KR101274514B1 - 션트 스위치를 사용한 플라즈마 챔버 파워 서플라이에 대한 과전압 없는 아크 회복 - Google Patents

션트 스위치를 사용한 플라즈마 챔버 파워 서플라이에 대한 과전압 없는 아크 회복 Download PDF

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KR101274514B1
KR101274514B1 KR1020097018460A KR20097018460A KR101274514B1 KR 101274514 B1 KR101274514 B1 KR 101274514B1 KR 1020097018460 A KR1020097018460 A KR 1020097018460A KR 20097018460 A KR20097018460 A KR 20097018460A KR 101274514 B1 KR101274514 B1 KR 101274514B1
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plasma
power supply
shunt switch
pulse
arc
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KR20090121301A (ko
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밀란 일릭
블라디슬라브 브이. 실로
로버트 후프
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어드밴스드 에너지 인더스트리즈 인코포레이티드
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
KR1020097018460A 2007-02-22 2008-02-15 션트 스위치를 사용한 플라즈마 챔버 파워 서플라이에 대한 과전압 없는 아크 회복 Expired - Fee Related KR101274514B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/677,786 US8217299B2 (en) 2007-02-22 2007-02-22 Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
US11/677,786 2007-02-22
PCT/US2008/054056 WO2008103600A1 (en) 2007-02-22 2008-02-15 Arc recovery without over-voltage plasma chamber power supplies using a shunt switch

Publications (2)

Publication Number Publication Date
KR20090121301A KR20090121301A (ko) 2009-11-25
KR101274514B1 true KR101274514B1 (ko) 2013-06-13

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KR1020097018460A Expired - Fee Related KR101274514B1 (ko) 2007-02-22 2008-02-15 션트 스위치를 사용한 플라즈마 챔버 파워 서플라이에 대한 과전압 없는 아크 회복

Country Status (7)

Country Link
US (1) US8217299B2 (enExample)
EP (1) EP2113085B8 (enExample)
JP (1) JP2010519708A (enExample)
KR (1) KR101274514B1 (enExample)
CN (1) CN101641604A (enExample)
TW (1) TW200845834A (enExample)
WO (1) WO2008103600A1 (enExample)

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JP2010519708A (ja) 2010-06-03
EP2113085A4 (en) 2015-05-06
EP2113085A1 (en) 2009-11-04
EP2113085B1 (en) 2019-06-12
EP2113085B8 (en) 2019-07-24
KR20090121301A (ko) 2009-11-25
WO2008103600A1 (en) 2008-08-28
US8217299B2 (en) 2012-07-10
TW200845834A (en) 2008-11-16
US20080203070A1 (en) 2008-08-28
CN101641604A (zh) 2010-02-03

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