200806976 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板檢査裝置及使用其之基板檢査方 .法，更明確地說，係關於一種能夠正確測定基板上之圖案 不良之基板檢査裝置及使用其之基板檢査方法。 【先前技術】 近來大多使用液晶顯示裝置及有機電場發光裝置200806976 IX. Description of the Invention: The present invention relates to a substrate inspection apparatus and a substrate inspection method using the same, and more particularly to a substrate inspection capable of accurately measuring a pattern defect on a substrate The device and the substrate inspection method using the same. [Prior Art] Recently, liquid crystal display devices and organic electric field light-emitting devices are mostly used.
(〇LED)等之平面顯示裝置（fht panel display)，來取代既 有之陰極射線管。 該等顯示裳置中使用到形成有各種圖案之基板。.例如 在液晶顯示裝置之彩色濾、光片基板上形成有黑色矩陣及考 色濾光片等之圖案。該等圖案必須形成為均勻之厚度。女 為彩色濾光片之情形’若未均勻形成厚度，則畫面可能名 產生斑點。 a 在顯示裝置之製造過程中，會透過基板檢査以檢杳今 圖案之厚度是否均勻形成。 一- 但是’先前之基板檢査由於是一面對形 照射光線，-面由作業者以肉眼判段有無不 正確測定之問題點。 文有難 【發明内容】 (發明所欲解決之問題） 因此’本發明之目的在於提供一種正確 基板檢査方法。 、疋圖木不良j 本發明之另一目的在於提供 確測疋圖案不良之邊 II9481.doc 200806976 板檢査裝置。 (解決問題之技術手段） W述本發明之目的係藉由以下基板檢査方法而達成，其 包含：對形成有圖案之基板施加檢査光之步騾；感測由前 述基板所反射之前述檢査光亮度之步驟；及由前述感測到 的受度判斷前述圖案有無不良之步驟。 則述檢査光較佳於同調（c〇herent)之狀態下施加於 基板。 前述檢査光較佳為線性光。 前述亮度較佳在對前述基板掃描前述檢査光之同時 得, “ 於W述掃描時，前述檢査光對前述基板之入射角較佳為 固定，且前述亮度較佳在距離前述基板之入射點固定之位 置上感測。 則述党度較佳為使用包含配置成一行的攝像單位之線列 攝像機（line camera)獲得。 前述攝像單位較佳包含CCD(charge c〇upled daia:電 荷麵合元件）。 所反射之前述檢査光較佳經由透鏡而入射至前述線列攝 像機。 ;$述基板上較佳形成有複數個像素區域，且前述各攝 像單位之光學解析度（〇ptical resuluti〇n)較佳為前述像素區 域大小（size)之100%〜300%。 前述各攝像單位之光學解析度R較佳表示為（b_f)氺 n948l.doc 200806976 D/f(在處，b係前述透鏡與前述入射點之距離，f係前.述透 祝之”、、·’沾距離’ D係如述各攝像單位之大小（size))，前述 各％像單位之光學解析度較佳係使前述透鏡與前述入射點 之距離變化而調節。 m述透鏡與前述線列攝像機之距離（a)較佳為D * R/b値 之 90%〜110% 〇 則述圖案較佳包含黑色矩陣、彩色濾光片及柱狀間隔件 中至少任一者。 前述亮度較佳隨著前述圖案之厚度而改變。 則述本發明之目的係藉由包含以下步驟之基板檢査方法 而達成·對形成有圖案之基板施加線形態之檢査光 之步驟，使用線列攝像機感測由前述基板所反射之前述檢 査光党度之步驟；及由前述感測到的亮度判斷前述圖案有 無不良之步驟。 別述党度較佳為在對前述基板掃描前述檢査光之同時測 得。 於前述掃描時，前述檢査光對前述基板之入射角較佳為 固定，丽述亮度較佳為在距離前述基板之入射點固定之位 置上感測。 所反射之前述檢査光較佳經由透鏡而入射至前述線列攝 像機’·於前述基板上較佳形成有複數個像素區域，·前述線 列攝像機較佳包含配置成一行之攝像單位；前述各攝像單 位之光學解析度（optical res〇Iuti〇n)較佳為前述像素區域大 小（size)之 1〇〇。/0〜300%。 n9481.doc 200806976 前述各攝像單位之光學解析度R較佳表示為（b-f) * D/f(此處，b係前述透鏡與前述人射點之距離’錄前述透 鏡，焦，距離’ D係前述各攝像單位之大小(㈣)，前述 。攝像單位之光學解析度較佳係使前述透鏡與前述入射點 之距離變化而調節。 、前述本發明之另一目的係藉由以下基板檢査裝置而達 成ϋ在於包含.载置部，其係載置形成有圖案之基A (fht panel display) such as (〇LED) is used instead of the conventional cathode ray tube. These display substrates are used to form substrates having various patterns. For example, a pattern of a black matrix or a color filter is formed on a color filter or a light-film substrate of a liquid crystal display device. The patterns must be formed to a uniform thickness. In the case of a female color filter, if the thickness is not uniformly formed, the screen may have a spot. a During the manufacturing process of the display device, the substrate is inspected to check whether the thickness of the pattern is uniform. One - but the 'previous substrate inspection is a face-to-face illumination, and the surface is judged by the operator to determine whether or not the problem is incorrectly determined. SUMMARY OF THE INVENTION [Problem to be Solved by the Invention] Therefore, it is an object of the present invention to provide a method for correct substrate inspection. Another object of the present invention is to provide a side inspection device for the determination of defects in the pattern II9481.doc 200806976. (Technical means for solving the problem) The object of the present invention is achieved by the following substrate inspection method, comprising: applying a step of inspecting light to a substrate on which a pattern is formed; and sensing the aforementioned inspection light reflected by the substrate a step of brightnessing; and a step of judging whether the pattern is defective by the sensed degree of sensing. The inspection light is preferably applied to the substrate in a state of coherent. The aforementioned inspection light is preferably linear light. Preferably, the brightness is obtained by scanning the inspection light on the substrate, and the incident angle of the inspection light to the substrate is preferably fixed, and the brightness is preferably fixed at an incident point from the substrate. The position is preferably sensed. The party degree is preferably obtained by using a line camera including a camera unit arranged in a line. The camera unit preferably includes a CCD (charge c〇upled daia: charge surface unit) Preferably, the reflected light reflected by the lens is incident on the line camera through a lens. Preferably, a plurality of pixel regions are formed on the substrate, and the optical resolution (〇ptical resuluti〇n) of each of the imaging units is compared. Preferably, the size of the pixel area is 100% to 300%. The optical resolution R of each of the above imaging units is preferably expressed as (b_f) 氺n948l.doc 200806976 D/f (wherein b is the aforementioned lens and the foregoing The distance between the incident points, f is the front, and the "dip distance" D is the size of each imaging unit. The optical resolution of each of the % image units is preferably the lens. versus Said change in the distance of the point of incidence is adjusted. The distance (a) of the lens described above from the line camera is preferably from 90% to 110% of D*R/b値. The pattern preferably includes at least any of a black matrix, a color filter, and a column spacer. One. The aforementioned brightness preferably changes with the thickness of the aforementioned pattern. The object of the present invention is to achieve the step of applying a line-shaped inspection light to a patterned substrate by using a substrate inspection method comprising the following steps, and sensing the aforementioned inspection light reflected by the substrate using a line camera. And a step of judging whether the pattern is defective or not by the sensed brightness. It is preferable to measure the party degree while scanning the aforementioned inspection light on the substrate. In the scanning, the incident angle of the inspection light to the substrate is preferably fixed, and the brightness of the reference is preferably sensed at a position fixed from the incident point of the substrate. Preferably, the reflected light reflected is incident on the line camera via a lens. A plurality of pixel regions are preferably formed on the substrate. The line camera preferably includes an imaging unit arranged in a line; The optical resolution (optical res 〇 Iuti〇n) of the unit is preferably 1 前述 of the size of the aforementioned pixel region. /0~300%. N9481.doc 200806976 The optical resolution R of each of the above-mentioned imaging units is preferably expressed as (bf) * D/f (here, b is the distance between the aforementioned lens and the aforementioned human target point 'recording lens, focal length, distance 'D system The size of each of the imaging units ((4)), the optical resolution of the imaging unit is preferably adjusted by changing the distance between the lens and the incident point. The other object of the present invention is to provide the following substrate inspection device. The achievement is to include a mounting portion that mounts a pattern-forming base
板者’铋及"’其係位於前述載置部之上部，&含光源部 及攝像機者；該光源部係對前述基板供給檢査光；該攝像 機係感測由前述基板所反射之前述檢査光亮度;驅動部， 其係使則述载置部與前述檢測部相對移動者·，及控制部， 其係由m述攝像機感測到的亮度判斷前述圖案有無不良 者0 :述光U5 4共給之If述檢査光較佳#同調（⑶上㈣叫。 前述檢査光較佳為線性光。 前述光源部較佳肖+ g # 角 丨平乂狂S狹縫，其係限制放射之光之放射 ^述攝像機較佳包含線列攝像機（line earn⑽）。 、，述祆測部車父佳更包含透鏡，其係位於前述攝像機與前 述載置部之間。 於刖^載置部與檢測部之相對移動時，前述基板之反射 :點與前述光源部之相對位置，及前述基板之反射地點與 則述攝像機之相對位置較佳維持固定。 丽述圖案較佳包含黑色矩陣 彩色濾光片及柱狀間隔件 11948】 .doc 200806976 中至少任一者。 【實施方式】 (發明之效果） 根據本發明，能夠提供一種正確測定圖案不良之基板檢 •査方法。 • 再者，根據本發明，能夠提供一種正確測定圖案不良之 基板檢査裝置。 赢 (實施例） § 知 以下參照附加圖式說明本發明。 於各種實施形恶中針對相同之構成要素附註相同之參照 編號，對於相同之構成要素在第1實施形態中進行代表性 說明，而在其他實施形態中可予以省略。 在以下之實施形態中，在基板方面舉液晶顯示裝置之彩 色濾光片基板為例進行說明，但本發明亦可適用於薄膜電 晶體基板。此外，本發明亦可適用於有機電場發光裝置 馨 （ED)冑冰顯示裝置（EPD)、電漿顯示裝置（PDP)等之 其他顯示裝置之基板。 以下說明中之「傻夸卩#妥,/ ·、 像素&域大小（size)」係指面積與像素 - 【域之面積相同之正方形之—邊之長度。各攝像單位係正 * ㈣’「攝像單位A小（size)」係指攝像單位之-邊之長 度。各攝像單位係拍攝攝像對象物之正方形區域者，「攝 resolution)j 正方形區域之一邊之長度。 圖1係液晶顯示裝置之剖面圖。 119481.doc -10- 200806976 液晶顯示裝置100包含薄膜電晶體基板i iO、彩色濾光片 基板120，及位於兩基板110、120之間之液晶層。 端看薄膜電晶體基板11 〇，於絕緣基板u丨上形成有複數 個薄膜電晶體112。薄膜電晶體112上覆蓋著包含無機膜或 有機膜而成之保護層113，保護層π 3之一部分被除去，形 成使薄膜電晶體112露出之接觸孔丨14。包含IT〇(indium tin oxide:銦錫氧化物 ^IZ0(indium zine〇xide:銦鋅氧 化物）等之透明導電物質而成之像素電極U5透過接觸孔 114而與薄膜電晶體112連接。 端看彩色濾光片基板120，於絕緣基板！21上形成有格子 狀之黑色矩陣122。黑色矩陣122可由含有黑色顏料之有機 物形成，其係對應於薄膜電晶體基板110之薄膜電晶體112 及配線（未圖示）而形成。 於黑色矩陣122之間形成有彩色濾光片123。彩色遽光片 123包含有機物而形成，且包含具有不同顏色之3個子層 123a、123b、lUc。於黑色矩陣122與彩色濾光片層123之 上部形成有平坦層124及包含透明導電物質而成之共用電 極125。於共用電極125上形成有柱間隔件126。柱間隔件. 126係對應於黑色矩陣122而形成，以維持兩基板11〇、12〇 之間隔。 位於兩基板110、120之間之液晶層130藉由像素電極115 〃、/、用電極125所形成之電場而決定其之排列狀態。供給 、自薄膜電晶體基板110之下部之光線由液晶層13〇調整其透 過率後’通過附接於彩色渡光片層123及彩色遽光片基板 1194gl.doc 200806976 120的外部之偏光板（未圖示），而藉此賦予對應之顏色。 以上說明之黑色矩陣122、彩色濾光片層123及柱間隔件 126等之圖案通常係於塗布感光有機層後進行曝光及顯影 而形成。 . 感光有機層之塗布可採用狹縫式塗布（slit coating)、旋 ^ 轉塗布（Spm coating)或管面塗布（screen coating)等方法·進 行。然而，於塗布前在絕緣基板上若有微粒，則感光有機 φ 層之厚度將會不均勻，而藉此形成之圖案之厚度亦將不均 勻。圖案之厚度亦有可能因為在形成圖案之過程中流入微 粒而變得不均勻。 若圖案之厚度不均勻，則顯示品質會降低，尤其當彩色 濾光片層123之厚度不均勻時，可能會在晝面上產生斑 點。 2此，需在形成各圖案後測定圖案有無不良。若測定圖 案旁不良之情形時，即重做（rework)發生不良之圖案或報 • 廢基板。 本發明即為關於測定圖案不良之檢査裝置及檢査方法 者。 _ 圖2係表示本發明之第1實施形態之基板檢査裝置之圖 - 式。 、基板榀査裝置1包含檢測部10、位於檢測部1 〇之下部而 =且基板140之載置部4〇，及使載置部仙直線運動之驅動 部50。檢査對象基板14〇包含絕緣基板i4i及形成於絕緣基 板141上之圖案142。圖案142可以採用黑色矩陣、彩色遽 119481.doc -12 - 200806976 光片層及柱間隔件中任一者。The boarder is located at an upper portion of the mounting portion, and includes a light source unit and a camera; the light source unit supplies inspection light to the substrate; the camera senses the aforementioned reflection by the substrate Checking the brightness; the driving unit is configured to move the mounting portion and the detecting unit relative to each other, and the control unit determines whether the pattern is defective by the brightness sensed by the camera. 0: Light U5 4 A total of the If said inspection light is better #同调((3)上上(四)叫. The aforementioned inspection light is preferably linear light. The light source part is preferably ++ g # 丨 丨 乂 S S S S S S S S S S S S S Preferably, the camera of the light includes a line camera (line earn (10)). The camera unit includes a lens, which is located between the camera and the mounting portion. When the detecting portion moves relative to each other, the reflection of the substrate: the relative position of the point and the light source portion, and the relative position between the reflection point of the substrate and the camera are preferably maintained. The reference pattern preferably includes black matrix color filter. Sheet and column [Embodiment] (Effect of the Invention) According to the present invention, it is possible to provide a substrate inspection and inspection method for accurately measuring a pattern defect. Further, according to the present invention, it is possible to provide A substrate inspection apparatus for accurately measuring a pattern defect. (Winning) (Embodiment) § The present invention will be described with reference to the accompanying drawings. In the various embodiments, the same constituent elements are denoted by the same reference numerals, and the same constituent elements are 1 embodiment will be described in detail, and may be omitted in other embodiments. In the following embodiments, a color filter substrate of a liquid crystal display device is described as an example of a substrate, but the present invention is also applicable. The present invention can also be applied to a substrate of another display device such as an organic electric field light-emitting device (ED) ice display device (EPD) or a plasma display device (PDP). Stupid 卩 # ,, / ·, Pixel & field size (size) refers to the area and the pixel - [the same area of the domain is positive The length of the square-side. Each camera unit is positive* (4) 'The camera unit A small size refers to the length of the side of the camera unit. Each camera unit is the square area where the camera object is captured. The length of one side of the square area is shown in Fig. 1. Fig. 1 is a cross-sectional view of a liquid crystal display device. 119481.doc -10- 200806976 The liquid crystal display device 100 includes a thin film transistor substrate i iO , a color filter substrate 120 , and two substrates 110 . A liquid crystal layer between 120 and a thin film transistor 112 is formed on the insulating substrate u. The thin film transistor 112 is covered with a protective layer containing an inorganic film or an organic film. 113, a portion of the protective layer π 3 is removed to form a contact hole 14 for exposing the thin film transistor 112. The pixel electrode U5 including a transparent conductive material such as indium tin oxide (indium tin oxide) is connected to the thin film transistor 112 through the contact hole 114. The color filter substrate 120 has a lattice-shaped black matrix 122 formed on the insulating substrate ! 21. The black matrix 122 may be formed of an organic substance containing a black pigment, which corresponds to the thin film transistor 112 and wiring of the thin film transistor substrate 110 ( A color filter 123 is formed between the black matrixes 122. The color light-emitting sheet 123 is formed of an organic substance and includes three sub-layers 123a, 123b, and 1Uc having different colors. A flat layer 124 and a common electrode 125 including a transparent conductive material are formed on the upper portion of the color filter layer 123. A column spacer 126 is formed on the common electrode 125. The column spacers 126 are corresponding to the black matrix 122. The liquid crystal layer 130 located between the two substrates 110 and 120 is determined by the electric field formed by the pixel electrode 115 and/or the electrode 125. The arrangement state is such that the light supplied from the lower portion of the thin film transistor substrate 110 is adjusted by the liquid crystal layer 13 ' after being 'attached to the outside of the color light-receiving sheet layer 123 and the color-lighting sheet substrate 1194 gl.doc 200806976 120 A polarizing plate (not shown) is used to impart a corresponding color. The patterns of the black matrix 122, the color filter layer 123, and the column spacer 126 described above are usually exposed and developed after coating the photosensitive organic layer. The coating of the photosensitive organic layer can be carried out by a method such as slit coating, spm coating or screen coating, however, on the insulating substrate before coating. If there are particles, the thickness of the photosensitive organic φ layer will be uneven, and the thickness of the pattern formed thereby will be uneven. The thickness of the pattern may also become uneven due to the inflow of particles during the pattern formation. If the thickness of the pattern is not uniform, the display quality may be lowered. Especially when the thickness of the color filter layer 123 is not uniform, spots may be generated on the surface of the crucible. It is determined whether there is a defect in the pattern after each pattern. When the pattern is defective, that is, a pattern that is defective in rework or a waste substrate is reported. The present invention is an inspection apparatus and an inspection method for measuring a pattern defect. 2 is a view showing a substrate inspection device according to a first embodiment of the present invention. The substrate inspection device 1 includes a detection unit 10 and a lower portion of the detection unit 1 and a mounting portion 4 of the substrate 140. And a driving unit 50 that linearly moves the placing portion. The inspection target substrate 14A includes an insulating substrate i4i and a pattern 142 formed on the insulating substrate 141. The pattern 142 may be any of a black matrix, a color 119 119481.doc -12 - 200806976 light sheet layer and a column spacer.
檢測部10包含固定式而對基板140供給檢査光之光源部 20，及感測由基板140所反射的反射光之亮度之攝像機 3 0。如圖3所示，攝像機3 0是由一對構成。各攝像機3 〇具 有感測亮度之區域，即FOV(field of view :視場）。各攝像 機30之F0V之寬度dl大於基板140之寬度d2的一半。攝像 機30之F0V其一部分為重疊，一部分超出基板！4〇。於攝 像機30與基板140之間設有透鏡35。 光源部20係以檢査光與基板140之入射點成固定角度θι 之方式配置。光源部20包含發光之燈21及包圍住燈21並朝 向基板140射出光線之燈罩22而構成。燈罩22其朝向基板 140之一面為開口。 光源部20之構造只要是能夠供給強度均勻之線（Hne)型 檢査光者即可，可以做多樣化之變更。光源部2〇可採用包 含函素燈或金屬鹵素（metal-halide)燈等之點光源（p〇int light source)，及將點光源轉換成線性光源之光纖（叩 fiber)之構造。 攝像機30如圖4所示，係包含CCD(charge-c〇upled device :電荷耦合元件）之n個攝像單位31排成一列之線列 攝像棧各知1像單位3 1為正方形，其一邊之長度，亦即攝 像單位31之大小（Slze) & D表示。攝像機3〇之各攝像單位3 1 配置在能夠接受到從燈21出射而由基板14〇反射的光線之 位置攝像機3〇係以與基板140之入射點成固定角度02之 方式配置。 -13- 1 J9481.doc 200806976 驅動邛5〇係使載置部4〇移動，以便檢測部⑺掃描基板 140全體。為掃描基板14〇全體，燈21之長度較佳設為比基 板MO之寬度d2稍大。 對基板140全體進行掃描時，入射點與光源部之角度 及入射點與攝像機30之角度θ2維持固定。 於掃描日守，攝像機30中感測到之反射光之強度會因圖案 142之厚度而有所變化。 在此雖未圖不，然基板檢査裝置1可更包含控制部而構 成"亥技制部係根據感測到之亮度値而判斷圖案'142有無 不良者。 圖5係用以說明本發明之第1實施形態之基板檢査裝置所 出射之檢査光之圖式。 檢査光在靠近光源部20的部分雖非平行光，但入射到基 板140時是以實質上為平行之狀態入射。如此之故，實質 上為平行之狀恶即稱作同調（c〇herem)狀態。為產生此種 同調狀態之檢査光，入射點與光源部20之間的距離c必須 維持固定値，例如約3m以上。 為透k所反射之彳双査光來檢查基板丨，攝像機3〇必須 具有適田之光學解析度。亦即，攝像機3〇之各攝像單位η 之光子解析度必須具有適當範圍。針對此點，以彩色濾光 片基板120作為檢査對象之例示進行說明。 如圖仏所不，於彩色濾光片基板120上形成有複數個像 素區域。像素錢係㈣複數個子像素而成者，為構成晝 面之基本單位。如圖所示，像素區域包含各自表現紅色、 319481.doc -14· 200806976 藍色及綠色之3個區域，其一邊之長度耵為正方形 找各Γ像單位31係拍攝基板14G中正方形之單位攝像區 早位攝像區域之一邊之長度，也就是光學解析度R， 牧佳為像素區域之一邊之長度们，亦即像素區域之 (s i z e )之 i〇G% 〜3〇〇%〇 通常’不良會遍❹個.像㈣域解析声r 若小於像素區域大小们之100% ’亦即單位攝像區域二 於像素區域，會因為光學性的原因而無法感測不良 的，光學解析度R若大於像素區域大小们之職則 會減低，即使發生不良也無法將其辨識為不良，d 確定發生不良之位置。 疋…、法 '另一方面，如圖6b所示，為像素區域非正方形之情形。 在此情況下，像素區域大小们能夠以與像素區域具有相 面積之正四角形之一邊長度為基準。 以下說明調節光學解析度R之方法。 光學解析度R是由以下公式1決定。 (公式1) R=(b，f) * D7f 在此，b為圖2所示之透鏡35與入射點之距離，f 35之焦點距離，D為圖4所示之各攝像單位31之大小。 另方面一透鏡35與入射點之距離^^則根據公式^而以如 下之公式2表示。 (公式2) b二f* (R/D+1) 119481.doc -15- 200806976 右要於檢査中調節光學解析度R，通常不更換攝像機30 及透鏡35 ’而是變更透鏡35與入射點之距離^進行調節。 例如，没像素區域大小d3為300 μπι、攝像單位3 1大小D為 14 μιη、透鏡35之焦點距離£為6〇 μπι<情形時，若要使光 學解析度R為500 μπι，只要根據公式2，將透鏡％與入射點 之距離b調節為約22〇2 mm即可。 當然’亦可更換攝像機30及透鏡35以調節光學解析度 R。 又 另一方面，光學解析度R與攝像單位31之個數n&F〇v之 見度d 1有所闞聯。 例如，如圖3所示，假設攝像機3〇為2台，基板14〇之寬 度 d2為 15 00 mm，FOV之寬度 dl 為 800 mm。 所需之光學解析度R若為5〇〇 μιη，則攝像單位3〗之個數n 以dl/R計算，必須要有約16〇〇個。攝像機3〇之攝像單位 之個數η若小於1600個，則必須使用3台以上之攝像機3 〇， 或是調高光學解析度R。 如此之故，攝像機30之個數、攝像單位31之個數η及光 學解析度R具有密切關係。 藉由所需之光學解析度R而決定透鏡35與入射點之距離b 後，圖2所示之透鏡3 5與攝像機3 0間之距離a可透過以下公 式3決定。 (公式3) a=(D/R) * b 根據前述之例’計算出的a値約為62 mm。透鏡3 5與攝像 119481.doc •16· 200806976 機3 0之間的距離a需配合攝像機3〇之 在計算値之90%〜110%之間調節。 聚焦而進行調節 可The detecting unit 10 includes a light source unit 20 that supplies a test light to the substrate 140 and a camera 30 that senses the brightness of the reflected light reflected by the substrate 140. As shown in FIG. 3, the camera 30 is constituted by a pair. Each camera 3 has an area for sensing brightness, that is, a FOV (field of view). The width dl of the F0V of each camera 30 is larger than half the width d2 of the substrate 140. A part of the F0V of the camera 30 is overlapped, and a part of the F0V is beyond the substrate! 4〇. A lens 35 is provided between the camera 30 and the substrate 140. The light source unit 20 is disposed such that the inspection light is at a fixed angle θι with the incident point of the substrate 140. The light source unit 20 includes a light-emitting lamp 21 and a lamp cover 22 that surrounds the lamp 21 and emits light toward the substrate 140. The globe 22 has an opening toward one of the faces of the substrate 140. The structure of the light source unit 20 can be varied as long as it can supply a line (Hne) type inspection light having uniform intensity. The light source unit 2 may be configured to include a p〇int light source such as a elementary lamp or a metal-halide lamp, and an optical fiber (叩 fiber) for converting a point source into a linear source. As shown in FIG. 4, the camera 30 is a line-array imaging stack in which n imaging units including CCDs (charge-c〇upled device) 31 are arranged in a line. Each of the image units 3 1 is a square, and one side thereof is The length, that is, the size of the camera unit 31 (Slze) & D is indicated. Each of the camera units 3 1 of the camera 3 is disposed so as to be able to receive the light emitted from the lamp 21 and reflected by the substrate 14 to be positioned at a fixed angle 02 to the incident point of the substrate 140. -13- 1 J9481.doc 200806976 The drive unit 4 is moved so that the detecting unit (7) scans the entire substrate 140. In order to scan the entire substrate 14, the length of the lamp 21 is preferably set to be slightly larger than the width d2 of the substrate MO. When the entire substrate 140 is scanned, the angle between the incident point and the light source portion and the angle θ2 between the incident point and the camera 30 are maintained constant. The intensity of the reflected light sensed in the camera 30 may vary depending on the thickness of the pattern 142 during scanning. Although not shown, the substrate inspection apparatus 1 may further include a control unit and the "Hai technology system determines whether the pattern '142 is defective based on the sensed brightness 値. Fig. 5 is a view for explaining inspection light emitted from the substrate inspection apparatus according to the first embodiment of the present invention. The inspection light is non-parallel light in a portion close to the light source portion 20, but is incident in a substantially parallel state when incident on the substrate 140. For this reason, the essence is parallel and is called the coherent (c〇herem) state. In order to generate such inspection light in the same state, the distance c between the incident point and the light source unit 20 must be maintained at a fixed level, for example, about 3 m or more. In order to check the substrate 彳 by double-checking the reflected light, the camera 3 must have an optical resolution of the field. That is, the photon resolution of each camera unit η of the camera 3 must have an appropriate range. In this regard, an example in which the color filter substrate 120 is to be inspected will be described. As shown in the figure, a plurality of pixel regions are formed on the color filter substrate 120. The pixel money system (4) is composed of a plurality of sub-pixels, and is a basic unit constituting the surface. As shown in the figure, the pixel area includes three areas each representing red, 319481.doc -14·200806976 blue and green, and the length of one side is square to find each unit of the image unit. The length of one side of the early imaging area, that is, the optical resolution R, is the length of one side of the pixel area, that is, the size of the pixel area (i)G% 〜3〇〇%〇 usually 'bad If the image resolution area is less than 100% of the size of the pixel area, that is, the unit imaging area is in the pixel area, it may not be able to sense the defect due to optical reasons, and the optical resolution R is greater than The size of the pixel area will be reduced, and even if it is bad, it cannot be identified as bad, and d determines the location where the defect occurs.疋..., method 'On the other hand, as shown in Fig. 6b, the case where the pixel area is non-square. In this case, the pixel area sizes can be based on the length of one side of the regular square having a phase area with respect to the pixel area. The method of adjusting the optical resolution R will be described below. The optical resolution R is determined by the following formula 1. (Formula 1) R = (b, f) * D7f Here, b is the distance between the lens 35 shown in Fig. 2 and the incident point, the focal length of f 35, and D is the size of each imaging unit 31 shown in Fig. 4. . On the other hand, the distance between the lens 35 and the incident point is expressed by the following formula 2 according to the formula ^. (Formula 2) b 2 f* (R/D+1) 119481.doc -15- 200806976 Right to adjust the optical resolution R during inspection, usually without changing the camera 30 and the lens 35' but changing the lens 35 and the incident point The distance ^ is adjusted. For example, if the pixel area size d3 is 300 μπι, the imaging unit 3 1 size D is 14 μm, and the focal length of the lens 35 is 6 〇μπι < in case, if the optical resolution R is 500 μπι, as long as according to Formula 2 The distance b between the lens % and the incident point can be adjusted to about 22 〇 2 mm. Of course, the camera 30 and the lens 35 can also be replaced to adjust the optical resolution R. On the other hand, the optical resolution R is proportional to the number of imaging units 31 n & F 〇 v visibility d 1 . For example, as shown in Fig. 3, assuming that the number of cameras 3 is 2, the width d2 of the substrate 14 is 15 00 mm, and the width dl of the FOV is 800 mm. If the required optical resolution R is 5 〇〇 μιη, the number n of imaging units 3 is calculated by dl/R, and there must be about 16 。. If the number of camera units η of the camera 3 is less than 1600, it is necessary to use three or more cameras 3 〇 or to increase the optical resolution R. For this reason, the number of cameras 30, the number η of imaging units 31, and the optical resolution R have a close relationship. After determining the distance b between the lens 35 and the incident point by the required optical resolution R, the distance a between the lens 35 and the camera 30 shown in Fig. 2 can be determined by the following formula 3. (Formula 3) a = (D/R) * b The calculated a 根据 according to the above example ' is about 62 mm. Lens 3 5 and camera 119481.doc •16· 200806976 The distance a between the machine 3 0 needs to be adjusted with the camera 3〇 between 90% and 110% of the calculation. Adjust by focusing
圖7係用以說明檢査光之繞射之圖式。 形成於基板140上之圖案142如Λ愛念▲土 '七xb 如為黑色料之情形時可設 為網格狀，如為彩色濾光片之情形時 J 6又馮依固定問隱 置之線狀，如為柱間隔件之情形時 & 』5又為均勻配置之點 此種圖案142對於入射之檢査 .· 先/、有繞射光栅 (dlffractlng grating)之作用。因此，從光源2〇入設至圖案 M2之光線會繞射，形纽波長不_區分之頻譜時 反射。 端看由圖案142所反射並繞射之光_譜，可知其強度 因波長而改變。 以下參照圖8〜圖10 ’說明因圖案142之高度而使得攝像 機30中所辨識之反射光產生亮度差之原因。 圖8係用以說明因圖案之厚度而產生之反射光偏移之圖 式；圖9a及圖9b係表示因圖案之厚度而產生之繞射頻譜之 照片；圖10係用以說明因圖案之厚度而產生之亮度變化之 圖式。 在微粒等之不良要因下，圖案142之厚度會因位置而改 變。厚度不同之圖案142在基板14〇上可以點形態表示，亦 可以線形態表示。 如圖8所示，可知圖案142之厚度會使得反射光之路徑產 生偏差。亦即，在由正常圖案142&所反射（a)之情形與由厚 119481.doc -17- 200806976 度較厚之圖案142b所反射（b)之情形中， 不同，因此造成反射光之偏差。 由於反射點之高度 圖9a係表示圖案142之厚度為固 、h形之繞射箱级， 圖9b係表示圖案142之厚度非固定的 ^ ^ ^ 月形之繞射頻级。 端看圖9b，可知在圖案142之厚庚非门 π 又F固定之情形中， 頭所示部分表示與周邊不同之形自、|。 心、亦即，因圖幸142之 厚度而造成反射光偏差，導致赛声持辦 ^ 儿度改變之部分。Figure 7 is a diagram for explaining the diffraction of the inspection light. The pattern 142 formed on the substrate 140 can be set to a grid shape if the case is a black material, for example, in the case of a color filter, J 6 and Feng Yi are fixed. Linear, if it is a column spacer, & 5 is a point of uniform configuration. This pattern 142 is for the inspection of the incident. · First /, there is a diffraction grating (dlffractlng grating). Therefore, the light that is diverged from the light source 2 to the pattern M2 is diffracted, and the wavelength of the shape is not reflected when the wavelength is not differentiated. Looking at the spectrum of light reflected and diffracted by the pattern 142, it is known that the intensity changes due to the wavelength. The reason why the reflected light recognized in the camera 30 is caused to have a luminance difference due to the height of the pattern 142 will be described below with reference to Figs. 8 to 10'. Figure 8 is a diagram for explaining the shift of the reflected light due to the thickness of the pattern; Figures 9a and 9b are photographs showing the diffraction spectrum due to the thickness of the pattern; Figure 10 is for explaining the pattern A pattern of brightness changes due to thickness. The thickness of the pattern 142 changes depending on the position under the cause of the particles or the like. The pattern 142 having a different thickness may be represented in a dot form on the substrate 14A, or may be represented in a line form. As shown in Fig. 8, it is understood that the thickness of the pattern 142 causes the path of the reflected light to vary. That is, in the case where (a) reflected by the normal pattern 142 & and (b) reflected by the thicker pattern 142b thick 119481.doc -17-200806976, the deviation of the reflected light is caused. The height of the reflection point is shown in Fig. 9a as a diffraction box level in which the thickness of the pattern 142 is solid and h-shaped, and Fig. 9b is a diffraction level in which the thickness of the pattern 142 is not fixed. Referring to Fig. 9b, it can be seen that in the case where the thick Gagger gate π and F of the pattern 142 are fixed, the portion indicated by the head indicates a shape different from the periphery. The heart, that is, the deviation of the reflected light due to the thickness of Tu Xing 142, causes the game to hold the part of the change.
端看圖10 ’在正㈣案142a即⑷之情形與較厚圖案而 之情形中，繞射頻譜之形態幾乎類似。 ’、 機30所辨識之波長互不相同。 Q疋之攝像 在⑷之情形中，於攝像㈣中辨識到具有最高㈣的波 長之光線。反之，在（b)之情形中，於攝 、攝像棧3 0中辨識到且 有較低強度的波長之光線。因此，攝像機3g在較厚圖案 142b上感測到的亮度比正常圖案M2a為低。 ^ 焭度感測係遍佈於基板14〇全體而掃描檢査光之同時進 行]透過掃描測定全體圖案142上之反射光亮度，將其進 行匹配〇 '、 從如此匹配而得的亮度資料來看，其中感測到亮度比周 圍低的部分’由此便可判斷出圖案142之厚度不均句之 分。 σ 圖8〜圖10說明圖案142厚度越高則亮度越低之原理。惟 圖案142之厚度不同之情形時，反射光之亮度高低與否將 错由光源部2〇與攝像機3〇之位置關係而決定。亦即，攝像 抽^ 3〇彳丈具有一般厚度的圖案142所反射之光線之繞射圖案 I1948i.doc -18- 200806976 上’若感測到較低強度之光線時，便能夠更強烈感測到1 有其他厚度的圖案142所反射之光線。、 根據所測得之亮度值來料圖案142之不良之基準有復 夕例如將7C度值數値化，而亮度比周圍高過超出固定 水準之部分即可判定為不良。 ^不良部分可以點或線表示。 若判定圖案m為不良，可除去圖案142再重新形成，或 將基板14 0報廢。Looking at Fig. 10' in the case of the positive (four) case 142a, that is, the case of (4) and the thicker pattern, the form of the diffraction spectrum is almost similar. The wavelengths recognized by the machine 30 are different from each other. Q疋's camera In the case of (4), the light with the highest (four) wavelength is recognized in the camera (4). On the other hand, in the case of (b), light of a lower intensity wavelength is recognized in the camera and camera stack 30. Therefore, the brightness sensed by the camera 3g on the thicker pattern 142b is lower than the normal pattern M2a. ^ The sensitivity sensing system is spread over the entire substrate 14 while scanning the inspection light.] The brightness of the reflected light on the entire pattern 142 is measured by scanning, and the matching is performed, and the luminance data obtained by such matching is observed. The portion in which the brightness is lower than the surroundings is sensed, and thus the thickness unevenness of the pattern 142 can be judged. σ Figures 8 to 10 illustrate the principle that the higher the thickness of the pattern 142, the lower the brightness. However, when the thickness of the pattern 142 is different, whether the brightness of the reflected light is high or low is determined by the positional relationship between the light source unit 2A and the camera 3. That is, the image of the diffraction pattern of the light reflected by the pattern 142 of the general thickness is I1948i.doc -18-200806976. If the light of lower intensity is sensed, it can be more strongly sensed. To 1 there is light reflected by pattern 142 of other thickness. According to the measured brightness value, the basis of the defect of the incoming pattern 142 may be reduced, for example, by subtracting the 7C degree value, and the brightness is higher than the surrounding portion exceeding the fixed level. ^ Bad parts can be represented by points or lines. If it is determined that the pattern m is defective, the pattern 142 can be removed and reformed again, or the substrate 14 0 can be discarded.
圖11係表示透過實驗而得之亮度影像之照片。 圖11係針對彩色濾光片測得之影像，可觀察四角所示部 刀中與周圍焭度不同之點。此種不良是由於在感光有機層 形成後，有微粒流入感光有機層之上部而產生。 除了圖1 1所不之點以外，亮度不同之部分亦可以線或面 形狀表示。 從圖11來看，明確顯示出圖案不良，容易判定不良。另 一方面，所測得之亮度資料可視需要予以多樣化變形、操 作，以供判定圖案不良之用。 圖12係表示本發明之第2實施形態之基板檢査裝置之圖 式0 如第1實施形態中之說明，光源2〇之檢査光必須以同調 狀悲入射至基板140。為使檢査光成為同調狀態，基板14〇 與光源20之間必須保有相當之距離。因此，會產生基板檢 査裝置1之體積極大化之問題。 根據第2實施形態，於光源2〇之燈罩22上設有狹縫22a。 狹缝22a會限制檢査光之出射角，如此一來，檢査光即使 11948i.doc -19- 200806976 在丁乂短之距離内也會成為同調狀態。如此—來，即可縮減 光_與基板14()之間的距離们，而能夠使基板裝 之大小減小。 以上已圖不亚說明本發明之部分實施形態，但舉凡且備 本發明所屬技術領域之_般知識之技藝人士，當可在不悻 本^ s之原貝u或精神之前提下將本實施形態進行修改。 本毛明之觀圍係根據所附之請求項及其相等物而決定。 【圖式簡單說明】 圖1係液晶裝置之剖面圖。 圖係表示本發明之第！實施形態之基板檢查裝置之圖 式。 圖3係用以說明本發明之第丨實施形態之基板檢査裝置中 之攝像機配置之圖式。 圖4係用以說明本發明之第丨實施形態之基板檢査裝置中 之攝像機構造之圖式。 圖5係用以說明由本發明之第i實施形態之基板檢査裝置 所出射之檢査光之圖式。 圖6a係用以說明像素區域之大小與光學解析度之關係之 圖式。 圖6b係用以說明像素區域之大小與光學解析度之關係之 圖式。 圖7係用以說明檢査光之繞射之圖式。 圖8係用以說明因圖案之高度而產生之反射光偏移之圖 式0 11948l.doc -20· 200806976 圖9a係表示因圖案之高度而產生之繞射頻譜之照片。 圖9b係表示因圖案之高度而產生之繞射心之照片。 圖係用以說明因圖案之高度而產生之亮度變化之圖 式。 圖π係表示透過實驗而得之亮度影像之照片。 圖係表示本發明之第2實施形態之基板檢査裝置之圖 式。 【主要元件符號之說明】 10 20 21 22 30 31 35 40 50 141 142 檢测部 光源部 燈 燈罩 攝像機 攝像單位 透鏡 載置部 驅動部 絕緣基板 圖案 119481.doc -21 -Figure 11 is a photograph showing a luminance image obtained through an experiment. Fig. 11 is an image measured for a color filter, and the point in the blade shown by the four corners is different from the surrounding twist. This defect is caused by the flow of fine particles into the upper portion of the photosensitive organic layer after the formation of the photosensitive organic layer. In addition to the points not shown in Fig. 11, the portions of different brightness may also be represented by lines or plane shapes. As seen from Fig. 11, it is clearly shown that the pattern is defective, and it is easy to judge the defect. On the other hand, the measured brightness data can be varied and manipulated as needed to determine the pattern defect. Fig. 12 is a view showing a substrate inspection apparatus according to a second embodiment of the present invention. As described in the first embodiment, the inspection light of the light source 2 must be incident on the substrate 140 in a homogenous manner. In order to make the inspection light into a coherent state, a considerable distance must be maintained between the substrate 14A and the light source 20. Therefore, there is a problem that the volume of the substrate inspection apparatus 1 is maximized. According to the second embodiment, the slit 22a is provided in the globe 22 of the light source 2A. The slit 22a limits the exit angle of the inspection light, and as a result, the inspection light becomes a coherent state even if the distance of 11948i.doc -19-200806976 is short. In this way, the distance between the light and the substrate 14 can be reduced, and the size of the substrate can be reduced. The embodiments of the present invention have been described above, but those skilled in the art having the knowledge of the present invention may submit the present implementation before the original or the spirit of the present invention. The form is modified. The scope of the present invention is determined in accordance with the attached claims and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a liquid crystal device. The figure shows the first part of the invention! The pattern of the substrate inspection apparatus of the embodiment. Fig. 3 is a view for explaining a configuration of a camera in a substrate inspecting apparatus according to a third embodiment of the present invention. Fig. 4 is a view for explaining a structure of a camera in a substrate inspection apparatus according to a third embodiment of the present invention. Fig. 5 is a view for explaining inspection light emitted from the substrate inspection apparatus according to the i-th embodiment of the present invention. Figure 6a is a diagram for explaining the relationship between the size of a pixel region and optical resolution. Figure 6b is a diagram for explaining the relationship between the size of a pixel region and optical resolution. Figure 7 is a diagram for explaining the diffraction of the inspection light. Fig. 8 is a view for explaining the shift of the reflected light due to the height of the pattern. Equation 0 11948l.doc -20· 200806976 Fig. 9a is a photograph showing the diffraction spectrum due to the height of the pattern. Figure 9b is a photograph showing the diffracted heart due to the height of the pattern. The figure is used to illustrate the pattern of brightness changes due to the height of the pattern. Figure π shows a photograph of a luminance image obtained through an experiment. The drawings show the drawings of the substrate inspection apparatus according to the second embodiment of the present invention. [Description of main component symbols] 10 20 21 22 30 31 35 40 50 141 142 Detection section Light source section Lamp Shade Camera Camera unit Lens Mounting section Driving section Insulating board pattern 119481.doc -21 -