TW200924852A - Apparatus for anisotropic focusing - Google Patents
Apparatus for anisotropic focusing Download PDFInfo
- Publication number
- TW200924852A TW200924852A TW097133425A TW97133425A TW200924852A TW 200924852 A TW200924852 A TW 200924852A TW 097133425 A TW097133425 A TW 097133425A TW 97133425 A TW97133425 A TW 97133425A TW 200924852 A TW200924852 A TW 200924852A
- Authority
- TW
- Taiwan
- Prior art keywords
- deposition assembly
- nozzle
- aerosol
- channel
- gas
- Prior art date
Links
- 238000000151 deposition Methods 0.000 claims abstract description 42
- 239000000443 aerosol Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 47
- 230000008021 deposition Effects 0.000 claims description 39
- 239000003595 mist Substances 0.000 claims description 28
- 239000000725 suspension Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 1
- 239000012530 fluid Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 239000007788 liquid Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004163 cytometry Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000684 flow cytometry Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000013060 biological fluid Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009652 hydrodynamic focusing Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/025—Nozzles having elongated outlets, e.g. slots, for the material to be sprayed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
- B05B7/0441—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
- B05B7/0441—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber
- B05B7/0475—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber with means for deflecting the peripheral gas flow towards the central liquid flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/06—Spray pistols; Apparatus for discharge with at least one outlet orifice surrounding another approximately in the same plane
- B05B7/062—Spray pistols; Apparatus for discharge with at least one outlet orifice surrounding another approximately in the same plane with only one liquid outlet and at least one gas outlet
- B05B7/066—Spray pistols; Apparatus for discharge with at least one outlet orifice surrounding another approximately in the same plane with only one liquid outlet and at least one gas outlet with an inner liquid outlet surrounded by at least one annular gas outlet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/08—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point
- B05B7/0807—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point to form intersecting jets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
- B05B12/18—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area using fluids, e.g. gas streams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/08—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point
- B05B7/0884—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point the outlet orifices for jets constituted by a liquid or a mixture containing a liquid being aligned
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
- Coating Apparatus (AREA)
Description
200924852 九、發明說明:
相關申請案 本案要請求2007年8月31日申請之No· 60/969,445美國 5臨時專利申請案,名稱為“用於各異向性聚焦之裝置”的申 請權益’其說明書併此附送。 發明領域 本發明係有關使用不對稱的末端造型來進行材料流之 各異向性聚焦的領域。 10 【先前技術】 發明背景 習知技術概有關於使用氣動力的聚焦來進行液體和液 體微粒懸浮液之高解析度無罩沈積的裝置和方法。在最普 遍使用的實施例中,一氣懸體流會被聚焦並沈積在一平垣 15或非平坦的標靶上,而形成一圖案其會被熱性或光化學地 處理來達到接近所對應的鬆散材料之物理、光學及/或電的 性質。該製法係稱為M3D®(無罩中尺度材料沈積)技術,並 會被用來沈積嘴霧化的材料,其線寬係小於以傳統的厚骐 製法所沈積的線條之尺寸規格。沈積會被進行而無使用阻 20罩。且’該厘3]:)®製法能夠界定寬度小於Ιμπι的線條。 該M3D®裝置較好使用一氣懸體喷射沈積頭來形成— 環形傳送喷流’其包含一外鞘流及一在内之充滿氣懸體的 載體流。在該環形的氣懸體噴射製法中,該氣懸體流較好 係直接在噴霧化程序之後’或在通過一加熱器總成之後來 5 200924852 進入該沈積頭,並沿該裝置的軸線被導至該沈積碩孔产 其質篁輸出較好係藉-氣懸體質量控流器來控制。在, 積頭内部,該氣懸體流係較好最初藉通過一毫米尺寸7此 隙來被調直。出現的微粒流嗣較好與一環形的鞘氣纟的孔 該靭氣的功能係可消除該喷嘴的阻塞,並聚焦 Q, ^ …、氧懸雜 。該載氣和該鞘氣最普遍包含壓縮空氣或一種惰氣, 該一或二者亦可包含一修正的溶劑蒸氣含量。例如,火且 备£女 氣懸體是由一水溶液所形成時,水蒸汽可被添加於該栽= 或勒氣,以防止喷滴蒸發。 氣 10 該鞘氣較好由一在該氣懸體入口下方的勒氣入口 入,並與該氣懸體流形成一環狀流。如同該氣懸體載氣 該鞘氣的流率較好係藉一質量控流器來控制。所組成的嘴 流會以高速(約50m/s)穿過一導向一標乾的孔隙離開嗲噴 嘴,然後衝擊在該標靶上。此環狀流會將該氣懸體流聚焦 15在該標靶上,並容許尺寸約小於Ιμιη的特微細構被沈積。 圖案係藉相對於該標靶移動該沈積頭來形成。 有關於該M3D方法的習知技術曾揭露某些裴置,其通 常使用同軸勒流的技術。第1圖示出同心管的最簡單造型。 最内的霧管10會帶送在一氣懸體霧流中的霧化材料。該管 20 10係在該總成16的近端位置14安裝於外殼12。在該霧管10 與外殼12之間的環狀空間會形成共軸的鞘室18。鞘氣會在 近端位置20進入鞘室18,使得當該鞘氣已移行該鞘室18的 長度後,該氣體會建立一完全發展之與該霧流同轴的分層 流。該霧流和鞘流會在會聚區22會合,在該處會發生流體 200924852 動力的聚焦。該會聚區22的遠端錐部24會提供附加的造型 聚焦。尖端26可被添加於該總成16來提供附加的造型聚焦。 液流細胞計數法亦使用流體動力的聚焦來將—樣品流 組構成一極細的線其典型會被光學地分析。不像氣懸體與 5氣鞘m3d方法,該液流細胞計數法只使用液體,故能由液 • 體的不可壓縮性和以分層流聚焦樣品材料而來獲得利益。 該液體樣品(典型為一預處理的血液樣本,類似於該m3d® 方法中的氣懸體流)會被以一液鞘來聚焦,其典型係為去離 e 子水或鹽水溶液。典型地,該液體樣品會被聚焦至大約 10丨0^1111寬度,而使相關的生物細胞近乎丨丨員序地排列。由該聚 焦室中,該等細胞會直接進入一透明且典型為方形的管, 其具有一大約250μπι2的内方形腔室。該方形的流體腔室並 非被用來附加地聚焦該等細胞。在某些情況下,雷射光會 被導穿該流體腔室之-表面,且—光學檢測器會被設成相 15對於該雷射並另有-檢測器垂直於該雷射,而在該雷射束 通過該聚焦的樣品流時來檢測被反射和折射的光。由於該 ❹ I品係實質上為—順序的細胞串’故該等逐變的光圖案可 - 被分析,且不同的細胞能被檢出並計數。又,利用特殊的 設備則該等細胞流能被分類並沈積在分開的腔室中。該等 2〇聚焦、和光學腔室(典型稱為“流體腔室,,)的構造係泛知於該 流體細胞測計團體,而具有難以將該聚焦腔室對準於該光 學腔室之進口的缺點,以及另-高成本的缺點。在大部份 應用中,該等流體腔室必須被重清洗並再使用,而非被拋 棄。再使用的缺點是顯而易見的:交又污染及耗費時間。 200924852 流體細胞計數器亦已知因須泵抽、閥控及測計各種液流而 會尺寸較大且較複雜。當處理可能有害的生物流體時,其 將會極為困難且危險地來裝載、卸除和維修該等器材。 可拋棄的平面液體處理總成亦習知於流體細胞測計法 5 的領域中,如在No. 6,537,501美國專利中所舉例者。不必 設有許多的管和分開的閥,小液體處理匣將可被使用,其 係使用許多典型為塑膠材料的薄層。每一層皆可具有不同 的流體通路腔室,或僅為簡單的障壁來分開各別的通道。 當妥當地定向並組合時,一流體的“迴路板”會被造成,其 10 中流體能由一層流至另一層。以此疊層的方式,二維的聚 焦腔室會被用來將一樣品流體聚焦於一光學腔室中。 【發明内容3 發明概要 本發明係為一種材料沈積總成,包含一第一蓋板及一 15 第二蓋板,該等蓋板之一或兩者係包含一含有一材料之氣 懸體的入口,及一或多個勒氣入口; 一嵌入物密封於該二 蓋板之間,該嵌入物包含至少一氣懸體通道會與該氣懸體 入口呈流體連接,以及一各異向性喷嘴;其中該一或多個 鞘氣入口會呈流體連接於一鞘氣容腔,其係包圍該至少一 20 氣懸體通道之一出口及該喷嘴之一入口。該嵌入物較好包 含二鏡像板,當它們組合在一起時會形成該氣懸體通道和 喷嘴。該鞘氣較好會包圍並聚焦該鞘氣容腔和喷嘴中的氣 懸體。該鞘氣容腔較好是各異向性的。該喷嘴較好係為矩 形,且該氣懸體通道較好係為矩形並較好與該矩形噴嘴對 200924852 準。在沈積該材料時,該噴嘴較好係可相對於一基材移動, 且係邛擇地相對於該喷嘴與基材之相對移行方向呈斜傾。 該沈積總成較好更包含連接該一或多個鞘氣入口與該鞘氣 容腔的通道,該等通道係構製成可使鞘氣沿一實質上平行 5於該氣懸體通道中之氣懸體流向的方向移行進入該鞘氣容 腔内。 該嵌入物可擇地包含一末端片含有一氣懸體通道。該 末端片較好是可變形的,且該末端片的變形較好會改變該 氣懸體通道之一末端的一寬度。 10 該至少一氣懸體通道的至少一部份可擇地包含交替偏 移的分隔物,或係可擇地次分成多數的較小次通道等。該 等次通道較好係軸向地對齊,並排列成兩排,在第一排中 的次通道係偏離於在一第二排中的次通道。在第一排中的 次通道係可擇地相對於該第二排中的次通道呈斜向,於此 15情況了’在相鄰的次通道中之個別的氣懸體流較好會在離 開該氣懸體通道時交又。 本發明的目的’優點和新穎特徵及可應用性的其它範 圍等’有一部份將會配合所附圖式揭述於以下的詳細說明 中’且一部份將會在精習該技術者參閱以下說明之後輕易 2〇得知’或可藉實施本發明來學得。本發明的目的和優點可 利用特別指出於所附申請專利範圍中的器材和組合來被實 現和獲得。 圖式簡單說明 所附圖式係併附於並構成本說明書的一部份,乃示出 9 200924852 本發明之一或多個實施例,並與說明内容一起用來解釋本 發明的原理。該等圖式係僅供例示本發明之一或多個較佳 實施例,而非被視為限制本發明,其中: 第1圖為一使用同軸管之習知技術的奈米沈積頭; 5 第2圖為一矩形噴嘴構形之平面總成的分解示意圖; - 第3圖為一沒有管的平面總成之示意圖; . 第4圖為一沒有管的平面總成之另一實施例的示意圖; 第5圖為一解釋層流斷面廓形的圖表;
第6為一圖表乃示出由第5圖的層流斷面廓形所造成的 Q 10 沈積圖案; 第7圖為一說明液流平直化的圖表; 第8圖為一圖表乃示出許多小層流圖案緊靠在一起; 第9圖為一示意圖乃示出在露流通道内的多個方形通道; 第10圖為一示意圖乃示出在一不同於第9圖之造型的 15 露流通道内之多個通道;及 第11圖為一示意圖乃示出在一不同於第9圖和第10圖 之造型的霧流通道内之多個通道。 ❹ 【實施方式3 較佳實施例之詳細說明 20 本發明係有關使用不對稱的喷嘴造型來各異向性地聚 焦材料流的裝置及方法。一種構建此一裝置的直接方法係 押出二同軸的矩形管;類似第1圖的同心管構形來組合它 們,然後再類似於第1圖所示的設計來附接一較小的矩形末 端管。本發明較好利用平面總成,其會在通道設計提供甚 10 200924852 大的可調適性,並能構建一聚焦噴嘴陣列而具有共用的霧 氣、鞘氣和廢氣容腔。矩形噴嘴僅為以該等平面總成所可 能形成的末端造型之一例。 第2圖示出一會呈顯各異向性聚焦的矩形噴嘴平面總 5成之一實施例的分解圖。全部四層較好係以設在該二對準 •- 孔28中的釘銷來對準。該各層較好係僅利用在各孔3〇内之 六個螺絲的壓縮來密封在一起。為壓縮密封以供操作,所 有的配接表面皆必須被良好地加工,且較好被抛光。戈者 〇 若該標的物係能在壓縮時呈現一些變形,譬如一高硬度的 10塑膠基材,則大部份較小的瑕疵和刮痕等將會被包圍的變 形材料所密封。使用太軟的基材之風險係密封該總成所需 的壓縮可能會顯著地影響喷嘴的形狀。任何可密封該總成 的其它方法’包括但不限於墊片及/或黏劑,亦能被使用。 氣懸體霧會由霧氣口 32進入該總成。鞘氣會由鞘氣〇 15 34進入該總成。有兩個相同的霧氣通道板36和38,其當級 合成第3圖所示的鏡像構造時,會形成矩形的霧氣通道52。 ❹ 頂板4〇會封抵霧氣通道板36的表面42。底板44會封抵霧氣 通道板38的背面(不能見於第2圖中)。在第3圖中,當頂板4〇 和底板44(未示於第3圖)被組合時,勒氣容腔會被形成而圍 20 繞霧氣通道52之各侧面54、頂面56和底面(不能見到)。會聚 區58係為一主要是各異向性流體動力聚焦的區域。各異向 性造型的聚焦會發生在第2圖所示的區域48中。該流體會在 末端50離開該喷嘴。 一矩形末端係可供用於例如順形塗層的用途中,因其 11 200924852 :提供一寬且平坦的喷塗圖案。此末端會不對稱地聚_ 霧乳,故右該噴頭沿垂直於較長邊的方向移行,則會提俾 一較寬的線寬,而若該喷頭沿垂直於較短邊的方向移行了 則會提供—較窄的線寬。後者的圖案將會造成-增加的沈 5積厚度,因其係在本身上沈積較多的材料。此亦適用於_ 夕喷嘴的沈積頭之情況,其係以—類似的方式被使用。在 兩者之間的任何圖案寬度皆可藉相對於材料沈積方向斜轉 該喷頭來被達成。又,使用一矩形霧氣通道(取代-典型使 用的BU或方形通道),若定向成與該矩形噴嘴末端相同的 1〇方向,將可改良其沈積圖案效果的均-性。該鞘流係有須 要用來最小化末端阻塞的可能性和聚焦該霧氣懸體使當 沿該矩形噴嘴末端的細轴線之相同方向來沈積時可造成— 較小的沈積圖案(細線)。 第4圖示出一實施例,其中頂板60和底板61係幾乎相 15同,而霧氣通道62係藉將一末端片63中夾於二相同的鞘片 64、66之間來界定。此一喷嘴可容許同一平面總成被用於 多種的霧氣、氣體和廢氣,而一不同的末端片63層可被用 於不同的用途。此末端片能藉冲壓、機械加工、雷射切割、 線EDM、光蝕刻,或任何其它製造技術來製成。且,一單 20獨的末端片構件能由可變形的材料製成,譬如退火的不銹 鋼或高硬度的塑膠,其有一共同的霧氣通道寬度,例如lmm 寬。當在製造過程中,各對準銷65之間的距離可被設定來 達到霧氣通道62的遠端之所需寬度,以改變所沈積線條的 寬度。又’假設該各層之間的密封能被保持’或使用者能 12 200924852 接受妥當材料聚焦之一短暫中斷,則此末端將能僅藉移動 該等對準銷65來增加該末端寬度,而不必改變該喷嘴或旋 轉該喷嘴,即可沈積不同的線條寬度。 (喷流平直化) 5 在一喷嘴中的層流會造成材料的不均勻沈積,因為在 • 該喷流中央的材料速度係大於邊緣,如第5圖中所示。故比 邊緣更多的材料會沈積在該圖案的中央。當該基材係相對 於噴嘴移動時,一不均勻的沈積圖案將會如第6圖所示地形 Φ 成,其中有比沿著邊緣更多的材料會被沈積在該圖案的中 10央。但是,層流會比亂流更佳,因為後者典型會造成不良 的聚焦和不佳的邊緣界定。噴流平直化能改善層流的沈積 不均一性,其是較寬的圖案。喷流平直化在流體機械的領 域中乃十分習知’且係為一種已確立的方法可以減少大孔 管内的擾動,並能造成一更均勻的層流斷面廓形,如第7和 15 8圖所示。 在一種用以達到一層流斷面之“平直化,,的構造中,該 〇 寬的矩形霧氣通道係對準一寬的矩形末端。該霧氣通道會 被分成多數個較小的次通道68,如第9圖所示。該等次通道 可為矩形、圓形、方形或包含任何其它形狀。該霧氣通道 20亦可另擇地包含任何其它造型,譬如第10圖中所示的交替 偏移分隔物70,來達到一較均勻的喷流圖案。類似於第了和 8圖中所示的圖案,此構造會使沈積密度產生較小的起伏, 因為許多小層流圖案會互相緊靠地沈積。該等起伏能藉如 下所述而來減少:偏移於第一排來置設另一排的霧氣次通 13 200924852 道,而使在一排中之一通道的中間係正在下一排之相鄰通 道的壁之上方,如第11圖中所示。第11圖示出各次通道72 軸向地對齊。該局部化的均一性亦可藉令一排通道相對於 另一排呈斜傾,以使個別的喷流僅在當其進入該各異向性 5 聚焦區時相交而來進一步改良。 一不同於次分隔該霧氣通道的實施例係使用多個任何 .
形狀的相鄰霧氣管或通道,它們會被併排並饋供單一寬喷 嘴。在此實施例中,較好是單一的鞘氣容腔係共用於全部 的管或通道。 Q 10 雖本發明已特別參照該等較佳實施例來詳細說明,但 其它實施例亦能達到相同的成果。本發明的修正和變化將 可為精習於該技術者顯而易知,且在所附申請專利範圍中 係意圖涵蓋所有該等修正和等效物。所有引述於上的參考 資料、申請案、專利案、和公開案的完整揭露皆併此附送。 15 【圖式簡單說明】 第1圖為一使用同軸管之習知技術的奈米沈積頭; 第2圖為一矩形喷嘴構形之平面總成的分解示意圖; 〇 第3圖為一沒有管的平面總成之示意圖; 第4圖為一沒有管的平面總成之另一實施例的示意圖; 20 第5圖為一解釋層流斷面廓形的圖表; 第6為一圖表乃示出由第5圖的層流斷面廓形所造成的 沈積圖案, 第7圖為一說明液流平直化的圖表; 第8圖為一圖表乃示出許多小層流圖案緊靠在一起; 14 200924852 第9圖為一示意圖乃示出在露流通道内的多個方形通道; 第10圖為一示意圖乃示出在一不同於第9圖之造型的 露流通道内之多個通道;及 第11圖為一示意圖乃示出在一不同於第9圖和第10圖 之造型的霧流通道内之多個通道。 【主要元件符號說明】
10…霧管 12.. .外殼 14,20...近端位置 16.. .總成 18.. .鞘室 22,58...會聚區 24…遠端錐部 26…尖端 28.. .對準孔 30.. .孔 32.··霧氣口 34.. .鞘氣口 36,38...霧氣通道板 40,60...頂板 42.. .表面 44,61…底板 48.. .各異向性聚焦區 50···末端 52,62...霧氣通道 54.. .侧面 56.. .頂面 63.. .末端片 64,66…鞘片 65.. .對準銷 68,72···次通道 70.. .分隔物 15
Claims (1)
- 200924852 十、申請專利範圍: 1. 一種材料沈積總成,包含: 一第一蓋板與一第二蓋板,該等蓋板之任一或二者 包含一含有一材料之氣懸體的入口和一或多個勒氣入 5 口;及 ·. 一嵌·入物密封於該等蓋板之間,該傲入物包含至少 -. 一氣懸體通道係與該氣懸體入口呈流體連接,及一各異 向性喷嘴; 其中該一或多個鞘氣入口係與一鞘氣容腔呈流體 © 10 連接,該鞠氣容腔會圍繞一所述之至少一氣懸體通道的 出口與該喷嘴之一進口。 2. 如申請專利範圍第1項之沈積總成,其中該嵌入物包含 二鏡像板,其當組合在一起時會形成該氣懸體通道和該 噴嘴。 15 3.如申請專利範圍第1項之沈積總成,其中該鞘氣會包圍 並聚焦在該鞘氣容腔與該喷嘴中的氣懸體。 4. 如申請專利範圍第1項之沈積總成,其中該喷嘴係為矩形。 © 5. 如申請專利範圍第4項之沈積總成,其中該氣懸體通道 係為矩形並與該矩形喷嘴對準。 20 6.如申請專利範圍第1項之沈積總成,其中在該材料沈積 期間,該噴嘴係可相對於一基材移動。 7. 如申請專利範圍第6項之沈積總成,其中該喷嘴係可相 對於該噴嘴與該基材的相對移行方向呈傾斜。 8. 如申請專利範圍第1項之沈積總成,更包含有連接該一 16 200924852 或多個鞘氣入口與該鞘氣容腔的通道,該等通道係構設 成可使該鞘氣以一實質上平行於該氣懸體通道中之氣 懸體流向的方向移行進入該鞘氣容腔。 9.如申請專利範圍第1項之沈積總成,其中該嵌入物包含 5 一末端片含有一氣懸體通道。 .- 10.如申請專利範圍第9項之沈積總成,其中該末端片係可 變形的。 11.如申請專利範圍第10項之沈積總成,其中該末端片的變 〇 形會改變該氣懸體通道之一末端的寬度。 10 12.如申請專利範圍第1項之沈積總成,其中該至少一氣懸 體通道的至少一部份係次分成多數個較小的次通道。 13.如申請專利範圍第12項之沈積總成,其中該等次通道係 軸向地對齊並排列成兩排,在一第一排中的次通道會偏 離於在一第二排中的次通道。 15 14.如申請專利範圍第13項之沈積總成,其中在該第一排中 的次通道係對齊於該第二排中的次通道。 〇 15.如申請專利範圍第14項之沈積總成,其中在相鄰的次通 道中之個別的氣懸體流當離開該氣懸體通道時會交叉。 16. 如申請專利範圍第1項之沈積總成,其中該至少一氣懸 20 體通道的至少一部份包含交替偏移的分隔物。 17. 如申請專利範圍第1項之沈積總成,其中該鞘氣容腔是 各異向性的。 17 200924852 七、指定代表圈: (一) 本案指定代表圖為:第(2 )圖。 (二) 本代表圖之元件符號簡單說明: 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 28.. .對準孔 30.. .孔 32.. .霧氣口 34.. .鞘氣口 36,38...霧氣通道板 40…頂板 42.. .表面 44…底板 48.. .各異向性聚焦區 50.. .末端
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2008
- 2008-09-01 TW TW097133425A patent/TWI538737B/zh not_active IP Right Cessation
- 2008-09-02 KR KR1020107007089A patent/KR20100067098A/ko not_active Application Discontinuation
- 2008-09-02 US US12/203,069 patent/US9192054B2/en not_active Expired - Fee Related
- 2008-09-02 JP JP2010523195A patent/JP2010538277A/ja active Pending
- 2008-09-02 CN CN2008801135206A patent/CN101842166B/zh active Active
- 2008-09-02 WO PCT/US2008/075035 patent/WO2009029938A2/en active Application Filing
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WO2009029938A3 (en) | 2009-05-07 |
CN101842166A (zh) | 2010-09-22 |
TWI538737B (zh) | 2016-06-21 |
CN101842166B (zh) | 2013-10-09 |
US20090090298A1 (en) | 2009-04-09 |
KR20100067098A (ko) | 2010-06-18 |
WO2009029938A2 (en) | 2009-03-05 |
US9192054B2 (en) | 2015-11-17 |
JP2010538277A (ja) | 2010-12-09 |
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