TW200901396A - Semiconductor device package having chips - Google Patents

Semiconductor device package having chips Download PDF

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Publication number
TW200901396A
TW200901396A TW096132151A TW96132151A TW200901396A TW 200901396 A TW200901396 A TW 200901396A TW 096132151 A TW096132151 A TW 096132151A TW 96132151 A TW96132151 A TW 96132151A TW 200901396 A TW200901396 A TW 200901396A
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TW
Taiwan
Prior art keywords
die
substrate
semiconductor device
device package
connection
Prior art date
Application number
TW096132151A
Other languages
English (en)
Inventor
Wen-Kun Yang
Jui-Hsien Chang
Chi-Chen Lee
Wen-Ping Yang
Original Assignee
Advanced Chip Eng Tech Inc
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Filing date
Publication date
Application filed by Advanced Chip Eng Tech Inc filed Critical Advanced Chip Eng Tech Inc
Publication of TW200901396A publication Critical patent/TW200901396A/zh

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)

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200901396 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種半導體裝置封裝之結構，特別是關 於一種具有偽晶粒功能之半導體封裝之結構，因此得以縮 減封裝尺寸及增進良率與可靠度。 【先前技術】 近年來’兩科技電子製造產業日益趨向更精緻 (feature-packed)與人性化（humanized)之電子產品。快速發 展之半導體技術更將半導體封裝導向縮減之尺寸，因而採 用多重接腳（multi-pin)、良好間距（fine pitch)、小型化 (mmnmzation)之電子元件（electrk c〇mp〇nents)及其相似 物。 由於一般封裝技術必須先將晶圓上之晶粒分割為個別 日日粒再將日日粒分別封裝，因此上述技術之製程十分費時。 由於晶粒封裝技術與積體電路之發展有密切關聯，因此封 (裝技術對於電子元件之尺寸要求越來越高。基於上述之理 由，現今之封裝技術已逐漸趨向採用球閘陣列封裝（ba gnd array ’ BGA)、覆晶球閘陣列封裝（fiip邮㈣ array，FC-BGA)、晶片尺寸封裝（cMp size package，csp卜 日日圓級封裝（Wafer Level package，WLp)之技術。應可理解 「晶圓級封裝（WLP)」係指晶圓上所有封裝及交互連接结 構二如同其他製程㈣，係於切割（singulati〇n)為個別晶粒 之則進仃。洲上㉛晶圓、級封裝（WLpm#，可產生具有 極J尺寸及良好電性之晶粒。根據上述晶圓級封裝（低p) 5 200901396 技術之優點，仍存在一些可能影響晶圓級封裝（WLp)技術 接受度（acceptance)之問題。一般而言，由於需要具有多重 晶粒之封裝結構，因此封裝結構之尺寸便隨多重晶粒之總 尚度而增加，而使得製程越驅複雜化。 第一圖係為具有堆璺晶粒（stacked dice)之習知封裝。 封裝結構100包含第一晶粒12〇具有第一連接墊卬如 bonding pads)116形成於其上，及第二晶粒122具有第二 f連接墊U8形成於其上，第一晶粒120與第二晶粒122係 形成於第-基底104之上，且具有第一連接塾114形成於 其上。封裝1〇〇更包含第三晶粒124具有第三連接墊112, 且$成於第基底104之下，及配置於具有第二接觸塾 (second Contact pads)11〇之第二基底1〇2之上。黏著層 (attached material)106與1〇7分別形成於第三晶粒124二 第一基底104之下方，而黏著層⑽形成於第一晶粒12〇 與第二晶粒U2之下方。再者，第三連接塾ιΐ2係利用連 (接線（bonding wires)126連接至第二接觸塾ιι〇，第一 電114係利用連接線128連接至第二接觸墊㈣，並且第 116 #第=€#線118係分別藉由連接線13〇與 了二別連接至第—接觸塾114。接著’保護層(Potion —45係形成以覆蓋第—晶粒^ 124以及鈈錫凸塊(s〇]der b_ps)b〇係形成於 一基底102之下®。田沐 、弟 , , "口此，封裝丨00之尺寸係為累積 acc:u二)之尺寸’且约略等於每-材料層尺寸之！ 和，然而上述封裝結構會隨著晶粒數目增加，而使製^ 6 200901396 趨衩雜且提高成本。 有鑑於上述，本發明提供一種具有偽晶粒功能（pseud〇 chips functi0n)之新穎結構，以克服上述習知技術之缺點。 【發明内容】 本發明係為美國專利申請第11/648,688號之部份連續 申 5月案（continue-in-part (CIP) application)之對應台灣申請 案，上述美國專利申請案之名稱為「Wafer Level Package ^ with Die Receiving Through-Hole and Method of the Same」’且申請曰為2〇〇?年i月3曰，在此一併作為參考。 在此，本發明將詳細地敘述一些實施例。然而，值得 注意的是除了這些明確之敘述外，本發明可以實施在其他 廣泛粑圍之實施例中，並且本發明之範圍不受限於上述實 施例，其當視後述之專利申請範圍而定。 本發明之一目的係在於揭露一種半導體封裝結構，可 提供具有偽晶粒功能之新穎結構。 ( 本發明之另一目的係在於揭露一種半導體封裝結構， 可提供半導體封裝之小型化結構（small f00t print)與薄型 (thinner)之結構。 本發明之又-目的係在於揭露一種半導體封裝結構， 可得到較佳之可靠度（reliability)。 本發明之再-目的係在於揭露一種半導體封裝結構， 可降低成本及提高良率（yield)。 本發明提供一種半導體裝置封裝之結構，包含第一其 底具有晶粒置入穿孔；第一晶粒具有第一連接墊及第二曰:曰 7 200901396 ，具有第二連接墊，且分別配置於晶粒置入穿孔之内；黏 著層形成於第一晶粒與第二晶粒間之間隙及第一基底之晶 粒置入穿孔之側邊；以及重佈線形成以將第一基底上之第 一連接墊分別耦合至第一連接墊與第二連接墊。 本發明提供一種半導體裝置封裝之結構，包含第一基 底'有第晶粒置入穿孔；第一晶粒具有第一連接墊及第 二晶粒具有第二連接塾，且分別配置於第—晶粒置入穿孔 之内黏著層形成於第—與第二晶粒間之間隙及第一 基底之第-晶粒置入穿孔之侧壁；重佈線形成以將第一基 底上之接觸墊为別耦合至第一連接墊與第二連接墊；保護 層形成於重佈線、第—晶粒、第二晶粒及第-基底之上； 基：具有第二晶粒置入穿孔與第二接觸墊，且形成於 一黏耆層之上及第—基底之下；以及第三晶粒具有第三 連接墊配置於第二晶粒置入穿孔之内。 本發明提供—種半導體裝置封裝之結構，包含第一基 „粒置入穿孔形成於其中；第一晶粒具有第一連‘ 塾及第-，粒具有第二連接墊，且分別配置於晶粒置入穿 孔之内，帛#著層形成於第—與第二晶粒間之間隙及第 :基底之第一晶粒置入穿孔之側壁；重佈線形成以將第一 土底上之第—接觸墊分_合至第-連接塾與第二連接 塾’保護層形成於重佈線、第一晶粒、第二晶粒及第一基 底之上’第二晶粒具有第三連接墊配置於第一基底之下； 以及第二基底具有第二接觸塾及電路線形成於其中及第三 晶粒之下。 200901396 【實施方式】 例之ί:述中，各式特定細節係用以提供本發明實施 。本發日謂配合其較佳實施例與後附之圖式 _:胡下’應理解者為本發明中所有之較佳實施例僅為例 並非用以限制本發明。熟知該項技術者亦應理解， 件或材料等。 ^特疋細即，或其他特定方法、元 根據本發明之一觀點，本發明提供一種半導體裝置之 水平⑽一e-by;side)結構，如第二、三、四圖所示。 第圖係為根據本發明之一實施例之半導體裝置封果 構之上視示意圖。封裂包含第一基底2〇2具 一曰曰粒220包含第—連接墊216，及第二晶粒加包 3連接墊218。黏著層2〇8係分別形成以環繞於第一 晶粒2 2 0與第二θ ^ λ ^ # ^ 一粒222之邊緣。重佈線（RDL)220係分別 形成以電性連接於H s 4 ^ ^接觸墊21〇與第一連接墊216之 間第接觸塾210與第二連接塾218之間以及第一連接 墊216與第二連接墊218之間。 多考第一圖，係為根據本發明之一實施例之半導體 置封裝200結構之判而-立门 ^ ★ 再面不思圖。在第三圖中，第一基底202 -有第日日粒置入穿孔（first die receiving through hole)203形成於其中’用以容納第一晶粒與第二晶粒 222灰穿孔203形成於第一基底2〇2由上表面穿透至下表 面。第-日日粒置入穿孔2〇3，穿孔2〇3係預先形成於第一 基底2〇2之内。黏著層係形成於第一與第二晶粒220 200901396 與222邊緣間及穿孔2〇3側壁之間隙間。第一接觸墊21〇(有 機基底）係形成於第一基底2〇2之上表面。 f 再者，介電層230形成於第一晶粒22〇、第二晶粒222 及第一基底202之上，以暴露第一連接墊216、第二連接 墊々218與第-接觸墊21〇之表面。重佈線⑽係形成 於第一連接塾216與第二連接墊218之間、第一接觸墊21〇 與第-連接墊216之間以及第一接觸墊21〇與第二連接塾 218之間，以彼此互相電性連接（第一接觸墊21◦與重佈線 (Rdl)226可同時形成）。保護層232係形成於第一與第二 晶粒220與222、介電層230及重佈層（RDL)226，以暴露 第-接觸墊210之表面。值得注意的是，在形成最㈣著 層後，重佈層（RDL)226係隱藏於其後。 金屬或導電層206係選擇性塗佈於第一晶粒置 2〇3側壁上，換言之，金屬層2〇6係形成於第一與第二曰曰 =220與222之間，且被黏著層2()8與第_基底2_^ 此，本發明可湘特殊黏著材料，特別是橡膠型黏 者才料’以增進晶粒邊緣與第一基底2〇2之晶粒置入穿孔 側壁間之黏著強度及應力吸收能力。 第-晶粒220與第二晶粒222係分別配置於第一 2二之卓第一晶粒置入穿孔2〇3。如熟知該項技術者所孰二 第-連接墊216係形成於第一晶粒22〇之上表面 連接墊218係形成於第二晶粒222之上表面。 第― 外力Γΐ層232係用以於進階封裝製程期間避免封裝受到 力傷D，因此於最終封裝製程後由最終黏著材料所覆 10 200901396 蓋，以作為保護層232。 在一實施例中，第一基底202之材料包含環氧樹脂型 FR5、FR4 或 BT(Bismaleimide triazine epoxy)。第—基底 202之材料亦包含金屬、合金、玻璃、陶瓷或印刷電路板 (PCB)。上述合金更包含Alloy 42 (42%鎳-58%鐵）或K〇var (29%鎳-17%钻-54%鐵）。再者，合金金屬較佳的係由Aii0y 42所構成，為一鎳鐵合金，其熱膨脹係數適用於小型化之 , 電子電路，且其包含鎳42%與鐵58%。上述合金金屬亦由 ' Kovar所構成，且其包含29%鎳、17%銘及54%鐵。 較佳的’第一基底2 0 2之材料係為有機基底，例如属_ 有已定義置入穿孔之環氧樹脂型FR5、BT、印刷電路板 (PCB)或具有預触刻電路之銅合金金屬，並且由於第一基 底202之熱膨脹係數（CTE)係與印刷電路板（PCB)(母板）之 熱膨脹係數（CTE)相符（matching)，因此本發明可提供較佳 可靠度結構。較佳的，具有玻璃轉換溫度點（Glass transiticm (temperature，Tg)之有機基底係為環氧樹脂型FR5或BT型 基底。亦可使用銅合金金屬（CTE約為16)。上述基底也包 含玻璃、陶瓷、矽。黏著層208係由矽橡膠彈性材料所構 成。 在一實施例中，黏著層208之材料包含矽氧烷聚合物 (Siloxane polymer，SINR)、WL5000、橡膠（rubber)、環氧 樹脂（epoxy resin)、液態化合物（liquid compound)及聚亞酿 胺（polyimide，PI)。黏著層208之材料亦包含金屬材料。 在另一實施例中，第三圖所顯示之重佈層（RDL)226 11 200901396 係為連接線（bonding wires)326以利電性連接，如第四圖所 示〇 在第四圖中’封裝結構300包含基底3〇2具有第一晶 粒320及第一晶粒322形成於預形成之第一晶粒置入穿孔 303之内。黏著層308係形成於基底3〇2與第一及第二晶 粒320及322間之間隙。金屬或導電層3〇6係選擇性形成 以填充基底302與黏著層308間之間隙。接觸墊31〇係分 別利用連接線326耦合至第一連接墊316與第二連接墊 318。連接線326係分別耦合至金屬或導電層3〇6及第一連 接塾316與第二連接墊318。接下來，保護層332係形成 於第-晶粒32G、第二晶粒322及連接線似之上，且暴 露接觸墊3 10之表面以利於電性連接。 弟五圖係為根據本發明之另一實施例顯示一半導體裝 置封裝結構400之剖面示意圖。值得注意的是，在此省略 相似7L件之說明與敘述，以避免模糊本發明。
V 一在第五圖中’封裝結構彻包含封裝結構200，如第 三圖所示，形成於具有第二接觸塾4〇4 =第一之上。封裝結構购 連接線·it成於第二基底4〇2之上。封裝400更包含 接、，在406 至第二接觸塾4()4與第一接觸塾加 利電性連接。換tI . 人 美底⑽，直 觸塾210形成且環繞於第― 土贷 之邊緣區域可電性耦合至形成於第二 之第二接觸藝4。4。本發明更包含形成最:：内 以覆蓋上述封裝，及最後之銲㈣彻係形成於^基^ 200901396 4〇2下表面之末端金屬墊。 根據本發明之一觀點，本發明更提供-種半導體裝置 ^疊入(咖lng)結構，如第六與七圖所示。下述之實施例 S偽晶粒（pseud。ehips)形成於第二基底上之結構 内梦：:，以作為本發明中之單一晶粒，由於晶粒堆疊 、、:冓t之晶粒尺寸差異，因而可避免連接線過長或過 二::題’偽晶粒不僅可減少封裝體之厚度與f—， 亦可間化連接線製程以增加封裝之良率與品質。 考第/、圖，係根據本發明另一實施例之半導體裝置 =襄結構5〇〇之剖面示意圖。封裝結構包含封裝結 00’如第三圖所示，形成於第二基底則之上且呈有 塾510形成於其中。再者，第二基底5〇9具有預 ^ —晶粒置入穿孔503，用以容納第三晶粒504且 於複數第二接觸墊5G5形成於其中。黏著層逝係形成 J第二晶粒504與第二基底5〇9之下，及黏著層5〇8係填 ::弟三晶粒504與第二基底5〇9間之間隙。金屬或導電 係形成於第二基底402與黏著層5〇8間之間隙，作 ' 連接穿孔（inter-connecting through hole)以耦合第- 基底表面至第二基底509下表面之訊號。弟一 人^ ”圖中，封裝結構500更包含複數連接線5丨2以 :至第二接觸墊51〇與第一接觸塾21〇，及複數連接線 514 VJi -έ®, 7* Α-Α- 口至弟二接觸墊51〇與第三接觸墊505。最終之保 ^層545係形成以覆蓋上述封裝，並且最終之銲錫層5咒 糸形成於第二基底509下表面之末端金屬墊上。值得注意 13 200901396 的是，在此省略相似元件之說明與敘述，以避免模糊本發 明。 參考第七圖，係為根據本發明另—實施例之半導體裝 置之封裝結構600之剖面示意圖。封裝結構_包含封裝 結構200，如第三圖所示，形成於具有第三接觸塾505之 第三晶粒504。第三晶粒5〇4係形成於黏著層5〇2之上， 並且第三晶粒504係形成於具有複數第二接觸塾6〇4及電 「路線形成於其中之第二基底6〇2上。在第七圖中，封裝結 構600更包含複數連接線612輕合至第二接觸塾_斑第 =觸塾训，及複數連接線614輕合至第二接觸塾_ ^第三接觸墊5〇5。形成最後之保護層⑷以覆蓋上述封 :端:f50係形成於第一下表面之 (二屬 於解決熱管理需求。 曰曰/立220、222與504 ’以利 錢明書中’應可理解在此省略相似元件 ==本發明:值得注意的是，上述結構之材料 *式亦可根據不=作=結構之材料咖 根據本發明之—顴 半導體|置結構，:X明提供—種具有偽晶粒之 晶粒)尺寸可根據多重：、叙 ）封裝結構。上述封裝(偽 提供一種忾层 日日；、之尺寸而作調整。再者，本發明 種間㈣裝結構，可增進可靠度與產率。並且，本 14 200901396 $明更提供-種具有偽晶粒之新穎結構，用以作為晶粒功 月匕且省略習知技術中之基底層，因而可縮減晶粒尺寸封褒 (/hip scale package)結構之尺寸，以及因使用低成本材料亦 可降低成本。因此，本發明所揭露之薄型晶粒尺寸封裝結 構可f供習知技術所無法預期之功效，並且解決習知技: J題i述結構可應用至晶圓或面板產業，亦可應用盘 潤飾至其他相關產業之應用。 一 本發明以較佳實施例說明如上，然其並非用以限定本 U戶之專利範圍。其專利保護當視後附之 明利乾圍及其等同領域而定。凡熟悉此領域之技蓺 均屬於：Γ 隹本專利精神或範圍内’所作之更動或潤錦7 广月所揭示精神下所完成之等效改變 應包含在下述之申請專利範圍内。 【圖式簡單說明】 以及:::::列詳細敘述，將可以更快地了解上述觀點 可以更並且藉由下面的描述以及附加圖式， 易了解本發明之精神。其中·· 面示ϊ圖圖係為根據習知技術之半導體裝置封褒結構之剖 第二圖係為根據本發明之一實 結構之上視示意圖。 π牛導《置封裝 第三圖係為根據本發明之一實 結構之剖面示意圖。 ^例之+導體裝置封裝 第四圖係為根據本發明之另一實施例之半導體褒置封 15 200901396 裝結構之剖面示意圖。 一實施例之半導體裝置封 第五圓係為根據本發明之另 裝結構之剖面示意圖。 第六圓係為根據本發明 裝結構之剖面示意圖。 第七圖係為根據本發明 褒結構之剖面示意圖。 之另一實施例之半導體裝 之另一實施例之半導體裝 置封 置封 【主要元件符號說明】 100封裴結構 102第二基底 104第一基底 106、107、1〇8 黏著層 110第二接觸墊 112第三連接塾 114第一接觸墊 116第一連接塾 118第二連接墊 120第一晶粒 122第二晶粒 124第三晶粒 126、128、130、132 連接線 145保護層 150焊錫凸塊 2〇〇封裝結構 16 200901396 202第一基底 203第一晶粒置入穿孔 204第二基底 206金屬或導電層 208黏著層 210第一接觸墊 216第一連接墊 218第二連接墊 220第一晶粒 222弟二晶粒 226重佈線 230介電層 232保護層 240黏著層 300封裝結構 302基底 303第一晶粒置入穿孔 308黏著層 3 10接觸墊 316第一連接墊 318第二連接墊 320第一晶粒 322第二晶粒 326連接線 17 200901396 400封裝結構 402第二基底 404第二接觸墊 406連接線 445保護層 450焊錫層 500封裝結構 502黏著層 503第二晶粒置入穿孔 504第三晶粒 505第三接觸墊 506金屬或導電層 508黏著層 509第二基底 510第二接觸墊 512、514連接線 545保護層 550焊錫層 600封裝結構 602第二基底 604第二接觸墊 612、614連接線 645保護層 650焊錫層 18

Claims (1)

  1. 200901396 十、申請專利範圍： 1. 一種半導體裝置封裝之結構，包含： 第一基底具有晶粒置入穿孔； 第一晶粒具有第一連接墊及第二晶粒具有第 二連接墊，且分別配置於該晶粒置入穿孔之 内； 黏著層形成於該第一晶粒與該第二晶粒間之 間隙及該第一基底之該晶粒置入穿孔之侧 邊；以及 重佈線形成以將該第一基底上之該第一連接 墊分別耦合至該第一連接墊與該第二連接墊。 2·如請求項1所述之半導體裝置封裝之結構，更 包含偽晶粒形成於該第一基底之上。 / 3.如請求項1所述之半導體裝置封裝之結構，更 包含介電層形成於該重佈線之上。 4.如請求項1所述之半導體裝置封裝之結構，更 包含保護層形成於該重佈線、該第一晶粒、該 第二晶粒及第一基底之上’且暴露該第一連接 墊之表面。 5.如請求項1所述之半導體裝置封裝之結構，更 19 200901396 包含一金屬或導電層形成於該第一基底之該 晶粒置入穿孔中之側壁。 6. 如請求項1所述之半導體裝置封裝之結構，其 中該重佈線係為連接線。 7. 如請求項1所述之半導體裝置封裝之結構，更 包含第二基底具有第二接觸墊與電路線形成 r' ' 於其中。 8. 如請求項7所述之半導體裝置封裝之結構，其 中該第二接觸墊係利用複數連接線而耦合至 該第一接觸墊。 9. 如請求項7所述之半導體裝置封裝之結構，更 | 包含黏著層形成且環繞該第一基底與該第二 基底。 10. 如請求項7所述之半導體裝置封裝之結構，更 包含銲錫金屬形成於該第二基底之下方，以作 為該封裝之端點接腳。 11. 如請求項1所述之半導體裝置封裝之結構，其 中該第一基底與該第二基底之材料包含環氧 20 200901396 樹月旨FR5、FR4、ΒΤ、金屬、合金、玻璃、矽、 陶瓷或印刷電路板（P C Β )。 12. 如請求項1所述之半導體裝置封裝之結構，其 中該黏著層之材料包含矽氧烷聚合物 (Siloxane polymer，SINR)、WL5000、橡膠 (rubber)、環氧樹脂（epoxy resin)、液態化合 物（liquid compound)或聚亞醯胺（polyimide， r ' PI)。 13. —種半導體裝置封裝之結構，包含： 第一基底具有第一晶粒置入穿孔； 第一晶粒具有第一連接墊及一第二晶粒具有 第二連接墊，且分別配置於該第一晶粒置入穿 孔之内； ( 第一黏著層形成於該第一與第二晶粒間之間 隙及該第一基底之該第一晶粒置入穿孔之侧 壁； 重佈線形成以將該第一基底上之接觸墊分別 麵合至該第一連接墊與該第二連接墊； 保護層形成於該重佈線、該第一晶粒、該第二 晶粒及該第一基底之上； 第二基底具有第二晶粒置入穿孔與第二接觸 墊，且形成於一第二黏著層之上及該第一基底 21 200901396 之下；以及 第三晶粒具有第三連接墊配置於該第二晶粒 置入穿孔之内。 14. 如請求項1 3所述之半導體裝置封裝之結構， 更包含複數連接線分別耦合至該第一接觸墊 與該第二接觸墊，及耦合至該第三連接墊與該 第二接觸墊。 f 15. 如請求項1 3所述之半導體裝置封裝之結構， 更包含第二黏著層形成於該第三晶粒與該第 二基底間之間隙。 16. 如請求項1 3所述之半導體裝置封裝之結構， 更包含金屬或導電層形成於該第二基底之第 二晶粒置入穿孔之側壁。 17. 如請求項1 3所述之半導體裝置封裝之結構， 其中該第一基底與該第二基底之材料包含環 氧樹脂型FR5、FR4、BT、金屬、合金、玻璃、 矽、陶瓷或印刷電路板（PCB)。 18. 如請求項1 3所述之半導體裝置封裝之結構， 其中該黏著層之材料包含矽氧烷聚合物 22 200901396 (Siloxane polymer，SINR)、WL5 000、橡膠 (r u b b e r)、環氧樹脂（e p o x y r e s i n)、液態化合 物（liquid compound)或聚亞醯胺（polyimide， PI) ° 19. 一種半導體裝置封裝之結構，包含： 第一基底具有晶粒置入穿孔； 一第一晶粒具有第一連接墊及一第二晶粒具 有第二連接墊，且分別配置於該晶粒置入穿孔 之内； 第一黏著層形成於該第一與第二晶粒間之間 隙及該第一基底之該第一晶粒置入穿孔之侧 壁； 重佈線形成以將該第一基底上之第一接觸墊 分別耦合至該第一連接墊與該第二連接墊； 保護層形成於該重佈線、該第一晶粒、該第二 晶粒及該第一基底之上； 第三晶粒具有第三連接墊配置於該第一基底 之下；以及 第二基底具有第二接觸墊及電路線形成於其 中及該第三晶粒之下。 20. 如請求項1 9所述之半導體裝置封裝之結構， 更包含連接線分別耦合至該第一接觸墊與該 23 200901396 第二接觸墊，及辆合至該第三連接墊與該第二 接觸墊。 21.如請求項1 9所述之半導體裝置封裝之結構， 更包含一第二黏著層分別形成於該第一基底 與該第三晶粒之間，及該第三晶粒與該第二基 底之間。 22. 如請求項1 9所述之半導體裝置封裝之結構， 其中該第一基底與該第二基底之材料包含環 氧樹脂型FR5、FR4、BT、金屬、合金、玻璃、 矽、陶瓷或印刷電路板（PCB)。 23. 如請求項1 9所述之半導體裝置封裝之結構， 其中該黏著層之材料包含矽氧烷聚合物 (Siloxane polymer，SINR)、WL5000、橡膠 (rubber)、環氧樹脂（epoxy resin)、液態化合 物（liquid compound)或聚亞酉篮胺（polyimide， PI)。 24
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