TW200830046A - Negative resist composition for an electron beam and resist pattern formation method - Google Patents

Negative resist composition for an electron beam and resist pattern formation method Download PDF

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Publication number
TW200830046A
TW200830046A TW96129039A TW96129039A TW200830046A TW 200830046 A TW200830046 A TW 200830046A TW 96129039 A TW96129039 A TW 96129039A TW 96129039 A TW96129039 A TW 96129039A TW 200830046 A TW200830046 A TW 200830046A
Authority
TW
Taiwan
Prior art keywords
group
compound
electron beam
negative
alkyl group
Prior art date
Application number
TW96129039A
Other languages
English (en)
Chinese (zh)
Inventor
Kiyoshi Ishikawa
Yoshinori Sakamoto
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200830046A publication Critical patent/TW200830046A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW96129039A 2006-09-26 2007-08-07 Negative resist composition for an electron beam and resist pattern formation method TW200830046A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006260805A JP4772632B2 (ja) 2006-09-26 2006-09-26 電子線用ネガ型レジスト組成物およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
TW200830046A true TW200830046A (en) 2008-07-16

Family

ID=39229888

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96129039A TW200830046A (en) 2006-09-26 2007-08-07 Negative resist composition for an electron beam and resist pattern formation method

Country Status (3)

Country Link
JP (1) JP4772632B2 (fr)
TW (1) TW200830046A (fr)
WO (1) WO2008038448A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5413185B2 (ja) * 2008-12-25 2014-02-12 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法および硬化パターン
JP5393282B2 (ja) * 2009-06-17 2014-01-22 東京応化工業株式会社 ナノインプリント用組成物およびパターン形成方法
JP5381508B2 (ja) * 2009-08-27 2014-01-08 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3505990B2 (ja) * 1997-01-31 2004-03-15 信越化学工業株式会社 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
JP3918943B2 (ja) * 1997-08-06 2007-05-23 信越化学工業株式会社 高分子シリコーン化合物、レジスト材料及びパターン形成方法
JP4294521B2 (ja) * 2004-03-19 2009-07-15 東京応化工業株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4556639B2 (ja) * 2004-11-26 2010-10-06 東レ株式会社 ネガ型感光性樹脂組成物、それから形成された透明硬化膜、および硬化膜を有する素子

Also Published As

Publication number Publication date
JP4772632B2 (ja) 2011-09-14
JP2008083192A (ja) 2008-04-10
WO2008038448A1 (fr) 2008-04-03

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