JP2006049850A - Mold-releasing film for sealing semiconductor chip - Google Patents
Mold-releasing film for sealing semiconductor chip Download PDFInfo
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本発明は、半導体チップ封止用離型フィルムに関する。 The present invention relates to a release film for sealing a semiconductor chip.
樹脂封止型半導体パッケージの製造において、半導体チップの被封止面と金型との間に、離型フィルムが介在する。その理由は、半導体チップを樹脂で封止する際に、封止樹脂と金型との離型性を確保し、製造を円滑に進めるためである。 In the production of a resin-encapsulated semiconductor package, a release film is interposed between a surface to be encapsulated of a semiconductor chip and a mold. The reason is that when the semiconductor chip is encapsulated with resin, the mold release property between the encapsulating resin and the mold is ensured, and the production can proceed smoothly.
樹脂封止型半導体パッケージの中でも特に、外部リード端子ピンがパッケージ内部に取り込まれ、該端子表面が封止樹脂より露出した半導体パッケージ（例えば、Ｑｕａｄ Ｆｌａｔ Ｎｏｎ−Ｌｅａｄｅｄ Ｐａｃｋａｇｅ（以下、ＱＦＮという。）、Ｓｍａｌｌ Ｏｕｔｌｉｎｅ−Ｌｅａｄｅｄ Ｐａｃｋａｇｅ（以下、ＳＯＮという。）等）の製造において、離型フィルムに求められる特性としては、次のことが挙げられる。
Ａ１．半導体パッケージにおけるスタンドオフ高さを良好に形成できること。
Ａ２．樹脂封止時に半導体パッケージの端子間において、離型フィルムにたるみやしわが発生しないこと。前記しわの発生は、当該部分で封止樹脂がくぼんだ形状（以下、「くぼみ」ともいう。）となる不具合の原因となる。
Ａ３．離型フィルムと半導体パッケージの端子表面との間にすき間ができないこと。前記すき間の発生は、封止樹脂が該端子表面にまわり込み付着（以下、「樹脂かぶり」ともいう。）する不具合の原因となる。
Ａ４．樹脂封止した後、半導体パッケージからの剥離性に優れること。
Among the resin-encapsulated semiconductor packages, in particular, a semiconductor package (for example, Quad Flat Non-Leaded Package (hereinafter referred to as QFN)) in which external lead terminal pins are taken into the package and the surface of the terminals is exposed from the encapsulating resin. In the production of Small Outline-Leaded Package (hereinafter referred to as SON), the following characteristics are required for the release film.
A1. The standoff height in the semiconductor package can be formed satisfactorily.
A2. There should be no sagging or wrinkles in the release film between the terminals of the semiconductor package during resin sealing. The generation of the wrinkles causes a problem that the sealing resin becomes a concave shape (hereinafter, also referred to as “dent”) at the portion.
A3. There should be no gap between the release film and the terminal surface of the semiconductor package. The generation of the gap causes a problem that the sealing resin wraps around and adheres to the surface of the terminal (hereinafter also referred to as “resin fog”).
A4. Excellent exfoliation from semiconductor package after resin sealing.
半導体パッケージの樹脂モールド用離型フィルムとしてはテトラフルオロエチレン−ヘキサフルオロプロピレン共重合体（以下、ＦＥＰともいう。）フィルム、ポリエチレンテレフタレート（以下、ＰＥＴという。）フィルム、フッ素樹脂含浸ガラスクロス等が挙げられることは知られている（例えば、特許文献１を参照。）。樹脂モールド成形用離型フィルムとして、エチレン−テトラフルオロエチレン共重合体（以下、ＥＴＦＥともいう。）やＦＥＰやテトラフルオロエチレン−パーフルオロアルキルビニルエーテル共重合体（以下、ＰＦＡともいう。）等の熱可塑性のテトラフルオロエチレン系共重合体よりなる離型フィルムが知られている（例えば、特許文献２を参照。）。また、半導体パッケージ成形用離型フィルムの材料として、ＰＥＴ、ポリブチレンテレフタレート（以下、ＰＢＴともいう。）、ポリスチレン、ポリテトラフルオロエチレン（以下、ＰＴＦＥともいう。）、ナイロン等が知られている（例えば、特許文献３を参照。）。
Examples of the release film for resin molds of semiconductor packages include tetrafluoroethylene-hexafluoropropylene copolymer (hereinafter also referred to as FEP) film, polyethylene terephthalate (hereinafter referred to as PET) film, and fluororesin impregnated glass cloth. It is known (see, for example, Patent Document 1). As a release film for resin molding, heat such as ethylene-tetrafluoroethylene copolymer (hereinafter also referred to as ETFE), FEP, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (hereinafter also referred to as PFA), or the like. A release film made of a plastic tetrafluoroethylene copolymer is known (for example, see Patent Document 2). Further, PET, polybutylene terephthalate (hereinafter also referred to as “PBT”), polystyrene, polytetrafluoroethylene (hereinafter also referred to as “PTFE”), nylon, and the like are known as a material for a release film for forming a semiconductor package (hereinafter referred to as “PTFE”). For example, see
しかし、ＰＥＴ等のように引張弾性率の高い樹脂のみからなるフィルムが、離型フィルムとして用いられた場合、半導体パッケージの端子表面への樹脂かぶりが発生する問題があった。ＦＥＰ、ＰＦＡ等のように引張弾性率の低い樹脂のみからなるフィルムを離型フィルムとして用いた場合、成形中にフィルムのたるみやしわが発生するため半導体パッケージ端子間にくぼみが発生する問題があった。 However, when a film made of only a resin having a high tensile elastic modulus such as PET is used as a release film, there is a problem that resin fogging occurs on the terminal surface of the semiconductor package. When a film made of only a resin having a low tensile modulus such as FEP or PFA is used as a release film, there is a problem that dents are generated between semiconductor package terminals because the film sag or wrinkle occurs during molding. It was.
ＱＦＮやＳＯＮ等の半導体パッケージ成形用離型フィルムとして、基材フィルムの片面にフッ素系高分子材料からなるフィルムが積層された積層フィルムが知られている。該離型フィルムとしては、ポリイミド−ＰＴＦＥ、アルミニウム−ＰＴＦＥ、ポリイミド−フッ素ゴム−ＦＥＰ薄膜積層フィルムが使用できることが知られている（例えば、特許文献４を参照。）。該積層フィルムでは、フッ素系高分子材料からなる層は、当該フッ素系高分子材料の粉末の水性ディスパージョンを塗布し、乾燥し加熱焼成することにより形成される。 As a release film for forming a semiconductor package such as QFN or SON, a laminated film in which a film made of a fluorine-based polymer material is laminated on one side of a base film is known. As the release film, it is known that polyimide-PTFE, aluminum-PTFE, polyimide-fluoro rubber-FEP thin film laminated film can be used (for example, see Patent Document 4). In the laminated film, the layer made of the fluorine-based polymer material is formed by applying an aqueous dispersion of the powder of the fluorine-based polymer material, drying, and baking by heating.
前記操作により形成される層の厚さはある程度限られる。したがって、厚さを厚くしたい場合、所望の厚さになるまで前記操作を繰り返す必要があるため、当該層の厚さを所望の厚さとするためには、非常に煩雑な操作を要する問題があった。すなわち、任意のスタンドオフ高さを有する半導体パッケージを製造するための離型フィルムを得るためには手間と時間がかかる問題があった。スタンドオフ高さとは、半導体チップリードフレームの端子上面と半導体パッケージ封止樹脂上面との高さの差を意味する。また、高価なポリイミドフィルムを基材フィルムとして用いた積層フィルムでは、半導体パッケージの製造コストが高くなる問題があった。 The thickness of the layer formed by the operation is limited to some extent. Therefore, when it is desired to increase the thickness, it is necessary to repeat the above operation until the desired thickness is reached. Therefore, there is a problem that a very complicated operation is required to obtain the desired thickness of the layer. It was. That is, there is a problem that it takes time and effort to obtain a release film for manufacturing a semiconductor package having an arbitrary standoff height. The standoff height means a difference in height between the upper surface of the terminal of the semiconductor chip lead frame and the upper surface of the semiconductor package sealing resin. Moreover, in the laminated film using an expensive polyimide film as a base film, there is a problem that the manufacturing cost of the semiconductor package becomes high.
また、半導体チップの一部が樹脂でモールドされていない露出面を有する半導体パッケージ（以下、チップ露出型半導体パッケージという。）の製造において、離型フィルムに求められる特性としては、次のことが挙げられる。
Ｂ１．樹脂封止時に半導体チップ周縁部の離型フィルムにたるみやしわが発生しないこと。当該部分で離型フィルムにたるみやしわが発生した場合、封止樹脂がくぼんだ形状（以下、「くぼみ」ともいう。また、上記Ａ２の「くぼみ」も含めて「くぼみ」ということもある。）となる問題がある。
Ｂ２．離型フィルムと半導体チップ表面との間にすき間ができないこと。前記すき間が発生した場合、封止樹脂が該チップ表面にまわり込み付着（以下、「樹脂かぶり」ともいう。また、上記Ａ３の「樹脂かぶり」も含めて「樹脂かぶり」ということもある。）する問題がある。
Ｂ３．樹脂封止時に、金型が離型フィルムを介して半導体チップと接触する際、半導体チップを保護し、破損を防止できること。
Ｂ４．樹脂封止した後、半導体パッケージからの剥離性に優れること。
Further, in the manufacture of a semiconductor package having an exposed surface in which a part of a semiconductor chip is not molded with a resin (hereinafter referred to as a chip-exposed semiconductor package), characteristics required for a release film include the following. It is done.
B1. No sagging or wrinkles occur in the release film at the periphery of the semiconductor chip during resin sealing. When sagging or wrinkles occur in the release film in the portion, the shape of the sealing resin is recessed (hereinafter also referred to as “indent”. In addition, the “indent” in A2 may also be referred to as “indent”. ).
B2. There must be no gap between the release film and the semiconductor chip surface. When the gap is generated, the sealing resin wraps around and adheres to the chip surface (hereinafter also referred to as “resin fog”. Also referred to as “resin fog”, including “resin fog” in A3). There is a problem to do.
B3. When the mold comes into contact with the semiconductor chip through the release film during resin sealing, the semiconductor chip can be protected and can be prevented from being damaged.
B4. Excellent exfoliation from semiconductor package after resin sealing.
チップ露出型半導体パッケージの製造において、金型表面に凸状突起を設け、樹脂モールドする際に、該金型表面に配置された離型フィルムの一部を前記凸状突起が押し下げることにより離型フィルムを引き延ばす。その結果、半導体チップ周囲における離型フィルムのしわが、なくせることは知られている。また、半導体チップの破損を防ぐために、バネによって上下するフローティングブロックを有する金型を用いることがしられている（例えば、特許文献５を参照。）。しかし、特定の構成の離型フィルムを用いることにより、離型フィルムのしわの防止や、半導体チップの破損を防止ができることの開示はない。 In manufacturing a chip-exposed semiconductor package, when a convex protrusion is provided on the mold surface and resin molding is performed, the convex protrusion pushes down a part of the release film disposed on the mold surface to release the mold. Stretch the film. As a result, it is known that wrinkles of the release film around the semiconductor chip can be eliminated. In order to prevent damage to the semiconductor chip, a mold having a floating block that is moved up and down by a spring is used (see, for example, Patent Document 5). However, there is no disclosure that it is possible to prevent wrinkles of the release film or damage of the semiconductor chip by using a release film having a specific configuration.
本発明の目的は、半導体パッケージの製造において、くぼみの発生や、樹脂かぶりの発生を防止できる半導体チップ封止用離型フィルムを提供することにある。また、ＱＦＮやＳＯＮ等の端子表面が封止樹脂より露出した半導体パッケージの製造においては、さらに良好なスタンドオフ高さを形成しうる半導体チップ封止用離型フィルムを提供することにある。チップ露出型半導体パッケージの製造においては、さらに半導体チップを破損させない半導体チップ封止用離型フィルムを提供することにある。 An object of the present invention is to provide a release film for sealing a semiconductor chip that can prevent the occurrence of dents and the occurrence of resin fogging in the manufacture of a semiconductor package. Another object of the present invention is to provide a release film for sealing a semiconductor chip capable of forming a more favorable standoff height in the manufacture of a semiconductor package in which the terminal surface of QFN, SON or the like is exposed from the sealing resin. Another object of the present invention is to provide a release film for sealing a semiconductor chip that does not damage the semiconductor chip in the manufacture of the chip-exposed semiconductor package.
本発明は、延伸ポリエステル樹脂フィルムからなる基材フィルムの少なくとも片面に、フッ素樹脂からなるフィルムが積層されてなる半導体チップ封止用離型フィルムを提供する。
本発明は、延伸ポリエステル樹脂フィルムからなる基材フィルムの少なくとも片面に、フッ素樹脂からなるフィルムが積層されてなる積層フィルムであることを特徴とする半導体パッケージ製造用離型フィルムを提供する。
The present invention provides a release film for sealing a semiconductor chip, in which a film made of a fluororesin is laminated on at least one surface of a base film made of a stretched polyester resin film.
The present invention provides a release film for manufacturing a semiconductor package, which is a laminated film in which a film made of a fluororesin is laminated on at least one surface of a base film made of a stretched polyester resin film.
本発明の離型フィルムを用いて半導体パッケージを製造すると、半導体パッケージにくぼみや樹脂かぶりが生ずることがない。ＱＦＮやＳＯＮ等の端子表面が封止樹脂より露出した半導体パッケージにおいては、さらに良好なスタンドオフ高さを得ることができる。また、本発明の離型フィルムでは、フッ素樹脂からなるフィルムを任意の厚さとすることが容易であるため、当該積層フィルムを用いて半導体パッケージを製造すれば、任意のスタンドオフ高さに容易に調整できる。 When a semiconductor package is manufactured using the release film of the present invention, the semiconductor package is free from dents and resin fog. In a semiconductor package in which the terminal surface of QFN, SON or the like is exposed from the sealing resin, an even better standoff height can be obtained. In addition, in the release film of the present invention, it is easy to set the film made of a fluororesin to an arbitrary thickness. Therefore, if a semiconductor package is manufactured using the laminated film, an arbitrary standoff height can be easily obtained. Can be adjusted.
チップ露出型半導体パッケージにおいては、さらに半導体チップを破損させることなく半導体パッケージを製造できる。 In the chip exposed semiconductor package, the semiconductor package can be manufactured without further damaging the semiconductor chip.
本発明における基材フィルムに用いられるポリエステル樹脂としては、ＰＥＴ、ＰＢＴ、ポリエチレンナフタレート等が挙げられる。なかでも、価格等の面からＰＥＴが好ましい。 Examples of the polyester resin used for the base film in the present invention include PET, PBT, and polyethylene naphthalate. Of these, PET is preferable from the viewpoint of price and the like.
本発明におけるポリエステル樹脂の融点は、封止樹脂の成形温度より高いことが好ましく、成形温度＋２０℃以上であることがより好ましく、成形温度＋５０℃以上であることが最も好ましい。該融点が封止樹脂成形温度より高いと、封止樹脂成形時に基材フィルムの変形が少ないため好ましい。 The melting point of the polyester resin in the present invention is preferably higher than the molding temperature of the sealing resin, more preferably the molding temperature + 20 ° C. or more, and most preferably the molding temperature + 50 ° C. or more. It is preferable that the melting point is higher than the sealing resin molding temperature because there is little deformation of the base film during molding of the sealing resin.
本発明における基材フィルムは、半導体パッケージ製造時の樹脂封止用金型の成形時の締め付け圧力（以下、成形圧力ともいう。）、金型の成形時温度（以下、成形温度ともいう。）下で、圧縮変形が小さいものが好ましい。具体的には、１８０℃での延伸方向の引張弾性率が１５０〜４００ＭＰａのフィルムが好ましく、１７５〜３００ＭＰａがより好ましい。
本発明における基材フィルムとしては、二軸延伸ポリエステル樹脂フィルムが好ましい。
The base film in the present invention is a clamping pressure (hereinafter also referred to as molding pressure) at the time of molding a resin sealing mold during the manufacture of a semiconductor package, and a molding temperature (hereinafter also referred to as molding temperature). Below, a thing with small compression deformation is preferable. Specifically, a film having a tensile elastic modulus in the stretching direction at 180 ° C. of 150 to 400 MPa is preferable, and 175 to 300 MPa is more preferable.
As the base film in the present invention, a biaxially stretched polyester resin film is preferable.
本発明におけるフッ素樹脂としては、熱可塑性のテトラフルオロエチレン系共重合体が好ましい。熱可塑性のテトラフルオロエチレン系共重合体を本発明の離型フィルムに用いた場合、半導体チップ封止樹脂の成形圧力、成形温度下で、低圧縮弾性率であるため、封止樹脂かぶりがなく、かつ、スタンドオフ高さを良好にできるため好ましい。フッ素樹脂の具体例としては、ＥＴＦＥ、ＦＥＰ、ＰＦＡ等が挙げられる。ＥＴＦＥが、成形性に優れ、樹脂との剥離性に優れ、低価格であるので、より好ましい。 The fluororesin in the present invention is preferably a thermoplastic tetrafluoroethylene copolymer. When a thermoplastic tetrafluoroethylene copolymer is used in the release film of the present invention, it has a low compression elastic modulus under the molding pressure and molding temperature of the semiconductor chip sealing resin, so there is no sealing resin fog. And it is preferable because the standoff height can be improved. Specific examples of the fluororesin include ETFE, FEP, PFA and the like. ETFE is more preferable because it is excellent in moldability, excellent in peelability from the resin, and low in price.
ＥＴＦＥとしては、テトラフルオロエチレンとエチレンとの共重合体およびテトラフルオロエチレンとエチレンとその他のモノマーとの共重合体が好ましい。 ETFE is preferably a copolymer of tetrafluoroethylene and ethylene and a copolymer of tetrafluoroethylene, ethylene and other monomers.
その他のモノマーとしては、クロロトリフルオロエチレン、ヘキサフルオロプロピレン、パーフルオロ（アルキルビニルエーテル）、フッ化ビニリデン等のフルオロオレフィン、ＣＨ２＝ＣＨＲｆ（ただし、Ｒｆは炭素数１〜８のポリフルオロアルキル基を表す。以下においても同じ。）やＣＨ２＝ＣＦＲｆ等のポリフルオロアルキルエチレン類、ＣＦ２＝ＣＦＯＣＨ２Ｒｆ等のポリフルオロアルキルトリフルオロビニルエーテル類等が挙げられる。これらは、単独でまたは２種以上を併用してもよい。
特に、前記ＣＨ２＝ＣＨＲｆが好ましい。Ｒｆとしては、炭素数が３〜６のパーフルオロアルキル基がより好ましく、Ｃ４Ｆ９が最も好ましい。
Other monomers include fluoroolefins such as chlorotrifluoroethylene, hexafluoropropylene, perfluoro (alkyl vinyl ether) and vinylidene fluoride, CH 2 = CHR f (where R f is a polyfluoroalkyl having 1 to 8 carbon atoms) represents a group. the same applies to the following.) or polyfluoroalkyl ethylene such as CH 2 = CFR f, polyfluoroalkyl trifluorovinyl ether such as CF 2 = CFOCH 2 R f, and the like. These may be used alone or in combination of two or more.
In particular, CH 2 = CHR f is preferred. R f is more preferably a C 3-6 perfluoroalkyl group, and most preferably C 4 F 9 .
前記ＥＴＦＥの組成として、テトラフルオロエチレンに基づく重合単位／エチレンに基づく重合単位のモル比は、７０／３０〜３０／７０が好ましく、６５／３５〜４０／６０がより好ましく、６０／４０〜４５／５５が最も好ましい。 As the composition of ETFE, the molar ratio of polymer units based on tetrafluoroethylene / polymer units based on ethylene is preferably 70/30 to 30/70, more preferably 65/35 to 40/60, and 60/40 to 45. / 55 is most preferred.
その他のモノマーに基づく重合単位を含有する場合、その他のモノマーに基づく重合単位の含有量は、テトラフルオロエチレンとエチレンとに基づく重合単位の合計モル数に対して０．０１〜３０モル％が好ましく、０．０５〜１５モル％がより好ましく、０．１〜１０モル％が最も好ましい。 When the polymerization unit based on the other monomer is contained, the content of the polymerization unit based on the other monomer is preferably 0.01 to 30 mol% with respect to the total number of moles of the polymerization unit based on tetrafluoroethylene and ethylene. 0.05 to 15 mol% is more preferable, and 0.1 to 10 mol% is most preferable.
本発明におけるフッ素樹脂からなるフィルム（以下、フッ素樹脂フィルムともいう。）の厚さは、任意に選択できる。該厚さを適宜選択することにより、半導体パッケージのスタンドオフ高さを調整できる。フッ素樹脂フィルムの厚さは、１〜５０μｍが好ましく、２〜３０μｍがより好ましく、３〜１５μｍが最も好ましい。該フィルムの厚さがあまりに厚いと、半導体チップと金型の間で圧縮されたフィルムがリードフレームの端子間または半導体チップ周縁部に膨出し、封止樹脂の欠在部を生じることがある。また、該フィルムの厚さがあまりに薄いと、得られた半導体パッケージのスタンドオフ高さがほとんど形成されず、リードフレームの端子上面への樹脂かぶりが発生することがある。また、チップ露出型半導体パッケージにおいては、半導体チップ表面への樹脂かぶりが発生することがある。 The thickness of the film made of a fluororesin in the present invention (hereinafter also referred to as a fluororesin film) can be arbitrarily selected. By appropriately selecting the thickness, the standoff height of the semiconductor package can be adjusted. 1-50 micrometers is preferable, as for the thickness of a fluororesin film, 2-30 micrometers is more preferable, and 3-15 micrometers is the most preferable. If the film is too thick, the film compressed between the semiconductor chip and the mold may bulge between the terminals of the lead frame or at the periphery of the semiconductor chip, resulting in the absence of the sealing resin. Further, if the film is too thin, the stand-off height of the obtained semiconductor package is hardly formed, and resin fogging may occur on the upper surface of the lead frame terminals. In a chip exposed semiconductor package, resin fogging may occur on the surface of the semiconductor chip.
本発明の離型フィルムは、基材フィルムの少なくとも片面に、フッ素樹脂フィルムが積層されてなるフィルムである。使用条件に応じてフッ素樹脂フィルムが基材フィルムの片面に積層されてもよいし、両面に積層されてもよい。基材フィルムの両面にフッ素樹脂フィルムが積層される場合、一方の面に積層されたフッ素樹脂フィルム表面はエンボス処理されることが好ましい。 The release film of the present invention is a film in which a fluororesin film is laminated on at least one surface of a base film. Depending on the use conditions, the fluororesin film may be laminated on one side of the base film, or may be laminated on both sides. When a fluororesin film is laminated on both surfaces of the base film, the fluororesin film surface laminated on one surface is preferably embossed.
本発明の離型フィルムにおいて、基材フィルムとフッ素樹脂フィルムとは、接着層を介して積層されることが好ましい。通常、該接着層には接着剤の薄層が用いられる。接着剤としては、ポリエステル系接着剤、アクリル変成系接着剤、イソシアネート系接着剤、ポリエチレンイミン系接着剤、ポリウレタン系接着剤、シランカップリング剤系接着剤等が挙げられる。なかでも、ポリエステル系接着剤が好ましい。該接着層の厚さは、０．１〜５μｍが好ましく、０．５〜３μｍがより好ましい。フッ素樹脂フィルムと基材フィルムとの接着強度は５（Ｎ／１０ｃｍ）以上が好ましい。接着強度が５（Ｎ／１０ｃｍ）以上であると、半導体パッケージ製造時における樹脂封止工程で、当該接着部分が剥離しにくい。 In the release film of the present invention, the base film and the fluororesin film are preferably laminated via an adhesive layer. Usually, a thin layer of adhesive is used for the adhesive layer. Examples of the adhesive include polyester adhesives, acrylic modified adhesives, isocyanate adhesives, polyethyleneimine adhesives, polyurethane adhesives, silane coupling agent adhesives, and the like. Of these, polyester adhesives are preferred. The thickness of the adhesive layer is preferably 0.1 to 5 μm, and more preferably 0.5 to 3 μm. The adhesive strength between the fluororesin film and the base film is preferably 5 (N / 10 cm) or more. When the adhesive strength is 5 (N / 10 cm) or more, the bonded portion is difficult to peel off in the resin sealing step when manufacturing the semiconductor package.
本発明における積層フィルムの長手方向および幅方向の長さの加熱寸法変化率は、ともに−１０〜＋５％の範囲であることが好ましく、−５〜＋２％であることがさらに好ましい。該加熱寸法変化率は、ＪＩＳ Ｋ７１３３の６．手順における温度を１８０℃に、加熱時間を３０分間として、同ＪＩＳ Ｋ７１３３に記載の方法に準じて測定される。 The heating dimensional change rate of the length in the longitudinal direction and the width direction of the laminated film in the present invention is preferably in the range of −10 to + 5%, more preferably −5 to + 2%. The heating dimensional change rate is the same as that described in JIS K7133. The temperature in the procedure is 180 ° C., the heating time is 30 minutes, and the measurement is performed according to the method described in JIS K7133.
本発明の離型フィルムの製造方法は特に限定されないが、ドライラミネート法により製造することが好ましい。該製造時、基材フィルムとフッ素樹脂フィルムとを積層する前に、該フッ素樹脂フィルムの接着面はコロナ処理等の表面処理がなされ、接着性を向上させておくことが好ましい。 Although the manufacturing method of the release film of this invention is not specifically limited, It is preferable to manufacture by the dry lamination method. During the production, before the base film and the fluororesin film are laminated, the adhesive surface of the fluororesin film is preferably subjected to a surface treatment such as a corona treatment to improve the adhesiveness.
本発明の離型フィルムは、半導体パッケージの製造時、半導体チップの樹脂封止工程に使用される。特に、外部リード端子ピンがパッケージ内部に取り込まれ該端子上面が封止樹脂より露出した、外部リード端子ピンのない半導体パッケージ製造時や、チップ露出型半導体パッケージ製造時に使用されることが好ましい。外部リード端子ピンのない半導体パッケージとしては、ＱＦＮ、ＳＯＮ等が挙げられる。また、はんだボール等の外部接続端子と接触する端子が封止樹脂より露出されるフリップチップタイプまたはウエハレベルのＣＳＰ等その他の半導体パッケージの製造時にも使用できる。 The release film of the present invention is used for a resin sealing process of a semiconductor chip when manufacturing a semiconductor package. In particular, it is preferably used when manufacturing a semiconductor package without external lead terminal pins or manufacturing a chip-exposed semiconductor package, in which external lead terminal pins are taken into the package and the upper surfaces of the terminals are exposed from the sealing resin. Examples of semiconductor packages without external lead terminal pins include QFN and SON. Further, it can also be used when manufacturing other semiconductor packages such as flip chip type or wafer level CSP in which terminals that contact external connection terminals such as solder balls are exposed from the sealing resin.
以下に、本発明の離型フィルムを用いた半導体パッケージの製造方法の一例を図を用いて説明するが、本発明はこれに限定されない。 Below, although an example of the manufacturing method of the semiconductor package using the release film of this invention is demonstrated using figures, this invention is not limited to this.
図１は、本発明の離型フィルム１を示す。離型フィルム１は、二軸延伸ポリエステル樹脂フィルムからなる基材フィルム２の片面に接着層を介してフッ素樹脂フィルム３が積層されている（ただし接着層は図示せず。）。
FIG. 1 shows a
図２は、本発明の離型フィルム１を用いて半導体チップを樹脂封止し、ＱＦＮを製造する工程を示す断面図である。図２の（Ａ）に示すように、トランスファー射出成形装置の下金型５上に半導体チップ６が載置される。半導体チップ６と上金型４の間に離型フィルム１が挿入される。半導体チップ６は端子７を具備する。次に（Ｂ）に示すように、上金型４と下金型５とが、離型フィルム１と半導体チップ６を介して閉じられる。
FIG. 2 is a cross-sectional view showing a process of manufacturing a QFN by resin-sealing a semiconductor chip using the
金型が閉じられた後、（Ｃ）に示すように、封止樹脂８が、金型内に注入され充填される。次いで上金型４と下金型５が開かれる。封止樹脂８で封止された半導体チップ６は取り出され、カッターで切断される。その結果、（Ｄ）に示すＱＦＮ１１か得られる。（Ｄ）において、端子の上面９と封止樹脂上面１０との高さの差がスタンドオフ高さである。
After the mold is closed, as shown in (C), the sealing resin 8 is injected and filled into the mold. Next, the upper mold 4 and the
図３は、本発明の離型フィルムを用いて半導体チップを樹脂封止し、チップ露出型半導体パッケージが製造される工程を示す断面図である。図３の（Ｅ）に示すように、あらかじめ半導体チップ１４が搭載された基板１５は、下金型１３に載置される。離型フィルム１は、上金型１２と、半導体チップ１４との間に供給される。図３（Ｆ）に示すように、半導体チップ１４の露出面となる部分が離型フィルム１で被覆された状態で、上金型１２と下金型１３とによりクランプされる。（Ｇ）に示すように、加熱した金型によって軟化した封止樹脂１６が空間部に流入し半導体チップ１４の側面周囲を囲むようにして充填される。次いで金型は開き、（Ｈ）に示すような、露出面を有する複数の半導体チップが基板上で一括して封止樹脂１６により封止された半導体パッケージが取り出される。該半導体パッケージの封止樹脂１６は、基板１５とともに刃物１７を用いて切断される。（Ｉ）に示すような、チップ露出型半導体パッケージ１８が得られる。
FIG. 3 is a cross-sectional view showing a process of manufacturing a chip-exposed semiconductor package by resin-sealing a semiconductor chip using the release film of the present invention. As shown in FIG. 3E, the
以下、実施例を挙げて本発明を具体的に説明するが、該実施例により本発明は何ら限定されない。例１、２、５、６、９、１０は実施例であり、例３、４、７、８、１１、１２は比較例である。 EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated concretely, this invention is not limited at all by this Example. Examples 1, 2, 5, 6, 9, and 10 are examples, and examples 3, 4, 7, 8, 11, and 12 are comparative examples.
［例１］離型フィルムＰの作成例
厚さ２５μｍ、幅１２００ｍｍの二軸延伸ＰＥＴフィルム（商品名：ＧＥＣ２５、帝人デュポン社製、引張弾性率：ＭＤ／ＴＤ＝５３７８／５２４５ＭＰａ）の片面に、ポリエステル系接着剤（商品名：ＡＧ−９０１４Ａ、旭硝子社製）が塗布され、乾燥され、厚さ０．５μの接着層が形成された。厚さ１２μｍ、幅１２００ｍｍのＥＴＦＥフィルム（商品名：アフレックス１２Ｎ、旭硝子社製）の片面がコロナ処理された。当該処理面と二軸延伸ＰＥＴフィルムの接着剤塗布面とが、４０℃でドライラミネート法により接着されて積層された。ＥＴＦＥ／ＰＥＴの二層積層された後、二軸延伸ＰＥＴフィルムのもう一方の面も同様の方法でＥＴＦＥフィルムが積層された。ＥＴＦＥ／ＰＥＴ／ＥＴＦＥの三層が積層された離型フィルムＰが得られた。当該離型フィルムＰの長手方向（ＭＤ）と幅方向（ＴＤ）の加熱寸法変化率（％）が測定された。測定値を表１に示す。加熱寸法変化率は、ＪＩＳ Ｋ７１３３の６．手順における温度を１８０℃に、加熱時間を３０分間として、同ＪＩＳ Ｋ７１３３に記載の方法に準じて測定された。
[Example 1] Production example of release film P On one side of a biaxially stretched PET film (trade name: GEC25, manufactured by Teijin DuPont, tensile modulus: MD / TD = 5378/5245 MPa) having a thickness of 25 μm and a width of 1200 mm A polyester-based adhesive (trade name: AG-9014A, manufactured by Asahi Glass Co., Ltd.) was applied and dried to form an adhesive layer having a thickness of 0.5 μm. One side of an ETFE film (trade name: Aflex 12N, manufactured by Asahi Glass Co., Ltd.) having a thickness of 12 μm and a width of 1200 mm was subjected to corona treatment. The treated surface and the adhesive-coated surface of the biaxially stretched PET film were adhered and laminated at 40 ° C. by a dry laminating method. After two layers of ETFE / PET were laminated, an ETFE film was laminated in the same manner on the other side of the biaxially stretched PET film. A release film P in which three layers of ETFE / PET / ETFE were laminated was obtained. The heating dimensional change rate (%) in the longitudinal direction (MD) and the width direction (TD) of the release film P was measured. The measured values are shown in Table 1. The heating dimensional change rate is the same as in JIS K7133. The measurement was performed according to the method described in JIS K7133, with the temperature in the procedure being 180 ° C. and the heating time being 30 minutes.
［例２］離型フィルムＱの作成例
厚さ３８μｍの二軸延伸ＰＥＴフィルム（商品名：ＧＥＣ３８、帝人デュポン社製、引張弾性率：ＭＤ／ＴＤ＝３４３７／３４９３ＭＰａ）、片面がコロナ処理された厚さ５μｍのＥＴＦＥフィルム（旭硝子社製）を用いる以外は実施例１と同じ方法で、ＥＴＦＥ／ＰＥＴ／ＥＴＦＥの三層が積層された離型フィルムＱが得られた。当該離型フィルムＱの長手方向（ＭＤ）と幅方向（ＴＤ）の加熱寸法変化率（％）が測定され、測定値を表１に示す。加熱寸法変化率は、ＪＩＳ Ｋ７１３３の６．手順における温度を１８０℃に、加熱時間を３０分間として、同ＪＩＳ Ｋ７１３３に記載の方法に準じて測定された。
[Example 2] Production example of release film Q Biaxially stretched PET film (trade name: GEC38, manufactured by Teijin DuPont, tensile elastic modulus: MD / TD = 3437/3493 MPa), one side of which was corona-treated. A release film Q in which three layers of ETFE / PET / ETFE were laminated was obtained in the same manner as in Example 1 except that a 5 μm thick ETFE film (manufactured by Asahi Glass Co., Ltd.) was used. The heating dimensional change rate (%) in the longitudinal direction (MD) and the width direction (TD) of the release film Q was measured, and the measured values are shown in Table 1. The heating dimensional change rate is the same as in JIS K7133. The measurement was performed according to the method described in JIS K7133, with the temperature in the procedure being 180 ° C. and the heating time being 30 minutes.
［例３］離型フィルムＲ
離型フィルムＲとして厚さ５０μｍのＥＴＦＥフィルム（商品名：アフレックス５０Ｎ、旭硝子社製）を用いた。当該離型フィルムＲの長手方向（ＭＤ）と幅方向（ＴＤ）の加熱寸法変化率（％）が測定され、測定値を表１に示す。加熱寸法変化率は、ＪＩＳ Ｋ７１３３の６．手順における温度を１８０℃に、加熱時間を３０分間として、同ＪＩＳ Ｋ７１３３に記載の方法に準じて測定された。
[Example 3] Release film R
As the release film R, an ETFE film (trade name: Aflex 50N, manufactured by Asahi Glass Co., Ltd.) having a thickness of 50 μm was used. The heating dimensional change rate (%) in the longitudinal direction (MD) and the width direction (TD) of the release film R was measured, and the measured values are shown in Table 1. The heating dimensional change rate is the same as in JIS K7133. The measurement was performed according to the method described in JIS K7133, with the temperature in the procedure being 180 ° C. and the heating time being 30 minutes.
［例４］離型フィルムＳ
離型フィルムＳとして厚さ２５μｍのＰＥＴフィルム（商品名：ＧＥＣ２５、帝人デュポンフィルム社製）を用いた。当該離型フィルムＳの長手方向（ＭＤ）と幅方向（ＴＤ）の加熱寸法変化率（％）が測定され、測定値を表１に示す。加熱寸法変化率は、ＪＩＳ Ｋ７１３３の６．手順における温度を１８０℃に、加熱時間を３０分間として、同ＪＩＳ Ｋ７１３３に記載の方法に準じて測定された。
[Example 4] Release film S
As the release film S, a PET film having a thickness of 25 μm (trade name: GEC25, manufactured by Teijin DuPont Films Ltd.) was used. The heating dimensional change rate (%) in the longitudinal direction (MD) and the width direction (TD) of the release film S was measured, and the measured values are shown in Table 1. The heating dimensional change rate is
［例５〜８］ＱＦＮの製造例
例１〜４で作成した離型フィルムを用いて、図２に示す方法で半導体チップ１２０個の樹脂封止を行い、ＱＦＮが製造される。金型の温度は、１７５℃、成形圧力８ＭＰａ、成形時間１００秒、封止樹脂として熱硬化性エポキシ樹脂が用いられる。図２（Ｃ）で得られる切断前のＱＦＮを目視で観察した。離型フィルムのしわによって発生する、前記ＱＦＮのリード端子間の樹脂のくぼみのありなしを評価する。また、切断後のＱＦＮを目視で観察し、〇：樹脂欠けがない、×：樹脂欠けがある、として表２に示す。得られるＱＦＮのスタンドオフ高さをＱＦＮの各端子について測定し、〇：良好なスタンドオフ高さが得られる、×：良好なスタンドオフ高さが得られない、として表２に示す。
[Examples 5 to 8] QFN Production Examples Using the release films prepared in Examples 1 to 4, 120 semiconductor chips are encapsulated by the method shown in FIG. 2 to produce QFN. The mold temperature is 175 ° C., the molding pressure is 8 MPa, the molding time is 100 seconds, and a thermosetting epoxy resin is used as the sealing resin. The QFN before cutting obtained in FIG. 2 (C) was visually observed. The presence or absence of resin dents between the lead terminals of the QFN, which is caused by wrinkles of the release film, is evaluated. Further, the QFN after cutting was visually observed and shown in Table 2 as ◯: no resin chipping, x: resin chipping. The stand-off height of the obtained QFN is measured for each terminal of the QFN, and is shown in Table 2 as ◯: a good stand-off height is obtained, x: a good stand-off height is not obtained.
［例９〜１２］チップ露出型半導体パッケージの製造例
例１〜４で作成した離型フィルムを用いて、図３に示す方法で半導体チップ１２個の樹脂封止を行い、チップ露出型半導体パッケージを製造できる。金型の温度は、１７５℃、成形圧力１２ＭＰａ、成形時間１５０秒、封止樹脂として熱硬化性エポキシ樹脂を用いる。図３（Ｈ）で得られた切断前のチップ露出型半導体パッケージの半導体チップ周囲の樹脂のくぼみを目視で観察し、〇：周囲にくぼみが発生していない、×：周囲にくぼみが発生している、として表３に示す。半導体チップ表面への樹脂かぶりを目視で観察し、〇：樹脂かぶりが発生していない、×：樹脂かぶりが発生している、として表３に示す。半導体チップの破損を目視で観察し、〇：破損した半導体チップがない、×：破損した半導体チップがある、として表３に示す。図３（Ｇ）で樹脂を充填し、金型を開いた後に離型フィルムを剥離する際の剥がれやすさ（剥離性）を、○：簡単に剥がれる、×：半導体パッケージに付着し剥がれない、で表し表３に示す。
[Examples 9 to 12] Manufacturing Example of Chip Exposed Semiconductor Package Using the release film prepared in Examples 1 to 4, 12 semiconductor chips were sealed by the method shown in FIG. Can be manufactured. The mold temperature is 175 ° C., the molding pressure is 12 MPa, the molding time is 150 seconds, and a thermosetting epoxy resin is used as the sealing resin. The resin indentation around the semiconductor chip of the chip-exposed semiconductor package before cutting obtained in FIG. 3 (H) was visually observed. ○: No indentation occurred in the periphery, x: Indentation occurred in the periphery As shown in Table 3. The resin fogging on the surface of the semiconductor chip was visually observed, and it is shown in Table 3 as ◯: no resin fogging occurred and X: a resin fogging occurred. The damage of the semiconductor chip was visually observed, and it is shown in Table 3 that ◯: no damaged semiconductor chip exists, x: there is a damaged semiconductor chip. The ease of peeling (peelability) when the release film is peeled off after filling the resin in FIG. 3 (G) and opening the mold, ○: easy to peel, ×: not sticking to the semiconductor package, And shown in Table 3.
本発明の離型フィルムを用いて半導体パッケージを製造すると、半導体チップを樹脂封止する際に離型フィルムにしわが発生することにより、半導体パッケージにくぼみが生ずることを防止できる。また、樹脂かぶりの発生を防止できる。ＱＦＮ等の端子表面が封止樹脂より露出した半導体パッケージにおいてはさらに、良好なスタンドオフ高さを得ることができる。また、本発明の離型フィルムでは、フッ素樹脂からなるフィルムの厚さは任意に選択できるので、当該積層フィルムを用いて半導体パッケージを製造すれば、スタンドオフ高さを任意に調整することができる。チップ露出型半導体パッケージにおいては、製造時のチップの破損を抑えることができる。 When a semiconductor package is manufactured using the release film of the present invention, when the semiconductor chip is resin-sealed, wrinkles are generated in the release film, thereby preventing the semiconductor package from being indented. Moreover, the occurrence of resin fog can be prevented. In a semiconductor package in which the terminal surface of QFN or the like is exposed from the sealing resin, a better standoff height can be obtained. Further, in the release film of the present invention, the thickness of the film made of a fluororesin can be arbitrarily selected. Therefore, if a semiconductor package is manufactured using the laminated film, the standoff height can be arbitrarily adjusted. . In the chip-exposed semiconductor package, damage to the chip during manufacturing can be suppressed.
１：離型フィルム
２：基材フィルム
３：フッ素樹脂フィルム
４、１２：上金型
５、１３：下金型
６、１４：半導体チップ
７：端子
８、１６：封止樹脂
９：端子上面
１０：封止樹脂上面
１１：ＱＦＮ
１５：基板
１７：刃物
１８：チップ露出型半導体パッケージ
1: Release film 2: Base film 3: Fluorine resin film 4, 12:
15: Substrate 17: Blade 18: Chip-exposed semiconductor package
Claims (10)
The release film for manufacturing a semiconductor package according to any one of claims 5 to 8, wherein the semiconductor package is a semiconductor package having an exposed surface in which a part of a semiconductor chip is not molded with a resin.
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