200815175 九、發明說明 【發明所屬之技術領域】 本發明係關於一種半導體樹脂塑模用脫模薄膜，尤其 關於一種具模具（形狀）追從性優異，又可減低模具污染 的半導體樹脂塑模用脫模薄膜。 【先前技術】 半導體元件（晶片）一般爲保護、隔絕受到外部環境 (戶外的空热、污染物質、光、磁性、高頻率、衝擊）來 的作用，以樹脂（塑模樹脂）封住，而以收容晶片於內部 的半導體封裝的形態安裝於基板。代表例係使環氧樹脂等 之熱硬化性樹脂（塑模樹脂）加熱熔融後，移送至已安裝 半導體晶片之模具內，於塡充後、藉由使其硬化之轉移成 形（transfer molding )所形成者。塑膜樹脂中係與硬化劑 、硬化促進劑、塡充劑等同時，爲確保由模具所成形之半 導體封裝之順利的脫模性，故添加脫模劑。 另一方面，應要求半導體封裝的大幅生產性提高，模 具上附著塑模樹脂，有必須不斷清潔髒掉的模具的問題。 又，可對應大型的半導體封裝的成形之低收縮性塑模樹脂 的情形，藉由添加脫模劑亦無法得到充分的脫模性係爲問 題。因此，硏發出一種使用樹脂塑模用脫模薄膜（以下亦 單稱「脫模薄膜」）的技術，其以脫模薄膜覆蓋模具之樹 脂成形部（凹模面）的狀態，藉由注入塑模樹脂至模具內 ，於模具的凹模面可不用直接接觸塑模樹脂而形成半導體 -5- 200815175 封裝，得到一定的成果（例如，參照專利文獻1〜3等） 〇 但是，最近半導體元件的封裝所使用的塑模樹脂，從 對應環境的觀點而言，逐漸朝變更爲非鹵化塑模樹脂。又 ，對半導體之微細間距化、薄型化、層合晶片封裝化、及 朝LED用途的適用等，塑模樹脂之低黏度化或液狀樹脂 化係更一層精進。因此，半導體元件之樹脂塑模步驟中， 由高溫環境下之熔融塑模樹脂成之氣體或低黏度物質之產 生量增加，爲透過上述樹脂塑模用脫模薄膜，氣體或低黏 度物質係接觸局溫之模具，急劇產生模具污染。 又，經由脫模薄膜之模具內面的覆蓋，係可進行於真 空下使吸附支撐該脫模薄膜於模具內面，但脫模薄膜中的 低聚物等之揮發性成分移送至上述被吸附之模具側，有引 起模具污染的情形。 如此，使用脫模薄膜的情形中，薄膜安裝側之模具易 被污染，又一旦模具發生污染時，爲洗淨其模具而不得不 中止半導體的塑模步驟，有使半導體之生產效率下降的問 題。 又，從相關觀點而言，於上述專利文獻1〜2中有記 載爲減低透過之污染物質，於脫模薄膜的一面（與模具面 接觸一面）形成金屬或金屬氧化物的蒸鍍層。然而，該金 屬蒸鍍層等係爲直接與模具面物理上的接觸使用，由薄膜 面或薄膜之截面金屬粉等易剝離，於半導體樹脂塑模步驟 中的使用係被限制。 -6 - 200815175 又，專利文獻1〜2中，以二氧化碳氣體 定脫模薄膜之氣體透過性’但此係作爲評估由 產生之低黏度物質等的透過性之指標而言不爲 進而，對脫模薄膜要求比起目前爲止與塑 有更高的脫模性，但上述脫模薄膜，因沒有任 模後的樹脂表面上有產生脫模薄膜之脫模層的 脫模性不充分的問題。 φ 又，使用凹凸大的形狀之模具時，於樹脂 模薄膜被朝模具真空吸附，故該脫模薄膜係要 的該凹凸至其對應之周長爲止，有可充分延伸 狀）追從性。 專利文獻1:日本特開2002-361643號公 請範圍（申請項1〜申請項3 )、〔 0 0 0 2〕〜 專利文獻2:日本特開2004-795 66號公 請範圍（申請項1〜申請項3 )、〔 0002〕〜 _ 專利文獻3:日本特開2001-25 0 838號公 請範圍（申請項1〜6) 、〔〇〇〇2〕〜〔0032〕 【發明內容】 發明所欲解決之課題 本發明之目的係依據上述情形下強烈要求 以往氣體透過性充分地低，塑模樹脂引起之模 半導體樹脂塑模用脫模薄膜。 又’本發明之目的係模具污染物質之樹脂 的透過率規 塑模樹脂等 妥當。 模樹脂比具 何考量到塑 殘渣，而有 塑模前因脫 求追從模具 之模具（形 報（專利申 〔0028〕) 報（專利申 〔0015〕) 報（專利申 ，提供比起 具污染少、 等產生的低 200815175 黏度物質中，以更現實地對應之氣體透過率，於有效地抑 制該模具污染之脫模薄膜中規定需要的氣體透過性。 進而，本發明之目的，係提供具有比塑模樹脂更高的 脫模性之半導體樹脂塑模用脫模薄膜。 欲解決課題之手段 本發明，係提供以下構成的半導體樹脂塑模用脫模薄 膜。 〔1〕一種阻氣性半導體樹脂塑模用脫模薄膜，其爲 至少具有脫模性優良的脫模層（I)、與支持此之塑質支 持層（II )的脫模薄膜，其特徵爲上述塑質支持層（II) 於170°c中之200%伸長時強度爲iMPa〜50MPa，且該脫 模薄膜於 1 7 〇 °C中之二甲苯氣體透過性爲 5 X 1 0_15 ( kmol · m/ ( s · m2 · kPa))以下。 〔2〕如〔1〕記載之半導體樹脂塑模用脫模薄膜，其 中該脫模層（I )係由氟樹脂所形成。 〔3〕如〔2〕記載之半導體樹脂塑模用脫模薄膜，其 中該氟樹脂爲乙烯/四氟乙烯系共聚物。 〔4〕如〔1〕至〔3〕中任一項記載之半導體樹脂塑 模用脫模薄膜，其中該塑質支持層（II )係由乙烯/乙烯醇 共聚物所形成。 〔5〕如〔1〕至〔4〕中任一項記載之半導體樹脂塑 模用脫模薄膜，其中脫模層（I)的厚度爲3〜75 μηι，塑 質支持層（II)的厚度爲1〜700μηι。 -8- 200815175 〔6〕如〔1〕至〔4〕中任一項記載之半導體樹 模用脫模薄膜，其中脫模層（I)的厚度爲6〜30 μπι 質支持層（Π )的厚度爲6〜200μιη。 〔7〕如〔1〕至〔4〕中任一項記載之半導體樹 模用脫模薄膜，其中脫模層（I)的厚度爲6〜30μπι 質支持層（II)的厚度爲1(Τ〜100 μπι。 〔8〕如〔1〕至〔7〕中任一項記載之半導體樹 φ 模用脫模薄膜，其中該薄膜的至少一面經梨地加工（ fini sh ) 〇 〔9〕如〔8〕記載之半導體樹脂塑模用脫模薄膜 中該經梨地加工（satin finish)面的表面之算術表面 (an arithmetic surface roughness )爲 0.01 〜3·5μιη ° 〔1 〇〕如〔8〕記載之半導體樹脂塑模用脫模薄 其中該經梨地加工（satin finish)面的表面之算術表 度爲 0.1 5 〜2.5 μ m。 _ 〔 1 1〕如〔1〕至〔8〕中任一項記載之半導體樹 模用脫模薄膜，其中於該脫模層（I )與該塑質支持 . 11)之間具有接著層，且被接著一側之脫模層（I) 面施予表面處理。 發明效果 若依據本發明，可提供比起以往氣體透過性充分 ，塑模樹脂引起之模具污染少的半導體樹脂塑模用脫 膜。又’本發明中，爲模具污染物質之塑模樹脂等產 脂塑 ，塑 脂塑 ，塑 脂塑 satin ，其 粗度 膜， 面粗 脂塑 層（ 的表 地低 模薄 生的 -9- 200815175 低黏度物質中，以更現實地對應之氣體透過率，於有效地 抑制該模具污染之脫模薄膜規定必要的氣體透過性。進而 ，若依據本發明，可提供具有比塑模樹脂更高的脫模性之 脫模薄膜。又，本發明之脫模薄膜具模具（形狀）追隨性 優異。 因此’藉由適用本發明之脫模薄膜，於半導體之樹脂 塑模步驟中，模具污染少、因可充分地減低模具洗淨次數 ’故可相當地使半導體元件的樹脂塑模步驟的生產效率提 昇。 以下，詳細說明本發明。 本發明之半導體樹脂塑模用脫模薄膜1係基本上如圖 1表示地’其特徵爲至少由具有脫模性優良的脫模層（i )、與支持此之塑質支持層（II )所成。 (脫模層（I )) 於本發明之脫模薄膜1之脫模層（I )，係爲朝向半 導體元件被封住面而配置，成爲與被注入模具內之塑模樹 脂接觸之層’爲賦予對硬化後之塑模樹脂之充分的脫模性 之層。 作爲形成脫模層之樹脂，若爲具有對環氧樹脂等之塑 f吴樹目曰之脫模性者則無特別限定，但以具有脫模性優良之 氟樹脂所形成者爲特佳。 作爲氟樹脂，可例舉乙烯/四氟乙烯系共聚物（以下 ，稱「ETFE」。）、氯三氟乙烯系樹脂（以下，稱「 200815175 CTFE」。）、聚四氟乙烯（以下，稱r PTFe」。）、偏 氟乙嫌系樹脂（以下，稱r VdF」。）、氟乙烯系樹脂（ 以下，稱「VF」。）、四氟乙烯/六氟丙烯系共聚物（以 下，稱「FEP」。）、四氟乙烯/全氟（丙基乙烯醚）系共 聚物（以下，稱「PFA」。）、四氟乙烯/偏氟乙烯共聚物 及此等樹脂的複合物等。較佳爲ETFE、PTFE、FEP及 PFA、更佳爲ETFE。於ETFE之乙烯/四氟乙烯之共聚合 旲耳比係以70/30〜30/70爲佳、60/40〜35/65更佳、 5 5/45 〜40/60 最佳。 ETFE，又在不損及賦予脫模性之本質的特性範圍內 ’亦可含有基於其它單體之一種類以上之重複單位。 作爲其它的單體’可例舉丙烯、丁燒等之心嫌烴類； 以CH2 = CX(CF2)nY (此處，X及γ係獨立地爲氫或氟原子 、11爲1〜8之整數。）表示之化合物；偏氟乙烯、氟乙 燃、一氣乙儲（DFE)、三氟乙嫌（TFE)、五氟丙烯（ PFP)、六鏡異丁烯（HFIB)等之不飽和基中具有氫原子 之氟烯烴；六氟丙烯（HFP )、氯三氟乙烯（CTFE )、全 氟（甲基乙烯醚）（PMVE )、全氟（乙基乙烯醚）（ PEVE)、全氟（丙基乙烯醚）（PPVE)、全氟（丁基乙 烯醚）（PBVE)、其它之全氟（院基乙嫌醚）（PAVE) 等之不飽和基中不具氫原子之氟烯烴（但TFE除外。） 等。此等之其它的單體係可使用1種或2種以上。 依據其它的單體之重複單位的含有量係對全聚合單位 的莫耳數，以0.0 1〜3 0莫耳％爲佳、0 . 〇 5〜1 5莫耳％更佳 -11 - 200815175 、0.1〜1 〇莫耳％最佳。 本發明之脫模薄膜1中如圖1表示地，作爲脫模層（ I )之厚度，係對賦予脫模性以必需足夠的厚度爲佳。通 常厚度，係一般爲3〜75μηι、更佳爲6〜30μιη。 又，層合脫模層（I )於支持層（11)形成該脫模薄 膜1的情形中，如圖2表示地，與支持層（Π)相對，該 支持層中被層合·接著側的脫模層（I )之表面a，係爲使 φ 其接著性提昇，依照常法以施予表面處理爲佳。作爲表面 處理法，適用其自身公知的、於空氣中的電暈放電處理、 於有機化合物存在下的電暈放電處理、於有機化合物存在 下的電漿放電處理、惰性氣體、聚合性不飽和化合物氣體 及烴氧化物氣體所成的混合氣體中的放電處理等，尤其以 於空氣中的電暈放電處理爲佳。 (塑質支持層（II)) • 於本發明脫模薄膜之塑質支持層（II)係作爲其功能 一義地來說，層合爲脫模層（I)、支撐此後再賦予脫模 薄膜必要的剛性或強度等之機械的特性之層，但同時地， 使該脫模薄膜中只有脫模層（I)爲無法獲得充分的阻氣 性之層。 以往，專利文獻1〜2等中，爲減低透過之污染物質 ，於脫模薄膜之一面進行形成金屬或金屬氧化物之蒸鍍層 。然而，既如所述地經該金屬蒸鍍層之阻氣層係由於直接 與模具面物理上的接觸使用，由薄膜面或薄膜之截面金屬 -12- 200815175 粉等易剝離，有於半導體樹脂塑模步驟中的使用係被限制 之問題° 對此，於本發明中，在無所述之金屬蒸鍍層中，藉由 層合具有特定之機械的特性之特定的樹脂層所成之塑質支 持層（II )於直接脫模層使用，使脫模薄膜中賦予所欲之 機械的強度及阻氣性。依據本發明人等之新穎的見解，係 因此爲塑質支持層（II )本身意外地具有相當的阻氣性。 • 本發明之脫模薄膜1中，該塑質支持層（Π)於 170°C中之 200%伸長時強度爲 IMPa〜50MPa、更佳爲 2MPa 〜30MPa ° 當塑質支持層之強度比此過於大，該脫模薄膜之伸長 充分地消失。因此，使用凹凸大的形狀之模具時，藉由真 空吸附配置脫模薄膜於模具之際，於被真空吸附之脫模薄 膜與模具之間產生間隙，易成爲脫模薄膜之斷裂或漏樹脂 的主要因素，而不理想。 # 又，當塑質支持層之強度比此過小，因該支持層之厚 度、於模具內被加壓射出之塑模樹脂的壓力等，該塑質支 持層之樹脂加壓流動化，失去作爲支持層的功能。進而’ 過甚的情形，支持層的樹脂朝脫模薄膜外滲出成污染裝置 之主要因素。 如以上所述，塑質支持層（Π )藉由保持上述規定範 圍之伸長時強度’該脫模薄膜係於高溫下亦適度地具柔軟 、爲朝凹凸大的形狀之模具的模具（形狀）追從性優良者 -13- 200815175 作爲形成該塑質支持層，若爲具有如上述之機械的特 性者’則無特別地限定，可例舉例如作爲抑制結晶化之聚 對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚丁烯對苯二甲 酸酯等之聚酯樹脂；6-尼龍、6,6-尼龍、12-尼龍等之聚醯 胺；聚丙烯等之聚烯烴；丙烯酸樹脂、聚碳酸酯、聚醚醯 亞胺、偏二氯乙烯、乙烯/乙烯醇共聚物等可使用者。其 中亦以抑制結晶化之聚對苯二甲酸乙二酯及乙烯/乙烯醇 φ 共聚物爲佳。乙烯/乙烯醇共聚物中，乙烯/乙烯醇之共聚 合莫耳比以80/20〜5 0/5 0爲佳。 尤其，如凹凸大的形狀之模具等，脫模薄膜中尤其要 求模具（形狀）追從性的情形，作爲該塑質支持層，乙烯 /乙烯醇共聚物所構成者爲更佳。 構成支持層（II)之塑質薄膜或塑質薄片的厚度係無 特別限定，一般爲1〜700μιη、較佳爲6〜200μτη、進而較 佳爲10〜ΙΟΟμπι左右。 # 本發明之脫模薄膜1中，如上述地至少賦予脫模薄膜 1剛性之塑質支持層（11 )於1 7 0 °C中之2 0 0 %伸長時強度 (以下，有時只稱「伸長時強度」。），基本上規定爲 IMPa〜5 0MPa。又，ϋ於脫模層（I )的伸長時強度，與 塑質支持層（II )的關係，如以下地以選擇彼此異者爲佳 〇 亦即，適用脫模薄膜1於凹凸大的形狀之模具的情形 中，於樹脂封住前使該脫模薄膜朝模具真空吸附之際’尤 其要求該脫模薄膜追從模具之該凹凸至其對應之周長爲止 -14- 200815175 可充分延伸之模具（形狀）追從性，與脫模層（I )比較 ，以選擇更柔軟的塑質支持層（II )爲佳。一方面，又關 於該脫模薄膜’抑制伸長，要求減低薄膜皺折的情形，與 該脫模層（I )比較，若選擇更硬的塑質支持層（II )則 爲佳。 又，本發明中，作爲塑質支持層（II )，例如形成上 述塑質支持層之樹脂中，尤其與其脫模層（I)比較，藉 由選擇具有更優良的高溫阻氣性者，所形成的脫模薄膜1 係與單層（僅脫模層的）脫模薄膜比較，成爲同樣厚度下 亦具優良的高溫阻氣性者爲更佳。 (二甲苯氣體透過性） 本發明之脫模薄膜於1 7 0 °c之二甲苯氣體透過性爲 5xl0·15 ( kmol · m/ ( s · m2 · kPa ))以下之阻氣性半導體 樹脂塑模用脫模薄膜。 原本脫模薄膜之氣體透過性，係以作爲對於由爲塑模 樹脂之環氣樹脂等產生之低黏度物質等之該薄膜的透過性 來評估爲佳。以往，如前所述之專利文獻1〜2中記載地 ’藉由二氧化碳氣體的薄膜透過性進行評估，該低黏度物 質與二氧化碳氣體中作爲化學物質大幅地相異者，相關性 係不謂充分。對此本發明人等發現選擇將二甲苯蒸氣（氣 體）作爲模型化合物，藉由於1 7(TC中之該二甲苯氣體之 薄膜透過性’可與環氧樹脂等來源的物質之氣體透過性良 好地關聯。亦即，二甲苯氣體的透過係數，係爲對環氧樹 -15- 200815175 脂等的半導體樹脂塑模樹脂產生之有機物之阻性良好的指 標，發現此値愈小，表示半導體樹脂塑模步驟中的模具污 染更少。 因此，於本發明中，發現脫模薄膜的該二甲苯氣體透 過性於特定値’具體而言藉由於1 70°c中之二甲苯氣體透 過性爲 5xl0·15 ( kmol · m/ ( s · m2 · kPa))以下者，模具 的污染性可十分足夠之程度地減少。脫模薄膜的二甲苯氣 體透過性爲4xlCr15(kmol*m/(s*m2.kPa))以下者更 佳。 本發明中脫模薄膜之氣體透過性之測定方法係如後述 實施例記載，上層室與下層室之連通口（開口面）藉由透 過率測定薄膜（試料薄膜）閉鎖，保持於1 70 °C之上層室 中導入二甲苯氣體，通過該試料薄膜保持於真空狀態之下 層室中使二甲苯氣體透過，測定透過來的該二甲苯氣體之 濃度（壓力）之時間變化，由其正常狀態中之壓力變化算 出於170 °C環境下之二甲苯氣體之透過係數。 (脫模薄膜之層構成） 本發明之脫模薄膜之構成係如圖1表示的氟樹脂層等 脫模層（I )/以塑質支持層（II )之構成爲基本，如圖3 表不的氟樹脂層等脫模層（I) /塑質支持層（II) /亦可爲 氟樹脂層等脫模層（I )之構成的薄膜。此時，由於塑質 支持層（II)之兩面上形成脫模層（I)，故不需要區別 脫模薄膜之正反面，更容易進行模具上配置該脫模薄膜時 -16- 200815175 的作業。 於任一層構成中，亦可於氟樹脂層等脫模層（I)與 塑質支時層（II )之間有接著層。設置接著層的情形，如 前述地以被接著一側之脫模層（I )的表面施予表面處理 爲佳。作爲接著劑，例如亦可爲異氰酸酯系、聚胺甲酸酯 系、聚酯系等任一者。該接著層之厚度以0.1〜5μηι的範 圍爲佳、0.2〜2μπι的範圍爲更佳。 (各層厚度） 對本發明之阻氣性脫模薄膜之各層的厚度彙整記敘， 其各層的厚度係脫模層（I) 一般爲3〜75 μηχ、較佳爲6 〜30 μηι，塑質支持層（II) 一般爲 1〜700 μπι、較佳爲 6 〜200μηι，進而較佳爲10〜ΙΟΟμηι。 (梨地形成） • 本發明之脫模薄膜中，爲表面層的氟樹脂層等、及塑 質支持層上亦可施予梨地加工。施予梨地加工時的表面層 之表面的算術表面粗度，以0.01〜3·5μηι的範圍爲佳、 〇·15〜2.5 μηι的範圍更佳、表面粗度於此範圍則可防止成 形品的外觀不良，使產率提高的同時，具提昇成形品上標 不之批號的視認性效果優異。當表面層經梨地加工，脫模 薄膜被模具真空吸附時，因脫模薄膜與模具間的空氣容易 跑掉，模具吸附性提昇。 -17- 200815175 (進行塑模） 本發明之半導體樹脂塑模用脫模薄膜自 導體元件之樹脂塑模步驟中，可與以往的脫 使用。亦即，成形模具內之所定位置上，設 導體元件、與本發明的脫模薄膜，於閉模後 使吸附該脫模薄膜於模具面，若於覆蓋半導 面之半導體樹脂塑模用脫模薄膜之間，將塑: 形係佳。硬化後的塑模樹脂與本發明之脫模 被脫模。 【實施方式】 實施例 以下，例舉實施例具體地說明本發明， 術的範圍不被限定於此。又，本發明中之二 過係數係如以下地進行測定者。 〔一甲苯氣體透過係數（kmol.m/(s·!!!2· 定〕 依據JIS K 7 1 26- 1 987以差壓法進行測 驗溫度爲170。(：、試料氣體爲二甲苯氣體、 5kPa、試料薄膜之透過面直徑爲5〇min。 保持於l7〇t之上層室中導入二甲苯氣 率測定薄膜（試料薄膜），保持在真空狀態 二甲苯氣體透過，測定透過來的該二甲苯氣 身，係進行半 模薄膜同樣地 置應塑模之半 再真空吸入， 元件與模具 樹脂轉移成 薄膜係容易地 但本發明之技 甲苯氣體之透 kPa ))之測 定。但是，試 高壓側壓力爲 體，介由透過 之下層室中使 體之濃度（壓 -18- 200815175 力）之時間變化，由其正常狀態中之壓力變化算出於 17 0°C環境下之二甲苯氣體之透過係數。 〔實施例1〕 (1 )作爲脫模層（I)，使用厚度12μπι的ETFE薄 膜（旭硝子公司製、商品名：Fluon ETFE薄膜）。又， 該ETFE薄膜的一面（與支持層相對一面（接著面））上 ，爲使接著性提昇以40 W · min/m2之放電量施予電暈放電 處理。 又，作爲塑質支持層（II )，準備12μπι之乙烯/乙烯 醇共聚物（Kuraray公司製、商品名：EVAL EF-F )之薄 膜。該塑質支持層（11 )於1 7 0 °C中之2 0 0 %伸長時長度爲 5 Μ P a 〇 (2) 上述塑質支持層（II)之兩面上，以乾膜厚 0·4μπι換算塗佈聚酯接著劑（旭硝子公司製、商品名： AG-9014A)，使其乾燥，如圖2方式進行，進行使對向 的脫模層（I )與各各乾性層壓板，得到圖3表示之層構 成（（I ) / ( Π ) / ( I ))之脫模薄膜（以下，稱「脫模 薄膜1」）。 (3) 對所得之脫模薄膜1，藉由上述之方法，測定 於17 0°C環境下二甲苯之氣體透過係數時，爲2χ10_15( kmol · m/ ( s · m2 · kPa))。又，合倂測定脫模薄膜1於 170°C中之200%伸長時強度之結果示於表1。 (4 )如以下地進行測定與上述所得之脫模薄膜1之 -19- 200815175 塑模用環氧樹脂的脫模性。亦即，在脫模性薄膜1與 Kapton薄膜（聚醯亞胺薄膜、杜邦（DuPont )公司商標 )(對照薄膜）之間，裁斷成口之字的形狀之0.1mm厚 度的A1，設置作爲框（間隔物），此A1框內注入半導體 用塑模用環氧樹脂。175 °C環境下的平板擠壓中進行擠壓 ，脫模薄膜1與Kapton薄膜以此塑模用環氧樹脂進行接 著。（又，自脫模薄膜1之層構成，爲與環氧樹脂接觸而 配置其脫模層（I )。）切斷該半導體用塑模用樹脂接著 的脫模薄膜1成寬25mm的細長狀，一邊剝下此端部分， 一邊進行與半導體塑模樹脂180°剝離（peel)試驗時，該 剝離強度爲〇 ( N/m )。結果示於表1。 (5) 175°C環境下之轉移成形的下模具設置未塑模基 板，於上模具真空吸附脫模薄膜1後，關閉上下模具，半 導體塑模用環氧樹脂以7MPa、90 sec.進行轉移成形。以 上述條件重覆進行塑模注射，目視模具之污染進行確認時 ，就2000次爲止之重覆來觀察，完全不見模具污染。進 而超過2000次重覆時，產生了微小的模具污染。 (6 )保持具有凹部之模具於1 7 0 °C，使真空吸附脫模 薄膜1於該模具凹部時，在該脫模薄膜與模具之間幾乎沒 有間隙，該脫模薄膜1係可知具模具（形狀）追隨性非常 優良。 〔實施例2〕 (1 )作爲塑質支持層（II )，除了使用25μπι之聚對 -20- 200815175 苯二甲酸乙二酯薄膜（帝人杜邦薄膜公司製、商品名： Teflex FT3)之外，與實施例1同樣地進行求得脫模薄膜 (以下，稱「脫模薄膜2」）。 該塑質支持層（II)於170°C中之200%伸長時強度爲 2 5MPa ° (2 )對脫模薄膜2同實施例1 一樣進行，於1 7(TC環 境下測定二甲苯氣體透過係數，又於1 70 °C環境下測定 2 0 0 %伸長時強度。進而，於1 8 0 °剝離試驗測定剝離強度 〇 該脫模薄膜2之二甲苯氣體透過係數爲3χ1(Γ15( kmol · m/ ( s · m2 · kPa ))，於 170 °C 中之 200% 申長時強 度爲15MPa。 又，經180°剝離之剝離強度爲0 ( N/m)。結果示於 表1。 (3 )進而同實施例1 一樣進行，使用脫模薄膜2重 覆進行塑模注射時，就2000次爲止之重覆來觀察，完全 不見模具污染。進而超過2 0 00次重覆時，產生了微小的 模具污染。 〔比較例1〕 (1 )將厚度50μιη之單體ETFE薄膜（旭硝子公司製 、商品名：Fluon ETFE)直接作爲脫模薄膜樣本（以下’ 稱「脫模薄膜3」）於試驗中使用。測定該ETFE薄膜於 170°C中之200%伸長時強度時，爲5MPa。 -21 - 200815175 (2 )除使用此脫模薄膜3取代上述脫模薄膜1之外 ’其餘與實施例1 一樣地進行，於170°C環境下，測定二 甲苯氣體透過係數，又，同樣地進行180°剝離試驗。結果 不於表1。 (3 )進而同實施例1 一樣地進行，使用脫模薄膜3 重覆進行塑模注射時，未達2000次模具污染已爲明顯。 表1] 脫模薄膜 二甲苯氣體透過係數 (kmol · m/(s · m2 · kPa)) 於170°C環境下之 200%伸長時強度 (MPa) 18〇。剝離 試驗 (N/m) 實施例1 脫模薄膜1 2χ1045 5 0 實施例2 脫模薄膜2 3χ1〇·15 15 0 比較例1 脫模薄膜3 1χ10"14 5 0 如表1彙整了實施例1，2、及比較例1之結果很顯然 地’本發明之脫模薄膜1及2係如其180。剝離試驗（N/m )中所示的，確實具有與半導體塑模用環氧樹脂之脫模性 極爲優良，其二甲苯氣體透過係數爲2χ10·15、又3χ1〇-15 (kmol · m/ ( s · m2 · kP a ) ) 、1 χ 1 0-14 ( km ο 1 · m/ ( s · m2 · kPa ))於本發明中係比規定値小。因此，使用該 脫模薄膜1及2之轉移成形試驗，就2000次爲止之重覆 來觀察，完全不見模具污染。進而超過2000次重覆時， 產生了微小的模具污染，模具污染被充分地抑制。 對此，將ETFE薄膜本身作爲脫模薄膜使用時，雖脫 -22- 200815175 模性優良，但其二甲苯氣體透過係‘ kmol · m/ ( s · m2 · kPa ))比本發明中規 朝通過該薄膜之環氧樹脂成分之模具透過 使用該脫模薄膜3之轉移成形試驗中，珠 污染已爲明顯。 產業上可利用性 • 若依據本發明，可提供比起以往，係 地低、因塑模樹脂引起之模具污染少的脫 依據本發明，可提供具有與塑模樹脂之更 模薄膜。又，本發明之脫模薄膜係因不形 故沒有自薄膜兩端金屬粉等剝離的問題。 因此，藉由適用本發明之半導體樹脂 ，於半導體之樹脂塑模步驟中，模具污染 幅減少模具洗淨之次數，可使半導體元件 ® 產效率提昇，故其產業上之可利用性極大 本發明之半導體樹脂塑模用脫模薄膜 , 脂塑模用途上尤其爲適用，其它亦可適合 性之種種的用途上。 又，引用2006年8月18日提出申請 2006-223 565號說明書、專利申請範圍、 部內容於此，納入作爲本發明說明書之揭 【圖式簡單說明】 數爲 1 X 1 0·14 ( 定之値差，擔心 。如所預料的， i達2000次模具 氣體透過性十分 模薄膜，且，若 高的脫模性之脫 成金屬蒸鍍層， 塑模用脫模薄膜 十分地少、可大 之樹脂塑模之生 〇 ，係於半導體樹 適用於必需脫模 之曰本專利申請 圖式及摘要之全 不 ° -23- 200815175 [0 i]爲表示本發明之半導體樹脂塑模用脫模薄膜之 基本的層構成之說明圖。 [圖2]爲構成本發明之半導體樹脂塑模用脫模薄膜時 之說明圖。 [圖3]爲表示本發明之半導體樹脂塑模用脫模薄膜之 其它層構成之說明圖。 【主要元件符號說明】 1 :半導體樹脂塑模用脫模薄膜 I :脫模層 II :塑質支持層 a :與脫模層之塑質支持層接著之面 -24 -200815175 IX. The present invention relates to a release film for a semiconductor resin mold, and more particularly to a semiconductor resin mold having excellent mold (shape) followability and reducing mold contamination. Release film. [Prior Art] Semiconductor components (wafers) generally protect and insulate from the external environment (outdoor heat, pollutants, light, magnetism, high frequency, impact) and are sealed with resin (molding resin). The substrate is mounted on the substrate in a form of a semiconductor package in which the wafer is housed. In a representative example, a thermosetting resin (molding resin) such as an epoxy resin is heated and melted, and then transferred to a mold in which a semiconductor wafer is mounted, and after transfer, a transfer molding is performed by hardening. Former. In the plastic film resin, a mold release agent is added in order to ensure smooth release property of the semiconductor package formed by the mold, together with a curing agent, a hardening accelerator, a squeezing agent, and the like. On the other hand, the large-scale productivity of the semiconductor package is required to be improved, the mold resin is attached to the mold, and there is a problem that the dirty mold must be continuously cleaned. Further, in the case of a low shrinkage mold resin which is formed into a large-sized semiconductor package, it is a problem that sufficient mold release property cannot be obtained by adding a mold release agent. Therefore, a technique of using a release film for a resin mold (hereinafter also referred to as a "release film") which covers the resin molded portion (the concave surface) of the mold by a release film is used to inject the plastic. The mold resin is molded into the mold, and the semiconductor-5-200815175 package can be formed without directly contacting the mold resin on the concave surface of the mold, and a certain result is obtained (for example, refer to Patent Documents 1 to 3, etc.). The molding resin used for the packaging is gradually changed to a non-halogenated molding resin from the viewpoint of the environment. Further, the fineness of the semiconductor, the thinning, the lamination of the laminated wafer, and the application to the LED, and the like, the low viscosity of the mold resin or the liquid resinization is further improved. Therefore, in the resin molding step of the semiconductor element, the amount of gas or low-viscosity substance formed by the molten molding resin in a high-temperature environment is increased, and the gas or low-viscosity substance is contacted through the release film for the resin molding. The temperature of the mold, a sharp mold pollution. Further, by covering the inner surface of the mold of the release film, the release film can be adsorbed and supported on the inner surface of the mold under vacuum, but volatile components such as oligomers in the release film are transferred to the above-mentioned adsorbed surface. On the mold side, there is a situation in which the mold is contaminated. Thus, in the case of using a release film, the mold on the film mounting side is easily contaminated, and once the mold is contaminated, the molding step of the semiconductor has to be stopped in order to clean the mold, and there is a problem that the production efficiency of the semiconductor is lowered. . In addition, in the above-mentioned Patent Documents 1 to 2, a vapor-deposited layer in which a metal or a metal oxide is formed on one surface of the release film (on the side in contact with the mold surface) is described as a contaminant which is reduced in permeation. However, the metal vapor-deposited layer or the like is used in direct physical contact with the mold surface, and the metal powder or the like of the film surface or the film is easily peeled off, and the use in the semiconductor resin molding step is restricted. -6 - 200815175 Further, in Patent Documents 1 to 2, the gas permeability of the release film is determined by carbon dioxide gas. However, this is not an indication of the permeability of the low-viscosity substance or the like produced. The mold film is required to have a higher mold release property than the mold, but the release film has a problem that the release property of the mold release layer on which the mold release film is formed on the surface of the resin after the mold is not sufficient. φ Further, when a mold having a large concave-convex shape is used, the resin mold film is vacuum-adsorbed toward the mold, so that the release film is sufficiently stretchable until the corresponding unevenness reaches the corresponding circumference. Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-361643 (Application No. 1 to Application No. 3), [0 0 0 2]~ Patent Document 2: Japanese Patent Laid-Open No. 2004-795 No. 66 (Application No. 1) ～Application No. 3), [0002]~ _ Patent Document 3: Japanese Patent Laid-Open No. 2001-25 0 838 (Application Nos. 1 to 6), [〇〇〇2] to [0032] [Invention] OBJECT TO BE SOLVED BY THE INVENTION The object of the present invention is to provide a mold release film for a mold semiconductor resin mold which is required to have a sufficiently low gas permeability in the past, and which is molded by a mold resin. Further, the object of the present invention is that the resin of the mold-contaminated substance has a transmittance of a mold resin and the like. What is the ratio of the mold resin to the plastic residue, and there is a mold for chasing the mold before the mold is applied (Patent Application (0028)) (Patent Application [0015]) (Patent Application, Provides Comparison Among the low-viscosity materials of the low-grade 200815175 which are less polluted, etc., the gas permeability which is required to effectively suppress the contamination of the mold is determined by the more realistic gas permeability. Further, the object of the present invention is to provide A release film for a semiconductor resin mold having a mold release property higher than that of a mold resin. The present invention provides a release film for a semiconductor resin mold having the following constitution. [1] A gas barrier property A release film for a semiconductor resin mold, which is a release layer (I) having at least excellent release property, and a release film supporting the plastic support layer (II), which is characterized by the above-mentioned plastic support layer ( II) The strength is iMPa~50MPa at 200% elongation at 170 ° C, and the xylene gas permeability of the release film at 17 ° C is 5 X 1 0_15 ( kmol · m / ( s · m2 ) · kPa)) below. [2] as in [1] A release film for a semiconductor resin mold, wherein the release layer (I) is formed of a fluororesin. [3] The release film for a semiconductor resin mold according to [2], wherein the fluororesin is ethylene/ The release film for a semiconductor resin mold according to any one of [1] to [3] wherein the plastic support layer (II) is an ethylene/vinyl alcohol copolymer. [5] The release film for a semiconductor resin mold according to any one of [1] to [4] wherein the release layer (I) has a thickness of 3 to 75 μm, and a plastic support layer (II) (6) The release film for a semiconductor tree mold according to any one of [1] to [4] wherein the release layer (I) has a thickness of 6 to 30. The release film of the semiconductor tree mold according to any one of [1] to [4] wherein the release layer (I) has a thickness of 6 or more. 〜30μπι The thickness of the support layer (II) is 1 (Τ~100 μπι. [8] The semiconductor tree according to any one of [1] to [7] a mold release film in which at least one side of the film is processed by a pear (fini sh) [9], and the surface of the satin finish surface of the release film for a semiconductor resin mold described in [8] The arithmetic surface roughness is 0.01 to 3·5 μιη ° [1 〇] The semiconductor resin mold described in [8] is used for mold release, wherein the arithmetic surface of the surface of the satin finish surface is 0.1 5 to 2.5 μ m. The release film for a semiconductor tree mold according to any one of [1] to [8] wherein the release layer (I) and the plastic support (11) have an adhesive layer. And the surface of the release layer (I) on the next side is subjected to surface treatment. According to the present invention, it is possible to provide a film for a semiconductor resin mold which is less than the conventional gas permeability and which has less mold contamination by the mold resin. Further, in the present invention, a mold resin such as a mold-contaminating substance is produced by a resin, a plastic mold, a plastic resin, a satin film, a rough film, a surface rough plastic layer (the surface of the mold is low-thinness -9-200815175) Among the low-viscosity substances, the gas permeability is more realistically determined, and the gas permeability of the release film which effectively suppresses the contamination of the mold is regulated. Further, according to the present invention, it is possible to provide a higher resin than the mold resin. Further, the release film of the present invention has excellent mold (shape) followability. Therefore, by applying the release film of the present invention, mold contamination is less in the resin molding step of the semiconductor. Since the number of times of cleaning the mold can be sufficiently reduced, the production efficiency of the resin molding step of the semiconductor element can be considerably improved. The present invention will be described in detail below. The release film 1 for a semiconductor resin mold of the present invention is basically as Fig. 1 shows a feature of at least a release layer (i) having excellent mold release property and a plastic support layer (II) supporting the same. (Release layer (I)) Mold thin The release layer (I) of 1 is disposed so as to face the sealing surface of the semiconductor element, and the layer which is in contact with the mold resin injected into the mold is sufficient to impart mold release property to the molded resin after curing. The resin which forms the release layer is not particularly limited as long as it has a mold release property such as an epoxy resin, but is preferably formed of a fluororesin having excellent mold release property. The fluororesin may, for example, be an ethylene/tetrafluoroethylene copolymer (hereinafter referred to as "ETFE"), a chlorotrifluoroethylene resin (hereinafter referred to as "200815175 CTFE"), or polytetrafluoroethylene (hereinafter, R PTFe"), a fluorinated ethylene resin (hereinafter referred to as r VdF), a vinyl fluoride resin (hereinafter referred to as "VF"), and a tetrafluoroethylene/hexafluoropropylene copolymer (hereinafter, It is called "FEP".), a tetrafluoroethylene/perfluoro(propyl vinyl ether) copolymer (hereinafter referred to as "PFA"), a tetrafluoroethylene/vinylidene fluoride copolymer, and a composite of these resins. Preferred are ETFE, PTFE, FEP and PFA, more preferably ETFE. Ethylene/four in ETFE The copolymerization ratio of ethylene is preferably 70/30 to 30/70, more preferably 60/40 to 35/65, and most preferably 5 5/45 to 40/60. ETFE, without impairing the release mold Within the characteristic range of nature, 'there may also be a repeating unit based on one or more types of other monomers. As other monomers', a stimulating hydrocarbon such as propylene or butadiene may be exemplified; CH2 = CX(CF2) a compound represented by nY (here, X and γ are independently hydrogen or a fluorine atom, and 11 is an integer of 1 to 8); vinylidene fluoride, fluoroethion, a gas storage (DFE), trifluoroethylene ( Fluoroolefin having a hydrogen atom in an unsaturated group such as TFE), pentafluoropropylene (PPP) or hexa-isobutylene (HFIB); hexafluoropropylene (HFP), chlorotrifluoroethylene (CTFE), perfluoro(methylethylene) Ether) (PMVE), perfluoro(ethyl vinyl ether) (PEVE), perfluoro(propyl vinyl ether) (PPVE), perfluoro(butyl vinyl ether) (PBVE), other perfluorination A fluoroolefin having no hydrogen atom in an unsaturated group such as an ether (PAVE) (except TFE). ) Wait. These other single systems may be used alone or in combination of two or more. The content of the repeating unit according to the other monomer is preferably the molar number of the total polymerization unit, preferably 0.01 to 30 mol%, 0. 〇5 to 1 5 mol% more preferably -11 - 200815175, 0.1~1 〇 Moole% is the best. In the release film 1 of the present invention, as shown in Fig. 1, as the thickness of the release layer (I), it is preferred to impart a sufficient thickness to the mold release property. The thickness is usually from 3 to 75 μm, more preferably from 6 to 30 μm. Further, in the case where the release layer (I) is formed on the support layer (11), as shown in Fig. 2, the support layer is laminated and the side is bonded to the support layer (Π). The surface a of the release layer (I) is such that the adhesion of φ is improved, and the surface treatment is preferably carried out according to a usual method. As the surface treatment method, a corona discharge treatment in air, a corona discharge treatment in the presence of an organic compound, a plasma discharge treatment in the presence of an organic compound, an inert gas, a polymerizable unsaturated compound, and the like are used. The discharge treatment or the like in the mixed gas of the gas and the hydrocarbon oxide gas is particularly preferably a corona discharge treatment in the air. (Plastic support layer (II)) • The plastic support layer (II) of the release film of the present invention is laminated as a release layer (I), and then supported to release a release film. A layer of mechanical properties such as rigidity or strength is required, but at the same time, only the release layer (I) of the release film is a layer in which sufficient gas barrier properties cannot be obtained. Conventionally, in Patent Documents 1 to 2 and the like, in order to reduce the permeation of the contaminant, a vapor deposition layer of a metal or a metal oxide is formed on one surface of the release film. However, as described above, the gas barrier layer of the metal deposition layer is used for physical contact with the mold surface, and is easily peeled off from the cross section of the film surface or the film metal -12-200815175 powder, and is used in the semiconductor resin molding. The problem of the use in the mold step is limited. In the present invention, in the absence of the metal vapor-deposited layer, the plastic support by laminating a specific resin layer having specific mechanical properties is supported. The layer (II) is used in the direct release layer to impart desired mechanical strength and gas barrier properties to the release film. According to the novel findings of the present inventors, the plastic support layer (II) itself unexpectedly has a considerable gas barrier property. In the release film 1 of the present invention, the strength of the plastic support layer (Π) at 200% elongation at 170 ° C is from 1 MPa to 50 MPa, more preferably from 2 MPa to 30 MPa °. If it is too large, the elongation of the release film is sufficiently lost. Therefore, when a mold having a large concave-convex shape is used, when the release film is placed on the mold by vacuum suction, a gap is formed between the release film and the mold which are vacuum-adsorbed, which is liable to be broken or leaking of the release film. The main factor is not ideal. # Further, when the strength of the plastic support layer is too small, the resin of the plastic support layer is pressurized and fluidized due to the thickness of the support layer, the pressure of the mold resin which is pressurized and injected in the mold, and the like. Support layer features. Further, in some cases, the resin of the support layer is mainly bleed out of the release film to become a main factor of the contamination device. As described above, the plastic support layer (Π) is a mold (shape) which is a mold which is soft and has a shape which is large toward the unevenness by maintaining the strength at the time of elongation of the above-mentioned predetermined range. In the case of forming the plastic support layer, the plastic support layer is not particularly limited as long as it has the mechanical properties as described above, and may be, for example, polyethylene terephthalate which inhibits crystallization. Polyester resin such as ester, polyethylene naphthalate, polybutylene terephthalate or the like; polyamine which is 6-nylon, 6,6-nylon, 12-nylon, etc.; polyolefin such as polypropylene Acrylic resin, polycarbonate, polyether phthalimide, vinylidene chloride, ethylene/vinyl alcohol copolymer, etc. are available to users. Among them, polyethylene terephthalate and ethylene/vinyl alcohol φ copolymer which suppress crystallization are preferable. In the ethylene/vinyl alcohol copolymer, the copolymerization molar ratio of ethylene/vinyl alcohol is preferably 80/20 to 5 0/5 0. In particular, in the case of a mold having a large uneven shape, in the release film, in particular, a mold (shape) followability is required, and as the plastic support layer, a composition of an ethylene/vinyl alcohol copolymer is more preferable. The thickness of the plastic film or the plastic sheet constituting the support layer (II) is not particularly limited, but is usually 1 to 700 μm, preferably 6 to 200 μτη, and more preferably about 10 to ΙΟΟμπι. In the release film 1 of the present invention, at least the plastic support layer (11) which imparts rigidity to the release film 1 as described above has a strength at 200% elongation at 170 ° C (hereinafter, sometimes only "Strength at elongation".), basically specified as IMPa~5 0MPa. Further, the relationship between the strength at the time of elongation of the release layer (I) and the plastic support layer (II) is preferably selected as follows, that is, the release film 1 is applied to a shape having a large unevenness. In the case of a mold, when the release film is vacuum-adsorbed toward the mold before the resin is sealed, it is particularly required that the release film follows the irregularity of the mold to its corresponding circumference. -14-200815175 The mold (shape) followability is preferably selected in comparison with the release layer (I) to select a softer plastic support layer (II). On the other hand, it is preferable to suppress the elongation of the release film and to reduce the wrinkles of the film, and it is preferable to select a harder plastic support layer (II) as compared with the release layer (I). Further, in the present invention, as the plastic support layer (II), for example, among the resins forming the above-mentioned plastic support layer, in particular, by selecting a more excellent high-temperature gas barrier property as compared with the release layer (I), The release film 1 to be formed is more preferable than the release film of a single layer (only the release layer), and has excellent high-temperature gas barrier properties at the same thickness. (Xylene gas permeability) The gas barrier semiconductor resin of the release film of the present invention having a xylene gas permeability of 1×10 ° C or less of 5×10·15 (kmol · m/( s · m 2 · kPa )) or less The mold is used as a release film. The gas permeability of the original release film is preferably evaluated as the permeability of the film to a low-viscosity substance or the like which is produced by a ring-shaped resin or the like of a mold resin. In the related art, as described in the above-mentioned Patent Documents 1 to 2, it is evaluated by the film permeability of carbon dioxide gas, and the low-viscosity substance is substantially different from the carbon dioxide gas as a chemical substance, and the correlation is not sufficient. . The inventors of the present invention have found that xylene vapor (gas) is selected as a model compound, and the gas permeability of a substance such as an epoxy resin can be good by 17 (the film permeability of the xylene gas in TC). In other words, the permeability coefficient of xylene gas is an index of good resistance to organic substances produced by a semiconductor resin mold resin such as Epoxy-15-200815175 grease, and it is found that the smaller the shrinkage, the semiconductor resin The mold in the molding step is less polluted. Therefore, in the present invention, the xylene gas permeability of the release film was found to be specific to 値' specifically by the xylene gas permeability in 1 70 ° C of 5 x 10 ·15 (kmol · m / ( s · m2 · kPa)), the contamination of the mold can be reduced to a sufficient extent. The xylene gas permeability of the release film is 4xlCr15 (kmol*m/(s*m2) kPa)) The method for measuring the gas permeability of the release film according to the present invention is as described in the following examples, and the communication port (opening surface) of the upper chamber and the lower chamber is measured by a transmittance film (sample film) )close The xylene gas was introduced into the upper chamber at 1 70 ° C, and the sample film was kept under vacuum to pass the xylene gas through the layer chamber, and the time change of the concentration (pressure) of the passed xylene gas was measured. The permeability coefficient of the xylene gas in the environment at 170 ° C is calculated from the pressure change in the normal state. (Layer structure of the release film) The structure of the release film of the present invention is a fluororesin layer as shown in FIG. The release layer (I) / the composition of the plastic support layer (II) is basically the release layer (I) / plastic support layer (II) such as the fluororesin layer shown in Fig. 3 / may also be a fluororesin a film composed of a layer (I) such as a layer. At this time, since the release layer (I) is formed on both sides of the plastic support layer (II), it is not necessary to distinguish the front and back surfaces of the release film, and it is easier to carry out the mold. When the release film is disposed, the operation of -16-200815175. In any layer configuration, an adhesive layer may be provided between the release layer (I) such as the fluororesin layer and the plastic support layer (II). In the case of the layer, as described above, the surface of the release layer (I) on the side to be followed The surface treatment is preferably carried out. The adhesive may be, for example, any of an isocyanate type, a polyurethane type, a polyester type, etc. The thickness of the adhesive layer is preferably in the range of 0.1 to 5 μm, and 0.2 to 2 μm. The thickness of each layer of the gas barrier release film of the present invention is described as a thickness of each layer, and the thickness of each layer is usually from 3 to 75 μηχ, preferably from 6 to 30. Μηι, the plastic support layer (II) is generally 1 to 700 μπι, preferably 6 to 200 μηι, and further preferably 10 to ΙΟΟμηι. (Pear formation) • In the release film of the present invention, the surface layer of the fluororesin Pear processing can also be applied to the layer and the plastic support layer. The arithmetic surface roughness of the surface of the surface layer during the processing of the pear is preferably in the range of 0.01 to 3·5 μm, and the range of 〇·15 to 2.5 μη is more preferable, and the surface roughness is in this range to prevent the molded article. The appearance is poor, and the yield is improved, and the visibility of the lot number of the molded article is improved. When the surface layer is processed by pears and the release film is vacuum-adsorbed by the mold, the air between the release film and the mold is easily escaping, and the mold absorbability is improved. -17- 200815175 (Molding) The release film for the semiconductor resin mold of the present invention can be used in the resin molding step of the conductor member. That is, a predetermined position in the molding die is provided with a conductor element and the release film of the present invention, and after the mold is closed, the release film is adsorbed on the mold surface, and the semiconductor resin mold covering the semiconductive surface is used. Between the mold films, the plastic: shape is good. The hardened mold resin and the mold release of the present invention are released. [Embodiment] Hereinafter, the present invention will be specifically described by way of examples, and the scope of the invention is not limited thereto. Further, the second coefficient in the present invention is measured as follows. [Met toluene gas permeability coefficient (kmol.m/(s·!!!2· 定] According to JIS K 7 1 26-1 987, the test temperature was 170 by differential pressure method. (: The sample gas is xylene gas, 5 kPa, the permeation surface diameter of the sample film was 5 〇 min. The xylene gas rate measurement film (sample film) was introduced into the layer chamber above the l7 〇t, and the xylene gas was kept in a vacuum state, and the transmitted xylene was measured. In the air body, the half-mold film is similarly applied to the half of the mold and then vacuum-inhaled, and the element and the mold resin are transferred into a film system, but the toluene gas of the present invention is measured by kPa)). The pressure is the body, and the permeability coefficient of the xylene gas at the temperature of 17 °C is calculated from the change of the pressure in the normal state through the change of the concentration of the body in the lower layer chamber (pressure -18-200815175 force). [Example 1] (1) As the release layer (I), an ETFE film (manufactured by Asahi Glass Co., Ltd., trade name: Fluon ETFE film) having a thickness of 12 μm was used. Further, one side of the ETFE film (opposite the support layer ( Next) In order to increase the adhesion, the corona discharge treatment was carried out at a discharge amount of 40 W·min/m 2 . Further, as the plastic support layer (II ), an ethylene/vinyl alcohol copolymer of 12 μm (manufactured by Kuraray Co., Ltd., a product) was prepared. The film of the name: EVAL EF-F. The plastic support layer (11) has a length of 5 Μ P a 〇 (2) at a temperature of 200 ° C in 1 70 ° C. (2) The above plastic support layer (II) On both sides, a polyester adhesive (manufactured by Asahi Glass Co., Ltd., trade name: AG-9014A) was applied and dried in a dry film thickness of 0.4 μm, and dried as shown in Fig. 2 to carry out a facing release layer ( I) With each of the dry laminates, a release film ((I) / ( Π ) / ( I ))) having a layer structure (hereinafter referred to as "release film 1") shown in Fig. 3 is obtained. (3) The release film 1 is measured by the above method to determine a gas permeability coefficient of xylene at a temperature of 170 ° C, and is 2 χ 10 _ 15 ( kmol · m / ( s · m 2 · kPa)). The results of the strength of the molded film 1 at 200% elongation at 170 ° C are shown in Table 1. (4) The measurement was carried out as follows, and the release film 1 obtained as described above was used for the molding of -19-200815175. The release property of the epoxy resin, that is, between the release film 1 and the Kapton film (polyimide film, DuPont brand trademark) (control film), the shape of the word of the mouth is cut 0.1 A1 of the thickness of mm is provided as a frame (spacer), and an epoxy resin for molding a semiconductor is injected into the frame of this A1. Extrusion was carried out in a flat plate extrusion at 175 ° C, and the release film 1 and the Kapton film were joined by an epoxy resin in this mold. (In addition, the release layer (I) is placed in contact with the epoxy resin in the layer of the release film 1). The release film 1 of the resin for molding the semiconductor is cut into a slender shape having a width of 25 mm. When the end portion was peeled off and the 180° peel test with the semiconductor mold resin was performed, the peel strength was 〇(N/m). The results are shown in Table 1. (5) The unmolded substrate is placed in the lower mold of the transfer molding at 175 ° C, and the upper and lower molds are closed after the vacuum release of the release film 1 on the upper mold, and the epoxy resin for the semiconductor mold is transferred at 7 MPa, 90 sec. Forming. When the mold injection was repeated under the above conditions and the contamination of the mold was confirmed by visual inspection, the 2,000-times repetition was observed, and no mold contamination was observed at all. In the case of more than 2,000 repetitions, slight mold contamination occurred. (6) When the mold having the concave portion is held at 170 ° C to cause the vacuum adsorption release film 1 to be in the concave portion of the mold, there is almost no gap between the release film and the mold, and the release film 1 is known to have a mold (Shape) followability is very good. [Example 2] (1) As the plastic support layer (II), in addition to the use of 25 μm of poly-p--20-200815175 ethylene phthalate film (manufactured by Teijin DuPont Film Co., Ltd., trade name: Teflex FT3), A release film (hereinafter referred to as "release film 2") was obtained in the same manner as in Example 1. The plastic support layer (II) has a strength of 25 MPa when it is 200% elongation at 170 ° C. (2) The release film 2 is treated in the same manner as in Example 1, and the xylene gas permeation is measured at 17 (TC environment). The coefficient was measured at a temperature of 1 70 ° C in an elongation of 200%. Further, the peel strength was measured at a 180 ° peel test. The xylene gas permeability coefficient of the release film 2 was 3χ1 (Γ15 (kmol · m/ ( s · m2 · kPa )), 200% at 170 °C, strength at 15 MPa, and peel strength at 180°, 0 (N/m). The results are shown in Table 1. 3) Further, in the same manner as in Example 1, when the mold release was repeated using the release film 2, it was observed by repeating 2000 times, and no mold contamination was observed at all. Further, when it was over 200 times, it occurred. [Comparative Example 1] (1) A monomer ETFE film (manufactured by Asahi Glass Co., Ltd., trade name: Fluon ETFE) having a thickness of 50 μm was directly used as a release film sample (hereinafter referred to as "release film 3"). Used in the test. When the strength of the ETFE film at 200% elongation at 170 ° C was measured, it was 5 MPa. -21 - 200815 175 (2) Except that the release film 3 was used instead of the release film 1, the rest was carried out in the same manner as in Example 1, and the xylene gas permeability coefficient was measured at 170 ° C, and the same was carried out at 180 °. The peeling test was carried out. The results are not shown in Table 1. (3) Further, in the same manner as in Example 1, when the mold release was repeated using the release film 3, less than 2000 mold contaminations were apparent. Table 1] Release film Dimethylbenzene gas permeability coefficient (kmol · m / (s · m2 · kPa)) 200% elongation strength (MPa) at 170 ° C environment 18 〇. Peel test (N / m) Example 1 release film 1 2χ1045 5 0 Example 2 Release film 2 3χ1〇·15 15 0 Comparative Example 1 Release film 3 1χ10"14 5 0 As shown in Table 1, the results of Examples 1, 2, and Comparative Example 1 are apparently The release films 1 and 2 of the invention are as shown in Fig. 180. The release test (N/m) shows that the release property of the epoxy resin for semiconductor molding is extremely excellent, and the xylene gas permeability coefficient is 2χ10· 15, 3 χ 1〇-15 (kmol · m / ( s · m2 · kP a ) ), 1 χ 1 0-14 ( km ο 1 · m / ( s · m2 · kPa In the present invention, it is smaller than the predetermined size. Therefore, the transfer molding test using the release films 1 and 2 was observed to repeat the 2,000 times, and no mold contamination was observed at all. Further, when it exceeds 2,000 times of repetition, minute mold contamination occurs, and mold contamination is sufficiently suppressed. In this case, when the ETFE film itself is used as a release film, although the moldability is good, the xylene gas permeation system 'kmol · m / ( s · m2 · kPa )) is more than the standard of the present invention. The bead contamination has become apparent in the transfer molding test using the mold of the epoxy resin component of the film through the use of the release film 3. Industrial Applicability According to the present invention, it is possible to provide a mold having a lower mold and less mold contamination due to a mold resin than in the related art, and a mold release film having a mold resin can be provided. Further, the release film of the present invention has no problem of being peeled off from the metal powder at both ends of the film due to the inconvenience. Therefore, by applying the semiconductor resin of the present invention, in the resin molding step of the semiconductor, the mold contamination width reduces the number of times the mold is cleaned, and the semiconductor element® production efficiency can be improved, so that the industrial applicability is extremely large. The release film for the semiconductor resin mold is particularly suitable for use in a grease mold, and other applications are also suitable for various applications. In addition, the application of the specification of the application No. 2006-223 565, the scope of the patent application, and the contents of the contents are hereby incorporated by reference to the specification of the present invention. The number of the drawings is 1 X 1 0·14値 , , , 。 。 。 。 。 。 。 。 。 。 。 如 如 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 The production of the resin mold is applied to the semiconductor tree and is suitable for demolding. The patent application drawings and abstracts are not in use. -23- 200815175 [0 i] is a release film for the semiconductor resin mold of the present invention. [Fig. 2] Fig. 2 is an explanatory view showing a mold release film for a semiconductor resin mold of the present invention. [Fig. 3] Fig. 3 is a view showing another release film for a semiconductor resin mold of the present invention. Explanation of layer composition. [Explanation of main component symbols] 1 : Release film for semiconductor resin molding I: release layer II: plastic support layer a: plastic support layer with release layer Next to the surface - 24