JP2010109228A - Apparatus and method for removing chamfering portion from wafer - Google Patents

Apparatus and method for removing chamfering portion from wafer Download PDF

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JP2010109228A
JP2010109228A JP2008281081A JP2008281081A JP2010109228A JP 2010109228 A JP2010109228 A JP 2010109228A JP 2008281081 A JP2008281081 A JP 2008281081A JP 2008281081 A JP2008281081 A JP 2008281081A JP 2010109228 A JP2010109228 A JP 2010109228A
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wafer
cutting
device region
chamfered portion
region
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JP5199831B2 (en
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Kazuma Sekiya
一馬 関家
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Disco Corp
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Disco Abrasive Systems Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To avoid deterioration in the functions and quality of each device, by preventing cutting chips from attaching to and contaminating devices on a surface of a wafer, when removing a chamfering portion from the wafer by cutting. <P>SOLUTION: The wafer W has a front surface Wa having a device region W1, in which multiple devices are formed, and a peripheral excess region W2 surrounding the device region W1; and an arc-shaped chamfering portion W3, which is formed at the edge of the peripheral excess area W2 and extends from the front surface Wa to the rear surface Wb. An apparatus for removing the chamfering portion W3 from the wafer W by cutting is provided with an opposing member 84, that is opposed to the device region W1 and a clearance 9 that is formed between the device region W1 and the opposing member 84. By removing the chamfering portion W3, cutting while making the wafer W rotate with a water layer 90 formed in the clearance 9, cutting of chips from attaching to the devices is prevented. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、周縁に面取り部を有するウェーハの当該面取り部を切削により除去する装置及び方法に関するものである。   The present invention relates to an apparatus and a method for removing a chamfered portion of a wafer having a chamfered portion on the periphery by cutting.

IC、LSI等のデバイスが分割予定ラインによって区画されて表面に形成されたウェーハは、ダイシング装置によって個々のデバイスのデバイスに分割され、各種電子機器に利用されている。ウェーハは、個々のデバイスに分割される前に、裏面が研削されて所定の厚さに形成される。   A wafer formed by dividing a device such as an IC or LSI on a surface by dividing lines is divided into individual device devices by a dicing apparatus and used for various electronic devices. Before the wafer is divided into individual devices, the back surface is ground to a predetermined thickness.

しかし、ウェーハの周縁には、製造過程において欠けや割れが生じるのを防止するために、円弧状の面取りが施されているため、裏面を研削してウェーハを薄くすると、面取りされた面の一部が残存してウェーハの周縁がナイフのように尖鋭化し、取り扱いが危険になると共に欠けが生じやすくなるという問題がある。   However, arc edges are chamfered around the periphery of the wafer to prevent chipping and cracking during the manufacturing process. Therefore, if the wafer is thinned by grinding the back surface, There is a problem that the portion remains and the periphery of the wafer is sharpened like a knife, which makes handling difficult and easily causes chipping.

そこで、ウェーハの裏面を研削する前に切削により面取り部を除去することにより、裏面を研削しても周縁が尖鋭化されないようにする技術が提案されている(例えば特許文献1参照)。   Therefore, a technique has been proposed in which the chamfered portion is removed by cutting before grinding the back surface of the wafer so that the peripheral edge is not sharpened even if the back surface is ground (see, for example, Patent Document 1).

特開2000−173961号公報JP 2000-173961 A

しかし、切削により面取り部を除去すると、切削によって生じた切削屑が切削水と共にウェーハの表面に漂いデバイスの表面に付着してデバイスの品質を低下させるという問題がある。特に、例えばCMOSイメージセンサーのように異物の付着が機能や品質に大きく影響するようなデバイスの場合は、看過できない問題となる。   However, when the chamfered portion is removed by cutting, there is a problem that the cutting waste generated by the cutting drifts together with the cutting water on the surface of the wafer and adheres to the surface of the device to deteriorate the quality of the device. In particular, in the case of a device such as a CMOS image sensor in which the adhesion of foreign matter greatly affects the function and quality, it becomes a problem that cannot be overlooked.

そこで、本発明が解決しようとする課題は、切削によりウェーハ周縁の面取り部を除去する場合において、ウェーハの表面に切削屑が付着しデバイスが汚染されるのを防止して、デバイスの機能及び品質が低下しないようにすることにある。   Therefore, the problem to be solved by the present invention is to prevent the chip from being attached to the wafer surface and contaminating the device when removing the chamfered portion at the periphery of the wafer by cutting. Is to prevent it from falling.

第一の発明は、複数のデバイスが形成されたデバイス領域とデバイス領域を囲繞する外周余剰領域とが表面に形成され外周余剰領域の周縁に表面から裏面にかけて円弧状の面取り部が形成されたウェーハの面取り部を切削により除去するウェーハ面取り部除去装置に関するもので、ウェーハを保持し回転可能なチャックテーブルと、回転可能な切削ブレードを備えチャックテーブルに保持されたウェーハの外周余剰領域を切削する切削手段と、少なくともデバイス領域に対面可能な対面部材を備え、チャックテーブルに保持されたウェーハのデバイス領域と対面部材との間に形成される隙間に水層を形成する水層形成手段とを備えている。   A first invention is a wafer in which a device region in which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region are formed on the surface, and an arc-shaped chamfered portion is formed on the periphery of the outer peripheral surplus region from the surface to the back surface The present invention relates to a wafer chamfered part removing apparatus that removes a chamfered part of a wafer by cutting, and a cutting table that holds a wafer and rotates a chuck table that is rotatable and a peripheral cutting area of the wafer that is held on the chuck table by a rotatable cutting blade. And a water layer forming means for forming a water layer in a gap formed between the device region of the wafer held on the chuck table and the facing member. Yes.

第二の発明は、複数のデバイスが形成されたデバイス領域とデバイス領域を囲繞する外周余剰領域とが表面に形成され外周余剰領域の周縁に表面から裏面にかけて円弧状の面取り部が形成されたウェーハの面取り部を切削により除去するウェーハ面取り部の除去方法に関するもので、ウェーハのデバイス領域に対して対面部材を対面させてデバイス領域と対面部材との間に隙間を形成し、隙間に水層を形成した状態で、ウェーハを回転させると共に外周余剰領域のうち面取り部の内周側を切削して面取り部を除去する。   A second invention is a wafer in which a device region in which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region are formed on the surface, and an arc-shaped chamfered portion is formed on the periphery of the outer peripheral surplus region from the surface to the back surface The chamfered portion of the wafer is removed by cutting, and a facing member is made to face the device region of the wafer to form a gap between the device region and the facing member, and a water layer is formed in the gap. In the formed state, the wafer is rotated and the chamfered portion is removed by cutting the inner peripheral side of the chamfered portion in the outer peripheral surplus region.

本発明では、ウェーハのデバイス領域と対面部材との間に隙間を形成し、その隙間に水層を形成した状態で切削により面取り部を除去することができるため、切削屑がデバイスに付着することがない。したがって、デバイスの機能及び品質が低下するのを防止することができる。   In the present invention, since a gap is formed between the device region of the wafer and the facing member, and the chamfered portion can be removed by cutting in a state in which a water layer is formed in the gap, the cutting dust adheres to the device. There is no. Therefore, it is possible to prevent the function and quality of the device from being deteriorated.

図1に示すウェーハ面取り部除去装置1は、ウェーハを保持するチャックテーブル2と、チャックテーブル2に保持されたウェーハを切削する切削手段3とを備えている。チャックテーブル2は回転駆動手段4によって駆動されて回転可能であると共に、X軸方向送り手段5によって駆動されてX軸方向に移動可能となっている。一方、切削手段3は、Y軸方向送り手段6によって駆動されてY軸方向に移動可能であると共に、Z軸方向送り手段7によって駆動されてZ軸方向に移動可能となっている。   A wafer chamfer removing apparatus 1 shown in FIG. 1 includes a chuck table 2 that holds a wafer and a cutting means 3 that cuts the wafer held on the chuck table 2. The chuck table 2 can be rotated by being driven by the rotation driving means 4 and can be moved in the X-axis direction by being driven by the X-axis direction feeding means 5. On the other hand, the cutting means 3 is driven by the Y-axis direction feeding means 6 and is movable in the Y-axis direction, and is also driven by the Z-axis direction feeding means 7 and is movable in the Z-axis direction.

チャックテーブル2は、切削対象のウェーハよりも若干小径の吸引部20を備えている。チャックテーブル2は、その下方に配設された回転駆動手段4の内部のモータと連結され回転可能となっている。   The chuck table 2 includes a suction unit 20 having a slightly smaller diameter than the wafer to be cut. The chuck table 2 is connected to a motor inside the rotation driving means 4 disposed below the chuck table 2 so as to be rotatable.

切削手段3は、Y軸方向の軸心を有するスピンドル30がハウジング31によって回転可能に支持され、スピンドル30の先端に切削ブレード32が装着されて構成され、ハウジング31の側部には、ウェーハの切削すべき領域を撮像手段330によって撮像し検出するアライメント手段33が固定されている。   The cutting means 3 is configured such that a spindle 30 having an axis in the Y-axis direction is rotatably supported by a housing 31, and a cutting blade 32 is attached to the tip of the spindle 30. An alignment unit 33 that captures and detects an area to be cut by the imaging unit 330 is fixed.

X軸方向送り手段5は、X軸方向の軸心を有するボールネジ50と、ボールネジ50に平行に配設された一対のガイドレール51と、ボールネジ50の一端に連結されたモータ52と、図示しない内部のナットがボールネジ50に螺合すると共に下部がガイドレール51に摺接するスライド部53とから構成され、モータ52に駆動されてボールネジ50が回動するのに伴い、スライド部53がガイドレール51上をX軸方向に摺動し、これに伴いスライド部53に固定された回転駆動手段4及び回転駆動手段4に連結されたチャックテーブル2もX軸方向に移動する構成となっている。   The X-axis direction feeding means 5 includes a ball screw 50 having an axis in the X-axis direction, a pair of guide rails 51 arranged in parallel to the ball screw 50, a motor 52 connected to one end of the ball screw 50, and not shown. An internal nut is screwed into the ball screw 50 and a lower portion is formed of a slide portion 53 that is in sliding contact with the guide rail 51. The slide portion 53 is moved to the guide rail 51 as the ball screw 50 is rotated by being driven by the motor 52. The rotary drive means 4 fixed to the slide part 53 and the chuck table 2 connected to the rotary drive means 4 are also moved in the X-axis direction.

Y軸方向送り手段6は、Y軸方向の軸心を有するボールネジ60と、ボールネジ60に平行に配設された一対のガイドレール61と、ボールネジ60の一端に連結されたパルスモータ62と、図示しない内部のナットがボールネジ60に螺合すると共に下部がガイドレール61に摺接するスライド部63とから構成され、パルスモータ62に駆動されてボールネジ60が回動するのに伴い、スライド部63がガイドレール61上をY軸方向に摺動し、これに伴い切削手段3もY軸方向に移動する構成となっている。   The Y-axis direction feeding means 6 includes a ball screw 60 having an axis in the Y-axis direction, a pair of guide rails 61 arranged in parallel to the ball screw 60, a pulse motor 62 connected to one end of the ball screw 60, and The inner nut is screwed into the ball screw 60 and the lower part is composed of a slide part 63 which is in sliding contact with the guide rail 61. The slide part 63 is guided by the pulse motor 62 as the ball screw 60 rotates. It slides on the rail 61 in the Y-axis direction, and the cutting means 3 is configured to move in the Y-axis direction accordingly.

Z軸方向送り手段7は、Z軸方向の軸心を有するボールネジ70と、ボールネジ70に平行に配設された一対のガイドレール71と、ボールネジ70の一端に連結されたパルスモータ72と、図示しない内部のナットがボールネジ70に螺合すると共に側部がガイドレール71に摺接し切削手段3を支持する支持部73とから構成され、パルスモータ72に駆動されてボールネジ70が回動するのに伴い支持部73がガイドレール71にガイドされてZ軸方向に昇降し、これに伴い切削手段3もZ軸方向に昇降する構成となっている。   The Z-axis direction feeding means 7 includes a ball screw 70 having an axis in the Z-axis direction, a pair of guide rails 71 arranged in parallel to the ball screw 70, a pulse motor 72 connected to one end of the ball screw 70, The inner nut is screwed into the ball screw 70 and the side portion is formed of a support portion 73 that is in sliding contact with the guide rail 71 and supports the cutting means 3, and is driven by the pulse motor 72 to rotate the ball screw 70. Accordingly, the support portion 73 is guided by the guide rail 71 and moves up and down in the Z-axis direction, and the cutting means 3 is also moved up and down in the Z-axis direction.

X軸方向送り手段5を構成するスライド部53には、水層形成手段8が連結されている。水層形成手段8は、スライド部53に連結された基部80と、基部80に対して昇降及び旋回可能な軸部81と、軸部81の上端から水平方向に延び軸部81と共に昇降及び旋回するアーム部82と、アーム部82の先端部から垂下した垂下部83と、垂下部83の下端に位置する対面部材84と、対面部材84から流出させる水を貯留する水源85とを備えている。図示の例では、水源85に蓄えられた水は、バルブ86を介してアーム部82に流入する。対面部材84は、軸部81の回動によりチャックテーブル2に保持されたウェーハに対して対面する位置と対面しない位置とに選択的に位置決めすることができる。   The water layer forming means 8 is connected to the slide portion 53 constituting the X-axis direction feeding means 5. The water layer forming means 8 includes a base portion 80 connected to the slide portion 53, a shaft portion 81 that can be moved up and down with respect to the base portion 80, and a shaft portion 81 that extends horizontally from the upper end of the shaft portion 81 and moves up and down together with the shaft portion 81. Arm part 82, hanging part 83 suspended from the tip of arm part 82, facing member 84 positioned at the lower end of hanging part 83, and water source 85 for storing water flowing out from facing member 84. . In the illustrated example, the water stored in the water source 85 flows into the arm portion 82 via the valve 86. The facing member 84 can be selectively positioned at a position facing the wafer held by the chuck table 2 and a position not facing the wafer held by the chuck table 2 by the rotation of the shaft portion 81.

図2に示す例では、水層形成手段8には、アーム部82、垂下部83及び対面部材84を貫通して流路87が形成されており、流路87を流れた水が対面部材84の下面の流出口840から下方に流出する構成となっている。なお、水層形成手段8は、図1の例ではスライド部53に固定されているが、対面部材84がチャックテーブル2と対面可能な構成であれば、配設位置は図示の例には限定されない。   In the example shown in FIG. 2, the water layer forming means 8 has a flow passage 87 formed through the arm portion 82, the hanging portion 83, and the facing member 84, and the water that has flowed through the flow passage 87 is facing the facing member 84. It is the structure which flows out downward from the outflow port 840 of the lower surface of the. The water layer forming means 8 is fixed to the slide portion 53 in the example of FIG. 1, but the arrangement position is limited to the illustrated example as long as the facing member 84 is configured to face the chuck table 2. Not.

図3に示すように、切削対象のウェーハWの表面Waは、ストリートSによって区画されて複数のデバイスDが形成されたデバイス領域W1と、デバイス領域W1を囲繞する外周余剰領域W2とから構成される。外周余剰領域W2の周縁には、表面Waから裏面Wbにかけて、円弧状に面取りされた面取り部W3が形成されている。   As shown in FIG. 3, the surface Wa of the wafer W to be cut is composed of a device region W1 partitioned by streets S and formed with a plurality of devices D, and an outer peripheral surplus region W2 surrounding the device region W1. The A chamfered portion W3 that is chamfered in an arc shape is formed from the front surface Wa to the back surface Wb at the periphery of the outer peripheral surplus region W2.

図3に示した切削対象のウェーハWは、図1に示すように、裏面Wb側がチャックテーブル2に吸引され、表面Waが露出した状態で保持される。このとき、チャックテーブル2の回転中心とウェーハWの中心とが一致するようにする。   As shown in FIG. 1, the wafer W to be cut shown in FIG. 3 is sucked by the chuck table 2 on the back surface Wb side and is held with the front surface Wa exposed. At this time, the rotation center of the chuck table 2 and the center of the wafer W are made to coincide.

そして、水層形成手段8を構成する対面部材84をチャックテーブル2の移動経路の上方から退避させた状態で、X軸方向送り手段5がウェーハWを撮像手段330の直下に移動させてウェーハWの表面Waを撮像し、切削すべき位置をアライメント手段33が検出し、その検出した位置と切削ブレード32とのY軸方向の位置合わせを行う。この切削すべき位置は、外周余剰領域W2における面取り部W3の内周側である。   Then, in a state where the facing member 84 constituting the water layer forming means 8 is retracted from above the moving path of the chuck table 2, the X-axis direction feeding means 5 moves the wafer W directly below the image pickup means 330, and the wafer W The surface Wa is imaged, the position to be cut is detected by the alignment means 33, and the detected position and the cutting blade 32 are aligned in the Y-axis direction. This position to be cut is on the inner peripheral side of the chamfered portion W3 in the outer peripheral surplus region W2.

次に、X軸方向送り手段5がチャックテーブル2を+X方向に移動させて、ウェーハWの切削すべき位置を切削ブレード32の直下に位置付ける。そして、退避させておいた対面部材84をウェーハWの直上に移動させて下降させることにより、ウェーハWのデバイス領域W1と対面部材84の底面との間に僅かな隙間9を形成すると共に、図4に示すように、水源85から供給された水を対面部材84の流出口840から流出させて隙間9に水層90を形成する。   Next, the X-axis direction feeding means 5 moves the chuck table 2 in the + X direction, and positions the wafer W to be cut immediately below the cutting blade 32. Then, the facing member 84 that has been retracted is moved directly above the wafer W and lowered to form a slight gap 9 between the device region W1 of the wafer W and the bottom surface of the facing member 84, and FIG. As shown in FIG. 4, the water supplied from the water source 85 flows out from the outlet 840 of the facing member 84 to form the water layer 90 in the gap 9.

水層90が形成された状態でチャックテーブル2を回転させると共に、切削ブレード32を高速回転させながら切削手段3を下降させて検出した切削位置に切削ブレード32を作用させて切削を行い、ウェーハWを1回転させることにより、面取り部W3を切り落として除去する。そうすると、ウェーハWの周縁が垂直面となる。   While the chuck table 2 is rotated with the water layer 90 formed, the cutting means 3 is lowered while the cutting blade 32 is rotated at a high speed, and the cutting blade 32 is applied to the detected cutting position to perform cutting. Is turned off to remove the chamfered portion W3. Then, the peripheral edge of the wafer W becomes a vertical surface.

切削中は、図3に示したデバイス領域W1が常に水層90によって覆われ、その水がウェーハWの中心部から外周側に向けて流れ出ているため、切削により生じた切削屑がデバイス領域W1に侵入することがない。したがって、デバイス領域W1を構成する個々のデバイスDに切削屑が付着することがなく、デバイスの品質や機能を低下させるのを防止することができる。   During the cutting, the device region W1 shown in FIG. 3 is always covered with the water layer 90, and the water flows out from the central portion of the wafer W toward the outer peripheral side. Never invade. Therefore, cutting waste does not adhere to each device D constituting the device region W1, and it is possible to prevent the quality and function of the device from being deteriorated.

対面部材84は、その半径がウェーハWの中心から切削位置までの長さよりも短くなるように形成されており、切削中に切削ブレード32が対面部材84に接触することはない。対面部材84がデバイス領域W1よりも大径に形成されていれば、水層90がデバイス領域W1を完全に覆うことができるが、対面部材84の半径は、デバイス領域W1の半径よりも若干短い程度でもよい。例えば、対面部材84の半径は、ウェーハWの中心から切削位置までの長さよりも2,3mm短い程度とすることが望ましい。   The facing member 84 is formed such that its radius is shorter than the length from the center of the wafer W to the cutting position, and the cutting blade 32 does not contact the facing member 84 during cutting. If the facing member 84 has a larger diameter than the device region W1, the water layer 90 can completely cover the device region W1, but the radius of the facing member 84 is slightly shorter than the radius of the device region W1. The degree is acceptable. For example, the radius of the facing member 84 is desirably about 2 to 3 mm shorter than the length from the center of the wafer W to the cutting position.

図5に示すように、チャックテーブル2には逃げ溝21が形成されており、切削中は、切削ブレード21の下端が逃げ溝21に収容され、切削ブレード32がウェーハWの表裏を貫通する。このとき、水層90からウェーハWの外周側に向けて流れ出る水は、切削ブレード32とウェーハWとの接触部に供給されるため、水層90から側方に流れ出た水が切削水としても機能する。したがって、切削水吐出用の専用のノズルは不要となる。   As shown in FIG. 5, a clearance groove 21 is formed in the chuck table 2, and during cutting, the lower end of the cutting blade 21 is accommodated in the clearance groove 21, and the cutting blade 32 penetrates the front and back of the wafer W. At this time, since the water flowing out from the water layer 90 toward the outer peripheral side of the wafer W is supplied to the contact portion between the cutting blade 32 and the wafer W, the water flowing out from the water layer 90 to the side is also used as the cutting water. Function. Therefore, a dedicated nozzle for discharging cutting water is not necessary.

なお、図6に示すように、切削ブレード32aの厚さが面取り部W3の幅を上回っている場合は、切削ブレード32aによって面取り部W3を削り取るように切削することもできる。   As shown in FIG. 6, when the thickness of the cutting blade 32a exceeds the width of the chamfered portion W3, the chamfered portion W3 can be cut by the cutting blade 32a.

ウェーハ面取り部除去装置の一例を示す斜視図である。It is a perspective view which shows an example of a wafer chamfer part removal apparatus. 水層形成手段の一部を略示的に示す断面図である。It is sectional drawing which shows a part of water layer formation means schematically. ウェーハの一例を示す斜視図である。It is a perspective view which shows an example of a wafer. ウェーハの面取り部を除去する状態を略示的に示す断面図である。It is sectional drawing which shows schematically the state which removes the chamfering part of a wafer. ウェーハの面取り部を除去する状態を拡大して示す断面図である。It is sectional drawing which expands and shows the state which removes the chamfer part of a wafer. ウェーハの面取り部を除去する状態の別の例を拡大して示す断面図である。It is sectional drawing which expands and shows another example of the state which removes the chamfer part of a wafer.

符号の説明Explanation of symbols

1:ウェーハ面取り部除去装置
2:チャックテーブル 20:吸引部 21:逃げ溝
3:切削手段
30:スピンドル 31:ハウジング 32、32a:切削ブレード
33:アライメント手段 330:撮像手段
4:回転駆動手段
5:X軸方向送り手段
50:ボールネジ 51:ガイドレール 52:モータ 53:スライド部
6:Y軸方向送り手段
60:ボールネジ 61:ガイドレール 62:モータ 63:スライド部
7:Z軸方向送り手段
70:ボールネジ 71:ガイドレール 72:モータ 73:支持部
8:水層形成手段
80:基部 81:軸部 82:アーム部 83:垂下部 84:対面部材 85:水源
86:バルブ 87:流路
9:隙間 90:水層
W:ウェーハ Wa:表面 Wb:裏面
W1:デバイス領域 W2:外周部 W3:面取り部
D:デバイス S:ストリート
1: Wafer chamfer removal device 2: Chuck table 20: Suction part 21: Escape groove 3: Cutting means 30: Spindle 31: Housing 32, 32a: Cutting blade 33: Alignment means 330: Imaging means 4: Rotation drive means 5: X-axis direction feeding means 50: Ball screw 51: Guide rail 52: Motor 53: Slide part 6: Y-axis direction feeding means 60: Ball screw 61: Guide rail 62: Motor 63: Slide part 7: Z-axis direction feeding means 70: Ball screw 71: Guide rail 72: Motor 73: Support part 8: Water layer forming means 80: Base part 81: Shaft part 82: Arm part 83: Hanging part 84: Facing member 85: Water source 86: Valve 87: Channel 9: Clearance 90 : Water layer W: Wafer Wa: Front surface Wb: Back surface W1: Device region W2: Peripheral portion W3: Chamfered portion D: Debye S: Street

Claims (2)

複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とが表面に形成され該外周余剰領域の周縁に表面から裏面にかけて円弧状の面取り部が形成されたウェーハの該面取り部を切削により除去するウェーハ面取り部除去装置であって、
ウェーハを保持し回転可能なチャックテーブルと、
回転可能な切削ブレードを備え該チャックテーブルに保持されたウェーハの外周余剰領域を切削する切削手段と、
少なくとも該デバイス領域に対面可能な対面部材を備え、該チャックテーブルに保持されたウェーハのデバイス領域と該対面部材との間に形成される隙間に水層を形成する水層形成手段と
を備えたウェーハ面取り部除去装置。
The chamfered portion of the wafer in which a device region in which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region are formed on the surface, and an arc-shaped chamfered portion is formed from the front surface to the rear surface at the periphery of the outer peripheral surplus region Is a wafer chamfered portion removing device that removes by cutting,
A chuck table capable of holding and rotating a wafer;
A cutting means that includes a rotatable cutting blade and that cuts the outer peripheral surplus area of the wafer held by the chuck table;
A facing member capable of facing at least the device region, and a water layer forming means for forming a water layer in a gap formed between the device region of the wafer held on the chuck table and the facing member. Wafer chamfer removal device.
複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とが表面に形成され該外周余剰領域の周縁に表面から裏面にかけて円弧状の面取り部が形成されたウェーハの該面取り部を切削により除去するウェーハ面取り部の除去方法であって、
ウェーハのデバイス領域に対して対面部材を対面させて該デバイス領域と該対面部材との間に隙間を形成し、該隙間に水層を形成した状態で、該ウェーハを回転させながら切削により該面取り部を除去する
ウェーハ面取り部の除去方法。
The chamfered portion of the wafer in which a device region in which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region are formed on the surface, and an arc-shaped chamfered portion is formed from the front surface to the rear surface at the periphery of the outer peripheral surplus region Is a method for removing a chamfered portion of a wafer that is removed by cutting,
With the facing member facing the device region of the wafer, a gap is formed between the device region and the facing member, and the chamfer is formed by cutting while rotating the wafer in a state where a water layer is formed in the gap. For removing the wafer chamfered portion.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012231057A (en) * 2011-04-27 2012-11-22 Disco Abrasive Syst Ltd Method for processing wafer
JP2013073943A (en) * 2011-09-26 2013-04-22 Canon Machinery Inc Substrate cutting apparatus
KR101548967B1 (en) * 2015-06-19 2015-09-02 주식회사 티에스시 Chamfering Device for Rubber Products
JP2015213996A (en) * 2014-05-12 2015-12-03 株式会社ディスコ Chuck table
CN108422048A (en) * 2018-05-29 2018-08-21 九江辅创知识产权运营有限公司 Beveler
DE102022201551A1 (en) 2021-02-22 2022-08-25 Disco Corporation PROCESSING DEVICE

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000006018A (en) * 1998-06-23 2000-01-11 Disco Abrasive Syst Ltd Grinding device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000006018A (en) * 1998-06-23 2000-01-11 Disco Abrasive Syst Ltd Grinding device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012231057A (en) * 2011-04-27 2012-11-22 Disco Abrasive Syst Ltd Method for processing wafer
JP2013073943A (en) * 2011-09-26 2013-04-22 Canon Machinery Inc Substrate cutting apparatus
JP2015213996A (en) * 2014-05-12 2015-12-03 株式会社ディスコ Chuck table
KR101548967B1 (en) * 2015-06-19 2015-09-02 주식회사 티에스시 Chamfering Device for Rubber Products
CN108422048A (en) * 2018-05-29 2018-08-21 九江辅创知识产权运营有限公司 Beveler
CN108422048B (en) * 2018-05-29 2019-07-05 九江辅创知识产权运营有限公司 Beveler
DE102022201551A1 (en) 2021-02-22 2022-08-25 Disco Corporation PROCESSING DEVICE
KR20220120459A (en) 2021-02-22 2022-08-30 가부시기가이샤 디스코 Processing apparatus
US11862505B2 (en) 2021-02-22 2024-01-02 Disco Corporation Processing apparatus

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