TW200739695A - Low resistance gate for power MOSFET applications and method of manufacture - Google Patents
Low resistance gate for power MOSFET applications and method of manufactureInfo
- Publication number
- TW200739695A TW200739695A TW096104816A TW96104816A TW200739695A TW 200739695 A TW200739695 A TW 200739695A TW 096104816 A TW096104816 A TW 096104816A TW 96104816 A TW96104816 A TW 96104816A TW 200739695 A TW200739695 A TW 200739695A
- Authority
- TW
- Taiwan
- Prior art keywords
- low resistance
- trench
- manufacture
- power mosfet
- resistance gate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
- H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77231506P | 2006-02-10 | 2006-02-10 | |
US11/467,997 US7807536B2 (en) | 2006-02-10 | 2006-08-29 | Low resistance gate for power MOSFET applications and method of manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739695A true TW200739695A (en) | 2007-10-16 |
TWI441243B TWI441243B (zh) | 2014-06-11 |
Family
ID=38369145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096104816A TWI441243B (zh) | 2006-02-10 | 2007-02-09 | 用於功率金屬氧化物半導體場效電晶體(mosfet)設備之低電阻閘極及製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7807536B2 (zh) |
JP (1) | JP2009526410A (zh) |
KR (1) | KR101398749B1 (zh) |
CN (1) | CN101379610B (zh) |
AT (1) | AT505375A2 (zh) |
DE (1) | DE112007000339T5 (zh) |
TW (1) | TWI441243B (zh) |
WO (1) | WO2007095438A2 (zh) |
Cited By (5)
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TWI587377B (zh) * | 2016-07-27 | 2017-06-11 | 世界先進積體電路股份有限公司 | 半導體裝置結構的形成方法 |
US9786754B1 (en) | 2017-02-06 | 2017-10-10 | Vanguard International Semiconductor Corporation | Method for forming semiconductor device structure |
TWI629795B (zh) * | 2017-09-29 | 2018-07-11 | 帥群微電子股份有限公司 | 溝槽式功率半導體元件及其製造方法 |
TWI683439B (zh) * | 2014-02-04 | 2020-01-21 | 萬國半導體股份有限公司 | 半導體基板中的半導體元件及其製備方法 |
TWI765292B (zh) * | 2019-07-31 | 2022-05-21 | 台灣積體電路製造股份有限公司 | 半導體裝置及其形成方法 |
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US7635637B2 (en) * | 2005-07-25 | 2009-12-22 | Fairchild Semiconductor Corporation | Semiconductor structures formed on substrates and methods of manufacturing the same |
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US7807536B2 (en) * | 2006-02-10 | 2010-10-05 | Fairchild Semiconductor Corporation | Low resistance gate for power MOSFET applications and method of manufacture |
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US7982284B2 (en) * | 2006-06-28 | 2011-07-19 | Infineon Technologies Ag | Semiconductor component including an isolation structure and a contact to the substrate |
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US7368353B2 (en) * | 2003-11-04 | 2008-05-06 | International Rectifier Corporation | Trench power MOSFET with reduced gate resistance |
US7405452B2 (en) * | 2004-02-02 | 2008-07-29 | Hamza Yilmaz | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
JP2006202931A (ja) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
AT504289A2 (de) * | 2005-05-26 | 2008-04-15 | Fairchild Semiconductor | Trench-gate-feldeffekttransistoren und verfahren zum bilden derselben |
US7544575B2 (en) * | 2006-01-19 | 2009-06-09 | Freescale Semiconductor, Inc. | Dual metal silicide scheme using a dual spacer process |
US7807536B2 (en) * | 2006-02-10 | 2010-10-05 | Fairchild Semiconductor Corporation | Low resistance gate for power MOSFET applications and method of manufacture |
US7897462B2 (en) * | 2008-11-14 | 2011-03-01 | Semiconductor Components Industries, L.L.C. | Method of manufacturing semiconductor component with gate and shield electrodes in trenches |
US20100123193A1 (en) * | 2008-11-14 | 2010-05-20 | Burke Peter A | Semiconductor component and method of manufacture |
US8362548B2 (en) * | 2008-11-14 | 2013-01-29 | Semiconductor Components Industries, Llc | Contact structure for semiconductor device having trench shield electrode and method |
US8779510B2 (en) * | 2010-06-01 | 2014-07-15 | Alpha And Omega Semiconductor Incorporated | Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts |
-
2006
- 2006-08-29 US US11/467,997 patent/US7807536B2/en active Active
-
2007
- 2007-02-06 AT AT0907007A patent/AT505375A2/de not_active Application Discontinuation
- 2007-02-06 WO PCT/US2007/061717 patent/WO2007095438A2/en active Application Filing
- 2007-02-06 KR KR1020087020939A patent/KR101398749B1/ko active IP Right Grant
- 2007-02-06 JP JP2008554480A patent/JP2009526410A/ja not_active Withdrawn
- 2007-02-06 DE DE112007000339T patent/DE112007000339T5/de not_active Withdrawn
- 2007-02-06 CN CN200780004787.7A patent/CN101379610B/zh not_active Expired - Fee Related
- 2007-02-09 TW TW096104816A patent/TWI441243B/zh active
-
2010
- 2010-09-27 US US12/891,147 patent/US8592277B2/en active Active
Cited By (7)
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TWI683439B (zh) * | 2014-02-04 | 2020-01-21 | 萬國半導體股份有限公司 | 半導體基板中的半導體元件及其製備方法 |
TWI587377B (zh) * | 2016-07-27 | 2017-06-11 | 世界先進積體電路股份有限公司 | 半導體裝置結構的形成方法 |
US9786754B1 (en) | 2017-02-06 | 2017-10-10 | Vanguard International Semiconductor Corporation | Method for forming semiconductor device structure |
TWI629795B (zh) * | 2017-09-29 | 2018-07-11 | 帥群微電子股份有限公司 | 溝槽式功率半導體元件及其製造方法 |
US10529847B2 (en) | 2017-09-29 | 2020-01-07 | Super Group Semiconductor Co., Ltd. | Trench power semiconductor component and method of manufacturing the same |
TWI765292B (zh) * | 2019-07-31 | 2022-05-21 | 台灣積體電路製造股份有限公司 | 半導體裝置及其形成方法 |
US11532550B2 (en) | 2019-07-31 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure having a multi-layer conductive feature and method making the same |
Also Published As
Publication number | Publication date |
---|---|
KR101398749B1 (ko) | 2014-05-26 |
WO2007095438A2 (en) | 2007-08-23 |
CN101379610B (zh) | 2013-03-06 |
US7807536B2 (en) | 2010-10-05 |
KR20080100209A (ko) | 2008-11-14 |
WO2007095438A3 (en) | 2008-02-14 |
DE112007000339T5 (de) | 2008-12-11 |
JP2009526410A (ja) | 2009-07-16 |
AT505375A2 (de) | 2008-12-15 |
TWI441243B (zh) | 2014-06-11 |
US20110014763A1 (en) | 2011-01-20 |
US8592277B2 (en) | 2013-11-26 |
US20070190728A1 (en) | 2007-08-16 |
CN101379610A (zh) | 2009-03-04 |
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