CN116504664A - Wafer detection method, detection device and detection system - Google Patents
Wafer detection method, detection device and detection system Download PDFInfo
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- CN116504664A CN116504664A CN202310769404.6A CN202310769404A CN116504664A CN 116504664 A CN116504664 A CN 116504664A CN 202310769404 A CN202310769404 A CN 202310769404A CN 116504664 A CN116504664 A CN 116504664A
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- 238000001514 detection method Methods 0.000 title claims abstract description 79
- 239000000523 sample Substances 0.000 claims abstract description 133
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- 238000007689 inspection Methods 0.000 claims description 29
- 238000006073 displacement reaction Methods 0.000 claims description 17
- 230000007613 environmental effect Effects 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 193
- 238000004519 manufacturing process Methods 0.000 description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
The invention discloses a wafer detection method, a detection device and a detection system; the method comprises the steps of receiving wafer image information of a wafer to be detected, probe tip image information of a probe and temperature information of a field environment, outputting control signals according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be detected, sending detection signals to the wafer to be detected, receiving parameter information fed back by the wafer to be detected, and judging whether the received parameter information meets preset requirements or not so as to realize detection of the wafer; according to the method, the influence of temperature on detection equipment and the wafer in a high-low temperature environment is considered by combining the wafer image information, the probe tip image information and the temperature information, so that the technical problem that the wafer cannot be reliably and accurately detected due to the temperature influence of the field environment when the wafer is subjected to high-low temperature test in the related art is solved.
Description
Technical Field
The present invention relates to the field of semiconductor device inspection technology, and in particular, to a wafer inspection method, an inspection apparatus, and an inspection system.
Background
The functional stability of the semiconductor chip, which is the main core component of the electronic device, determines whether the whole electronic product can normally realize the functions of the semiconductor chip.
In the production and manufacturing of semiconductor chips, wafers are generally used as carriers, and in order to save production and manufacturing costs and maintain good product yield, manufacturers generally need to test the wafers to ensure that chips on the wafers to be processed meet preset requirements before entering the next process. In the related art, the wafer is required to perform related high and low temperature tests, and whether the performance of the chip on the wafer still meets the preset requirement needs to be detected in the high and low temperature environment, however, due to the high requirement of the detection precision of the wafer, the detection method at normal temperature may not be applicable in the high and low temperature environment, whether the wafer to be detected or the detection equipment is affected by the temperature of the environment.
Therefore, how to solve the technical problem that the detection accuracy of the wafer in the high-low temperature environment cannot meet the detection conditions in the related art is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The embodiment of the invention provides a wafer detection method, a detection device and a detection system, which are used for solving the technical problem that in the related art, in the process of carrying out high-low temperature test on a wafer, the performance parameters of the wafer cannot be accurately and stably detected because detection equipment and the wafer to be detected are influenced by the environment.
In a first aspect, an embodiment of the present invention provides a wafer inspection method, including:
receiving wafer image information, probe tip image information and temperature information of a site environment;
outputting a control signal according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be detected;
sending a detection signal to the wafer to be detected;
and receiving the parameter information fed back by the wafer to be tested, and judging whether the parameter information meets the preset requirement.
The method for testing the polarity of the FA connector has at least the following beneficial effects:
according to the wafer detection method, after receiving wafer image information of a wafer to be detected, probe tip image information of a probe and temperature information of a field environment, a control signal is output according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be detected, after sending a detection signal to the wafer to be detected, parameter information fed back by the wafer to be detected is received, and whether the received parameter information meets preset requirements is judged, so that detection of the wafer to be detected is achieved; according to the method, the influence of temperature on detection equipment and the wafer in a high-low temperature environment is considered by combining the wafer image information, the probe tip position information and the temperature information, so that the technical problem that the wafer cannot be reliably and accurately detected due to the temperature influence of the field environment when the wafer is subjected to a high-low temperature test in the related art is solved, and the method capable of accurately and efficiently detecting the wafer in the high-low temperature environment is provided.
According to other embodiments of the present invention, the controlling the probe to move to the target position on the wafer according to the wafer image information, the probe tip image information and the temperature information output control signal includes:
obtaining distance parameters according to the wafer image information and the probe tip image information;
obtaining compensation parameters according to the temperature information;
and outputting the control signal according to the distance parameter and the compensation parameter to control the probe to adjust on three X, Y, Z adjusting shafts so that the probe moves to the target position.
According to other embodiments of the present invention, the compensation parameters include a first compensation parameter and a second compensation parameter, and the acquiring the compensation parameters according to the temperature information includes:
and inputting the temperature information into a prediction AI model to obtain the first compensation parameter of the wafer to be detected and the second compensation parameter of the probe.
According to the wafer inspection method of other embodiments of the present invention, the predicted AI model is capable of outputting corresponding compensation parameters according to different temperature information after receiving a large amount of different temperature data and performing model training.
According to other embodiments of the present invention, the method for detecting a wafer further includes:
and moving the wafer to be tested and the probe to a preset position.
In a second aspect, an embodiment of the present invention provides a wafer inspection apparatus, including:
the information receiving module is used for receiving wafer image information of the wafer to be tested, probe tip image information and temperature information of the field environment;
the movement control module is used for outputting control signals according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be detected;
the detection signal control module is used for sending a detection signal to the wafer to be detected;
and the information judging module is used for receiving the parameter information fed back by the wafer to be tested and judging whether the parameter information meets the preset requirement.
According to other embodiments of the present invention, the movement control module includes a prediction AI model unit and a movement control unit;
the prediction AI model unit is used for receiving the temperature information and outputting compensation parameters;
the mobile control unit is used for receiving the wafer image information and the probe tip image information and obtaining distance parameters according to the wafer image information and the probe tip image information;
the movement control unit is also used for receiving the compensation parameter and outputting the control signal according to the compensation parameter and the distance parameter to control the probe to move to the target position.
In a third aspect, an embodiment of the present invention provides a wafer inspection system, including an image acquisition device, a temperature acquisition device, a probe, a displacement adjustment stage, and a wafer inspection device as described above;
the wafer detection device is respectively connected with the image acquisition device, the temperature acquisition device and the displacement adjustment platform;
the image acquisition device is used for acquiring wafer image information of a wafer to be detected and probe tip image information of a probe; transmitting the wafer image information and the probe tip image information to the wafer detection device;
the temperature acquisition device is used for acquiring temperature information of the field environment and transmitting the temperature information to the wafer detection device;
the wafer detection device outputs a control signal to control the displacement adjustment platform to perform adjustment according to the received image information and temperature information, so that after the probe fixed on the displacement adjustment platform moves to a target position, the wafer detection device outputs a detection signal to detect the wafer and receives and judges whether the parameter information fed back by the wafer meets the preset requirement.
According to further embodiments of the present invention, the image acquisition device includes a first CCD camera and a second CCD camera; the first CCD camera is used for acquiring wafer image information of the wafer to be detected, and the second CCD camera is used for acquiring probe tip image information;
the temperature acquisition device comprises a temperature sensor.
According to further embodiments of the present invention, the displacement adjustment stage includes a three-dimensional adjustment frame.
Drawings
FIG. 1 is a flowchart of a wafer inspection method according to an embodiment of the present invention;
FIG. 2 is a flowchart of a step S200 of a wafer inspection method according to an embodiment of the present invention;
FIG. 3 is a schematic block diagram illustrating an exemplary wafer inspection apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic block diagram illustrating another embodiment of a wafer inspection apparatus according to an embodiment of the present invention;
FIG. 5 is a block diagram of a wafer inspection system according to an embodiment of the present invention.
Detailed Description
The conception and technical effects of the present invention will be clearly and completely described in conjunction with the following examples to fully understand the objects, features and effects of the present invention. It is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention.
In the description of the embodiments of the present invention, if "several" is referred to, it means more than one, if "multiple" is referred to, it is understood that the number is not included if "greater than", "less than", "exceeding", and it is understood that the number is included if "above", "below", "within" is referred to. If reference is made to "first", "second" it is to be understood as being used for distinguishing technical features and not as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
Referring to fig. 1, an embodiment of the present invention provides a wafer inspection method, which includes the steps of:
s100, receiving wafer image information, probe tip image information and temperature information of a site environment;
the wafer image information and the probe tip image information are respectively acquired by the first image acquisition device and the second image acquisition device and then transmitted and received, and the image acquisition devices can be CCD cameras or other types of industrial cameras. The temperature information of the field environment, namely the temperature information of the current environment of the wafer to be tested, can be transmitted after being collected by a temperature collecting device such as a temperature sensor and the like.
S200, outputting control signals according to the image information of the wafer, the image information of the probe tip and the temperature information to control the probe to move to a target position on the wafer to be tested;
after receiving the wafer image information, the probe tip image information and the temperature information in step S100, the control signal is output to control the movement of the probe in combination with the wafer image information, the probe tip image information and the temperature information, and by adding the influence generated by the temperature change to the movement control of the control probe, the inaccuracy of the movement control of the probe caused by the environmental influence of the wafer and the wafer detection equipment (probe) in the high-low temperature environment can be eliminated.
S300, sending a detection signal to a wafer to be detected;
after the probe is moved to the target position on the wafer by combining the wafer image information, the probe tip image information and the temperature information, a detection signal is sent to the wafer to be detected to detect the electrical characteristics of the chip currently corresponding to the wafer to be detected, each chip on the wafer to be detected is traversed, and detection is carried out on each chip to realize detection of the wafer to be detected.
S400, receiving parameter information fed back by the wafer to be tested, and judging whether the parameter information meets preset requirements.
And controlling the probe to move to a target position on the wafer to be detected through the steps S100 to S300, sending a detection signal to the wafer to be detected, receiving parameter information fed back by a chip (the wafer to be detected comprises a plurality of chips) currently receiving the detection signal on the wafer to be detected, and judging whether the received parameter information of each chip meets the preset requirement or not, so that the detection process of each chip on the wafer to be detected is realized.
According to the wafer detection method, after the wafer image information of the wafer to be detected, the probe tip image information of the probe and the temperature information of the detection site environment are received, the probe is controlled to move to a target position on the wafer to be detected by integrating the wafer image information, the probe tip image information and the temperature information output control signal, a detection signal is sent to a chip on the wafer to be detected, parameter information fed back by the chip on the wafer to be detected is received, and whether the currently detected chip meets preset requirements is judged by reading and comparing the parameter information; the method solves the technical problems that the movement control of the probe is not accurate enough and the detection of the wafer cannot be smoothly realized due to the influence of the high-low temperature environment on the detection equipment (probe) and the wafer in the high-low temperature environment, and provides a method capable of accurately and efficiently detecting the wafer in the high-low temperature environment.
Referring to fig. 2, in some embodiments, outputting control signals to control movement of the probe to a target location on the wafer based on the wafer image information, the probe tip image information, and the temperature information in step 200 includes the steps of:
s210, obtaining distance parameters according to wafer image information and probe tip image information;
s220, obtaining compensation parameters according to the temperature information;
and S230, outputting a control signal according to the distance parameter and the compensation parameter to control the probe to adjust on three adjusting shafts X, Y, Z, so that the probe moves to the target position.
In this embodiment, after the wafer image information and the probe tip image information are acquired by the first CCD camera and the second CCD camera, respectively, the wafer image information is transmitted in a first coordinate information manner, the probe tip image information is transmitted in a second coordinate information manner, and the distance parameter is obtained by receiving the first coordinate information and the second coordinate information. Similarly, the compensation parameter obtained through the temperature information is also a distance compensation parameter, and the control signal is output through the obtained distance parameter and the obtained distance compensation parameter, so that the probe is adjusted on the X, Y, Z three adjusting shafts, and the probe can accurately move to the target position through the control signal output by the distance parameter and the compensation parameter even under the influence of a high-low temperature environment.
In some embodiments, the compensation parameters obtained according to the temperature information in the above embodiments include a first compensation parameter and a second compensation parameter. The first compensation parameter is a compensation parameter of the wafer to be tested affected by the high-low temperature environment, that is, because the wafer to be tested is under the high-temperature or low-temperature environment, after the shape of the wafer to be tested is distorted due to the influence of the temperature on the wafer to be tested, the position information of the wafer to be tested in the XY direction (that is, the coordinate information of the wafer to be tested acquired by the first CCD camera) is changed, so that when the probe is controlled to move to the target position of the wafer to be tested, the influence of the distortion of the wafer to be tested due to the temperature change needs to be considered. The second compensation parameter is a compensation parameter of the probe affected by the high and low temperature environment, and similarly, because the probe is affected by temperature in the high or low temperature environment, the probe is distorted, and the position information of the probe tip in the XY direction (namely, the coordinate information of the probe tip acquired by the second CCD camera) is changed, so that the influence of the distortion caused by the temperature change of the probe needs to be considered when the probe is controlled to move to the target position of the wafer to be measured. In this embodiment, the temperature information is input into the prediction AI model, and after the prediction AI model receives the temperature information, the corresponding first compensation parameter and second compensation parameter are output according to a preset rule, and then, the control signal can be accurately output through the distance parameter obtained through the image information and the first compensation parameter and the second compensation parameter obtained through the temperature information, so that the probe can still accurately move to the target position in the high-low temperature environment.
In some embodiments, the predicted AI model in the above embodiments is capable of outputting corresponding compensation parameters according to different input temperature information after model training by receiving a large amount of different temperature data. In this embodiment, model training of the predictive AI model includes: under the environment temperature of a preset standard range, the compensation parameter output by the AI model is predicted to be 0, namely, in the preset standard range, the influence of the temperature on the wafer to be detected and the probe is negligible, and the probe can still be moved to a target position on the wafer according to the image information of the wafer to be detected and the image information of the probe tip under the condition that the compensation parameter is not added by the probe; after the temperature exceeds the preset standard range, the predicted AI model is trained through a large amount of temperature data, so that the first compensation parameter of the wafer to be detected and the second compensation parameter of the probe can be accurately obtained, and the probe can be accurately moved to the target position on the wafer only by considering the corresponding first compensation parameter of the wafer to be detected and the second compensation parameter of the probe in the movement control of the probe. In this embodiment, the first compensation parameter and the second compensation parameter are only used to distinguish the influences on the wafer and the probe in the high-low temperature environment, but in practical application, the first compensation parameter and the second compensation parameter are generally unified into the compensation parameter, and further, under the combination of the distance parameter obtained through the image information and the compensation parameter obtained through the temperature information, the probe can be accurately controlled to be moved to the target position of the wafer to be tested in the high-low temperature environment.
In some embodiments, in order to improve accuracy of compensation parameters, because differences between an initial position of a wafer to be detected and an initial position of a probe may cause differences between compensation parameters, when performing training of a predictive AI model, the position of the wafer to be detected and the position of the probe need to be moved to preset positions respectively, and then the predictive AI model is trained, so that when the wafer is actually detected in a high-low temperature environment, the problem that when the wafer is detected, the initial position of the wafer and the initial position of the probe are detected, and when the wafer is trained by the predictive AI model, errors caused by different positions of the wafer to be detected and the probe cannot accurately move probe control to a target position, and therefore the wafer cannot be effectively detected is avoided.
Referring to fig. 3, an embodiment of the present invention provides a wafer inspection apparatus, which includes an information receiving module, a movement control module, a detection signal control module, and an information judging module; the information receiving module is used for receiving wafer image information of a wafer to be detected, probe tip image information and temperature information of a site environment; the movement control module is used for outputting control signals according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be tested; the detection signal control module is used for sending a detection signal to the wafer to be detected after the probe moves to a target position on the wafer; the information judging module is used for receiving the parameter information fed back when the wafer to be detected is detected and judging whether the received parameter information meets the preset requirement. In this embodiment, a plurality of chips are arranged on a wafer to be tested, and in the manufacturing process of the wafer, detection is often required to mark the chips which do not meet the preset requirement, so that the chips which do not meet the preset requirement are prevented from entering the next process, and therefore, the waste of materials and the reduction of the yield are caused. In this embodiment, since the wafer needs to be subjected to the corresponding high-low temperature test during the manufacturing process to ensure that each chip on the wafer works normally in the high-low temperature environment, the wafer needs to be inspected when the wafer is subjected to the high-low temperature test, however, at this time, since the wafer and the probe of the inspection device are in the same high-low temperature test environment, if the probe is moved to the target position of the wafer only by the normal temperature inspection method, it is difficult to smoothly control the probe to move to the target position without considering the influence of the temperature on the wafer and the probe, and the inspection of each chip on the wafer cannot be smoothly performed.
Referring to fig. 4, in some embodiments, the movement control module includes a predictive AI model unit and a movement control unit; the prediction AI model unit is used for receiving the temperature information and outputting compensation parameters; the movement control unit is used for receiving the image information of the wafer and the image information of the probe tip, obtaining distance parameters according to the image information of the wafer and the image information of the probe tip, receiving compensation parameters at the same time, and outputting control signals to control the probe to move to the target position of the wafer to be tested by combining the distance parameters and the compensation parameters. In this embodiment, the prediction AI model unit performs model training by receiving a large amount of different temperature data, and then can output corresponding compensation parameters according to different input temperature information.
The process principle of the wafer detection device for detecting the wafer in the embodiment of the invention is corresponding to the process principle of the wafer detection method in any embodiment by mutual reference.
Referring to fig. 5, an embodiment of the present invention provides a wafer inspection system, which includes an image acquisition device, a temperature acquisition device, a probe, a displacement adjustment stage, and the wafer inspection device in the above embodiments. The wafer detection device is respectively connected with the image acquisition device, the temperature acquisition device and the displacement adjustment platform, the image acquisition device is used for acquiring wafer image information of a wafer to be detected and probe tip image information of a probe, the wafer image information and the probe tip image information are respectively transmitted to the wafer detection device in a mode of being converted into coordinate information, the temperature acquisition device is used for acquiring temperature information of an on-site environment and transmitting the temperature information to the wafer detection device, and the wafer detection device is used for adjusting the displacement adjustment platform according to received wafer image information, probe tip image information and temperature information output control signals, so that the probe fixedly installed on the displacement adjustment platform is moved to a target position on the wafer to be detected. At this time, the wafer detection equipment sends detection signals to the wafer, chips on the wafer to be detected are detected one by one, meanwhile, the wafer detection equipment also receives parameter information fed back when the wafer to be detected is detected, judges whether the parameter information meets preset requirements, marks the chips on the wafer which do not meet the preset requirements at present, and further detects the wafer. In this embodiment, during the movement control of the probe, by taking into consideration the error caused by the temperature information of the field environment on the wafer to be tested and the influence of the probe, the probe can be accurately moved to the target position even if the wafer to be tested is in a high-low temperature environment, and the detection of the wafer is realized.
In some embodiments, the image capture device includes a first CCD camera and a second CCD camera; the first CCD camera is used for acquiring wafer image information of a wafer to be detected and transmitting the acquired wafer image information to the wafer detection device in a coordinate information mode; the second CCD camera is used for acquiring probe tip image information of the probe and transmitting the acquired probe tip image information to the wafer detection device in a coordinate information mode, and the wafer detection device further obtains distance parameters according to the received two coordinate information (namely the wafer image information and the probe tip image information). Meanwhile, the temperature acquisition device comprises a temperature sensor, the temperature sensor is used for acquiring temperature information of the field environment and then transmitting the temperature information to the wafer detection device, the wafer detection device obtains corresponding compensation parameters according to the temperature information, and at the moment, the wafer detection device outputs control signals in combination with the distance parameters and the compensation parameters to regulate the displacement regulation platform so as to drive the probe fixedly arranged on the displacement regulation platform to accurately move to a target position on the wafer.
In some embodiments, the displacement adjustment platform described in the above embodiments includes a three-dimensional adjustment frame, and adjustment of X, Y, Z three adjustment axes of the three-dimensional adjustment frame is controlled by a control signal output by the wafer detecting device.
After receiving the wafer image information acquired by the first CCD camera, the probe tip image information acquired by the second CCD camera and the temperature information acquired by the temperature sensor, the wafer detection device in the wafer detection system of the embodiment of the invention has a process principle of detecting the wafer which corresponds to the process principle realized by the wafer detection method in any embodiment in a cross reference manner.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present invention. Furthermore, embodiments of the invention and features of the embodiments may be combined with each other without conflict.
Claims (10)
1. A method of wafer inspection, comprising:
receiving wafer image information, probe tip image information and temperature information of a site environment;
outputting a control signal according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be detected;
sending a detection signal to the wafer to be detected;
and receiving the parameter information fed back by the wafer to be tested, and judging whether the parameter information meets the preset requirement.
2. The wafer inspection method of claim 1, wherein controlling movement of the probe to a target location on the wafer based on the wafer image information, the probe tip image information, and the temperature information output control signal comprises:
obtaining distance parameters according to the wafer image information and the probe tip image information;
obtaining compensation parameters according to the temperature information;
and outputting the control signal according to the distance parameter and the compensation parameter to control the probe to adjust on three X, Y, Z adjusting shafts so that the probe moves to the target position.
3. The method of claim 2, wherein the compensation parameters include a first compensation parameter and a second compensation parameter, and wherein the obtaining the compensation parameters based on the temperature information includes:
and inputting the temperature information into a prediction AI model to obtain the first compensation parameter of the wafer to be detected and the second compensation parameter of the probe.
4. The method of claim 3, wherein the predictive AI model is configured to output corresponding compensation parameters based on input of different temperature information after receiving a plurality of different temperature data and performing model training.
5. The method of any one of claims 1 to 4, wherein the receiving wafer image information, probe tip image information, and in-situ environmental temperature information is preceded by:
and moving the wafer to be tested and the probe to a preset position.
6. A wafer inspection apparatus, comprising:
the information receiving module is used for receiving wafer image information of the wafer to be tested, probe tip image information and temperature information of the field environment;
the movement control module is used for outputting control signals according to the wafer image information, the probe tip image information and the temperature information to control the probe to move to a target position on the wafer to be detected;
the detection signal control module is used for sending a detection signal to the wafer to be detected;
and the information judging module is used for receiving the parameter information fed back by the wafer to be tested and judging whether the parameter information meets the preset requirement.
7. The wafer inspection apparatus of claim 6, wherein the movement control module comprises a predictive AI model unit and a movement control unit;
the prediction AI model unit is used for receiving the temperature information and outputting compensation parameters;
the mobile control unit is used for receiving the wafer image information and the probe tip image information and obtaining distance parameters according to the wafer image information and the probe tip image information;
the movement control unit is also used for receiving the compensation parameter and outputting the control signal according to the compensation parameter and the distance parameter to control the probe to move to the target position.
8. A wafer inspection system comprising an image acquisition device, a temperature acquisition device, a probe, a displacement adjustment platform, and the wafer inspection device of claim 6 or 7;
the wafer detection device is respectively connected with the image acquisition device, the temperature acquisition device and the displacement adjustment platform;
the image acquisition device is used for acquiring wafer image information of a wafer to be detected and probe tip image information of a probe; transmitting the wafer image information and the probe tip image information to the wafer detection device;
the temperature acquisition device is used for acquiring temperature information of the field environment and transmitting the temperature information to the wafer detection device;
the wafer detection device outputs a control signal to control the displacement adjustment platform to perform adjustment according to the received image information and temperature information, so that after the probe fixed on the displacement adjustment platform moves to a target position, the wafer detection device outputs a detection signal to detect the wafer and receives and judges whether the parameter information fed back by the wafer meets the preset requirement.
9. The wafer inspection system of claim 8, wherein the image capture device comprises a first CCD camera and a second CCD camera; the first CCD camera is used for acquiring wafer image information of the wafer to be detected, and the second CCD camera is used for acquiring probe tip image information;
the temperature acquisition device comprises a temperature sensor.
10. The wafer inspection system of claim 8 or 9, wherein the displacement adjustment stage comprises a three-dimensional adjustment frame.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118425744A (en) * | 2024-07-04 | 2024-08-02 | 成都云绎智创科技有限公司 | Slide testing method, slide testing device, slide testing equipment, slide testing storage medium and slide testing program product |
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| CN118425744A (en) * | 2024-07-04 | 2024-08-02 | 成都云绎智创科技有限公司 | Slide testing method, slide testing device, slide testing equipment, slide testing storage medium and slide testing program product |
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Application publication date: 20230728 |