TW202035992A - Probe card, wafer inspection apparatus having the same, and chip probe test flow using the same - Google Patents

Abstract

A probe card including a plurality of needles, a circuit board, and at least one temperature sensing device is provided. The circuit board is electrically connected to the plurality of needles. The temperature sensing device is thermally coupled to at least one of the plurality of needles. A wafer inspection apparatus having the probe card is also provided. A chip probe test flow using the wafer inspection apparatus is also provided.

Description

Probe card, wafer inspection equipment with the same, and bare die testing process using it

The present invention relates to an electronic device and a test process, and in particular to a probe card, a wafer inspection device having the same, and a bare die test process using the same

The bare die test (Chip Probe, CP) is an important test for product yield verification on the bare die on the wafer (before packaging) after the semiconductor wafer is manufactured. In the process of bare die testing, if the ambient temperature needs to be adjusted, the test wafer and testing equipment are generally placed in a constant temperature chamber for testing, and the wafer chuck corresponding to the wafer chuck , Down, left, right and middle points for temperature measurement.

The present invention provides a probe card, which can improve the response of temperature sensing.

The present invention provides a wafer inspection device and a bare crystal test process, which can measure and adjust the temperature of a wafer area under circuit test relatively quickly and accurately.

The probe card of the present invention includes a plurality of probes, a circuit board and at least one temperature sensing device. The circuit board is electrically connected to a plurality of probes. The temperature sensing device is thermally coupled to at least one of the probes.

In an embodiment of the invention, the circuit board includes at least one thermal contact and a test element. At least one temperature sensing device is thermally coupled to at least one of the plurality of probes via at least one thermal contact; and at least one of the plurality of probes is electrically connected to the test element via at least one thermal contact.

In an embodiment of the present invention, the temperature sensing device includes a thermally conductive insulator and a thermocouple. The thermally conductive insulator is coupled to at least one thermal contact on the circuit board. The thermocouple is coupled to the thermally conductive insulator, and the thermocouple is electrically separated from at least one thermal junction on the circuit board.

In an embodiment of the present invention, the probe card further includes thermal insulation glue. The thermal insulation glue at least covers the thermally conductive insulator.

In an embodiment of the present invention, the at least one temperature sensing device is a plurality of temperature sensing devices, and the at least one thermal junction is a plurality of thermal junctions. The multiple temperature sensing devices are thermally coupled to the corresponding multiple probes via the corresponding multiple thermal contacts, and the multiple thermal contacts are electrically separated from each other.

Based on the above, the probe card of the present invention may have a temperature sensing device. Therefore, the probe card can be used for circuit testing and temperature sensing. And, the response of temperature sensing can be improved.

The wafer inspection equipment of the present invention is suitable for performing bare die testing on wafers. The wafer inspection equipment includes a wafer chuck, a temperature control device, a temperature sensor, the aforementioned probe card, and a control unit. The wafer chuck has a supporting surface suitable for supporting the wafer. The temperature control device is thermally coupled to the wafer chuck. The temperature sensor is thermally coupled to the wafer chuck. The control unit is electrically connected to the temperature control device, the temperature sensor and the probe card.

In an embodiment of the present invention, the temperature control device includes a heating unit and a cooling unit.

In an embodiment of the present invention, the cooling unit includes a cooling pipe and a cooler, and the cooling pipe is buried in the wafer chuck and communicates with the cooler.

The die test process of the present invention includes the following steps. Provide the aforementioned wafer inspection equipment. Place the wafer on the supporting surface of the wafer chuck, where the wafer includes a plurality of test pads. The multiple probes of the probe card are brought into contact with the corresponding multiple test pads to perform circuit inspection on the wafer on the wafer chuck.

In an embodiment of the present invention, the die testing process further includes the following steps. The temperature control of the wafer on the wafer chuck is performed by the temperature control device.

In an embodiment of the present invention, the step of controlling the temperature of the wafer on the wafer chuck includes: measuring the wafer on the wafer chuck by using at least one temperature sensing device or temperature sensor of the probe card The temperature of the wafer on the wafer chuck is controlled by the control unit through the temperature control device.

In an embodiment of the present invention, if the circuit detection is performed on the wafer on the wafer chuck, at least the temperature of the wafer on the wafer chuck is measured by at least one temperature sensing device of the probe card; And if the circuit detection is not performed on the wafer on the wafer chuck, at least the temperature of the wafer on the wafer chuck is measured by the temperature sensor.

Based on the above, the probe card included in the wafer inspection equipment of the present invention may have a temperature sensing device. Therefore, when the wafer inspection device of the present invention performs circuit inspection on the wafer, the temperature sensing response can be improved. In addition, when performing bare die testing on a wafer, the probe card of the present invention can perform circuit testing and temperature sensing for the same chip area. Therefore, the temperature of the wafer can be adjusted according to the temperature of the wafer area under circuit test. In this way, the temperature measurement and adjustment of the wafer area under circuit test can be faster and more accurate.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

Hereinafter, the present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness of the layers and regions in the drawing will be exaggerated for clarity. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, for example: up, down, left, right, front or back, etc., only refer to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate but not to limit the present invention.

1A to 1C are schematic side views of a part of a manufacturing method of a probe card according to the first embodiment of the present invention. In addition, for the sake of clarity, some mold layers or components are omitted in FIGS. 1A to 1C.

Please refer to FIG. 1A first, a circuit board 120 is provided. The circuit board 120 may include a thermal contact 121 and a test element 122. In FIG. 1A, only one thermal junction 121 and one test element 122 are exemplarily shown, but the present invention does not limit the number of thermal junctions 121 and the number of test elements 122.

In this embodiment, the thermal contact 121 is, for example, a soldering pad, and the soldering pad serving as the thermal contact 121 can be electrically connected to the test element 122.

In this embodiment, the test component 122 may include an active component (such as a transistor), a passive component (such as a capacitor, a resistor, or an inductor), or a combination thereof. The type and configuration of the test element 122 can be adjusted according to design requirements, and the present invention is not limited.

Please continue to refer to FIG. 1A, a thermally conductive insulator 131 is provided, and the thermally conductive insulator 131 is coupled to the thermal contact 121 on the circuit board 120. The material of the thermally conductive insulator 131 may include, for example, Boron Nitride (BN) (such as cubic boron nitride (CubicBo-ron Nitride, cBN)), beryllium oxide (BeO), aluminum oxide (Aluminium oxide, Al ₂ O ₃ ) or other suitable insulating materials with high thermal conductivity. For example, the resistivity of the insulating material with high thermal conductivity can be greater than 1.0×10 ⁸ ohm meters (Ω·m), and the thermal conductivity of the insulating material with high thermal conductivity can be greater than 100 watt meters ^-1 Kelvin- ¹ (W/ mK), but the present invention is not limited to this.

In this embodiment, the thermally conductive insulator 131 may be plated with an easy solder layer 132 or an easy solder layer 133 with high thermal conductivity, so that the thermally conductive insulator 131 can be thermally coupled to other components (including direct connection or Indirect connection). In an embodiment, the thermally conductive insulator 131 may be made of thermal conductive pad, thermal tape, thermal grease, or other suitable materials or methods, so that the thermally conductive insulator 131 can be adhered to The way is thermally coupled with other components.

For example, the thermally conductive insulator 131 may have a first side 131a and a second side 131b opposite to each other. The first side 131 a of the thermally conductive insulator 131 (below the first side 131 a in FIG. 1A) may have an easy solder layer 132, and the second side 131 b of the thermally conductive insulator 131 may have an easy solder layer 133. Moreover, if the easy solder layer 132 and the easy solder layer 133 are provided on the thermally conductive insulator 131, the easy solder layer 132 and the easy solder layer 133 can be separated from each other.

1B, the thermocouple 135 is coupled to the thermally conductive insulator 131, and the thermal junction 121 connected to the thermally conductive insulator 131 is electrically separated from the thermocouple 135. The thermocouple 135 may include different conductors 135a, 135b (labeled in FIG. 2A or FIG. 2B). At different temperatures, the aforementioned different conductors 135a and 135b may have different thermal potentials (ie, the Seebeck Effect). By measuring the thermal potential difference between the aforementioned different conductors 135a and 135b by the voltmeter 135c (marked in FIG. 2A or FIG. 2B), the corresponding temperature can be calculated.

For example, the thermally conductive insulator 131 may be directly connected to the easy soldering layer 132 on the first side 131 a thereof, and the easy soldering layer 132 may be directly connected to the thermal contact 121. In addition, the thermally conductive insulator 131 may be directly connected to the easy-soldering layer 133 on the second side 131 b thereof, and the easy-soldering layer 133 may be directly connected to the thermocouple 135. In this way, the thermocouple 135, the thermally conductive insulator 131, and the thermal junction 121 can be thermally coupled, and the thermocouple 135 and the thermal junction 121 can be electrically separated.

It should be noted that the present invention does not limit the sequence of connecting the thermocouple 135 and the thermal junction 121 to the thermally conductive insulator 131. For example, in an embodiment not shown, the thermocouple 135 can be first connected to the easy-soldering layer 133 on the thermally conductive insulator 131, and then the thermally conductive insulator 131 coupled to the thermocouple 135 can be placed thereon. The easy-soldering layer 132 on the upper side is connected to the thermal contact 121.

1C, after thermally coupling the thermocouple 135, the thermally conductive insulator 131 and the thermal junction 121, the thermally insulating glue 140 covering the thermally conductive insulator 131 can be formed. The material of the thermal insulation glue 140 may include, for example, silicon dioxide or other suitable insulating materials with low thermal conductivity. For example, the resistivity of the insulating material with high thermal conductivity can be greater than 1.0×10 ¹¹ ohm meters (Ω·m), and the thermal conductivity of the insulating material with low thermal conductivity can be less than 0.1 watt-meter ^-1 Kelvin- ¹ (W/ mK), but the present invention is not limited to this.

In this embodiment, the thermal insulation glue 140 may further cover part of the thermocouple 135 and part of the thermal junction 121, but the present invention is not limited to this.

After the above-mentioned manufacturing method, the manufacturing of the probe card 100 of this embodiment can be generally completed.

Please refer to Figure 1C, Figure 2A and Figure 2B, in which Figure 2A shows a schematic side view of a probe card in the first embodiment of the present invention, and Figure 2B shows a probe card of the first embodiment of the present invention Schematic diagram of the circuit and heat transfer path of the pin card in use. In addition, for clarity, some mold layers or components are omitted in FIGS. 2A and 2B. In addition, in FIGS. 2A and 2B, a dot line box is used to indicate the area where the thermal contact 121 can be configured, and a dashed line is used to indicate the area between the thermal contact 121 and the temperature sensing device 130 The thermal coupling.

The probe card 100 includes a plurality of probes 110, a circuit board 120 and a temperature sensing device 130. The circuit board 120 is electrically connected to the probe 110. The temperature sensing device 130 is thermally coupled to the corresponding probe 110. As shown in FIG. 2A and FIG. 2B, in an exemplary usage mode, the probe 110 of the probe card 100 may be in contact with a test point (for example, the test pad 320 on the wafer or the wafer 300), so that the probe The card 100 or the testing device with the probe card 100 may be suitable for circuit testing.

In this embodiment, the circuit board 120 includes a thermal contact 121 and a test element 122, the temperature sensing device 130 is thermally coupled to the corresponding probe 110 through the thermal contact 121, and the probe 110 is electrically connected through the thermal contact 121 Connected to the test element 122. In other words, in terms of a current path, the thermal contact 121 is located between the test element 122 and the probe 110.

In this embodiment, the temperature sensing device 130 includes a thermally conductive insulator 131 and a thermocouple 135. The thermally conductive insulator 131 is coupled to the thermal contact 121 on the circuit board 120. The thermocouple 135 is coupled to the thermally conductive insulator 131, and the thermocouple 135 is electrically separated from the thermal junction 121 on the circuit board 120. In other words, the thermocouple 135 and the thermal junction 121 are electrically separated from each other by the thermally conductive insulator 131. In addition, in terms of heat conduction/heat diffusion, the thermal junction 121 is located between the temperature sensing device 130 and the probe 110. In this way, the probe card 100 can be used for circuit testing and temperature sensing. In addition, the interference between the temperature sensing signal and the circuit test signal can be reduced, and the temperature sensing response can be improved.

In an embodiment, apart from the wire 150 used to electrically connect and thermally couple each other between the thermal contact 121 and the probe 110, other components for testing may not be provided. In this way, the electrical conduction efficiency and thermal conduction efficiency between the thermal contact 121 and the probe 110 can be improved.

FIG. 3 is a schematic diagram of the circuit and heat transfer path of a probe card 100 in use according to the second embodiment of the present invention. The probe card 200 of this embodiment is similar to the probe card 100 of the first embodiment, and similar components are denoted by the same reference numerals and have similar functions, and the description is omitted.

In this embodiment, the probe card 200 includes a plurality of probes 110 and 210, a circuit board 120 and a plurality of temperature sensing devices 130 and 230. The circuit board 120 includes a plurality of thermal contacts 121 and 221 and test elements 122 and 222. The temperature sensing device 130 is thermally coupled to the corresponding probe 110 via the corresponding thermal contact 121, and the temperature sensing device 230 is thermally coupled to the corresponding probe 210 via the corresponding thermal contact 221. The thermal junction 121 and the thermal junction 221 are electrically separated from each other.

In an embodiment, the thermal junction 121 and the thermal junction 221 are thermally separated from each other, but the invention is not limited thereto.

It should be noted that the present invention does not limit the usage of the probe cards 100 and 200. For example, the present invention does not limit that the probe cards 100 and 200 must constitute the wafer inspection apparatus 400 of the subsequent embodiment. In other words, the application mode of the probe cards 100 and 200 can be adjusted according to requirements.

Based on the above, the probe card of the present invention may have a temperature sensing device. Therefore, the probe card can be used for circuit testing and temperature sensing. And, the response of temperature sensing can be improved.

FIG. 4A is a schematic side view of the usage mode of the wafer inspection equipment according to an embodiment of the present invention. 4B and 4C show a flow chart of bare die testing according to an embodiment of the invention. In addition, for clarity, some of the film layers or components are omitted in FIG. 4A, and some of the steps are omitted in the flow of FIGS. 4B and 4C.

In this embodiment, the probe card configured by the wafer inspection equipment 400 is based on the probe card 100 of the first embodiment, and similar components are denoted by the same reference numerals and have similar functions or configurations. Therefore, the description is omitted. However, it is worth noting that in other embodiments not shown, the configured probe card may be a probe card similar to the probe card 100. For example, in other embodiments not shown, the probe card used by the wafer inspection apparatus 400 may be the same or similar to the probe card 100 of the probe card 200. The following description will take the probe card 100 as an example.

The wafer inspection equipment 400 includes a wafer chuck 410, a temperature control device 420, a temperature sensor 430, a probe card 100 and a control unit 440. The wafer chuck 410 has a supporting surface 411 to be suitable for supporting the wafer 500. The temperature control device 420 is thermally coupled to the wafer chuck 410. The temperature sensor 430 is thermally coupled to the wafer chuck 410. The probe card 100 is disposed on the supporting surface 411 of the wafer chuck 410, and there is a distance between the probe card 100 and the supporting surface 411 of the wafer chuck 410, so that the probe 110 of the probe card 100 can be It is in contact with the test pad 520 on the wafer 500 to be suitable for circuit inspection of the wafer 500 placed on the support surface 411. The parameters (recipe) and content of the circuit detection can be adjusted according to design or use requirements, and are not limited in the present invention.

In this embodiment, the temperature control device 420 may include a heating unit 421 and a cooling unit 422. For example, the heating unit 421 may include a heating resistor, and the cooling unit 422 may include a cooling tube 422b and a chiller 422a filled with a cooling liquid. The cooling liquid is, for example, water, water including antifreeze, or a refrigerant. The invention is not limited to this. That is, the temperature control device 420 can increase or decrease the temperature of the wafer chuck 410 by the heating unit 421 or the cooling unit 422, so that the temperature of the wafer 500 placed on the supporting surface 411 can be increased correspondingly. High or low. The shape and configuration of the heating unit 421 or the cooling unit 422 can be adjusted according to design requirements, and the present invention is not limited. For example, the cooling pipe 422b may be buried in the wafer chuck 410, and the cooling pipe 422b may be connected to the cooler 422a outside the wafer chuck 410.

Referring to FIGS. 4A to 4C, the test flow of the die 500 for the wafer 500 may include the following steps. The aforementioned wafer inspection equipment 400 is provided. The wafer 500 is placed on the supporting surface 411 of the wafer chuck 410 of the wafer inspection apparatus 400. The wafer 500 may include a plurality of chip areas 510, and adjacent chip areas 510 may be separated from each other by scribe lanes (not shown). Each wafer area 510 has a plurality of test pads 520, and the test pads 520 can be electrically connected to the components in the wafer area 510. The probe 110 of the probe card 100 of the wafer inspection equipment 400 is brought into contact with the corresponding test pad 520 of the wafer 500 on the wafer chuck 410, so as to perform a test on the wafer area 510 of the wafer 500 on the wafer chuck 410 Circuit testing.

In an embodiment, the probe 110 of the probe card 100 may contact the corresponding test pad 520 by raising the wafer chuck 410, but the present invention is not limited to this. In another embodiment, the probe 110 of the probe card 100 can be brought into contact with the corresponding test pad 520 by the lowering of the probe card 100.

In this embodiment, after the wafer 500 is placed on the wafer chuck 410, the temperature control device 420 may be used to control the temperature of the wafer 500 on the wafer chuck 410.

In this embodiment, when the probe 110 of the probe card 100 has not touched the test pad 520 of the wafer 500, or when the circuit test of the wafer 500 on the wafer chuck 410 has not been performed, you can use The temperature sensor 430 thermally coupled to the wafer chuck 410 senses the temperature of the wafer 500, and transmits the data to the control unit 440 through the corresponding signal line 450, so that the control unit 440 can be thermally coupled to the wafer The temperature control device 420 of the chuck 410 adjusts the temperature of the wafer 500.

In this embodiment, when the probe 110 of the probe card 100 contacts the test pad 520 of the wafer 500, or when the circuit test is performed on the wafer 500 on the wafer chuck 410, thermal coupling can be used The temperature sensing device 130 connected to the probe 110 senses the temperature of the wafer 500, and transmits the data to the control unit 440 through the corresponding signal line 450, so that the control unit 440 can be thermally coupled to the wafer holder The temperature control device 420 of the tray 410 adjusts the temperature of the wafer 500. Compared with the temperature sensor 430 thermally coupled to the wafer chuck 410 to sense the temperature of the wafer 500, the temperature sensing device 130 thermally coupled to the probe 110 senses the temperature of the wafer 500. It is fast (or close to instant) and can be closer to the wafer area 510 to be measured, so it can be more suitable for high-power wafer products. The aforementioned high-power wafer products are, for example, chips whose power generated during operation is greater than or equal to 100 watts (W), or the heat density generated during operation is greater than or equal to 25 watts/cm² ( W/cm ² ) wafers.

For example, please refer to FIG. 5, where FIG. 5 may be a simulation diagram of the wafer temperature distribution when a high-power wafer product is subjected to a bare die test. And, in FIG. 5, the box located near the center of the wafer is the position of the tested die (ie, the wafer area). As shown in Figure 5, when the aforementioned high-power wafer products are subjected to bare die testing, the temperature difference of the wafer may be above 80°C. Therefore, with the wafer inspection equipment and the bare die testing process of an embodiment of the present invention, the temperature measurement of the bare die under circuit test can be performed, and the temperature can be measured more quickly and accurately. That is to say, compared to only measuring the temperature at five points on the top, bottom, left, right, and center of the wafer, or averaging the temperature measurement results of the aforementioned five points, according to an embodiment of the present invention The wafer inspection equipment and bare die test process can be closer to the actual temperature of the tested die.

In one embodiment, when the probe 110 of the probe card 100 contacts the test pad 520 of the wafer 500, or when the circuit test is performed on the wafer 500 on the wafer chuck 410, thermal coupling can be used The temperature sensor 430 connected to the wafer chuck 410 and the temperature sensing device 130 thermally coupled to the probe 110 sense the temperature of the wafer 500 and transmit the data to the control unit 440 through the corresponding signal line 450 to The control unit 440 can adjust the temperature of the wafer 500 through the temperature control device 420 thermally coupled to the wafer chuck 410.

In one embodiment, if the probe card includes multiple temperature sensing devices (e.g., the probe card 200 of the second embodiment includes multiple temperature sensing devices 130 and 230), these temperature sensing devices (e.g., multiple After each temperature sensing device 130, 230) transmits the data to the control unit 440 through the corresponding signal line 450, the control unit 440 can also perform corresponding calculations (such as average or weighted average) to determine the The temperature of the wafer 500 is adjusted by the temperature control device 420 thermally coupled to the wafer chuck 410.

Based on the above, the probe card included in the wafer inspection equipment of the present invention may have a temperature sensing device. Therefore, when the wafer inspection device of the present invention performs circuit inspection on the wafer, the temperature sensing response can be improved. In addition, when performing bare die testing on a wafer, the probe card of the present invention can perform circuit testing and temperature sensing for the same chip area. Therefore, the temperature of the wafer can be adjusted according to the temperature of the wafer area under circuit test. In this way, the temperature measurement and adjustment of the wafer area under circuit test can be faster and more accurate.

In summary, the probe card of the present invention may have a temperature sensing device. Therefore, when the probe card of the present invention or the wafer inspection device of the present invention is used to perform circuit inspection on the wafer, the temperature sensing response can be improved. In addition, when performing bare die testing on a wafer, the probe card of the present invention can perform circuit testing and temperature sensing for the same chip area. Therefore, the temperature of the wafer can be adjusted according to the temperature of the wafer area under circuit test. In this way, the temperature measurement and adjustment of the wafer area under circuit test can be faster and more accurate.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100, 200: Probe card 110, 210: Probe 120: circuit board 121, 221: hot junction 122: test component 130, 230: temperature sensing device 131: Thermally conductive insulator 131a: first side 131b: second side 132, 133: Easy solder layer 135: Thermocouple 135a, 135b: conductor 135c: Voltmeter 140: Insulation glue 150: wire 300: Wafer or chip 310: test pad 400: Wafer inspection equipment 410: Wafer Chuck 411: Support surface 420: Temperature control device 421: heating unit 422: cooling unit 422a: Cooler 422b: cooling pipe 430: temperature sensor 440: control unit 450: signal line 500: Wafer 510: chip area 520: test pad

1A to 1C are schematic side views of a part of a manufacturing method of a probe card according to the first embodiment of the present invention. FIG. 2A is a schematic side view of a usage mode of the probe card according to the first embodiment of the present invention. 2B is a schematic diagram of the circuit and heat transfer path of a probe card in use according to the first embodiment of the present invention. 3 is a schematic diagram of a circuit and heat transfer path of a probe card in use according to the second embodiment of the present invention. FIG. 4A is a schematic side view of the usage mode of the wafer inspection equipment according to an embodiment of the present invention. 4B and 4C show a flow chart of bare die testing according to an embodiment of the invention. Figure 5 shows a simulation diagram of wafer temperature distribution during bare die testing of a high-power wafer product

100: Probe card

110: Probe

120: circuit board

121: hot junction

122: test component

130: temperature sensing device

400: Wafer inspection equipment

410: Wafer Chuck

411: Support surface

420: Temperature control device

421: heating unit

422: cooling unit

422a: Cooler

422b: cooling pipe

430: temperature sensor

440: control unit

450: signal line

500: Wafer

510: chip area

520: test pad

Claims (10)

A probe card, including: Multiple probes A circuit board electrically connected to the plurality of probes, and the circuit board includes at least one thermal contact and a test element; and At least one temperature sensing device, including a thermally conductive insulator and a thermocouple, wherein: The thermocouple is coupled to the thermally conductive insulator, and the thermally conductive insulator is coupled to the at least one thermal junction on the circuit board, so that the at least one temperature sensing device passes through the at least one thermal The contact is thermally coupled to at least one of the plurality of probes; At least one of the plurality of probes is electrically connected to the test element through the at least one thermal contact; and The thermocouple is electrically separated from the at least one thermal contact on the circuit board. The probe card as described in item 1 of the scope of patent application includes: The thermal insulation glue at least covers the thermally conductive insulator. The probe card described in item 1 of the scope of patent application, in which: The at least one temperature sensing device is a plurality of temperature sensing devices; The at least one thermal junction is a plurality of thermal junctions; The plurality of temperature sensing devices are thermally coupled to the corresponding plurality of probes via the corresponding plurality of thermal contacts; and The plurality of thermal contacts are electrically separated from each other. A wafer inspection equipment is suitable for performing bare die testing on wafers. The wafer inspection equipment includes: The wafer chuck has a supporting surface suitable for supporting the wafer; A temperature control device, thermally coupled to the wafer chuck; A temperature sensor, thermally coupled to the wafer chuck; The probe card described in item 1 of the scope of patent application; and The control unit is electrically connected to the temperature control device, the temperature sensor and the probe card. As for the wafer inspection equipment described in item 4 of the scope of patent application, the temperature control device includes a heating unit and a cooling unit. The wafer inspection equipment according to the 5th patent application, wherein the cooling unit includes a cooling pipe and a cooler, and the cooling pipe is embedded in the wafer chuck and communicated with the cooler. A bare die test process, including: Provide wafer inspection equipment as described in item 4 of the scope of patent application; Placing the wafer on the supporting surface of the wafer chuck, wherein the wafer includes a plurality of test pads; and The multiple probes of the probe card are brought into contact with the corresponding multiple test pads, so as to perform circuit inspection on the wafer on the wafer chuck. As described in item 7 of the scope of patent application, the bare die testing process includes: The temperature control of the wafer on the wafer chuck is performed by the temperature control device. According to the bare die test process described in item 8 of the scope of patent application, the step of controlling the temperature of the wafer on the wafer chuck includes: The temperature of the wafer on the wafer chuck is measured by the at least one temperature sensing device or the temperature sensor of the probe card, so that the control unit is controlled by the temperature The device performs temperature control on the wafer on the wafer chuck. The bare die test process as described in item 9 of the scope of patent application, in which: If the circuit inspection is performed on the wafer on the wafer chuck, at least the wafer on the wafer chuck is measured by the at least one temperature sensing device of the probe card The temperature; and If the circuit detection of the wafer on the wafer chuck is not performed, at least the temperature of the wafer on the wafer chuck is measured by the temperature sensor.

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