TW200849259A - NAND flash memory cell array and method with adaptive memory state partitioning - Google Patents
NAND flash memory cell array and method with adaptive memory state partitioning Download PDFInfo
- Publication number
- TW200849259A TW200849259A TW096149041A TW96149041A TW200849259A TW 200849259 A TW200849259 A TW 200849259A TW 096149041 A TW096149041 A TW 096149041A TW 96149041 A TW96149041 A TW 96149041A TW 200849259 A TW200849259 A TW 200849259A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- bit
- group
- bits
- data
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 340
- 238000000034 method Methods 0.000 title claims description 36
- 230000003044 adaptive effect Effects 0.000 title abstract description 11
- 238000000638 solvent extraction Methods 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 2
- 241000237536 Mytilus edulis Species 0.000 claims 2
- 235000020638 mussel Nutrition 0.000 claims 2
- 241001494479 Pecora Species 0.000 claims 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims 1
- 244000046052 Phaseolus vulgaris Species 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000007667 floating Methods 0.000 description 26
- 230000008859 change Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 210000002784 stomach Anatomy 0.000 description 2
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- 241000486679 Antitype Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/618,498 US7489548B2 (en) | 2006-12-29 | 2006-12-29 | NAND flash memory cell array with adaptive memory state partitioning |
US11/618,482 US7489547B2 (en) | 2006-12-29 | 2006-12-29 | Method of NAND flash memory cell array with adaptive memory state partitioning |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200849259A true TW200849259A (en) | 2008-12-16 |
Family
ID=39277290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096149041A TW200849259A (en) | 2006-12-29 | 2007-12-20 | NAND flash memory cell array and method with adaptive memory state partitioning |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2304733A1 (enrdf_load_stackoverflow) |
JP (1) | JP2010515199A (enrdf_load_stackoverflow) |
KR (1) | KR20090106461A (enrdf_load_stackoverflow) |
TW (1) | TW200849259A (enrdf_load_stackoverflow) |
WO (1) | WO2008082888A1 (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100953065B1 (ko) | 2008-03-14 | 2010-04-13 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자 |
JP5710474B2 (ja) * | 2008-07-01 | 2015-04-30 | エルエスアイ コーポレーション | フラッシュ・メモリにおける読み取り側セル間干渉軽減のための方法および装置 |
JP5259481B2 (ja) | 2009-04-14 | 2013-08-07 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2013164888A (ja) | 2012-02-10 | 2013-08-22 | Toshiba Corp | 半導体記憶装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679970B2 (ja) * | 2000-03-28 | 2005-08-03 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US7023739B2 (en) * | 2003-12-05 | 2006-04-04 | Matrix Semiconductor, Inc. | NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same |
JP4398750B2 (ja) * | 2004-02-17 | 2010-01-13 | 株式会社東芝 | Nand型フラッシュメモリ |
US7180775B2 (en) * | 2004-08-05 | 2007-02-20 | Msystems Ltd. | Different numbers of bits per cell in non-volatile memory devices |
-
2007
- 2007-12-12 JP JP2009544161A patent/JP2010515199A/ja active Pending
- 2007-12-12 WO PCT/US2007/087262 patent/WO2008082888A1/en active Application Filing
- 2007-12-12 EP EP07855106A patent/EP2304733A1/en not_active Withdrawn
- 2007-12-12 KR KR1020097010405A patent/KR20090106461A/ko not_active Ceased
- 2007-12-20 TW TW096149041A patent/TW200849259A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20090106461A (ko) | 2009-10-09 |
JP2010515199A (ja) | 2010-05-06 |
WO2008082888A1 (en) | 2008-07-10 |
EP2304733A1 (en) | 2011-04-06 |
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