TW200929537A - Backplane structures for solution processed electronic devices - Google Patents

Backplane structures for solution processed electronic devices Download PDF

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Publication number
TW200929537A
TW200929537A TW097139641A TW97139641A TW200929537A TW 200929537 A TW200929537 A TW 200929537A TW 097139641 A TW097139641 A TW 097139641A TW 97139641 A TW97139641 A TW 97139641A TW 200929537 A TW200929537 A TW 200929537A
Authority
TW
Taiwan
Prior art keywords
layer
bank
electrode structures
electrode
structures
Prior art date
Application number
TW097139641A
Other languages
English (en)
Chinese (zh)
Inventor
Yaw-Ming Tsai
Matthew Stainer
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200929537A publication Critical patent/TW200929537A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW097139641A 2007-10-15 2008-10-15 Backplane structures for solution processed electronic devices TW200929537A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98001907P 2007-10-15 2007-10-15
US12/250,788 US20090098680A1 (en) 2007-10-15 2008-10-14 Backplane structures for solution processed electronic devices

Publications (1)

Publication Number Publication Date
TW200929537A true TW200929537A (en) 2009-07-01

Family

ID=40379051

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097139641A TW200929537A (en) 2007-10-15 2008-10-15 Backplane structures for solution processed electronic devices

Country Status (5)

Country Link
US (1) US20090098680A1 (enExample)
JP (1) JP2011501361A (enExample)
KR (1) KR20100108510A (enExample)
TW (1) TW200929537A (enExample)
WO (1) WO2009052089A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012028278A1 (en) 2010-09-02 2012-03-08 Merck Patent Gmbh Interlayer for electronic devices
JPWO2012132292A1 (ja) * 2011-03-25 2014-07-24 凸版印刷株式会社 有機el表示素子、有機el表示装置、及びこれらの製造方法
WO2013159881A2 (en) 2012-04-25 2013-10-31 Merck Patent Gmbh Bank structures for organic electronic devices
US8658444B2 (en) 2012-05-16 2014-02-25 International Business Machines Corporation Semiconductor active matrix on buried insulator
WO2014044359A1 (en) 2012-09-21 2014-03-27 Merck Patent Gmbh Organic semiconductor formulations
US10326076B2 (en) * 2015-04-13 2019-06-18 Boe Technology Group Co., Ltd. Method of manufacturing display substrate, display substrate and display device
KR102704022B1 (ko) * 2019-09-23 2024-09-05 엘지디스플레이 주식회사 표시장치 및 이의 제조방법

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2604071B2 (ja) * 1991-05-14 1997-04-23 株式会社東芝 半導体装置の製造方法
JP3240858B2 (ja) * 1994-10-19 2001-12-25 ソニー株式会社 カラー表示装置
US5550066A (en) * 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
JP2694126B2 (ja) * 1995-02-06 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置及びその製造方法
US5994721A (en) * 1995-06-06 1999-11-30 Ois Optical Imaging Systems, Inc. High aperture LCD with insulating color filters overlapping bus lines on active substrate
JPH09127524A (ja) * 1995-11-06 1997-05-16 Sharp Corp 液晶表示素子
US6616496B1 (en) * 2000-06-14 2003-09-09 Ritdisplay Corporation Method of forming a polyimide-isolating wall of reverse-trapezoid cross-section with electric, thermal and mechanical stability
US6670645B2 (en) * 2000-06-30 2003-12-30 E. I. Du Pont De Nemours And Company Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
JP3793402B2 (ja) * 2000-07-28 2006-07-05 株式会社日立製作所 カラー液晶表示装置
US6515428B1 (en) * 2000-11-24 2003-02-04 Industrial Technology Research Institute Pixel structure an organic light-emitting diode display device and its manufacturing method
US7317205B2 (en) * 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
JP4362250B2 (ja) * 2001-10-16 2009-11-11 Nec液晶テクノロジー株式会社 液晶表示装置及びその製造方法
JP3705264B2 (ja) * 2001-12-18 2005-10-12 セイコーエプソン株式会社 表示装置及び電子機器
US6815723B2 (en) * 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
JP4047586B2 (ja) * 2002-01-10 2008-02-13 Nec液晶テクノロジー株式会社 横電界方式のアクティブマトリクス型液晶表示装置
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7098069B2 (en) * 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
JP3818261B2 (ja) * 2002-01-24 2006-09-06 セイコーエプソン株式会社 発光装置及び電子機器
JP3481232B2 (ja) * 2002-03-05 2003-12-22 三洋電機株式会社 有機エレクトロルミネッセンスパネルの製造方法
JP2003272871A (ja) * 2002-03-14 2003-09-26 Toshiba Corp 自己発光表示装置およびその製造方法
US7038239B2 (en) * 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989763B2 (ja) * 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) * 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP2004055461A (ja) * 2002-07-23 2004-02-19 Seiko Epson Corp 発光装置及びその製造方法、並びに電子機器
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
KR100504472B1 (ko) * 2002-09-05 2005-08-04 엘지전자 주식회사 유기 el 소자 및 그 제조 방법
CN100466285C (zh) * 2002-09-11 2009-03-04 株式会社半导体能源研究所 发光装置及其制造方法
WO2004029128A2 (en) * 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
CN1681869B (zh) * 2002-09-24 2010-05-26 E.I.内穆尔杜邦公司 用于电子器件用聚合物酸胶体制成的可水分散的聚苯胺
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004192935A (ja) * 2002-12-11 2004-07-08 Hitachi Displays Ltd 有機el表示装置
JP4176487B2 (ja) * 2003-01-15 2008-11-05 株式会社 日立ディスプレイズ 液晶表示装置
JP2004361491A (ja) * 2003-06-02 2004-12-24 Seiko Epson Corp カラーフィルタ基板の製造方法、エレクトロルミネッセンス基板の製造方法、電気光学装置及びその製造方法、並びに電子機器及びその製造方法
KR20050029426A (ko) * 2003-09-22 2005-03-28 삼성에스디아이 주식회사 칼라필터층 또는 색변환층을 갖는 풀칼라 유기전계발광소자
KR100552972B1 (ko) * 2003-10-09 2006-02-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
JP4165478B2 (ja) * 2003-11-07 2008-10-15 セイコーエプソン株式会社 発光装置及び電子機器
JP2005268202A (ja) * 2004-02-16 2005-09-29 Seiko Epson Corp 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、及び電子機器
JP3915810B2 (ja) * 2004-02-26 2007-05-16 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置、その製造方法、及び電子機器
US7351358B2 (en) * 2004-03-17 2008-04-01 E.I. Du Pont De Nemours And Company Water dispersible polypyrroles made with polymeric acid colloids for electronics applications
KR101003829B1 (ko) * 2004-04-30 2010-12-23 엘지디스플레이 주식회사 씨오티 구조 액정표시장치 및 그 제조 방법
KR20050112456A (ko) * 2004-05-25 2005-11-30 삼성에스디아이 주식회사 유기전계발광표시장치 및 그의 제조방법
JP2006059668A (ja) * 2004-08-20 2006-03-02 Seiko Epson Corp 有機エレクトロルミネッセンス装置及び有機エレクトロルミネッセンス装置の製造方法ならびに電子機器
KR100699996B1 (ko) * 2004-09-02 2007-03-26 삼성에스디아이 주식회사 회로 측정용 패드를 포함하는 유기전계발광표시장치와 그제조방법
US20060057478A1 (en) * 2004-09-15 2006-03-16 Samsung Electronics Co., Ltd. Panel for display device and manufacturing method thereof
JP2006286309A (ja) * 2005-03-31 2006-10-19 Toppan Printing Co Ltd 有機el表示装置とその製造方法
KR101145146B1 (ko) * 2005-04-07 2012-05-14 엘지디스플레이 주식회사 박막트랜지스터와 그 제조방법
KR20060125303A (ko) * 2005-06-02 2006-12-06 삼성전자주식회사 디스플레이장치 및 그 제조방법
US8563331B2 (en) * 2005-06-03 2013-10-22 E. I. Du Pont De Nemours And Company Process for fabricating and repairing an electronic device
KR101240656B1 (ko) * 2005-08-01 2013-03-08 삼성디스플레이 주식회사 평판표시장치와 평판표시장치의 제조방법
KR100754875B1 (ko) * 2005-11-07 2007-09-04 삼성전자주식회사 표시장치와 그 제조방법
JP4251329B2 (ja) * 2005-12-20 2009-04-08 カシオ計算機株式会社 表示装置及びその製造方法
KR101084166B1 (ko) * 2006-01-13 2011-11-17 삼성모바일디스플레이주식회사 픽셀 구조 및 이를 구비한 유기 전계 발광소자
US7482186B2 (en) * 2006-04-07 2009-01-27 Chunghwa Picture Tubes, Ltd. Method for fabricating active matrix organic light emitting diode display device and structure of such device
US7923719B2 (en) * 2006-04-28 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
KR101240657B1 (ko) * 2006-04-28 2013-03-08 삼성디스플레이 주식회사 표시장치와 그 제조방법
KR101163791B1 (ko) * 2006-05-16 2012-07-10 삼성전자주식회사 유기 전자소자의 전극형성 방법, 이에 의해 형성된 전극을포함하는 유기박막 트랜지스터 및 이를 포함하는 표시소자
JP4211804B2 (ja) * 2006-05-19 2009-01-21 セイコーエプソン株式会社 デバイス、膜形成方法及びデバイスの製造方法
KR101288427B1 (ko) * 2006-08-07 2013-08-07 삼성디스플레이 주식회사 표시 기판 및 그 제조방법
JP2008065300A (ja) * 2006-08-11 2008-03-21 Nec Lcd Technologies Ltd 液晶表示装置
US20080128685A1 (en) * 2006-09-26 2008-06-05 Hiroyuki Honda Organic semiconductor device, manufacturing method of same, organic transistor array, and display
KR101269002B1 (ko) * 2006-10-25 2013-05-29 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법
US7635864B2 (en) * 2007-11-27 2009-12-22 Lg Electronics Inc. Organic light emitting device

Also Published As

Publication number Publication date
US20090098680A1 (en) 2009-04-16
WO2009052089A1 (en) 2009-04-23
KR20100108510A (ko) 2010-10-07
JP2011501361A (ja) 2011-01-06

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