TW200915401A - Method of preventing premature drying - Google Patents

Method of preventing premature drying Download PDF

Info

Publication number
TW200915401A
TW200915401A TW097117528A TW97117528A TW200915401A TW 200915401 A TW200915401 A TW 200915401A TW 097117528 A TW097117528 A TW 097117528A TW 97117528 A TW97117528 A TW 97117528A TW 200915401 A TW200915401 A TW 200915401A
Authority
TW
Taiwan
Prior art keywords
substrate
chemical
chemicals
saturated gas
cleaning
Prior art date
Application number
TW097117528A
Other languages
English (en)
Chinese (zh)
Inventor
Seok-Min Yun
Mark Wilcoxson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200915401A publication Critical patent/TW200915401A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning By Liquid Or Steam (AREA)
TW097117528A 2007-05-14 2008-05-13 Method of preventing premature drying TW200915401A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/803,501 US8021512B2 (en) 2007-05-14 2007-05-14 Method of preventing premature drying

Publications (1)

Publication Number Publication Date
TW200915401A true TW200915401A (en) 2009-04-01

Family

ID=40122021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117528A TW200915401A (en) 2007-05-14 2008-05-13 Method of preventing premature drying

Country Status (6)

Country Link
US (2) US8021512B2 (enExample)
JP (1) JP5265669B2 (enExample)
KR (1) KR101457732B1 (enExample)
CN (1) CN101808754B (enExample)
TW (1) TW200915401A (enExample)
WO (1) WO2008143798A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021512B2 (en) * 2007-05-14 2011-09-20 Lam Research Corporation Method of preventing premature drying
US8317934B2 (en) * 2009-05-13 2012-11-27 Lam Research Corporation Multi-stage substrate cleaning method and apparatus
US10269555B2 (en) 2015-09-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaning and apparatus
CN108140550B (zh) 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
CN110332765B (zh) * 2019-06-29 2021-06-18 汕尾市索思电子封装材料有限公司 一种电镀产品的干燥方法及干燥装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11344286A (ja) 1998-06-01 1999-12-14 Daikin Ind Ltd 基板乾燥方法
US7520284B2 (en) * 2000-06-30 2009-04-21 Lam Research Corporation Apparatus for developing photoresist and method for operating the same
JP2003243350A (ja) * 2002-02-14 2003-08-29 Tokyo Electron Ltd スクラブ洗浄装置におけるブラシクリーニング方法及び処理システム
JP3837720B2 (ja) * 2002-09-12 2006-10-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR100447285B1 (ko) * 2002-09-05 2004-09-07 삼성전자주식회사 기판 건조 장치
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
KR100626363B1 (ko) 2003-06-19 2006-09-20 삼성전자주식회사 기판 건조 장치
JP2005032915A (ja) * 2003-07-10 2005-02-03 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
CN1242039C (zh) * 2003-09-29 2006-02-15 中芯国际集成电路制造(上海)有限公司 半导体晶片的清洗液及清洗方法
US7353560B2 (en) * 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
CN1933759B (zh) * 2004-03-31 2010-12-15 兰姆研究有限公司 利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统
JP4324517B2 (ja) * 2004-07-02 2009-09-02 株式会社フューチャービジョン 基板処理装置
KR100672942B1 (ko) * 2004-10-27 2007-01-24 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 건조 장치 및 방법
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
US8021512B2 (en) * 2007-05-14 2011-09-20 Lam Research Corporation Method of preventing premature drying
US20090211596A1 (en) * 2007-07-11 2009-08-27 Lam Research Corporation Method of post etch polymer residue removal

Also Published As

Publication number Publication date
CN101808754A (zh) 2010-08-18
CN101808754B (zh) 2012-09-19
WO2008143798A1 (en) 2008-11-27
US20110294301A1 (en) 2011-12-01
JP5265669B2 (ja) 2013-08-14
US8277570B2 (en) 2012-10-02
US20090246372A1 (en) 2009-10-01
KR101457732B1 (ko) 2014-11-03
JP2010530130A (ja) 2010-09-02
KR20100019441A (ko) 2010-02-18
US8021512B2 (en) 2011-09-20

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