TW200741824A - A gettering method and a wafer using the same - Google Patents

A gettering method and a wafer using the same

Info

Publication number
TW200741824A
TW200741824A TW096109425A TW96109425A TW200741824A TW 200741824 A TW200741824 A TW 200741824A TW 096109425 A TW096109425 A TW 096109425A TW 96109425 A TW96109425 A TW 96109425A TW 200741824 A TW200741824 A TW 200741824A
Authority
TW
Taiwan
Prior art keywords
wafer
layer
stack
chip
thermal oxide
Prior art date
Application number
TW096109425A
Other languages
English (en)
Inventor
Jari Makinen
Original Assignee
Okmetic Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okmetic Oyj filed Critical Okmetic Oyj
Publication of TW200741824A publication Critical patent/TW200741824A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
TW096109425A 2006-03-27 2007-03-20 A gettering method and a wafer using the same TW200741824A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/389,087 US7923353B2 (en) 2006-03-27 2006-03-27 Gettering method and a wafer using the same

Publications (1)

Publication Number Publication Date
TW200741824A true TW200741824A (en) 2007-11-01

Family

ID=38162308

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109425A TW200741824A (en) 2006-03-27 2007-03-20 A gettering method and a wafer using the same

Country Status (8)

Country Link
US (1) US7923353B2 (zh)
EP (1) EP1840951A3 (zh)
JP (1) JP2007266607A (zh)
KR (1) KR20070096942A (zh)
CN (1) CN101047128A (zh)
CA (1) CA2582632A1 (zh)
SG (2) SG155984A1 (zh)
TW (1) TW200741824A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108766873B (zh) * 2011-01-25 2023-04-07 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
US9527721B2 (en) * 2015-05-15 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Movement microelectromechanical systems (MEMS) package

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132770A (en) * 1988-08-25 1992-07-21 Kabushiki Kaisha Toshiba Semiconductor device having improved multi-layered substrate structure
US5417111A (en) * 1990-08-17 1995-05-23 Analog Devices, Inc. Monolithic chip containing integrated circuitry and suspended microstructure
JPH04127437A (ja) * 1990-09-18 1992-04-28 Fujitsu Ltd 半導体基板
JPH04266047A (ja) * 1991-02-20 1992-09-22 Fujitsu Ltd 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置
US5240876A (en) * 1991-02-22 1993-08-31 Harris Corporation Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
JP3452122B2 (ja) * 1998-04-22 2003-09-29 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
JP3452123B2 (ja) * 1998-04-22 2003-09-29 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
US6890835B1 (en) * 2000-10-19 2005-05-10 International Business Machines Corporation Layer transfer of low defect SiGe using an etch-back process
CN1894796B (zh) * 2003-12-15 2010-09-01 株式会社半导体能源研究所 薄膜集成电路器件的制造方法和非接触薄膜集成电路器件及其制造方法
US7772523B2 (en) * 2004-07-30 2010-08-10 Semiconductor Energy Laboratory Co., Ltd Laser irradiation apparatus and laser irradiation method

Also Published As

Publication number Publication date
KR20070096942A (ko) 2007-10-02
CN101047128A (zh) 2007-10-03
SG136095A1 (en) 2007-10-29
JP2007266607A (ja) 2007-10-11
SG155984A1 (en) 2009-10-29
EP1840951A2 (en) 2007-10-03
US7923353B2 (en) 2011-04-12
CA2582632A1 (en) 2007-09-27
US20070224782A1 (en) 2007-09-27
EP1840951A3 (en) 2009-07-08

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