TW200739876A - Electrostatic discharge protection device - Google Patents
Electrostatic discharge protection deviceInfo
- Publication number
- TW200739876A TW200739876A TW095136794A TW95136794A TW200739876A TW 200739876 A TW200739876 A TW 200739876A TW 095136794 A TW095136794 A TW 095136794A TW 95136794 A TW95136794 A TW 95136794A TW 200739876 A TW200739876 A TW 200739876A
- Authority
- TW
- Taiwan
- Prior art keywords
- protection device
- region
- well
- electrostatic discharge
- esd
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05109282 | 2005-10-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200739876A true TW200739876A (en) | 2007-10-16 |
Family
ID=37834226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095136794A TW200739876A (en) | 2005-10-06 | 2006-10-03 | Electrostatic discharge protection device |
Country Status (6)
Country | Link |
---|---|
US (1) | US7986011B2 (zh) |
EP (1) | EP1943676A2 (zh) |
JP (1) | JP2009512184A (zh) |
CN (1) | CN101283452B (zh) |
TW (1) | TW200739876A (zh) |
WO (1) | WO2007039880A2 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007294613A (ja) * | 2006-04-24 | 2007-11-08 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP5108250B2 (ja) * | 2006-04-24 | 2012-12-26 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP2007317869A (ja) * | 2006-05-25 | 2007-12-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
DE102007013443A1 (de) | 2007-03-21 | 2008-09-25 | Nicolai, Karlheinz, Dipl.-Ing. (TU) | Zugmittelgetriebe mit nierenformiger Form der Zugmittel |
US8693148B2 (en) | 2009-01-08 | 2014-04-08 | Micron Technology, Inc. | Over-limit electrical condition protection circuits for integrated circuits |
CN102104048B (zh) * | 2009-12-17 | 2012-05-30 | 中国科学院上海微系统与信息技术研究所 | 用于绝缘体上硅技术的mos型esd保护结构及其制作方法 |
CN102237341B (zh) * | 2010-04-29 | 2013-06-05 | 普诚科技股份有限公司 | 静电放电保护元件及其制作方法 |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
CN101866922B (zh) * | 2010-05-12 | 2015-01-07 | 上海华虹宏力半导体制造有限公司 | 一种用于esd保护电路的ggnmos器件 |
TWI416706B (zh) * | 2010-12-20 | 2013-11-21 | Univ Nat Chiao Tung | 三維積體電路的靜電放電防護結構 |
US20120161235A1 (en) * | 2010-12-22 | 2012-06-28 | Richtek Technology Corporation, R.O.C. | Electrostatic discharge protection device and manufacturing method thereof |
CN102569355A (zh) * | 2010-12-28 | 2012-07-11 | 立锜科技股份有限公司 | 静电防护元件及其制造方法 |
US8611058B2 (en) * | 2011-08-23 | 2013-12-17 | Micron Technology, Inc. | Combination ESD protection circuits and methods |
US8724268B2 (en) | 2011-08-30 | 2014-05-13 | Micron Technology, Inc. | Over-limit electrical condition protection circuits and methods |
EP2637211B1 (en) * | 2012-03-09 | 2018-01-03 | ams AG | ESD protection semiconductor device |
US9553011B2 (en) | 2012-12-28 | 2017-01-24 | Texas Instruments Incorporated | Deep trench isolation with tank contact grounding |
CN106158832A (zh) * | 2015-04-01 | 2016-11-23 | 联华电子股份有限公司 | 半导体结构 |
US9871032B2 (en) * | 2015-09-09 | 2018-01-16 | Globalfoundries Singapore Pte. Ltd. | Gate-grounded metal oxide semiconductor device |
US10347621B2 (en) * | 2016-10-12 | 2019-07-09 | Texas Instruments Incorporated | Electrostatic discharge guard ring with snapback protection |
CN114121931A (zh) | 2020-08-26 | 2022-03-01 | 长鑫存储技术有限公司 | 静电保护器件及静电保护电路 |
CN113192949B (zh) * | 2021-04-27 | 2024-01-23 | 上海华虹宏力半导体制造有限公司 | 半导体器件 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021852A (en) * | 1989-05-18 | 1991-06-04 | Texas Instruments Incorporated | Semiconductor integrated circuit device |
US5281841A (en) * | 1990-04-06 | 1994-01-25 | U.S. Philips Corporation | ESD protection element for CMOS integrated circuit |
US5814869A (en) * | 1992-01-28 | 1998-09-29 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors |
US5571738A (en) * | 1992-09-21 | 1996-11-05 | Advanced Micro Devices, Inc. | Method of making poly LDD self-aligned channel transistors |
US5504362A (en) * | 1992-12-22 | 1996-04-02 | International Business Machines Corporation | Electrostatic discharge protection device |
US5663082A (en) * | 1996-05-28 | 1997-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostactic discharge protection structure for lightly doped CMOS integrated circuit process |
JPH1050988A (ja) * | 1996-07-31 | 1998-02-20 | Sharp Corp | 絶縁ゲート型電界効果トランジスタ及びその製造方法 |
US6171891B1 (en) * | 1998-02-27 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | Method of manufacture of CMOS device using additional implant regions to enhance ESD performance |
US5891792A (en) * | 1998-08-14 | 1999-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD device protection structure and process with high tilt angle GE implant |
JP3237626B2 (ja) * | 1998-10-02 | 2001-12-10 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2001284540A (ja) * | 2000-04-03 | 2001-10-12 | Nec Corp | 半導体装置およびその製造方法 |
US6528850B1 (en) * | 2000-05-03 | 2003-03-04 | Linear Technology Corporation | High voltage MOS transistor with up-retro well |
US6265251B1 (en) * | 2000-05-08 | 2001-07-24 | Chartered Semiconductor Manufacturing Ltd. | Method to fabricate a thick oxide MOS transistor for electrostatic discharge protection in an STI process |
US6627955B2 (en) * | 2001-01-23 | 2003-09-30 | Texas Instruments Incorporated | Structure and method of MOS transistor having increased substrate resistance |
JP3888912B2 (ja) * | 2002-03-04 | 2007-03-07 | ローム株式会社 | 半導体集積回路装置 |
CN1302547C (zh) * | 2002-04-29 | 2007-02-28 | 联华电子股份有限公司 | 静电放电保护电路与其制造方法及半导体元件的制造方法 |
US6867103B1 (en) | 2002-05-24 | 2005-03-15 | Taiwan Semiconductor Manufacturing Company | Method of fabricating an ESD device on SOI |
US6882009B2 (en) * | 2002-08-29 | 2005-04-19 | Industrial Technology Research Institute | Electrostatic discharge protection device and method of manufacturing the same |
CN1591799A (zh) | 2003-08-27 | 2005-03-09 | 上海宏力半导体制造有限公司 | 静电放电保护装置的晶体管制造方法 |
KR100645039B1 (ko) * | 2003-12-15 | 2006-11-10 | 삼성전자주식회사 | 정전기 방전 보호 소자 및 그 제조방법 |
-
2006
- 2006-10-03 TW TW095136794A patent/TW200739876A/zh unknown
- 2006-10-05 EP EP06809505A patent/EP1943676A2/en not_active Withdrawn
- 2006-10-05 CN CN2006800370303A patent/CN101283452B/zh not_active Expired - Fee Related
- 2006-10-05 WO PCT/IB2006/053640 patent/WO2007039880A2/en active Application Filing
- 2006-10-05 JP JP2008534139A patent/JP2009512184A/ja not_active Withdrawn
- 2006-10-05 US US12/088,731 patent/US7986011B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101283452A (zh) | 2008-10-08 |
JP2009512184A (ja) | 2009-03-19 |
EP1943676A2 (en) | 2008-07-16 |
US7986011B2 (en) | 2011-07-26 |
WO2007039880A3 (en) | 2007-07-05 |
CN101283452B (zh) | 2010-05-19 |
US20080224220A1 (en) | 2008-09-18 |
WO2007039880A2 (en) | 2007-04-12 |
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