KR101457732B1 - 조기 건조를 방지하는 장치, 시스템, 및 방법 - Google Patents

조기 건조를 방지하는 장치, 시스템, 및 방법 Download PDF

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Publication number
KR101457732B1
KR101457732B1 KR1020097023644A KR20097023644A KR101457732B1 KR 101457732 B1 KR101457732 B1 KR 101457732B1 KR 1020097023644 A KR1020097023644 A KR 1020097023644A KR 20097023644 A KR20097023644 A KR 20097023644A KR 101457732 B1 KR101457732 B1 KR 101457732B1
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KR
South Korea
Prior art keywords
substrate
chemistry
saturated
chemical
liquid cleaning
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Expired - Fee Related
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KR1020097023644A
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English (en)
Korean (ko)
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KR20100019441A (ko
Inventor
석민 윤
마크 윌콕슨
Original Assignee
램 리써치 코포레이션
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Publication of KR20100019441A publication Critical patent/KR20100019441A/ko
Application granted granted Critical
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020097023644A 2007-05-14 2008-05-07 조기 건조를 방지하는 장치, 시스템, 및 방법 Expired - Fee Related KR101457732B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/803,501 US8021512B2 (en) 2007-05-14 2007-05-14 Method of preventing premature drying
US11/803,501 2007-05-14
PCT/US2008/005950 WO2008143798A1 (en) 2007-05-14 2008-05-07 An apparatus, a system and a method of preventing premature drying

Publications (2)

Publication Number Publication Date
KR20100019441A KR20100019441A (ko) 2010-02-18
KR101457732B1 true KR101457732B1 (ko) 2014-11-03

Family

ID=40122021

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097023644A Expired - Fee Related KR101457732B1 (ko) 2007-05-14 2008-05-07 조기 건조를 방지하는 장치, 시스템, 및 방법

Country Status (6)

Country Link
US (2) US8021512B2 (enExample)
JP (1) JP5265669B2 (enExample)
KR (1) KR101457732B1 (enExample)
CN (1) CN101808754B (enExample)
TW (1) TW200915401A (enExample)
WO (1) WO2008143798A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021512B2 (en) * 2007-05-14 2011-09-20 Lam Research Corporation Method of preventing premature drying
US8317934B2 (en) * 2009-05-13 2012-11-27 Lam Research Corporation Multi-stage substrate cleaning method and apparatus
US10269555B2 (en) 2015-09-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaning and apparatus
CN108140550B (zh) 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
CN110332765B (zh) * 2019-06-29 2021-06-18 汕尾市索思电子封装材料有限公司 一种电镀产品的干燥方法及干燥装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060132987A (ko) * 2004-03-31 2006-12-22 램 리써치 코포레이션 호환성 화학물을 이용하는 기판 브러시 스크러빙과 근접세정-건조 시퀀스, 근접 기판 제조 시퀀스, 및 이를구현하기 위한 방법, 장치, 및 시스템

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11344286A (ja) 1998-06-01 1999-12-14 Daikin Ind Ltd 基板乾燥方法
US7520284B2 (en) * 2000-06-30 2009-04-21 Lam Research Corporation Apparatus for developing photoresist and method for operating the same
JP2003243350A (ja) * 2002-02-14 2003-08-29 Tokyo Electron Ltd スクラブ洗浄装置におけるブラシクリーニング方法及び処理システム
JP3837720B2 (ja) * 2002-09-12 2006-10-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR100447285B1 (ko) * 2002-09-05 2004-09-07 삼성전자주식회사 기판 건조 장치
KR100626363B1 (ko) 2003-06-19 2006-09-20 삼성전자주식회사 기판 건조 장치
JP2005032915A (ja) * 2003-07-10 2005-02-03 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
CN1242039C (zh) * 2003-09-29 2006-02-15 中芯国际集成电路制造(上海)有限公司 半导体晶片的清洗液及清洗方法
US7353560B2 (en) * 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
CN1933759B (zh) * 2004-03-31 2010-12-15 兰姆研究有限公司 利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统
JP4324517B2 (ja) * 2004-07-02 2009-09-02 株式会社フューチャービジョン 基板処理装置
KR100672942B1 (ko) * 2004-10-27 2007-01-24 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 건조 장치 및 방법
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
US8021512B2 (en) * 2007-05-14 2011-09-20 Lam Research Corporation Method of preventing premature drying
US20090211596A1 (en) * 2007-07-11 2009-08-27 Lam Research Corporation Method of post etch polymer residue removal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060132987A (ko) * 2004-03-31 2006-12-22 램 리써치 코포레이션 호환성 화학물을 이용하는 기판 브러시 스크러빙과 근접세정-건조 시퀀스, 근접 기판 제조 시퀀스, 및 이를구현하기 위한 방법, 장치, 및 시스템

Also Published As

Publication number Publication date
CN101808754A (zh) 2010-08-18
CN101808754B (zh) 2012-09-19
WO2008143798A1 (en) 2008-11-27
US20110294301A1 (en) 2011-12-01
JP5265669B2 (ja) 2013-08-14
TW200915401A (en) 2009-04-01
US8277570B2 (en) 2012-10-02
US20090246372A1 (en) 2009-10-01
JP2010530130A (ja) 2010-09-02
KR20100019441A (ko) 2010-02-18
US8021512B2 (en) 2011-09-20

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