TW200741361A - Photolithographic systems and methods for producing sub-diffraction-limited features - Google Patents
Photolithographic systems and methods for producing sub-diffraction-limited featuresInfo
- Publication number
- TW200741361A TW200741361A TW096100943A TW96100943A TW200741361A TW 200741361 A TW200741361 A TW 200741361A TW 096100943 A TW096100943 A TW 096100943A TW 96100943 A TW96100943 A TW 96100943A TW 200741361 A TW200741361 A TW 200741361A
- Authority
- TW
- Taiwan
- Prior art keywords
- superlens
- methods
- features
- template
- diffraction
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/329,755 US7538858B2 (en) | 2006-01-11 | 2006-01-11 | Photolithographic systems and methods for producing sub-diffraction-limited features |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200741361A true TW200741361A (en) | 2007-11-01 |
TWI351585B TWI351585B (en) | 2011-11-01 |
Family
ID=38169214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096100943A TWI351585B (en) | 2006-01-11 | 2007-01-10 | Photolithographic systems and methods for producin |
Country Status (7)
Country | Link |
---|---|
US (2) | US7538858B2 (zh) |
EP (1) | EP1971899B1 (zh) |
JP (1) | JP5029920B2 (zh) |
KR (1) | KR20090006059A (zh) |
CN (1) | CN101371193B (zh) |
TW (1) | TWI351585B (zh) |
WO (1) | WO2007081813A2 (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7538858B2 (en) * | 2006-01-11 | 2009-05-26 | Micron Technology, Inc. | Photolithographic systems and methods for producing sub-diffraction-limited features |
US7474397B2 (en) * | 2006-04-28 | 2009-01-06 | Hewlett-Packard Development Company, L.P. | Raman and hyper-Raman excitation using superlensing |
DE102008002575A1 (de) | 2007-08-20 | 2009-02-26 | Carl Zeiss Smt Ag | Mikrolithographisches Projektionsbelichtungsverfahren |
US7790525B2 (en) * | 2007-10-18 | 2010-09-07 | Texas Instruments Incorporated | Method of achieving dense-pitch interconnect patterning in integrated circuits |
US7983135B2 (en) * | 2007-10-30 | 2011-07-19 | Hewlett-Packard Development Company, L.P. | Optical system with superlens |
CN100587606C (zh) * | 2008-01-11 | 2010-02-03 | 中国科学院光电技术研究所 | 一种逆向照明接近接触纳米光刻装置 |
US20100033701A1 (en) * | 2008-08-08 | 2010-02-11 | Hyesog Lee | Superlens and lithography systems and methods using same |
JP4645721B2 (ja) * | 2008-10-02 | 2011-03-09 | ソニー株式会社 | 原盤製造方法、光ディスク製造方法 |
ES2793953T3 (es) | 2009-07-29 | 2020-11-17 | Icu Medical Inc | Procedimientos de transferencia de fluidos |
US20110188032A1 (en) * | 2010-02-04 | 2011-08-04 | Ravi Verma | Far-field superlensing |
JP5652887B2 (ja) * | 2010-03-02 | 2015-01-14 | 国立大学法人北海道大学 | フォトレジストパターンの作製方法 |
KR20120081658A (ko) | 2010-12-16 | 2012-07-20 | 삼성전자주식회사 | 수퍼 렌즈를 포함하는 포토마스크 및 그 제조 방법 |
CN102096123B (zh) * | 2010-12-22 | 2012-08-08 | 中国科学院光电技术研究所 | 一种制备平面缩放倍率超分辨成像透镜的方法 |
KR101322967B1 (ko) * | 2011-05-20 | 2013-10-29 | 연세대학교 산학협력단 | 접촉형 임프린팅 시스템, 접촉형 임프린팅 방법 및 접촉형 임프린팅 시스템용 스탬프 제조방법 |
US20130208254A1 (en) * | 2011-08-17 | 2013-08-15 | Agency For Science, Technology And Research | Nano-photolithographic superlens device and method for fabricating same |
KR101875771B1 (ko) * | 2011-12-02 | 2018-07-09 | 삼성디스플레이 주식회사 | 노광용 마스크, 그 제조 방법 및 그 마스크를 이용한 기판의 제조 방법 |
JP6307440B2 (ja) | 2011-12-22 | 2018-04-04 | アイシーユー・メディカル・インコーポレーテッド | 流体移送デバイスおよび使用方法 |
WO2013158543A1 (en) * | 2012-04-17 | 2013-10-24 | The Regents Of The University Of Michigan | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography |
KR102009347B1 (ko) | 2012-11-06 | 2019-10-24 | 삼성디스플레이 주식회사 | 노광용 포토마스크 및 이를 이용한 패턴 형성 방법 |
CN103592703B (zh) * | 2013-11-15 | 2016-01-20 | 哈尔滨工业大学深圳研究生院 | 一种低损耗平面超透镜及其制作方法 |
AU2014353184B2 (en) | 2013-11-25 | 2017-08-17 | Icu Medical, Inc. | Methods and system for filling IV bags with therapeutic fluid |
KR101501449B1 (ko) * | 2014-04-16 | 2015-03-12 | 연세대학교 산학협력단 | 금속 나노 입자의 국소 표면 플라즈몬 공명을 이용한 패터닝 장치 및 이를 이용한 패턴 형성방법 |
GB2525862A (en) * | 2014-05-06 | 2015-11-11 | Univ Bedfordshire | Lens array and imaging device |
KR102252049B1 (ko) | 2014-08-04 | 2021-05-18 | 삼성디스플레이 주식회사 | 노광용 마스크, 이의 제조 방법 및 이를 이용한 기판의 제조 방법 |
WO2017096072A1 (en) | 2015-12-04 | 2017-06-08 | Icu Medical, Inc. | Systems methods and components for transferring medical fluids |
KR20170137364A (ko) * | 2016-06-03 | 2017-12-13 | 삼성전자주식회사 | 전자기파 집속장치 및 이를 포함하는 광학장치 |
US10875247B2 (en) | 2016-07-15 | 2020-12-29 | Lawrence Livermore National Securitv. LLC | Multi-beam resin curing system and method for whole-volume additive manufacturing |
USD851745S1 (en) | 2016-07-19 | 2019-06-18 | Icu Medical, Inc. | Medical fluid transfer system |
WO2018022640A1 (en) | 2016-07-25 | 2018-02-01 | Icu Medical, Inc. | Systems, methods, and components for trapping air bubbles in medical fluid transfer modules and systems |
CN107255885B (zh) * | 2017-08-16 | 2020-02-21 | 京东方科技集团股份有限公司 | 显示面板及其制造方法 |
CN109901362B (zh) | 2017-12-11 | 2022-04-19 | 中国科学院光电技术研究所 | 二次成像光学光刻方法和设备 |
CN109343162A (zh) * | 2018-11-29 | 2019-02-15 | 暨南大学 | 基于超透镜的激光直写装置及其激光直写方法 |
CN113939726A (zh) * | 2019-06-12 | 2022-01-14 | ams有限公司 | 颗粒物传感器 |
KR200494267Y1 (ko) | 2020-03-05 | 2021-09-06 | 전다원 | 기체에서 열의 이동을 실험하기 위한 안전학습교구 |
US11590057B2 (en) | 2020-04-03 | 2023-02-28 | Icu Medical, Inc. | Systems, methods, and components for transferring medical fluids |
Family Cites Families (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3839108A (en) | 1970-07-22 | 1974-10-01 | Us Navy | Method of forming a precision pattern of apertures in a plate |
US4234362A (en) | 1978-11-03 | 1980-11-18 | International Business Machines Corporation | Method for forming an insulator between layers of conductive material |
US4508579A (en) | 1981-03-30 | 1985-04-02 | International Business Machines Corporation | Lateral device structures using self-aligned fabrication techniques |
JPS5852820A (ja) * | 1981-09-24 | 1983-03-29 | Nec Corp | 半導体装置の製造方法 |
US4432132A (en) | 1981-12-07 | 1984-02-21 | Bell Telephone Laboratories, Incorporated | Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features |
US4419809A (en) | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Fabrication process of sub-micrometer channel length MOSFETs |
DE3242113A1 (de) | 1982-11-13 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper |
US4648937A (en) | 1985-10-30 | 1987-03-10 | International Business Machines Corporation | Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer |
GB8528967D0 (en) | 1985-11-25 | 1986-01-02 | Plessey Co Plc | Semiconductor device manufacture |
US5514885A (en) | 1986-10-09 | 1996-05-07 | Myrick; James J. | SOI methods and apparatus |
JPS649618A (en) * | 1987-07-02 | 1989-01-12 | Matsushita Electric Ind Co Ltd | Pattern formation |
US4838991A (en) | 1987-10-30 | 1989-06-13 | International Business Machines Corporation | Process for defining organic sidewall structures |
US4776922A (en) | 1987-10-30 | 1988-10-11 | International Business Machines Corporation | Formation of variable-width sidewall structures |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
IT1243919B (it) | 1990-11-20 | 1994-06-28 | Cons Ric Microelettronica | Procedimento per l'ottenimento di solchi submicrometrici planarizzati in circuiti integrati realizzati con tecnologia ulsi |
JPH04305917A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
US5263073A (en) | 1991-12-20 | 1993-11-16 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Scanning systems for high resolution E-beam and X-ray lithography |
JPH05343370A (ja) | 1992-06-10 | 1993-12-24 | Toshiba Corp | 微細パタ−ンの形成方法 |
US5330879A (en) | 1992-07-16 | 1994-07-19 | Micron Technology, Inc. | Method for fabrication of close-tolerance lines and sharp emission tips on a semiconductor wafer |
US6042998A (en) | 1993-09-30 | 2000-03-28 | The University Of New Mexico | Method and apparatus for extending spatial frequencies in photolithography images |
JPH0855920A (ja) | 1994-08-15 | 1996-02-27 | Toshiba Corp | 半導体装置の製造方法 |
JPH0855908A (ja) | 1994-08-17 | 1996-02-27 | Toshiba Corp | 半導体装置 |
JP3164026B2 (ja) | 1996-08-21 | 2001-05-08 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH113534A (ja) * | 1997-04-14 | 1999-01-06 | Toray Ind Inc | 光記録装置および光記録媒体 |
US6063688A (en) | 1997-09-29 | 2000-05-16 | Intel Corporation | Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition |
US6291334B1 (en) | 1997-12-19 | 2001-09-18 | Applied Materials, Inc. | Etch stop layer for dual damascene process |
US6004862A (en) | 1998-01-20 | 1999-12-21 | Advanced Micro Devices, Inc. | Core array and periphery isolation technique |
JP4613356B2 (ja) * | 1998-03-03 | 2011-01-19 | 独立行政法人産業技術総合研究所 | 光記録媒体、光記録方法、光信号再生方法、光記録装置及び光信号再生装置 |
US6271957B1 (en) | 1998-05-29 | 2001-08-07 | Affymetrix, Inc. | Methods involving direct write optical lithography |
US6245662B1 (en) | 1998-07-23 | 2001-06-12 | Applied Materials, Inc. | Method of producing an interconnect structure for an integrated circuit |
US6071789A (en) | 1998-11-10 | 2000-06-06 | Vanguard International Semiconductor Corporation | Method for simultaneously fabricating a DRAM capacitor and metal interconnections |
JP2000229479A (ja) * | 1998-12-09 | 2000-08-22 | Tdk Corp | 光記録媒体 |
US6261431B1 (en) * | 1998-12-28 | 2001-07-17 | Affymetrix, Inc. | Process for microfabrication of an integrated PCR-CE device and products produced by the same |
US6211044B1 (en) | 1999-04-12 | 2001-04-03 | Advanced Micro Devices | Process for fabricating a semiconductor device component using a selective silicidation reaction |
JP2001077196A (ja) | 1999-09-08 | 2001-03-23 | Sony Corp | 半導体装置の製造方法 |
US6362057B1 (en) | 1999-10-26 | 2002-03-26 | Motorola, Inc. | Method for forming a semiconductor device |
US6539156B1 (en) | 1999-11-02 | 2003-03-25 | Georgia Tech Research Corporation | Apparatus and method of optical transfer and control in plasmon supporting metal nanostructures |
US6582891B1 (en) | 1999-12-02 | 2003-06-24 | Axcelis Technologies, Inc. | Process for reducing edge roughness in patterned photoresist |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6834027B1 (en) | 2000-02-28 | 2004-12-21 | Nec Laboratories America, Inc. | Surface plasmon-enhanced read/write heads for optical data storage media |
US6297554B1 (en) | 2000-03-10 | 2001-10-02 | United Microelectronics Corp. | Dual damascene interconnect structure with reduced parasitic capacitance |
US6423474B1 (en) | 2000-03-21 | 2002-07-23 | Micron Technology, Inc. | Use of DARC and BARC in flash memory processing |
US6632741B1 (en) | 2000-07-19 | 2003-10-14 | International Business Machines Corporation | Self-trimming method on looped patterns |
US6455372B1 (en) | 2000-08-14 | 2002-09-24 | Micron Technology, Inc. | Nucleation for improved flash erase characteristics |
US6348380B1 (en) | 2000-08-25 | 2002-02-19 | Micron Technology, Inc. | Use of dilute steam ambient for improvement of flash devices |
SE517275C2 (sv) | 2000-09-20 | 2002-05-21 | Obducat Ab | Sätt vid våtetsning av ett substrat |
JP2002117575A (ja) * | 2000-10-06 | 2002-04-19 | Pioneer Electronic Corp | 近接場光を用いた超解像層構造を有する光記録媒体 |
US6818907B2 (en) | 2000-10-17 | 2004-11-16 | The President And Fellows Of Harvard College | Surface plasmon enhanced illumination system |
US6473237B2 (en) | 2000-11-14 | 2002-10-29 | Ball Semiconductor, Inc. | Point array maskless lithography |
US6926843B2 (en) | 2000-11-30 | 2005-08-09 | International Business Machines Corporation | Etching of hard masks |
DE60228943D1 (de) | 2001-04-10 | 2008-10-30 | Harvard College | Mikrolinse zur projektionslithographie und ihr herstellungsverfahren |
US6740594B2 (en) | 2001-05-31 | 2004-05-25 | Infineon Technologies Ag | Method for removing carbon-containing polysilane from a semiconductor without stripping |
US6998219B2 (en) | 2001-06-27 | 2006-02-14 | University Of South Florida | Maskless photolithography for etching and deposition |
US6522584B1 (en) | 2001-08-02 | 2003-02-18 | Micron Technology, Inc. | Programming methods for multi-level flash EEPROMs |
US6744094B2 (en) | 2001-08-24 | 2004-06-01 | Micron Technology Inc. | Floating gate transistor with horizontal gate layers stacked next to vertical body |
TW497138B (en) | 2001-08-28 | 2002-08-01 | Winbond Electronics Corp | Method for improving consistency of critical dimension |
WO2003019245A2 (en) | 2001-08-31 | 2003-03-06 | Universite Louis Pasteur | Optical transmission apparatus with directionality and divergence control |
DE10142590A1 (de) | 2001-08-31 | 2003-04-03 | Infineon Technologies Ag | Verfahren zur Seitenwandverstärkung von Resiststrukturen und zur Herstellung von Strukturen mit reduzierter Strukturgröße |
US7226853B2 (en) | 2001-12-26 | 2007-06-05 | Applied Materials, Inc. | Method of forming a dual damascene structure utilizing a three layer hard mask structure |
US6638441B2 (en) | 2002-01-07 | 2003-10-28 | Macronix International Co., Ltd. | Method for pitch reduction |
DE10207131B4 (de) | 2002-02-20 | 2007-12-20 | Infineon Technologies Ag | Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe |
TW569211B (en) * | 2002-04-11 | 2004-01-01 | Ritek Corp | Super resolution CD mother mold, CD original mold and its manufacturing process |
US6759180B2 (en) | 2002-04-23 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography |
US20030207584A1 (en) | 2002-05-01 | 2003-11-06 | Swaminathan Sivakumar | Patterning tighter and looser pitch geometries |
US6951709B2 (en) | 2002-05-03 | 2005-10-04 | Micron Technology, Inc. | Method of fabricating a semiconductor multilevel interconnect structure |
US6602779B1 (en) | 2002-05-13 | 2003-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layer |
JP4000365B2 (ja) * | 2002-05-22 | 2007-10-31 | 独立行政法人産業技術総合研究所 | 平板型レンズを用いた結像方法及び該結像方法を利用した高密度光記録方法 |
US6734107B2 (en) | 2002-06-12 | 2004-05-11 | Macronix International Co., Ltd. | Pitch reduction in semiconductor fabrication |
KR100476924B1 (ko) | 2002-06-14 | 2005-03-17 | 삼성전자주식회사 | 반도체 장치의 미세 패턴 형성 방법 |
US6924191B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
US6835663B2 (en) | 2002-06-28 | 2004-12-28 | Infineon Technologies Ag | Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity |
US6689695B1 (en) | 2002-06-28 | 2004-02-10 | Taiwan Semiconductor Manufacturing Company | Multi-purpose composite mask for dual damascene patterning |
US20040018738A1 (en) | 2002-07-22 | 2004-01-29 | Wei Liu | Method for fabricating a notch gate structure of a field effect transistor |
US6939808B2 (en) | 2002-08-02 | 2005-09-06 | Applied Materials, Inc. | Undoped and fluorinated amorphous carbon film as pattern mask for metal etch |
WO2004031867A2 (en) | 2002-10-03 | 2004-04-15 | Massachusetts Insitute Of Technology | System and method for holographic fabrication and replication of diffractive optical elements for maskless lithography |
US6706571B1 (en) | 2002-10-22 | 2004-03-16 | Advanced Micro Devices, Inc. | Method for forming multiple structures in a semiconductor device |
US7119020B2 (en) | 2002-12-04 | 2006-10-10 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
JP4434762B2 (ja) * | 2003-01-31 | 2010-03-17 | 東京応化工業株式会社 | レジスト組成物 |
JP2004297032A (ja) | 2003-02-03 | 2004-10-21 | Toshiba Corp | 露光方法及びこれを用いた半導体装置製造方法 |
US7151598B2 (en) | 2003-04-04 | 2006-12-19 | Vladimir Poponin | Method and apparatus for enhanced nano-spectroscopic scanning |
US7430355B2 (en) * | 2003-12-08 | 2008-09-30 | University Of Cincinnati | Light emissive signage devices based on lightwave coupling |
JP4843503B2 (ja) | 2004-01-20 | 2011-12-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
KR100574490B1 (ko) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
US7335456B2 (en) * | 2004-05-27 | 2008-02-26 | International Business Machines Corporation | Top coat material and use thereof in lithography processes |
WO2005119371A1 (en) * | 2004-06-01 | 2005-12-15 | E.I. Dupont De Nemours And Company | Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications |
US7151040B2 (en) | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Methods for increasing photo alignment margins |
US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US7655387B2 (en) | 2004-09-02 | 2010-02-02 | Micron Technology, Inc. | Method to align mask patterns |
US20070048628A1 (en) * | 2005-09-01 | 2007-03-01 | Mackey Jeffrey L | Plasmonic array for maskless lithography |
US20070069429A1 (en) * | 2005-09-29 | 2007-03-29 | Albrecht Thomas R | System and method for patterning a master disk for nanoimprinting patterned magnetic recording disks |
US7803516B2 (en) * | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
US7538858B2 (en) * | 2006-01-11 | 2009-05-26 | Micron Technology, Inc. | Photolithographic systems and methods for producing sub-diffraction-limited features |
US20110130508A1 (en) * | 2009-07-29 | 2011-06-02 | Alan David Pendley | Topside optical adhesive for micro-optical film embedded into paper during the papermaking process |
-
2006
- 2006-01-11 US US11/329,755 patent/US7538858B2/en active Active
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- 2007-01-08 KR KR1020087019590A patent/KR20090006059A/ko active IP Right Grant
- 2007-01-08 EP EP07717771.5A patent/EP1971899B1/en active Active
- 2007-01-08 JP JP2008550346A patent/JP5029920B2/ja not_active Expired - Fee Related
- 2007-01-08 WO PCT/US2007/000299 patent/WO2007081813A2/en active Application Filing
- 2007-01-08 CN CN2007800023942A patent/CN101371193B/zh not_active Expired - Fee Related
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JP5029920B2 (ja) | 2012-09-19 |
EP1971899B1 (en) | 2014-12-10 |
EP1971899A2 (en) | 2008-09-24 |
US7538858B2 (en) | 2009-05-26 |
WO2007081813A2 (en) | 2007-07-19 |
US20070159617A1 (en) | 2007-07-12 |
TWI351585B (en) | 2011-11-01 |
CN101371193B (zh) | 2013-01-16 |
WO2007081813A3 (en) | 2007-09-20 |
CN101371193A (zh) | 2009-02-18 |
US20090203216A1 (en) | 2009-08-13 |
KR20090006059A (ko) | 2009-01-14 |
JP2009523322A (ja) | 2009-06-18 |
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