TW200741982A - Semiconductor device having a fin channel transistor - Google Patents
Semiconductor device having a fin channel transistorInfo
- Publication number
- TW200741982A TW200741982A TW095142213A TW95142213A TW200741982A TW 200741982 A TW200741982 A TW 200741982A TW 095142213 A TW095142213 A TW 095142213A TW 95142213 A TW95142213 A TW 95142213A TW 200741982 A TW200741982 A TW 200741982A
- Authority
- TW
- Taiwan
- Prior art keywords
- fin channel
- semiconductor device
- region
- protruded
- channel transistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000002955 isolation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/056—Making the transistor the transistor being a FinFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060038826A KR100764360B1 (ko) | 2006-04-28 | 2006-04-28 | 반도체 소자 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200741982A true TW200741982A (en) | 2007-11-01 |
TWI336926B TWI336926B (en) | 2011-02-01 |
Family
ID=38647535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095142213A TWI336926B (en) | 2006-04-28 | 2006-11-15 | Semiconductor device having a fin channel transistor |
Country Status (4)
Country | Link |
---|---|
US (2) | US20070252198A1 (zh) |
KR (1) | KR100764360B1 (zh) |
CN (1) | CN100536141C (zh) |
TW (1) | TWI336926B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9362406B2 (en) | 2012-12-12 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company Limited | Faceted finFET |
US9580776B2 (en) | 2011-09-30 | 2017-02-28 | Intel Corporation | Tungsten gates for non-planar transistors |
TWI585980B (zh) * | 2011-09-30 | 2017-06-01 | Intel Corp | 用於非平面電晶體之鎢閘極技術(二) |
US9853156B2 (en) | 2011-10-01 | 2017-12-26 | Intel Corporation | Source/drain contacts for non-planar transistors |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7517764B2 (en) * | 2006-06-29 | 2009-04-14 | International Business Machines Corporation | Bulk FinFET device |
KR100886643B1 (ko) * | 2007-07-02 | 2009-03-04 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
KR100944356B1 (ko) | 2008-03-13 | 2010-03-02 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
JP2009224520A (ja) * | 2008-03-14 | 2009-10-01 | Elpida Memory Inc | 半導体装置及び半導体装置の製造方法 |
KR100968151B1 (ko) * | 2008-05-06 | 2010-07-06 | 주식회사 하이닉스반도체 | 핀 구조의 채널을 갖는 반도체 소자 및 그 제조방법 |
US8772860B2 (en) | 2011-05-26 | 2014-07-08 | United Microelectronics Corp. | FINFET transistor structure and method for making the same |
CN102820334B (zh) * | 2011-06-08 | 2017-04-12 | 联华电子股份有限公司 | 鳍式场效晶体管结构与形成鳍式场效晶体管结构的方法 |
CN102856205B (zh) * | 2011-06-30 | 2017-02-01 | 中国科学院微电子研究所 | 多栅器件的形成方法 |
FR3002813B1 (fr) | 2013-03-01 | 2016-08-05 | St Microelectronics Sa | Procede de fabrication d'un transistor mos a ailette |
EP3050091B1 (en) * | 2013-09-27 | 2019-04-10 | Intel Corporation | Ge and iii-v channel semiconductor devices having maximized compliance and free surface relaxation |
WO2017052587A1 (en) | 2015-09-25 | 2017-03-30 | Intel Corporation | Passivation of transistor channel region interfaces |
KR102492733B1 (ko) | 2017-09-29 | 2023-01-27 | 삼성디스플레이 주식회사 | 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법 |
US11735628B2 (en) * | 2021-03-01 | 2023-08-22 | International Business Machines Corporation | Nanosheet metal-oxide semiconductor field effect transistor with asymmetric threshold voltage |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100267418B1 (ko) * | 1995-12-28 | 2000-10-16 | 엔도 마코토 | 플라스마처리방법및플라스마처리장치 |
US6784076B2 (en) * | 2002-04-08 | 2004-08-31 | Micron Technology, Inc. | Process for making a silicon-on-insulator ledge by implanting ions from silicon source |
US6794303B2 (en) * | 2002-07-18 | 2004-09-21 | Mosel Vitelic, Inc. | Two stage etching of silicon nitride to form a nitride spacer |
US6787854B1 (en) * | 2003-03-12 | 2004-09-07 | Advanced Micro Devices, Inc. | Method for forming a fin in a finFET device |
US7335945B2 (en) * | 2003-12-26 | 2008-02-26 | Electronics And Telecommunications Research Institute | Multi-gate MOS transistor and method of manufacturing the same |
US7045432B2 (en) * | 2004-02-04 | 2006-05-16 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
US7060539B2 (en) * | 2004-03-01 | 2006-06-13 | International Business Machines Corporation | Method of manufacture of FinFET devices with T-shaped fins and devices manufactured thereby |
KR100584776B1 (ko) * | 2004-03-05 | 2006-05-29 | 삼성전자주식회사 | 반도체 장치의 액티브 구조물 형성 방법, 소자 분리 방법및 트랜지스터 형성 방법 |
KR100560815B1 (ko) * | 2004-03-16 | 2006-03-13 | 삼성전자주식회사 | 이형 반도체 기판 및 그 형성 방법 |
KR100555569B1 (ko) * | 2004-08-06 | 2006-03-03 | 삼성전자주식회사 | 절연막에 의해 제한된 채널영역을 갖는 반도체 소자 및 그제조방법 |
KR100612718B1 (ko) * | 2004-12-10 | 2006-08-17 | 경북대학교 산학협력단 | 안장형 플래시 메모리 소자 및 제조방법 |
US7384838B2 (en) * | 2005-09-13 | 2008-06-10 | International Business Machines Corporation | Semiconductor FinFET structures with encapsulated gate electrodes and methods for forming such semiconductor FinFET structures |
-
2006
- 2006-04-28 KR KR1020060038826A patent/KR100764360B1/ko not_active IP Right Cessation
- 2006-09-29 US US11/529,355 patent/US20070252198A1/en not_active Abandoned
- 2006-11-15 TW TW095142213A patent/TWI336926B/zh not_active IP Right Cessation
- 2006-11-23 CN CNB2006101459142A patent/CN100536141C/zh not_active Expired - Fee Related
-
2009
- 2009-09-29 US US12/569,802 patent/US20100022057A1/en not_active Abandoned
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9580776B2 (en) | 2011-09-30 | 2017-02-28 | Intel Corporation | Tungsten gates for non-planar transistors |
US9637810B2 (en) | 2011-09-30 | 2017-05-02 | Intel Corporation | Tungsten gates for non-planar transistors |
TWI585980B (zh) * | 2011-09-30 | 2017-06-01 | Intel Corp | 用於非平面電晶體之鎢閘極技術(二) |
TWI595666B (zh) * | 2011-09-30 | 2017-08-11 | Intel Corp | 用於非平面電晶體之鎢閘極技術(三) |
US9812546B2 (en) | 2011-09-30 | 2017-11-07 | Intel Corporation | Tungsten gates for non-planar transistors |
US10020375B2 (en) | 2011-09-30 | 2018-07-10 | Intel Corporation | Tungsten gates for non-planar transistors |
US9853156B2 (en) | 2011-10-01 | 2017-12-26 | Intel Corporation | Source/drain contacts for non-planar transistors |
US10283640B2 (en) | 2011-10-01 | 2019-05-07 | Intel Corporation | Source/drain contacts for non-planar transistors |
US10770591B2 (en) | 2011-10-01 | 2020-09-08 | Intel Corporation | Source/drain contacts for non-planar transistors |
US9362406B2 (en) | 2012-12-12 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company Limited | Faceted finFET |
US9601629B2 (en) | 2012-12-12 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company Limited | Faceted finFET |
TWI587516B (zh) * | 2012-12-12 | 2017-06-11 | 台灣積體電路製造股份有限公司 | 半導體裝置及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100536141C (zh) | 2009-09-02 |
US20070252198A1 (en) | 2007-11-01 |
TWI336926B (en) | 2011-02-01 |
CN101064312A (zh) | 2007-10-31 |
US20100022057A1 (en) | 2010-01-28 |
KR100764360B1 (ko) | 2007-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |