TW200802732A - Nonvolatile semiconductor memory device and manufacturing method thereof - Google Patents

Nonvolatile semiconductor memory device and manufacturing method thereof

Info

Publication number
TW200802732A
TW200802732A TW096109547A TW96109547A TW200802732A TW 200802732 A TW200802732 A TW 200802732A TW 096109547 A TW096109547 A TW 096109547A TW 96109547 A TW96109547 A TW 96109547A TW 200802732 A TW200802732 A TW 200802732A
Authority
TW
Taiwan
Prior art keywords
region
impurity region
memory device
semiconductor memory
channel formation
Prior art date
Application number
TW096109547A
Other languages
English (en)
Other versions
TWI429028B (zh
Inventor
Tamae Takano
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200802732A publication Critical patent/TW200802732A/zh
Application granted granted Critical
Publication of TWI429028B publication Critical patent/TWI429028B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW096109547A 2006-03-31 2007-03-20 非揮發性半導體記憶體裝置及其製造方法 TWI429028B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006101076 2006-03-31

Publications (2)

Publication Number Publication Date
TW200802732A true TW200802732A (en) 2008-01-01
TWI429028B TWI429028B (zh) 2014-03-01

Family

ID=38557512

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109547A TWI429028B (zh) 2006-03-31 2007-03-20 非揮發性半導體記憶體裝置及其製造方法

Country Status (4)

Country Link
US (4) US7573090B2 (zh)
KR (1) KR101406766B1 (zh)
CN (1) CN101047208B (zh)
TW (1) TWI429028B (zh)

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US7598526B2 (en) 2006-03-08 2009-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7692973B2 (en) * 2006-03-31 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
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TWI431726B (zh) * 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
US8895388B2 (en) * 2006-07-21 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment
US7994564B2 (en) * 2006-11-20 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory cells formed in back-end-of line processes
CN102522430B (zh) * 2007-03-23 2014-10-22 株式会社半导体能源研究所 半导体装置及其制造方法
KR100875432B1 (ko) * 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
US8420456B2 (en) * 2007-06-12 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing for thin film transistor
KR100889626B1 (ko) * 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) * 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) * 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) * 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) * 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
TWI382530B (zh) * 2009-04-03 2013-01-11 Acer Inc A method and device for utilizing thin film transistor as nonvolatile memory
JP5434365B2 (ja) * 2009-08-24 2014-03-05 ソニー株式会社 半導体装置及びその製造方法
KR101819197B1 (ko) 2010-02-05 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9252324B2 (en) * 2013-05-30 2016-02-02 Globalfoundries Inc Heterojunction light emitting diode
US11705514B2 (en) * 2015-07-29 2023-07-18 Mediatek Inc. MOS transistor structure with hump-free effect
JP2018142654A (ja) * 2017-02-28 2018-09-13 東芝メモリ株式会社 半導体装置及びその製造方法

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TWI552356B (zh) * 2008-11-07 2016-10-01 半導體能源研究所股份有限公司 半導體裝置
US10158005B2 (en) 2008-11-07 2018-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
CN101047208A (zh) 2007-10-03
US8310000B2 (en) 2012-11-13
US7858474B2 (en) 2010-12-28
US7573090B2 (en) 2009-08-11
US20090258479A1 (en) 2009-10-15
KR20070098714A (ko) 2007-10-05
CN101047208B (zh) 2012-01-11
US20120037978A1 (en) 2012-02-16
US20110095354A1 (en) 2011-04-28
TWI429028B (zh) 2014-03-01
US8049266B2 (en) 2011-11-01
US20070228420A1 (en) 2007-10-04
KR101406766B1 (ko) 2014-06-12

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MM4A Annulment or lapse of patent due to non-payment of fees