TW200739954A - Oxide semiconductor light-emitting element - Google Patents
Oxide semiconductor light-emitting elementInfo
- Publication number
- TW200739954A TW200739954A TW095147689A TW95147689A TW200739954A TW 200739954 A TW200739954 A TW 200739954A TW 095147689 A TW095147689 A TW 095147689A TW 95147689 A TW95147689 A TW 95147689A TW 200739954 A TW200739954 A TW 200739954A
- Authority
- TW
- Taiwan
- Prior art keywords
- type layer
- emitting element
- light emitting
- compound semiconductor
- semiconductor light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- -1 ZnO compound Chemical class 0.000 abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005366960A JP2007173404A (ja) | 2005-12-20 | 2005-12-20 | 酸化物半導体発光素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200739954A true TW200739954A (en) | 2007-10-16 |
Family
ID=38188588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095147689A TW200739954A (en) | 2005-12-20 | 2006-12-19 | Oxide semiconductor light-emitting element |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100264411A1 (zh) |
| EP (1) | EP1965443A1 (zh) |
| JP (1) | JP2007173404A (zh) |
| KR (1) | KR20080077212A (zh) |
| CN (1) | CN101341603A (zh) |
| TW (1) | TW200739954A (zh) |
| WO (1) | WO2007072810A1 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021540A (ja) * | 2007-06-13 | 2009-01-29 | Rohm Co Ltd | ＺｎＯ系薄膜及びＺｎＯ系半導体素子 |
| US8441018B2 (en) * | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
| JP5537890B2 (ja) * | 2009-10-06 | 2014-07-02 | スタンレー電気株式会社 | 酸化亜鉛系半導体発光素子の製造方法 |
| CN102194943B (zh) * | 2010-03-16 | 2013-09-25 | 吉林大学 | p型ZnO和n型GaN组合的ZnO基发光器件及其制备方法 |
| CN104269424B (zh) * | 2011-11-23 | 2017-01-18 | 俞国宏 | 一种集成电阻的发光二极管芯片 |
| JP2014116412A (ja) * | 2012-12-07 | 2014-06-26 | Stanley Electric Co Ltd | 半導体発光素子 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3917223B2 (ja) | 1996-12-06 | 2007-05-23 | ローム株式会社 | 半導体発光素子の製法 |
| JP4404995B2 (ja) * | 1999-07-26 | 2010-01-27 | 独立行政法人産業技術総合研究所 | Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法 |
| JP4402214B2 (ja) * | 1999-08-25 | 2010-01-20 | 昭和電工株式会社 | ＡｌＧａＩｎＰ発光ダイオード |
| JP4431925B2 (ja) * | 2000-11-30 | 2010-03-17 | 信越半導体株式会社 | 発光素子の製造方法 |
| JP4016245B2 (ja) * | 2001-10-03 | 2007-12-05 | 信越半導体株式会社 | 発光素子及びその製造方法 |
| JP2004296796A (ja) * | 2003-03-27 | 2004-10-21 | Shin Etsu Handotai Co Ltd | 発光素子および発光素子の製造方法 |
-
2005
- 2005-12-20 JP JP2005366960A patent/JP2007173404A/ja active Pending
-
2006
- 2006-12-19 US US12/086,882 patent/US20100264411A1/en not_active Abandoned
- 2006-12-19 KR KR1020087014833A patent/KR20080077212A/ko not_active Application Discontinuation
- 2006-12-19 TW TW095147689A patent/TW200739954A/zh unknown
- 2006-12-19 WO PCT/JP2006/325249 patent/WO2007072810A1/ja active Application Filing
- 2006-12-19 EP EP06834959A patent/EP1965443A1/en not_active Withdrawn
- 2006-12-19 CN CNA2006800482281A patent/CN101341603A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20100264411A1 (en) | 2010-10-21 |
| JP2007173404A (ja) | 2007-07-05 |
| WO2007072810A1 (ja) | 2007-06-28 |
| KR20080077212A (ko) | 2008-08-21 |
| CN101341603A (zh) | 2009-01-07 |
| EP1965443A1 (en) | 2008-09-03 |
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