TW202008452A - Manufacturing method of chips capable of inhibiting increase of manufacturing cost and preventing quality deterioration of chips - Google Patents

Manufacturing method of chips capable of inhibiting increase of manufacturing cost and preventing quality deterioration of chips Download PDF

Info

Publication number
TW202008452A
TW202008452A TW108126555A TW108126555A TW202008452A TW 202008452 A TW202008452 A TW 202008452A TW 108126555 A TW108126555 A TW 108126555A TW 108126555 A TW108126555 A TW 108126555A TW 202008452 A TW202008452 A TW 202008452A
Authority
TW
Taiwan
Prior art keywords
wafer
processing groove
chips
manufacturing
protective film
Prior art date
Application number
TW108126555A
Other languages
Chinese (zh)
Other versions
TWI800668B (en
Inventor
源田悟史
小川雄輝
小田中健太郎
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202008452A publication Critical patent/TW202008452A/en
Application granted granted Critical
Publication of TWI800668B publication Critical patent/TWI800668B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a manufacturing method of chips, which may lower the manufacturing cost for chips and prevent the quality deterioration of chips. The manufacturing method of chips of the present invention may dice a wafer and fabricate chips. The wafer contains silicon (Si) and is provided on its front surface with: devices formed on the area divided by a plurality of predetermined scribing lines; and, a metal layer containing copper (Cu) and formed on the predetermined scribing lines. The manufacturing method of chips includes: a protective film forming step for forming a protective film on the front surface of a wafer; a laser processing groove forming step for irradiating laser beam with absorptive wavelength for wafer from the front surface of the wafer along the predetermined scribing lines after finishing the protective film forming step to form the processing grooves on the wafer while removing the metal layer at the same time; an enlargement promoting step for promoting the enlargement of chips after finishing the laser processing groove forming step, wherein the chips are generated and attached on the interior of the processing grooves while forming the processing grooves; and, a dicing step for dicing the wafer along the processing grooves after finishing the enlargement promoting step.

Description

晶片製造方法Wafer manufacturing method

本發明是關於一種晶片製造方法，分割晶圓來製造晶片。The invention relates to a wafer manufacturing method, which divides a wafer to manufacture a wafer.

在半導體元件晶片的製造步驟中，使用半導體晶圓，該半導體晶圓在藉由分割預定線（切割道）所劃分的區域分別形成有IC（Integrated Circuit）、LSI（Large Scale Integration）等的元件。藉由沿著分割預定線分割此半導體晶圓，得到分別具備元件的多個半導體元件晶片。同樣地，藉由分割光元件晶圓來製造光元件晶片，該光元件晶圓形成有LED（Light Emitting Diode）等的光元件。In the manufacturing process of the semiconductor element wafer, a semiconductor wafer is used, and the semiconductor wafer is formed with elements such as IC (Integrated Circuit), LSI (Large Scale Integration), etc., in the areas divided by the planned dividing lines (dicing lines). . By dividing this semiconductor wafer along the line to be divided, a plurality of semiconductor element chips each having an element are obtained. Similarly, an optical element wafer is manufactured by dividing an optical element wafer, and an optical element such as an LED (Light Emitting Diode) is formed on the optical element wafer.

代表上述半導體晶圓或光元件晶圓等之晶圓的分割，例如是使用切割裝置，該切割裝置具備：卡盤台，保持晶圓；及主軸，裝設有切割晶圓之圓環狀的切割刀片。藉由卡盤台保持晶圓，並藉由使切割刀片旋轉且切入晶圓而切斷晶圓。Representing the division of the above-mentioned semiconductor wafers or optical element wafers, for example, using a dicing device, the dicing device includes: a chuck table to hold the wafer; and a spindle, a circular ring mounted with a dicing wafer Cutting blade. The wafer is held by the chuck table, and the wafer is cut by rotating the dicing blade and cutting into the wafer.

在晶圓的分割預定線上會有，形成有金屬層之一部分的情況，該金屬層構成元件的配線或電極等。若使切割刀片切入此晶圓，則在分割預定線上形成的金屬層與旋轉的切割刀片接觸而被拉伸，產生鬚狀毛邊。此毛邊會成為，經由晶圓分割而得之晶片的配線或電極短路、結合不良等的原因。There may be a case where a part of a metal layer is formed on the planned dividing line of the wafer, and this metal layer constitutes the wiring or electrode of the device. When the dicing blade is cut into this wafer, the metal layer formed on the line to be divided comes into contact with the rotating dicing blade and is stretched to produce whisker-like burrs. This burr may cause a short circuit or poor connection of the wiring or electrodes of the wafer obtained by dividing the wafer.

因此，下述手法被提案：在藉由切割刀片切割晶圓前，藉由沿著分割預定線照射雷射光束而在晶圓上形成加工槽（例如專利文獻1）。根據此手法，因為藉由雷射光束的照射來去除在分割預定線上形成的金屬層，所以在之後藉由切割刀片切割晶圓時，會抑制毛邊的產生。Therefore, the following technique is proposed: Before dicing the wafer with a dicing blade, a processing groove is formed on the wafer by irradiating a laser beam along a line to be divided (for example, Patent Document 1). According to this method, since the metal layer formed on the line to be divided is removed by the irradiation of the laser beam, the generation of burrs is suppressed when the wafer is cut by the dicing blade later.

但是，若藉由雷射光束的照射來去除金屬層，則會有產生含有金屬的碎片且碎片附著在加工槽內部的情況。然後，在此碎片含有銅（Cu），晶圓含有矽（Si）的情況下，證實會有與晶圓接觸的碎片隨著時間的經過而成長、增大化的情況。然後，若增大化的碎片與含有晶片的金屬層接觸，會有引起晶片的配線或電極短路的情況。因此，希望能去除碎片。However, if the metal layer is removed by the irradiation of the laser beam, fragments containing metal may be generated and the fragments may adhere to the inside of the processing tank. Then, in the case where the fragments contain copper (Cu) and the wafer contains silicon (Si), it is confirmed that the fragments in contact with the wafer will grow and increase with time. Then, if the enlarged fragments come into contact with the metal layer containing the wafer, the wiring or electrodes of the wafer may be short-circuited. Therefore, it is desirable to remove debris.

例如，在專利文獻2中，公開了以下手法：藉由乾式蝕刻去除經由雷射光束的照射而產生的碎片。藉由以此方式去除碎片，能防止因配線或電極短路造成之晶片的品質下降。For example, Patent Document 2 discloses the following method: dry-etching removes debris generated by irradiation of a laser beam. By removing the debris in this way, it is possible to prevent the deterioration of the chip due to wiring or electrode short circuit.

[習知技術文獻] [專利文獻] [專利文獻1]日本特開2006－190779號公報 [專利文獻2]日本特開2017－92363號公報[Conventional Technical Literature] [Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 2006-190779 [Patent Document 2] Japanese Patent Application Publication No. 2017-92363

[發明所欲解決的課題] 如上述，因為經由雷射光束照射而在晶圓產生的碎片是成為晶片品質下降的原因，去除碎片較佳。但是，在藉由乾式蝕刻去除碎片的情況下，則變得需要用於實施乾式蝕刻的裝置，招致晶片製造成本的增加。[Problems to be solved by the invention] As described above, since the debris generated on the wafer by laser beam irradiation is the cause of the deterioration of the wafer quality, it is preferable to remove the debris. However, when debris is removed by dry etching, an apparatus for performing dry etching becomes necessary, which increases the wafer manufacturing cost.

本發明是鑑於此問題而完成的發明，目的在於提供一種晶片製造方法，能夠抑制晶片製造成本的增加，同時能防止晶片的品質下降。The present invention has been made in view of this problem, and an object of the present invention is to provide a wafer manufacturing method capable of suppressing an increase in wafer manufacturing cost and preventing a decrease in wafer quality.

[解決課題的技術手段] 根據本發明的一態樣，提供一種晶片製造方法，分割晶圓並製造晶片，該晶圓含有矽（Si）並在其正面側具備：元件，形成於藉由多條分割預定線所劃分的區域；以及金屬層，含有銅（Cu）並形成於該分割預定線上；該晶片製造方法含有：保護膜形成步驟，在該晶圓的正面側形成保護膜；雷射加工槽形成步驟，在該保護膜形成步驟實施後，從該晶圓的正面側沿著該分割預定線照射對該晶圓具有吸收性之波長的雷射光束，一邊去除該金屬層一邊在該晶圓上形成加工槽；增大化促進步驟，在該雷射加工槽形成步驟實施後，促進碎片的增大化，該碎片藉由該加工槽的形成而產生且附著在加工槽的內部；分割步驟，在該增大化促進步驟實施後，沿著該加工槽分割該晶圓。[Technical means to solve the problem] According to an aspect of the present invention, there is provided a wafer manufacturing method, which divides a wafer and manufactures a wafer, the wafer containing silicon (Si) and having on its front side: an element formed on a line divided by a plurality of predetermined dividing lines Region; and a metal layer containing copper (Cu) and formed on the dividing line; the wafer manufacturing method includes: a protective film forming step, forming a protective film on the front side of the wafer; a laser processing groove forming step, in the After the protective film forming step is carried out, a laser beam of a wavelength having an absorptivity to the wafer is irradiated from the front side of the wafer along the planned dividing line, and a processing groove is formed on the wafer while removing the metal layer; Enlargement promotion step, after the implementation of the laser processing groove formation step, promotes the enlargement of debris, the debris is generated by the formation of the processing groove and adheres to the inside of the processing groove; the dividing step, in the increase After the chemical promotion step is performed, the wafer is divided along the processing groove.

再者，該晶片製造方法更含有去除步驟，在該增大化促進步驟實施後，去除該保護膜。此外，該切割步驟可以是使寬度比該加工槽的寬度還小的切割刀片沿著該加工槽切入該晶圓並分割晶圓。Furthermore, the wafer manufacturing method further includes a removal step, and after the enlargement promotion step is performed, the protective film is removed. In addition, the cutting step may be such that a cutting blade with a width smaller than the width of the processing groove cuts the wafer along the processing groove and divides the wafer.

此外，該增大化促進步驟可以將該晶圓配置在溫度50℃以上200℃以下的環境下，藉此促進該碎片的增大化。此外，該增大化促進步驟也可以將該晶圓配置在濕度75%以上的環境下，藉此促進該碎片的增大化。In addition, the enlargement promotion step can arrange the wafer in an environment with a temperature of 50° C. or higher and 200° C. or lower, thereby promoting the enlargement of the debris. In addition, the increasing step may also arrange the wafer in an environment with a humidity of 75% or more, thereby promoting the increase of the debris.

[發明效果] 在關於本發明之一態樣的晶片製造方法中，藉由雷射光束的照射而在晶圓形成加工槽後，進行使於加工槽內部附著之碎片增大化的處理。若使碎片增大化，則在實施之後的步驟（藉由切割刀片切割晶圓等）時，會變得容易同時去除碎片。因此，不用實施大規模的步驟便能容易地去除碎片，能夠抑制晶片製造成本增加，同時能防止晶片的品質下降。[Effect of the invention] In the wafer manufacturing method according to one aspect of the present invention, after the processing groove is formed on the wafer by the irradiation of the laser beam, a process of increasing debris adhering to the inside of the processing groove is performed. If the debris is increased, it becomes easier to remove the debris at the same time when performing the subsequent steps (cutting the wafer with a dicing blade, etc.). Therefore, debris can be easily removed without implementing large-scale steps, which can suppress the increase in wafer manufacturing cost and prevent the deterioration of wafer quality.

以下，參照隨附圖式說明本發明的實施方式。首先，說明可以使用本發明實施方式相關之晶片製造方法的晶圓構成例。圖1為表示晶圓11的立體圖。晶圓11形成為圓盤狀，具備正面11a及背面11b。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. First, an example of a wafer configuration that can use the wafer manufacturing method according to the embodiment of the present invention will be described. FIG. 1 is a perspective view showing the wafer 11. The wafer 11 is formed in a disk shape, and includes a front surface 11 a and a back surface 11 b.

晶圓11是藉由以互相交叉的方式排列成格子狀的多條分割預定線（切割道）13來劃分成多個區域。該些區域的正面11a側上分別形成有以IC（Integrated Circuit）、LSI（Large Scale Integration）等所構成的元件15。The wafer 11 is divided into a plurality of areas by a plurality of planned dividing lines (dicing lines) 13 arranged in a grid so as to cross each other. On the front surface 11a side of these regions, elements 15 composed of IC (Integrated Circuit), LSI (Large Scale Integration), etc. are formed, respectively.

晶圓11是藉由含有矽的材料而形成。例如，晶圓11可以藉由矽（Si）、碳化矽（SiC）、矽鍺（SiGe）等的材料而形成。再者，晶圓11的形狀、大小並無限制。此外，元件15的種類、數量、形狀、構造、大小、配置等亦無限制。The wafer 11 is formed of a material containing silicon. For example, the wafer 11 may be formed of materials such as silicon (Si), silicon carbide (SiC), and silicon germanium (SiGe). Furthermore, the shape and size of the wafer 11 are not limited. In addition, the type, number, shape, structure, size, configuration, etc. of the element 15 are also not limited.

圖2為表示晶圓11的剖面圖。如圖2所示，在晶圓11的正面11a側上形成有層積體17，該層積體17具備構成元件15的金屬層或絕緣層等。此外，在鄰接的元件15之間，以覆蓋分割預定線13的方式形成含有銅（Cu）的金屬層19。FIG. 2 is a cross-sectional view showing the wafer 11. As shown in FIG. 2, a laminate 17 is formed on the front surface 11 a side of the wafer 11, and the laminate 17 includes a metal layer or an insulating layer that constitutes the element 15. In addition, between adjacent elements 15, a metal layer 19 containing copper (Cu) is formed so as to cover the line 13 to be divided.

金屬層19是，例如相當於構成元件15的配線層或電極等。換言之，圖2中為了方便說明，雖然分別將層積體17與金屬層19個別表示，但金屬層19是構成層積體17的一部分層，此金屬層19的一部分也可以形成至分割預定線13上。即，能以層積體17與金屬層19連結的狀態而形成為一體。The metal layer 19 is, for example, a wiring layer or an electrode that constitutes the element 15. In other words, in FIG. 2, for convenience of description, although the laminate 17 and the metal layer 19 are separately shown, the metal layer 19 is a part of the layer constituting the laminate 17, and a part of the metal layer 19 may also be formed up to the planned dividing line 13 on. In other words, the laminate 17 and the metal layer 19 can be integrated into one body.

但是，金屬層19的態樣並不限定於此。例如金屬層19可以是用於評估元件15之動作的構成TEG（Test Element Group）的金屬層等。However, the aspect of the metal layer 19 is not limited to this. For example, the metal layer 19 may be a metal layer constituting a TEG (Test Element Group) for evaluating the operation of the element 15.

上述的晶圓11藉由以環狀框架支撐而構成框架單元。圖3為表示框架單元25的立體圖。如圖3所示，晶圓11的背面11b側是黏貼在圓形膠膜21的中央部，該圓形膠膜21是以樹脂等的材料形成且直徑比晶圓11還大。此外，膠膜21的外周部黏貼在中央部具有圓形開口23a的環狀框架23上。藉此，構成具備晶圓11的框架單元25，該晶圓11透過膠膜21而被環狀框架23所支撐。The wafer 11 described above constitutes a frame unit by being supported by a ring frame. FIG. 3 is a perspective view showing the frame unit 25. As shown in FIG. 3, the back surface 11 b side of the wafer 11 is adhered to the central portion of the circular adhesive film 21, which is formed of a material such as resin and has a larger diameter than the wafer 11. In addition, the outer peripheral portion of the adhesive film 21 is adhered to the ring-shaped frame 23 having a circular opening 23a in the central portion. Thereby, the frame unit 25 including the wafer 11 is constructed, and the wafer 11 is supported by the ring-shaped frame 23 through the adhesive film 21.

藉由沿著分割預定線13分割晶圓11，得到分別含有元件15的多個晶片。晶圓11的分割是，例如藉由圓環狀的切割刀片沿著分割預定線13切割晶圓11而實施。但是，如圖2所示，因為在分割預定線13上形成有金屬層19，若使切割刀片沿著分割預定線13切入，則會有在金屬層19含有的金屬與切割刀片接觸而被拉伸，產生鬚狀毛邊的情況。By dividing the wafer 11 along the planned dividing line 13, a plurality of wafers each containing the element 15 are obtained. The division of the wafer 11 is performed by, for example, cutting the wafer 11 along a line to be divided 13 with a circular cutting blade. However, as shown in FIG. 2, since the metal layer 19 is formed on the line to be divided 13, if the cutting blade is cut along the line to be divided 13, metal contained in the metal layer 19 may be pulled by contact with the cutting blade Stretching, resulting in a beard-like burr.

因此在本實施方式中，在藉由切割刀片切割晶圓11前，沿著分割預定線13照射雷射光束而去除金屬層19。藉此，能避免在分割晶圓11時之切割刀片與金屬層19的接觸，並能防止產生毛邊。以下，說明關於本實施方式相關之晶片製造方法的具體例。Therefore, in this embodiment, before the wafer 11 is cut by the dicing blade, the laser beam is irradiated along the line to be divided 13 to remove the metal layer 19. Thereby, the contact between the dicing blade and the metal layer 19 when dividing the wafer 11 can be avoided, and the generation of burrs can be prevented. Hereinafter, a specific example of the wafer manufacturing method according to this embodiment will be described.

首先，在晶圓11的正面11a側形成保護元件15的保護膜（保護膜形成步驟）。圖4為表示形成有保護膜27之晶圓11的剖面圖。保護膜27是以覆蓋晶圓11正面11a側的方式形成。再者，保護膜27較佳為藉由PVA（聚乙烯醇）、PEG（聚乙二醇）等的水溶性樹脂而形成。藉由將水溶性樹脂用於保護膜27，在之後的步驟中會變得容易去除保護膜27。First, the protective film of the protective element 15 is formed on the front surface 11a side of the wafer 11 (protective film forming step). 4 is a cross-sectional view showing the wafer 11 on which the protective film 27 is formed. The protective film 27 is formed so as to cover the front surface 11a side of the wafer 11. Furthermore, the protective film 27 is preferably formed of a water-soluble resin such as PVA (polyvinyl alcohol) or PEG (polyethylene glycol). By using a water-soluble resin for the protective film 27, it becomes easy to remove the protective film 27 in the subsequent steps.

之後，藉由沿著晶圓11的分割預定線13照射雷射光束，一邊去除金屬層19一邊在晶圓11上形成加工槽（雷射加工槽形成步驟）。照向晶圓11之雷射光束的照射是使用雷射加工裝置來實施。After that, by irradiating a laser beam along the line to be divided 13 of the wafer 11, a processing groove is formed on the wafer 11 while removing the metal layer 19 (laser processing groove forming step). The irradiation of the laser beam to the wafer 11 is performed using a laser processing apparatus.

圖5為表示雷射加工裝置2的立體圖。雷射加工裝置2具備：卡盤台4，保持晶圓11；以及雷射加工單元6，照射雷射光束至藉由卡盤台4保持的晶圓11。FIG. 5 is a perspective view showing the laser processing device 2. The laser processing apparatus 2 includes a chuck table 4 that holds the wafer 11 and a laser processing unit 6 that irradiates the laser beam to the wafer 11 held by the chuck table 4.

卡盤台4是透過膠膜21吸引保持晶圓11。具體而言，卡盤台4的上表面構成有保持晶圓11的保持面，此保持面透過於卡盤台4內部形成之吸引通路（未圖示）而與吸引源連接。The chuck table 4 sucks and holds the wafer 11 through the adhesive film 21. Specifically, the upper surface of the chuck table 4 constitutes a holding surface that holds the wafer 11, and this holding surface is connected to the suction source through a suction path (not shown) formed inside the chuck table 4.

在卡盤台4的周圍設置有夾持並固定環狀框架23的多個夾具（未圖示）。此外，卡盤台4與設置在卡盤台4之下部側的移動機構（未圖示）及旋轉機構（未圖示）連接。卡盤台4是藉由移動機構在X軸方向（加工進給方向）及Y軸方向（分度進給方向）上移動，藉由旋轉機構繞著與Z軸方向（垂直方向）呈大致平行的旋轉軸旋轉。A plurality of clamps (not shown) that sandwich and fix the ring frame 23 are provided around the chuck table 4. In addition, the chuck table 4 is connected to a moving mechanism (not shown) and a rotation mechanism (not shown) provided on the lower side of the chuck table 4. The chuck table 4 is moved in the X axis direction (machining feed direction) and the Y axis direction (indexing feed direction) by the moving mechanism, and is approximately parallel to the Z axis direction (vertical direction) by the rotating mechanism The axis of rotation rotates.

晶圓11是將正面11a側露出於上方的方式，透過膠膜21而被卡盤台4的保持面所支撐。此外，環狀框架23藉由在卡盤台4周圍備有的夾具而被固定。此狀態下，若使吸引源的負壓作用於卡盤台4的保持面，晶圓11藉由卡盤台4而被吸引保持。The wafer 11 is supported by the holding surface of the chuck table 4 through the adhesive film 21 so that the front surface 11a side is exposed upward. In addition, the ring frame 23 is fixed by a clamp provided around the chuck table 4. In this state, when the negative pressure of the suction source is applied to the holding surface of the chuck table 4, the wafer 11 is sucked and held by the chuck table 4.

在卡盤台4的上方配置有雷射加工單元6。雷射加工單元6是以使至少一部分波長被晶圓11吸收的雷射光束（對晶圓11具有吸收性之波長的雷射光）聚光至預定位置的方式而構成。例如雷射加工單元6是具備YAG雷射（釔鋁石榴石雷射）、YVO4 雷射（釩酸釔雷射）等的脈衝雷射光束震盪器（未圖示），以及聚光器（未圖示），將從脈衝雷射光束震盪器處發散出的脈衝雷射光束聚光。A laser processing unit 6 is arranged above the chuck table 4. The laser processing unit 6 is configured to condense the laser beam (wavelength laser light having a wavelength that absorbs the wafer 11) absorbed by the wafer 11 to a predetermined position at least a part of the wavelength. For example, the laser processing unit 6 is a pulsed laser beam oscillator (not shown) equipped with a YAG laser (yttrium aluminum garnet laser), a YVO 4 laser (yttrium vanadate laser), and a condenser ( (Not shown), the pulsed laser beam diverging from the pulsed laser beam oscillator is focused.

此外，在雷射加工單元6的側方配置有攝像單元8，該攝像單元8用於拍攝被卡盤台4所保持的晶圓11等。根據此攝像單元8取得的影像來控制卡盤台4及雷射加工單元6的位置，並調整雷射光束對晶圓11的照射位置。In addition, an imaging unit 8 is arranged on the side of the laser processing unit 6, and the imaging unit 8 is used to image the wafer 11 held by the chuck table 4 and the like. The positions of the chuck table 4 and the laser processing unit 6 are controlled based on the images acquired by the imaging unit 8, and the irradiation position of the laser beam on the wafer 11 is adjusted.

在雷射光束照射晶圓11時，使卡盤台4往雷射加工單元6的下方移動，一邊對晶圓11照射來自雷射加工單元6之具有吸收性波長的雷射光束，一邊使卡盤台4在加工進給方向上（X軸方向）移動。藉此，雷射光束沿著分割預定線13照射，於晶圓11上形成直線狀的加工槽。When the laser beam irradiates the wafer 11, the chuck table 4 is moved below the laser processing unit 6, and the wafer 11 is irradiated with the laser beam of the absorption wavelength from the laser processing unit 6 while the wafer 11 is irradiated. The table 4 moves in the machining feed direction (X-axis direction). With this, the laser beam is irradiated along the line to be divided 13 to form a linear processing groove on the wafer 11.

圖6（A）為表示形成有加工槽11c之晶圓11的剖面圖。若雷射光束照射晶圓11，則在晶圓1的正面11a側實施燒蝕加工。其結果，如圖6（A）所示，形成由側壁11d、11e及底部11f所構成，且其深度超過金屬層19的厚度之加工槽11c，並去除形成於分割預定線13的金屬層19。再者，如圖6（A）所示，金屬層19的一部分也可以殘留在加工槽11c的兩端。FIG. 6(A) is a cross-sectional view showing the wafer 11 in which the processing groove 11c is formed. When the laser beam irradiates the wafer 11, ablation processing is performed on the front surface 11a side of the wafer 1. As a result, as shown in FIG. 6(A), a processing groove 11c composed of the side walls 11d, 11e and the bottom 11f and having a depth exceeding the thickness of the metal layer 19 is formed, and the metal layer 19 formed on the planned dividing line 13 is removed . Furthermore, as shown in FIG. 6(A), a part of the metal layer 19 may remain at both ends of the processing groove 11c.

若對含有銅（Cu）的金屬層實施燒蝕加工，則會有在加工槽11c的側壁11d、11e及底部11f附著含有銅（Cu）之碎片29的情況。然後，若在加工槽11c的內部殘留有碎片29的狀態下經過一段時間，則碎片29會成長且會增大化。此增大化被認為是碎片29所含有的銅（Cu）與晶圓11所含有的矽（Si）及空氣中的水分反應而產生。When the metal layer containing copper (Cu) is ablated, fragments 29 containing copper (Cu) may adhere to the side walls 11d, 11e and bottom 11f of the processing groove 11c. Then, after a period of time while the fragments 29 remain inside the processing groove 11c, the fragments 29 grow and increase. This increase is considered to be caused by the reaction between the copper (Cu) contained in the chip 29 and the silicon (Si) contained in the wafer 11 and moisture in the air.

具體而言，藉由雷射光束的照射而產生的碎片29若在加工槽11c的內部與側壁11d、11e或底部11f接觸，則碎片29所含有的銅（Cu）會與晶圓11所含有的矽（Si）反應，形成作為碎片29成長之核的矽化三銅（Cu3 Si）。然後，若此矽化三銅（Cu3 Si）與空氣中所含有的水分反應，則在矽化三銅（Cu3 Si）的表面會形成含有氧化亞銅（Cu2 O）及銅（Cu）的層。Specifically, if the fragments 29 generated by the irradiation of the laser beam come into contact with the side walls 11d, 11e or the bottom 11f inside the processing tank 11c, the copper (Cu) contained in the fragments 29 will be contained in the wafer 11 The silicon (Si) reacts to form Cu 3 Si (Cu 3 Si) which is the nucleus of the growth of the fragments 29. Then, if this Cu 3 Si reacts with the moisture contained in the air, Cu 3 O containing Cu 2 O and Cu will form on the surface of Cu 3 Si Floor.

碎片29的增大化推測是經過如上述的過程而產生。然後，若附著在加工槽11c內部的碎片29進行增大化，則會有碎片29與金屬層19等接觸而產生短路，招致分割晶圓11得到之晶片的品質下降的情況。因此，去除碎片29為較佳。It is presumed that the increase in the debris 29 is generated through the process described above. Then, if the debris 29 adhering to the inside of the processing groove 11c is increased, the debris 29 comes into contact with the metal layer 19 or the like to cause a short circuit, which may cause the quality of the wafer obtained by dividing the wafer 11 to deteriorate. Therefore, it is better to remove the debris 29.

在本實施方式中，藉由雷射光束的照射而在晶圓11形成加工槽11c後，進行促進於加工槽11c內部附著之碎片29增大化的處理（增大化促進步驟）。若使碎片29增大化，則在實施之後的步驟（藉由切割刀片切割晶圓等）時，會變得容易同時去除碎片29。因此，不用追加乾式蝕刻等大規模的步驟便能容易地去除碎片29，能夠抑制晶片製造成本增加，同時能防止晶片的品質下降。In the present embodiment, after the processing groove 11c is formed on the wafer 11 by the irradiation of the laser beam, a process to promote the enlargement of the debris 29 adhering to the inside of the processing groove 11c (enlargement promotion step) is performed. When the fragments 29 are enlarged, it becomes easy to remove the fragments 29 at the same time when performing the subsequent steps (cutting the wafer with a dicing blade, etc.). Therefore, the debris 29 can be easily removed without adding large-scale steps such as dry etching, which can suppress the increase in wafer manufacturing cost and prevent the deterioration of the wafer quality.

碎片29的增大化推測是如上述的方式，藉由碎片29所含有的銅（Cu）與晶圓11所含有的矽（Si）及水分反應（以下稱為增大化反應）而產生。因此，若促進增大化反應，則被認為也會促進碎片29的增大化。The increase in the fragments 29 is presumed to be generated by the reaction of the copper (Cu) contained in the fragments 29 with the silicon (Si) and the moisture contained in the wafer 11 (hereinafter referred to as the increase reaction) as described above. Therefore, if the increasing reaction is promoted, it is considered that the increasing of the fragments 29 is also promoted.

增大化反應的促進是藉由將晶圓11配置在高溫或高濕的環境下而能實施。例如，藉由將晶圓11配置在濕度75%以上的環境下，或是溫度50℃以上200℃以下的環境下，促進增大化反應。此外，也可以將晶圓11配置在同時滿足這些條件的環境下。The acceleration of the amplification reaction can be implemented by arranging the wafer 11 in a high-temperature or high-humidity environment. For example, by arranging the wafer 11 in an environment with a humidity of 75% or more, or an environment with a temperature of 50°C or more and 200°C or less, the amplification reaction is promoted. In addition, the wafer 11 may be arranged in an environment that satisfies these conditions at the same time.

再者，如上述的增大化反應包含矽化三銅（Cu3 Si）與水分的反應。因此，為了促進碎片29的增大化，特別將晶圓11配置在濕度75%以上的高濕度環境下為較佳。Furthermore, the above-mentioned amplification reaction includes the reaction of Cu 3 Si and moisture. Therefore, in order to promote the increase of the debris 29, it is particularly preferable to arrange the wafer 11 in a high humidity environment with a humidity of 75% or more.

但是。促進增大化反應的處理並不限於上述。例如，也可以將晶圓11配置在壓力比大氣壓還大的高壓環境下。此外，也可以將晶圓11配置在溫度是高溫與低溫交互變化的環境下。再者，能設定高溫是比室溫還高的溫度（例如150℃的程度），能設定低溫是比室溫還低的溫度（例如-65℃的程度）。but. The treatment for accelerating the amplification reaction is not limited to the above. For example, the wafer 11 may be arranged in a high-pressure environment having a pressure higher than atmospheric pressure. In addition, the wafer 11 may be arranged in an environment where the temperature is alternately high and low. Furthermore, high temperature can be set to a temperature higher than room temperature (for example, about 150°C), and low temperature can be set to a temperature lower than room temperature (for example, -65°C).

此外，膠膜21（參照圖3）較佳為在增大化促進步驟的實施中，以具有對晶圓11的保持不會有阻礙程度之耐熱性的材料來形成。此情況下，在實施增大化促進步驟前，因為不需要將膠膜21從晶圓11上剝離，所以可以進行步驟的簡略化。In addition, the adhesive film 21 (refer to FIG. 3) is preferably formed of a material having heat resistance that does not hinder the holding of the wafer 11 during the implementation of the enlargement promotion step. In this case, before performing the enlargement promotion step, since it is not necessary to peel off the adhesive film 21 from the wafer 11, the step can be simplified.

若實施上述的增大化促進步驟，則於加工槽11c內部附著的碎片29會增大化。圖6（B）為表示碎片29增大化之狀態的剖面圖。碎片29產生時，雖然碎片29的直徑是例如1μm以下的程度。但藉由促進增大化反應，碎片29的直徑例如會增大至10μm的程度。If the above-mentioned enlargement promotion step is carried out, the fragments 29 adhering inside the processing groove 11c will increase. FIG. 6(B) is a cross-sectional view showing a state where the fragments 29 are enlarged. When the fragments 29 are generated, the diameter of the fragments 29 is, for example, about 1 μm or less. However, by accelerating the increasing reaction, the diameter of the debris 29 increases to about 10 μm, for example.

接著，沿著加工槽11c分割晶圓11（分割步驟 ）。晶圓11的分割是，例如藉由使用裝設有環狀切割刀片的切割裝置來切割晶圓11而進行。Next, the wafer 11 is divided along the processing groove 11c (dividing step). The division of the wafer 11 is performed, for example, by cutting the wafer 11 using a cutting device equipped with a ring-shaped cutting blade.

圖7為表示切割裝置10的立體圖。切割裝置10具備：卡盤台12，保持晶圓11；以及切割單元14，具備切割刀片18，該切割刀片18切割藉由卡盤台15所保持之晶圓11。FIG. 7 is a perspective view showing the cutting device 10. The dicing device 10 includes: a chuck table 12 that holds a wafer 11; and a dicing unit 14 that includes a dicing blade 18 that cuts the wafer 11 held by the chuck table 15.

卡盤台12是透過膠膜21吸引保持晶圓11。具體而言，卡盤台12的上表面構成有保持晶圓11的保持面，此保持面透過於卡盤台12內部形成之吸引通路（未圖示）而與吸引源連接。The chuck table 12 attracts and holds the wafer 11 through the adhesive film 21. Specifically, the upper surface of the chuck table 12 constitutes a holding surface that holds the wafer 11, and this holding surface is connected to the suction source through a suction path (not shown) formed inside the chuck table 12.

在卡盤台12的周圍設置有夾持並固定環狀框架的多個夾具（未圖示）。此外，卡盤台12與設置在卡盤台12之下部側的移動機構（未圖示）及旋轉機構（未圖示）連接。卡盤台12是藉由移動機構在X軸方向（加工進給方向）及Y軸方向（分度進給方向）上移動，藉由旋轉機構繞著與Z軸方向（垂直方向）呈大致平行的旋轉軸旋轉。A plurality of clamps (not shown) that clamp and fix the ring frame are provided around the chuck table 12. In addition, the chuck table 12 is connected to a moving mechanism (not shown) and a rotation mechanism (not shown) provided on the lower side of the chuck table 12. The chuck table 12 is moved in the X axis direction (machining feed direction) and the Y axis direction (indexing feed direction) by the moving mechanism, and is approximately parallel to the Z axis direction (vertical direction) by the rotating mechanism The axis of rotation rotates.

晶圓11是將正面11a側露出於上方的方式，透過膠膜21而被卡盤台12的保持面所支撐。此外，環狀框架23藉由在卡盤台12周圍備有的夾具而被固定。此狀態下，若使吸引源的負壓作用於卡盤台12的保持面，晶圓11藉由卡盤台12而被吸引保持。The wafer 11 is supported by the holding surface of the chuck table 12 through the adhesive film 21 so that the front surface 11a side is exposed upward. In addition, the ring frame 23 is fixed by a clamp provided around the chuck table 12. In this state, when the negative pressure of the suction source is applied to the holding surface of the chuck table 12, the wafer 11 is sucked and held by the chuck table 12.

在卡盤台4的上方配置有切割單元14。切割單元14具備主軸外殼16，主軸外殼16內部容納有與馬達等的旋轉驅動源連接的主軸（未圖示）。主軸的前端部是露出於主軸外殼16的外部，此前端部裝設有圓環狀的切割刀片18。A cutting unit 14 is arranged above the chuck table 4. The cutting unit 14 includes a spindle housing 16 that houses a spindle (not shown) connected to a rotational drive source such as a motor. The front end portion of the main shaft is exposed to the outside of the main shaft housing 16, and the front end portion is provided with an annular cutting blade 18.

切割刀片18是藉由將以金剛石等形成的磨粒用結合材結合而形成。作為結合材，例如使用金屬結合劑、樹脂結合劑、陶瓷結合劑等。藉由使主軸旋轉而使切割刀片18旋轉，並藉由使切割刀片18切入被卡盤台12所保持的晶圓11，進行晶圓11的切割加工。The cutting blade 18 is formed by bonding abrasive particles formed of diamond or the like with a bonding material. As the bonding material, for example, a metal bonding agent, a resin bonding agent, a ceramic bonding agent, or the like is used. By rotating the main shaft, the cutting blade 18 is rotated, and by cutting the cutting blade 18 into the wafer 11 held by the chuck table 12, the wafer 11 is cut.

此外，在切割單元14的側方配置有攝像單元20，該攝像單元20用於拍攝藉由卡盤台12所保持的晶圓11等。根據此攝像單元20取得的影像來控制卡盤台12的位置及切割單元14的位置。In addition, an imaging unit 20 is disposed on the side of the dicing unit 14, and the imaging unit 20 is used to image the wafer 11 held by the chuck table 12 and the like. Based on the image acquired by this imaging unit 20, the position of the chuck table 12 and the position of the cutting unit 14 are controlled.

圖8為表示分割步驟之狀態的剖面圖。藉由切割刀片18切割晶圓11時，首先，以將切割刀片18的下端18a配置在比晶圓11背面11b更下方的位置的方式，定位切割單元14。若在此狀態使卡盤台12在加工進給方向上移動（加工進給），則切割刀片18與晶圓11會沿著分割預定線13相對地移動。其結果，切割刀片18切入晶圓11，晶圓11沿著加工槽11c被切斷。8 is a cross-sectional view showing the state of the dividing step. When dicing the wafer 11 by the dicing blade 18, first, the dicing unit 14 is positioned so that the lower end 18a of the dicing blade 18 is arranged below the back surface 11b of the wafer 11. If the chuck table 12 is moved in the processing feed direction (processing feed) in this state, the dicing blade 18 and the wafer 11 will relatively move along the line to be divided 13. As a result, the dicing blade 18 cuts into the wafer 11, and the wafer 11 is cut along the processing groove 11c.

切割刀片18的寬度比加工槽11c的寬度還小，切割刀片18是如圖8所示，以通過被加工槽11c的側壁11d、11e包夾之區域的方式切割晶圓11。因為加工槽11c所形成的區域是去除了金屬層19的狀態，所以迴避掉切割刀片18與金屬層19接觸所造成之毛邊的產生。The width of the dicing blade 18 is smaller than the width of the processing groove 11c. As shown in FIG. 8, the dicing blade 18 cuts the wafer 11 so as to pass through the area sandwiched by the side walls 11d and 11e of the processing groove 11c. Since the area formed by the processing groove 11c is in a state where the metal layer 19 is removed, the generation of burrs caused by the contact between the cutting blade 18 and the metal layer 19 is avoided.

此外。晶圓11切割時，切割刀片18與附著於加工槽11c內部的碎片29（參照圖6（B））接觸而去除碎片29。因為碎片29經過增大化促進步驟而增大化，所以在晶圓11切割時，容易與切割刀片18接觸，且容易被去除。Also. When the wafer 11 is diced, the dicing blade 18 comes into contact with the debris 29 (see FIG. 6(B)) attached to the inside of the processing tank 11 c to remove the debris 29. Since the debris 29 is enlarged through the enlargement promotion step, when the wafer 11 is diced, it is easily contacted with the dicing blade 18 and easily removed.

再者，切割刀片18之具體的寬度或位置是根據碎片29的大小而被適當設定。例如，使切割刀片18沿著加工槽11c切入時，切割刀片18一側的側面18b與側壁11d之間的距離，及切割刀片18另一側的側面18c與側壁11e之間的距離是以成為未達碎片29直徑長度（例如10μm的程度）的方式，設定切割刀片18的尺寸或位置。此外，也可以沿著同一條加工槽11c使切割刀片18切入2次，分別進行於側壁11d側附著之碎片29的去除及於側壁11e附著之碎片29的去除。Furthermore, the specific width or position of the cutting blade 18 is appropriately set according to the size of the fragments 29. For example, when the cutting blade 18 is cut along the processing groove 11c, the distance between the side surface 18b on one side of the cutting blade 18 and the side wall 11d and the distance between the side surface 18c on the other side of the cutting blade 18 and the side wall 11e are The size or position of the cutting blade 18 is set so as not to reach the diameter length (eg, about 10 μm) of the fragments 29. In addition, the cutting blade 18 may be cut twice along the same processing groove 11c to remove the debris 29 adhering to the side wall 11d side and the debris 29 adhering to the side wall 11e, respectively.

在此分割步驟中，晶圓11的分割與碎片29的去除是在同一步驟實施。藉此，不需要追加新步驟就能去除碎片29。In this division step, the division of the wafer 11 and the removal of the fragments 29 are performed in the same step. Thereby, the debris 29 can be removed without adding new steps.

此外，以切割刀片18切割晶圓11時，供給純水等的切割液至切割刀片18及晶圓11。藉由供給此切割液，冷卻切割刀片18及晶圓11的同時，沖洗經由切割產生的碎屑（切割碎屑）。此時，因為藉由切割刀片18去除的碎片29也同時被沖洗，所以能防止碎片29殘留在晶圓11上。In addition, when the wafer 11 is diced by the dicing blade 18, a cutting liquid such as pure water is supplied to the dicing blade 18 and the wafer 11. By supplying this cutting liquid, the cutting blade 18 and the wafer 11 are cooled, and the debris generated by the cutting (cutting debris) is washed. At this time, since the fragments 29 removed by the dicing blade 18 are also washed at the same time, the fragments 29 can be prevented from remaining on the wafer 11.

此外，保護膜27是以水溶性樹脂形成的情況，若供給切割液至晶圓11，則保護膜27被去除。換言之，因為藉由分割步驟的實施也進行了保護膜27的去除，所以不需要另外實施用於去除保護膜27的處理，讓步驟簡略化。In addition, when the protective film 27 is formed of a water-soluble resin, when the dicing liquid is supplied to the wafer 11, the protective film 27 is removed. In other words, since the protective film 27 is also removed by the implementation of the division step, there is no need to separately perform a process for removing the protective film 27, and the steps are simplified.

但是，在分割步驟實施後，殘留保護膜27的情況下，也可以另外實施藉由供給純水等至晶圓11來去除保護膜27的步驟（去除步驟）。此外，保護膜27也可以藉由噴射純水與氣體（空氣等）的混合流體至晶圓11而去除。However, when the protective film 27 remains after the division step is performed, a step (removal step) of removing the protective film 27 by supplying pure water or the like to the wafer 11 may be separately performed. In addition, the protective film 27 may also be removed by spraying a mixed fluid of pure water and gas (air, etc.) onto the wafer 11.

然後，若沿著全部的分割預定線13切斷晶圓11，則晶圓11被分割成分別具備元件15的多個晶片。在本實施方式中，因為在分割步驟去除碎片29，所以能迴避碎片29往晶片的附著，能防止晶片的品質下降。Then, when the wafer 11 is cut along all the lines to be divided 13, the wafer 11 is divided into a plurality of wafers each including the element 15. In this embodiment, since the fragments 29 are removed in the dividing step, the adhesion of the fragments 29 to the wafer can be avoided, and the quality of the wafer can be prevented from deteriorating.

再者，在上述中，雖然說明關於使用切割刀片18分割晶圓11的例子，但分割晶圓11的方法不限於上述。例如，也可以使用雷射加工裝置或電漿蝕刻裝置等來實施分割步驟。In addition, in the above, although the example of dividing the wafer 11 using the dicing blade 18 is described, the method of dividing the wafer 11 is not limited to the above. For example, a laser processing device, a plasma etching device, or the like may be used to perform the dividing step.

使用雷射加工裝置的情況下，藉由沿著加工槽11c照射雷射光束，沿著分割預定線13於晶圓11的內部形成被改質的層（改質層）。因為此改質層形成的區域變得比晶圓11的其他區域還脆，所以若施加外力於形成改質層的晶圓11，則晶圓11會以改質層作為起點而被分割。施加至晶圓11的外力為，例如藉由擴張膠膜21而實施。In the case of using a laser processing apparatus, by irradiating the laser beam along the processing groove 11 c, a modified layer (modified layer) is formed inside the wafer 11 along the line to be divided 13. Since the region formed by the modified layer becomes more brittle than other regions of the wafer 11, if an external force is applied to the wafer 11 forming the modified layer, the wafer 11 will be divided using the modified layer as a starting point. The external force applied to the wafer 11 is implemented by expanding the adhesive film 21, for example.

使用電漿蝕刻裝置的情況下，在形成覆蓋晶圓11之加工槽11c以外區域的光罩之狀態，藉由電漿蝕刻加工晶圓11。藉此，晶圓11沿著加工槽11c被蝕刻且分割。In the case of using a plasma etching apparatus, the wafer 11 is processed by plasma etching in a state where a photomask covering the area other than the processing groove 11c of the wafer 11 is formed. Thereby, the wafer 11 is etched and divided along the processing groove 11c.

如上述，藉由切割刀片的切割以外之方法分割晶圓11的情況，在增大化促進步驟後，實施去除保護膜27的步驟（去除步驟）。此去除步驟中，供給純水等的清洗液至晶圓11並去除以水溶性樹脂形成的保護膜27。As described above, when the wafer 11 is divided by a method other than dicing by the dicing blade, after the enlargement promoting step, a step of removing the protective film 27 (removing step) is performed. In this removal step, a cleaning solution such as pure water is supplied to the wafer 11 to remove the protective film 27 formed of a water-soluble resin.

去除步驟是，例如朝向晶圓11噴射從噴嘴而來之純水等的清洗液。若向晶圓11噴射清洗液，則去除保護膜27的同時，附著在加工槽11c內部的增大化碎片29藉由清洗液而被沖洗並去除。The removal step is, for example, spraying a cleaning solution such as pure water from the nozzle toward the wafer 11. When the cleaning liquid is sprayed onto the wafer 11, the protective film 27 is removed, and the enlarged debris 29 adhering to the inside of the processing tank 11c is washed and removed by the cleaning liquid.

如上，本實施方式相關的晶片製造方法是，藉由雷射光束的照射而在晶圓11形成加工槽11c後，進行於加工槽11c內部附著之碎片29增大化的處理。若使碎片29增大化，則在實施之後的步驟（藉由切割刀片18切割晶圓11等）時，會變得容易同時去除碎片29。因此，不用追加大規模的步驟便能容易地去除碎片29，能夠抑制晶片製造成本增加，同時能防止晶片的品質下降。As described above, in the wafer manufacturing method according to this embodiment, after the processing groove 11c is formed on the wafer 11 by the irradiation of the laser beam, the debris 29 adhering to the inside of the processing groove 11c is increased. When the fragments 29 are enlarged, it becomes easy to remove the fragments 29 at the same time when performing the subsequent steps (dicing the wafer 11 by the dicing blade 18 and the like). Therefore, the debris 29 can be easily removed without adding a large-scale step, which can suppress an increase in the manufacturing cost of the wafer and prevent the deterioration of the wafer quality.

其他，上述實施方式相關的構造、方法等，只要不脫離本發明目的之範圍，就可以適當變更而實施。In addition, the structure, method, and the like related to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the present invention.

11‧‧‧晶圓 11a‧‧‧正面 11b‧‧‧背面 11c‧‧‧加工槽 11d、11e‧‧‧側壁 11f‧‧‧底部 13‧‧‧分割預定線 15‧‧‧元件 17‧‧‧層積體 19‧‧‧金屬層 21‧‧‧膠膜 23‧‧‧環狀框架 23a‧‧‧開口 25‧‧‧框架單元 27‧‧‧保護膜 29‧‧‧碎片 2‧‧‧雷射加工裝置 4‧‧‧卡盤台 6‧‧‧雷射加工單元 8‧‧‧攝像單元 10‧‧‧切割裝置 12‧‧‧卡盤台 14‧‧‧切割單元 16‧‧‧主軸外殼 18‧‧‧切割刀片 18a‧‧‧下端 18b、18c‧‧‧側面 20‧‧‧攝像單元11‧‧‧ Wafer 11a‧‧‧Front 11b‧‧‧Back 11c‧‧‧Processing slot 11d, 11e‧‧‧side wall 11f‧‧‧Bottom 13‧‧‧schedule 15‧‧‧ Components 17‧‧‧Layered body 19‧‧‧Metal layer 21‧‧‧film 23‧‧‧ring frame 23a‧‧‧ opening 25‧‧‧Frame unit 27‧‧‧Protection film 29‧‧‧ Fragment 2‧‧‧Laser processing device 4‧‧‧Chuck table 6‧‧‧Laser processing unit 8‧‧‧Camera unit 10‧‧‧Cutting device 12‧‧‧Chuck table 14‧‧‧Cutting unit 16‧‧‧spindle housing 18‧‧‧Cutting blade 18a‧‧‧lower 18b, 18c‧‧‧Side 20‧‧‧Camera unit

圖1為表示晶圓的立體圖。 圖2為表示晶圓的剖面圖。 圖3為表示框架單元的立體圖。 圖4為表示形成有保護膜之晶圓的剖面圖。 圖5為表示雷射加工裝置的立體圖。 圖6的圖6（A）為表示形成有加工槽之晶圓的剖面圖，圖6（B）為表示碎片增大化之狀態的剖面圖。 圖7為表示切割裝置的立體圖。 圖8為表示分割步驟之狀態的剖面圖。FIG. 1 is a perspective view showing a wafer. 2 is a cross-sectional view showing a wafer. 3 is a perspective view showing a frame unit. 4 is a cross-sectional view showing a wafer on which a protective film is formed. 5 is a perspective view showing a laser processing apparatus. 6(A) of FIG. 6 is a cross-sectional view showing a wafer in which a processing groove is formed, and FIG. 6(B) is a cross-sectional view showing a state where debris is increasing. 7 is a perspective view showing a cutting device. 8 is a cross-sectional view showing the state of the dividing step.

11‧‧‧晶圓 11‧‧‧ Wafer

11a‧‧‧正面 11a‧‧‧Front

11b‧‧‧背面 11b‧‧‧Back

11c‧‧‧加工槽 11c‧‧‧Processing slot

11d、11e‧‧‧側壁 11d, 11e‧‧‧side wall

11f‧‧‧底部 11f‧‧‧Bottom

13‧‧‧分割預定線 13‧‧‧schedule

15‧‧‧元件 15‧‧‧ Components

17‧‧‧層積體 17‧‧‧Layered body

19‧‧‧金屬層 19‧‧‧Metal layer

27‧‧‧保護膜 27‧‧‧Protection film

29‧‧‧碎片 29‧‧‧ Fragment

Claims (5)

一種晶片製造方法，分割晶圓並製造晶片，該晶圓含有矽（Si）並在其正面側具備：元件，形成於藉由多條分割預定線所劃分的區域；以及金屬層，含有銅（Cu）並形成於該分割預定線上；該晶片製造方法的特徵在於含有： 保護膜形成步驟，在該晶圓的正面側形成保護膜； 雷射加工槽形成步驟，在該保護膜形成步驟實施後，從該晶圓的正面側沿著該分割預定線照射對該晶圓具有吸收性之波長的雷射光束，一邊去除該金屬層一邊在該晶圓上形成加工槽； 增大化促進步驟，在該雷射加工槽形成步驟實施後，促進碎片的增大化，該碎片藉由該加工槽的形成而產生且附著在該加工槽的內部； 分割步驟，在該增大化促進步驟實施後，沿著該加工槽分割該晶圓。A wafer manufacturing method that divides a wafer and manufactures a wafer that contains silicon (Si) and includes on its front side: an element formed in a region divided by a plurality of predetermined dividing lines; and a metal layer containing copper ( Cu) and formed on the planned dividing line; the wafer manufacturing method is characterized by containing: A protective film forming step, forming a protective film on the front side of the wafer; Laser processing groove forming step, after performing the protective film forming step, irradiating a laser beam with a wavelength of absorption to the wafer from the front side of the wafer along the planned dividing line while removing the metal layer Forming a processing groove on the wafer; An enlargement promoting step, after the laser processing groove forming step is carried out, the enlargement of debris is promoted, and the debris is generated by the formation of the processing groove and adheres to the inside of the processing groove; In the dividing step, after the enlargement promoting step is performed, the wafer is divided along the processing groove. 如申請專利範圍第1項所述之晶片製造方法，其中，更包含去除步驟，在該增大化促進步驟實施後，去除該保護膜。The wafer manufacturing method as described in item 1 of the scope of the patent application further includes a removal step, and the protective film is removed after the enlargement promotion step is implemented. 如申請專利範圍第1或2項所述之晶片製造方法，其中，該切割步驟是使寬度比該加工槽的寬度還小的切割刀片沿著該加工槽切入該晶圓並分割該晶圓。The wafer manufacturing method as described in item 1 or 2 of the patent application range, wherein the cutting step is to make a cutting blade with a width smaller than the width of the processing groove cut into the wafer along the processing groove and divide the wafer. 如申請專利範圍第1或2項所述之晶片製造方法，其中，該增大化促進步驟是將該晶圓配置在溫度50℃以上200℃以下的環境下，藉此促進該碎片的增大化。The wafer manufacturing method as described in item 1 or 2 of the patent application range, wherein the step of increasing the acceleration is to arrange the wafer in an environment with a temperature of 50° C. or higher and 200° C. or lower, thereby promoting the increase of the debris Change. 如申請專利範圍第1或2項所述之晶片製造方法，其中，該增大化促進步驟是將該晶圓配置在濕度75%以上的環境下，藉此促進該碎片的增大化。The wafer manufacturing method as described in item 1 or 2 of the patent application range, wherein the step of increasing the acceleration is to arrange the wafer in an environment with a humidity of 75% or more, thereby promoting the increase of the debris.
TW108126555A 2018-07-31 2019-07-26 Wafer Manufacturing Method TWI800668B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-143126 2018-07-31
JP2018143126A JP7072993B2 (en) 2018-07-31 2018-07-31 Chip manufacturing method

Publications (2)

Publication Number Publication Date
TW202008452A true TW202008452A (en) 2020-02-16
TWI800668B TWI800668B (en) 2023-05-01

Family

ID=69383822

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108126555A TWI800668B (en) 2018-07-31 2019-07-26 Wafer Manufacturing Method

Country Status (5)

Country Link
JP (1) JP7072993B2 (en)
KR (1) KR102699722B1 (en)
CN (1) CN110783185B (en)
SG (1) SG10201906679RA (en)
TW (1) TWI800668B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7273756B2 (en) * 2020-03-18 2023-05-15 株式会社東芝 Semiconductor device and its manufacturing method
JP7450426B2 (en) * 2020-03-24 2024-03-15 株式会社ディスコ Processing method of workpiece
KR102405460B1 (en) * 2020-06-26 2022-06-07 매그나칩 반도체 유한회사 Semiconductor Die Forming and Packaging Method Using Ultrashort pulse Laser Micromachining
CN113649709A (en) * 2021-08-16 2021-11-16 湖北三维半导体集成创新中心有限责任公司 Wafer cutting method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583279B2 (en) * 1998-01-13 2004-11-04 三菱電機株式会社 Drilling method
JP4694845B2 (en) 2005-01-05 2011-06-08 株式会社ディスコ Wafer division method
JP2011035302A (en) * 2009-08-05 2011-02-17 Renesas Electronics Corp Method of manufacturing semiconductor device
US8383984B2 (en) * 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
JP2014093445A (en) 2012-11-05 2014-05-19 Disco Abrasive Syst Ltd Method for processing optical device wafer
US9919380B2 (en) * 2013-02-23 2018-03-20 Coherent, Inc. Shaping of brittle materials with controlled surface and bulk properties
JP2015020195A (en) * 2013-07-19 2015-02-02 アイシン精機株式会社 Laser processor, laser processing method and laser oscillator
JP6189700B2 (en) * 2013-10-03 2017-08-30 株式会社ディスコ Wafer processing method
JP2015138857A (en) 2014-01-22 2015-07-30 株式会社ディスコ Wafer processing method
JP2016162809A (en) 2015-02-27 2016-09-05 株式会社ディスコ Wafer processing method
CN104716066B (en) * 2015-03-20 2018-03-30 上海华力微电子有限公司 One kind detects the defects of figure bottom photoetching glue residua detection method
JP6587911B2 (en) * 2015-11-16 2019-10-09 株式会社ディスコ Wafer division method
CN106229309B (en) * 2016-07-20 2019-05-07 日月光半导体(上海)有限公司 Package substrate and its manufacturing method

Also Published As

Publication number Publication date
CN110783185B (en) 2023-10-10
KR102699722B1 (en) 2024-08-27
KR20200014195A (en) 2020-02-10
JP2020021786A (en) 2020-02-06
JP7072993B2 (en) 2022-05-23
SG10201906679RA (en) 2020-02-27
TWI800668B (en) 2023-05-01
CN110783185A (en) 2020-02-11

Similar Documents

Publication Publication Date Title
TW202008452A (en) Manufacturing method of chips capable of inhibiting increase of manufacturing cost and preventing quality deterioration of chips
KR102163441B1 (en) Wafer processing method
JP6587911B2 (en) Wafer division method
TW202006810A (en) Semiconductor wafer processing method
TW201419392A (en) Wafer processing method
JP2016157892A (en) Wafer processing method
JP2018098296A (en) Wafer processing method
KR102084269B1 (en) Laser machining apparatus and method for coating protection film
JP6563728B2 (en) Laser processing method
JP2014086612A (en) Laser processing method
JP2016162809A (en) Wafer processing method
JP6438304B2 (en) Wafer processing method
JP6713214B2 (en) Device wafer processing method
TW202310023A (en) Manufacturing method of device chip
TWI831886B (en) Device chip manufacturing method
JP7321653B2 (en) Display panel manufacturing method
JP7358011B2 (en) How to manufacture multiple device chips
JP2020102588A (en) Method for processing wafer
JP5288785B2 (en) Wafer processing equipment
JP7460275B2 (en) Wafer processing method
JP7450426B2 (en) Processing method of workpiece
JP2013021209A (en) Method for processing wafer
KR102708971B1 (en) Semiconductor wafer processing method
TW202230486A (en) Chip manufacturing method
KR20230050239A (en) Method for manufacturing device chip