CN111736052B - Probe card, wafer detection equipment with probe card and bare chip test process using probe card - Google Patents
Probe card, wafer detection equipment with probe card and bare chip test process using probe card Download PDFInfo
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- CN111736052B CN111736052B CN201910738260.1A CN201910738260A CN111736052B CN 111736052 B CN111736052 B CN 111736052B CN 201910738260 A CN201910738260 A CN 201910738260A CN 111736052 B CN111736052 B CN 111736052B
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- wafer
- probe card
- temperature
- wafer chuck
- temperature sensing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
Abstract
The invention provides a probe card, wafer detection equipment with the probe card and a bare chip testing process using the probe card. The circuit board is electrically connected with the probes. A temperature sensing device thermally coupled to at least one of the plurality of probes.
Description
Technical Field
The present invention relates to an electronic device and a testing process, and more particularly, to a probe card, a wafer inspection device having the same, and a bare die testing process using the same
Background
A Chip Probe (CP) test is an important test for verifying the yield of a semiconductor wafer after the wafer is manufactured and before the wafer is packaged. In the process of die testing, if the environmental temperature is to be adjusted, the test wafer and the inspection equipment are generally placed in a constant temperature chamber for testing, and temperature measurements are performed on five points on a wafer chuck (wafer chuck) corresponding to the upper, lower, left, right, and middle of the wafer.
Disclosure of Invention
The invention provides a probe card which can improve the response of temperature sensing.
The invention provides a wafer detection device and a bare chip test process, which can quickly and accurately measure and adjust the temperature of a chip area under circuit test.
The probe card of the invention comprises a plurality of probes, a circuit board and at least one temperature sensing device. The circuit board is electrically connected with the probes. A temperature sensing device thermally coupled to at least one of the plurality of probes.
In an embodiment of the present invention, the circuit board includes at least one hot junction and a testing element. At least one temperature sensing device thermally coupled to at least one of the plurality of probes via at least one hot junction; and at least one of the plurality of probes is electrically connected to the test element through at least one hot junction.
In one embodiment of the present invention, the temperature sensing device includes a thermal conductive insulator and a thermocouple. The thermal conductive insulator is coupled to at least one hot junction on the circuit board. The thermocouple is coupled to the heat conducting insulator and electrically separated from at least one hot junction on the circuit board.
In an embodiment of the invention, the probe card further includes a thermal insulation paste. The heat-insulating glue at least coats the heat-conducting insulator.
In an embodiment of the invention, the at least one temperature sensing device is a plurality of temperature sensing devices, and the at least one hot junction is a plurality of hot junctions. The plurality of temperature sensing devices are thermally coupled to the corresponding plurality of probes via the corresponding plurality of hot junctions, and the plurality of hot junctions are electrically separated from each other.
Based on the above, the probe card of the present invention may have a temperature sensing device. Therefore, circuit testing and temperature sensing can be performed through the probe card. And, the response of temperature sensing can be improved.
The wafer detection equipment is suitable for carrying out bare chip test on the wafer. The wafer detection equipment comprises a wafer chuck, a temperature control device, a temperature sensor, the probe card and a control unit. The wafer chuck has a support surface adapted to support a wafer. The temperature control device is thermally coupled to the wafer chuck. The temperature sensor is thermally coupled to the wafer chuck. The control unit is electrically connected to the temperature control device, the temperature sensor and the probe card.
In an embodiment of the present invention, the temperature control device includes a heating unit and a cooling unit.
In one embodiment of the present invention, the cooling unit includes a cooling pipe embedded in the wafer chuck and communicating with the cooler.
The bare chip testing process comprises the following steps. The wafer inspection apparatus is provided. A wafer is placed on a support surface of a wafer chuck, wherein the wafer includes a plurality of test pads. And contacting the probes of the probe card with the corresponding test pads to perform circuit detection on the wafer chuck.
In an embodiment of the invention, the die testing process further includes the following steps. And controlling the temperature of the wafer on the wafer chuck by the temperature control device.
In one embodiment of the present invention, the step of controlling the temperature of the wafer on the wafer chuck comprises: the temperature of the wafer on the wafer chuck is measured by at least one temperature sensing device or temperature sensor of the probe card, so that the control unit controls the temperature of the wafer on the wafer chuck through the temperature control device.
In one embodiment of the present invention, if a circuit inspection is performed on a wafer chuck, a temperature of the wafer on the wafer chuck is measured at least by at least one temperature sensing device of a probe card; and if the wafer on the wafer chuck is not subjected to circuit detection, measuring the temperature of the wafer on the wafer chuck through at least the temperature sensor.
Based on the above, the probe card included in the wafer inspection apparatus of the present invention may have a temperature sensing device. Therefore, when the wafer detection equipment provided by the invention is used for carrying out circuit detection on the wafer, the response of temperature sensing can be improved. In addition, when the wafer is subjected to bare chip test, the probe card can be used for carrying out circuit test and temperature sensing on the same chip area. Therefore, the temperature of the wafer can be adjusted according to the temperature of the chip area under circuit test. Therefore, the temperature measurement and adjustment of the chip area under circuit test can be more rapid and accurate.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIGS. 1A to 1C are schematic side views illustrating a part of a manufacturing method of a probe card according to a first embodiment of the invention;
FIG. 2A is a schematic side view of a probe card according to a first embodiment of the present invention;
FIG. 2B is a schematic diagram of the circuit and heat transfer paths of a probe card according to a first embodiment of the invention;
FIG. 3 is a schematic diagram of the circuit and the heat transfer path of a probe card according to a second embodiment of the present invention;
FIG. 4A is a schematic side view of a wafer inspection apparatus according to an embodiment of the invention;
FIGS. 4B and 4C illustrate a die testing flow chart according to an embodiment of the invention;
fig. 5 shows a simulation diagram of wafer temperature distribution during a die test of a high power wafer product.
Description of the reference numerals
100. 200: probe card
110. 210: probe needle
120: circuit board
121. 221: hot junction
122: test element
130. 230: temperature sensing device
131: heat conductive insulator
131a: first side
131b: second side
132. 133: easy welding layer
135: thermocouple
135a, 135b: conductor
135c: voltage meter
140: heat-insulating glue
150: conducting wire
300: wafer or chip
310: test pad
400: wafer detection equipment
410: wafer chuck
411: support surface
420: temperature control device
421: heating unit
422: cooling unit
422a: cooling device
422b: cooling pipe
430: temperature sensor
440: control unit
450: signal line
500: wafer
510: chip region
520: test pad
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings of the present embodiments. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The thickness of layers and regions in the drawings may be exaggerated for clarity. The same or similar reference numbers refer to the same or similar elements, and the following paragraphs will not be repeated. In addition, directional terms mentioned in the embodiments, such as: up, down, left, right, front or rear, etc., are directions with reference to the attached drawings only. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
Fig. 1A to 1C are schematic side views illustrating a partial manufacturing method of a probe card according to a first embodiment of the present invention. In fig. 1A to 1C, a part of the mold layer or member is omitted for clarity.
Referring to fig. 1A, a circuit board 120 is provided. The circuit board 120 may include a thermal junction 121 and a test element 122. In fig. 1A, only one hot junction 121 and one test element 122 are exemplarily shown, but the present invention does not impose a limitation on the number of the hot junctions 121 to measure the number of the test elements 122.
In the present embodiment, the thermal contact 121 is, for example, a bonding pad, and the bonding pad serving as the thermal contact 121 can be electrically connected to the testing device 122.
In the present embodiment, the test device 122 may include active devices (e.g., transistors), passive devices (e.g., capacitors, resistors, or inductors), or a combination thereof. The type and configuration of the test elements 122 can be adjusted according to design requirements, and the invention is not limited thereto.
With continued reference to fig. 1A, a thermal conductive insulator 131 is provided, and the thermal conductive insulator 131 is coupled to the thermal contact 121 on the circuit board 120. The material of the heat conductive insulator 131 may include, for example, boron Nitride (BN) (e.g., cubic Boron Nitride (cBN)), beryllium oxide (BeO), aluminum oxide (Al oxide, al) 2 O 3 ) Or other suitable high thermal conductivity insulating material. For example, the high thermal conductivity insulating material may have a resistivity greater than 1.0 × 10 8 Ohm meter (omega. M), and the thermal conductivity of the high thermal conductivity insulating material can be more than 100 watt meters -1 Kelvin -1 (W/mK), but the present invention is not limited thereto.
In this embodiment, the thermal conductive insulator 131 may be plated with an easy soldering layer 132 or an easy soldering layer 133 having high thermal conductivity, so that the thermal conductive insulator 131 may be thermally coupled to other components by soldering (including direct connection or indirect connection). In one embodiment, the thermal conductive insulator 131 may be formed by a thermal conductive sheet (thermal conductive pad), a thermal tape (thermal tape), a thermal grease (thermal grease), or other suitable materials or methods, such that the thermal conductive insulator 131 may be thermally coupled to other components by adhesion.
For example, the thermal conductive insulator 131 may have a first side 131a and a second side 131b opposite to each other. The thermal conductive insulator 131 may have an easy solder layer 132 on a first side 131A (below where the first side 131A is indicated in fig. 1A) and the thermal conductive insulator 131 may have an easy solder layer 133 on a second side 131b. Further, if the heat conductive insulator 131 has the easy-soldering layer 132 and the easy-soldering layer 133 thereon, the easy-soldering layer 132 and the easy-soldering layer 133 can be separated from each other.
Referring to fig. 1B, a thermocouple (thermocouple) 135 is coupled to the thermal conductive insulator 131, and a hot junction 121 connected to the thermal conductive insulator 131 is electrically separated from the thermocouple 135. Thermocouple 135 may include different conductors 135a, 135B (labeled in fig. 2A or fig. 2B). The different conductors 135a, 135b may have different thermal potentials (i.e., the Seebeck Effect) between them at different temperatures. By measuring the difference in thermal potential between the different conductors 135a, 135B with a voltmeter 135c (shown in fig. 2A or fig. 2B), the corresponding temperature can be calculated.
For example, the thermal conductive insulator 131 may be directly connected to the solder mask 132 on the first side 131a thereof, and the solder mask 132 may be directly connected to the thermal contact 121. Also, the thermal conductive insulator 131 may be directly connected to the solder mask 133 on the second side 131b thereof, and the solder mask 133 may be directly connected to the thermocouple 135. As a result, the thermocouple 135, the thermal conductive insulator 131 and the hot junction 121 can be thermally coupled, and the thermocouple 135 and the hot junction 121 can be electrically separated.
It is noted that the present invention does not limit the order in which thermocouple 135 and hot junction 121 are connected to thermal conductive insulator 131. For example, in an embodiment not shown, the thermocouple 135 may be connected to the solder mask 133 on the thermal conductive insulator 131, and then the thermal conductive insulator 131 coupled to the thermocouple 135 may be connected to the hot junction 121 through the solder mask 132 thereon.
Referring to fig. 1C, after the thermocouple 135, the thermal conductive insulator 131 and the hot junction 121 are thermally coupled, the thermal insulation paste 140 covering the thermal conductive insulator 131 may be formed. The material of the thermal insulation paste 140 may include, for example, silicon dioxide or other suitable low thermal conductivity insulating material. For example, the high thermal conductivity insulating material may have a resistivity greater than 1.0 x 10 11 Ohm meter (omega. M), and the thermal conductivity of the low thermal conductivity insulating material can be less than 0.1 watt meter -1 Kelvin -1 (W/mK), but the present invention is not limited thereto.
In the present embodiment, the heat insulation paste 140 may further coat a portion of the thermocouple 135 and a portion of the hot junction 121, but the present invention is not limited thereto.
The probe card 100 of the present embodiment can be manufactured substantially in the above-described manufacturing method.
Referring to fig. 1C, fig. 2A and fig. 2B, fig. 2A is a schematic side view illustrating a usage of a probe card according to a first embodiment of the invention, and fig. 2B is a schematic circuit diagram and a schematic heat transfer path diagram illustrating a usage state of the probe card according to the first embodiment of the invention. In fig. 2A and 2B, a part of the mold layer or member is not shown for clarity. In fig. 2A and 2B, a dotted line (dot line) represents an area where the hot junction 121 may be disposed, and a dashed line (dashed line) represents a thermal coupling between the hot junction 121 and the temperature sensing device 130.
The probe card 100 includes a plurality of probes 110, a circuit board 120, and a temperature sensing device 130. The circuit board 120 is electrically connected to the probe 110. The temperature sensing devices 130 are thermally coupled to the corresponding probes 110. In an exemplary use, as shown in fig. 2A and 2B, the probes 110 of the probe card 100 can be brought into contact with test points (e.g., test pads 320 on a wafer or die 300) so that the probe card 100 or a test apparatus having the probe card 100 can be adapted for circuit testing.
In the present embodiment, the circuit board 120 includes a hot junction 121 and a testing component 122, the temperature sensing device 130 is thermally coupled to the corresponding probe 110 via the hot junction 121, and the probe 110 is electrically connected to the testing component 122 via the hot junction 121. That is, the hot junction 121 is located between the test element 122 and the probe 110 as viewed from the current path.
In the present embodiment, the temperature sensing device 130 includes a thermal conductive insulator 131 and a thermocouple 135. The thermal conductive insulator 131 is coupled to the thermal junction 121 on the circuit board 120. The thermocouple 135 is coupled to the thermal conductive insulator 131, and the thermocouple 135 is electrically separated from the hot junction 121 on the circuit board 120. That is, the thermocouple 135 and the hot junction 121 are electrically separated from each other by the thermal conductive insulator 131. Also, the hot junction 121 is located between the temperature sensing device 130 and the probe 110 in terms of a way of heat conduction (heat conduction/heat dispersion). In this way, circuit testing and temperature sensing can be performed through the probe card 100. Also, interference between the temperature-sensed signal and the circuit-tested signal can be reduced, and a response (response) of the temperature sensing can be improved.
In one embodiment, the thermal junction 121 and the probe 110 may not have other components for testing than the wires 150 for electrically and thermally coupling to each other. Thus, the electrical and thermal conduction efficiency between the hot junction 121 and the probe 110 can be improved.
Fig. 3 is a schematic circuit diagram illustrating a usage state of a probe card 100 according to a second embodiment of the present invention and a heat transfer path. The probe card 200 of the present embodiment is similar to the probe card 100 of the first embodiment, and like components thereof are denoted by the same reference numerals and have like functions, and description thereof is omitted.
In the present embodiment, the probe card 200 includes a plurality of probes 110 and 210, a circuit board 120, and a plurality of temperature sensing devices 130 and 230. The circuit board 120 includes a plurality of thermal contacts 121, 221 and test elements 122, 222. The temperature sensing devices 130 are thermally coupled to the corresponding probes 110 via the corresponding hot junctions 121, and the temperature sensing devices 230 are thermally coupled to the corresponding probes 210 via the corresponding hot junctions 221. Hot junction 121 and hot junction 221 are electrically isolated from each other.
In one embodiment, hot junction 121 and hot junction 221 are thermally separated from each other, but the invention is not limited thereto.
It should be noted that the present invention is not limited to the use of the probe cards 100 and 200. For example, the present invention does not limit the probe card 100, 200 to constitute the wafer inspection apparatus 400 of the subsequent embodiment. That is, the application of the probe card 100, 200 can be adjusted according to the requirement.
Based on the above, the probe card of the present invention may have a temperature sensing device. Therefore, circuit testing and temperature sensing can be performed through the probe card. Also, the response of temperature sensing can be improved.
Fig. 4A is a schematic side view illustrating a usage of the wafer inspecting apparatus according to an embodiment of the invention. Fig. 4B and 4C show a die testing flow chart according to an embodiment of the invention. For clarity, a portion of the film layer or member is omitted from fig. 4A, and a portion of the step is omitted from the flow of fig. 4B and 4C.
In the present embodiment, the probe card configured by the wafer inspection apparatus 400 is the probe card 100 of the first embodiment, and similar components are denoted by the same reference numerals and have similar functions or configurations, so that the description thereof is omitted. It is noted that in other embodiments not shown, the probe card configured may be a probe card similar to probe card 100. For example, in other embodiments not shown, the probe card used by the wafer inspection apparatus 400 may be the same or similar to the probe card 100 of the probe card 200. The probe card 100 will be described as an example.
The wafer inspection apparatus 400 includes a wafer chuck (wafer chuck) 410, a temperature control device 420, a temperature sensor 430, a probe card 100, and a control unit 440. The wafer chuck 410 has a support surface 411 adapted to support the wafer 500. The temperature control device 420 is thermally coupled to the wafer chuck 410. The temperature sensor 430 is thermally coupled to the wafer chuck 410. The probe card 100 is disposed on the supporting surface 411 of the wafer chuck 410, and the probe card 100 and the supporting surface 411 of the wafer chuck 410 have a space therebetween, so that the probes 110 of the probe card 100 can contact with the test pads 520 on the wafer 500, and the wafer 500 placed on the supporting surface 411 can be electrically tested. The parameters (recipe) and contents of the circuit detection can be adjusted according to the design or use requirements, and the invention is not limited thereto.
In this embodiment, the temperature control device 420 may include a heating unit 421 and a cooling unit 422. For example, the heating unit 421 may include a heating resistor, and the cooling unit 422 may include a cooling pipe 422b and a cooler (chiller) 422a containing a cooling fluid, such as water, water including an anti-freezing agent, or a refrigerant, but the present invention is not limited thereto. That is, the temperature control device 420 may correspondingly increase or decrease the temperature of the wafer chuck 410 through the heating unit 421 or the cooling unit 422, so that the temperature of the wafer 500 placed on the support surface 411 may correspondingly increase or decrease. The shape and arrangement of the heating unit 421 or the cooling unit 422 can be adjusted according to design requirements, and the invention is not limited thereto. For example, the cooling pipe 422b may be embedded in the wafer chuck 410, and the cooling pipe 422b may communicate with a cooler 422a outside the wafer chuck 410.
Referring to fig. 4A to 4C, the test flow of the wafer 500 may include the following steps. The wafer inspection apparatus 400 described above is provided. The wafer 500 is placed on the support surface 411 of the wafer chuck 410 of the wafer inspection apparatus 400. Wafer 500 may include a plurality of chip areas (chip areas) 510, and adjacent chip areas 510 may be separated from each other by dicing streets (not shown). Each chip region 510 has a plurality of test pads 520 therein, and the test pads 520 can be electrically connected to the components in the chip region 510. The probes 110 of the probe card 100 of the wafer inspection apparatus 400 are brought into contact with the corresponding test pads 520 of the wafer 500 on the wafer chuck 410 to perform circuit inspection on the chip areas 510 of the wafer 500 on the wafer chuck 410.
In one embodiment, the probes 110 of the probe card 100 may contact the corresponding test pads 520 by the elevation of the wafer chuck 410, but the invention is not limited thereto. In another embodiment, the probes 110 of the probe card 100 may contact corresponding test pads 520 by lowering the probe card 100.
In the present embodiment, after the wafer 500 is placed on the wafer chuck 410, the temperature of the wafer 500 on the wafer chuck 410 may be controlled by the temperature control device 420.
In the present embodiment, when the probes 110 of the probe card 100 do not contact the test pads 520 of the wafer 500 or the wafer 500 on the wafer chuck 410 is not subjected to circuit inspection, the temperature sensor 430 thermally coupled to the wafer chuck 410 senses the temperature of the wafer 500 and transmits data to the control unit 440 through the corresponding signal line 450, so that the control unit 440 can adjust the temperature of the wafer 500 through the temperature control device 420 thermally coupled to the wafer chuck 410.
In the present embodiment, when the probes 110 of the probe card 100 contact the test pads 520 of the wafer 500, or the wafer 500 on the wafer chuck 410 is subjected to circuit inspectionIn the measurement, the temperature of the wafer 500 may be sensed by the temperature sensing device 130 thermally coupled to the probe 110 and data may be transmitted to the control unit 440 via the corresponding signal line 450, so that the control unit 440 may adjust the temperature of the wafer 500 by the temperature control device 420 thermally coupled to the wafer chuck 410. The temperature of the wafer 500 is sensed more rapidly (or nearly instantaneously) by the temperature sensing device 130 thermally coupled to the probe 110 than by the temperature sensor 430 thermally coupled to the wafer chuck 410, and may be closer to the chip area 510 being measured, and thus may be better suited for high power wafer products. The high power wafer product is, for example, a chip with a power of 100 watts (W) or more during operation, or a heat density (heat density) of 25 watts/square centimeter (W/cm) or more during operation 2 ) The chip of (1).
For example, referring to fig. 5, fig. 5 is a graph showing a wafer temperature distribution simulation during a die test of a high power wafer product. Also, in fig. 5, a box located near the center of the wafer is the location of the die (i.e., chip area) being tested. As shown in fig. 5, when the high power wafer product is subjected to the die test, the temperature difference of the wafer may be above 80 ℃. Therefore, the wafer detection equipment and the bare chip testing process of the embodiment of the invention can measure the temperature of the bare chip which is subjected to the circuit test, and can be relatively quick and accurate. That is, compared with performing temperature measurement only on five points of the wafer, namely, the top, the bottom, the left, the right, and the right, or performing averaging according to the temperature measurement results of the five points, the actual temperature of the die to be tested can be relatively close to that of the wafer inspection apparatus and the die testing process according to an embodiment of the present invention.
In one embodiment, when the probes 110 of the probe card 100 contact the test pads 520 of the wafer 500 or the wafer 500 on the wafer chuck 410 is subjected to circuit inspection, the temperature of the wafer 500 may be sensed by the temperature sensors 430 thermally coupled to the wafer chuck 410 and the temperature sensing devices 130 thermally coupled to the probes 110, and the data may be transmitted to the control unit 440 through the corresponding signal lines 450, so that the control unit 440 may adjust the temperature of the wafer 500 through the temperature control devices 420 thermally coupled to the wafer chuck 410.
In one embodiment, if the probe card includes a plurality of temperature sensing devices (e.g., the probe card 200 of the second embodiment includes a plurality of temperature sensing devices 130, 230), after the temperature sensing devices (e.g., the temperature sensing devices 130, 230) transmit data to the control unit 440 via corresponding signal lines 450, the control unit 440 may also perform a corresponding operation (e.g., averaging or weighted averaging) to adjust the temperature of the wafer 500 via the temperature control device 420 thermally coupled to the wafer chuck 410 according to the calculated values.
Based on the above, the probe card included in the wafer inspection apparatus of the present invention may have a temperature sensing device. Therefore, when the wafer detection equipment provided by the invention is used for carrying out circuit detection on the wafer, the response of temperature sensing can be improved. In addition, when the wafer is subjected to bare chip test, the probe card can be used for carrying out circuit test and temperature sensing on the same chip area. Therefore, the temperature of the wafer can be adjusted according to the temperature of the chip area under circuit test. Therefore, the temperature measurement and adjustment of the chip area under circuit test can be more rapid and accurate.
In summary, the probe card of the present invention may have a temperature sensing device. Therefore, when the probe card or the wafer detection equipment provided by the invention is used for carrying out circuit detection on the wafer, the response of temperature sensing can be improved. In addition, when the wafer is subjected to bare chip test, the probe card can be used for carrying out circuit test and temperature sensing on the same chip area. Therefore, the temperature of the wafer can be adjusted according to the temperature of the chip area under circuit test. Therefore, the temperature measurement and adjustment of the chip area under circuit test can be more rapid and accurate.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (10)
1. A probe card, comprising:
a plurality of probes;
the circuit board is electrically connected with the probes and comprises at least one hot junction and a test element; and
at least one temperature sensing device comprising a thermally conductive insulator and a thermocouple, wherein:
the thermocouple is coupled to the thermal conductive insulator, and the thermal conductive insulator is coupled to the at least one hot junction on the circuit board, so that the at least one temperature sensing device is thermally coupled to at least one of the plurality of probes via the at least one hot junction;
at least one of the plurality of probes is electrically connected to the test element through the at least one hot junction; and is provided with
The thermocouple is electrically separated from the at least one hot junction on the circuit board.
2. The probe card of claim 1, further comprising:
and the heat insulation glue at least coats the heat conduction insulator.
3. The probe card of claim 1, wherein:
the at least one temperature sensing device is a plurality of temperature sensing devices;
the at least one hot junction is a plurality of hot junctions;
the plurality of temperature sensing devices are coupled to the corresponding plurality of probes via heat of the corresponding plurality of hot junctions; and is
The plurality of thermal junctions are electrically isolated from each other.
4. A wafer detection device is suitable for bare die testing of a wafer, and comprises:
a wafer chuck having a support surface adapted to support the wafer;
a temperature control device thermally coupled to the wafer chuck;
a temperature sensor thermally coupled to the wafer chuck;
the probe card of claim 1; and
and the control unit is electrically connected with the temperature control device, the temperature sensor and the probe card.
5. The wafer inspection apparatus of claim 4, wherein the temperature control device comprises a heating unit and a cooling unit.
6. The wafer inspection apparatus of claim 5, wherein the cooling unit comprises a cooling tube and a cooler, the cooling tube being embedded within the wafer chuck and in communication with the cooler.
7. A die testing process, comprising:
providing the wafer inspection apparatus of claim 4;
placing the wafer on the support surface of the wafer chuck, wherein the wafer comprises a plurality of test pads; and
and enabling the plurality of probes of the probe card to contact the corresponding plurality of test pads so as to perform circuit detection on the wafer chuck.
8. The die test flow of claim 7, further comprising:
and controlling the temperature of the wafer on the wafer chuck through the temperature control device.
9. The die test flow of claim 8, wherein the step of temperature controlling the wafer on the wafer chuck comprises:
the temperature of the wafer on the wafer chuck is measured through the at least one temperature sensing device or the temperature sensor of the probe card, so that the control unit controls the temperature of the wafer on the wafer chuck through the temperature control device.
10. The die testing process of claim 9, wherein:
if the wafer on the wafer chuck is subjected to circuit detection, measuring the temperature of the wafer on the wafer chuck at least through the at least one temperature sensing device of the probe card; and is provided with
And if the wafer on the wafer chuck is not subjected to circuit detection, measuring the temperature of the wafer on the wafer chuck at least through the temperature sensor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| TW108109827 | 2019-03-21 | ||
| TW108109827A TWI704354B (en) | 2019-03-21 | 2019-03-21 | Probe card, wafer inspection apparatus having the same, and chip probe test flow using the same |
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| CN111736052A CN111736052A (en) | 2020-10-02 |
| CN111736052B true CN111736052B (en) | 2022-10-04 |
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| CN214335132U (en) | 2021-01-13 | 2021-10-01 | 迪科特测试科技(苏州)有限公司 | Detection system and detection device |
| CN116504664A (en) * | 2023-06-28 | 2023-07-28 | 东莞市兆恒机械有限公司 | Wafer detection method, detection device and detection system |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI704354B (en) | 2020-09-11 |
| CN111736052A (en) | 2020-10-02 |
| TW202035992A (en) | 2020-10-01 |
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