TW200845834A - ARC recovery without over-voltage for plasma chamber power supplies using a shunt switch - Google Patents

ARC recovery without over-voltage for plasma chamber power supplies using a shunt switch Download PDF

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Publication number
TW200845834A
TW200845834A TW097105285A TW97105285A TW200845834A TW 200845834 A TW200845834 A TW 200845834A TW 097105285 A TW097105285 A TW 097105285A TW 97105285 A TW97105285 A TW 97105285A TW 200845834 A TW200845834 A TW 200845834A
Authority
TW
Taiwan
Prior art keywords
power supply
pulse wave
supply unit
shunt switch
parameter value
Prior art date
Application number
TW097105285A
Other languages
English (en)
Chinese (zh)
Inventor
Milan Ilic
Vladislav V Shilo
Robert Huff
Original Assignee
Advanced Energy Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Ind Inc filed Critical Advanced Energy Ind Inc
Publication of TW200845834A publication Critical patent/TW200845834A/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
TW097105285A 2007-02-22 2008-02-15 ARC recovery without over-voltage for plasma chamber power supplies using a shunt switch TW200845834A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/677,786 US8217299B2 (en) 2007-02-22 2007-02-22 Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch

Publications (1)

Publication Number Publication Date
TW200845834A true TW200845834A (en) 2008-11-16

Family

ID=39710440

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097105285A TW200845834A (en) 2007-02-22 2008-02-15 ARC recovery without over-voltage for plasma chamber power supplies using a shunt switch

Country Status (7)

Country Link
US (1) US8217299B2 (enExample)
EP (1) EP2113085B8 (enExample)
JP (1) JP2010519708A (enExample)
KR (1) KR101274514B1 (enExample)
CN (1) CN101641604A (enExample)
TW (1) TW200845834A (enExample)
WO (1) WO2008103600A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI576017B (zh) * 2014-08-25 2017-03-21 京三製作所股份有限公司 再生循環器、高頻電源裝置及高頻電力之再生方法

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US10355607B2 (en) 2014-08-25 2019-07-16 Kyosan Electric Mfg. Co., Ltd. Regeneration circulator, high-frequency power supply device, and high-frequency power regeneration method

Also Published As

Publication number Publication date
EP2113085B1 (en) 2019-06-12
US20080203070A1 (en) 2008-08-28
CN101641604A (zh) 2010-02-03
EP2113085A1 (en) 2009-11-04
WO2008103600A1 (en) 2008-08-28
EP2113085B8 (en) 2019-07-24
KR20090121301A (ko) 2009-11-25
US8217299B2 (en) 2012-07-10
KR101274514B1 (ko) 2013-06-13
JP2010519708A (ja) 2010-06-03
EP2113085A4 (en) 2015-05-06

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