TW200802915A - Manufacturing method of integrated circuit - Google Patents

Manufacturing method of integrated circuit

Info

Publication number
TW200802915A
TW200802915A TW096114373A TW96114373A TW200802915A TW 200802915 A TW200802915 A TW 200802915A TW 096114373 A TW096114373 A TW 096114373A TW 96114373 A TW96114373 A TW 96114373A TW 200802915 A TW200802915 A TW 200802915A
Authority
TW
Taiwan
Prior art keywords
light receiving
receiving section
etching
manufacturing
section pad
Prior art date
Application number
TW096114373A
Other languages
English (en)
Other versions
TWI347014B (zh
Inventor
Tetsuya Yamada
Tsutomu Imai
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200802915A publication Critical patent/TW200802915A/zh
Application granted granted Critical
Publication of TWI347014B publication Critical patent/TWI347014B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
TW096114373A 2006-04-26 2007-04-24 Manufacturing method of integrated circuit TW200802915A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006122520A JP5283829B2 (ja) 2006-04-26 2006-04-26 集積回路製造方法

Publications (2)

Publication Number Publication Date
TW200802915A true TW200802915A (en) 2008-01-01
TWI347014B TWI347014B (zh) 2011-08-11

Family

ID=38648803

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114373A TW200802915A (en) 2006-04-26 2007-04-24 Manufacturing method of integrated circuit

Country Status (4)

Country Link
US (1) US7462567B2 (zh)
JP (1) JP5283829B2 (zh)
CN (1) CN100492613C (zh)
TW (1) TW200802915A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8018014B2 (en) * 2008-05-29 2011-09-13 Oki Semiconductor Co., Ltd. Semiconductor device
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
JP6024103B2 (ja) * 2011-06-30 2016-11-09 ソニー株式会社 撮像素子、撮像素子の駆動方法、撮像素子の製造方法、および電子機器
JP6007694B2 (ja) * 2012-09-14 2016-10-12 ソニー株式会社 固体撮像装置及び電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3506314B2 (ja) * 1998-07-28 2004-03-15 日本ビクター株式会社 集積化受光素子の製造方法
JP3625258B2 (ja) * 1999-07-06 2005-03-02 松下電器産業株式会社 受光素子およびその製造方法
JP3370298B2 (ja) * 1999-07-27 2003-01-27 シャープ株式会社 回路内蔵受光素子
JP3628936B2 (ja) * 2000-05-11 2005-03-16 日本テキサス・インスツルメンツ株式会社 フォトダイオードの製造方法
JP4208172B2 (ja) * 2000-10-31 2009-01-14 シャープ株式会社 フォトダイオードおよびそれを用いた回路内蔵受光素子
JP2004012803A (ja) * 2002-06-06 2004-01-15 Fujitsu Ltd 光伝送用プリント板ユニット及び実装方法
JP4338490B2 (ja) * 2003-09-29 2009-10-07 三洋電機株式会社 光半導体集積回路装置の製造方法
JP2005109047A (ja) * 2003-09-29 2005-04-21 Sanyo Electric Co Ltd 光半導体集積回路装置及びその製造方法
JP2005303258A (ja) * 2004-03-16 2005-10-27 Fujikura Ltd デバイス及びその製造方法
US7642711B2 (en) * 2004-07-06 2010-01-05 Fujifilm Corporation Functional layer having wiring connected to electrode and barrier metal between electrode and wiring
JP4641820B2 (ja) * 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP5283829B2 (ja) 2013-09-04
CN100492613C (zh) 2009-05-27
TWI347014B (zh) 2011-08-11
CN101064278A (zh) 2007-10-31
JP2007294760A (ja) 2007-11-08
US7462567B2 (en) 2008-12-09
US20070254400A1 (en) 2007-11-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees