TW200805476A - Method for cutting wafer - Google Patents

Method for cutting wafer Download PDF

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Publication number
TW200805476A
TW200805476A TW96120367A TW96120367A TW200805476A TW 200805476 A TW200805476 A TW 200805476A TW 96120367 A TW96120367 A TW 96120367A TW 96120367 A TW96120367 A TW 96120367A TW 200805476 A TW200805476 A TW 200805476A
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Taiwan
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cutting
wafer
water
carbon dioxide
pad
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TW96120367A
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Chinese (zh)
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Loy Seng Liew
Masayoshi Teramoto
Rena Oryoji
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Disco Corp
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Publication of TW200805476A publication Critical patent/TW200805476A/en

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  • Cleaning Or Drying Semiconductors (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

To provide a wafer cutting method that enables to relatively inexpensively and simply divide a wafer into individual semiconductor chips while maintaining cleaning effects without corrosion of a bonding pad including aluminum. The method is devised by focusing attention on the point that one reason that causes corrosion of the bonding pad is due to a chemical reaction. The wafer W is cut with a cutting blade 21 while feeding cold cutting water to the wafer W mixed with carbon dioxide at less than 15 DEG C, so as to make a reaction speed of aluminum elution slow. Consequently, it is possible to suppress the corrosion of the bonding pad.

Description

200805476 (1) 九、發明說明 【發明所屬之技術領域】 本發明係有關,將形成焊墊在表面之晶圓,分割成一 個一個的半導體晶片的晶圓之切削方法。 【先前技術】 1C,LSI,CCD等半導體晶片是藉由切割道區劃而被 複數個形成之半導體晶圓,是以備有切削用刀片的切削裝 置來分割成一個一個半導體晶片。 在此,於切割道的切削時,因爲是由切削用刀片在高 速下一邊迴轉一邊切入晶圓,爲了冷卻晶圓與切削用刀片 的接觸部分,對接觸部分噴出切削水。又,切削水有防止 因切削而產生的切削屑附著到晶圓的同時,除去附著的切 削屑並洗淨晶圓表面的作用。作爲這樣的切削水,由於使 用純水的話比電阻値較大而且容易產生靜電,藉由在純水 中混入二氧化碳(co2)使其活性化的方法,在讓切削屑 不附著於半導體晶圓的表面上這方面考慮到了許多。 專利文獻1日本特開2002-64352號公報 【發明內容】 發明欲解決之課題 然而,混入二氧化碳而活性化的切削水,酸性是很強 的,是會侵蝕形成在半導體晶片的表面的焊墊,特別是主 要由鋁所形成的焊墊;鋁因爲離子化而從焊墊溶出,產生 200805476 (2) 腐蝕(溶出),有造成半導體晶片的品質低下的問題。 另一方面,爲了抑制母體金屬或焊墊的侵蝕而將二氧 化碳的濃度調整爲較低的情況下,洗淨效果會變的不充分 〇 再且,也有使用把在焊墊表面把形成化合物的絕緣薄 膜、含到純水的切削液的方式,來抑制焊墊的腐蝕的方法 (例如,參閱專利文獻1),但是因爲高價,而且切削液 的排出方法及配管及裝置的洗淨等維修會相當繁雜,並不 適合實際使用。 本發明係,其目的在於,以上述的方法爲鑑,以提供 一個比較便宜而簡單的不腐蝕含鋁的焊墊並維持洗淨效果 下,能將晶圓分割成一個一個的半導體晶片的晶圓之切削 方法。 爲解決課題之手段 爲了解決上述的課題,並達成目的,與本發明有關晶 圓之切削方法,係使用切削裝置,該切削裝置具備有:將 晶圓固定之夾盤、和具備有切削保持在該夾盤上的晶圓之 切削用刀片的切削手段 '和供給合混有二氧化碳之切削水 於晶圓的切削水供給手段,將把混有鋁之焊墊形成在表面 的晶圓,切削成一個一個半導體晶片;其特徵爲:一邊供 給已混合有二氧化碳之攝氏1 5度以下的切割水給晶圓, 一邊用前述的切削用刀片來切削晶圓。 200805476 (3) 發明效果 根據與本發明有關晶圓的切削方法,焊墊的腐鈾原因 雖然不明確,由化學反應而來的原因之一點予以注目:靠 著一邊把混合有二氧化碳的攝氏1 5度以下的冷切削水供 給於晶圓、一邊進行切削處理的方式,藉著使鋁的溶出反 應速度變慢,而能夠抑制焊墊的腐鈾;據此,可以使用混 入必要濃度二氧化碳的切削水,半導體晶圓的表面也不會 因切削屑污染並可維持洗淨效果;過去,高價而且使維修 繁雜的切削液也沒有使用的必要,經濟且簡單的實施可能 的效果會奏效。 【實施方式】 以下,關於實施本發明的最佳的型態之晶圓的切削方 法,是參照圖面並說明之。 圖1係,顯示有實施本發明的實施型態之晶圓之切削 方法的切削裝置的構成例的槪略立體圖;圖2是,顯示有 適用在本實施型態之晶圓的構成例之立體圖:圖3是,顯 示切削手段以及切削供水手段的構成例之立體圖。切削裝 置1 〇係同於,搬出入手段1 3、搬送手段14、洗淨手段 15、搬送手段16,具備有將與框架F成爲一體的晶圓w 固定之夾盤17和,定位用的相機1 8和,夾盤17所固定 之晶圓W予以切削之切削手段2 0和,供給切削水至晶圓 W的切削水供給手段30。 首先,晶圓W係藉由裝著在環狀的框架F的黏貼膠 200805476 (4) 帶T來黏貼住,介由黏貼膠帶以被支撐在框架F的狀態下 被收容到卡匣12。晶圓W係,如圖2所示,藉著在表面 Wa被形成格子狀的複數個切割道S來區劃成複數個領域 ,該已被區劃的領域會形成IC、LSI等半導體晶片11。 如此構成之晶圓W係,如圖1所示,於著裝在環狀的框 架F的黏貼膠帶T,把表面Wa爲上側貼著背面。 搬出入手段1 3係,將收納到卡匣部1 2的晶圓W搬 # 出到搬送手段1 4可以搬送的載置領域的同時,也將切削 處理完畢的晶圓W搬入到卡匣部1 2。搬送手段1 4係,把 藉著搬出入手段13搬出到載置領域的晶圓W搬送至夾盤 1 7上。又,洗淨手段1 5係,把切削手段20處理完的晶 圓W予以洗淨。搬送手段16係,把切削手段20處理完 的晶圓W從夾盤1 7上搬送到洗淨手段1 5。 又,夾盤17係,連結到未圖示的驅動源,是爲可以 迴轉。又,夾盤〗7係’藉由滾珠螺桿、螺帽、脈衝馬達 # 等輸送機構,設成可以移動在X軸方向。攝像機1 8係, 拍攝保持在夾盤1 7的晶圓W之表面;未圖示之對準部係 ,以透過攝像機1 8所取得之畫像爲基準,檢測出必須切 削的部分,提供到切削手段20的切削動作之定位位置。 切削手段20係,把保持在夾盤1 7的晶圓w以切削 用刀片21來切削之故,被設置成藉由滾珠螺桿、螺帽、 脈衝馬達等未圖示之切入輸送機構,設成可以昇降移動在 Z軸方向;又,藉由滾珠螺桿、螺帽、脈衝馬達等未圖示 之分度輸送機構,設成可以移動在y軸方向。切割用刀 -8- 200805476 (5) 片2 1係,如圖3所示,於主軸殼2 2內支持成可以迴轉 以刀片外罩23覆蓋。 切削水供給手段3 0係,把混合有作爲帶電防止劑 二氧化碳(C〇2 )的15°(:以下的切削水供給於晶圓|, 備有:蓄備有純水的純水源3 1、與定溫水供給裝置3 2 與二氧化碳供給裝置3 3。由純水源31所供給的純水, 部經由通過定溫水供給裝置3 2而予以定溫,本實施型 • 下則爲1 5 °c以下的定溫,例如維持於1 5 °c。二氧化碳 給裝置33係’由定溫水供給裝置32供給的定溫狀態的 水中,藉由幫浦送入一定量的二氧化碳來,將純水與二 化碳以指定的比例予以混合。又,切削水供給手段3 0 具備有:於刀片外罩23配設於切割用刀片21兩側,用 供給至晶圓W與切割用刀片21之接觸部分、混合有二 化碳之1 5 °C之冷卻用之切削水之切削水供給噴嘴3 5 ; 配設於刀片外罩23、朝切削水供給噴嘴3 5周邊的晶圓 • 上噴射混合有二氧化碳之1 5 °C之洗淨用之切削水用之 射噴嘴3 6 ;與形成於刀片外罩23、針對切削水供給噴 3 5和噴射噴嘴3 6用的切削水,由二氧化碳供給裝置 來流入管狀構造的切削水流入部3 7。尙且,切削水的 量係,以內藏於切削裝置1 0的未圖示的流量控制器來 整。 關於使用這樣的切削裝置1 0的晶圓W的切削方法 吸引保持在夾盤17的晶圓w係,夾盤1 7移動在X軸 向’到攝像機1 8的正下方予以定位,以圖案匹配等處 之 具 全 態 供 純 氧 係 於 氧 與 W 噴 嘴 33 流 調 方 理 -9- 200805476 (6) 來檢出切削領域,進行切削領域與切削用刀片21的Y軸 方向位置之分度。分度之後,夾盤17在進一步移動在X 軸方向的同時,高速迴轉中的切削用刀片21於Ζ軸方向 以特定量切入被送過來,把晶圓W沿著所希望的切割道S 切削。 進行這樣的切削處理的時候,以往的話,是以1 5 °C 〜3 0 °C的切削水來供給給晶圓W以進行冷卻與洗淨(參 • 照專利文獻1 ’段落〇〇 1 9 );在本實施型態,一邊由切削 水供給噴嘴3 5與噴射噴嘴3 6,以混合有二氧化碳之1 5 °C 以下的切削水供給晶圓W,一邊以切削用刀片21切削晶 圓W,使其分割成爲一個一個半導體晶片1 1的狀態。亦 即’焊墊的腐飩原因雖然不明確,著眼於作爲其中一個原 因之由來於化學反應之一點:以一邊供給混合有二氧化碳 的1 5 °C以下的冷切削水於晶圓一邊進行切削處理的方式 ,藉著使鋁的溶出反應速度變慢,是可以抑制焊墊的腐飩 參 以下,關於本實施的型態之晶圓的切削方法之效果, 根據實驗結果來驗證。首先,說明有關實驗條件。晶圓切 削的實驗條件係: 晶圓W :直徑200mm,厚度〇.3mm之矽晶圓 切削用刀片21 :厚度0.04mm之電鑄刀片 切削用刀片21之回轉數:3000〇rpm 夾盤17之輸送速度:30mm/s 切入量:從上而下5 0 /z m -10- 200805476 (7) 切削方法:兩面切削方式 切削索引:1.5mm 1片晶圓W之切削時間:30分 切削水:純水+二氧化碳混合水(比電阻値〇. 5 Μ Ω • cm ) '的條件下,把切削水之溫度,以5艺、10°0、15它、18艺 、22°C、25°C、28°C ’各自以1片進行切削加工實驗。 • 對於這樣的實驗結果,進行以下的評價。首先,關於 切削對象的晶圓W,圖四中以p i〜P 5表示固定的5個位 置之各個半導體晶片11選定爲評價確認用,被選定的半 導體晶片1 1、如圖5所示1邊之所有焊墊1 1 a以電子顯 微鏡觀察’將溶出所發生之溶出孔予以計數。焊墊1 1 a係 ,主要以鋁所形成。計數之焊墊1 1 a之電子顯微鏡下所攝 影之相片以圖6-1、圖6-2表示。圖6-1係,例如於位置 P】存在之焊墊1 1 a之切削加工之表面狀態予以表示之相片 φ ,發生腐蝕的地方,因爲大部分很小,不以溶出孔來計數 。另一方面,圖6-2係,例如於位置Pi存在之焊墊1 la 之切削加工之表面狀態予以表示之相片,如相片中以圓圈 圍起來表示3//m以上之溶出孔存在的狀態爲計數之對象 〇 這樣的評價確認結果以圖7來表示。溶出孔之槪算面 積係,如圖5所表示,3 · 9 m m X 0 · 0 8 X 5片=1 · 5 6 m m 2,在這 裡係用來表示,焊墊11a之單位面積1 mm2下之溶出孔個 數予以換算之結果。圖8係,圖7所表示之評價確認結果 •11 - 200805476 (8) 予以圖表化表示之圖。根據評價確認結果:判明切削水之 溫度以1 5 °C爲界,溶出孔個數有很大的變化;比1 5 °C高 的狀態下化學反應被促進,而有相當溶出孔個數相對的’ 1 5 °C以下的狀態下化學反應被抑制,個數幾乎是〇。又’ 圖9係,實驗結果中,切削水之溫度爲29°C、22°C、15 °C的狀態下焊墊1 1 a之切削加工之表面狀態予以表示之電 子顯微鏡相片。圖9中,判明了比較黑的部分所表示的爲 φ 溶出孔,切削水溫度爲1 5 °C之狀態下就算是溶出孔存在 也是極小,實用上爲沒有問題的缺陷。 若由本實施型態之晶圓 W之切削方法,判明以供給 混合有二氧化碳的1 5度冷切削水於晶圓W的狀態下同時 以切削用刀片2 1進行切削處理,焊墊1 1 a之鋁溶出之反 應速度變慢,而能夠大幅抑制焊墊1 1 a的腐蝕。依此,因 爲能夠使用混有必要濃度之二氧化碳達到要求之比電阻値 之切削水,能夠避免晶圓W之表面被切削屑污染,維持 ® 洗淨效果。又,沒有使用作爲切削水屬於高價而且使維修 繁雜化的切削液的必要,可以經濟暨簡單的實施。 還有,混合有二氧化碳的1 5度冷切削水係,可當切 削後之晶圓W之洗淨水利用。又可以作爲,當固定切削 終了的晶圓W的夾盤1 7往非加工領域移動時所通過之水 簾用水。 【圖式簡單說明】 [圖1 ]表不本發明的實施狀態下,爲了實施晶圓的切 -12- 200805476 Ο) 削方法的切削裝置的構成例的槪略立體圖。 [圖2]表示本實施型態所適用之晶圓的構成例之立體 圖。 [圖3]表示切削手段以及切削供水手段的構成例之立 體圖。 '[圖4]晶圓上之評價確認用之半導體晶片之選定場所 予以表示之說明圖。 • [圖5]焊墊附近予以放大表示之平面圖。 [圖6-1]焊墊之切削加工之表面狀態予以表示之相片 〇 [圖6-2]焊墊之切削加工之表面狀態予以表示之相片 〇 [圖7]表示評價確認結果之圖。 [圖8]圖7所表示之評價確認結果予以圖表化表示之 圖。 # [圖9]實驗結果中,切削水之溫度爲29°C、22。(:、I5 °C的狀態下焊墊之切削加工之表面狀態予以表示之電子顯 微鏡相片。 【主要元件符號說明】 17 :夾盤 20 :切削手段 2 1 :切削用刀片 22 :主軸殻 13- 200805476 (10)200805476 (1) Description of the Invention [Technical Field] The present invention relates to a method of cutting a wafer in which a wafer of a pad is formed on a surface and divided into semiconductor wafers. [Prior Art] A semiconductor wafer such as 1C, LSI or CCD is a semiconductor wafer formed by a plurality of dicing streets, and is divided into individual semiconductor wafers by a cutting device provided with a cutting insert. Here, in the cutting of the scribe line, the cutting blade is cut into the wafer while rotating at a high speed, and the cutting water is discharged to the contact portion in order to cool the contact portion between the wafer and the cutting insert. Further, the cutting water has a function of preventing the cutting chips generated by the cutting from adhering to the wafer and removing the deposited cutting chips and washing the surface of the wafer. When such pure water is used, it is larger than the electric resistance 而且 and it is easy to generate static electricity, and the method of activating carbon dioxide (co2) in pure water is used to prevent the chips from adhering to the semiconductor wafer. On the surface this is considered a lot. [Problem to be Solved by the Invention] However, the cutting water activated by the incorporation of carbon dioxide is highly acidic and erodes the pad formed on the surface of the semiconductor wafer. In particular, a pad mainly formed of aluminum; aluminum is eluted from the pad due to ionization, and 200805476 (2) corrosion (dissolution) occurs, which causes a problem of low quality of the semiconductor wafer. On the other hand, in order to suppress the corrosion of the parent metal or the pad and adjust the concentration of carbon dioxide to be low, the cleaning effect may become insufficient. Further, there is also an insulation for forming a compound on the surface of the pad. A method of suppressing corrosion of a solder pad by a film or a cutting fluid containing pure water (for example, see Patent Document 1), but it is expensive, and the maintenance method of the cutting fluid and the cleaning of the piping and the device are equivalent. It is complicated and not suitable for practical use. The present invention is directed to the above method for providing a relatively inexpensive and simple crystal which does not corrode an aluminum-containing pad and maintains the cleaning effect, and can divide the wafer into individual semiconductor wafers. The cutting method of the circle. Means for Solving the Problem In order to solve the above-described problems and achieve the object, a wafer cutting method according to the present invention is a cutting device including a chuck for fixing a wafer and a cutting holder. The cutting means of the cutting insert for the wafer on the chuck and the cutting water supply means for supplying the cutting water mixed with carbon dioxide to the wafer, the wafer in which the aluminum pad is formed on the surface is cut into One semiconductor wafer; characterized in that the wafer is cut by using the cutting blade described above while supplying cutting water having a temperature of not more than 15 degrees Celsius mixed with carbon dioxide to the wafer. 200805476 (3) Effects of the Invention According to the cutting method of the wafer relating to the present invention, although the cause of the uranium of the pad is not clear, one of the reasons for the chemical reaction is noted: the Celsius mixed with carbon dioxide is 1 5 A method in which the cold cutting water is supplied to the wafer and the cutting process is performed, and the elution reaction rate of the aluminum is slowed down, so that the uranium of the pad can be suppressed; accordingly, the cutting water mixed with the carbon dioxide having the necessary concentration can be used. The surface of the semiconductor wafer is not contaminated by the chips and the cleaning effect can be maintained. In the past, the high-priced and complicated maintenance fluids were not used, and the economical and simple implementation of the possible effects would be effective. [Embodiment] Hereinafter, a cutting method for a wafer of an optimum mode for carrying out the invention will be described with reference to the drawings. Fig. 1 is a schematic perspective view showing a configuration example of a cutting device for carrying out a wafer cutting method according to an embodiment of the present invention; and Fig. 2 is a perspective view showing a configuration example of a wafer to which the present embodiment is applied. FIG. 3 is a perspective view showing a configuration example of a cutting means and a cutting water supply means. The cutting device 1 is similar to the loading and unloading means 1 3, the conveying means 14, the cleaning means 15, and the conveying means 16, and includes a chuck 17 for fixing the wafer w integrated with the frame F, and a camera for positioning. 1 8 and a cutting means 20 for cutting the wafer W fixed by the chuck 17, and a cutting water supply means 30 for supplying cutting water to the wafer W. First, the wafer W is adhered by the adhesive tape 200805476 (4) tape T attached to the annular frame F, and is accommodated in the cassette 12 by the adhesive tape to be supported by the frame F. As shown in FIG. 2, the wafer W is divided into a plurality of fields by a plurality of dicing streets S in which a surface Wa is formed in a lattice shape, and a semiconductor wafer 11 such as an IC or an LSI is formed in the divided region. As shown in Fig. 1, the wafer W thus constituted is attached to the adhesive tape T of the annular frame F, and the surface Wa is placed on the upper side with the back surface. The loading/unloading means 1 3 is used to carry out the wafer W stored in the cassette portion 1 2 to the mounting area where the transport means 1 4 can be transported, and also carry the wafer W after the cutting process into the cassette portion. 1 2. The transport means 1 4 transports the wafer W carried out to the mounting area by the carry-in/out means 13 to the chuck 17. Further, the cleaning means 15 is used to clean the crystal W processed by the cutting means 20. The transport means 16 transports the wafer W processed by the cutting means 20 from the chuck 17 to the cleaning means 15. Further, the chuck 17 is connected to a drive source (not shown) so as to be rotatable. Further, the chuck 7 system is configured to be movable in the X-axis direction by a conveying mechanism such as a ball screw, a nut, or a pulse motor #. The camera 18 is photographed and held on the surface of the wafer W held by the chuck 17; an alignment portion (not shown) detects the portion that must be cut based on the image obtained by the camera 18, and supplies it to the cutting. The positioning position of the cutting action of the means 20. In the cutting means 20, the wafer w held by the chuck 17 is cut by the cutting blade 21, and is provided by a cutting conveyance mechanism (not shown) such as a ball screw, a nut, or a pulse motor. The movement can be moved up and down in the Z-axis direction; and the indexing conveyance mechanism (not shown) such as a ball screw, a nut, or a pulse motor can be moved in the y-axis direction. Cutting Knife -8- 200805476 (5) The film 2 1 series, as shown in Fig. 3, is supported in the spindle housing 22 so as to be rotatable and covered by the blade cover 23. The cutting water supply means 30 is provided with 15° (the following cutting water is supplied to the wafer|gas) as a charging inhibitor carbon dioxide (C〇2), and a pure water source 3 1 in which pure water is stored is provided. The constant temperature water supply device 3 2 and the carbon dioxide supply device 33. The pure water supplied from the pure water source 31 is fixed by the constant temperature water supply device 32, and the present embodiment is 1 5 °. The constant temperature below c is maintained, for example, at 15 ° C. The carbon dioxide supply device 33 is a water in a constant temperature state supplied from the constant temperature water supply device 32, and a pure amount of carbon dioxide is supplied by the pump to supply pure water. The cutting water supply means 30 is provided so that the blade outer cover 23 is disposed on both sides of the cutting blade 21 and is supplied to the contact portion between the wafer W and the cutting blade 21. a cutting water supply nozzle 3 5 for cutting water for cooling at 15 ° C with carbon dioxide; a wafer disposed on the periphery of the blade cover 23 and the cutting water supply nozzle 35; 1 5 °C cleaning nozzle for cutting water 3 6 ; The cutting water supplied to the blade outer cover 23 and the cutting water supply spray 35 and the injection nozzle 36 flows into the cutting water inflow portion 37 of the tubular structure by the carbon dioxide supply device. Further, the amount of cutting water is contained therein. The flow rate controller (not shown) of the cutting device 10 is integrated. The cutting method of the wafer W using the cutting device 10 is sucked and held by the wafer w held by the chuck 17, and the chuck 17 is moved at X. The axial direction is positioned directly below the camera 18, and the pattern is matched to the full state for pure oxygen to be used in the oxygen and W nozzle 33 flow regulation -9-200805476 (6) to detect the cutting field and perform The cutting field is indexed with the position of the cutting blade 21 in the Y-axis direction. After the indexing, the chuck 17 is further moved in the X-axis direction, and the cutting blade 21 in the high-speed rotation is cut into a certain amount in the z-axis direction. When it is sent, the wafer W is cut along the desired scribe line S. When such a cutting process is performed, it is conventionally supplied to the wafer W by cutting water of 15 ° C to 30 ° C. Cooling and washing (Ref. Patent Document 1) In the present embodiment, the cutting water supply nozzle 35 and the injection nozzle 36 are supplied with the cutting water of 15 ° C or less in which carbon dioxide is mixed, and are used for cutting. The blade 21 cuts the wafer W and divides it into a state of one semiconductor wafer 11. That is, the reason for the corrosion of the solder pad is not clear, and it is one of the reasons for the chemical reaction as one of the reasons: In the method of cutting the cold cutting water of 15 ° C or less with carbon dioxide on the wafer, the dissolution rate of the aluminum is slowed down, and the corrosion of the pad can be suppressed. The effect of the cutting method of the wafer is verified based on the experimental results. First, explain the experimental conditions. The experimental conditions for wafer cutting are: Wafer W: 200 mm in diameter, thickness 〇.3 mm, wafer cutting blade 21: electroforming blade cutting blade 21 having a thickness of 0.04 mm: number of revolutions: 3000 rpm chuck 17 Conveying speed: 30mm/s Cutting amount: from top to bottom 5 0 /zm -10- 200805476 (7) Cutting method: two-sided cutting method Cutting index: 1.5mm 1 wafer W cutting time: 30 minutes Cutting water: pure Under the condition of water + carbon dioxide mixed water (specific resistance 値〇 5 Μ Ω • cm ) ', the temperature of the cutting water is 5 art, 10° 0, 15 it, 18 art, 22 ° C, 25 ° C, Each of the 28 ° C 'cutting experiments was performed in one piece. • For the results of such experiments, the following evaluations were made. First, with respect to the wafer W to be cut, each of the semiconductor wafers 11 having five fixed positions indicated by pi to P5 in FIG. 4 is selected for evaluation confirmation, and the selected semiconductor wafer 11 is one side as shown in FIG. All of the pads 1 1 a were observed by an electron microscope to count the elution holes which occurred in the dissolution. The pad 1 1 a is mainly formed of aluminum. Photographs taken under an electron microscope of the pad 1 1 a are shown in Figures 6-1 and 6-2. Figure 6-1 shows, for example, the position P] the surface state of the surface of the pad 1 1 a where the cutting process is shown. φ , where corrosion occurs, because most of them are small, they are not counted by the dissolution holes. On the other hand, Fig. 6-2 is a photograph showing, for example, the surface state of the cutting process of the pad 1 la in the position Pi, as shown by a circle in the photograph, indicating that the dissolution hole of 3//m or more exists. The evaluation result of such an evaluation for the object to be counted is shown in Fig. 7 . The calculation area of the dissolution hole is as shown in Fig. 5, 3 · 9 mm X 0 · 0 8 X 5 pieces = 1 · 5 6 mm 2, which is used here to indicate that the pad 11a has a unit area of 1 mm 2 The number of dissolved holes is converted. Fig. 8 is a graph showing the results of the evaluation shown in Fig. 7. 11 - 200805476 (8) A diagram showing the graph. According to the evaluation results, it is determined that the temperature of the cutting water is bounded by 15 °C, and the number of dissolution holes varies greatly; the chemical reaction is promoted at a higher temperature than 15 °C, and the number of relatively dissolved holes is relatively The chemical reaction is suppressed under the condition of '1 5 °C or less, and the number is almost 〇. Further, Fig. 9 shows an electron microscope photograph showing the surface state of the cutting process of the pad 1 1 a in the state where the temperature of the cutting water is 29 ° C, 22 ° C, and 15 ° C in the experimental results. In Fig. 9, it was found that the relatively dark portion indicates the φ elution hole, and the state where the cutting water temperature is 15 °C is extremely small even if the elution hole is present, and there is no problem in practical use. According to the cutting method of the wafer W of the present embodiment, it is found that the cutting blade 21 is simultaneously subjected to cutting processing by supplying the 15° cold cut water mixed with carbon dioxide to the wafer W, and the pad 1 1 a The reaction rate of aluminum dissolution is slow, and the corrosion of the pad 1 1 a can be greatly suppressed. Accordingly, since the cutting water having the required specific resistance of carbon dioxide can be used, the surface of the wafer W can be prevented from being contaminated by chips and the cleaning effect can be maintained. Further, it is not necessary to use a cutting fluid which is expensive and the maintenance is complicated, and it can be economically and simply implemented. Further, a 15 degree cold cutting water system in which carbon dioxide is mixed can be used as the washing water of the wafer W after cutting. Further, it can be used as a water curtain through which the chuck 7 of the wafer W which has been cut and finished is moved to the non-machining area. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] is a schematic perspective view showing a configuration example of a cutting device for performing a wafer cutting method in the embodiment of the present invention. Fig. 2 is a perspective view showing a configuration example of a wafer to which the present embodiment is applied. Fig. 3 is a perspective view showing a configuration example of a cutting means and a cutting water supply means. '[Fig. 4] An explanatory view showing a selected place of the semiconductor wafer for evaluation and confirmation on the wafer. • [Fig. 5] A plan view showing the vicinity of the pad in an enlarged manner. [Fig. 6-1] Photograph showing the surface state of the cutting process of the pad 〇 [Fig. 6-2] Photograph showing the surface state of the pad cutting process 〇 [Fig. 7] A view showing the result of evaluation. Fig. 8 is a diagram showing the results of the evaluation confirmation shown in Fig. 7 in a graphical representation. # [Fig. 9] In the experimental results, the temperature of the cutting water was 29 ° C and 22. (:, an electron microscope photograph showing the surface state of the cutting of the pad under the state of I5 °C. [Explanation of main component symbols] 17 : Chuck 20 : Cutting means 2 1 : Cutting blade 22 : Spindle shell 13 - 200805476 (10)

23 : 3 0 : 3 1: 32 : 33 : 3 5 : 36 : F : T : W : 刀片外罩 切削水供給手段 純水源 定溫水供給裝置 二氧化碳供給裝置 切削水供給噴嘴 噴射噴嘴 切削水流入部 框架 黏貼膠帶 晶圓23 : 3 0 : 3 1: 32 : 33 : 3 5 : 36 : F : T : W : Blade cover cutting water supply means pure water source constant temperature water supply device carbon dioxide supply device cutting water supply nozzle injection nozzle cutting water inflow frame Adhesive tape wafer

-14--14-

Claims (1)

200805476 (1) 十、申請專利範圍 1 · 一種晶·圓之切削方法,係使用切削裝置, 裝置具備有:將晶圓固定之夾盤、和具備有切削保 夾盤上的晶圓之切削用刀片的切削手段、和供給混 U 氧化碳之切削水於晶圓的切削水供給手段,將把混 焊墊形成在表面的晶圓切削成一個一個半導體晶片 徵爲: Φ 一邊供給已混合有二氧化碳之攝氏1 5度以下 水給晶圓,一邊用前述的切削用刀片來切削晶圓。 該切削 持在該 合有二 有錫之 :其特 的切割 -15-200805476 (1) X. Patent application scope 1 · A cutting method for a crystal and a circle, which uses a cutting device, the device includes a chuck for fixing a wafer, and a cutting for a wafer having a cutting chuck The cutting means of the blade and the cutting water supply means for supplying the cutting water mixed with U carbon oxide to the wafer, and cutting the wafer formed on the surface by the welding pad into one semiconductor wafer are as follows: Φ while the carbon dioxide has been mixed The wafer is cut at a temperature of 1 to 5 degrees Celsius, and the wafer is cut by the cutting blade described above. The cutting is held in the combination of two tins: its special cutting -15-
TW96120367A 2006-06-07 2007-06-06 Method for cutting wafer TW200805476A (en)

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TWI715522B (en) * 2014-02-04 2021-01-11 日商迪思科股份有限公司 Blade cover device

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JP2012016779A (en) * 2010-07-08 2012-01-26 Disco Corp Machining method of lithium tantalate
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
CN108527692A (en) * 2018-03-29 2018-09-14 海宁市瑞宏科技有限公司 A kind of novel cutting-up technology of saw filter chip

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TWI715522B (en) * 2014-02-04 2021-01-11 日商迪思科股份有限公司 Blade cover device
TWI641037B (en) * 2014-07-18 2018-11-11 東和股份有限公司 Cutting device and cutting method

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