TW200834198A - Display device and method of producing the same - Google Patents

Display device and method of producing the same

Info

Publication number
TW200834198A
TW200834198A TW096144087A TW96144087A TW200834198A TW 200834198 A TW200834198 A TW 200834198A TW 096144087 A TW096144087 A TW 096144087A TW 96144087 A TW96144087 A TW 96144087A TW 200834198 A TW200834198 A TW 200834198A
Authority
TW
Taiwan
Prior art keywords
display device
semiconductor film
holding capacity
polycrystalline semiconductor
producing
Prior art date
Application number
TW096144087A
Other languages
English (en)
Inventor
Toru Takeguchi
Takuji Imamura
Kazushi Yamayoshi
Tomoyuki Irizumi
Atsunori Nishiura
Motonami Kaoru
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200834198A publication Critical patent/TW200834198A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW096144087A 2006-12-07 2007-11-21 Display device and method of producing the same TW200834198A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006330528A JP4967631B2 (ja) 2006-12-07 2006-12-07 表示装置

Publications (1)

Publication Number Publication Date
TW200834198A true TW200834198A (en) 2008-08-16

Family

ID=39496941

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144087A TW200834198A (en) 2006-12-07 2007-11-21 Display device and method of producing the same

Country Status (5)

Country Link
US (1) US7754541B2 (zh)
JP (1) JP4967631B2 (zh)
KR (1) KR100915159B1 (zh)
CN (1) CN101196668B (zh)
TW (1) TW200834198A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552330B (zh) * 2011-03-31 2016-10-01 Ｊｏｌｅｄ股份有限公司 顯示裝置及電子單元

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US8692251B2 (en) * 2007-11-02 2014-04-08 Sharp Kabushiki Kaisha Circuit board and display device
KR101876819B1 (ko) * 2011-02-01 2018-08-10 삼성디스플레이 주식회사 박막트랜지스터 기판 및 그의 제조방법
JP2012208294A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器
KR101903671B1 (ko) 2011-10-07 2018-10-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN102646632B (zh) * 2012-03-08 2014-04-02 京东方科技集团股份有限公司 阵列基板及其制作方法和显示装置
CN102709328B (zh) * 2012-05-25 2013-07-03 京东方科技集团股份有限公司 一种阵列基板、其制造方法、显示面板及显示装置
CN103456740B (zh) * 2013-08-22 2016-02-24 京东方科技集团股份有限公司 像素单元及其制造方法、阵列基板和显示装置
CN105321825A (zh) * 2015-11-18 2016-02-10 武汉华星光电技术有限公司 低温多晶硅薄膜晶体管及其制作方法
CN106158882B (zh) * 2016-09-27 2019-02-26 厦门天马微电子有限公司 一种显示装置、显示面板、阵列基板及其制作方法
CN107170753B (zh) * 2017-05-10 2020-04-07 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
US11201176B2 (en) 2017-08-08 2021-12-14 Boe Technology Group Co., Ltd. Array substrate, display apparatus, and method of fabricating array substrate
JP6774464B2 (ja) * 2018-08-24 2020-10-21 株式会社Ｊｏｌｅｄ 半導体基板および発光装置

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JPH10153801A (ja) * 1990-04-11 1998-06-09 Seiko Epson Corp 液晶パネルの製造方法
JP3024620B2 (ja) 1990-04-11 2000-03-21 セイコーエプソン株式会社 液晶パネルの製造方法
JP2800956B2 (ja) * 1992-03-10 1998-09-21 シャープ株式会社 アクティブマトリクス基板
JPH1138439A (ja) * 1997-07-16 1999-02-12 Toshiba Corp アクティブマトリクス基板及びその製造方法並びにアクティブマトリクス型液晶表示装置
JPH11261076A (ja) 1998-03-13 1999-09-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
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JP2003121878A (ja) * 1998-11-26 2003-04-23 Seiko Epson Corp 電気光学装置及び電子機器
JP2000206566A (ja) 1999-01-18 2000-07-28 Toshiba Corp 薄膜半導体装置
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JP2002359252A (ja) * 2000-09-29 2002-12-13 Toshiba Corp 平面表示装置及びその製造方法
JP4739510B2 (ja) * 2000-12-15 2011-08-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
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JP2003075870A (ja) 2001-09-06 2003-03-12 Toshiba Corp 平面表示装置およびその製造方法
KR100971950B1 (ko) * 2003-06-30 2010-07-23 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 제조방법
JP4631255B2 (ja) * 2003-07-16 2011-02-16 セイコーエプソン株式会社 アクティブマトリクス基板、表示装置、及び電子機器
KR20070049740A (ko) * 2005-11-09 2007-05-14 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP2007173652A (ja) * 2005-12-23 2007-07-05 Mitsubishi Electric Corp 薄膜トランジスタ装置およびその製造方法、ならびに、該薄膜トランジスタ装置を備えた表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552330B (zh) * 2011-03-31 2016-10-01 Ｊｏｌｅｄ股份有限公司 顯示裝置及電子單元

Also Published As

Publication number Publication date
JP4967631B2 (ja) 2012-07-04
KR100915159B1 (ko) 2009-09-03
US7754541B2 (en) 2010-07-13
JP2008145578A (ja) 2008-06-26
CN101196668A (zh) 2008-06-11
CN101196668B (zh) 2010-12-22
US20080135909A1 (en) 2008-06-12
KR20080052460A (ko) 2008-06-11

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