    (式3)The total thermal resistance R T of the attached heat pipe cooler 2 is calculated by the following formula: R T = (T 1 - T 2 ) / W F (Formula 3)

由於T1 係為加熱薄膜7之溫度,可根據加熱薄膜7之電阻值算出。另外,由於T2 係為外部環境之溫度,可用公知之各種溫度量測手段量測。因此,獲知WF 即可求得總熱阻RTSince T 1 is the temperature of the heating film 7, it can be calculated from the resistance value of the heating film 7. In addition, since the T 2 system is the temperature of the external environment, it can be measured by various known temperature measuring means. Therefore, the total thermal resistance R T can be obtained by knowing W F .

此處,考量達到T1 之時間變化消失之狀態,即穩定狀態。在穩定狀態下,加熱薄膜7所產生之熱量全部排出至外部,因此,下 式成立: WP =WF +WB    (式4) ∴WF =WP -WB    (式5)Here, the state in which the time change of T 1 disappears, that is, the steady state is considered. In the steady state, all the heat generated by the heating film 7 is discharged to the outside, and therefore, the following formula holds: W P = W F + W B (Expression 4) ∴ W F = W P - W B (Expression 5)

由於WP 係為單位時間內加熱薄膜7所產生之熱量,故能夠用加熱薄膜7之耗電量乘以熱電變換效率而求得。另一方面,WB 係用以下步驟算出。Since W P is a heat generated by heating the film 7 per unit time, it can be obtained by multiplying the power consumption of the heating film 7 by the thermoelectric conversion efficiency. On the other hand, W B is calculated by the following procedure.

設加熱薄膜7之面積為A、加熱基板3之板厚為t,由於與A相比t很小,從加熱薄膜7之背面流入加熱基板3底面之熱量可被視為垂直地流入加熱基板3,因此,下式成立。式中,k係為加熱基板3之導熱率。The area of the heating film 7 is A, and the thickness of the heating substrate 3 is t. Since t is small compared with A, the heat flowing from the back surface of the heating film 7 into the bottom surface of the heating substrate 3 can be regarded as flowing vertically into the heating substrate 3. Therefore, the following formula is established. In the formula, k is the thermal conductivity of the heating substrate 3.

WB =A‧k‧(T1 -T3 )/t   (式6)W B =A‧k‧(T 1 -T 3 )/t (Equation 6)

如前述,T1 可從加熱薄膜7之電阻值算出。但是,T3 不能直接使用感測薄膜9之測定值,乃因感測薄膜9並不位於加熱薄膜7正下方(此種配置係為了避免加熱薄膜7之供電端子8與感測薄膜9干涉)。As described above, T 1 can be calculated from the resistance value of the heating film 7. However, T 3 cannot directly use the measured value of the sensing film 9 because the sensing film 9 is not located directly under the heating film 7 (this configuration is to prevent the power supply terminal 8 of the heating film 7 from interfering with the sensing film 9) .

另外,根據設於加熱基板3底面之9個感測薄膜9之測定值估計加熱基板3底面之溫度分佈,求得位於加熱薄膜7正下方之加熱基板3底面之溫度,即T3Further, the temperature distribution of the bottom surface of the heating substrate 3 is estimated based on the measured values of the nine sensing films 9 provided on the bottom surface of the heating substrate 3, and the temperature of the bottom surface of the heating substrate 3 directly under the heating film 7 is obtained, that is, T 3 .

若相對於預設之溫度分佈適當配置加熱薄膜7,則鄰接感測薄膜9之間的點之溫度,可視為對應於與一側感測薄膜9相隔之距離之線性變匕而求出。另外,在本實施形態中,由於感測薄膜9未相對於加熱基板3均等分佈,故在離開感測薄膜9之部位之溫度估計精度會有問題,然而,由於加熱薄膜7係配置於加熱基板3之 中央附近,故可認為加熱基板3底面之溫度關於加熱基板3之中心對稱分佈。因此,如第6圖所示,可認為部位A~D之溫度與設於部位A'~D'之感測薄膜9之測定值相等,可作出等溫線圖。When the heating film 7 is appropriately disposed with respect to the preset temperature distribution, the temperature of the point between the adjacent sensing films 9 can be determined as a linear change corresponding to the distance from the one sensing film 9. Further, in the present embodiment, since the sensing film 9 is not uniformly distributed with respect to the heating substrate 3, the temperature estimation accuracy at the portion away from the sensing film 9 may be problematic, however, the heating film 7 is disposed on the heating substrate. 3 In the vicinity of the center, it is considered that the temperature of the bottom surface of the heating substrate 3 is symmetrically distributed with respect to the center of the heating substrate 3. Therefore, as shown in Fig. 6, it can be considered that the temperature of the portions A to D is equal to the measured value of the sensing film 9 provided at the portions A' to D', and an isotherm diagram can be made.

根據如此得到之加熱基板3底面之溫度分佈,若設加熱薄膜7正下方之加熱基板3底面之溫度為T3 ,則可由式6求得WBAccording to the temperature distribution of the bottom surface of the substrate 3 thus obtained, if the temperature of the bottom surface of the heating substrate 3 directly under the heating film 7 is T 3 , W B can be obtained by Equation 6.

[量測裝置][Measuring device]

下文說明一種使用加熱裝置1自動量測附熱管冷卻器2之總熱阻RT 或工作熱阻RW 之量測裝置21。A measuring device 21 for automatically measuring the total thermal resistance R T or the working thermal resistance R W of the heat pipe cooler 2 using the heating device 1 will be described below.

第7圖係為表示量測裝置21之概念結構之結構圖。如第7圖所示,量測裝置21係由加熱裝置1、控制裝置22、電力控制裝置23、感測控制裝置24及溫度感測器25、26構成。Fig. 7 is a structural view showing the conceptual structure of the measuring device 21. As shown in Fig. 7, the measuring device 21 is composed of a heating device 1, a control device 22, a power control device 23, a sensing control device 24, and temperature sensors 25, 26.

控制裝置22係為一支配整個量測裝置21之電腦,電力控制裝置23及感測控制裝置24則接受控制裝置22之指令而工作。The control device 22 is a computer equipped with the entire measuring device 21, and the power control device 23 and the sensing control device 24 are operated by the command of the control device 22.

電力控制裝置23係為用以按照控制裝置22之指令,供給加熱裝置1之加熱薄膜7預定電力之裝置。The power control device 23 is a device for supplying predetermined power to the heating film 7 of the heating device 1 in accordance with an instruction from the control device 22.

感測控制裝置24係按照控制裝置22之指令來測定感測薄膜9之感測端子14間之電阻,而算出感測薄膜9之溫度。另外,感測控制裝置24係按照控制裝置22之指令來測定加熱薄膜7之供電端子8間之電阻,而算出加熱薄膜7之溫度。The sensing control device 24 measures the resistance between the sensing terminals 14 of the sensing film 9 in accordance with an instruction from the control device 22, and calculates the temperature of the sensing film 9. Further, the sensing control device 24 measures the electric resistance between the power supply terminals 8 of the heating film 7 in accordance with an instruction from the control device 22, and calculates the temperature of the heating film 7.

溫度感測器25係為用以檢出外部環境(附熱管冷卻器2放熱之空間)溫度之感測器。另外,溫度感測器26係為用以檢出附熱管冷卻器2之放熱部(散熱片6)之表面溫度之感測器。The temperature sensor 25 is a sensor for detecting the temperature of the external environment (the space in which the heat pipe cooler 2 is radiated). Further, the temperature sensor 26 is a sensor for detecting the surface temperature of the heat radiating portion (heat sink 6) of the heat pipe cooler 2.

[控制程式][control program]

控制裝置22中裝有控制程式,控制裝置22係按控制程式來操作電力控制裝置23等,並進行自動量測。第8圖表示在控制裝置22上執行之一控制程式實例之流程。以下,按圖上所附之步驟編號依次說明該控制程式。The control device 22 is provided with a control program, and the control device 22 operates the power control device 23 and the like according to the control program, and performs automatic measurement. Figure 8 shows the flow of executing one of the control program instances on the control device 22. Hereinafter, the control program will be described in order according to the step numbers attached to the drawings.

(步驟1)電力控制裝置23供給加熱薄膜7預定電力而開始加熱。如前述,例如給5個加熱薄膜7中之一部分供電,以模擬一發熱部位不均之IC晶片;(步驟2)加熱開始後,感測控制裝置24測定加熱薄膜7之供電端子8間之電阻並監視加熱薄膜7之溫度T1 之變化,直至達到無變化狀態(穩定狀態)為止。達到無變化狀態後即進入步驟3;(步驟3)使感測控制裝置24算出感測薄膜9之溫度,並根據其結果,估計加熱基板3底面之溫度分佈,並求出加熱薄膜7正下方之加熱基板3底面之溫度T3 ;(步驟4)根據T1 及T3 ,求出單位時間內從加熱基板3底面流出之熱量WB ;(步驟5)根據電力控制裝置23供給加熱薄膜7之電力,求出單位時間內加熱薄膜7上所產生之熱量WP ;(步驟6)根據WB 及WP ,求出單位時間內附熱管冷卻器2所輸送(放熱)之熱量WF ;(步驟7)根據溫度感測器25所檢出之外部環境溫度T2 及T1 、WF ,求出附熱管冷卻器2之總熱阻RT(Step 1) The power control device 23 supplies the heating film 7 with predetermined electric power to start heating. As described above, for example, one of the five heating films 7 is supplied with power to simulate an IC chip having uneven heat generation portions; (Step 2) After the heating is started, the sensing control device 24 determines the resistance between the power supply terminals 8 of the heating film 7. The change in the temperature T 1 of the heating film 7 is monitored until the non-changing state (stable state) is reached. When the state of no change is reached, the process proceeds to step 3; (step 3) the sensing control device 24 calculates the temperature of the sensing film 9, and based on the result, estimates the temperature distribution of the bottom surface of the heating substrate 3, and finds the heating film 7 directly below. 3 the bottom surface temperature T 3 of the heated substrate; (step 4) the T 1 and T 3, calculated from the amount of heat per unit time of heating the substrate W B 3 effluent bottom surface; a supply (step 5) the power control device 23 heating the film 7 The electric power is used to obtain the heat W P generated on the heating film 7 per unit time; (Step 6), according to W B and W P , the heat W F delivered (heat release) by the heat pipe cooler 2 per unit time is obtained; (Step 7) The total thermal resistance R T of the heat pipe cooler 2 is obtained from the external environmental temperatures T 2 and T 1 and W F detected by the temperature sensor 25.

此外,若於步驟7中以溫度感測器26所檢出之附熱管冷卻器2之放熱部(散熱片6)表面溫度T'2 取代T2 ,則可算出附熱管冷卻器 2之工作熱阻RWIn addition, if the surface temperature T' 2 of the heat radiating portion (heat sink 6) of the heat pipe cooler 2 detected by the temperature sensor 26 is replaced by T 2 in step 7, the working heat of the heat pipe cooler 2 can be calculated. Resistance R W .

[評價傳熱機器單體之效能][Evaluation of the efficiency of heat transfer machine units]

上文係說明使用設有加熱裝置1之量測裝置21來量測附熱管冷卻器2之熱阻之步驟。熱阻係評價傳熱機器裝於特定熱源時之傳熱效能之有效指標。The above description illustrates the step of measuring the thermal resistance of the heat pipe cooler 2 using the measuring device 21 provided with the heating device 1. The thermal resistance is an effective indicator for evaluating the heat transfer performance of a heat transfer machine when it is installed in a specific heat source.

然,根據發明人之實驗,2x7mm大小之平面加熱器(熱源1)與附熱管冷卻器2組合時之工作熱阻RW 係為0.35 (K/W),而3x5mm大小之平面加熱器(熱源2)與附熱管冷卻器2組合時之工作熱阻RW 係為0.80 (K/W)。因此,由於熱阻因熱源大小及形狀而變化,故存在難以用作傳熱機器單體傳熱效能評價指標之問題。However, according to the experiments of the inventors, the working thermal resistance R W of the 2x7 mm planar heater (heat source 1) combined with the heat pipe cooler 2 is 0.35 (K/W), and the 3x5 mm planar heater (heat source) 2) The working thermal resistance R W when combined with the heat pipe cooler 2 is 0.80 (K/W). Therefore, since the thermal resistance varies depending on the size and shape of the heat source, there is a problem that it is difficult to be used as an evaluation index of the heat transfer efficiency of the heat transfer machine.

因此,發明人考量用量測裝置21來估計傳熱機器之有效導熱率,同時用有效導熱率來評價傳熱機器單體之傳熱效能。以下說明:於熱源上設置傳熱機器,根據熱源之發熱量與傳熱機器之傳熱量達到平衡從而使熱源溫度達到穩定時之熱源溫度,估計傳熱機器之有效導熱率之方法;以及使用有效導熱率作為附熱管冷卻器2單體之傳熱效能之評價指標之優越性。Therefore, the inventors considered the measuring device 21 to estimate the effective thermal conductivity of the heat transfer machine while using the effective thermal conductivity to evaluate the heat transfer efficiency of the heat transfer machine unit. The following is a method for setting a heat transfer machine on a heat source, estimating the effective heat conductivity of the heat transfer machine according to the heat source of the heat source and the heat transfer amount of the heat transfer machine to balance the heat source temperature, and estimating the effective heat transfer rate of the heat transfer machine; The thermal conductivity is superior to the evaluation index of the heat transfer efficiency of the heat pipe cooler 2 alone.

[決定熱傳導方程式之邊界條件][Determining the boundary conditions of the heat transfer equation]

將導熱率已知之物體置於熱源上,其上設置傳熱機器,為計算熱源之發熱量與傳熱機器之傳熱量平衡時之溫度(穩定溫度),用如下步驟決定熱傳導方程式之邊界條件:(1)將導熱率已知之放熱體(例如銅板)置於熱源上,在該熱源之溫度達到穩定時,量測該放熱體之溫度分佈(例如,使用紅外線 溫度記錄儀);(2)針對該放熱體和該熱源建立三元熱傳導方程式,並用有限體積法求解;(3)比較(1)之量測值和(2)之計算值,決定使二者一致之三元熱傳導方程式之邊界條件(該放熱體和該熱源間之高溫脂之厚度、該放熱體上面之傳熱係數)。An object having a known thermal conductivity is placed on a heat source, and a heat transfer machine is disposed thereon. To calculate the temperature (steady temperature) at which the heat generation of the heat source is balanced with the heat transfer amount of the heat transfer machine, the following steps are used to determine the boundary conditions of the heat transfer equation: (1) placing an exothermic body (for example, a copper plate) having a known thermal conductivity on a heat source, and measuring the temperature distribution of the exothermic body when the temperature of the heat source is stabilized (for example, using infrared rays) (2) establish a ternary heat conduction equation for the exothermic body and the heat source, and solve it by a finite volume method; (3) compare the measured value of (1) with the calculated value of (2), and decide to make the two The boundary condition of the uniform ternary heat conduction equation (the thickness of the high temperature grease between the exotherm and the heat source, and the heat transfer coefficient above the exotherm).

[決定導熱率與熱源穩定溫度之關係式][Determining the relationship between thermal conductivity and heat source stable temperature]

在使用上述方法決定邊界條件之同時,將該放熱體之導熱率進行種種改變,求解該三元熱傳導方程式,並計算該熱源相應於各該放熱體導熱率之穩定溫度。While determining the boundary condition by using the above method, the thermal conductivity of the exothermic body is variously changed, the ternary heat conduction equation is solved, and the stable temperature of the heat source corresponding to the thermal conductivity of each of the exotherms is calculated.

發明人用上述方法決定了關於該熱源1及該熱源2之熱傳導方程式之邊界條件,並計算了導熱率與穩定溫度之關係,並取該放熱體之導熱率為橫軸、取該熱源1及該熱源2之穩定溫度為縱軸進行座標圖標繪,得到第9圖所示之結果。The inventor determines the boundary conditions of the heat conduction equation of the heat source 1 and the heat source 2 by the above method, and calculates the relationship between the thermal conductivity and the stable temperature, and takes the thermal conductivity of the heat radiating body as the horizontal axis, and takes the heat source 1 and The stable temperature of the heat source 2 is plotted on the vertical axis, and the result shown in Fig. 9 is obtained.

此處,設該熱源1或該熱源2之穩定溫度為Y、該放熱體之導熱率為X,將二者之關係用下式近似表達: Here, it is assumed that the stable temperature of the heat source 1 or the heat source 2 is Y, and the thermal conductivity of the heat radiator is X, and the relationship between the two is approximated by the following formula:

為使導熱率X與穩定溫度Y之相關係數成為最大,選擇式7之常數,結果得到以下各值。In order to maximize the correlation coefficient between the thermal conductivity X and the stable temperature Y, the constant of Equation 7 is selected, and as a result, the following values are obtained.

即,對於該熱源1: That is, for this heat source 1:

對於該熱源2: For this heat source 2:

此外,第9圖所示曲線係在式7中代入式8或式9所示值後所得之曲線。Further, the curve shown in Fig. 9 is a curve obtained by substituting the value shown in Formula 8 or Formula 9 in Formula 7.

[估計傳熱機器之有效導熱率][Estimating the effective thermal conductivity of heat transfer machines]

從式7得到下式。The following formula is obtained from the formula 7.

將附熱管冷卻器2置於上述熱源1及上述熱源2上,在求該熱源1及該熱源2之穩定溫度時得到349.4(K)與350.6(K)。將該等值連同式8與式9代入式10,以求出附熱管冷卻器2之有效導熱率X,結果得到如下之值。The heat pipe cooler 2 is placed on the heat source 1 and the heat source 2 described above, and 349.4 (K) and 350.6 (K) are obtained when the heat source 1 and the heat source 2 are at a stable temperature. This equivalent value is substituted into Equation 10 together with Equations 8 and 9, to determine the effective thermal conductivity X of the heat pipe cooler 2, and as a result, the following values are obtained.

即,對於該熱源1: That is, for this heat source 1:

對於該熱源2: For this heat source 2:

如此,不管係用該熱源1還是用該熱源2量測附熱管冷卻器2之有效導熱率,其結果幾無差別。由此可知,有效導熱率X係附熱管冷卻器2所固有之傳熱效能指標,不受熱源大小或尺寸之影響。Thus, regardless of whether the heat source 1 is used or the effective heat conductivity of the attached heat pipe cooler 2 is measured by the heat source 2, the results are almost indistinguishable. It can be seen that the effective heat conductivity X is an inherent heat transfer performance index of the heat pipe cooler 2, and is not affected by the size or size of the heat source.

因此,於加熱裝置1上放置導熱率已知之放熱體,量測加熱裝置1達到穩定溫度時該放熱體之溫度分佈,即可決定加熱裝置1之穩定溫度和置於加熱裝置1上之物體之導熱率之關係式。另外,若能對於加熱裝置1決定該關係式,則僅藉由量測加熱裝置1之穩定溫度,便可估計上述物體之有效導熱率。Therefore, a heat radiating body having a known thermal conductivity is placed on the heating device 1, and the temperature distribution of the heat radiating body when the heating device 1 reaches a stable temperature is measured, thereby determining the stable temperature of the heating device 1 and the object placed on the heating device 1. The relationship between thermal conductivity. Further, if the relationship can be determined for the heating device 1, the effective thermal conductivity of the object can be estimated only by measuring the stable temperature of the heating device 1.

上文係說明用於測定附熱管冷卻器傳熱特性之本發明實例,但 本發明之適用範圍並不以此為限。本發明可廣泛適用於測定各種傳熱機器之傳熱特性。The foregoing is an example of the invention for determining the heat transfer characteristics of an attached heat pipe cooler, but The scope of application of the present invention is not limited thereto. The invention is broadly applicable to the determination of heat transfer characteristics of various heat transfer machines.

【產業上之利用可能性】[Industrial use possibilities]

本發明之裝置及方法可用於測定各種傳熱機器之傳熱特性。The apparatus and method of the present invention can be used to determine the heat transfer characteristics of various heat transfer machines.

1‧‧‧加熱裝置1‧‧‧heating device

2‧‧‧附熱管冷卻器2‧‧‧With heat pipe cooler

3‧‧‧加熱基板3‧‧‧heating the substrate

4‧‧‧安裝基板4‧‧‧Installation substrate

5‧‧‧熱管5‧‧‧heat pipe

6‧‧‧散熱片6‧‧‧ Heat sink

7‧‧‧加熱薄膜7‧‧‧heated film

8‧‧‧供電端子8‧‧‧Power supply terminal

9‧‧‧感測薄膜9‧‧‧Sensing film

10‧‧‧供電用配線薄膜10‧‧‧Power supply wiring film

11‧‧‧感測用配線薄膜11‧‧‧Sensing wiring film

12‧‧‧加熱面12‧‧‧ heating surface

13‧‧‧通孔13‧‧‧through hole

14‧‧‧感測端子14‧‧‧Sensor terminal

15‧‧‧電極墊15‧‧‧electrode pads

16‧‧‧連接墊16‧‧‧Connecting mat

17‧‧‧電極墊17‧‧‧electrode pads

18‧‧‧連接墊18‧‧‧Connecting mat

21‧‧‧量測裝置21‧‧‧Measurement device

22‧‧‧控制裝置22‧‧‧Control device

23‧‧‧電力控制裝置23‧‧‧Power control unit

24‧‧‧感測控制裝置24‧‧‧Sensing control device

25‧‧‧溫度感測器25‧‧‧ Temperature Sensor

26‧‧‧溫度感測器26‧‧‧Temperature Sensor

第1圖係為表示本發明加熱裝置之概念結構之側面圖;第2圖係為該加熱裝置之加熱基板之外形圖,其中(a)係為其表面之平面圖、(b)係為設有加熱薄膜之部位之放大圖、(c)係為局部剖面圖;第3圖係為表示該加熱裝置之加熱基板底面之平面圖,其中(a)係為總體圖、(b)係為感測薄膜之放大圖;第4圖係為表示該加熱裝置之安裝基板表面之平面圖,其中(a)係為單體圖、(b)表示搭載有加熱基板之狀態;第5圖係為例示用加熱裝置測定附熱管冷卻器總熱阻之原理之示意圖;第6圖係為加熱基板底面之等溫線圖之一實例;第7圖係為表示本發明量測裝置之概念結構之結構圖;第8圖係為表示在該檢査裝置上執行之程式之實例之流程圖;以及第9圖係為表示放熱體之導熱率與熱源之穩定溫度之關係圖。1 is a side view showing a conceptual structure of a heating device of the present invention; and FIG. 2 is a view showing a heating substrate of the heating device, wherein (a) is a plan view of the surface thereof, and (b) is provided with An enlarged view of a portion where the film is heated, (c) is a partial cross-sectional view; and a third view is a plan view showing a bottom surface of the heating substrate of the heating device, wherein (a) is a general view and (b) is a sensing film Fig. 4 is a plan view showing the surface of the mounting substrate of the heating device, wherein (a) is a single figure, (b) is a state in which a heating substrate is mounted, and Fig. 5 is a heating device exemplified. A schematic diagram for determining the principle of the total thermal resistance of the heat pipe cooler; FIG. 6 is an example of an isotherm diagram for heating the bottom surface of the substrate; and FIG. 7 is a structural diagram showing the conceptual structure of the measuring device of the present invention; The figure is a flow chart showing an example of a program executed on the inspection apparatus; and the figure 9 is a diagram showing the relationship between the thermal conductivity of the heat radiator and the stable temperature of the heat source.

1‧‧‧加熱裝置1‧‧‧heating device

2‧‧‧附熱管冷卻器2‧‧‧With heat pipe cooler

3‧‧‧加熱基板3‧‧‧heating the substrate

4‧‧‧安裝基板4‧‧‧Installation substrate

5‧‧‧熱管5‧‧‧heat pipe

6‧‧‧散熱片6‧‧‧ Heat sink

7‧‧‧加熱薄膜7‧‧‧heated film

8‧‧‧供電端子8‧‧‧Power supply terminal

9‧‧‧感測薄膜9‧‧‧Sensing film

10‧‧‧供電用配線薄膜10‧‧‧Power supply wiring film

11‧‧‧感測用配線薄膜11‧‧‧Sensing wiring film

Claims (11)

一種測定裝置,包含:一加熱裝置,藉由對形成於一基板上之複數個加熱薄膜通電而發熱,包含:該基板;該複數個加熱薄膜;以及複數供電端子,用於對該複數個加熱薄膜分別獨立供電;以及複數個感測薄膜,形成於該基板之底面;以及一控制裝置,該控制裝置具有:一電力控制手段,用於供給該等加熱薄膜預定電力;一感測控制手段,用於量測該等感測薄膜和該等加熱薄膜之溫度;以及一運算手段,用於根據該感測控制手段所量測之該等感測薄膜和該等加熱薄膜之溫度,算出從該基板之底面流出之一流出熱量;其中,該等供電端子形成於該基板之底面,該加熱裝置具有使該等供電端子與該等加熱薄膜電性連接之通孔。 An assay device comprising: a heating device for generating heat by energizing a plurality of heating films formed on a substrate, comprising: the substrate; the plurality of heating films; and a plurality of power supply terminals for heating the plurality of heating electrodes The film is separately powered; and a plurality of sensing films are formed on the bottom surface of the substrate; and a control device having: a power control means for supplying predetermined power to the heating films; and a sensing control means For measuring the temperatures of the sensing films and the heating films; and calculating means for calculating the temperatures of the sensing films and the heating films measured by the sensing control means One of the bottom surfaces of the substrate flows out of the heat; wherein the power supply terminals are formed on the bottom surface of the substrate, and the heating device has a through hole for electrically connecting the power supply terminals to the heating films. 如請求項1所述之測定裝置,其中該運算手段係根據該感測控制手段所量測之該等感測薄膜之溫度,而算出該基板之底面之一溫度分佈。 The measuring device according to claim 1, wherein the calculating means calculates a temperature distribution of a bottom surface of the substrate based on the temperature of the sensing film measured by the sensing control means. 如請求項1所述之測定裝置,其中該運算手段係根據該電力控制手段供給該等加熱薄膜之電力,而算出由該等加熱薄膜 產生之一發熱量。 The measuring device according to claim 1, wherein the calculating means calculates the electric power of the heating film according to the electric power control means, and calculates the heating film Produces one of the calories. 如請求項3所述之測定裝置,其中該運算手段係從由該等加熱薄膜產生之發熱量中,減去從該基板之底面流出之流出熱量,算出從該等加熱薄膜之上面所放出之一放出熱量。 The measuring device according to claim 3, wherein the calculating means subtracts the heat of outflow from the bottom surface of the substrate from the heat generated by the heating film, and calculates the discharge from the upper surface of the heating film. One releases heat. 如請求項4所述之測定裝置,更包含測定該測定裝置之周圍環境溫度之一環境溫度測定手段,其中該運算手段係根據該環境溫度測定手段所檢出之溫度、該感測控制手段所量測之該等加熱薄膜之溫度、以及從該等加熱薄膜之上面所放出之放出熱量,算出設置於該等加熱薄膜上之一測試體之一熱阻。 The measuring device according to claim 4, further comprising an environmental temperature measuring means for measuring an ambient temperature of the measuring device, wherein the calculating means is based on a temperature detected by the ambient temperature measuring means, and the sensing control means The temperature of the heated film and the heat released from the upper surface of the heated film were measured to calculate the thermal resistance of one of the test bodies disposed on the heated film. 如請求項4所述之測定裝置,更包含一放熱部溫度測定手段,用於測定設置於該等加熱薄膜上之測試體之一放熱部之一表面溫度,其中該運算手段係根據該放熱部溫度測定手段所檢出之溫度、該感測控制手段所量測之該等加熱薄膜之溫度及從該等加熱薄膜上面放出之放出熱量,算出該測試體之一熱阻。 The measuring device according to claim 4, further comprising a heat releasing portion temperature measuring means for measuring a surface temperature of one of the heat radiating portions of the test body disposed on the heating film, wherein the calculating means is based on the heat radiating portion The temperature detected by the temperature measuring means, the temperature of the heating film measured by the sensing control means, and the heat released from the heating film, calculate the thermal resistance of the test piece. 如請求項5或請求項6所述之測定裝置,更包含一溫度監測手段,用於監測該感測控制手段所量測之該等加熱薄膜之溫度之時間變化,其中該運算手段在該等加熱薄膜之溫度無時間變化時,算出該測試體之熱阻。 The measuring device according to claim 5 or claim 6, further comprising a temperature monitoring means for monitoring a time change of a temperature of the heating film measured by the sensing control means, wherein the computing means is When the temperature of the heated film did not change with time, the thermal resistance of the test body was calculated. 如請求項1所述之測定裝置,其中該加熱裝置更具有一安裝基板,其上形成有將該等加熱薄膜和該等感測薄膜與一外部機器電性連接之一配線圖案。 The measuring device according to claim 1, wherein the heating device further comprises a mounting substrate on which a wiring pattern for electrically connecting the heating film and the sensing film to an external device is formed. 如請求項8所述之測定裝置,其中該配線圖案具有複數條供 電線路,與該等供電端子接觸之始端與位於該安裝基板之一邊緣部且與該外部機器連接之一終端連通,且該複數條供電線路之長度全部相等。 The measuring device according to claim 8, wherein the wiring pattern has a plurality of strips The electrical circuit has a starting end in contact with the power supply terminals and is connected to a terminal located at one edge of the mounting substrate and connected to the external device, and the lengths of the plurality of power supply lines are all equal. 一種導熱率估計方法,包括下列步驟:一預備量測步驟,將一導熱率已知之放熱體,設置於一熱源上,在該熱源之一發熱量與一放熱量達到均衡,而該熱源之一溫度達到一定之穩定狀態下,量測該放熱體之一溫度分佈;一計算步驟,求解關於該放熱體和該熱源之一熱傳導方程式,計算在該熱源之發熱量和放熱量達到均衡且該熱源之溫度達到一定之穩定狀態下該放熱體之一溫度分佈;一邊界條件決定步驟,比較該預備量測步驟所得到之溫度分佈和該計算步驟所得到之溫度分佈,決定使二者達到一致之該熱傳導方程式之一邊界條件;一穩定溫度估計步驟,代入該放熱體之導熱率,求解利用由該邊界條件決定步驟所決定之邊界條件之該熱傳導方程式,估計該熱源之發熱量和放熱量達到均衡且該熱源之溫度達到一定之穩定狀態下之該熱源之溫度;一近似式決定步驟,根據該穩定溫度估計步驟所得到之該放熱體之導熱率與該熱源溫度之關係,決定表示二者關係之近似式;一測試體量測步驟,將一測試體設置於該熱源上,量測該熱源之發熱量與放熱量達到均衡且該熱源之溫度達到一定 時該熱源之溫度;以及一導熱率估計步驟,根據該測試體量測步驟所得到之該熱源之溫度和該近似式決定步驟所得到之近似式,求出該測試體之導熱率。 A method for estimating thermal conductivity includes the following steps: a preliminary measuring step of disposing a heat-dissipating body having a known thermal conductivity on a heat source, wherein one of the heat source and the heat-dissipating heat are equalized, and one of the heat sources When the temperature reaches a certain steady state, measuring a temperature distribution of the heat radiator; a calculation step of solving a heat conduction equation about the heat radiator and the heat source, calculating a heat generation and a heat release amount of the heat source to achieve equilibrium and the heat source The temperature reaches a certain temperature state of the exothermic body; a boundary condition determining step, comparing the temperature distribution obtained by the preliminary measuring step and the temperature distribution obtained by the calculating step, determining that the two are consistent a boundary condition of the heat conduction equation; a stable temperature estimation step, substituting the thermal conductivity of the heat release body, and solving the heat conduction equation determined by the boundary condition determined by the boundary condition determining step, and estimating the heat generation amount and the heat release amount of the heat source Equilibrium and the temperature of the heat source reaches a certain steady state of the temperature of the heat source; an approximation a step of determining an approximate expression indicating a relationship between the thermal conductivity of the exothermic body obtained by the stable temperature estimating step and the temperature of the heat source; and a test body measuring step of setting a test body to the heat source Measuring the heat generation and the heat release amount of the heat source to be equalized and the temperature of the heat source reaches a certain temperature The temperature of the heat source; and a thermal conductivity estimating step, determining the thermal conductivity of the test body according to the temperature of the heat source obtained by the test body measuring step and the approximate expression obtained by the approximated determining step. 如請求項10所述之導熱率估計方法,其中該熱源係為一加熱裝置,包含:一基板;複數個加熱薄膜;以及複數供電端子,用於對該複數個加熱薄膜分別獨立供電。 The method of estimating thermal conductivity according to claim 10, wherein the heat source is a heating device comprising: a substrate; a plurality of heating films; and a plurality of power supply terminals for independently supplying power to the plurality of heating films.
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