TW200802871A - A semiconductor structure - Google Patents

A semiconductor structure

Info

Publication number
TW200802871A
TW200802871A TW096117558A TW96117558A TW200802871A TW 200802871 A TW200802871 A TW 200802871A TW 096117558 A TW096117558 A TW 096117558A TW 96117558 A TW96117558 A TW 96117558A TW 200802871 A TW200802871 A TW 200802871A
Authority
TW
Taiwan
Prior art keywords
region
hvnw
hvw
gate electrode
substrate
Prior art date
Application number
TW096117558A
Other languages
English (en)
Other versions
TWI357156B (en
Inventor
Yu-Chang Jong
Ruey-Hsin Liu
Yueh-Chiou Lin
Shun-Liang Hsu
Chi-Hsuen Chang
Te Yin Hsia
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200802871A publication Critical patent/TW200802871A/zh
Application granted granted Critical
Publication of TWI357156B publication Critical patent/TWI357156B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096117558A 2006-06-30 2007-05-17 A semiconductor structure TWI357156B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81767606P 2006-06-30 2006-06-30
US11/593,424 US7521741B2 (en) 2006-06-30 2006-11-06 Shielding structures for preventing leakages in high voltage MOS devices

Publications (2)

Publication Number Publication Date
TW200802871A true TW200802871A (en) 2008-01-01
TWI357156B TWI357156B (en) 2012-01-21

Family

ID=38875690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096117558A TWI357156B (en) 2006-06-30 2007-05-17 A semiconductor structure

Country Status (5)

Country Link
US (1) US7521741B2 (zh)
JP (1) JP2008016820A (zh)
KR (1) KR100888425B1 (zh)
CN (1) CN100517756C (zh)
TW (1) TWI357156B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5057850B2 (ja) * 2007-06-04 2012-10-24 東芝メモリシステムズ株式会社 半導体装置
US8258584B2 (en) * 2010-07-29 2012-09-04 Taiwan Semiconductor Manufacturing, Inc. Offset gate semiconductor device
CN102169869B (zh) * 2011-02-01 2012-10-10 北京大学 用于检测mos器件晶向相关性的可靠性测试结构及方法
US9209098B2 (en) * 2011-05-19 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. HVMOS reliability evaluation using bulk resistances as indices
US9159802B2 (en) 2012-05-14 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with mask layers and methods for forming the same
JP2015056472A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
CN104659094A (zh) * 2013-11-22 2015-05-27 立锜科技股份有限公司 横向双扩散金属氧化物半导体元件及其制造方法
US9377502B2 (en) * 2013-12-19 2016-06-28 Infineon Technologies Ag Testing of semiconductor devices and devices, and designs thereof
CN105655328B (zh) * 2014-11-13 2018-08-24 旺宏电子股份有限公司 有源元件及应用其的半导体元件
WO2016170706A1 (ja) * 2015-04-22 2016-10-27 三菱電機株式会社 半導体装置および半導体装置の製造方法
US10438540B2 (en) * 2017-06-20 2019-10-08 Apple Inc. Control circuitry for electronic device displays
US11068633B2 (en) 2018-08-31 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fault diagnostics
TWI698017B (zh) 2019-09-17 2020-07-01 瑞昱半導體股份有限公司 高壓半導體裝置以及其製作方法
US20230387103A1 (en) * 2022-05-27 2023-11-30 Vanguard International Semiconductor Corporation Semiconductor structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492449A (ja) * 1990-08-07 1992-03-25 Seiko Epson Corp 半導体装置
KR930011462B1 (ko) * 1990-11-23 1993-12-08 현대전자산업 주식회사 다층배선의 단차를 완화시키는 방법
JPH065697A (ja) * 1992-06-22 1994-01-14 Nec Corp 半導体装置
JPH06120496A (ja) * 1992-10-05 1994-04-28 Toshiba Corp Ｍｏｓ型高耐圧トランジスタ
US6201275B1 (en) * 1995-06-30 2001-03-13 Nippon Steel Corporation Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same
US5861698A (en) * 1997-03-17 1999-01-19 Westinghouse Electric Corporation Generator rotor with ring key that reduces tooth top stress
JPH113934A (ja) 1997-06-11 1999-01-06 Toshiba Corp 半導体集積回路
US6020616A (en) * 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
JP2000133725A (ja) 1998-10-26 2000-05-12 Mitsubishi Electric Corp 半導体記憶装置
US6281554B1 (en) * 2000-03-20 2001-08-28 United Microelectronics Corp. Electrostatic discharge protection circuit
JP2004235475A (ja) * 2003-01-30 2004-08-19 Nec Electronics Corp 半導体装置
JP2005191202A (ja) * 2003-12-25 2005-07-14 Seiko Epson Corp 半導体装置
JP2006059978A (ja) * 2004-08-19 2006-03-02 Toshiba Corp 半導体装置
US7385252B2 (en) * 2004-09-27 2008-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection for high voltage applications
US7301185B2 (en) * 2004-11-29 2007-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage
JP2006278633A (ja) * 2005-03-29 2006-10-12 Oki Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20080003213A (ko) 2008-01-07
CN101097958A (zh) 2008-01-02
US20080001189A1 (en) 2008-01-03
CN100517756C (zh) 2009-07-22
TWI357156B (en) 2012-01-21
KR100888425B1 (ko) 2009-03-11
JP2008016820A (ja) 2008-01-24
US7521741B2 (en) 2009-04-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees