TW200823303A - Method for production of copper alloy for electronic material - Google Patents

Abstract

Disclosed is a copper alloy for an electronic material, which has a satisfactory balance among strength, electric conductivity and bending workability to be used as a material for a terminal, a connector, a switch or a relay. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.00 to 2.50 mass% of Co and 0.20 to 0.70 mass% of Si, with the remainder being Cu and unavoidable impurities, and which has a mass-based concentration ratio between Co and Si (a Co/Si ratio) satisfying the following formula: 3.5 ≤ Co/Si ≤ 5 and an electric conductivity of 55% IACS or greater, preferably 60% IACS or greater. Preferably, the copper alloy may contain Cr in an amount of 0.05 to 0.50 mass%, have a content of carbon (an unavoidable impurity) of 50 ppm or less, and further contain at least one element selected form Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn and Ag in an amount of 0.001 to 0.300 mass%. Also disclosed is a method for producing the alloy, which comprises the steps of conducting melting/casting and subsequently conducting hot rolling and cold rolling, wherein a thermal treatment for heating to 700 to 1050 DEG C and then cooling at a rate of 10 DEG C/sec. Is conducted prior to the final cold rolling procedure.

Description

200823303 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a copper alloy for electronic materials, which has better strength and electrical conductivity as materials used for terminals, connectors, switches, and relay applications. Excellent bending workability balance. [Prior Art]

It is known that the Cu-Ni-Si alloy is a precipitation type copper alloy which precipitates in the matrix phase: Nh-Si-based or intermetallic compound, and the strength and electrical conductivity increase, and is also the same as the bismuth in the copper-gold. To make the mechanical strength, juice (Patent Document 1). It is known that the mechanical strength of the Cu_c〇-Si alloy is better than that of the Cu scratching Si alloy. (Patent Document 2, on the other hand, it is reported that in the Cu_Cr_Si alloy, Cn CM is the same as It is precipitated in the parent phase with the (tetra) compound or in the form of a monomer, and the strength is increased (Patent Document 3, page 3). Patent Document 1. Japanese Patent Publication No. 2-5_532477 Patent Document 2: Japan Japanese Patent Laid-Open No. 62-1_25, however, 'for the above-mentioned Cll-Cn Q·Mr. & upper CG_Sl alloy, due to the temperature for solution treatment (Co, Si Xim, the mouth of the valley, the valley temperature) is high, so it is difficult to completely perform the solution treatment and cannot obtain the required characteristics (Patent Document 1). Therefore, 5 200823303 was completely replaced by Co in the past. On the other hand, in the above-mentioned Cu-Cr-Si alloy, Cr easily forms a carbide which does not contribute to strength (c c), so that it is difficult to stably obtain the required strength. It is also impossible to obtain a large-scale Cr-based compound. Characteristic. Further, if the formation of the Cr-c Si-bonded to Cr will reduce the 'there is not excessive solid solution in the matrix to Cr and Si bonding leads to a disadvantage of significant reduction in electrical conductivity.

The present invention can achieve higher strength and conductivity than the prior copper alloy for electronic materials by adopting the following structure. (1) A copper alloy for an electronic material, which comprises: 1.00 to 2.50 mass% of c〇 and 〇·2〇~〇·7〇% by mass of si, and the remainder is composed of CU and unavoidable impurities, Further, the mass concentration ratio (Co/Si ratio) of Co to Si is 3.5 SCo/Si$5, and the conductivity is S (Internati〇nal Anneal Copper Standard) or more. (2) A steel alloy for electronic materials, characterized in that it contains ~. 2.50% by mass of Co, 0.05 to 0.50% by mass of Cr and 0.20 to 0·70% of Si' and the remainder is composed of Cu and unavoidable impurities, and the mass concentration ratio of Co to Si (c〇/Si The ratio is such that the conductivity is 60% IACS or more. (3) A steel alloy for electronic materials, characterized in that it contains =~. 2 5〇f 4 % C〇, 〇·05~〇·50% by mass of Cr and 〇·20~0·70 Berry% of Sl' Further, unavoidable impurity carbon is 50 ppm or less, and the rest It consists of Cu and unavoidable impurities, and the ratio of Co to Si of Co and Si is 2008. The mass ratio (Co/Si ratio) is 3.5$c〇/Si<5.

The V虿 rate is 60% iACS or more. (4) The copper alloy for electronic materials as described above, which further contains 0.001 to 0.300% by mass selected from the group consisting of Mg, p, As, Sb, B, Sn, Ti, Zr, A, Fe, and Ag. At least one of the groups. η

(5) A method for producing a copper alloy for an electronic material, which is a method for producing a steel alloy for an electronic material as described above, characterized in that: after the molten scale is formed, hot IL and cold rolling are performed, and before the final cold rolling Perform the following treatment, 'that is, after heating to the thief ~ (10) generation, listen to the above speed every second. 7 L implementation]

Co and Si addition amount:

Co forms an intermetallic compound with Si. Cu_c〇_si-based copper alloy maintains strength and achieves high conductivity compared with Cu-Ni-Si-based copper alloy. If Co and Si are added, if c〇 is not full! When the mass % and/or w is less than 〇.2〇% by mass, the required strength cannot be obtained, and when & exceeds 25〇 mass% and/or Si exceeds 0.70 mass%, the strength can be increased. # The conductivity is significantly reduced, which in turn deteriorates the thermal enhancement. Therefore, the amount of addition of c〇 and Si is such that c〇 is from 1〇〇 to 25% by mass, and is considered to be 〇 2〇 to 〇 mass. /. . Preferably, it is C....50~2·2〇% by mass, and si is 〇35~〇5〇% by mass.

Co/Si ratio: The characteristics can be further improved by making the weight ratio of Co to S1 in the alloy close to the Cc^Si concentration of the intermetallic compound 7 200823303 compound. When the weight concentration ratio is Co/Si &lt; 3.5, the conductivity is lowered due to the high Si concentration. On the other hand, when C〇/Si&gt;5, the conductivity is remarkably lowered due to the high concentration of C(), so it is not suitable for use as an electronic material. It is preferably 4 〇 < c〇/si &lt; 4 5. Conductivity (EC): The alloy of the present invention is used as a terminal, a connector, an opening, and a relay for a vehicle or a communication device that requires high conductivity and medium strength.

The material &apos;hence&apos; conductivity is 55% IACS or higher, preferably 6 G% IACs or more, 62% IACS or more. The conductivity is based on JISH 〇5〇5, and is determined by the value of /〇IACS. When the conductivity is less than 55% iacs, then it is not suitable for use as an alloy for electronic materials for the purpose of the present invention. The steel alloy having the electrical conductivity of the present invention can be produced by the following production method.

Cr addition amount:

Cr and no keys are harder than hard. The solid solution Si bond on Co is precipitated in the form of a Si-based compound in the mother phase ^ ^ ^----- 〇 1 m ^. As a result, the purity of the copper of the parent phase increases, which in turn increases the electrical conductivity. Private -. Further, since the precipitation of the Cr-Si-based compound is hardened, the strength is also improved. When 曰^田 added ϊ less than 0.05% by mass, the effect is small, exceeding 〇.5〇暂旦n/ + ^ ^ ^ Berry/〇日可, because there is no Cr-Si system or Cr monomer The form of precipitated solid, poor 'Cr ★ increased and led to a significant decrease in electrical conductivity, the amount of Cr dissolved in Γη士 ^ ^ ^ u at 1000 C is about 〇.5〇 mass%, so it is not solid solution Cr will have an adverse effect on the 4:^ oral work. Therefore, the amount of Cr added is 0.05 0.05 to 〇·5 〇 mass 0, 里/〇. It is preferably 〇·10 to 0.30% by mass 〇 Carbon content: When carbon is present

CrS easily forms Cr-C which does not contribute to strength. When the carbon content of the alloy 8 200823303 exceeds 50 Ppm, the required strength cannot be obtained. Further, when Cr-C is formed, Cr bonded to Si is reduced. Therefore, Si which cannot be bonded to Cr is excessively dissolved in the matrix phase, and the conductivity is remarkably lowered. Therefore, the carbon content is preferably 50 ppm or less, more preferably 3 〇 ppm or less. Examples of the method for controlling the carbon include a method of degreasing before melt casting, a method in which stone is not mixed into a raw material, or a method of melt-casting under vacuum or an inert gas (for example, Ar), and A method in which charcoal coating is not used in melt casting, and a device containing a carbonaceous member is not used. Add Mg, P, As, Sb, Be, B, Mn, Sn, Na, ^, ai,

Since at least one of Fe Zn and Ag does not form a compound, it has an effect of enhancing the solid solution strengthening effect and improving the properties. When the amount of the above element is less than the mass %, there is no effect added, and when it exceeds 〇 3〇〇 f $ %, the conductivity decreases. Therefore, the 'addition amount is 0.001 to 0.300 质 乂' is preferably 〇. 〇1 to 0.10% by mass 〇 The alloy of the present invention is used as a terminal for in-vehicle use and communication equipment requiring high conductivity and medium strength, and connection. . , switch, relay material, the strength of the tensile strength of the mouth

Mpa and (S, Yleld strength) are preferably 65 MPa or more, and more preferably 670 MPa or more. Manufacturing method: Compared with the Cu-Ni-Si alloy, the c degree is high, and the solid solution of the doped _Sl system a gold is difficult to be solution treated. That is, the total addition amount of Si is less than 20f, and the addition of S1 is performed (Co 10〇〇°c or less, and the total solid solution treatment of ^^ and Si^70 can be performed for complete solution treatment, then (4)^^ When the quality is (10), the shoulder is made to be l〇0 (TC or more, and further, 200823303)

When the amount of Co and the added amount is 2.5% by mass or more, the temperature is 1〇5〇. 〇 Above. When the temperature is in the vicinity of the melting point, it may cause melting in the solution treatment, and it is difficult to dissolve the Co and Si in an amount of 2.5% by mass or more in the copper. However, if the solution treatment is incomplete, the strength will decrease but the conductivity will increase. Therefore, in order to manufacture the copper alloy of the present invention, even

When the amount of addition of Co and Si is 2.5% by mass or more, if the temperature is lowered to a temperature lower than 70 valences and then cooled rapidly, a higher electrical conductivity can be obtained. At this time, the required strength can be secured by increasing the amount of addition of Co and Si, so that a steel alloy which achieves the balance of conductivity and strength characteristics of the present invention can be produced. ^ When the solution temperature is less than 7〇〇. In the case of hydrazine, the solution treatment is too insufficient to obtain the required strength, and the solution temperature exceeds 1 〇 5 Torr. When it is smashed, it may melt completely. Therefore, the solution temperature is 7 〇〇 〜1 〇 5 〇, preferably, when the addition amount of Co and Si is 120% or more and less than 2 〇〇 mass%, the solution temperature is 800 to 9 〇〇t: When the amount of c〇 and Si added is 2% or more and less than 2.50% by mass, the solution temperature is 9〇〇~1〇〇 (rc, c〇 and &gt; the amount of addition is 2.50% by mass or more When the amount is less than 3% by mass, the solution/chemical temperature is 1000 to 1050 ° C. If the cooling rate after the solution treatment is less than or equal to each other, a coarse Cr-based compound which does not contribute to strength is precipitated. Therefore, the cooling rate after heating must be 1 (rc or more per second, preferably 20 ° C or more per second. The above solution treatment can be carried out before final cold rolling to achieve the effect of the present invention. Cold rolling or 200823303 aging treatment may be performed before or after the above solution treatment. [Examples] The following descriptions of the conditions of the examples, but the embodiments of the present invention are capable of achieving the effects of the present invention. It is not limited to the following conditions. The production of the sample is in a high frequency melting furnace, in a vacuum or In an argon atmosphere, 2.50 kg of electrolytic copper or oxygen-free copper is melted in an alumina or magnesia crucible having an inner diameter of 110 mm and a depth of 230 mm. Add c〇, Cr, Si according to the composition of Table i or 2. Mg, Sn, Ag, Zn, and adjust the temperature of the molten copper to 13 () (rc, then use a mold (material · · cast iron) to cast the melt into 3〇χ6〇χ12〇mm. Grinding removal, hot rolling, cold rolling, and then heating to 7 〇〇. (:~1〇5〇. (:: after 2 每秒 per second. (:: into the cold part of the solid After the heat treatment by melting, the cold rolling and the processing degree of 丨〇~6〇% are repeated, and 250. (: heat treatment at 550 ° C, a flat plate having a thickness of 〇1 〇 mm is prepared. Various tests are performed on the obtained sheet. For the evaluation of the physical properties of the test piece, the physical properties of the test piece: In terms of strength, JIS 13B test piece is produced by using a press machine in such a manner that the stretching direction is parallel to the rolling direction. The tensile test according to JIS Z 2241 is used. The test piece was subjected to a test to determine the tensile strength of the tensile strength (in MPa). The measurement was performed by the 4-terminal method based on JIS Η 0505, and was expressed by 1 U% IACS. For the bending workability, the Wf curve test specified in JIS Η 3110 was carried out using a rectangular sample of the width of 1 〇 claw melon 200823303. G〇〇d Way and Bad Way, and the bending radius R/plate thickness t=1〇. For the curved sample, observe the presence or absence of cracks from the surface and section of the curved part by optical micromirror, Good Way and Bad The Way is evaluated as 〇 when no crack occurs, and X is evaluated when either or both of Good Way and Bad Way are cracked. Examples of the present invention are described in conjunction with Comparative Examples in Tables 1 to 3. Furthermore, the "one" in the table indicates that it has not been added. Table 1 shows the results of the Cu-Co-Si alloy, and the combination of the examples jyo has excellent strength, electrical conductivity (55 % i ACS or more) and bending workability. In Comparative Examples 11 and 12, since the amounts of Co and Si were not lower than the lower limit of the present invention or exceeded the upper limit, the strength (YS) was low, the electrical conductivity was low, and the bending workability was poor. In Comparative Examples 13 and 14, the c〇/Si ratios were not lower than the lower limit of the present invention or exceeded the upper limit, so that the electrical conductivity was low. In Comparative Example 15, since the c〇 summer and the Co/Si ratio were not lower than the lower limit of the present invention, respectively, the strength was low. In Comparative Example 16, the amount of Co exceeded the upper limit of the present invention, so the electrical conductivity was low. In Comparative Example 17, the amount of Si was less than the lower limit of the present invention and the c〇/si ratio exceeded the upper limit of the present invention, so that the electrical conductivity was low. Comparative example! In 8, the amount of si exceeds the upper limit of the present invention and the Co/Si ratio is less than the lower limit of the present invention, so the electrical conductivity is low. In Comparative Examples 19 and 20, the amount of the third metal such as Mg exceeded the upper limit of the present invention, respectively, so that the electrical conductivity was low and the bending workability was also inferior. Comparative Examples 21 to 31 were carried out under the conditions of sufficiently solid solution in the solution treatment, so that the electrical conductivity was low and did not fall within the scope of the present invention. 12 200823303 ♦ 2 shows the results of the Cu-Co-Cr-Si alloy, and the examples 8 to 45 have excellent strength and electrical conductivity, and the bending workability. Reference Examples 46 and 47 correspond to Examples 丨 and 2, and since no core was added, the conductivity was lower than that of Examples 32 to 45. In the seven-car case 48, the amounts of 'Co and si' are not below the lower limit of the present invention, respectively, so the strength is low. In Comparative Example 49, the amount of 'c〇 and Si exceeded the upper limit of the present invention, so that the conductivity was low and the bending property was poor. In Comparative Examples 5G and 51, the _, c 〇 / si ratios were respectively less than the lower limit of the present invention or exceeded the upper limit, so the electrical conductivity was low. In the case of the examples 52 and 53, the amount of Cr is less than the lower limit or the upper limit of the present invention, respectively, so that the dim rate is low, and the bending workability is also poor when the upper limit is exceeded. In Comparative Example 4, the ratio of C〇, Cr 1 and c〇/Si is less than the lower limit of the present invention. Therefore, in the case of the strength difference, in Comparative Example 5, the amount of C 及 and the amount of dr exceed the upper limit of the present invention, so the conductivity is low. Poor bending workability. In Comparative Example 56, since the amount of Cr and the amount of the Cr were less than the lower limit of the present invention and the Co/Si ratio exceeded the upper limit of the present invention, the electrical conductivity was low. In Comparative Example 57, the amount of Cr and the amount of Si exceeded the upper limit of the present month, respectively, and the C〇/Si ratio was less than the lower limit of the present invention, so that the electrical conductivity was low and the bending workability was poor. In Comparative Example 58, the amounts of Co, Cr and Si were not lower than the lower limit of the present invention, respectively, and the strength was poor. In Comparative Example 59, the amounts of Co, Cr and Si exceeded the upper limit of the present invention, respectively, and the electrical conductivity was low, and the bending workability was poor. In Comparative Examples 60 and 61, the amount of C exceeded the upper limit of the present invention, and the electrical conductivity was low and the bending workability was poor, and the strength was also inferior. In Comparative Examples 62 and 63, since the amount of the third metal such as Mg exceeded the upper limit of the present invention, the electrical conductivity was low and the bending workability was inferior. 13 200823303 Comparative Examples 64 to 76 were carried out under the conditions of sufficiently solid solution in the solution treatment, so that the electrical conductivity was low and did not fall within the scope of the present invention. Table 3 shows the results of changing the cooling rate after the solution treatment of Examples 32 to 34. In Examples 32, 33, and 34, the cooling rate was less than 10 C per second, so that the conductivity after the solution treatment increased, and the conductivity of the flat plate obtained after repeated cold rolling and heat treatment was also improved, but the strength was increased. decline. In Examples 32, 32", 33, 33", 34, and 34", the cooling rate was 1 〇t: per second. Therefore, in any of the examples, the strength, the electrical conductivity (60% IACS or more), and the writing were obtained. The result of excellent balance of workability. Therefore, the cooling rate after the solution treatment is preferably 丨〇 丨〇 or more. 200823303 [Table l]

No. Cu-Co-Si composition (% by mass) Solution temperature °C Characteristics Co Si Co/Si Other YS (MPa) EC (% IACS) Flexibility 1 1.3 0.31 4.2 — 900 670 58 〇2 1.8 0.43 4.2 — 950 715 57 〇3 2.4 0.57 4.2 — 1000 735 55 〇 4 4 1.3 0.36 3.6 — 900 675 56 〇 5 1.8 0.52 3.5 — 1000 715 55 〇 6 1.3 0.27 4.8 — 850 655 56 Example 7 1.8 0.38 4.7 — 950 702 55 〇8 1.8 0.43 4.2 O.lMg 950 745 55 〇9 1.8 0.43 4.2 0.05Sn 950 720 56 〇10 1.8 0.43 4.2 0.1 Ag 950 715 57 〇11 0.7 0.17 4.1 — 900 600 63 〇12 3.0 0.71 4.2 — 1000 768 48 X 13 1.8 0.60 3.0 — 1000 715 47 〇14 1.8 0.32 5.6 — 950 660 48 〇15 0.7 0.22 3.2 — 850 585 60 〇16 2.8 0.69 4.1 — 1000 750 43 〇17 1.8 0.17 10.6 — 950 660 50 〇18 1.8 0.75 2.4 — 1000 715 47 〇19 1.8 0.43 4.2 0.5Mg 950 788 41 X Ratio 20 1.8 0.43 4.2 0.3Mg, 0·2Ζη 950 772 41 〇 Compared with 21 1.3 0.31 4.2 — 950 755 51 Example 22 1.8 0.43 4.2 — 1020 790 50 〇23 1.3 0.31 4.2 — 960 720 51 〇24 1.8 0.43 4.2 — 1020 748 50 〇25 1.3 0.36 3.6 — 980 715 51 〇26 1.8 0.52 3.5 — 1050 755 50 〇27 1.3 0.27 4.8 — 950 695 51 〇28 1.8 0.38 4.7 — 1020 742 49 〇29 1.8 0.43 4.2 O.lMg 1020 785 49 〇30 1.8 0.43 4.2 0.05Sn 1020 760 51 〇31 1.8 0.43 4.2 O.lAg 1020 755 52 〇15 200823303 [Table 2]

No. Cu-Co-Cr-Si composition (% by mass) Solution temperature °C Characteristics Co Cr Si C Co/Si Other YS (MPa) EC (% IACS) Flexibility Example 32 1.3 0.20 0.31 0.003 4.2 — 900 680 63 〇33 1.8 0.20 0.43 0.003 4.2 — 950 728 62 〇34 2.4 0.20 0.57 0.003 4.2 — 1000 747 60 〇35 1.3 0.08 0.31 0.003 4.2 — 900 675 61 〇36 1.8 0.08 0.43 0.003 4.2 — 950 720 60 〇37 1.3 0.40 0.31 0.003 4.2 — 900 690 62 〇38 1.8 0.40 0.43 0.003 4.2 — 950 738 61 〇39 13 0.20 0.36 0.003 3.6 — 900 685 61 〇40 1.8 0.20 0.52 &lt;0.001 3.5 — 1000 730 60 〇41 1.3 0.20 0.27 &lt;0.001 4.8 — 850 670 61 〇42 1.8 0.20 0.38 0.003 4.7 — 950 715 60 〇43 1.8 0.20 0.43 0.003 4.2 O.lMg 950 758 60 〇44 1.8 0.20 0.43 0.003 4.2 0.05Sn 950 735 61 〇45 1.8 0.20 0.43 0.003 4.2 0.1 Ag 950 730 62 〇Reference Example 46 1.3 — 0.31 0.003 4.2 — 900 670 58 〇47 1.8 — 0.42 0.003 4.3 — 950 718 57 〇Comparative Example 48 0.7 0.20 0.17 0.003 4.1 — 900 615 68 〇49 3.0 0.20 0.71 0.003 4.2 — 10 00 778 53 X 50 1.8 0.20 0.60 0.003 3.0 — 1000 725 52 〇51 1.8 0.20 0.32 0.003 5.6 — 950 670 53 〇52 1.8 0.02 0.44 0.003 4.1 — 950 715 57 〇53 1.8 0.80 0.43 0.003 4.2 — 950 730 55 X 54 0.7 0.02 0.22 0.003 3.2 — 850 600 65 〇55 2.8 0.70 0.69 0.003 4.1 — 1000 760 47 X 56 1.8 - 0.02 0.17 0.003 10.6 — 950 670 55 〇57 1.8 0.70 0.75 0.003 2.4 — 1000 725 51 X 58 0.7 0.01 0.16 0.003 4.4 — 850 600 65 〇59 3.0 0.70 0.75 0.003 4.0 — 1000 780 45 X 60 1.3 0.20 0.31 0.020 4.2 — 900 600 59 X 61 1.8 0.20 0.43 0.050 4.2 — 950 648 57 X 62 1.8 0.20 0.43 0.003 4.2 0.5Mg 950 800 46 X 63 1.8 0.20 0.43 0.003 4.2 0.3Mg, 0·2Ζη 950 785 45 〇64 1.3 0.20 0.31 0.003 4.2 — 950 730 55 〇65 1.8 0.20 0.43 0.003 4.2 — 1020 765 54 〇66 1.3 0.08 0.31 0.003 4.2 950 715 55 〇67 1.8 0.08 0.43 0.003 4.2 — 1020 760 54 〇68 1.3 0.40 0.31 0.003 4.2 — 960 735 55 〇69 1.8 0.40 0.43 0.003 4.2 — 1020 778 54 〇70 1.3 0.20 0.36 0.003 3.6 — 980 725 54 〇71 1.8 0.20 0.52 0.003 3.5 — 1050 770 53 〇72 1.3 0.20 0.27 0.003 4.8 — 950 710 54 〇73 1.8 0.20 0.38 0.003 4.7 — 1020 755 54 〇74 1.8 0.20 0.43 0.003 4.2 O.lMg 1020 798 52 〇75 1.8 0.20 0.43 0.003 4.2 0.05Sn 1020 775 54 〇76 1.8 0.20 0.43 0.003 4.2 0.1 Ag 1020 768 55 〇16 200823303 [Table 3] Composition (% by mass) Cooling rate after solutionization (°C/s) Conduction after solutionization Rate (% IACS) Characteristics Co Cr Si C Co/Si YS (MPa) EC (% IACS) Flexibility Example 32' 1.30 0.20 0.31 0.003 4.2 5 29 570 68 〇Example 32&quot; 1.30 0.20 0.31 0.003 4.2 10 25 655 65 〇 Example 32 1.30 0.20 0.31 0.003 4.2 20 23 680 63 〇Example 33' 1.80 0.20 0.43 0.003 4.2 5 28 590 66 〇Example 33" 1.80 0.20 0.43 0.003 4.2 10 24 675 64 〇Example 33 1.80 0.20 0.43 0.003 4.2 20 22 728 62 〇Example 34' 2.40 0.20 0.57 0.003 4.2 5 27 620 65 〇Example 34" 2.40 0.20 0.57 0.003 4.2 10 22 670 62 〇Example 34 2.40 0.20 0.57 0.003 4.2 20 20 747 60 〇

[Simple description of the diagram] (None) [Explanation of main component symbols] (None) 17

Claims (1)

200823303 X. Application for Patent Park: A copper alloy for electronic materials, which is characterized by: containing Co., Ltd., ΜBerry% Co and 0.20~〇·7〇% by mass &amp; The impurity is composed of u4 and the mass concentration ratio (Co/Si ratio) of Co to S1 is 3.BCo/Sig, and the conductivity is 55% 1 milk or more. A copper alloy for a new type of electronic material, characterized in that it contains Co, which is ι5 〇 置 置 置 置 〜 〜 〜 〜 〜 〜 U 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及0.20 to 0.70% by mass And the remaining part is composed of Cu and unavoidable impurities, and the mass concentration ratio of C〇 to S1 (C〇/Si ratio 1 /c./C. 6〇%ΐΑ. above) is 3.5 to -5' conductivity It is a copper alloy for electronic materials, which is characterized by a mass of ～2 of Co 〇.〇5~〇'5〇 mass 0/. Cr and 〇2〇~〇7〇% by mass:, and further, the unavoidable impurity carbon is 5〇ppm or less, and the remaining part is composed of unavoidable impurities, and the mass concentration ratio of i CO Xiao Si (C〇 The /Si ratio is 3.BCo/Sg5, and the conductivity is 6〇% iAcs or more. 4. An alloy for an electronic material according to any one of the claims of the invention, wherein the step-by-step contains 〇·_~〇% by mass selected from the group consisting of 峋, p, As, Sb, Be, B, Μη At least one of a group of % χ·^ Sn Tl, Zr, A, Fe, Zn, and Ag. 5. A method for producing a steel alloy for an electronic material, which is used for manufacturing a copper alloy for an electronic material according to any one of the fourth to fourth aspects of the patent; wherein the hot rolling is performed after the molten casting and Cold rolling, and heat treatment after cooling to 700 ° c to 105 ° ° C in the final cold rolling W at a speed of more than steps per second. 18