TW200805707A - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Semiconductor device and method of manufacturing semiconductor device Download PDF

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Publication number
TW200805707A
TW200805707A TW096103824A TW96103824A TW200805707A TW 200805707 A TW200805707 A TW 200805707A TW 096103824 A TW096103824 A TW 096103824A TW 96103824 A TW96103824 A TW 96103824A TW 200805707 A TW200805707 A TW 200805707A
Authority
TW
Taiwan
Prior art keywords
light
substrate
semiconductor device
emitting device
cover
Prior art date
Application number
TW096103824A
Other languages
English (en)
Chinese (zh)
Inventor
Akinori Shiraishi
Yuichi Taguchi
Masahiroa Sunohara
Hideaki Sakaguchi
Naoyuki Koizumi
Murayama Kei
Higashi Mitsutoshi
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200805707A publication Critical patent/TW200805707A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW096103824A 2006-02-02 2007-02-02 Semiconductor device and method of manufacturing semiconductor device TW200805707A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006025649A JP4996101B2 (ja) 2006-02-02 2006-02-02 半導体装置及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200805707A true TW200805707A (en) 2008-01-16

Family

ID=38038555

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103824A TW200805707A (en) 2006-02-02 2007-02-02 Semiconductor device and method of manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US7825423B2 (OSRAM)
EP (1) EP1816687A2 (OSRAM)
JP (1) JP4996101B2 (OSRAM)
TW (1) TW200805707A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455368B (zh) * 2011-10-14 2014-10-01 Advanced Optoelectronic Tech 發光二極體的封裝方法

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100883075B1 (ko) * 2007-03-02 2009-02-10 엘지전자 주식회사 전계발광소자
DE102008005344A1 (de) * 2007-09-21 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
EP2048717A1 (en) * 2007-10-10 2009-04-15 Unity Opto Technology Co., Ltd. Structure of light-emitting diode
JP5089336B2 (ja) 2007-10-29 2012-12-05 新光電気工業株式会社 パッケージ用シリコン基板
JP4912275B2 (ja) 2007-11-06 2012-04-11 新光電気工業株式会社 半導体パッケージ
JP2010074117A (ja) * 2007-12-07 2010-04-02 Panasonic Electric Works Co Ltd 発光装置
KR100998009B1 (ko) * 2008-03-12 2010-12-03 삼성엘이디 주식회사 발광 다이오드 패키지 및 그 제조 방법
JP5341915B2 (ja) * 2008-03-28 2013-11-13 パナソニック株式会社 樹脂成型品、半導体発光光源、照明装置及び樹脂成型品の製造方法
DE102008025491A1 (de) * 2008-05-28 2009-12-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Leiterplatte
US8058669B2 (en) * 2008-08-28 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode integration scheme
JP2010135488A (ja) * 2008-12-03 2010-06-17 Toshiba Corp 発光装置及びその製造方法
DE102009005547A1 (de) * 2009-01-20 2010-07-29 R. Stahl Schaltgeräte GmbH Gekapselte Leuchtdiodenanordnung
KR101064026B1 (ko) * 2009-02-17 2011-09-08 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
JP5327042B2 (ja) * 2009-03-26 2013-10-30 豊田合成株式会社 Ｌｅｄランプの製造方法
US20100301728A1 (en) * 2009-06-02 2010-12-02 Bridgelux, Inc. Light source having a refractive element
EP2597689B1 (en) * 2010-07-22 2019-10-02 Kyocera Corporation Wavelength converted light emitting device
KR101714042B1 (ko) * 2010-08-05 2017-03-08 엘지이노텍 주식회사 발광 소자 패키지
WO2012124473A1 (ja) * 2011-03-15 2012-09-20 京セラ株式会社 発光装置
JP5769482B2 (ja) * 2011-04-18 2015-08-26 セイコーインスツル株式会社 ガラス封止型パッケージの製造方法、及び光学デバイス
JP2013004901A (ja) * 2011-06-21 2013-01-07 Nippon Kasei Chem Co Ltd Ｌｅｄデバイス
TW201310126A (zh) * 2011-08-18 2013-03-01 鴻海精密工業股份有限公司 發光裝置
KR101887942B1 (ko) * 2012-05-07 2018-08-14 삼성전자주식회사 발광소자
JP6139071B2 (ja) * 2012-07-30 2017-05-31 日亜化学工業株式会社 発光装置とその製造方法
DE102013104240B4 (de) 2013-04-26 2015-10-22 R. Stahl Schaltgeräte GmbH Explosionsgeschützte Anordnung elektrischer und/oder elektronischer Bauelemente
JP6490932B2 (ja) * 2013-09-16 2019-03-27 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
DE102013111374A1 (de) * 2013-10-15 2015-04-16 R. Stahl Schaltgeräte GmbH Explosionsgeschützte Anordnung für elektrische und/oder elektronische Bauelemente
CN104124324B (zh) * 2014-08-06 2017-03-01 华中科技大学 一种led封装玻璃及其制备方法和应用
US10347814B2 (en) 2016-04-01 2019-07-09 Infineon Technologies Ag MEMS heater or emitter structure for fast heating and cooling cycles
US10681777B2 (en) * 2016-04-01 2020-06-09 Infineon Technologies Ag Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures
US10559723B2 (en) 2017-08-25 2020-02-11 Rohm Co., Ltd. Optical device
CN111556716B (zh) * 2018-01-29 2024-04-30 菲利普莫里斯生产公司 用于气溶胶生成系统的照明单元
US11758948B2 (en) 2018-01-29 2023-09-19 Altria Client Services Llc Lighting unit for aerosol-generating systems
US11178392B2 (en) * 2018-09-12 2021-11-16 Apple Inc. Integrated optical emitters and applications thereof
KR102872847B1 (ko) * 2018-12-27 2025-10-20 덴카 주식회사 형광체 기판, 발광 기판 및 조명 장치
EP3888204B1 (en) 2019-02-04 2022-12-14 Apple Inc. Vertical emitters with integral microlenses
WO2021231033A1 (en) 2020-05-10 2021-11-18 Apple Inc. Folded optical conjugate lens
JP7239840B2 (ja) * 2020-08-31 2023-03-15 日亜化学工業株式会社 発光装置の製造方法
US11994694B2 (en) 2021-01-17 2024-05-28 Apple Inc. Microlens array with tailored sag profile
WO2023042461A1 (ja) * 2021-09-14 2023-03-23 ソニーグループ株式会社 半導体発光デバイス
CN114864796A (zh) * 2022-07-05 2022-08-05 至芯半导体(杭州)有限公司 一种紫外器件封装结构及制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846288A (OSRAM) * 1971-10-13 1973-07-02
JPH0328467Y2 (OSRAM) * 1985-12-28 1991-06-19
JPH06350132A (ja) * 1993-06-08 1994-12-22 Victor Co Of Japan Ltd 半導体発光素子アレイ
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JP2003110146A (ja) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
JP3912607B2 (ja) * 2002-06-19 2007-05-09 サンケン電気株式会社 半導体発光装置の製法
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
JP4280050B2 (ja) * 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
JP4834198B2 (ja) * 2002-12-25 2011-12-14 独立行政法人科学技術振興機構 発光素子装置、受光素子装置、光学装置、フッ化物結晶
KR20040092512A (ko) * 2003-04-24 2004-11-04 (주)그래픽테크노재팬 방열 기능을 갖는 반사판이 구비된 반도체 발광장치
EP1484802B1 (en) * 2003-06-06 2018-06-13 Stanley Electric Co., Ltd. Optical semiconductor device
JP4138586B2 (ja) * 2003-06-13 2008-08-27 スタンレー電気株式会社 光源用ｌｅｄランプおよびこれを用いた車両用前照灯
US7560820B2 (en) * 2004-04-15 2009-07-14 Saes Getters S.P.A. Integrated getter for vacuum or inert gas packaged LEDs
JP4996463B2 (ja) * 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
DE102005042778A1 (de) * 2004-09-09 2006-04-13 Toyoda Gosei Co., Ltd., Nishikasugai Optische Festkörpervorrichtung
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US7798678B2 (en) * 2005-12-30 2010-09-21 3M Innovative Properties Company LED with compound encapsulant lens
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455368B (zh) * 2011-10-14 2014-10-01 Advanced Optoelectronic Tech 發光二極體的封裝方法

Also Published As

Publication number Publication date
JP4996101B2 (ja) 2012-08-08
JP2007208041A (ja) 2007-08-16
EP1816687A2 (en) 2007-08-08
US20070194712A1 (en) 2007-08-23
US7825423B2 (en) 2010-11-02

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