TW200746438A - An SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same - Google Patents

An SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same

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Publication number
TW200746438A
TW200746438A TW096114200A TW96114200A TW200746438A TW 200746438 A TW200746438 A TW 200746438A TW 096114200 A TW096114200 A TW 096114200A TW 96114200 A TW96114200 A TW 96114200A TW 200746438 A TW200746438 A TW 200746438A
Authority
TW
Taiwan
Prior art keywords
floating body
forming
same
body effect
soi transistor
Prior art date
Application number
TW096114200A
Other languages
English (en)
Other versions
TWI485856B (zh
Inventor
Andy Wei
Thorsten Kammler
Jan Hoentschel
Manfred Horstmann
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200746438A publication Critical patent/TW200746438A/zh
Application granted granted Critical
Publication of TWI485856B publication Critical patent/TWI485856B/zh

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW096114200A 2006-04-28 2007-04-23 具有埋置應變層和減少之浮體效應的ｓｏｉ電晶體以及用於形成該ｓｏｉ電晶體之方法 TWI485856B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006019937A DE102006019937B4 (de) 2006-04-28 2006-04-28 Verfahren zur Herstellung eines SOI-Transistors mit eingebetteter Verformungsschicht und einem reduzierten Effekt des potentialfreien Körpers
US11/563,986 US7829421B2 (en) 2006-04-28 2006-11-28 SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same

Publications (2)

Publication Number Publication Date
TW200746438A true TW200746438A (en) 2007-12-16
TWI485856B TWI485856B (zh) 2015-05-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114200A TWI485856B (zh) 2006-04-28 2007-04-23 具有埋置應變層和減少之浮體效應的ｓｏｉ電晶體以及用於形成該ｓｏｉ電晶體之方法

Country Status (8)

Country Link
US (1) US7829421B2 (zh)
JP (1) JP5204763B2 (zh)
KR (1) KR101494859B1 (zh)
CN (1) CN101432859B (zh)
DE (1) DE102006019937B4 (zh)
GB (1) GB2451369B (zh)
TW (1) TWI485856B (zh)
WO (1) WO2007130241A1 (zh)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI582832B (zh) * 2011-04-21 2017-05-11 聯華電子股份有限公司 磊晶層的製作方法

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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