TW200739261A - Radiation sensitive composition - Google Patents

Radiation sensitive composition

Info

Publication number
TW200739261A
TW200739261A TW096104588A TW96104588A TW200739261A TW 200739261 A TW200739261 A TW 200739261A TW 096104588 A TW096104588 A TW 096104588A TW 96104588 A TW96104588 A TW 96104588A TW 200739261 A TW200739261 A TW 200739261A
Authority
TW
Taiwan
Prior art keywords
ray
carbon atoms
acid
integer
alkyl
Prior art date
Application number
TW096104588A
Other languages
English (en)
Inventor
Masatoshi Echigo
Dai Oguro
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of TW200739261A publication Critical patent/TW200739261A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096104588A 2006-02-08 2007-02-08 Radiation sensitive composition TW200739261A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006031700A JP2009098155A (ja) 2006-02-08 2006-02-08 感放射線性組成物

Publications (1)

Publication Number Publication Date
TW200739261A true TW200739261A (en) 2007-10-16

Family

ID=38345215

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096104588A TW200739261A (en) 2006-02-08 2007-02-08 Radiation sensitive composition

Country Status (3)

Country Link
JP (1) JP2009098155A (zh)
TW (1) TW200739261A (zh)
WO (1) WO2007091621A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495632B (zh) * 2004-12-24 2015-08-11 Mitsubishi Gas Chemical Co 光阻用化合物
US8592134B2 (en) * 2007-12-07 2013-11-26 Mitsubishi Gas Chemical Company, Inc. Composition for forming base film for lithography and method for forming multilayer resist pattern
JP5571334B2 (ja) * 2009-08-07 2014-08-13 住友化学株式会社 レジスト組成物
DE102009029050A1 (de) * 2009-08-31 2011-03-03 Evonik Oxeno Gmbh Organophosphorverbindungen basierend auf Tetraphenol(TP)-substituierten Strukturen
JP5846622B2 (ja) * 2010-12-16 2016-01-20 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
US9809601B2 (en) 2013-02-08 2017-11-07 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
CN104995559B (zh) * 2013-02-08 2020-04-07 三菱瓦斯化学株式会社 抗蚀剂组合物、抗蚀图案形成方法和用于其的多元酚衍生物
JP6390911B2 (ja) 2013-02-08 2018-09-19 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
KR20170099908A (ko) 2014-12-25 2017-09-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성 재료, 리소그래피용 하층막, 패턴 형성방법 및 정제방법
KR20170131636A (ko) * 2015-03-30 2017-11-29 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 감방사선성 조성물, 아몰퍼스막 및 레지스트패턴 형성방법
CN107533290B (zh) 2015-03-30 2021-04-09 三菱瓦斯化学株式会社 抗蚀基材、抗蚀剂组合物及抗蚀图案形成方法
CN107428646B (zh) 2015-03-30 2021-03-02 三菱瓦斯化学株式会社 化合物、树脂、和它们的纯化方法、及其应用
JP6778989B2 (ja) * 2015-03-31 2020-11-04 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
CN107428717B (zh) 2015-03-31 2021-04-23 三菱瓦斯化学株式会社 抗蚀剂组合物、抗蚀图案形成方法、及用于其的多酚化合物
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
JP7020912B2 (ja) 2015-08-31 2022-02-16 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、並びにレジストパターン形成方法
WO2017038645A1 (ja) 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、パターン形成方法、樹脂、並びに精製方法
US11243467B2 (en) 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
CN111630111A (zh) * 2018-01-31 2020-09-04 三菱瓦斯化学株式会社 组合物、以及抗蚀剂图案的形成方法和绝缘膜的形成方法
JP7017608B2 (ja) * 2020-07-15 2022-02-08 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4614056B2 (ja) * 2003-09-18 2011-01-19 三菱瓦斯化学株式会社 レジスト用化合物および感放射線性組成物
JP2005275283A (ja) * 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd 電子線、ｅｕｖ光又はｘ線用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
WO2007091621A1 (ja) 2007-08-16
JP2009098155A (ja) 2009-05-07

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